TWI440083B - 脈衝超高縱橫尺寸比之介電材料蝕刻 - Google Patents

脈衝超高縱橫尺寸比之介電材料蝕刻 Download PDF

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Publication number
TWI440083B
TWI440083B TW097104575A TW97104575A TWI440083B TW I440083 B TWI440083 B TW I440083B TW 097104575 A TW097104575 A TW 097104575A TW 97104575 A TW97104575 A TW 97104575A TW I440083 B TWI440083 B TW I440083B
Authority
TW
Taiwan
Prior art keywords
etching
gas
source
selective
dielectric layer
Prior art date
Application number
TW097104575A
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English (en)
Chinese (zh)
Other versions
TW200849377A (en
Inventor
秦孔固
依德柏格 艾瑞克Ａ
Original Assignee
蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 蘭姆研究公司 filed Critical 蘭姆研究公司
Publication of TW200849377A publication Critical patent/TW200849377A/zh
Application granted granted Critical
Publication of TWI440083B publication Critical patent/TWI440083B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Plasma Technology (AREA)
TW097104575A 2007-02-05 2008-02-05 脈衝超高縱橫尺寸比之介電材料蝕刻 TWI440083B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/671,342 US7547636B2 (en) 2007-02-05 2007-02-05 Pulsed ultra-high aspect ratio dielectric etch

Publications (2)

Publication Number Publication Date
TW200849377A TW200849377A (en) 2008-12-16
TWI440083B true TWI440083B (zh) 2014-06-01

Family

ID=39676541

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097104575A TWI440083B (zh) 2007-02-05 2008-02-05 脈衝超高縱橫尺寸比之介電材料蝕刻

Country Status (6)

Country Link
US (1) US7547636B2 (https=)
JP (2) JP5503976B2 (https=)
KR (1) KR101455883B1 (https=)
CN (1) CN101606232B (https=)
TW (1) TWI440083B (https=)
WO (1) WO2008097925A1 (https=)

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US8383001B2 (en) * 2009-02-20 2013-02-26 Tokyo Electron Limited Plasma etching method, plasma etching apparatus and storage medium
US8475673B2 (en) * 2009-04-24 2013-07-02 Lam Research Company Method and apparatus for high aspect ratio dielectric etch
US8394723B2 (en) * 2010-01-07 2013-03-12 Lam Research Corporation Aspect ratio adjustment of mask pattern using trimming to alter geometry of photoresist features
JP2012079792A (ja) * 2010-09-30 2012-04-19 Fujitsu Semiconductor Ltd 半導体装置の製造方法
KR102023784B1 (ko) * 2011-03-04 2019-09-20 도쿄엘렉트론가부시키가이샤 질화규소막 에칭 방법
US8420545B2 (en) * 2011-05-23 2013-04-16 Nanya Technology Corporation Plasma etching method and plasma etching apparatus for preparing high-aspect-ratio structures
JP5802454B2 (ja) * 2011-06-30 2015-10-28 株式会社日立ハイテクノロジーズ プラズマ処理方法
US20130119018A1 (en) * 2011-11-15 2013-05-16 Keren Jacobs Kanarik Hybrid pulsing plasma processing systems
US9224618B2 (en) * 2012-01-17 2015-12-29 Lam Research Corporation Method to increase mask selectivity in ultra-high aspect ratio etches
US20140051256A1 (en) * 2012-08-15 2014-02-20 Lam Research Corporation Etch with mixed mode pulsing
KR102099408B1 (ko) 2012-09-18 2020-04-10 도쿄엘렉트론가부시키가이샤 플라즈마 에칭 방법 및 플라즈마 에칭 장치
JP6267953B2 (ja) * 2013-12-19 2018-01-24 東京エレクトロン株式会社 半導体装置の製造方法
US9159561B2 (en) 2013-12-26 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method for overcoming broken line and photoresist scum issues in tri-layer photoresist patterning
JP6315809B2 (ja) * 2014-08-28 2018-04-25 東京エレクトロン株式会社 エッチング方法
US10599039B2 (en) * 2016-09-14 2020-03-24 Mattson Technology, Inc. Strip process for high aspect ratio structure
US10134600B2 (en) 2017-02-06 2018-11-20 Lam Research Corporation Dielectric contact etch
JP6840041B2 (ja) * 2017-06-21 2021-03-10 東京エレクトロン株式会社 エッチング方法
JP2019102483A (ja) * 2017-11-28 2019-06-24 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP7399863B2 (ja) * 2018-02-05 2023-12-18 ラム リサーチ コーポレーション アモルファスカーボン層の開孔プロセス
US10504744B1 (en) 2018-07-19 2019-12-10 Lam Research Corporation Three or more states for achieving high aspect ratio dielectric etch
KR102878622B1 (ko) * 2019-10-01 2025-10-30 램 리써치 코포레이션 고 종횡비 피처들의 제조 동안 열화를 방지하기 위한 마스크 캡슐화
CN113035706A (zh) * 2019-12-25 2021-06-25 中微半导体设备(上海)股份有限公司 一种等离子体刻蚀方法和刻蚀装置
JP7462444B2 (ja) * 2020-03-19 2024-04-05 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US12266534B2 (en) * 2020-06-15 2025-04-01 Tokyo Electron Limited Forming a semiconductor device using a protective layer
KR20230165819A (ko) * 2021-04-14 2023-12-05 도쿄엘렉트론가부시키가이샤 에칭 방법 및 플라즈마 처리 장치
US11495470B1 (en) * 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
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Also Published As

Publication number Publication date
JP2013239729A (ja) 2013-11-28
KR20090125076A (ko) 2009-12-03
JP2010518605A (ja) 2010-05-27
TW200849377A (en) 2008-12-16
US20080188082A1 (en) 2008-08-07
JP5503976B2 (ja) 2014-05-28
CN101606232B (zh) 2013-01-23
US7547636B2 (en) 2009-06-16
CN101606232A (zh) 2009-12-16
WO2008097925A1 (en) 2008-08-14
KR101455883B1 (ko) 2014-11-03

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