KR101455883B1 - 펄스화된 초고 애스펙트비 유전체 식각 - Google Patents

펄스화된 초고 애스펙트비 유전체 식각 Download PDF

Info

Publication number
KR101455883B1
KR101455883B1 KR1020097018057A KR20097018057A KR101455883B1 KR 101455883 B1 KR101455883 B1 KR 101455883B1 KR 1020097018057 A KR1020097018057 A KR 1020097018057A KR 20097018057 A KR20097018057 A KR 20097018057A KR 101455883 B1 KR101455883 B1 KR 101455883B1
Authority
KR
South Korea
Prior art keywords
etch
gas
source
carbon
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020097018057A
Other languages
English (en)
Korean (ko)
Other versions
KR20090125076A (ko
Inventor
경-구 지
에릭 에이 에델버그
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20090125076A publication Critical patent/KR20090125076A/ko
Application granted granted Critical
Publication of KR101455883B1 publication Critical patent/KR101455883B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Plasma Technology (AREA)
KR1020097018057A 2007-02-05 2008-02-04 펄스화된 초고 애스펙트비 유전체 식각 Active KR101455883B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/671,342 2007-02-05
US11/671,342 US7547636B2 (en) 2007-02-05 2007-02-05 Pulsed ultra-high aspect ratio dielectric etch
PCT/US2008/052950 WO2008097925A1 (en) 2007-02-05 2008-02-04 Pulsed ultra-high aspect ratio dielectric etch

Publications (2)

Publication Number Publication Date
KR20090125076A KR20090125076A (ko) 2009-12-03
KR101455883B1 true KR101455883B1 (ko) 2014-11-03

Family

ID=39676541

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097018057A Active KR101455883B1 (ko) 2007-02-05 2008-02-04 펄스화된 초고 애스펙트비 유전체 식각

Country Status (6)

Country Link
US (1) US7547636B2 (https=)
JP (2) JP5503976B2 (https=)
KR (1) KR101455883B1 (https=)
CN (1) CN101606232B (https=)
TW (1) TWI440083B (https=)
WO (1) WO2008097925A1 (https=)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070218691A1 (en) * 2006-03-17 2007-09-20 Tokyo Electron Limited Plasma etching method, plasma etching apparatus and computer-readable storage medium
CN101952945B (zh) * 2007-11-29 2013-08-14 朗姆研究公司 控制微负载的脉冲式偏置等离子体工艺
US9059116B2 (en) * 2007-11-29 2015-06-16 Lam Research Corporation Etch with pulsed bias
WO2010033924A2 (en) * 2008-09-22 2010-03-25 Applied Materials, Inc. Etch reactor suitable for etching high aspect ratio features
US8383001B2 (en) * 2009-02-20 2013-02-26 Tokyo Electron Limited Plasma etching method, plasma etching apparatus and storage medium
US8475673B2 (en) * 2009-04-24 2013-07-02 Lam Research Company Method and apparatus for high aspect ratio dielectric etch
US8394723B2 (en) * 2010-01-07 2013-03-12 Lam Research Corporation Aspect ratio adjustment of mask pattern using trimming to alter geometry of photoresist features
JP2012079792A (ja) * 2010-09-30 2012-04-19 Fujitsu Semiconductor Ltd 半導体装置の製造方法
KR102023784B1 (ko) * 2011-03-04 2019-09-20 도쿄엘렉트론가부시키가이샤 질화규소막 에칭 방법
US8420545B2 (en) * 2011-05-23 2013-04-16 Nanya Technology Corporation Plasma etching method and plasma etching apparatus for preparing high-aspect-ratio structures
JP5802454B2 (ja) * 2011-06-30 2015-10-28 株式会社日立ハイテクノロジーズ プラズマ処理方法
US20130119018A1 (en) * 2011-11-15 2013-05-16 Keren Jacobs Kanarik Hybrid pulsing plasma processing systems
US9224618B2 (en) * 2012-01-17 2015-12-29 Lam Research Corporation Method to increase mask selectivity in ultra-high aspect ratio etches
US20140051256A1 (en) * 2012-08-15 2014-02-20 Lam Research Corporation Etch with mixed mode pulsing
KR102099408B1 (ko) 2012-09-18 2020-04-10 도쿄엘렉트론가부시키가이샤 플라즈마 에칭 방법 및 플라즈마 에칭 장치
JP6267953B2 (ja) * 2013-12-19 2018-01-24 東京エレクトロン株式会社 半導体装置の製造方法
US9159561B2 (en) 2013-12-26 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method for overcoming broken line and photoresist scum issues in tri-layer photoresist patterning
JP6315809B2 (ja) * 2014-08-28 2018-04-25 東京エレクトロン株式会社 エッチング方法
US10599039B2 (en) * 2016-09-14 2020-03-24 Mattson Technology, Inc. Strip process for high aspect ratio structure
US10134600B2 (en) 2017-02-06 2018-11-20 Lam Research Corporation Dielectric contact etch
JP6840041B2 (ja) * 2017-06-21 2021-03-10 東京エレクトロン株式会社 エッチング方法
JP2019102483A (ja) * 2017-11-28 2019-06-24 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP7399863B2 (ja) * 2018-02-05 2023-12-18 ラム リサーチ コーポレーション アモルファスカーボン層の開孔プロセス
US10504744B1 (en) 2018-07-19 2019-12-10 Lam Research Corporation Three or more states for achieving high aspect ratio dielectric etch
KR102878622B1 (ko) * 2019-10-01 2025-10-30 램 리써치 코포레이션 고 종횡비 피처들의 제조 동안 열화를 방지하기 위한 마스크 캡슐화
CN113035706A (zh) * 2019-12-25 2021-06-25 中微半导体设备(上海)股份有限公司 一种等离子体刻蚀方法和刻蚀装置
JP7462444B2 (ja) * 2020-03-19 2024-04-05 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US12266534B2 (en) * 2020-06-15 2025-04-01 Tokyo Electron Limited Forming a semiconductor device using a protective layer
KR20230165819A (ko) * 2021-04-14 2023-12-05 도쿄엘렉트론가부시키가이샤 에칭 방법 및 플라즈마 처리 장치
US11495470B1 (en) * 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
TW202538865A (zh) * 2024-02-22 2025-10-01 日商東京威力科創股份有限公司 基板處理方法及基板處理系統

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11340211A (ja) * 1998-03-27 1999-12-10 Nec Corp 基板処理方法および基板処理装置
JP2000133638A (ja) * 1998-10-22 2000-05-12 Tokyo Electron Ltd プラズマエッチング方法およびプラズマエッチング装置
JP2006523030A (ja) * 2003-04-09 2006-10-05 ラム　リサーチ　コーポレーション ガス化学反応の周期的変調を用いたプラズマエッチング方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4687543A (en) 1986-02-21 1987-08-18 Tegal Corporation Selective plasma etching during formation of integrated circuitry
JP3239460B2 (ja) * 1992-09-08 2001-12-17 ソニー株式会社 接続孔の形成方法
US5843847A (en) * 1996-04-29 1998-12-01 Applied Materials, Inc. Method for etching dielectric layers with high selectivity and low microloading
US20010051438A1 (en) 1997-06-25 2001-12-13 Samsung Electronics Process and apparatus for dry-etching a semiconductor layer
US6284149B1 (en) * 1998-09-18 2001-09-04 Applied Materials, Inc. High-density plasma etching of carbon-based low-k materials in a integrated circuit
JP4408313B2 (ja) * 1999-10-29 2010-02-03 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
KR100327346B1 (ko) 1999-07-20 2002-03-06 윤종용 선택적 폴리머 증착을 이용한 플라즈마 식각방법 및 이를이용한 콘택홀 형성방법
US6147005A (en) 1999-07-23 2000-11-14 Worldwide Semiconductor Manufacturing Corp. Method of forming dual damascene structures
US6368974B1 (en) 1999-08-02 2002-04-09 United Microelectronics Corp. Shrinking equal effect critical dimension of mask by in situ polymer deposition and etching
JP2001332510A (ja) * 2000-05-25 2001-11-30 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US6831018B2 (en) 2001-08-21 2004-12-14 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor device
US20030153195A1 (en) * 2002-02-13 2003-08-14 Applied Materials, Inc. Method and apparatus for providing modulated bias power to a plasma etch reactor
US6759340B2 (en) 2002-05-09 2004-07-06 Padmapani C. Nallan Method of etching a trench in a silicon-on-insulator (SOI) structure
US20050112891A1 (en) 2003-10-21 2005-05-26 David Johnson Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation
JP2007537602A (ja) * 2004-05-11 2007-12-20 アプライド　マテリアルズ　インコーポレイテッド フルオロカーボン化学エッチングにおけるｈ２添加物を使用しての炭素ドープ酸化ケイ素エッチング
US7344975B2 (en) 2005-08-26 2008-03-18 Micron Technology, Inc. Method to reduce charge buildup during high aspect ratio contact etch
US7432210B2 (en) * 2005-10-05 2008-10-07 Applied Materials, Inc. Process to open carbon based hardmask
US7531102B2 (en) 2006-03-31 2009-05-12 Intel Corporation Simultaneous selective polymer deposition and etch pitch doubling for sub 50nm line/space patterning

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11340211A (ja) * 1998-03-27 1999-12-10 Nec Corp 基板処理方法および基板処理装置
JP2000133638A (ja) * 1998-10-22 2000-05-12 Tokyo Electron Ltd プラズマエッチング方法およびプラズマエッチング装置
JP2006523030A (ja) * 2003-04-09 2006-10-05 ラム　リサーチ　コーポレーション ガス化学反応の周期的変調を用いたプラズマエッチング方法

Also Published As

Publication number Publication date
JP2013239729A (ja) 2013-11-28
KR20090125076A (ko) 2009-12-03
JP2010518605A (ja) 2010-05-27
TW200849377A (en) 2008-12-16
US20080188082A1 (en) 2008-08-07
JP5503976B2 (ja) 2014-05-28
CN101606232B (zh) 2013-01-23
US7547636B2 (en) 2009-06-16
CN101606232A (zh) 2009-12-16
WO2008097925A1 (en) 2008-08-14
TWI440083B (zh) 2014-06-01

Similar Documents

Publication Publication Date Title
KR101455883B1 (ko) 펄스화된 초고 애스펙트비 유전체 식각
KR101433990B1 (ko) 초고 애스펙트비 유전체 식각
US7645707B2 (en) Etch profile control
US7772122B2 (en) Sidewall forming processes
US8394722B2 (en) Bi-layer, tri-layer mask CD control
US8864931B2 (en) Mask trimming
US8614149B2 (en) Critical dimension reduction and roughness control
JP4865564B2 (ja) 誘電体レイヤにフィーチャをエッチングするための方法及び装置
US20060134917A1 (en) Reduction of etch mask feature critical dimensions
US8470715B2 (en) CD bias loading control with ARC layer open
US7560388B2 (en) Self-aligned pitch reduction
KR20060020621A (ko) 개선된 이중층 포토레지스트 패턴을 제공하는 방법
US20090311871A1 (en) Organic arc etch selective for immersion photoresist

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20171013

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20181011

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20191010

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 12

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000