TWI445047B - A substrate processing apparatus, a substrate processing condition changing method, and a memory medium - Google Patents
A substrate processing apparatus, a substrate processing condition changing method, and a memory medium Download PDFInfo
- Publication number
- TWI445047B TWI445047B TW096106879A TW96106879A TWI445047B TW I445047 B TWI445047 B TW I445047B TW 096106879 A TW096106879 A TW 096106879A TW 96106879 A TW96106879 A TW 96106879A TW I445047 B TWI445047 B TW I445047B
- Authority
- TW
- Taiwan
- Prior art keywords
- processing
- substrate
- unit
- wafer
- substrate processing
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims description 476
- 239000000758 substrate Substances 0.000 title claims description 151
- 238000000034 method Methods 0.000 title claims description 119
- 238000012937 correction Methods 0.000 claims description 31
- 230000008859 change Effects 0.000 claims description 15
- 230000005856 abnormality Effects 0.000 claims description 14
- 239000000725 suspension Substances 0.000 claims description 10
- 230000002159 abnormal effect Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 149
- 230000008569 process Effects 0.000 description 52
- 238000011068 loading method Methods 0.000 description 33
- 239000007789 gas Substances 0.000 description 31
- 230000006641 stabilisation Effects 0.000 description 27
- 238000011105 stabilization Methods 0.000 description 27
- 238000004519 manufacturing process Methods 0.000 description 19
- 238000012546 transfer Methods 0.000 description 19
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 230000006870 function Effects 0.000 description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 17
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 17
- 230000032258 transport Effects 0.000 description 14
- 229910001873 dinitrogen Inorganic materials 0.000 description 10
- 238000003672 processing method Methods 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 239000003507 refrigerant Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 210000002381 plasma Anatomy 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000013643 reference control Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000000341 volatile oil Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006053670A JP4900904B2 (ja) | 2006-02-28 | 2006-02-28 | 基板処理装置、基板処理条件変更方法及び記憶媒体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200739668A TW200739668A (en) | 2007-10-16 |
| TWI445047B true TWI445047B (zh) | 2014-07-11 |
Family
ID=38555101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096106879A TWI445047B (zh) | 2006-02-28 | 2007-02-27 | A substrate processing apparatus, a substrate processing condition changing method, and a memory medium |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4900904B2 (ko) |
| KR (1) | KR100874278B1 (ko) |
| CN (1) | CN101030525A (ko) |
| TW (1) | TWI445047B (ko) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8369975B2 (en) | 2007-09-21 | 2013-02-05 | Fisher-Rosemount Systems, Inc. | Online recipe synchronization in a real-time batch executive environment |
| JP5511190B2 (ja) * | 2008-01-23 | 2014-06-04 | 株式会社荏原製作所 | 基板処理装置の運転方法 |
| KR100986805B1 (ko) * | 2008-11-21 | 2010-10-11 | 에코피아 주식회사 | 온도 가변형 프로브 스테이션 |
| JP6126248B2 (ja) | 2014-01-20 | 2017-05-10 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP6380887B2 (ja) * | 2014-03-19 | 2018-08-29 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
| KR102308587B1 (ko) | 2014-03-19 | 2021-10-01 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 장치 및 기판 처리 방법 |
| JP6598242B2 (ja) * | 2015-08-19 | 2019-10-30 | 芝浦メカトロニクス株式会社 | 基板処理装置、および基板処理方法 |
| WO2020012951A1 (ja) * | 2018-07-09 | 2020-01-16 | 東京エレクトロン株式会社 | 加工装置、加工方法及びコンピュータ記憶媒体 |
| JP7161896B2 (ja) * | 2018-09-20 | 2022-10-27 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理システム |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2723764B2 (ja) * | 1992-09-01 | 1998-03-09 | 株式会社日立製作所 | 半導体製造装置の停電処理装置 |
| JPH09134857A (ja) * | 1995-11-09 | 1997-05-20 | Kokusai Electric Co Ltd | 半導体製造における異常対策処理方法 |
| JP3771347B2 (ja) * | 1997-03-19 | 2006-04-26 | 株式会社日立製作所 | 真空処理装置及び真空処理方法 |
| JP2004319961A (ja) * | 2003-03-31 | 2004-11-11 | Tokyo Electron Ltd | 基板処理装置、基板処理方法、及び該方法を実行するプログラム |
-
2006
- 2006-02-28 JP JP2006053670A patent/JP4900904B2/ja not_active Expired - Fee Related
-
2007
- 2007-02-14 CN CNA2007100791296A patent/CN101030525A/zh active Pending
- 2007-02-26 KR KR1020070018840A patent/KR100874278B1/ko active IP Right Grant
- 2007-02-27 TW TW096106879A patent/TWI445047B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100874278B1 (ko) | 2008-12-17 |
| TW200739668A (en) | 2007-10-16 |
| JP2007234809A (ja) | 2007-09-13 |
| JP4900904B2 (ja) | 2012-03-21 |
| CN101030525A (zh) | 2007-09-05 |
| KR20070089604A (ko) | 2007-08-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |