TWI456893B - 具有電壓調節器電路及負壓電源產生器電路之單晶積體電路及低雜訊放大器 - Google Patents

具有電壓調節器電路及負壓電源產生器電路之單晶積體電路及低雜訊放大器 Download PDF

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TWI456893B
TWI456893B TW095140179A TW95140179A TWI456893B TW I456893 B TWI456893 B TW I456893B TW 095140179 A TW095140179 A TW 095140179A TW 95140179 A TW95140179 A TW 95140179A TW I456893 B TWI456893 B TW I456893B
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field effect
effect transistor
circuit
voltage
component
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TW095140179A
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TW200723675A (en
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David Bradbury
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Diodes Taiwan Inc
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216—Continuous control
    • H03F1/0233—Continuous control by using a signal derived from the output signal, e.g. bootstrapping the voltage supply
    • H03F1/0238—Continuous control by using a signal derived from the output signal, e.g. bootstrapping the voltage supply using supply converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H04B1/1607—Supply circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N21/00—Selective content distribution, e.g. interactive television or video on demand [VOD]
    • H04N21/40—Client devices specifically adapted for the reception of or interaction with content, e.g. set-top-box [STB]; Operations thereof
    • H04N21/41—Structure of client; Structure of client peripherals
    • H04N21/426—Internal components of the client ; Characteristics thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N7/00—Television systems
    • H04N7/20—Adaptations for transmission via a GHz frequency band, e.g. via satellite
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7206—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch in the bias circuit of the amplifier controlling a bias voltage in the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7209—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched from a first band to a second band

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Multimedia (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Astronomy & Astrophysics (AREA)
  • General Physics & Mathematics (AREA)
  • Amplifiers (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Power Conversion In General (AREA)

Claims (12)

  1. 一種含一電壓調節器電路及一負壓電源產生器電路之單晶積體電路(monolithic IC)，其包含：一電源輸入，以接收一電信號；及一場效電晶體(FET)控制電路，以控制複數個場效電晶體；該電壓調節器電路耦接至該電源輸入並基於該電信號產生一受調節之電壓；該負壓電源產生器電路基於該受調節之電壓產生一負供應電壓，並提供該負供應電壓至該場效電晶體控制電路；一場效電晶體選擇電路耦接至該電源輸入，並基於該電信號之一直流(DC)成分之準位提供一場效電晶體選擇信號至該場效電晶體控制電路以去能一選定之場效電晶體；及一交流(AC)信號檢測電路，以檢測該電信號之一交流成分並根據已檢測之交流成分來提供一交流成分檢測信號。
  2. 如請求項1之積體電路，其中該場效電晶體控制電路進一步藉由施加一電壓至該選定之場效電晶體之閘極以切斷流過該選定之場效電晶體之電流以去能該選定場效電晶體。
  3. 如請求項1之積體電路，其中該場效電晶體控制電路進一步藉由去能該選定場效電晶體之汲極電壓 及施加一電壓至該選定場效電晶體之閘極以驅動該選定場效電晶體進入一低電阻狀態來去能該選定場效電晶體。
  4. 如請求項1之積體電路，其進一步包含：一局部振盪器(LO)控制電路，以耦接該交流成分檢測信號，並基於該交流成分檢測信號以選擇具有不同頻率之兩個局部振盪器之一者。
  5. 如請求項1之積體電路，其進一步包含：一濾波構件、一準位選擇構件與一調變檢測構件，用以過濾來自該電信號之不要的頻帶或雜訊。
  6. 如請求項1之積體電路，其中該電壓調節器電路提供該受調節之電壓至該積體電路之外部裝置，且該負壓電源產生器電路提供該負供應電壓至該積體電路之外部裝置。
  7. 一種低雜訊放大器，其包含：複數個場效電晶體；及一整合有一電壓調節器電路及一負壓電源產生器電路之單晶積體電路，其中該積體電路包含：一電源輸入，以接收一電信號；及一場效電晶體控制電路，以控制該複數個場效電晶體；該電壓調節器電路耦接至該電源輸入並基於該電信號產生一受調節之電壓；該負壓電源產生器電路，以基於該受調節之電壓 產生一負供應電壓，並提供該負供應電壓至該場效電晶體控制電路一場效電晶體選擇電路耦接至該電源輸入，並基於該電信號之一直流成分之準位提供一場效電晶體選擇信號至該場效電晶體控制電路以去能一選定場效電晶體；及一交流信號檢測電路，以檢測該電信號之一交流成分並根據已檢測之交流成分來提供一交流成分檢測信號。
  8. 如請求項7之低雜訊放大器，其中該場效電晶體控制電路進一步藉由施加一電壓至該選定場效電晶體之閘極以切斷流過該選定場效電晶體之電流來去能該選定場效電晶體。
  9. 如請求項7之低雜訊放大器，其中該場效電晶體控制電路進一步藉由去能該選定場效電晶體之汲極電壓及施加一電壓至該選定場效電晶體之閘極以驅動該選定場效電晶體進入一低電阻狀態來去能該選定場效電晶體
  10. 如請求項7之低雜訊放大器，其進一步包含：兩個局部振盪器；及一局部振盪器(LO)控制電路，以耦接該交流成分檢測信號，並基於該交流成分檢測信號以選擇具有不同頻率之兩個局部振盪器之一者。
  11. 如請求項7之低雜訊放大器，其進一步包含： 一濾波構件、一準位選擇構件與一調變檢測構件，用以過濾來自該電信號之不要的頻帶或雜訊。
  12. 如請求項7之低雜訊放大器，其中該電壓調節器電路提供該受調節之電壓至該積體電路外部之該低雜訊放大器之裝置，且該負壓電源產生器電路提供該負供應電壓至該積體電路外部之低雜訊放大器之裝置。
TW095140179A 2005-11-01 2006-10-31 具有電壓調節器電路及負壓電源產生器電路之單晶積體電路及低雜訊放大器 TWI456893B (zh)

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GB0522172A GB2432471A (en) 2005-11-01 2005-11-01 A CMOS support IC for a DBS LNA

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TW095217094U TWM321656U (en) 2005-11-01 2006-09-25 Low noise amplifier (LNA) and monolithic support integrated circuit for the LNA
TW095140179A TWI456893B (zh) 2005-11-01 2006-10-31 具有電壓調節器電路及負壓電源產生器電路之單晶積體電路及低雜訊放大器

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US (1) US8494476B2 (zh)
EP (1) EP1949533A2 (zh)
JP (1) JP4958913B2 (zh)
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GB (1) GB2432471A (zh)
RU (1) RU2435292C2 (zh)
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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7928702B2 (en) * 2005-04-13 2011-04-19 International Rectifier Corporation Driving circuit for use with high voltage depletion-mode semiconductor switches
US9943380B2 (en) * 2007-03-14 2018-04-17 Orthoaccel Technologies, Inc. Vibrating orthodontic remodelling device
JP2010268296A (ja) * 2009-05-15 2010-11-25 Sharp Corp 衛星放送受信用コンバータｉｃ、衛星放送受信用コンバータ、および衛星放送受信用アンテナ
CN101895698B (zh) * 2010-06-29 2012-10-03 苏州华芯微电子股份有限公司 兼具偏置和极化选择功能的集成电路
CN104767948B (zh) * 2015-04-10 2017-12-01 无锡市晶源微电子有限公司 一种卫星接收高频头lnb偏置电路
JP6619274B2 (ja) * 2016-03-23 2019-12-11 エイブリック株式会社 ボルテージレギュレータ
CN111294001B (zh) * 2020-03-24 2023-01-24 中国科学院微电子研究所 一种轨对轨运算放大器
RU2766868C1 (ru) * 2021-09-08 2022-03-16 федеральное государственное бюджетное образовательное учреждение высшего образования "Донской государственный технический университет" (ДГТУ) Арсенид-галлиевый буферный усилитель
CN116707460B (zh) * 2023-03-14 2024-01-23 深圳市晶扬电子有限公司 一种音频功率放大器的保护电路

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6169449B1 (en) * 1998-07-03 2001-01-02 Nec Corporation Transmission power control circuit capable of varying electric power over a wide range
US6229732B1 (en) * 1998-09-03 2001-05-08 Macronix International Co., Ltd. Regulated voltage supply circuit for inducing tunneling current in floating gate memory devices
US6735424B1 (en) * 2000-06-14 2004-05-11 The Regents Of The University Of California S-band low-noise amplifier with self-adjusting bias for improved power consumption and dynamic range in a mobile environment

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0795657B2 (ja) * 1987-09-09 1995-10-11 日産自動車株式会社 保護機能内蔵型ｍｏｓｆｅｔ
JPH02103915U (zh) * 1989-02-01 1990-08-17
JPH0336243U (zh) 1989-08-22 1991-04-09
US5426641A (en) 1994-01-28 1995-06-20 Bell Communications Research, Inc. Adaptive class AB amplifier for TDMA wireless communications systems
JPH08307159A (ja) * 1995-04-27 1996-11-22 Sony Corp 高周波増幅回路、送信装置、及び受信装置
JPH09181534A (ja) * 1995-12-26 1997-07-11 Saitama Nippon Denki Kk 電力増幅器保護回路
JPH1093459A (ja) 1996-09-12 1998-04-10 Kenwood Corp アンテナブースタ付受信機
JPH11234900A (ja) * 1998-02-18 1999-08-27 Alps Electric Co Ltd 過電流遮断回路
JP3314724B2 (ja) 1998-06-02 2002-08-12 日本電気株式会社 電力増幅回路および電力自動制御方法
JP3653215B2 (ja) * 1999-10-01 2005-05-25 シャープ株式会社 衛星放送受信システム、ならびに衛星放送受信システムで用いられるローノイズブロックダウンコンバータおよび衛星放送受信機
JP2003124832A (ja) * 2001-07-26 2003-04-25 Sharp Corp 衛星放送受信用コンバータ及び衛星放送受信システム
JP2003087062A (ja) 2001-09-12 2003-03-20 Hitachi Ltd 半導体装置
CN2520568Y (zh) 2001-11-30 2002-11-13 肖幼萍 功率绝缘栅双极型和场效应型晶体管栅极隔离驱动模块
JP2003188653A (ja) 2001-12-20 2003-07-04 Hitachi Ltd 無線通信用電子部品および通信用半導体集積回路
JP2003204278A (ja) * 2002-01-07 2003-07-18 Sharp Corp 衛星放送受信用コンバータ
CN1141787C (zh) 2002-07-05 2004-03-10 清华大学 变增益的单端到差分的射频低噪声放大器
JP2004320418A (ja) * 2003-04-16 2004-11-11 Daihen Corp 高周波電源装置
JP2004312668A (ja) 2003-03-25 2004-11-04 Sharp Corp 低雑音コンバータ
JP2005020518A (ja) * 2003-06-27 2005-01-20 Renesas Technology Corp 高周波電力増幅回路および高周波電力増幅用電子部品並びにその製造方法
US20050066367A1 (en) * 2003-09-19 2005-03-24 Fyke Gregory James Integrated receiver decoder for receiving digitally modulated signals from a satellite
AU2004306783A1 (en) 2003-10-10 2005-04-21 That Corporation Low-power integrated-circuit signal processor with wide dynamic range
JP2005175561A (ja) 2003-12-08 2005-06-30 Renesas Technology Corp 高周波電力増幅回路用電源回路および電源用半導体集積回路並びに電源用電子部品

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6169449B1 (en) * 1998-07-03 2001-01-02 Nec Corporation Transmission power control circuit capable of varying electric power over a wide range
US6229732B1 (en) * 1998-09-03 2001-05-08 Macronix International Co., Ltd. Regulated voltage supply circuit for inducing tunneling current in floating gate memory devices
US6735424B1 (en) * 2000-06-14 2004-05-11 The Regents Of The University Of California S-band low-noise amplifier with self-adjusting bias for improved power consumption and dynamic range in a mobile environment

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
1998年10月31日公開文獻 "FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION ZNBG3113& ZNBG3114" www.diodes.com/datasheets/ZNBG3113.pdf 2005年10月19日公開文獻 " AT1512 - FET BIAS CONTROLLER AND TONE DETECTION – Aimtron Technology" http://pdf1.alldatasheet.com/datasheet-pdf/view/162672/AIMTRON/AT1512.html *
年10月31日公開文獻 "FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION Z&Z" www.diodes.com/datasheets/Z.pdf 2005年10月19日公開文獻 " - FET BIAS CONTROLLER AND TONE DETECTION – Aimtron Technology" http://pdf1.alldatasheet.com/datasheet-pdf/view/162672/AIMTRON/.html *

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GB0522172D0 (en) 2005-12-07
GB2432471A (en) 2007-05-23
US8494476B2 (en) 2013-07-23
CN101366172A (zh) 2009-02-11
CN201107848Y (zh) 2008-08-27
WO2007052002A1 (en) 2007-05-10
JP2009514473A (ja) 2009-04-02
EP1949533A2 (en) 2008-07-30
JP4958913B2 (ja) 2012-06-20
US20080284516A1 (en) 2008-11-20
WO2007052002A9 (en) 2008-02-14
CN101366172B (zh) 2015-04-29
TWM321656U (en) 2007-11-01
RU2008117026A (ru) 2009-12-10
RU2435292C2 (ru) 2011-11-27
TW200723675A (en) 2007-06-16

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