TWI455924B - 聚合性三級酯化合物、高分子化合物、光阻材料及圖案形成方法 - Google Patents

聚合性三級酯化合物、高分子化合物、光阻材料及圖案形成方法 Download PDF

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TWI455924B
TWI455924B TW102102382A TW102102382A TWI455924B TW I455924 B TWI455924 B TW I455924B TW 102102382 A TW102102382 A TW 102102382A TW 102102382 A TW102102382 A TW 102102382A TW I455924 B TWI455924 B TW I455924B
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Yuki Suka
Jun Hatakeyama
Koji Hasegawa
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Shinetsu Chemical Co
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Claims (10)

  1. 一種聚合性三級酯化合物，係以下列通式(1a)或(1b)表示： (式中，R1 表示氫原子、氟原子、甲基、或三氟甲基；R2 與R3 各自獨立地表示碳數1~15之直鏈狀、分支狀、或環狀之1價烴基；或R2 與R3 也可彼此鍵結並與此等所鍵結之碳原子一起形成碳數3~8之非芳香環；Z表示與等所鍵結之碳原子一起形成取代或非取代之環丙烷環、環丁烷環、環戊烷環、環己烷環、或降莰烷環之2價基；Aa表示碳數1~10之直鏈狀、分支狀、或環狀之2價烴基；Ab表示碳數1~6之直鏈狀、分支狀、或環狀之2價烴基；Ac表示單鍵、或碳數1~10之直鏈狀、分支狀、或環狀之2價烴基；R4 表示氫原子、碳數1~15之直鏈狀、分支狀或環狀之1價烴基，且為1價烴基的情形，構成之-CH2 -也可取代為-O-或-C(=O)-；k1 為1)；其中，該通式(1a)中，R2 、R3 、Aa中之任1者以上具有環狀結構。
  2. 一種高分子化合物，其特徵為：含有下列通式(2a)及(2b)表示之重複單元中之任1種以上； (式中，R1 表示氫原子、氟原子、甲基、或三氟甲基；R2 與R3 各自獨立地表示碳數1~15之直鏈狀、分支狀或環狀之1價烴基；或R2 與R3 也可彼此鍵結並與此等所鍵結之碳原子一起形成碳數3~8之非芳香環；Z表示與等所鍵結之碳原子一起形成取代或非取代之環丙烷環、環丁烷環、環戊烷環、環己烷環、或降莰烷環之2價基；Aa表示碳數1~10之直鏈狀、分支狀或環狀之2價烴基；Ab表示碳數1~6之直鏈狀、分支狀、或環狀之2價烴基；Ac表示單鍵、或碳數1~10之直鏈狀、分支狀、或環狀之2價烴基；R4 表示氫原子、碳數1~15之直鏈狀、分支狀、或環狀之1價烴基，為1價烴基的情形，構成之-CH2 -也可取代為-O-或-C(=O)-；k1 為1)；其中，該通式(2a)中，R2 、R3 、Aa中之任一者以上具有環狀結構。
  3. 如申請專利範圍第2項之高分子化合物，更含有下列通式(3a)~(3d)表示之重複單元中之任1種以上； (式中，R1 與上述相同；XA表示酸不穩定基；XB、XC各自獨立地表示單 鍵、或碳數1~4之直鏈狀或分支狀之2價烴基；YA表示具有內酯、磺內酯(sultone)、羥基、羧基、酯、醚、羰基、醯胺、或氰基結構之取代基；ZA表示氫原子、或碳數1~15之氟烷基或碳數1~15之含氟醇之取代基；k1A 表示1~3之整數)。
  4. 如申請專利範圍第2項之高分子化合物，更含有下列通式(d1)~(d3)表示之重複單元中之任1種以上； (式中，R20 、R24 、R28 各自獨立地表示氫原子或甲基，R21 表示單鍵、伸苯基、-O-R33 -、或-C(=O)-Y-R33 -；Y表示氧原子或NH，R33 表示碳數1~6之直鏈狀、分支狀或環狀之伸烷基、伸烯基或伸苯基，且也可含有羰基(-CO-)、酯基(-COO-)、醚基(-O-)或羥基；R22 、R23 、R25 、R26 、R27 、R29 、R30 、R31 為相同或不同之碳數1~12之直鏈狀、分支狀或環狀之烷基，也可含有羰基、酯基或醚基，或表示碳數6~12之芳基、碳數7~20之芳烷基或苯硫基；Z0 表示單鍵、亞甲基、伸乙基、伸苯基、經氟化之伸苯基、-O-R32 -、或-C(=O)-Z1 -R32 -；Z1 表示氧原子或NH，R32 表示碳數1~6之直鏈狀、分支狀或環狀之伸烷基、伸烯基或伸苯基，也可含有羰基、酯基、醚基或羥基；M- 表示非親核性相對離子)。
  5. 一種光阻材料，其特徵為：含有如申請專利範圍第2至4項中任一項之高分子化合物作為基礎樹脂。
  6. 如申請專利範圍第5項之光阻材料，更含有有機溶劑及酸產生劑中之任一者以上。
  7. 一種圖案形成方法，其特徵為包含以下步驟：將如申請專利範圍第5或6項之光阻材料塗佈於基板上； 加熱處理後隔著光罩以高能射線或電子束進行曝光；及之後使用顯影液進行顯影。
  8. 如申請專利範圍第7項之圖案形成方法，其中，該顯影步驟中，係藉由使用有機溶劑之顯影液溶解該光阻塗佈膜之未曝光部以形成負型圖案。
  9. 如申請專利範圍第7或8項之圖案形成方法，其中，該曝光步驟中，係插入折射率1.0以上之高折射率液體於該光阻塗佈膜與投影透鏡之間而進行浸潤曝光。
  10. 如申請專利範圍第9項之圖案形成方法，其中，該浸潤曝光中，在該光阻塗佈膜之上更塗佈保護膜，並插入折射率1.0以上之高折射率液體於該保護膜與投影透鏡之間而進行浸潤曝光。
TW102102382A 2012-01-24 2013-01-22 聚合性三級酯化合物、高分子化合物、光阻材料及圖案形成方法 TWI455924B (zh)

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JP5904960B2 (ja) * 2013-03-12 2016-04-20 富士フイルム株式会社 レーザー彫刻用樹脂組成物、レーザー彫刻用フレキソ印刷版原版の製造方法、フレキソ印刷版原版、フレキソ印刷版の製版方法及びフレキソ印刷版
JP6140487B2 (ja) * 2013-03-14 2017-05-31 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
JP6249735B2 (ja) * 2013-06-05 2017-12-20 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
WO2015046021A1 (ja) * 2013-09-26 2015-04-02 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
WO2015115613A1 (ja) * 2014-01-31 2015-08-06 三菱瓦斯化学株式会社 （メタ）アクリレート化合物、（メタ）アクリル共重合体およびそれを含む感光性樹脂組成物
CN106796401B (zh) * 2014-09-30 2021-06-29 富士胶片株式会社 图案形成方法、上层膜形成用组合物、抗蚀剂图案及电子元件的制造方法
WO2016052365A1 (ja) * 2014-09-30 2016-04-07 富士フイルム株式会社 パターン形成方法、レジストパターン、及び、電子デバイスの製造方法
JP6349408B2 (ja) * 2014-09-30 2018-06-27 富士フイルム株式会社 パターン形成方法、レジストパターン、及び、電子デバイスの製造方法
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US20160130462A1 (en) * 2014-11-07 2016-05-12 Rohm And Haas Electronic Materials Llc Topcoat compositions and photolithographic methods
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KR20170116093A (ko) * 2015-03-13 2017-10-18 후지필름 가부시키가이샤 패턴 형성 방법, 레지스트 패턴, 전자 디바이스의 제조 방법, 및 전자 디바이스
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JP6485380B2 (ja) * 2016-02-10 2019-03-20 信越化学工業株式会社 単量体、高分子化合物、レジスト材料、及びパターン形成方法
KR20200078671A (ko) 2017-12-22 2020-07-01 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 레지스트막 구비 마스크 블랭크, 포토마스크의 제조 방법, 전자 디바이스의 제조 방법
WO2019189556A1 (ja) * 2018-03-30 2019-10-03 セントラル硝子株式会社 含フッ素単量体、含フッ素重合体、硬化性組成物およびパターンの製造方法
JP7058339B2 (ja) * 2018-09-13 2022-04-21 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
KR20210070376A (ko) 2018-11-02 2021-06-14 브레우어 사이언스, 인코포레이션 Pag-고정된 표면 상의 상향식 컨포멀 코팅 및 광패턴화

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050026074A1 (en) * 2003-07-25 2005-02-03 Fuji Photo Film Co., Ltd. Positive resist composition
US20070003867A1 (en) * 2005-06-15 2007-01-04 Shin-Etsu Chemical Co., Ltd. Resist protective coating material and patterning process
US20090036717A1 (en) * 2003-12-04 2009-02-05 International Business Machines Corporation Precursors to Fluoroalkanol-Containing Olefin Monomers, and Associated Methods of Synthesis and Use
US20090208886A1 (en) * 2008-02-14 2009-08-20 Shin-Etsu Chemical Co., Ltd. Double patterning process

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2881969B2 (ja) 1990-06-05 1999-04-12 富士通株式会社 放射線感光レジストとパターン形成方法
JP3297272B2 (ja) 1995-07-14 2002-07-02 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
KR100551653B1 (ko) 1997-08-18 2006-05-25 제이에스알 가부시끼가이샤 감방사선성수지조성물
JP3042618B2 (ja) 1998-07-03 2000-05-15 日本電気株式会社 ラクトン構造を有する（メタ）アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法
JP4131062B2 (ja) 1998-09-25 2008-08-13 信越化学工業株式会社 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法
US6312867B1 (en) 1998-11-02 2001-11-06 Shin-Etsu Chemical Co., Ltd. Ester compounds, polymers, resist compositions and patterning process
JP2000336121A (ja) 1998-11-02 2000-12-05 Shin Etsu Chem Co Ltd 新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法
JP3944669B2 (ja) 1999-05-19 2007-07-11 信越化学工業株式会社 エステル化合物
US6830866B2 (en) 2001-06-15 2004-12-14 Shi-Etsu Chemical Co., Ltd. Resist composition and patterning process
JP4013044B2 (ja) 2001-06-15 2007-11-28 信越化学工業株式会社 レジスト材料、及びパターン形成方法
JP4083399B2 (ja) 2001-07-24 2008-04-30 セントラル硝子株式会社 含フッ素重合性単量体およびそれを用いた高分子化合物
JP4410501B2 (ja) 2003-06-30 2010-02-03 セントラル硝子株式会社 α−置換アクリル酸ノルボルナニル類の製造方法
US7205443B2 (en) 2004-01-27 2007-04-17 Central Glass Company, Limited Processes for producing fluorine-containing 2,4-diols and their derivatives
JP4324569B2 (ja) 2004-01-27 2009-09-02 セントラル硝子株式会社 含フッ素２，４−ジオール類およびその誘導体の製造方法
JP4079893B2 (ja) * 2004-02-20 2008-04-23 セントラル硝子株式会社 含フッ素環状化合物、含フッ素高分子化合物、それを用いたレジスト材料及びパターン形成方法
JP4448782B2 (ja) * 2004-03-18 2010-04-14 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7906268B2 (en) 2004-03-18 2011-03-15 Fujifilm Corporation Positive resist composition for immersion exposure and pattern-forming method using the same
JP4912733B2 (ja) * 2006-02-17 2012-04-11 東京応化工業株式会社 液浸露光用レジスト組成物およびレジストパターン形成方法
US7781157B2 (en) * 2006-07-28 2010-08-24 International Business Machines Corporation Method for using compositions containing fluorocarbinols in lithographic processes
JP4849267B2 (ja) * 2006-10-17 2012-01-11 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
US7771914B2 (en) 2006-10-17 2010-08-10 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US7569326B2 (en) * 2006-10-27 2009-08-04 Shin-Etsu Chemical Co., Ltd. Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process
JP4554665B2 (ja) * 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
JP4355725B2 (ja) * 2006-12-25 2009-11-04 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP4475435B2 (ja) 2007-07-30 2010-06-09 信越化学工業株式会社 含フッ素単量体、含フッ素高分子化合物、レジスト材料及びパターン形成方法
JP5131461B2 (ja) * 2008-02-14 2013-01-30 信越化学工業株式会社 高分子化合物、レジスト材料、及びパターン形成方法
JP4569786B2 (ja) 2008-05-01 2010-10-27 信越化学工業株式会社 新規光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP4748331B2 (ja) * 2008-12-02 2011-08-17 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP2010176037A (ja) * 2009-01-30 2010-08-12 Jsr Corp 感放射線性樹脂組成物及びレジストパターン形成方法
JP5407941B2 (ja) * 2009-03-09 2014-02-05 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
JP5318697B2 (ja) * 2009-08-11 2013-10-16 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050026074A1 (en) * 2003-07-25 2005-02-03 Fuji Photo Film Co., Ltd. Positive resist composition
US20090036717A1 (en) * 2003-12-04 2009-02-05 International Business Machines Corporation Precursors to Fluoroalkanol-Containing Olefin Monomers, and Associated Methods of Synthesis and Use
US20070003867A1 (en) * 2005-06-15 2007-01-04 Shin-Etsu Chemical Co., Ltd. Resist protective coating material and patterning process
US20090208886A1 (en) * 2008-02-14 2009-08-20 Shin-Etsu Chemical Co., Ltd. Double patterning process

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