TWI434411B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

Info

Publication number
TWI434411B
TWI434411B TW094136697A TW94136697A TWI434411B TW I434411 B TWI434411 B TW I434411B TW 094136697 A TW094136697 A TW 094136697A TW 94136697 A TW94136697 A TW 94136697A TW I434411 B TWI434411 B TW I434411B
Authority
TW
Taiwan
Prior art keywords
conductive layer
layer
organic compound
organic
field effect
Prior art date
Application number
TW094136697A
Other languages
English (en)
Chinese (zh)
Other versions
TW200629549A (en
Inventor
安部寬子
岩城裕司
湯川幹央
山崎舜平
荒井康行
渡邊康子
守屋芳隆
Original Assignee
半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW200629549A publication Critical patent/TW200629549A/zh
Application granted granted Critical
Publication of TWI434411B publication Critical patent/TWI434411B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/23—Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/611—Charge transfer complexes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
TW094136697A 2004-10-22 2005-10-20 半導體裝置 TWI434411B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004308838 2004-10-22

Publications (2)

Publication Number Publication Date
TW200629549A TW200629549A (en) 2006-08-16
TWI434411B true TWI434411B (zh) 2014-04-11

Family

ID=36203026

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094136697A TWI434411B (zh) 2004-10-22 2005-10-20 半導體裝置

Country Status (6)

Country Link
US (2) US7781758B2 (https=)
JP (1) JP5268197B2 (https=)
KR (1) KR101258672B1 (https=)
CN (1) CN101044624A (https=)
TW (1) TWI434411B (https=)
WO (1) WO2006043611A1 (https=)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2348460B1 (en) * 2004-10-18 2014-04-23 Semiconductor Energy Laboratory Co, Ltd. Organic anti fuse memory
KR101219749B1 (ko) * 2004-10-22 2013-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
CN101044624A (zh) 2004-10-22 2007-09-26 株式会社半导体能源研究所 半导体器件
US7688624B2 (en) * 2004-11-26 2010-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN100565900C (zh) * 2004-12-03 2009-12-02 株式会社半导体能源研究所 半导体器件
US8604547B2 (en) * 2005-02-10 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device
US7926726B2 (en) * 2005-03-28 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Survey method and survey system
US7700984B2 (en) * 2005-05-20 2010-04-20 Semiconductor Energy Laboratory Co., Ltd Semiconductor device including memory cell
US7868320B2 (en) 2005-05-31 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101369864B1 (ko) 2005-08-12 2014-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그 제조방법
US7935957B2 (en) * 2005-08-12 2011-05-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and a semiconductor device
US7912439B2 (en) 2005-11-25 2011-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and operating method thereof
CN101401209B (zh) * 2006-03-10 2011-05-25 株式会社半导体能源研究所 存储元件以及半导体器件
EP1850378A3 (en) * 2006-04-28 2013-08-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and semicondutor device
US7719001B2 (en) 2006-06-28 2010-05-18 Semiconductor Energy Laboratory Co., Ltd Semiconductor device with metal oxides and an organic compound
US7988057B2 (en) 2006-11-28 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
KR101485926B1 (ko) * 2007-02-02 2015-02-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억장치
US8283724B2 (en) 2007-02-26 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device, and method for manufacturing the same
USD645029S1 (en) * 2008-05-09 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Antenna
USD602922S1 (en) * 2008-05-09 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Contactless data carrier
KR20140069342A (ko) 2008-05-16 2014-06-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광소자 및 전자기기
USD605642S1 (en) * 2008-09-10 2009-12-08 Semiconductor Energy Laboratory Co., Ltd. Contactless data carrier
KR101803552B1 (ko) * 2010-02-26 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이 표시 장치를 구비하는 전자 서적
US9698129B2 (en) 2011-03-18 2017-07-04 Johnson & Johnson Vision Care, Inc. Stacked integrated component devices with energization
US10451897B2 (en) 2011-03-18 2019-10-22 Johnson & Johnson Vision Care, Inc. Components with multiple energization elements for biomedical devices
US8857983B2 (en) 2012-01-26 2014-10-14 Johnson & Johnson Vision Care, Inc. Ophthalmic lens assembly having an integrated antenna structure
US10381687B2 (en) 2014-08-21 2019-08-13 Johnson & Johnson Vision Care, Inc. Methods of forming biocompatible rechargable energization elements for biomedical devices
US9383593B2 (en) 2014-08-21 2016-07-05 Johnson & Johnson Vision Care, Inc. Methods to form biocompatible energization elements for biomedical devices comprising laminates and placed separators
US9793536B2 (en) 2014-08-21 2017-10-17 Johnson & Johnson Vision Care, Inc. Pellet form cathode for use in a biocompatible battery
US9941547B2 (en) 2014-08-21 2018-04-10 Johnson & Johnson Vision Care, Inc. Biomedical energization elements with polymer electrolytes and cavity structures
US9715130B2 (en) 2014-08-21 2017-07-25 Johnson & Johnson Vision Care, Inc. Methods and apparatus to form separators for biocompatible energization elements for biomedical devices
US9599842B2 (en) 2014-08-21 2017-03-21 Johnson & Johnson Vision Care, Inc. Device and methods for sealing and encapsulation for biocompatible energization elements
US10361404B2 (en) 2014-08-21 2019-07-23 Johnson & Johnson Vision Care, Inc. Anodes for use in biocompatible energization elements
US10361405B2 (en) 2014-08-21 2019-07-23 Johnson & Johnson Vision Care, Inc. Biomedical energization elements with polymer electrolytes
US10627651B2 (en) 2014-08-21 2020-04-21 Johnson & Johnson Vision Care, Inc. Methods and apparatus to form biocompatible energization primary elements for biomedical devices with electroless sealing layers
JP1555474S (https=) * 2015-10-26 2016-08-08
JP1555473S (https=) * 2015-10-26 2016-08-08
US10345620B2 (en) 2016-02-18 2019-07-09 Johnson & Johnson Vision Care, Inc. Methods and apparatus to form biocompatible energization elements incorporating fuel cells for biomedical devices

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3833894A (en) 1973-06-20 1974-09-03 Ibm Organic memory device
US4115872A (en) 1977-05-31 1978-09-19 Burroughs Corporation Amorphous semiconductor memory device for employment in an electrically alterable read-only memory
US4177475A (en) * 1977-10-31 1979-12-04 Burroughs Corporation High temperature amorphous memory device for an electrically alterable read-only memory
IL61678A (en) * 1979-12-13 1984-04-30 Energy Conversion Devices Inc Programmable cell and programmable electronic arrays comprising such cells
IL61671A (en) 1979-12-13 1984-04-30 Energy Conversion Devices Inc Diode and rom or eeprom devices using it
US4499557A (en) * 1980-10-28 1985-02-12 Energy Conversion Devices, Inc. Programmable cell for use in programmable electronic arrays
JP2982286B2 (ja) 1990-10-30 1999-11-22 オムロン株式会社 データキャリア
US5375250A (en) 1992-07-13 1994-12-20 Van Den Heuvel; Raymond C. Method of intelligent computing and neural-like processing of time and space functions
JPH06232271A (ja) * 1993-01-29 1994-08-19 Nippon Telegr & Teleph Corp <Ntt> 結線材料及び入出力制御方法
TW287313B (https=) 1995-02-20 1996-10-01 Matsushita Electric Industrial Co Ltd
US6340588B1 (en) 1995-04-25 2002-01-22 Discovery Partners International, Inc. Matrices with memories
WO1997030445A1 (en) 1996-02-16 1997-08-21 Philips Electronics N.V. Write-once read-many electrical memory element of a conjugated polymer or oligomer
NO973993L (no) 1997-09-01 1999-03-02 Opticom As Leseminne og leseminneinnretninger
JP3761300B2 (ja) 1997-09-30 2006-03-29 株式会社東芝 シフトレジスター型記憶素子
JP2000113152A (ja) 1998-10-05 2000-04-21 Hitachi Maxell Ltd 非接触メモリ素子を内蔵した磁気ストライプテープ及びそれを利用して製造されたｉｃカード及びｉｃタグ
US6498240B1 (en) * 1999-09-17 2002-12-24 Millipore Corporation Method for sequencing reaction cleanup by constant pressure diffential ultrafiltration
US6509217B1 (en) 1999-10-22 2003-01-21 Damoder Reddy Inexpensive, reliable, planar RFID tag structure and method for making same
JP2001189431A (ja) * 1999-12-28 2001-07-10 Seiko Epson Corp メモリのセル構造及びメモリデバイス
CN1181546C (zh) 2000-03-28 2004-12-22 皇家菲利浦电子有限公司 带可编程存储器单元的集成电路
JP2001345431A (ja) 2000-05-31 2001-12-14 Japan Science & Technology Corp 有機強誘電体薄膜及び半導体デバイス
JP3377786B2 (ja) 2000-06-21 2003-02-17 日立マクセル株式会社 半導体チップ
KR100741039B1 (ko) * 2000-06-21 2007-07-20 히다치 막셀 가부시키가이샤 반도체칩 및 이것을 사용한 반도체장치
JP2002026283A (ja) * 2000-06-30 2002-01-25 Seiko Epson Corp 多層構造のメモリ装置及びその製造方法
AU2001265068A1 (en) 2000-10-31 2002-05-15 The Regents Of The University Of California Organic bistable device and organic memory cells
SG142160A1 (en) * 2001-03-19 2008-05-28 Semiconductor Energy Lab Method of manufacturing a semiconductor device
EP1397809B1 (en) * 2001-05-07 2007-06-27 Advanced Micro Devices, Inc. A memory device with a self-assembled polymer film and method of making the same
JP2003007982A (ja) 2001-06-22 2003-01-10 Nec Corp 磁気記憶装置及び磁気記憶装置の設計方法
JP4218527B2 (ja) * 2002-02-01 2009-02-04 株式会社日立製作所 記憶装置
JP2003243631A (ja) 2002-02-18 2003-08-29 Mitsubishi Electric Corp 薄膜磁性体記憶装置ならびにそれを用いた無線チップ、流通管理システムおよび製造工程管理システム
US6683322B2 (en) 2002-03-01 2004-01-27 Hewlett-Packard Development Company, L.P. Flexible hybrid memory element
TWI223569B (en) * 2002-03-20 2004-11-01 Sanyo Electric Co Method for reducing light quantity of organic EL panel and organic EL panel
JP3940014B2 (ja) 2002-03-29 2007-07-04 富士通株式会社 半導体集積回路、無線タグ、および非接触型ｉｃカード
JP4539007B2 (ja) 2002-05-09 2010-09-08 日本電気株式会社 半導体記憶装置
US6847541B2 (en) * 2002-06-07 2005-01-25 Mitsubishi Chemical Corporation Information storage device, and information storage method and information regeneration method employing the information storage device
US6828685B2 (en) 2002-06-14 2004-12-07 Hewlett-Packard Development Company, L.P. Memory device having a semiconducting polymer film
JP2004128471A (ja) 2002-08-07 2004-04-22 Canon Inc 不揮発メモリ装置
US6847047B2 (en) 2002-11-04 2005-01-25 Advanced Micro Devices, Inc. Methods that facilitate control of memory arrays utilizing zener diode-like devices
JP4509467B2 (ja) 2002-11-08 2010-07-21 シャープ株式会社 不揮発可変抵抗素子、及び記憶装置
JP2004185755A (ja) 2002-12-05 2004-07-02 Sharp Corp 不揮発性半導体記憶装置
US7220985B2 (en) 2002-12-09 2007-05-22 Spansion, Llc Self aligned memory element and wordline
JP4101643B2 (ja) * 2002-12-26 2008-06-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4671600B2 (ja) * 2002-12-27 2011-04-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20040152276A1 (en) * 2003-01-14 2004-08-05 Naoki Nishimura Device, and substrate on which circuit and antenna are formed
JP4323813B2 (ja) 2003-01-14 2009-09-02 キヤノン株式会社 基板の製造方法
EP1594176B1 (en) 2003-02-14 2010-05-19 Fuji Electric Holdings Co., Ltd. Switching device
JP4566578B2 (ja) 2003-02-24 2010-10-20 株式会社半導体エネルギー研究所 薄膜集積回路の作製方法
US7973313B2 (en) 2003-02-24 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container
US6977389B2 (en) 2003-06-02 2005-12-20 Advanced Micro Devices, Inc. Planar polymer memory device
US7050326B2 (en) 2003-10-07 2006-05-23 Hewlett-Packard Development Company, L.P. Magnetic memory device with current carrying reference layer
DE10355561A1 (de) 2003-11-28 2005-06-30 Infineon Technologies Ag Halbleiteranordnung mit nichtflüchtigen Speichern
JP2005183619A (ja) 2003-12-18 2005-07-07 Canon Inc 不揮発メモリ装置
WO2005096380A1 (en) 2004-04-02 2005-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
EP2348460B1 (en) 2004-10-18 2014-04-23 Semiconductor Energy Laboratory Co, Ltd. Organic anti fuse memory
KR101219749B1 (ko) 2004-10-22 2013-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
CN101044624A (zh) 2004-10-22 2007-09-26 株式会社半导体能源研究所 半导体器件
US7688624B2 (en) 2004-11-26 2010-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8188461B2 (en) 2005-05-31 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Organic memory device

Also Published As

Publication number Publication date
US20080048180A1 (en) 2008-02-28
JP2011077535A (ja) 2011-04-14
US8227802B2 (en) 2012-07-24
WO2006043611A1 (en) 2006-04-27
CN101044624A (zh) 2007-09-26
KR101258672B1 (ko) 2013-04-26
TW200629549A (en) 2006-08-16
KR20070067706A (ko) 2007-06-28
JP5268197B2 (ja) 2013-08-21
US20100295034A1 (en) 2010-11-25
US7781758B2 (en) 2010-08-24

Similar Documents

Publication Publication Date Title
TWI434411B (zh) 半導體裝置
CN100576557C (zh) 半导体器件及其制造方法
JP5303588B2 (ja) 半導体装置の作製方法
CN1873998B (zh) 半导体器件及其制造方法
CN100565900C (zh) 半导体器件
KR20070084394A (ko) 반도체 디바이스 및 그것의 구동 방법
US7795617B2 (en) Semiconductor device, IC card, IC tag, RFID, transponder, paper money, valuable securities, passport, electronic device, bag, and clothes
US7358590B2 (en) Semiconductor device and driving method thereof
US8649201B2 (en) Memory device, semiconductor device, and driving method therof
JP4767653B2 (ja) 半導体装置及び無線チップ
JP5190182B2 (ja) 半導体装置
JP4912671B2 (ja) 半導体装置
JP2006148088A (ja) 半導体装置
JP2006310831A (ja) 半導体装置およびその駆動方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees