TWI456711B - 具有增強散熱特性之半導體封裝結構 - Google Patents

具有增強散熱特性之半導體封裝結構 Download PDF

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Publication number
TWI456711B
TWI456711B TW094137202A TW94137202A TWI456711B TW I456711 B TWI456711 B TW I456711B TW 094137202 A TW094137202 A TW 094137202A TW 94137202 A TW94137202 A TW 94137202A TW I456711 B TWI456711 B TW I456711B
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Taiwan
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package
heat dissipation
attachment structure
electrode
electronic
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TW094137202A
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English (en)
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TW200633165A (en
Inventor
Francis J Carney
Michael J Seddon
Dluong Ngan Leong
Yeu Wen Lee
Kent L Kime
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Semiconductor Components Ind
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Publication of TW200633165A publication Critical patent/TW200633165A/zh
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Publication of TWI456711B publication Critical patent/TWI456711B/zh

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Claims (32)

  1. 一種半導體封裝，其包含：一在一第一表面上具有一載流電極的電子晶片；一附著於該載流電極的導電附接結構；及一散熱層，其附著於該導電附接結構且覆蓋該載流電極之一實質部分，其中該導電附接結構係介於該散熱層及該載流電極之間；及一封裝層，其覆蓋該電子晶片之一部分、該導電附接結構之一部分、及該散熱層之至少一部分。
  2. 如請求項1之封裝，其中該散熱層包含一柔性形狀。
  3. 如請求項2之封裝，其中該散熱層包含「u」形狀、線圈狀形狀、或橢圓形狀中的一項。
  4. 如請求項1之封裝，其中該封裝層覆蓋該散熱層。
  5. 如請求項1之封裝，其中該散熱層包含一導電網線。
  6. 如請求項1之封裝，其中該散熱層包含一帶狀黏接。
  7. 如請求項1之封裝，其中該散熱層包含複數個球狀形狀。
  8. 如請求項1之封裝，其中該導電附接結構包含一夾子，其中該夾子包含通過該封裝層而暴露的一末端，及其中該末端包含用於與一下一級裝配件連接的一形狀。
  9. 如請求項1之封裝，其進一步包含一具有一旗標部分及一襯墊部分的引線框架，其中該電子晶片係耦合至該旗標部分，及其中該導電附接結構係進一步耦合至該襯墊部分。
  10. 如請求項1之封裝，其進一步包含一耦合至該導電附接結構的第二電子組件。
  11. 如請求項10之封裝，其中該電子晶片包含一功率MOSFET，及其中該第二電子組件包含一Schottky二極體。
  12. 如請求項1之封裝，其中該散熱層包括一增強該封裝層黏著於該散熱層的形狀。
  13. 如請求項1之封裝，其進一步包含一形成於該封裝之上的導熱與電絕緣層。
  14. 如請求項1之封裝，其中該封裝層包含一具有一導熱率大於或等於約3.0 Watts/mK的材料。
  15. 如請求項1之封裝，其中該散熱層包含至少一線路黏接。
  16. 如請求項15之封裝，其中該線路黏接包含一球形黏接散熱層。
  17. 如請求項15之封裝，其中該線路黏接包含一楔形黏接散熱層。
  18. 一種具有增強散熱之無引線半導體封裝，其包含：一包括一終端部分的引線框架；一半導體裝置，其在一表面上具有一第一電極且在相對表面上具有一第二電極，其中該第一電極為一主要載流電極，相較於該第二電極，該第一電極產生更多的熱；一附接結構，其耦合至該第一電極及該終端部分； 一分開的導熱裝置，其實質覆蓋該第一電極之全部及耦合至該附接結構；及一鈍化層，其覆蓋該半導體裝置之至少一部分、該附接結構之至少一部分、及該導熱裝置之至少一部分。
  19. 如請求項18之封裝，其中該附接結構包含一夾子。
  20. 如請求項18之封裝，其中該導熱裝置包含一柔性形狀。
  21. 如請求項18之封裝，其中該導熱裝置包含以下項目中其中一項：一帶狀黏接、一線路黏接、具有一橋狀形狀之一夾子、一「u」形夾子、一橢圓形夾子、複數個球狀形狀、具有鰭狀部分之一散熱層、一導電網線、或一線圈狀散熱層。
  22. 如請求項18之封裝，其中該附接結構與該導熱裝置中其中一者包括一模製鎖特徵。
  23. 如請求項18之封裝，其中該導熱裝置包括以下項目中其中一項：一梳子狀形狀的部分、一具有一開口的部分、一鋸齒狀形狀的部分。
  24. 如請求項18之封裝，其中該鈍化層包含一具有一導熱率大於或等於約3.0 Watts/mK的材料。
  25. 如請求項18之封裝，其進一步包含一耦合至該導電附接結構的第二半導體晶片。
  26. 一種電子封裝，其包含：一具有一載流電極的半導體晶粒；一附接結構，其附著於該載流電極；一分開的散熱結構，其具有一柔性形狀且附著於該附 接結構及覆蓋該載流電極之一實質部分，其中該散熱結構覆蓋該半導體晶粒之一實質部分且延伸遠離該半導體晶片及該附接結構，及其中該散熱結構鄰接該封裝之一上表面；及一封裝層，其覆蓋該半導體晶粒之至少一部分及該附接結構及該散熱結構之至少一部分，及其中該散熱結構係內嵌於該封裝層。
  27. 如請求項26之電子封裝，其中該散熱結構包含一具有一U型形狀之柔性形狀。
  28. 如請求項26之電子封裝，其中該附接結構包含一夾子，及其中該夾子包含通過該封裝層而暴露的一末端，及其中該末端包含與一下一級裝配件連接的一形狀。
  29. 如請求項26之電子封裝，其進一步包含一具有一旗標部分及一襯墊部分的引線框架，其中該半導體晶粒係耦合至該旗標部分，及其中該附接結構的一端係耦合至該襯墊部分。
  30. 如請求項26之電子封裝，其中該半導體晶粒包含一功率MOSFET裝置。
  31. 如請求項26之電子封裝，其中該封裝層包含一具有一導熱率大於或等於約3.0 Watts/mK的材料。
  32. 如請求項26之電子封裝，其中曝露該散熱結構的一部分以增強散熱。
TW094137202A 2004-12-20 2005-10-24 具有增強散熱特性之半導體封裝結構 TWI456711B (zh)

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