TWI472061B - 依據結晶小面化表面而改良之外部擷取發光二極體 - Google Patents

依據結晶小面化表面而改良之外部擷取發光二極體 Download PDF

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TWI472061B
TWI472061B TW99121117A TW99121117A TWI472061B TW I472061 B TWI472061 B TW I472061B TW 99121117 A TW99121117 A TW 99121117A TW 99121117 A TW99121117 A TW 99121117A TW I472061 B TWI472061 B TW I472061B
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light
emitting diode
mesa
emitting
group iii
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John Adam Edmond
Matthew Donofrio
David Beardsley Slater
Hua-Shuang Kong
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Cree Inc
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Description

依據結晶小面化表面而改良之外部擷取發光二極體
本發明係關於以寬帶隙材料形成之發光二極體(LED)，且更特定而言係關於改良光自此類LED之擷取。
發光二極體係一在半導體材料或材料系統內之電子及空洞重組時發射光之半導體光子器件。通常藉由一跨形成一p-n接面之p型及n型材料之偏置電壓驅動該重組。因該重組係一量子力學步驟，故所產生之光子、其能量及因而該光子之頻率及波長(感知為顏色)將相依於一所允許重組處理之最大能量。
可見顏色：綠色、藍色及紫色，以及電磁光譜之紫外部分表示更高頻率且因而表示更高能量之光子。作為一結果，藍色光可僅由具有至少約2.6電子伏特(eV)帶隙之材料產生。然而，因藍色係一主要顏色且尤其為全色器件及產生白色光(作為紅色、綠色及藍色之一組合)之器件所需要，故大量新近關注一直集中於自諸如碳化矽、金剛石及第III族氮化物之材料形成之寬帶隙發光二極體之改良。特定而言，由第III族氮化物活性區域形成之發光二極體持續獲得遞增之商業認可且在日常應用中變得日益普遍。
諸多因素一起導致了一發光二極體之可見發射。然而，作為一潛在限制因素，並非每一重組所產生之光子向外離開該實體二極體。換言之：一既定電壓將產生一既定數量之重組事件，該等重組事件又將產生一既定數量之光子(未必係相同數量)。然而，並非所產生之光子將全部作為可見光向外發射。代之，該等光子經受包括再吸收及內部反射之競爭因素。相應地，全部其他因素係均等，一針對增加一發光二極體之可見輸出之目標係增加沿一預期之照明方向實體地離開該二極體之光子之部分(百分比、比例)。
Snell定律之影響代表一LED之外部發射中之另一因素，亦即，當光碰到兩不同材料之間之一介面時該光之行為。具體而言，當光波到達此一介面時，其將反射或折射。差異(以及折射之任一角度)取決於該毗鄰材料之折射率及該光之入射角度。在一LED中，該等毗鄰材料中之一者係一半導體且另一者係該鄰接環境。在某些情形中此係空氣，同時在其他情形中其係一透鏡材料，常常係一對可見範圍內之頻率透明之聚合物。增加所發射之光子碰到該邊界之不同角度之數量相應地增加了將更多光子發射出而非內部地反射之統計概率。相應地，因已增加了基於第III族氮化物之二極體之電效率，故增加基於該邊界之效率之機會已變得更具吸引力。該等努力之實例包括(但不限定於)通常同本發明一起受讓之第6,791,119號美國專利和第20040041164號及第20050247950號美國專利申請公開案。
在一態樣中，本發明係關於一發光二極體，該發光二極體包括一支撐結構及一在該支撐結構上之第III族氮化物發光活性結構臺面。該臺面具有其沿著該第III族氮化物之一指數晶體平面之側壁。
在另一態樣中，本發明係關於一種形成一具有改良光擷取之發光二極體之方法。在此態樣中，該方法包括如下步驟：自一第III族氮化物發光結構移除一基板，該第III族氮化物發光結構包括一位於該第III族氮化物上對置於該基板之子安裝座；且其後蝕刻該第III族氮化物(已藉由一各向異性蝕刻自其移除了該基板)之表面以於該表面上形成晶體小面，其中該等小面係沿該第III族氮化物之一指數平面。該方法亦可包括藉由一各向異性蝕刻來蝕刻該發光結構以形成一具有沿該第III族氮化物之一指數平面之邊緣之臺面。
結合該等隨附圖式根據下文之詳細說明，本發明之上述及其他目的與優點以及達成該等目的與優點之方式將變得更加明瞭。
圖1係一根據本發明之發光二極體20之一示意性剖視圖。應瞭解：圖1圖解說明本發明之具體態樣；熟習此項技術者結合上下文將瞭解該等態樣；且可論述關於LED之各種其他細節，但為清晰起見已自圖1略去。
廣義上講，發光二極體20包括一在圖1中藉由括弧箭頭21標記之支撐結構，及一在支撐結構21上藉由括弧箭頭22同樣地標記之第III族氮化物發光活性結構。該活性結構形成一以23寬泛地指定之臺面。臺面23使其側壁24沿形成該活性結構之第III族氮化物之一指數晶體平面。
術語"指數晶體平面"係以其符合有理指數定律之眾所周知之意義而加以使用，亦即，對任何晶體物質而言存在一組軸，依據該等軸所有天然存在之表面具有與小整數成比例之互補截矩。該等整數通常被以用於六方晶體(包括氮化鎵)之格式"(hkl)"或(hkil)提及。在闡述一晶體平面中，所選擇之整數組應係諸多可能選擇中之最簡單組，且該最簡單組被稱為一晶體平面之密勒(Miller)指數。晶體內天然存在或形成之平面具有一高表面密度之晶格點位，且該等晶格點位以一在晶體科學及術語中良好理解之方式規則地在三維上重複。
熟悉晶體結構者將當然認識到可使用密勒指數系統闡述任一晶體平面。因而，一藉由一機械製程(例如，鋸割該晶體或於一電漿內蝕刻其)形成之晶體平面將具有一適當組正確地闡述該平面之(hkl)或(hkil)指數。然而，該等機械地形成之平面很少被稱為指數晶體平面，且本文亦不如此稱謂，乃因其不代表與小整數成比例之互反截距(reciprocal intercept)。反之，該等平面代表可能與大整數("17、13、7")成比例之截距，該等大整數與特定晶體之天然存在之表面無關。如本文所使用，負號("-")用於代替該"棒"約定(bar convention)以指示一在該負軸上之截距。
為區分本發明之指數晶體平面，本文亦藉由形容性短語"化學形成"來指代它們以表示已使用濕化學蝕刻產生了該等表面。該濕蝕刻之性質產生天然存在之指數晶體平面而非不具有天然存在晶體之特性之平面。舉例而言，本文所包括之如圖17之照片圖解說明在六方晶係GaN內之{10-11}平面族內之臺面側壁，且圖17具體地圖解說明(10-11)、(1-101)及(0-111)平面連同[-12-10]及[-1010]方向。根據本發明，相對於該支撐結構之角度係藉由所獲得之指數平面決定。可依據生長基板之定向、該臺面相對於該生長基板之定向(例如，該臺面於該生長平面內之旋轉)及/或該蝕刻製程而變化該角度。在圖17之實施例中，其中該臺面係由生長於該(0001)平面上之一SiC基板上之GaN製成，該等臺面側壁於一側上係處於約58°且在一毗鄰側上係處於約62°。可將該等角度製造得更對稱或更不對稱且可藉由改變上文所提及之參數中之一者或多者而增加該非對稱性。以此方式，可達成其他角度(例如，大於42°)。熟習此項技術者將認識到：立方GaN或其他具有其他晶體對稱性之材料將呈現類似的特性(但以其他角度)。藉由其他材料或其他晶體結構可達成其他晶體小面角度(臺面或側壁)。一般而言，該等臺面側壁沿該臺面材料之指數晶體平面而形成，且在所圖解說明之實施例中，該等側壁相對於該支撐結構形成一在約58與62度之間之角度。
根據特性，主要地藉由該蝕刻組合物與該氮化鎵之間之一化學反應(與一局部或次級反應相反)形成一化學形成表面。因而，氫氧化鉀濕蝕刻形成一化學形成表面。一其中藉由一適當氣體化學地蝕刻該氮化鎵之"逆向CVD"製程亦可形成一化學形成表面。該等化學形成表面在一原子尺度上係天然地平坦。
藉由比較，化學形成表面不包括藉由鋸割或藉由電漿蝕刻(即使該電漿蝕刻組合物與該基礎晶體之間可能發生一些化學反應)所產生之彼等表面。此外，幹(電漿)蝕刻不產生天然存在之指數表面。幹蝕刻亦不利地包括氮化鎵內之損傷。該損傷中之一些實體地吸收光，同時其他損傷導致影響該晶體及因而所得器件之電子特性之點缺陷。
在例示性實施例中，支撐結構21係由複數個導電層形成或包括一導電路徑以使當將二極體20安裝於(例如)一導線框上，其將具有一垂直定向(亦即，驅動該二極體之電流將軸向地而非橫向地流經該二極體)。在多數環境中，一垂直二極體提供超過一"水平"二極體之優點，乃因一垂直二極體一般較一具有相同發射面積之水平二極體呈現一較小佔用面積。在一例示性實施例中，支撐結構21可包括複數個元件。該等元件可包括(如所圖解說明)一基板25、障壁層26及31，及金屬黏合層27及30。普通頒予之第6,740,906號美國專利中詳細闡述了此類子安裝結構，該專利以引用方式全文倂入本文中。
此複數個層係以所謂的"覆晶"定向準備並安裝之二極體之實例。儘管本文在覆晶背景下闡述了本發明，但本發明並不限定於該覆晶定向。
在圖1中所圖解說明之實施例中，二極體20之一發射表面32係活性結構22之一第三族氮化物表面。此與一些其中一透明材料(例如，炭化矽或藍寶石)形成該二極體之一發光表面之現行器件形成對照。
所圖解說明之發光結構22係由一具有暴露氮表面之n型氮化鎵頂(終止)層33及一p型氮化鎵層35形成。對置導電層33及35形成一用於重組目的之p-n接面。
應瞭解：該發光結構可包括更大數量之元件；例如，用於各種目的之包括諸如多個量子井或超晶格結構等結構之額外及/或介入層。因可依據本發明使用該等更複雜結構及圖1中所圖解說明之更基礎結構兩者，故將不再詳細論述該等其他結構。可針對該等鎵表面、非極性或半極性表面發展出其他蝕刻劑。
亦應瞭解，儘管按照氮化鎵(GaN)闡述圖1，但該結構符合三重及四重第III族氮化物(例如，AlGaN、InGaN及AlInGaN)。關於本發明之特徵，該等材料系統已被充分瞭解。
如在先前參照之第6,740,906號美國專利中所陳述，支撐結構21通常選自由金屬、半導體及金屬和半導體之組合組成之群。
在圖1中所圖解說明之例示性實施例中，氮化鎵層33及35終止於臺面23之指數晶體平面側壁24內。基於如本文進一步所論述的製造該二極體之方式，該等臺面側壁沿氮化鎵之(hkil)晶體平面下垂。
圖1亦圖解說明一鏡面36，該鏡面毗鄰發光結構22但對置於發射表面32定位以提高自二極體20之光擷取。
圖1亦圖解說明：在例示性實施例中，二極體20之發光表面32係同樣地結晶，亦即由複數個呈現該第III族氮化物之指數平面之晶體形體形成。特定而言，當(例如)使用相同或類似蝕刻劑及/或製程形成時，結晶表面32之晶體平面與臺面側壁24之晶體平面一致(亦即，在幾何意義上係等同)。如將關於圖13及17(本文稍後將論述)所觀察，主要顯示該等晶體平面中之一者，但亦顯示其他平面。
發光二極體20亦包括一至支撐結構21之電阻接觸37及一至活性結構22之電阻接觸40。在一些實施例中，將電阻接觸40製造至結晶紋理化表面32(例如，圖1)，同時在其他實施例中為接觸40提供一平坦表面(未顯示)。於一粗糙表面(例如，結晶紋理化表面32)上形成電阻接觸40可於接觸40與活性結構22之間提供一改良的實體及電連接。一鈍化層28通常包括於提供電隔離及環境保護兩者。該鈍化層通常係由二氧化矽、化學計量之氮化矽、非化學計量之氮化矽或其組合形成。
因其微小尺寸(此類型之LED晶片沿一側通常係約200-1000微米)，在例示性製造技術中，以一共同晶圓上複數個臺面結構而非單獨之方式形成諸如所圖解說明之二極體20之二極體。
在另一態樣中，本發明包含形成一具有改良的光擷取特性之發光二極體之方法。在此態樣中，藉由圖2至7圖解說明本發明。圖2圖解說明一由一半導體基板43、一發光活性結構44及一子安裝結構45形成之前體結構42，如所圖解說明，結構45具有兩元件46及47，其中47表示一黏合金屬。
在該方法中，移除基板43(在例示性實施例中，其係炭化矽，乃因其提供支撐GaN(氮化鎵)或其他第III族氮化物層之優點)以形成圖3中所圖解說明之另一前體結構50(其含有除基板43之外之與圖2相同之元件)。一用於移除該SiC基板之例示性技術陳述於先前倂入之第20050247950號公開案中。可使用其他基板，例如，藍寶石、AlN、Si或其他適合於第III族氮化物生長之基板。
圖4-7表示下兩個方法步驟，但其中圖4及5中所圖解說明之步驟採用與圖6及7之彼等步驟相反之順序以形成該製成結構之稍微不同之實施例。在圖3至圖4之進程中，該方法包含藉由一各向異性蝕刻來蝕刻(在掩膜之情形下)發光結構44以形成至少一個且通常複數個臺面51，其中其邊緣52以一與剛剛相對於圖1所述相同之方式沿著活性結構44之第III族氮化物之一指數平面。
其後，在圖4與圖5之間之進程中，亦藉由一各向異性蝕刻來蝕刻第III族氮化物活性部分44之表面以於各個表面53上形成晶體小面，其中該等小面係沿著該第III族氮化物之一指數平面。因在該表面蝕刻之前蝕刻圖5內之臺面51，故其具有指數側壁，但不主要地具有單獨小面化形體。在某些實施例中，可將一鈍化層28(圖1)置於臺面51之側壁52及/或頂表面上。隨後，可自該頂表面移除該鈍化層之部分以允許形體化表面53之選擇性形成。該鈍化層可係SiN或任一其他在其他方面與該結構及該二極體之作業相容且在其他方面不妨礙剩餘方法步驟中之任一者之適合的材料。在此實施例中，該鈍化層擔當一遮罩以界定包括形體53之該頂表面之部分。可使用其他習用微影技術(亦即，一用於移除SiN之基於氟化物之濕或幹蝕刻)合意地打開該遮罩。
在自圖3至圖6且然後7之互補進程中，首先藉由該各向異性蝕刻來蝕刻發射(活性)部分44之表面以於表面53內形成該等晶體小面。然後，在圖6至圖7之進程中，實施該臺面之掩膜及蝕刻以產生一稍微不同且甚至互補之結構。特定而言，在圖7中所圖解說明之所得結構中，臺面51包括指數平面側壁52及小面化表面53，但如藉由多個線54所指示，側壁52亦被額外地小面化。側壁小面54由在該第一步驟而非該第二步驟內(在蝕刻該等臺面之前)已被小面化之表面53產生。使用該等補充步驟，圖7內之臺面51具有包括複數個單獨指數平面小面54之指數平面臺面側壁52。如圖5及7兩者所圖解說明，在例示性實施例中，於一共同晶圓上形成複數個臺面。
藉由一通常選自由如下各物組成之群之各向異性濕蝕刻實施該等蝕刻步驟兩者(亦即，用於該表面及用於該等臺面之蝕刻)：氫氧化鉀(KOH)、氫氧化鈉(NaOH)、六氰高鐵酸鉀(K2 [Fe(CN)6 ])及其組合。用於形成本發明之特徵之其他製程亦係可能。一在約0.01與0.04莫耳(M)之間之KOH溶液將以一適當速度蝕刻以形成該等臺面或該小面化發射表面或兩者。在一光電化學("PEC")技術中，藉由紫外光(例如，365奈米波長之5-10 mW/cm2 )輻照該GaN(或其他第III族氮化物)以提高蝕刻速度。
當將相同蝕刻劑用於兩蝕刻(表面及臺面)時，該等臺面側壁將攜載與該等表面小面相同(亦即，幾何地等同)之指數平面。如本文所使用，術語"相同指數平面"係指一具有相同指數但在空間上並非同一平面之平面。
特定而言，該等蝕刻條件將確定一平面族{hkil}而非一單一平面(hkil)。特定而言，該氫氧化鉀蝕刻可以且可能將形成數個平面族，但基於特定蝕刻組合物(KOH)於特定晶體(GaN)上之使用該等平面族將係一致。作為一對照實例，在矽技術中可購買將化學地形成所選定之合意平面之特定蝕刻劑。吾人預期，相對於第III族氮化物相同之情形可能係正確，但此尚未被確認。然而，已觀察到，該氫氧化鉀之濃度及溫度趨向於導致所獲得之平面族之甚小差異。
如於此項技術中一般瞭解，氫氧化鉀相對於諸多半導體材料係一各向異性蝕刻劑。因其以一顯著地不同之速度相對於不同晶體平面蝕刻，故其將相應地順利地蝕刻諸如氮化鎵之材料以形成一特殊晶體表面(參閱第5,909,458號美國專利第3欄第51-56行及第5,923,481號第3欄第12-25行)。
在本發明中，該氫氧化鉀趨向於形成一沿該氮化鎵平面(hkl)之表面。另外，且亦於此項技術者中所瞭解，KOH在一相對寬的蝕刻時間及條件範圍內產生該有利晶體表面。
作為一經驗性觀察，該KOH蝕刻看似形成一主{hkil}表面族，但亦形成具有不同{hkil}指數之次級表面族。
作為比較，習用製程使用一機械或幹蝕刻(亦即，電漿)製程形成該等臺面，該等製程產生一未必沿一指數晶體平面而係結構界定技術之產品之臺面側壁。該等製程通常產生一用於器件隔離或接面輪廓之名義上垂直之側壁臺面。
本發明之方法改為藉由該各向異性蝕刻提供一臺面來隔離單獨接面及器件且將其彼此分離以使該等形成該發光活性結構之層與該臺面之其餘一起終止於相同指數邊緣內。
若需要用於補充目的，該方法亦可包括一干蝕刻該等臺面側壁之至少一部分之步驟，且可各向異性地蝕刻該等側壁之前或在各向異性地蝕刻該等側壁之後實施此步驟。
圖8、9及10概述三種潛在結果。圖8顯示具有指數平面側邊緣52之臺面51。圖9顯示具有指數側邊緣52及晶體小面化頂表面53之臺面51。圖10圖解說明具有晶體小面化發射表面53、指數平面側壁52及側壁52之小面54之臺面51。
圖11至17係根據本發明之二極體之選定部分之照片且圖解說明該方法及所得結構之特性之真實實例。
圖11及12係組合照片，其中較大照片係該二極體之晶體小面化表面(例如，圖5、7、及8-10中之項53)之一俯視平面圖且該等插圖係相同表面之剖視或透視圖。特定而言，該等插入照片突出了該表面之晶體指數平面定向。
圖13圖解說明一臺面之一部分，其中該晶體表面上之形體之角度等同於該臺面側壁之角度。圖13亦顯示鈍化層28。在此實施例中，鈍化層28保留於該等側壁上且環繞該臺面之頂表面之周邊，藉此限定該小面化表面。
圖14係該表面電阻接觸之一俯視平面圖，且圖15係當製造至該晶體小面化表面時該表面接觸之一剖視圖。
圖16圖解說明一在該表面經發展以產生所得側壁(其跟隨該晶體平面但未被主要地小面化)之前已被形成(蝕刻)之臺面之一拐角。
圖17圖解說明一臺面之一類似拐角，其中該晶體表面係在該臺面之前形成以使當形成該臺面時其呈現該等小面化側壁。圖16及17圖解說明該臺面之一側上之側壁角度可不同於該臺面之毗鄰側上之側壁角度。
因根據本發明之小面化結構係再濕蝕刻製程中自然地形成，故本發明避免了對形成或獲得透鏡表面之更複雜方法或其他嘗試增加光擷取之技術之需要。
圖18、19及20示意性地圖解說明當連續使用兩種蝕刻時在一化學蝕刻之前藉助乾或電漿各向異性蝕刻(例如，一反應性離子蝕刻)所能形成之臺面形狀。圖18示意性地圖解說明一氮化鎵層60之橫截面，當被在一電漿內各向異性地蝕刻時該氮化鎵層產生垂直或接近垂直(圖19)但不表示一本文所使用之意義上之指數晶體平面之側壁61。當隨後在該濕化學蝕刻中蝕刻氮化鎵晶體60時，其產生一第二組如圖20中所圖解說明之天然存在之表面62。
圖21、22及23示意性地圖解說明當該濕蝕刻在該乾或電漿蝕刻之前時形成之所得形狀。因而，在圖21中，首先化學地發展氮化鎵層60以形成指數表面62，且然後，在自圖22至圖23之進程中電漿蝕刻以在一與其於圖20中之外觀相反之位置內產生更垂直之側壁61。
圖24至27圖解說明一於其表面上具有平坦及化學地形成之形體兩者之臺面之產生。在圖24中，該氮化鎵晶體再次被以60指定且被圖解說明有一適當遮罩64，該遮罩之實例係SiN或可自市場購得之可以其他方式抵擋該濕蝕刻之聚合物膜。在遮罩64位於適當位置之情形下，自圖24至圖25之進程示意性地圖解說明一再次產生指數晶體表面62之濕蝕刻。在自圖25至圖26之進程中，移除(打開)遮罩64之部分以界定所得形體化表面32(亦即，在自圖26至圖27之進程中進行該第二濕蝕刻之後之表面)。此產生一具有指數側壁62、一些平坦正面部分65(通常係一周邊，但未必僅限於此)及晶體形體32(其與(例如)圖1中相同地編號之形體或圖5-7、9及10中以53標注之彼等形體相同)之臺面。
該等各個順序兩者皆產生一具有一沿一指數平面之第一主要部分(亦即，大於次要)及一相對於該第一主要部分成一鈍角之第二主要部分之兩部分側壁。
在該等圖式及說明書中已闡述了本發明之一較佳實施例，且儘管使用了特定術語，然而，該等術語僅用於一般性及描述性意義而非用於限定之目的，本發明之範疇係界定於申請專利範圍中。
20．．．發光二極體
21．．．支撐結構
22．．．第III族氮化物發光活性結構
23．．．臺面
24．．．側壁
25．．．基板
26．．．障壁層
27．．．金屬黏合層
28．．．鈍化層
30．．．金屬黏合層
31．．．障壁層
32．．．發射表面
33．．．n型氮化鎵層
35．．．p型氮化鎵層
36．．．鏡面
37．．．電阻接觸
40．．．電阻接觸
42．．．前體結構
43．．．半導體基板
44．．．發光活性結構
45．．．子安裝結構
46．．．元件
47．．．黏合金屬
50．．．前體結構
51．．．臺面
52．．．側壁
53．．．小面化表面
54．．．側壁小面
60．．．氮化鎵層
61．．．側壁
62．．．指數表面
64．．．遮罩
65．．．平坦正面部分
圖1係一根據本發明之發光二極體之一實施例之一示意性剖視圖。
圖2至7係圖解說明本發明之某些方法態樣之示意性剖視圖。
圖8、9及10係本發明之某些結構態樣之示意性圖解說明。
圖11至17係倂入本發明之態樣之二極體極二極體部分之照片。
圖18、19及20示意性的圖解說明當連續使用兩種蝕刻時所能形成之臺面形狀。
圖21、22及23示意性的圖解說明當濕蝕刻在該乾或電漿蝕刻之前時形成之所得形狀。
圖24至27圖解說明一於其表面上具有平坦及化學地形成之形體兩者之臺面之產生。
20．．．發光二極體
21．．．支撐結構
22．．．第III族氮化物發光活性結構
23．．．臺面
24．．．側壁
25．．．基板
26．．．障壁層
27．．．金屬黏合層
28．．．鈍化層
30．．．金屬黏合層
31．．．障壁層
32．．．發射表面
33．．．n型氮化鎵層
35．．．p型氮化鎵層
36．．．鏡面
37．．．電阻接觸
40．．．電阻接觸

Claims (14)

  1. 一種發光二極體，其包含一具有使用濕化學蝕刻形成之多個側壁之第III族氮化物發光活性結構臺面，其中該等側壁係由該第III族氮化物之一指數晶體平面所界定。
  2. 如請求項1之發光二極體，其中該二極體之發射表面係該活性結構之一第III族氮化物表面。
  3. 如請求項1之發光二極體，其進一步包含一用於該臺面之支撐結構，該支撐結構係選自由如下各物組成之群：金屬、半導體基板及子安裝結構。
  4. 如請求項1之發光二極體，其中該發光活性結構包含至少一p型氮化鎵層及至少一n型氮化鎵層。
  5. 如請求項4之發光二極體，其中該等氮化鎵層終止於該臺面之該指數晶體平面邊緣內。
  6. 如請求項1之發光二極體，其中該等臺面側壁係沿著氮化鎵之(hkil )晶體平面。
  7. 如請求項1之發光二極體，其中該等臺面側壁係沿著六方晶係氮化鎵之{10-11}晶體平面族。
  8. 如請求項1之發光二極體，其進一步在該發光活性結構與該支撐結構之間包含一鏡面。
  9. 如請求項1之發光二極體，其進一步包含一由複數個結晶形體形成之粗糙表面，該等結晶形體呈現該第III族氮化物之指數表面。
  10. 如請求項9之發光二極體，其中該粗糙表面之該等指數平面係與該臺面側壁之該指數平面等同。
  11. 如請求項1之發光二極體，其包含一至該支撐結構之電阻接觸及一至該活性結構之電阻接觸。
  12. 如請求項9之發光二極體，其包含一至該粗糙表面之電阻接觸。
  13. 如請求項1之發光二極體，其中該等側壁相對於該支撐結構形成一在約58與62度之間之角度。
  14. 一種發光裝置，其具有位於一共同晶圓上之改良光擷取特性之複數個發光二極體，每個發光二極體包含：一子安裝結構；第III族氮化物之至少一個n型層及一個p型層，其位於該子安裝結構上且形成p-n接面，以用於重組載體及在一所施加電壓下發射光子；該等第三族氮化物層在該子安裝結構上形成一臺面，其中該臺面之該等側壁係由該第III族氮化物之一指數平面界定；該二極體終止於該等第III族氮化物層中之一者內，同時該終止之第III族氮化物層形成該二極體之發光表面；該發光表面係由複數個呈現該第III族氮化物之指數平面之晶體結構形成；一至該發光表面之電阻接觸；一至該子安裝結構之電阻接觸；及一鈍化層，其位於該等臺面側壁及該子安裝結構之上部上，以用於對該臺面內之該等第III族氮化物層進行電隔離及環境保護， 其中該鈍化層係選自由如下各物組成之群：二氧化矽、化學計量之氮化矽、非化學計量之氮化矽及其組合。
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