JP2009525596A - 結晶ファセット形成表面に基づく改良型外部抽出発光ダイオード - Google Patents
結晶ファセット形成表面に基づく改良型外部抽出発光ダイオード Download PDFInfo
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- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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Abstract
Description
Claims (58)
- III族窒化物発光活性構造のメサを含み、
該メサは、該III族窒化物の指数結晶面に沿ってその側壁を有する、発光ダイオード。 - 前記ダイオードの発光面は、前記活性構造のIII族窒化物表面である、請求項1に記載の発光ダイオード。
- 前記メサの支持構造をさらに含み、該支持構造は、金属、半導体基板、およびサブマウント構造から成る群から選択される、請求項1に記載の発光ダイオード。
- 前記発光活性構造は、少なくとも1つのp型窒化ガリウム層および少なくとも1つのn型窒化ガリウム層を含む、請求項1に記載の発光ダイオード。
- 前記窒化ガリウム層は、前記メサの前記指数結晶面の端で終端する、請求項4に記載の発光ダイオード。
- 前記メサ側壁は、窒化ガリウムの(hkil)結晶面に沿っている、請求項1に記載の発光ダイオード。
- 前記メサ側壁は、六方晶窒化ガリウムの{10―11}族結晶面に沿っている、請求項1に記載の発光ダイオード。
- 前記発光活性構造と前記支持構造との間に鏡をさらに含む、請求項1に記載の発光ダイオード。
- 共通のウエハ上にある、請求項1に記載の複数の発光ダイオード。
- 前記III族窒化物の指数面を示す複数の結晶学的特徴から形成される粗面をさらに含む、請求項1に記載の発光ダイオード。
- 前記粗面の前記指数面は、前記メサ側壁の指数面と一致する、請求項10に記載の発光ダイオード。
- 前記支持構造とのオーム接触および前記活性構造とのオーム接触を含む、請求項1に記載の発光ダイオード。
- 前記粗面とのオーム接触を含む、請求項10に記載の発光ダイオード。
- 前記側壁は、前記支持構造に対して約58度〜62度の角度を形成する、請求項1に記載の発光ダイオード。
- 前記メサは、2つの側壁部分を有し、第1の主要部分は前記指数面に沿っており、第2の主要部分は該第1部分に対して鈍角を成す、請求項1に記載の発光ダイオード。
- 改良された光抽出を有する発光ダイオードを形成する方法であって、
III族窒化物層の表面を異方性エッチングして該III族窒化物表面上に結晶ファセットを形成することを含み、該ファセットは、該III族窒化物の指数面に沿っている、方法。 - 前記異方性エッチングに先立って、前記基板の反対側にあるIII族窒化物発光構造上にサブマウント構造を含む該III族窒化物発光構造から基板を除去することを含む、請求項16に記載の方法。
- 異方性エッチングによって前記発光構造をエッチングして前記III族窒化物の指数面に沿って端を有するメサを形成することを含む、請求項16に記載の方法。
- 前記メサを最初にエッチングし、その後に、前記III族窒化物表面をエッチングして個別のファセット特性のない指数メサ側壁を形成することを含む、請求項18に記載の方法。
- 前記III族窒化表面を最初にエッチングし、その後に、前記メサ側壁をエッチングして複数の個別の指数面ファセットを含む指数面メサ側壁を形成することを含む、請求項18に記載の方法。
- 共通のウエハ上に複数のメサを形成することを含む、請求項18に記載の方法。
- 前記異方性エッチングによって互いに分離される前記ウエハ上の装置間に個別の接合を有する前記メサを形成し、それにより、前記発光活性構造を形成する前記層が該メサの残りの部分と同一の指数端で終端することを含む、請求項21に記載の方法。
- III族窒化物の発光メサ構造から炭化ケイ素基板を除去し、その後に、該メサ構造をエッチングして、該III族窒化物の指数面に沿う結晶ファセットであるメサ側壁を形成することを含む、請求項16に記載の方法。
- 前記メサ側壁と同一の指数面に沿って該メサ側壁を形成することを含む、請求項23に記載の方法。
- 窒化ガリウム発光構造から前記基板を除去することを含む、請求項16に記載の方法。
- 水酸化カリウム、水酸化ナトリウム、ヘキサシアノ鉄酸カリウム、およびそれらの組み合わせから成る群から選択されるエッチング液を用いて、前記III族窒化物表面をエッチングすることを含む、請求項16に記載の方法。
- 水酸化カリウム、水酸化ナトリウム、ヘキサシアノ鉄酸カリウム、およびそれらの組み合わせから成る群から選択されるエッチング液を用いて、前記メサをエッチングすることを含む、請求項18に記載の方法。
- 前記メサ側壁の少なくとも一部をドライエッチングすることをさらに含む、請求項16に記載の方法。
- 前記側壁を異方性エッチングする前に、前記メサ側壁をドライエッチングすることを含む、請求項28に記載の方法。
- 前記側壁を異方性エッチングした後に、前記メサ側壁をドライエッチングすることを含む、請求項28に記載の方法。
- 向上された光抽出特性を有する発光ダイオードであって、
サブマウント構造と、
該サブマウント構造上にあり、印加電圧下でキャリアを再結合およびフォトンを放射するためのp―n接合を形成する、少なくとも1つのn型および1つのp型のIII族窒化物層であって、
該III族窒化物層は、該サブマウント構造上にメサを形成し、そこにおいて該メサの側壁が該III族窒化物の指数面によって画定され、
該ダイオードは、該III族窒化物層の1つで終端し、該終端のIII族窒化物層は、該ダイオードの発光面を形成しており、
該発光面は、該III族窒化物の指数面を示す複数の結晶構造で形成されている、
少なくとも1つのn型および1つのp型のIII族窒化物層と、
該発光面とのオーム接触と、
該サブマウント構造とのオーム接触と
を含む、発光ダイオード。 - 前記メサ内の前記III族窒化物層を電気的に絶縁し、かつ環境的に保護するために、前記メサ側壁上、および前記サブマウント構造の上部に保護層をさらに含む、請求項31に記載の発光ダイオード。
- 前記保護層は、二酸化ケイ素、化学量論の窒化シリコン、非化学量論の窒化シリコン、およびそれらの組み合わせから成る群から選択される、請求項32に記載の発光ダイオード。
- 前記サブマウント構造は、前記III族窒化物層を前記サブマウント構造に結合し、該サブマウント構造から前記III族窒化物層へのドーパントまたはその他の材料の不要な移行を防ぐ、複数の金属および半導体の層を含む、請求項31に記載の発光ダイオード。
- 前記ダイオードからの前記光抽出を向上させるために、前記サブマウント構造と前記III族窒化物層との間に鏡層をさらに含む、請求項31に記載の発光ダイオード。
- 前記III族窒化物層は、窒化ガリウム、アルミニウム窒化ガリウム、およびアルミニウムインジウム窒化ガリウムから成る群から選択される、請求項31に記載の発光ダイオード。
- 化学的に発現した側壁を有するIII族窒化物発光活性構造のメサを含む、発光ダイオード。
- 前記ダイオードの前記発光面は、前記活性構造のIII族窒化物表面である、請求項37に記載の発光ダイオード。
- 前記メサの支持構造をさらに含み、前記支持構造は、金属、半導体基板、およびサブマウント構造から成る群から選択される、請求項37に記載の発光ダイオード。
- 前記発光活性構造は、少なくとも1つのp型窒化ガリウム層および少なくとも1つのn型窒化ガリウム層を含む、請求項37に記載の発光ダイオード。
- 前記窒化ガリウム層は、前記メサの前記指数結晶面端で終端する、請求項40に記載の発光ダイオード。
- 前記メサ側壁は、窒化ガリウムの(hkil)結晶面に沿っている、請求項37に記載の発光ダイオード。
- 前記メサ側壁は、六方晶窒化ガリウムの{10―11}族結晶面に沿っている、請求項37に記載の発光ダイオード。
- 前記発光活性構造と前記支持構造との間に鏡をさらに含む、請求項37に記載の発光ダイオード。
- 共通のウエハ上にある、請求項33に記載の複数の発光ダイオード。
- 前記III族窒化物の指数面を示す複数の結晶学的特徴から形成される粗面をさらに含む、請求項37に記載の発光ダイオード。
- 前記粗面の前記指数面は、前記メサ側壁の指数面と一致する、請求項46に記載の発光ダイオード。
- 前記支持構造とのオーム接触および前記活性構造とのオーム接触を含む、請求項37に記載の発光ダイオード。
- 前記粗面とのオーム接触を含む、請求項46に記載の発光ダイオード。
- 前記側壁は、前記支持構造に対して約58度〜62度の角度を形成する、請求項37に記載の発光ダイオード。
- III族窒化物発光活性構造のメサと、
複数の結晶学的特徴から形成される該メサ上の発光面と、
該結晶学的特徴と幾何学的に一致する側壁を該発光面上に有するメサと
を含む、発光ダイオード。 - 前記メサの支持構造、および金属、半導体基板、およびサブマウント構造から成る群から選択される前記支持構造をさらに含む、請求項51に記載の発光ダイオード。
- 前記発光活性構造は、少なくとも1つのp型窒化ガリウム層および少なくとも1つのn型窒化ガリウム層を含む、請求項51に記載の発光ダイオード。
- 前記メサ側壁および前記表面結晶学的特徴は、窒化ガリウムの(hkil)結晶面に沿う、請求項51に記載の発光ダイオード。
- 前記メサ側壁は、六方晶窒化ガリウムの前記{10―11}族結晶面に沿っている、請求項51に記載の発光ダイオード。
- 共通のウエハ上にある、請求項51に記載の複数の発光ダイオード。
- 前記支持構造とのオーム接触および前記活性構造とのオーム接触を含む、請求項51に記載の発光ダイオード。
- 前記側壁は、前記支持構造に対して約58度〜62度の角度を形成する、請求項51に記載の発光ダイオード。
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US11/343,180 US7791061B2 (en) | 2004-05-18 | 2006-01-30 | External extraction light emitting diode based upon crystallographic faceted surfaces |
PCT/US2007/001531 WO2007089460A1 (en) | 2006-01-30 | 2007-01-19 | Improved external extraction light emitting diode based upon crystallographic faceted surfaces |
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EP1983581A3 (en) | 2008-10-29 |
TW200742130A (en) | 2007-11-01 |
EP2362446A1 (en) | 2011-08-31 |
US8357923B2 (en) | 2013-01-22 |
US7791061B2 (en) | 2010-09-07 |
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