TWI345321B - Improved external extraction light emitting diode based upon crystallographic faceted surfaces - Google Patents

Improved external extraction light emitting diode based upon crystallographic faceted surfaces Download PDF

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TWI345321B
TWI345321B TW096103390A TW96103390A TWI345321B TW I345321 B TWI345321 B TW I345321B TW 096103390 A TW096103390 A TW 096103390A TW 96103390 A TW96103390 A TW 96103390A TW I345321 B TWI345321 B TW I345321B
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light
mesa
nitride
emitting diode
emitting
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TW200742130A (en
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John Adam Edmond
Matthew Donofrio
David Beardsley Slater
Hua-Shuang Kong
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Cree Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

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Description

1345321 九、發明說明： 【發明所屬之技術領域】 本發明係關於以寬帶隙材料形成之發光二極體（led)， 且更特定而言係關於改良光自此類LED之擷取。 【先前技術】
發光二極體係一在半導體材料或材料系統内之電子及空 洞重組時發射光之半導體光子器件。通常藉由一跨形成一 p-n接面之p型及n型材料之偏置電壓驅動該重組。因該重 組係一量子力學步驟，故所產生之光子、其能量及因而該 光子之頻率及波長（感知為顏色）將相依於一所允許重組處 理之最大能量。 可見顏色：綠色、藍色及紫色，以及電磁光譜之紫外部 分表示更高頻率且因而表示更高能量之光子。作為一結 果’藍色光可僅由具有至少約2.6電子伏特（eV)帶隙之材料 產生。然而，因藍色係一主要顏色且尤其為全色器件及產 生白色光（作為紅色、綠色及藍色之一組合）之器件所需 要，故大量新近關注一直集中於自諸如碳化矽、金剛石及 第ΠΙ族氮化物之材料形成之寬帶隙發光二極體之改良。特 定而言，由第III族氮化物活性區域形成之發光二極體持續 獲得遞增之商業認可且在曰常應用中變得曰益普遍。 諸多因素一起導致了—發光二極體之可見發射。然而， 作為-潛在限制因冑，並非每—重組所產生之光子向外離 開該實體二極體。換言之：—既定電壓將產生一既定數量 之重组♦件，t玄等重組事件又將i生1定數量之光子 118170.doc 1345321 (未必係相同數量）。然而， 可見光向外發射。代之，右 反射之競爭因素。相應地， 增加一發光二極體之可目紀 ，並非所產生之光子將
全部作為 吸收及内部 均等’ 一針對 沿—預期之照 (百分比、比
Snell疋律之影響代表一 LED之外部發射中
光之入射角度β在一 LED中，該等毗鄰材料中之一者係一 半導體且另一者係該鄰接環境。在某些情形中此係空氣， 同時在其他情形中其係一透鏡材料，常常係一對可見範圍 内之頻率透明之聚合物。增加所發射之光子碰到該邊界之 不同角度之數量相應地增加了將更多光子發射出而非内部 地反射之統計概率。相應地，因已增加了基於第m族氮化 物之二極體之電效率，故增加基於該邊界之效率之機會已 變得更具吸引力。該等努力之實例包括（但不限定於）通常 同本發明一起受讓之第6,791，119號美國專利和第 2004004 11 64號及第20050247950號美國專利申請公開案。 【發明内容】 在一態樣中’本發明係關於一發光二極體，該發光二極 體包括一支撐結構及一在該支撐結構上之第III族氮化物發 光活性結構臺面。該臺面具有其沿著該第III族氮化物之一 118170.doc 1345321 指數晶體平面之側壁。 在另一態樣中，本發明係關於一種形成一具有改良光擷 取之發光二極體之方法。在此態樣中，該方法包括如下步 驟：自一第III族氮化物發光結構移除一基板，該第m族氮 化物發光結構包括一位於該第m族氮化物上對置於該基板 之子安裝座；且其後蝕刻該第出族氮化物（已藉由一各向 異性餘刻自其移除了該基板）之表面以於該表面上形成晶 φ 體小面’其中該等小面係沿該第ΙΠ族氮化物之一指數平 面。該方法亦可包括藉由一各向異性蝕刻來蝕刻該發光結 構以形成一具有沿該第ΙΠ族氮化物之一指數平面之邊緣之 . 臺面。 . 結合該等隨附圖式根據下文之詳細說明，本發明之上述 及其他目的與優點以及達成該等目的與優點之方式將變得 更加明瞭。 【實施方式】 • 圖1係一根據本發明之發光二極體20之一示意性剖視 圖。應瞭解：圖1圖解說明本發明之具體態樣；熟習此項 技術者結合上下文將瞭解該等態樣；且可論述關於LED之 各種其他細節，但為清晰起見已自圖1略去。 廣義上講’發光二極體20包括一在圖1中藉由括弧箭頭 21標記之支樓結構’及一在支撐結構21上藉由括弧箭頭22 同樣地標記之第III族氮化物發光活性結構。該活性結構形 成一以2 3寬泛地指定之臺面。臺面2 3使其側壁2 4沿形成該 活性結構之第III族氮化物之一指數晶體平面。 118170.doc 厶上 術δ吾’，指數晶體平而"总 知之音義而ή 糸以/、符合有理指數定律之眾所周 組轴，依據該等轴所有天:存=晶雜物質而言存在- 例之互補截矩。該等整數通用面具有與小整數成比 化鎵）之抱" 通吊破u用於六方晶體（包括氮 所，擇之J (hkl)”或(hkil)提及。在闡述-晶體平面中， 二：多可能選擇中之最簡單組，且該最 皮％為-00體平面之密勒（Miller)指數。晶體内天 子：、成之平面具有一高表面密度之晶格點位，且該 t格點位以-在晶體科學及術語中良好理解之方式規則 地在二維上重複。 熟悉晶體結構者將當然認_可使用密勒減系統閣述 任一晶體平面。因而，一藉由一機械製程（例如，鑛割該 晶體或於—電衆内餘刻其）形成之晶體平面將具有一適當 組正媒地闡述該平面之（hkl)或（hkiI)指數。然而，該等: 械地形成之平面报少被稱為指數晶體平面，且本文亦不如 此稱謂’乃因其不代表與小整數成比例之互反截距 (reciprocal intercept)。反之，該等平面代表可能與大整數 Γ17、13、7”）成比例之截距’該等大整數與特定晶體之天 然存在之表面無關。如本文所使用，負號用於代替該 ’’棒"約定（bar convention)以指示一在該負軸上之截距。 為區分本發明之指數晶體平面，本文亦藉由形容性短語 ••化學形成"來指代它們以表示已使用濕化學蝕刻產生了該 等表面。該濕蝕刻之性質產生天然存在之指數晶體平面而 非不具有天然存在晶體之特性之平面。舉例而言，本文所 118170.doc 1345321 包括之如圖1 7之照片圖解說明在六方晶係GaN内之{ 1 〇_ 1 平面族内之臺面側壁，且圖17具體地圖解說明（丨〇_丨丨）、 (1-101)及（0-111)平面連同[-12-10]及[-1010]方向。根據本
發明，相對於該支撐結構之角度係藉由所獲得之指數平面 决疋。可依據生長基板之定向、該臺面相對於該生長基板 之定向（例如’該臺面於該生長平面内之旋轉）及/或該蝕刻 製程而變化該角度。在圖17之實施例中，其中該臺面係由 生長於該（0001)平面上之一 sic基板上之GaN製成，該等臺 面側壁於一側上係處於約58。且在一毗鄰側上係處於約 62 。可將該等角度製造得更對稱或更不對稱且可藉由改
變上文所提及之參數中之一者或多者而增加該非對稱性。 以此方式，可達成其他角度（例如，大於42。）。熟習此項技 術者將⑽識到.立方GaN或其他具有其他晶體對稱性之材 料將呈現類似的特性（但以其他角度）。藉由其他材料或其 他晶體結構可達成其他晶體小面角度（臺面或側壁p 一般 而言’該等臺面側壁沿該臺面材料之指數晶體平面而： 成’且在所圖解說明之實施例中，該等側壁相對於該支樓 結構形成一在約58與62度之間之角度。 面 一根據特性’主要地藉由祕刻組合物與該氮化鎵之間之 —化學反應（與—局部或次級反應相反）形成-化學形成表 _ °因而’氫氧化卸濕#刻形成—化學形成表面。— 猎由-適當氣體化學地蝕刻該氮化鎵之 可形成一化學报士主I J l VU i私亦 予形成表面。該等化學形成表 上係天然地平扫。 原子尺度 118170.doc 1345321 藉由比較，化學形成表面不包括藉由据割或藉由_ 刻（即使該電漿蝕刻組合物與該基礎晶體之間可能發生一 些化子反應）所產生之彼等表面。此外，幹（電毁峰刻不產 生天然存在之指數表面。幹蝕刻亦不利地包括氮化鎵内之 損傷。該損傷中之一些實體地吸收光，同時其他損傷導致 影響該晶體及因而所得器件之電子特性之點缺陷。 在例不性實施例中，支撐結構2丨係由複數個導電層形成 φ 或包括一導電路徑以使當將二極體20安裝於（例如）一導線 框上，其將具有一垂直定向（亦即，驅動該二極體之電流 將軸向地而非橫向地流經該二極體）。在多數環境中，一 ' 垂直二極體提供超過一，，水平，，二極體之優點，乃因一垂直 - 一極體一般較一具有相同發射面積之水平二極體呈現一較 小佔用面積。在一例示性實施例中，支撐結構21可包括複 數個元件。該等元件可包括（如所圖解說明）一基板、障 壁層26及31 ’及金屬黏合層27及30。普通頒予之第 _ 6,740,906號美國專利中詳細闡述了此類子安裝結構，該專 利以引用方式全文倂入本文中。 此複數個層係以所謂的"覆晶"定向準備並安裝之二極體 之實例°儘管本文在覆晶背景下闡述了本發明，但本發明 並不限定於該覆晶定向。 在圖1中所圖解說明七實施例中，二極體20之一發射表 面32係活性結構22之一第三族氮化物表面。此與一些其中 一透明材料（例如，炭化矽或藍寶石）形成該二極體之一發 光表面之現行器件形成對照。 H8l70.doc -11 - 1345321 所圖解說月之發光結構22係由一具有暴露氮表面之η型 氮化鎵頂（終止）層33及—Ρ型氮化鎵層35形成。對置導電層 33及35形成一用於重組目的之ρη接面。 應瞭解：該發光結構可包括更大數量之元件；例如，用 於各種目的之包括諸如多個量子井或超晶格結構等結構之 額外及/或介人層。因可依據本發明使用該等更複雜結構 及圖1中所圖解說明之更基礎結構兩者，故將不再詳細論 述該等其他結構。可針對該等鎵表面、非極性或半極性表 面發展出其他蝕刻劑。 亦應瞭解，儘管按照氮化鎵（GaN)闡述圖i，但該結構符 合三重及四重第III族氮化物（例如，A1GaN、InGaN&
AlInGaN)。關於本發明之特徵，該等材料系統已被充分瞭 解。 如在先前參照之第6,740,906號美國專利中所陳述，支樓 結構21通常選自由金屬、半導體及金屬和半導體之組合組 成之群。 在圖1中所圖解說明之例示性實施例中，氮化鎵層3 3及 3 5終止於臺面23之指數晶體平面側壁24内。基於如本文進 一步所論述的製造該二極體之方式，該等臺面側壁沿氮化 錄之（hkil)晶體平面下垂。 圖1亦圖解說明一鏡面3 6，該鏡面®比鄰發光結構2 2但對 置於發射表面32定位以提高自二極體20之光擷取β 圖1亦圖解說明：在例示性實施例中，二極體20之發光 表面32係同樣地結晶，亦即由複數個呈現該第in族氮化物 118l70.doc 12 1345321 之札數平面之晶體形體形成。特定而言，當（例如）使用相 同或類似钱刻劑及/或製程形成時，結晶表面32之晶體平 面〃、：S：面側壁24之晶體平面一致（亦即，在幾何意義上係 等同）。如將關於圖13及17(本文稍後將論述）所觀察，主要 顯不該等晶體平面中之一者，但亦顯示其他平面。 發光二極體20亦包括一至支撐結構21之電阻接觸37及一 至/舌|·生結構2 2之電阻接觸4 〇。在一些實施例中，將電阻接
觸40製造至結晶紋理化表面32(例如，圖丨），同時在其他實 施例中為接觸40提供一平坦表面（未顯示）。於一粗糙表面 (例如，結晶紋理化表面32)上形成電阻接觸4〇可於接觸 與活性結構22之間提供一改良的實體及電連接。—鈍化層 28通常包括於提供電隔離及環境保護兩者。該鈍化層通常 係由二氧化矽、化學計量之氮化矽、非化學計量之氮化矽 或其組合形成。 因其微小尺寸（此類型之LED晶片沿一側通常係約2隊
1000微求），在例示性製造技術中，以—共同晶圓上複數 個臺面結構而非單獨之方式形成諸如所圖解說明之二極體 20之二極體。 隹另1诼τ 匕兮形成一具有改良的光擷取特 性之發光二極體之方法。在此態樣中，藉由圖⑴圖解說 明本發明。圖2圖解說明一由—半導體基板…—發光活 性結構44及一子安裝結構45形成之前體結料，如：圖解 說明，結構45具有兩元件46及47,其中47表示—黏合金 屬0 118170.doc -13· 1345321 在該方法中，移除基板43(在例示性實施例中，其係炭 化矽，乃因其提供支撐GaN(氮化鎵）或其他第爪族氮化物 層之優點）以形成圖3中所圖解說明之另一前體結構50(其含 有除基板43之外之與圖2相同之元件）。一用於移除該以匸 基板之例示性技術陳述於先前倂入之第20050247950號公 開案中可使用其他基板’例如，藍寶石、aw、Si或其 他適合於第ΠΙ族氮化物生長之基板。 • 圖4-7表示下兩個方法步驟，但其中圖彳及5中所圖解說 明之步驟採用與圖6及7之彼等步驟相反之順彳以形成該製 成結構之稍微不同之實施例。在圖3至圖4之進程中，該方 . 法包含藉由—各向異性蝕刻來蝕刻（在掩膜之情形下）發光 結構44以形成至少一個且通常複數個臺面$丨，其中其邊緣 52以一與剛剛相對於圖1所述相同之方式沿著活性結構44 之第III族氮化物之一指數平面。 其後’在圖4與圖5之間之進程巾，㈣由一各向異性蝕 • 刻來蝕刻第111族氮化物活性部分44之表面以於各個表面53 上形成阳體小面，其中該等小面係沿著該第m族氮化物之 才曰數平面。因在該表面蝕刻之前蝕刻圖5内之臺面5丨， 故其具有指數侧壁’但不主要地具有單獨小面化形體。在 某二貫施例中，可將一鈍化層28(圖〗）置於臺面$ 1之側壁 及/或頂表面上。隨後，可自該頂表面移除該鈍化層之部 分以允許形體化表面53之選擇性形成。該鈍化層可係SiN 或任其他在其他方面與該結構及該二極體之作業相容且 在其他方面不妨礙剩餘方法步驟中之任一者之適合的材 118170.doc 14 1345321 料。在此實施例中，該鈍化層擔當一遮罩以界定包括形體 53之該頂表面之部分。可使用其他習用微影技術（亦即， 一用於移除SiN之基於氣化物之濕或幹蝕刻）合意地打開該 遮罩。 在自圖3至圖6且然後7之互補進程中，首先藉由該各向 異性姓刻來触刻發射（活性）部分44之表面以於表面53内形 成該等晶體小面。然後’在圖6至圖7之進程中，實施今東 φ 面之掩膜及蝕刻以產生一稍微不同且甚至互補之結構。特 定而言’在圖7中所圖解說明之所得結構中，臺面51包括 指數平面侧壁52及小面化表面53，但如藉由多個線54所指 - 示，側壁52亦被額外地小面化。側壁小面54由在該第一步 驟而非該第二步驟内（在蝕刻該等臺面之前）已被小面化之 表面53產生。使用s亥荨補充步驟，圖7内之臺面η具有包 括複數個單獨指數平面小面54之指數平面臺面側壁52。如 圖5及7兩者所圖解說明，在例示性實施例中，於一共同晶 鲁圓上形成複數個臺面。 猎由一通常選自由如下各物組成之群之各向異性濕蝕刻 貫施》亥等蝕刻步驟兩者（亦即，用於該表面及用於該等臺 面之蝕刻）：氫氧化鉀（KOH)、氫氧化鈉（Na〇H)、六氰高 鐵酸鉀（KHFeNN)6])及其組合。用於形成本發明之特徵之 其他製程亦係可能。一在約〇.〇1與〇.〇4莫耳（M)之間之KOH 六液將以適當速度触刻以形成該等臺面或該小面化發射 表面或兩者。在一光電化學（”pEC”）技術中，藉由紫外光 (例如’ 365奈米波長之5-10 mW/cm2)輻照該GaN(或其他第 H8170.doc -15- 1345321 III紅氮化物）以提局钱刻速度 當將相同飯刻劑用於兩韻刻(表面及臺面)時，該等臺面 側壁將《與該等表面小面相同(亦即，幾何地等同 數平面。如本文所使用’術語”相同指數平面，，係指—且有曰 相同指數但在空間上並非同一平面之平面。
?寺定而t:該等钱刻條件將確定—平面族{hkil}而非— 單平面（hkil)。特定而言，該氮氧化卸敍刻可以且可能 將形成數個平面知’但基於特定㈣組合物（〖㈣於特定 晶體（GaN)上之使用該等平面族將係—致。作為__對照實 例，在石夕技術中可購買將化學地形成所選定之合意平面之 特定㈣劑。吾人預期’相對於第m族氮化物相同之情形 可月b係正，但此南。姑 向禾被確5忍。然而，已觀察到，該氫氧 化鉀之濃度及溫度趨向於導致所獲得之平面族之甚小差 異。 ' 如於此項技術中一般瞭解，氫氧化鉀相對於諸多半導體 材料係一各向異性蝕刻劑。因其以一顯著地不同之速度相 對於不同晶體平面蝕刻’故其將相應地順利地蝕刻諸如氮 化鎵之材料以形成一特殊晶體表面（參閱第5,9〇9,458號美 國專利第3欄第51-56行及第5,923,481號第3攔第12_25行）。 在本發明中，該氫氧化鉀趨向於形成—沿該氮化鎵平面 (hki)之表面。另外，且亦於此項技術者中所瞭解，k〇h在 一相對寬的姓刻時間及條件範圍内產生該有利晶體表面。 作為一經驗性觀察，該ΚΟΗ钱刻看似形成一主{hki”表 面族’但亦形成具有不同{hkil}指數之次級表面族。 118170.doc 16· 1345321 作為比較，習用製程 製程形成守等*面w 機械或幹蝕刻（亦即，電聚） 而而乂 等製程產生—未必沿一指數晶體平 而係結構界定技術之產 s .^ σ之宜面側壁。該等製程通常產 生-用於器件隔離或接面輪廓吊產 士 & 枸酈之名義上垂直之側壁臺面。 ，明之方法改為藉由該各 雜留栖丛 呉性蝕刻提供一臺面來隔 離早獨接面及器件且將且彼 八離以使該等形成該發光活 随、，.。構之層與該臺面之其一 朴 餘起終止於相同指數邊緣内。 右需要用於補充目的，該方 π万去亦可包括一干蝕刻該等 面側壁之至少一部分之+ ν ，且可各向異性地蝕刻該等側 土之前或在各向異性地蝕刻該等側壁之後實施此步驟。 圖8、9及1 〇概述三種潛力έ士里 徑層在結果。圖8顯示具有指數平面 參 邊緣52之$面51。圖9顯示具有指數側邊緣”及晶體小 面化頂表面53之臺面51。圖1〇圖解說明具有晶體小面化發 射表面53、指數平面側壁52及側壁52之小面54之臺面$卜 圖11至17係根據本發明之二極體之選定部分之照片且圖 解說明該方法及所得結構之特性之真實實例。 圖11及12係組合照片，其中較大照片係該二極體之晶體 小面化表面（例如，圖5、7、及8_1〇中之項53)之一俯視平 面圖且該等插圖係相同表面之剖視或透視圖。特定而言， 戎等插入照片突出了該表面之晶體指數平面定向。 圖13圖解說明一臺面之一部分，其中該晶體表面上之形 體之角度等同於該臺面側壁之角度。圖13亦顯示鈍化層 28。在此實施例中，鈍化層28保留於該等側壁上且環繞該 臺面之頂表面之周邊，藉此限定該小面化表面。 118170.doc 1345321 圖14係該表面電阻接觸之一俯視平面圖，且圖i5係當掣 造至該晶體小面化表面時該表面接觸之一剖視圖。 圖16圖解說明一在該表面經發展以產生所得側壁（其跟 隨該晶體平面但未被主要地小面化）之前已被形成（蝕刻）之 臺面之一拐角。 圖17圖解說明一臺面之一類似拐角，其中該晶體表面係 在β玄室面之刖形成以使當形成該臺面時其呈現該等小面化 侧壁。圖16及17圖解說明該臺面之一側上之側壁角度可不 同於該臺面之毗鄰側上之側壁角度。 因根據本發明之小面化結構係再濕蝕刻製程中自然地形 成’故本發明避免了對形成或獲得透鏡表面之更複雜方法 或其他嘗試增加光擷取之技術之需要。 圖18、19及20示意性地圖解說明當連續使用兩種蝕刻時 在一化學蝕刻之前藉助乾或電漿各向異性蝕刻（例如，一 反應性離子蝕刻）所能形成之臺面形狀。圖18示意性地圖 解說明一氮化鎵層60之橫截面，當被在一電漿内各向異性 地蝕刻時該氮化鎵層產生垂直或接近垂直（圖丨9)但不表示 一本文所使用之意義上之指數晶體平面之側壁6丨。當隨後 在該濕化學蝕刻中蝕刻氮化鎵晶體6〇時，其產生一第二組 如圖20中所圖解說明之天然存在之表面62。 圖21、22及23示意性地圖解說明當該濕蝕刻在該乾或電 漿#刻之前時形成之所得形狀。因而，在圖21中，首先化 學地發展氮化鎵層60以形成指數表面62，且然後’在自圖 22至圖23之進程中電漿蝕刻以在一與其於圖2〇中之外觀相 I18I70.doc -18- 1345321 反之位置内產生更垂直之側壁6 i。 圖24至27圖解說明一於其表面上具有平坦及化學地形成 之形體兩者之臺面之產生。在圖.24中，該氣化嫁晶體再次 被以60指定且被圖解說明有—適當遮罩以，該遮罩之實例 係㈣或可自市場講得之可以其他方式抵擋該祕刻之聚 合物膜。在遮罩64位於適當位置之情形下，自圖24至圖25 之進程示意㈣輯說明—再次產生指數晶體表面62之渴 _ °在自圖25至圖26之進程中，移除（打開）遮罩64之部 分以界定所得形體化表面32(亦即，在自圖26至圖27之進 程中進行該第二濕蝕刻之後之表面卜此產生一具有指數 側壁62、一些平坦正面部分65(通常係一周邊，但未必僅 限於此）及晶體形體32(其與（例如^中相同地編號之形體 或圖5-7' 9及Π)中以53標注之彼等形體相同）之臺面。 該等各個順序兩者皆產生—具有-沿-指數平面之第一 主要部分(亦即’大於次要)及一相對於該第一主要部分成 一鈍角之第二主要部分之兩部分侧壁。 在該等圖式及說明書中已閣述了本發明之_較佳實施 例’且儘管使用了特定術語，然而，該等術語僅用於一般 性及描述性意義而非用於限定 定於申請專利範圍中。 本發明之㈣係界 【圖式簡單說明】 圖Η系一根據本發明之發光二極體之一 性剖視圖。 不思 意性剖視 圖2至7係圖解說明本發明之某些方法態樣之示 I18170.doc -19- 1345321 圖8、9及10係本發明夕甘a。 之某些結構態樣之示思性圖解說 明。 圖11至17係倂入本發明夕台&战 . 令知月之態樣之二極體極二極體部分之 照片。 圖18、19及2G示意性的圖解說明當連續使用兩種姓刻時 所能形成之臺面形狀。 • 圖2 1、22及23不意性的圖解說明當濕蝕刻在該乾或電漿 钱刻之前時形成之所得形狀。 圖24至27圖解說明-於其表面上具有平坦及化學地形成 - 之形體兩者之臺面之產生。 【主要元件符號說明】 ， 20 發光二極體 21 支撐結構 22 第III族氮化物發光活性結構 23 臺面 24 側壁 25 基板 26 障壁層 27 金属黏合層 28 鈍化層 30 金屬黏合層 31 障壁層 32 發射表面 118170.doc -20- 331345321 35 36 37 40 42 43 44
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60 61 62 64 65 η型氮化鎵層 Ρ型氮化鎵層 鏡面 電阻接觸 電阻接觸 前體結構 半導體基板 發光活性結構 子安裝結構 元件 黏合金屬 前體結構 臺面 側壁 小面4匕表面 側壁小面 氮化鎵層 側壁 指數表面 遮罩 平坦正面部分 118170.doc -21 -

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第096103390號專利申請案 -Ί7文申請專利範圍替換本(99年6月） • 十、申請專利範園： ' 1. 一種發光二極體，其包含： 一第ΙΠ族氮化物發光活性結構臺面； 該臺面具有其沿著該第m族氮化物之一㈣晶體平面 2. 如請求項!之發光二極體…該二極體之發射表面係 該活性結構之一第Π][族氮化物表面。 3.
4. 如睛求項1之發光 — ’—叫 ^ ^ π巴言 川仍、哆量面 之支撐結構，該支#結構係選自由如下各物組成之群： 金屬、半導體基板及子安裝結構。 如吻求項1之發光二極體，其中該發光活性結構包含至 5. 6.
8. 9. 少一 Ρ型氮化鎵層及至少一 η型氮化鎵層。 如請求項4之發光二極體’其中該氮化鎵層終止於該臺 面之該指數晶體平面邊緣内。 如明求項1之發光二極體，其中該等臺面側壁係沿著氮 化鎵之（/^//)晶體平面。 如吻求項1之發光二極體，其中該等臺面側壁係沿著六 方晶係氮化鎵之{1〇_11}晶體平面族。 如吻求項1之發光二極體，其進一步在該發光活性結構 與5亥支撐結構之間包含一鏡面。 士吻求項1之複數個發光二極體，其位於一共同晶圓 上0 10’如叫求項1之發光二極體，其進一步包含一由複數個結 曰曰形體形成之粗糙表面，該等形體呈現該第III族氮化物 118170-990622.doc 11. 11. 12. 13. 14. 15. 16. 17. 18. 阻接觸及—至該活性結構之電阻接觸。 如請求項H)之發光二極體’其包含_至該粗糙表面之電 阻接觸。 之指數平面。 如明求項10之發光二極體’纟中該粗糙表面之該等指數 平面係與該臺面側壁之該指數平面等同。 月求項1之發光_極體，其包含—至該支撐結構之電 如请求項1之發光二極贈，盆由，， ^徑肢其中忒4側壁形成一相對於 該支撐結構的在約58與62度之間的角度。 士明求項1之發光二極體，其中該臺面具有兩部分側 壁，其中一主要部分沿著該指數平面且一第二主要部分 相對於該第一部分成一鈍角。 一種形成一具有改良的光擷取之發光二極體之方法，該 方法包含： 各向異性地餘刻一第III族氮化物層之表面以於該第 知氮化物表面上形成晶體小面’其中該等小面係沿著該 第HI族氮化物之一指數平面。 如請求項16之方法’其包含：在該各向異性蝕刻之前， 自一第III族氮化物發光結構移除一基板，該第ΙΠ族氮化 物發光結構包括一在該第III族氮化物發光結構上對置於 該基板之子安裝結構。 如請求項16之方法，其包含：藉助一各向異性蝕刻來餘 刻該發光結構以形成一具有沿該第ΙΠ族氮化物之一指數 平面之邊緣之臺面。 118170-990622.doc -2- 19. 20. 21. 22. 23. 24. 25. 26. 27. 如請求項18之方法’其包含：首先蝕刻該臺面，且其後 名虫刻5亥苐III族氣化物表面以產生一指數臺面側壁，但不 具有單獨小面化形體。 如請求項18之方法’其包含：首先蝕刻該第ΠΙ族氮化物 表面’且其後蝕刻該等臺面側壁以產生包括複數個單獨 指數平面小面之指數平面臺面側壁。 如請求項18之方法’其包含：於一共同晶圓上形成複數 個臺面。 如請求項21之方法，其包含：藉由該各向異性蝕刻形成 該等臺面’其中該晶圓上器件之間的單獨接面被彼此分 離’以使形成該發光活性結構之該等層終止於與該臺面 之其餘部分相同之指數邊緣内。 如請求項16之方法，其包含：自該第ΙΠ族氮化物發光臺 面結構移除一碳化矽基板’且其後蝕刻該臺面結構以形 成臺面側壁，該等臺面側壁係沿該第HI族氮化物之一指 數平面之晶體小面。 如請求項23之方法，其包含：沿與該等臺面側壁相同之 才曰數平面形成該等臺面側壁。 如請求項16之方法，其包含：自一氮化鎵發光結構移除 遠基板。 如請求項16之方法，其包含：藉由一選自由如下各物組 成之群之蝕刻劑蝕刻該第m族氮化物表面：氫氧化鉀、 氫氧化鈉、六氰高鐵酸鉀及其組合。 如請求項18之方法’其包含：藉由一選自由如下各物組 H8l70-990622.doc 1345321 成之群之钕刻劑触刻該臺面：氫氧化卸、氣氧化納' 六 乱南鐵酸卸及其組合。 &如請求項16之方法，其進一步包含：乾敍刻該等臺面側 壁之至少一部分。 29. 如請求項28之方法，其包含：在各向異性地蝕刻該等側 壁之前乾蝕刻該等臺面側壁。 30. 如請求項28之方法，其包含：在各向異性地餘刻該等側 壁之後乾蝕刻該等臺面側壁。 31. —種具有改良的光擷取特性之發光二極體，其包含·· 一子安裝結構； 第III族氮化物之至少一個n型層及一個p型層，其位於 該子安裝結構上且形成用於重組載體及在一所施加電壓 下發射光子之ρ-η接面； 該等第三族氮化物層在該子安裝結構上形成一臺面， 其中該臺面之該等側壁係由該第m族氮化物之一指數平 面界定； 該二極體終止於該等第ΙΠ族氮化物層中之一者内，同 時該終止之第III族氮化物層形成該二極體之發光表面； 該發光表面係由複數個呈現該第m族氮化物之指數平 面之晶體結構形成。 一至該發光表面之電阻接觸；及 —至該子安裝結構之電阻接觸β 32·如請求項31之發光二極體’其進一步在該等臺面側壁及 6亥子女裝結構之上部上包含一用於對該臺面内之該等第 Π 8170-990622.doc 1345321 ΠΙ族氮化物層實施電隔離及環境保護之鈍化層。 33,如請求項32之發光二極體，其中該鈍化層係選自由如下 各物組成之群：二氧化矽、化學計量之氮化矽、非化學 計量之氮化矽及其組合。
如凊求項31之發光二極體，其中該子安裝結構包含複數 個金屬及半導體層，該等金屬及半導體層將該等第出族 氮化物層黏合至該子安裝結構且防止摻雜劑或其他材料 自該子安裝結構不合意地遷移至該等第m族氮化物層。 如請求項31之發光二極體，其進—步在該子安袭結構與 該等第III减化物層之間包含—歸提高自該二極體之 光擷取之鏡面層。 • 36.如請求項31之發光：極體，其中該等細族氮化物層係 選自由如下各物組成之群：氮化鎵、氮化紹鎵劑氮化銘 銦鎵。 37. —種發光二極體，其包含： ♦ 一第111族氮化物發光活性結構臺面； 一在該臺面上由複數個結晶形體形成之發射表面，且 該臺面具有幾何上與該發射表面上之該等結晶形體等 同之側壁。 认如請求項37之發光二極體，其進一步包含一用於該臺面 之支撐結構，該支撐結構係選自由如下各物組成之群·· 金屬、半導體基板及子安裝結構。 3 9.如請求項3 7之發光二極體 少一 P型氮化鎵層及至少一 ，其中5亥發光活性結構包含至 η型氮化鎵層。 118170-990622.doc 40. 41. 42. 43. 44. 如明求項3 7之發光二極體，其中該等臺面側壁及該等表 面& aa形體係沿著氮化鎵之（/zh7)晶體平面。 如請求項37之發光二極體，其中該等臺面側壁係沿著六 方晶係氮化鎵之{1 〇-11 }晶體平面族。 如凊求項37之複數個發光二極體，其形成於一共同晶圓 上0 如哨求項37之發光二極體’其包含一至該支撐結構之電 阻接觸及一至該活性結構之電阻接觸。 如清求項3 7之發光二極聽，甘山 ^ Μ ^ Λ ”中該等側壁相對於該支撐 、，、》構形成一在約58與62度之間的角度。 118170-990622.doc 6·
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