KR101419581B1 - 결정 방법, 노광 방법 및 기억 매체 - Google Patents

결정 방법, 노광 방법 및 기억 매체 Download PDF

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Publication number
KR101419581B1
KR101419581B1 KR1020110084474A KR20110084474A KR101419581B1 KR 101419581 B1 KR101419581 B1 KR 101419581B1 KR 1020110084474 A KR1020110084474 A KR 1020110084474A KR 20110084474 A KR20110084474 A KR 20110084474A KR 101419581 B1 KR101419581 B1 KR 101419581B1
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KR
South Korea
Prior art keywords
pattern
image
mask
optical system
light source
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Expired - Fee Related
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KR1020110084474A
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English (en)
Korean (ko)
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KR20120024451A (ko
Inventor
유이찌 교다
히로유끼 이시이
고지 미까미
요오조오 후까가와
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캐논 가부시끼가이샤
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Publication of KR20120024451A publication Critical patent/KR20120024451A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
KR1020110084474A 2010-09-01 2011-08-24 결정 방법, 노광 방법 및 기억 매체 Expired - Fee Related KR101419581B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010196091A JP5513324B2 (ja) 2010-09-01 2010-09-01 決定方法、露光方法及びプログラム
JPJP-P-2010-196091 2010-09-01

Publications (2)

Publication Number Publication Date
KR20120024451A KR20120024451A (ko) 2012-03-14
KR101419581B1 true KR101419581B1 (ko) 2014-07-14

Family

ID=45697338

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110084474A Expired - Fee Related KR101419581B1 (ko) 2010-09-01 2011-08-24 결정 방법, 노광 방법 및 기억 매체

Country Status (4)

Country Link
US (1) US8811714B2 (enExample)
JP (1) JP5513324B2 (enExample)
KR (1) KR101419581B1 (enExample)
TW (1) TWI448835B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5539140B2 (ja) * 2010-09-28 2014-07-02 キヤノン株式会社 決定方法、露光方法、プログラム及びコンピュータ
JP5627394B2 (ja) * 2010-10-29 2014-11-19 キヤノン株式会社 マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法
FR2985086B1 (fr) * 2011-12-27 2014-02-28 St Microelectronics Crolles 2 Procede et systeme d'elaboration d'un masque de photolithographie et d'une source lumineuse.
KR101970685B1 (ko) 2012-08-09 2019-04-19 삼성전자 주식회사 패터닝 방법, 그 패터닝 방법을 이용한 반도체 소자 제조방법, 및 반도체 소자 제조장치
JP6137762B2 (ja) * 2012-10-08 2017-05-31 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ装置を作動させる方法
JP6161276B2 (ja) * 2012-12-12 2017-07-12 キヤノン株式会社 測定装置、測定方法、及びプログラム
US8954898B2 (en) * 2013-03-15 2015-02-10 International Business Machines Corporation Source-mask optimization for a lithography process
KR102167646B1 (ko) 2014-04-01 2020-10-19 삼성전자주식회사 프레임 정보를 제공하는 전자 장치 및 방법
US10872418B2 (en) * 2016-10-11 2020-12-22 Kabushiki Kaisha Toshiba Edge detection device, an edge detection method, and an object holding device
CN119395949A (zh) * 2024-11-15 2025-02-07 深圳晶源信息技术有限公司 一种光源确定方法、设备、介质及产品

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009071125A (ja) * 2007-09-14 2009-04-02 Canon Inc 露光条件を決定する方法及びプログラム

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5680588A (en) * 1995-06-06 1997-10-21 International Business Machines Corporation Method and system for optimizing illumination in an optical photolithography projection imaging system
US6563566B2 (en) * 2001-01-29 2003-05-13 International Business Machines Corporation System and method for printing semiconductor patterns using an optimized illumination and reticle
US7030966B2 (en) * 2003-02-11 2006-04-18 Asml Netherlands B.V. Lithographic apparatus and method for optimizing an illumination source using photolithographic simulations
US7057709B2 (en) * 2003-12-04 2006-06-06 International Business Machines Corporation Printing a mask with maximum possible process window through adjustment of the source distribution
JP2007520892A (ja) * 2004-02-03 2007-07-26 メンター・グラフィクス・コーポレーション イメージの忠実度およびスループットに対する光源の最適化
DE102008011501A1 (de) * 2008-02-25 2009-08-27 Carl Zeiss Smt Ag Verfahren zum Betreiben eines Beleuchtungssystems einer mikrolithographischen Projektionsbelichtungsanlage
JP5153492B2 (ja) * 2008-07-11 2013-02-27 キヤノン株式会社 露光条件決定方法およびコンピュータプログラム
US8605254B2 (en) * 2009-10-26 2013-12-10 International Business Machines Corporation Constrained optimization of lithographic source intensities under contingent requirements
JP5513325B2 (ja) * 2010-09-01 2014-06-04 キヤノン株式会社 決定方法、露光方法及びプログラム

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009071125A (ja) * 2007-09-14 2009-04-02 Canon Inc 露光条件を決定する方法及びプログラム

Also Published As

Publication number Publication date
US8811714B2 (en) 2014-08-19
TW201216012A (en) 2012-04-16
JP5513324B2 (ja) 2014-06-04
TWI448835B (zh) 2014-08-11
US20120051622A1 (en) 2012-03-01
JP2012054425A (ja) 2012-03-15
KR20120024451A (ko) 2012-03-14

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