TWI448835B - 決定方法、曝光方法和儲存媒體 - Google Patents

決定方法、曝光方法和儲存媒體 Download PDF

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Publication number
TWI448835B
TWI448835B TW100130285A TW100130285A TWI448835B TW I448835 B TWI448835 B TW I448835B TW 100130285 A TW100130285 A TW 100130285A TW 100130285 A TW100130285 A TW 100130285A TW I448835 B TWI448835 B TW I448835B
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TW
Taiwan
Prior art keywords
image
pattern
mask
legend
optical system
Prior art date
Application number
TW100130285A
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English (en)
Chinese (zh)
Other versions
TW201216012A (en
Inventor
行田裕一
石井弘之
三上晃司
深川容三
Original Assignee
佳能股份有限公司
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Publication date
Application filed by 佳能股份有限公司 filed Critical 佳能股份有限公司
Publication of TW201216012A publication Critical patent/TW201216012A/zh
Application granted granted Critical
Publication of TWI448835B publication Critical patent/TWI448835B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW100130285A 2010-09-01 2011-08-24 決定方法、曝光方法和儲存媒體 TWI448835B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010196091A JP5513324B2 (ja) 2010-09-01 2010-09-01 決定方法、露光方法及びプログラム

Publications (2)

Publication Number Publication Date
TW201216012A TW201216012A (en) 2012-04-16
TWI448835B true TWI448835B (zh) 2014-08-11

Family

ID=45697338

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100130285A TWI448835B (zh) 2010-09-01 2011-08-24 決定方法、曝光方法和儲存媒體

Country Status (4)

Country Link
US (1) US8811714B2 (enExample)
JP (1) JP5513324B2 (enExample)
KR (1) KR101419581B1 (enExample)
TW (1) TWI448835B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5539140B2 (ja) * 2010-09-28 2014-07-02 キヤノン株式会社 決定方法、露光方法、プログラム及びコンピュータ
JP5627394B2 (ja) * 2010-10-29 2014-11-19 キヤノン株式会社 マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法
FR2985086B1 (fr) * 2011-12-27 2014-02-28 St Microelectronics Crolles 2 Procede et systeme d'elaboration d'un masque de photolithographie et d'une source lumineuse.
KR101970685B1 (ko) * 2012-08-09 2019-04-19 삼성전자 주식회사 패터닝 방법, 그 패터닝 방법을 이용한 반도체 소자 제조방법, 및 반도체 소자 제조장치
WO2014056512A1 (en) 2012-10-08 2014-04-17 Carl Zeiss Smt Gmbh Method of operating a microlithographic apparatus
JP6161276B2 (ja) * 2012-12-12 2017-07-12 キヤノン株式会社 測定装置、測定方法、及びプログラム
US8954898B2 (en) * 2013-03-15 2015-02-10 International Business Machines Corporation Source-mask optimization for a lithography process
KR102167646B1 (ko) 2014-04-01 2020-10-19 삼성전자주식회사 프레임 정보를 제공하는 전자 장치 및 방법
US10872418B2 (en) * 2016-10-11 2020-12-22 Kabushiki Kaisha Toshiba Edge detection device, an edge detection method, and an object holding device
CN119395949B (zh) * 2024-11-15 2026-02-03 深圳晶源信息技术有限公司 一种光源确定方法、设备、介质及产品

Citations (3)

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JP2002261004A (ja) * 2001-01-29 2002-09-13 Internatl Business Mach Corp <Ibm> 照明及びレチクルの最適化により、印刷ラインの形状歪みを最小化するシステム及び方法
JP3342631B2 (ja) * 1995-06-06 2002-11-11 インターナショナル・ビジネス・マシーンズ・コーポレーション 照明を最適化する方法および投影結像装置
JP4378266B2 (ja) * 2003-12-04 2009-12-02 インターナショナル・ビジネス・マシーンズ・コーポレーション 照明源分布の調節による可能な最大プロセス・ウィンドウを用いたマスクの投影

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US7030966B2 (en) * 2003-02-11 2006-04-18 Asml Netherlands B.V. Lithographic apparatus and method for optimizing an illumination source using photolithographic simulations
EP1719019A2 (en) * 2004-02-03 2006-11-08 Mentor Graphics Corporation Source optimization for image fidelity and throughput
JP2009071125A (ja) * 2007-09-14 2009-04-02 Canon Inc 露光条件を決定する方法及びプログラム
DE102008011501A1 (de) * 2008-02-25 2009-08-27 Carl Zeiss Smt Ag Verfahren zum Betreiben eines Beleuchtungssystems einer mikrolithographischen Projektionsbelichtungsanlage
JP5153492B2 (ja) * 2008-07-11 2013-02-27 キヤノン株式会社 露光条件決定方法およびコンピュータプログラム
US8605254B2 (en) * 2009-10-26 2013-12-10 International Business Machines Corporation Constrained optimization of lithographic source intensities under contingent requirements
JP5513325B2 (ja) * 2010-09-01 2014-06-04 キヤノン株式会社 決定方法、露光方法及びプログラム

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JP3342631B2 (ja) * 1995-06-06 2002-11-11 インターナショナル・ビジネス・マシーンズ・コーポレーション 照明を最適化する方法および投影結像装置
JP2002261004A (ja) * 2001-01-29 2002-09-13 Internatl Business Mach Corp <Ibm> 照明及びレチクルの最適化により、印刷ラインの形状歪みを最小化するシステム及び方法
JP4378266B2 (ja) * 2003-12-04 2009-12-02 インターナショナル・ビジネス・マシーンズ・コーポレーション 照明源分布の調節による可能な最大プロセス・ウィンドウを用いたマスクの投影

Non-Patent Citations (1)

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Title
Matsuyama et al., "A Study of Source & Mask Optimization for ArF Scanners", Optical Microlithography XXII, Proceedings of SPIE, Volume 7274, 2009, pages 727408-1 to 727408-8. *

Also Published As

Publication number Publication date
KR20120024451A (ko) 2012-03-14
US8811714B2 (en) 2014-08-19
KR101419581B1 (ko) 2014-07-14
TW201216012A (en) 2012-04-16
JP2012054425A (ja) 2012-03-15
US20120051622A1 (en) 2012-03-01
JP5513324B2 (ja) 2014-06-04

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