TWI474416B - 微電子封裝組件及其製作方法 - Google Patents

微電子封裝組件及其製作方法 Download PDF

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Publication number
TWI474416B
TWI474416B TW100146602A TW100146602A TWI474416B TW I474416 B TWI474416 B TW I474416B TW 100146602 A TW100146602 A TW 100146602A TW 100146602 A TW100146602 A TW 100146602A TW I474416 B TWI474416 B TW I474416B
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Taiwan
Prior art keywords
pin
electrical coupling
wetting
region
contact angle
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TW100146602A
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English (en)
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TW201241943A (en
Inventor
Hunt Hang Jiang
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Monolithic Power Systems Inc
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Publication of TW201241943A publication Critical patent/TW201241943A/zh
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Description

微電子封裝組件及其製作方法
本發明係有關一種電子元件，具體上係有關一種微電子封裝組件及其製作方法。
倒裝晶片技術是一種透過焊料球或者焊料凸塊而直接將半導體晶片與基板相連接的技術。在封裝過程中，首先將焊料球安置在半導體晶片上，並在基板(例如，印刷電路板)上形成焊料掩膜以確定多個連接點，然後將附著有焊料球的半導體晶片翻轉並使焊料球對準基板上相對應的連接點，最後透過回流來完成連接。
前面所述的倒裝晶片技術存在一個缺點，即當基板是具有多個引腳的引線框架時，在回流期間，焊料球可能會不可控地塌陷。焊料球塌陷的不可控可能會導致微電子封裝組件在結構上、功能上和/或其他類型的損壞。例如，相鄰的焊料球可能會彼此相接觸，其造成半導體晶片和/或基板短路。
傳統的解決方案是與印刷電路板類似地在引線框架上製作焊料掩膜，但是在引線框架的細小引腳上製作焊料掩膜不僅操作困難、耗時，而且成本也高。
本發明的目的在於提供一種倒裝晶片的微電子封裝組件及其製作方法，從而防止電耦接元件在回流期間發生不可控的塌陷。
根據本發明之一個實施例的微電子封裝組件製作方法，包括以下步驟：步驟A：在引線框架的引腳上形成附著區和非附著區，其中，在回流期間，對於電耦接元件而言，附著區具有比非附著區更好的潤濕性；步驟B：使位於半導體晶片上的電耦接元件與引腳的附著區相接觸；以及步驟C：回流電耦接元件，使電耦接元件可控地塌陷，以便在半導體晶片與引線框架的引腳之間形成電連接。
根據本發明之一個實施例的微電子封裝組件：包括：半導體晶片，具有接觸焊墊；引線框架，具有引腳，其中，引腳包括附著區和非附著區；電耦接元件，係位於半導體晶片的接觸焊墊與引腳的附著區之間，在半導體晶片的接觸焊墊與引腳之間形成電連接；其中，在回流期間，對於電耦接元件而言，引腳的附著區具有比非附著區更好的潤濕性。
根據本發明的實施例所提供的微電子封裝組件及其製作方法，在引線框架的引腳上形成附著區和非附著區。由於在回流期間，對於電耦接元件而言，附著區具有比非附著區更好的潤濕性，不必使用焊料掩膜即可有效地控制電耦接元件在回流期間的塌陷。
下面參照附圖來描述本發明的實施例。封裝有半導體晶片的封裝體係稱為微電子封裝組件，通常微電子封裝組件在對半導體晶片電氣性能造成最小化影響的同時對內部晶片和相關的元件提供保護、供電、冷卻，並提供與外部的電氣和機械聯繫。典型的微電子封裝組件包括微電子電路或元件、薄膜記錄頭、資料儲存單元、微流體裝置和形成於微電子基板上的其他元件。微電子基板可包括半導體基片(例如，摻雜有矽或者砷化鎵的晶圓)、絕緣片(例如，陶瓷基片)、或者導電片(例如，金屬或者金屬合金)。本文所稱“半導體晶片”可包括各種場合下使用的產品，例如單個積體電路的晶片、成像晶片、感應晶片以及任何其他具有半導體特性的晶片。
本發明的實施例中，描述了很多具體的的細節。本領域技術人員將理解，沒有這些具體細節，本發明同樣可以被實施。本領域技術人員還應理解，儘管本發明中的詳細描述與特定實施例相結合，但本發明仍有許多其他的實施模式，在實際執行時可能有些變化，但仍然包含在本發明的主旨和範圍內，因此，本發明旨在包括所有落入本發明和所述申請專利範圍及主旨內的替代例、改進例和變化例等。
本發明的實施例揭示一種微電子封裝組件，該微電子封裝組件包括具有接觸焊墊的半導體晶片、具有引腳的引線框架和電耦接元件。其中，引腳包括附著區和非附著區，電耦接元件係位於半導體晶片的接觸焊墊與引腳的附著區之間，以便在半導體晶片的接觸焊墊與引腳之間形成電連接。在回流期間，對於電耦接元件而言，引腳的附著區具有比非附著區更好的潤濕性。在一個實施例中，引腳包括導電材料，附著區包括位於引腳之表面上的潤濕材料，其中，電耦接元件與引腳之附著區的潤濕材料相接觸。在另一個實施例中，引腳包括導電材料，附著區包括位於引腳之表面上的潤濕材料，非附著區包括導電材料的氧化物，其中，電耦接元件與引腳之附著區的潤濕材料相接觸。
本發明的實施例還揭示了一種微電子封裝組件的製作方法，該製作方法包括步驟A~C。在步驟A，在引線框架的引腳上形成附著區和非附著區，其中，在回流期間，對於電耦接元件而言，附著區具有比非附著區更好的潤濕性。在步驟B，使位於半導體晶片上的電耦接元件與引腳的附著區相接觸。在步驟C，回流電耦接組件，使電耦接元件可控地塌陷，以便在半導體晶片與引線框架的引腳之間形成電連接。在一個實施例中，步驟A包括在引腳的第一部分表面上沉積潤濕材料；和/或處理引腳的第二部分表面，使得在回流期間，對於電耦接元件而言，引腳的第二部分表面具有比第一部分表面更差的潤濕性。
圖1A-1F是根據本發明一實施例的半導體晶片和/或部分引線框架在微電子封裝組件製作過程中的剖視圖。如圖1A的箭頭103所示，微電子封裝組件製作方法的初始步驟包括將多個電耦接元件104附著於半導體晶片100的接觸焊墊102上。為了清楚起見，在圖1A中以虛線示出附著至接觸焊墊102之前的電耦接元件104。在圖1A所示的實施例中，示出兩個電耦接組件104。在其他實施例中，微電子封裝組件可包括1個、3個或者任何其他數目的電耦接元件104。
半導體晶片100可包括任何適當類型的積體電路。在一個實施例中，半導體晶片100包括多個金屬氧化物半導體場效應電晶體(MOSFET)、接面型場效應電晶體(JFET)、絕緣閘雙極型電晶體(IGBT)、電容器和/或其他的電子元件。在其他實施例中，半導體晶片100包括其他各種類型合適的電子和/或機械元件。
在一個實施例中，電耦接元件104包括透過點焊、局部回流和/或其他合適的技術附著於接觸焊墊102的焊料球。在其他實施例中，電耦接元件104包括透過電鍍和/或其他方式而被形成於接觸焊墊102上的焊料球。需要說明的是，此處所稱“焊料”是指熔點在90℃~450℃範圍內的一種易熔金屬合金。這種焊料可以是銅、錫、鉛、銀、鋅和/或其他適用金屬中至少幾種金屬的合金。在其他實施例中，電耦接元件104可包括任意其他合適的用於耦接的導電部件。
圖1B~1D給出了根據本發明的一個實施例在引線框架105上形成附著區112和非附著區113的步驟。如圖1B~1D所示，引線框架105具有多個引腳。在圖1B~1D所示的實施例中，為了簡化說明，僅示出並列的第一引腳106a與第二引腳106b。在其他實施例中，引線框架105還包括晶片貼裝墊、擋板、其他引腳以及其他合適的組成部分。引腳包括第一表面107a以及與第一表面相對的第二表面107b。其中，第一表面107a可以作為與半導體晶片100連接的交界面，第二表面107b可以作為與外部裝置(例如，印刷電路板)等連接的交界面。
如圖1B所示為沉積步驟：在引腳的第一表面107a上沉積掩膜材料108。在一個實施例中，掩膜材料108包括透過旋塗操作和/或其他合適的技術而被沉積於引腳上的微影抗蝕劑。在其他實施例中，微影抗蝕劑包括壓合和/或以其他方式而被膠著於引腳上的卷式乾膜光阻。此處所稱“微影抗蝕劑”是指一種暴露於電磁輻射後會產生化學變化的材料。微影抗蝕劑包括正微影抗蝕劑和負微影抗蝕劑，正微影抗蝕劑在輻照時可溶，而負微影抗蝕劑具有輻照不溶性。在其他實施例中，掩膜材料108包括硬橡膠和/或其他類型合適的硬掩膜材料。
圖1C所示為去除部分掩膜材料的步驟：去除部分掩膜材料108以形成與附著區112相對應的多個開口110。在一個實施例中，該去除部分掩膜材料的步驟包括根據所需的結構而使用微影法和/或其他合適的技術來圖案化微影抗蝕劑。在其他實施例中，掩膜材料108的開口110也可使用鐳射燒蝕、濕式蝕刻、乾式蝕刻和/或其他合適的技術來予以製作。
圖1D所示為在引腳的第一表面107a上形成附著區112和非附著區113的步驟。在圖1D所示實施例中，形成附著區112(或潤濕焊墊)包括透過掩膜材料108的開口110在引腳的第一表面107a上沉積潤濕材料111。需要說明的是，本文所稱潤濕材料111是指在回流時對電耦接元件104具有良好潤濕性的材料。潤濕材料111可包括銀(Ag)、鎳(Ni)/金(Au)合金和/或其他適用的金屬或金屬合金。潤濕性能的好壞一般使用潤濕接觸角來表示，潤濕接觸角是指焊料外緣在焊件表面交接點處的切線與焊接面的夾角。在一個實施例中，回流期間潤濕材料111與電耦接元件104之間的潤濕接觸角小於90°時，表示潤濕性能良好。在其他實施例中，潤濕接觸角可小於60°、45°、30°和/或其他合適的的角度值。
形成附著區112後，接下來的步驟包括移除剩餘的掩膜材料108(為了說明清楚，在圖1D中用虛線來表示)和多餘的潤濕材料111。然後對第一表面107a的露出部分進行處理以形成非附著區113。在一個實施例中，透過接觸氧化化學溶液、在空氣中加熱引腳、接觸氧電漿和/或其他合適的技術來氧化第一表面107a的露出部分。常見的氧化化學溶液有硫酸、硝酸、鹽酸和/或其混合物。在其他實施例中，第一表面107a的露出部分可採用其他合適的表面處理技術來處理。在一個實施例中，氧化含銅引腳之第一表面的露出部分以形成銅的氧化物(Cux O)。
經過前面的表面處理步驟後，非附著區113在回流時對電耦接元件104而言潤濕性能不良。在一個實施例中，在回流時，非附著區113與電耦接元件104之間的潤濕接觸角大於90°，表示潤濕性能不良。在其他實施例中，潤濕接觸角可能會大於120°、135°和/或其他合適的角度值。
圖1E所示為將半導體晶片100透過與引腳的附著區112對準並接觸的電耦接元件104附著於引線框架105的步驟。然後，引線框架105和與半導體晶片100在熱能和/或其他形式的能量作用下被回流(例如，在回流焊爐中，未顯示出)。這樣，電耦接元件104被至少部分地熔化，從而在其冷卻後將引線框架105和半導體晶片100連接在一起。
在本發明的實施例中，不必使用焊料掩膜，具有附著區112和非附著區113的引腳可以實現電耦接元件104在回流期間的可控塌陷，從而降低或者避免對微電子封裝組件之結構或者電氣的損壞。正如前面所討論的，對於電耦接元件104而言，附著區112的潤濕性能良好而非附著區113的潤濕性能不良。附著區112和非附著區113的潤濕性能差別至少能限制或者實質上消除回流期間電耦接組件104的遷移或擴散。由於沒有表面接觸，在回流期間電耦接元件104不易被黏合至非附著區113。因此，在回流期間，電耦接組件104被限制於附著區112上。
在一個實施例中，根據回流期間電耦接元件104的所欲遷移度來調整附著區112和非附著區113潤濕接觸角的差值。潤濕接觸角差值越大，遷移度越小，反之亦然。因此，如果所需的遷移度小，可使用較大的潤濕接觸角差值，例如接觸角差值大於20°、30°或者40°。如果大的遷移度是可接受的，可使用較小的潤濕接觸角差值，例如潤濕接觸角差值小於15°、10°或者5°。
在回流步驟之後，微電子封裝組件的製作過程還可包括各種額外的步驟。例如，如圖1F所示，在半導體晶片100與引腳之間沉積底部填充材料117。底部填充材料117至少部分地包覆電耦接元件104。在其他實施例中，底部填充材料117可以被省略。
半導體晶片100和引線框架105被塑型材料120所包覆，塑型材料120可以是環氧樹脂，也可以是其他熱固性聚合物。在一個實施例中，塑型材料120基本上完全地包覆半導體晶片100。塑型材料120至少部分地包覆引腳，引腳的第二表面170b被露出以實現與外部裝置的連接。在其他實施例中，引線框架105還包括暴露於塑型材料120外部的引腳。在進一步的實施例中，半導體晶片100和引線框架105可採用其他結構來予以包覆。
儘管在前面的步驟中透過沉積潤濕材料111和對引腳進行表面處理來形成附著區112和非附著區113，在其他實施例中，形成附著區112和非附著區113可能還包括其他的步驟。
圖2A-2E是根據本發明之另一實施例的部分引線框架在微電子封裝組件製作過程中的剖視圖。如圖2A所示，第一步，在引腳的第一表面107a上沉積掩膜材料108。如圖2B和2C所示，第二步，移除部分的掩膜材料108，即圖案化掩膜材料108以確保引腳之第一表面107a的掩蓋部分109a和露出部分109b。其中，掩蓋部分109a對應於附著區112，露出部分109b對應於非附著區113。在圖2C所示實施例中，掩蓋部分109a呈圓形。在其他實施例中，掩蓋部分109a可以是矩形、橢圓形、梯形和/或其他適用的類型。
然後，露出部分109b被處理以獲取所需的潤濕特性，而掩蓋部分109a被剩餘的掩膜材料108所保護而不被處理。在一個實施例中，可採用與如圖1D所示類似的步驟對引腳的露出部分109b進行處理。在其他實施例中，可使用其他適用的技術對露出部分109b進行處理，以使得在回流期間露出部分109對電耦接元件104的潤濕性能不良。
與圖1A~圖1F所示步驟類似，可根據附著區112和非附著區113所需的潤濕角度差對引腳的露出部分109b進行處理。例如，在一個實施例中，引線框架105可包括銅引腳。此時，回流期間電耦接元件104與銅引腳之間的潤濕接觸角是確定的。這樣，根據電耦接元件104與銅引腳之間的潤濕接觸角以及所需的潤濕角度差值，可以推導出在回流期間電耦接元件104與非附著區113之間所需的潤濕接觸角。根據非附著區113所需的潤濕接觸角，可選擇適合的技術和/或操作參數，例如氧離子處理、熱處理，以得到非附著區113所需的潤濕接觸角。
如圖2D和2E所示，該微電子封裝組件製作過程的下一步驟包括移除剩餘的掩膜材料108以露出附著區112。最後，引線框架105可以經過其他合適的步驟(例如，前面圖1E和圖1F所詳細描述的步驟)以形成微電子封裝組件。
圖3A-3C是根據本發明又一實施例的部分引線框架在微電子封裝組件製作過程中的剖視圖。在該實施例中，採用範本印刷來形成附著區112和非附著區113。如圖3A所示，第一步驟，在靠近引腳的第一表面107a處放置範本132。範本132具有與附著區112相對應的開口134。第二步驟，如圖3B所示，採用噴塗、印刷和/或其他方式透過範本132的開口134(如同圖3A中的箭頭111所示)，以將潤濕材料111形成於引腳的第一表面107a上。
接下來，如圖3C所示，從引腳的第一表面107a移除範本132。第一表面107a的露出部分可能會經過如前面圖1D中的描述的表面處理步驟。最後，引線框架105可以經過其他合適的步驟(例如，前面圖1E和圖1F所詳細描述的步驟)以形成微電子封裝組件。
圖4A和4B是根據本發明之再一實施例的部分引線框架在微電子封裝組件製作過程中的剖視圖。在該實施例中，利用預成型構件150來形成附著區112和非附著區113。如圖4A所示，該製作過程包括將預成型構件150附著至引腳的第一表面107a。在圖4A和4B所示的實施例中，預成型構件150包括具有介面層152和黏著層156的疊層結構。介面層152包括在回流期間對電耦接組件104潤濕性良好的第一部分154和潤濕性不良的第二部分158。在一個實施例中，第一部分154包括銀，第二部分包括銅的氧化物(Cux O)。第一部分154與第二部分158分別和附著區112與非附著區113相對應。
如圖4B所示，附著有預成型構件150的引線框架105在被附著至半導體晶片100之前，可能被選擇性地加工處理和/或經過其他合適的製程步驟。儘管在圖4A和4B所示的實施例中，預成型構件150具有預先附著的黏著層156。在其他實施例中，預成型構件150包括放置於一個可選底板上的介面層152(未顯示出)，無需黏著層156，而替代性地在將預成型構件150附著至引線框架105之前，在預成型構件150和/或引線框架105上使用黏著劑。
根據本發明的實施例，針對晶片上引線封裝做了幾個實驗。圖5A和5B是在實驗中截取出的晶片上引線封裝的剖視圖。在第一個實驗中，使附著有焊料凸塊204的半導體晶片200與具有銅引腳206的引線框架205彼此接觸。其中，銅引腳206的表面潤濕性基本上一致。然後，對半導體晶片200和引線框架205進行回流。從圖5A可以清楚地看出，焊料凸塊206在回流期間不可控地塌陷並彼此接觸。
在第二個實驗中，使附著有焊料凸塊304的半導體晶片300與具有引腳306的引線框架305彼此接觸，該引腳306已按照圖1A~1E所示的製作過程被處理過。引腳306包括位於其上表面上之含有銀的潤濕焊墊312。然後，對半導體晶片300和引線框架305進行回流。從圖5B可以清楚地看出，焊料凸塊304基本上保持它的形狀，並沒有遷移出潤濕焊墊312。
上述本發明的說明書和實施僅僅以示例性的方式而對本發明進行說明，這些實施例不是完全詳盡的，並且不被使用來限定本發明的範圍。對於揭示的實施例進行變化和修改都是可能的，其他可行的選擇性實施例和對實施例中元件的等同變化可以被本技術領域的普通技術人員所瞭解。本發明所揭示的實施例的其他變化和修改並不超出本發明的精神和保護範圍。
100．．．半導體晶片
102．．．接觸焊墊
104．．．電耦接元件
105．．．引線框架
106a．．．第一引腳
106b．．．第二引腳
107a．．．第一表面
107b．．．第二表面
108．．．掩膜材料
110．．．開口
111．．．潤濕材料
112．．．附著區
113．．．非附著區
117．．．底部填充材料
109a．．．掩蓋部分
109b．．．露出部分
132．．．範本
134．．．開口
150．．．預成型構件
152．．．介面層
154．．．第一部分
156．．．黏著層
158．．．第二部分
200．．．半導體晶片
204．．．焊料凸塊
205．．．引線框架
206．．．銅引腳
300．．．半導體晶片
304．．．焊料凸塊
305．．．引線框架
306．．．引腳
312．．．潤濕焊墊
為了更好的理解本發明，將根據以下附圖而對本發明進行詳細的描述：
圖1A-1F是根據本發明一個實施例的半導體晶片和/或部分引線框架在微電子封組件裝製作過程中的剖視圖；
圖2A-2E是根據本發明另一實施例的部分引線框架在微電子封裝組件製作過程中的剖視圖；
圖3A-3C是根據本發明又一實施例的部分引線框架在微電子封裝組件製作過程中的剖視圖；
圖4A和4B是根據本發明再一實施例的部分引線框架在微電子封裝組件製作過程中的剖視圖；
圖5A和5B是根據本發明幾個實施例的晶片上引線封裝的剖視圖。
100．．．半導體晶片
104．．．電耦接元件
105．．．引線框架
106a．．．第一引腳
106b．．．第二引腳
107a．．．第一表面
107b．．．第二表面
112．．．附著區
117．．．底部填充材料
120．．．塑型材料

Claims (17)

  1. 一種微電子封裝組件的製作方法，包括以下步驟：步驟A：在引線框架的引腳上形成附著區和非附著區，其中，在回流期間，對於電耦接元件而言，該附著區具有比該非附著區更好的潤濕性；步驟B：使位於半導體晶片上的該電耦接元件與該引腳的該附著區相接觸；以及步驟C：回流該電耦接元件，使該電耦接元件可控地塌陷，以便在該半導體晶片與該引線框架的該等引腳之間形成電連接；其中，該步驟A包括：在含銅引腳的表面上沉積微影抗蝕劑；圖案化該微影抗蝕劑以形成與該附著區相對應的開口，其中，該引腳的第一部分表面從該微影抗蝕劑的該開口露出，該引腳的第二部分表面被該微影抗蝕劑所覆蓋；透過該微影抗蝕劑的該開口而在該引腳的該第一部分表面上沉積銀；移除沉積於該引腳之該第二部分表面的該微影抗蝕劑；以及氧化該引腳的該第二部分表面以形成銅的氧化物。
  2. 如申請專利範圍第1項所述的製作方法，其中，該步驟A包括：在該引腳的表面上沉積掩膜材料； 圖案化該掩膜材料以形成與該附著區相對應的開口，其中，該引腳的第一部分表面從該掩膜材料的開口露出，該引腳的第二部分表面被該掩膜材料所覆蓋；透過該掩膜材料的該開口而在該引腳的該第一部分表面上沉積潤濕材料；移除沉積於該引腳之該第二部分表面上的該掩膜材料；以及處理該引腳的該第二部分表面，使得在該回流期間，對於該電耦接元件而言，該引腳的該第二部分表面具有比該第一部分表面更差的潤濕性。
  3. 如申請專利範圍第1項所述的製作方法，其中，該步驟A包括：在該引腳的表面上沉積掩膜材料；移除部分的該掩膜材料，以露出該引腳的第二部分表面，該掩膜材料的剩餘部分覆蓋該引腳的第一部分表面；處理該引腳的該第二部分表面，使得在該回流期間，對於該電耦接元件而言，該引腳的該第二部分表面具有比該第一部分表面更差的潤濕性；以及移除該引腳之表面上剩餘的該掩膜材料。
  4. 如申請專利範圍第3項所述的製作方法，其中，處理該引腳的該第二部分表面的該步驟包括對該引腳的該第二部分表面進行氧化。
  5. 如申請專利範圍第1項所述的製作方法，其中，該步驟A包括： 在靠近該引腳的表面處設置範本，其中，該範本具有與該附著區相對應的開口；以及透過該範本的該開口而在該引腳的該表面上印刷潤濕材料。
  6. 如申請專利範圍第1項所述的製作方法，其中，該步驟A包括：在該引腳的上表面附著一預成型構件，該預成型構件具有對應於該附著區的第一部分和對應於該非附著區的第二部分。
  7. 如申請專利範圍第1項所述的製作方法，進一步包括：在該電耦接元件接觸該引腳的該附著區之前，將該電耦接元件附著於該半導體晶片的接觸焊墊上；以及用塑型材料至少部分地包覆該半導體晶片、該電耦接元件和該引腳。
  8. 如申請專利範圍第1項所述的方法，其中，在該回流期間，對於該電耦接元件而言，該附著區具有第一潤濕接觸角，該非附著區具有第二潤濕接觸角，其中，該第一潤濕接觸角小於該第二潤濕接觸角。
  9. 如申請專利範圍第8項所述的方法，其中，該第二潤濕接觸角和該第一潤濕接觸角的差值係由該回流期間該電耦接組件從該附著區往外的所欲遷移度所決定。
  10. 如申請專利範圍第8項所述的方法，其中，該步驟A包括： 在該引腳的第一部分表面上沉積潤濕材料；和/或處理該引腳的第二部分表面，使得在該回流期間，對於該電耦接元件而言，該引腳的該第二部分表面具有比該第一部分表面更差的潤濕性。
  11. 如申請專利範圍第8項所述的方法，其中，該電耦接元件包括焊料球。
  12. 一種微電子封裝組件，包括：半導體晶片，具有接觸焊墊；引線框架，具有引腳，其中，該引腳包括附著區和非附著區；以及電耦接元件，係位於該半導體晶片的該接觸焊墊與該引腳的該附著區之間，而在該半導體晶片的該接觸焊墊與該引腳之間形成電連接；其中，在該回流期間，對於該電耦接元件而言，該引腳的該附著區具有比該非附著區更好的潤濕性；以及其中，該引腳含有銅，該附著區包括位於該引腳之表面上的銀，該非附著區包括位於該引腳之表面上的銅氧化物，其中，該電耦接元件與該引腳之該附著區上的銀相接觸。
  13. 如申請專利範圍第12項所述的微電子封裝組件，其中，該引腳包括導電材料，該附著區包括位於該引腳之表面上的潤濕材料，其中，該電耦接元件與該引腳之該附著區的該潤濕材料相接觸。
  14. 如申請專利範圍第12項所述的微電子封裝組 件，其中，該引腳包括導電材料，該附著區包括位於該引腳之表面上的潤濕材料，該非附著區包括該導電材料的氧化物，其中，該電耦接元件與該引腳之該附著區的該潤濕材料相接觸。
  15. 如申請專利範圍第12項所述的微電子封裝組件，其中，在該回流期間，對於該電耦接元件而言，該附著區具有第一潤濕接觸角，該非附著區具有第二潤濕接觸角，其中，該第一潤濕接觸角小於90°，該第二潤濕接觸角大於90°。
  16. 如申請專利範圍第15項所述的微電子封裝組件，其中，該第二潤濕接觸角與該第一潤濕接觸角的差值大於20°。
  17. 如申請專利範圍第12項所述的微電子封裝組件，其中，該電耦接組件包括焊料球。
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