JP5513324B2 - 決定方法、露光方法及びプログラム - Google Patents

決定方法、露光方法及びプログラム Download PDF

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Publication number
JP5513324B2
JP5513324B2 JP2010196091A JP2010196091A JP5513324B2 JP 5513324 B2 JP5513324 B2 JP 5513324B2 JP 2010196091 A JP2010196091 A JP 2010196091A JP 2010196091 A JP2010196091 A JP 2010196091A JP 5513324 B2 JP5513324 B2 JP 5513324B2
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JP
Japan
Prior art keywords
pattern
image
mask
light source
intensity distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010196091A
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English (en)
Japanese (ja)
Other versions
JP2012054425A5 (enExample
JP2012054425A (ja
Inventor
裕一 行田
弘之 石井
晃司 三上
容三 深川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2010196091A priority Critical patent/JP5513324B2/ja
Priority to KR1020110084474A priority patent/KR101419581B1/ko
Priority to TW100130285A priority patent/TWI448835B/zh
Priority to US13/217,558 priority patent/US8811714B2/en
Publication of JP2012054425A publication Critical patent/JP2012054425A/ja
Publication of JP2012054425A5 publication Critical patent/JP2012054425A5/ja
Application granted granted Critical
Publication of JP5513324B2 publication Critical patent/JP5513324B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
JP2010196091A 2010-09-01 2010-09-01 決定方法、露光方法及びプログラム Expired - Fee Related JP5513324B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010196091A JP5513324B2 (ja) 2010-09-01 2010-09-01 決定方法、露光方法及びプログラム
KR1020110084474A KR101419581B1 (ko) 2010-09-01 2011-08-24 결정 방법, 노광 방법 및 기억 매체
TW100130285A TWI448835B (zh) 2010-09-01 2011-08-24 決定方法、曝光方法和儲存媒體
US13/217,558 US8811714B2 (en) 2010-09-01 2011-08-25 Method, apparatus and medium for determining the intensity distribution formed on a pupil plane of an illumination optical system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010196091A JP5513324B2 (ja) 2010-09-01 2010-09-01 決定方法、露光方法及びプログラム

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014055600A Division JP5681309B2 (ja) 2014-03-18 2014-03-18 決定方法、露光方法及びプログラム

Publications (3)

Publication Number Publication Date
JP2012054425A JP2012054425A (ja) 2012-03-15
JP2012054425A5 JP2012054425A5 (enExample) 2013-10-17
JP5513324B2 true JP5513324B2 (ja) 2014-06-04

Family

ID=45697338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010196091A Expired - Fee Related JP5513324B2 (ja) 2010-09-01 2010-09-01 決定方法、露光方法及びプログラム

Country Status (4)

Country Link
US (1) US8811714B2 (enExample)
JP (1) JP5513324B2 (enExample)
KR (1) KR101419581B1 (enExample)
TW (1) TWI448835B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5539140B2 (ja) * 2010-09-28 2014-07-02 キヤノン株式会社 決定方法、露光方法、プログラム及びコンピュータ
JP5627394B2 (ja) * 2010-10-29 2014-11-19 キヤノン株式会社 マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法
FR2985086B1 (fr) * 2011-12-27 2014-02-28 St Microelectronics Crolles 2 Procede et systeme d'elaboration d'un masque de photolithographie et d'une source lumineuse.
KR101970685B1 (ko) * 2012-08-09 2019-04-19 삼성전자 주식회사 패터닝 방법, 그 패터닝 방법을 이용한 반도체 소자 제조방법, 및 반도체 소자 제조장치
JP6137762B2 (ja) 2012-10-08 2017-05-31 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ装置を作動させる方法
JP6161276B2 (ja) * 2012-12-12 2017-07-12 キヤノン株式会社 測定装置、測定方法、及びプログラム
US8954898B2 (en) * 2013-03-15 2015-02-10 International Business Machines Corporation Source-mask optimization for a lithography process
KR102167646B1 (ko) 2014-04-01 2020-10-19 삼성전자주식회사 프레임 정보를 제공하는 전자 장치 및 방법
US10872418B2 (en) * 2016-10-11 2020-12-22 Kabushiki Kaisha Toshiba Edge detection device, an edge detection method, and an object holding device
CN119395949A (zh) * 2024-11-15 2025-02-07 深圳晶源信息技术有限公司 一种光源确定方法、设备、介质及产品

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5680588A (en) * 1995-06-06 1997-10-21 International Business Machines Corporation Method and system for optimizing illumination in an optical photolithography projection imaging system
US6563566B2 (en) * 2001-01-29 2003-05-13 International Business Machines Corporation System and method for printing semiconductor patterns using an optimized illumination and reticle
US7030966B2 (en) * 2003-02-11 2006-04-18 Asml Netherlands B.V. Lithographic apparatus and method for optimizing an illumination source using photolithographic simulations
US7057709B2 (en) * 2003-12-04 2006-06-06 International Business Machines Corporation Printing a mask with maximum possible process window through adjustment of the source distribution
US7245354B2 (en) * 2004-02-03 2007-07-17 Yuri Granik Source optimization for image fidelity and throughput
JP2009071125A (ja) * 2007-09-14 2009-04-02 Canon Inc 露光条件を決定する方法及びプログラム
DE102008011501A1 (de) * 2008-02-25 2009-08-27 Carl Zeiss Smt Ag Verfahren zum Betreiben eines Beleuchtungssystems einer mikrolithographischen Projektionsbelichtungsanlage
JP5153492B2 (ja) * 2008-07-11 2013-02-27 キヤノン株式会社 露光条件決定方法およびコンピュータプログラム
US8605254B2 (en) * 2009-10-26 2013-12-10 International Business Machines Corporation Constrained optimization of lithographic source intensities under contingent requirements
JP5513325B2 (ja) * 2010-09-01 2014-06-04 キヤノン株式会社 決定方法、露光方法及びプログラム

Also Published As

Publication number Publication date
TWI448835B (zh) 2014-08-11
US8811714B2 (en) 2014-08-19
TW201216012A (en) 2012-04-16
US20120051622A1 (en) 2012-03-01
KR20120024451A (ko) 2012-03-14
KR101419581B1 (ko) 2014-07-14
JP2012054425A (ja) 2012-03-15

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