TWI430423B - A semiconductor device, a camera module, and a semiconductor device - Google Patents

A semiconductor device, a camera module, and a semiconductor device Download PDF

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Publication number
TWI430423B
TWI430423B TW099118940A TW99118940A TWI430423B TW I430423 B TWI430423 B TW I430423B TW 099118940 A TW099118940 A TW 099118940A TW 99118940 A TW99118940 A TW 99118940A TW I430423 B TWI430423 B TW I430423B
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TW
Taiwan
Prior art keywords
semiconductor substrate
semiconductor device
metal film
contact hole
semiconductor
Prior art date
Application number
TW099118940A
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English (en)
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TW201117345A (en
Inventor
Mie Matsuo
Kenichiro Hagiwara
Akira Komatsu
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Toshiba Kk
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Publication of TW201117345A publication Critical patent/TW201117345A/zh
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Publication of TWI430423B publication Critical patent/TWI430423B/zh

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Description

半導體裝置，相機模組及半導體裝置之製造方法
本發明係主張2009年6月22日申請之JP2009-148098之優先權，內容亦引用該申請案之全部內容。
本發明關於半導體裝置，相機模組及半導體裝置之製造方法，特別關於使用固態攝像元件之半導體裝置，相機模組及半導體裝置之製造方法。
近年來，伴隨電子機器之小型化及輕量化，特別是行動電話使用之相機模組之小型化要求變高。伴隨著此，作為相機模組之封裝而採用具備BGA(Ball Grid Array)型端子的CSP(Chip Scale Package)構造之封裝者變多。具備BGA型端子之相機模組，例如係於半導體基板中之形成攝像元件之面(以下稱為上面)以及相反側之面(以下稱為背面)形成配線圖案，針對基板背面之配線圖案與基板上面之攝像元件，介由形成於基板內或側面之電極電連接。如此則，形成有攝像元件之半導體基板可以薄型化，結果，相機模組之更小型化及薄型化可以實現(例如參照JP2007-189198號公報)。
但是，於習知技術之相機模組，來自基板背面之光係介由基板射入形成於其上面之攝像元件，而於攝像圖像產生重影(ghost)或產生基板背面之配線圖案被映射等問題。作為解決此問題之技術，例如有在基板背面形成光反射層或光吸收層用於遮斷來自被攝像體以外之光的技術(例如參照JP2007-189198號公報)。
但是，如上述說明，和形成於基板上面之攝像元件之間的電連接，在採用貫穿基板之貫穿電極而引出基板背面之構造時，在半導體基板與基板背面之配線圖案之間會產生寄生容量及寄生電阻。如此則，導致高頻信號之波形鈍化。因此，導致固態攝像元件之高速動作變難之問題。此一問題，例如即使將形成於基板背面之遮光用之層構成為金屬層時以難以解決。亦即，即使於基板背面形成金屬層時，因該金屬層為電性浮動，而難以解決上述寄生容量及寄生電阻之問題。
半導體裝置係具備：半導體基板，於第1面形成有半導體元件；配線圖案，被形成於上述半導體基板之和上述第1面為相反側的第2面，至少一部分包含有接地線；貫穿電極，將上述半導體基板由上述第1面至上述第2面予以貫穿，將上述半導體元件與上述配線圖案予以電連接；及金屬膜，形成於上述半導體基板之上述第2面與上述配線圖案延伸之面之間，被電連接於上述接地線。
相機模組，係具備：半導體裝置，其具備：半導體基板，於第1面具備半導體元件；配線圖案，位於上述半導體基板之和上述第1面為相反側的第2面，至少一部分包含有接地線；貫穿電極，將上述半導體基板由上述第1面至上述第2面予以貫穿，將上述半導體元件與上述配線圖案予以電連接；及金屬膜，位於上述半導體基板之上述第2面與上述配線圖案延伸之面之間，被電連接於上述接地線；透鏡單元，配設於上述半導體裝置之上述第1面側；及框體，用於保持上述半導體裝置及上述透鏡單元。
半導體裝置之製造方法，係包含：於第1面具備有半導體元件之半導體基板上形成接觸孔，該接觸孔係自上述第1面貫穿至和該第1面為相反側的第2面；於上述半導體基板之上述第2面側，形成被電連接於該半導體基板的金屬膜；形成使上述金屬膜之一部分露出之同時，覆蓋該金屬膜的絕緣膜；於上述絕緣膜上形成配線圖案之同時，於上述接觸孔內形成貫穿上述半導體基板的貫穿電極，該配線圖案係至少包含介由上述露出部分電連接於上述金屬膜之接地線者。
以下參照圖面詳細說明本發明實施形態之半導體裝置、相機模組及半導體裝置之製造方法。又，以下實施形態並非用於限定本發明。另外，以下實施形態使用之半導體裝置及相機模組之斷面圖為模式圖，層之膜厚與寬度間之關係或各層之厚度之比率等係和實際有出入。另外，實施形態中所示層之厚度僅為一例，並非用於限定本發明。
以下實施形態之半導體裝置，係具備：半導體基板，係於第1面形成有半導體元件；配線圖案，位於上述半導體基板之和上述第1面為相反側的第2面，至少一部分包含有接地線；貫穿電極，將上述半導體基板由上述第1面至上述第2面予以貫穿，將上述半導體元件與上述配線圖案予以電連接；及金屬膜，位於上述半導體基板之上述第2面與上述配線圖案延伸之面之間，被電連接於上述接地線。
以下實施形態之相機模組，係具備：半導體裝置，其具備：半導體基板，於第1面具備半導體元件；配線圖案，位於上述半導體基板之和上述第1面為相反側的第2面，至少一部分包含有接地線；貫穿電極，將上述半導體基板由上述第1面至上述第2面予以貫穿，將上述半導體元件與上述配線圖案予以電連接；及金屬膜，位於上述半導體基板之上述第2面與上述配線圖案延伸之面之間，被電連接於上述接地線；透鏡單元，配設於上述半導體裝置之上述第1面側；及框體，用於保持上述半導體裝置及上述透鏡單元。
以下實施形態之半導體裝置之製造方法，係包含：於第1面具備有半導體元件之半導體基板上形成接觸孔，該接觸孔係自上述第1面貫穿至和該第1面為相反側的第2面；於上述半導體基板之上述第2面側，形成被電連接於該半導體基板的金屬膜；形成使上述金屬膜之一部分露出之同時，覆蓋該金屬膜的絕緣膜；於上述絕緣膜上形成配線圖案之同時，於上述接觸孔內形成貫穿上述半導體基板的貫穿電極，該配線圖案係至少包含介由上述露出部分電連接於上述金屬膜之接地線者。
(第1實施形態)
以下參照圖面詳細說明本發明第1實施形態之半導體裝置、相機模組及半導體裝置之製造方法。圖1表示本發明第1實施形態之相機模組1之概略構造之模式斷面圖。又，於圖1係表示，在半導體裝置11之半導體基板中之形成固態攝像元件11A之面的垂直面切斷相機模組1之斷面圖。
如圖1所示，相機模組1係具備：包含固態攝像元件11A之半導體裝置11；配置於半導體裝置11之固態攝像元件11A之受光面(以下稱為第1面)側的覆蓋玻璃12；針對半導體裝置11將覆蓋玻璃12予以固定的接著層13；於半導體裝置11之固態攝像元件11A之第1面側，介由覆蓋玻璃12配置的透鏡單元14；及相機框體15，用於收納固定有覆蓋玻璃12的半導體裝置11及透鏡單元14。在半導體裝置11中之形成有固態攝像元件11A之面的相反側之面(以下稱為第2面)側，安裝作為外部連接端子的錫球16。
於上述，固態攝像元件11A係由例如CMOS(Complementary Metal Oxide Semiconductor)或CCD(Charge Coupled Device)感測器等構成之半導體元件。另外，透鏡單元14，亦包含：使由相機框體15之光學窗15A射入之光成像於固態攝像元件11A之受光面的1個以上之透鏡141；及用於保持透鏡141的透鏡保持器142。
以下參照圖2、3詳細說明本發明第1實施形態之半導體裝置11。圖2表示本發明第1實施形態之半導體裝置11之概略構造之模式斷面圖。圖3表示半導體裝置11之概略構造之上視圖。但是，為方便說明，於圖3省略圖示半導體裝置11之一部分之層。又，圖2為圖3之A-A斷面圖。
如圖2所示，半導體裝置11係具備：半導體基板111，於第1面側形成有固態攝像元件11A；濾鏡層112，被形成於半導體基板111之第1面；聚光用之微透鏡陣列113，其在半導體基板111之第1面側中之固態攝像元件11A所對應之處，介由濾鏡層112被形成；電極焊墊114，被形成於半導體基板111之第1面側，電連接於固態攝像元件11A；貫穿電極116a，將半導體基板111由第1面至第2面予以貫穿，使和電極焊墊114間之電連接被引出至半導體基板111之第2面側；配線圖案116，被形成於半導體基板111之第2面側；絕緣膜115，用於防止半導體基板111與配線圖案116及貫穿電極116a之直接接觸；GND平面117，被形成於半導體基板111之第2面與配線圖案116延伸之面(或層)之間；GND接觸部116b，其貫穿絕緣膜115而電連接配線圖案116與GND平面117；絕緣樹脂製之焊錫阻劑118，用於保護半導體基板111之形成有配線圖案116的第2面側；及錫球16，介由焊錫阻劑118作為和配線圖案116呈電性接觸的外部連接端子。另外，於半導體裝置11上具備：配置於半導體基板111之第1面側的覆蓋玻璃12；及將覆蓋玻璃12固定於半導體基板111的接著層13。
半導體基板111可使用例如膜厚薄至100μm以下之矽(111)基板。另外，固態攝像元件11A，當構成為例如CMOS感測器時，1個畫素係由1個以上之半導體元件構成，具備複數個該畫素以2維陣列狀配置於半導體基板111之第1面之構成。另外，至少在半導體基板111之第1面中形成有固態攝像元件11A的區域，被形成和RGB畫素對應之彩色濾光片或包含鈍化膜之濾鏡層112。又，濾鏡層112，亦可以包含用於覆蓋半導體基板111之第1面中未形成固態攝像元件11A之區域的遮光膜。
在濾鏡層112之於半導體基板111之相反側之面，使用接著層13將覆蓋玻璃12予以固定。接著層13係被形成於未形成有固態攝像元件11A之區域所對應之區域。
在半導體基板111之第1面側被形成電連接於固態攝像元件11A之電極焊墊114。電極焊墊114可使用例如銅(Cu)膜，但不限定於此，亦可使用鈦(Ti)膜或其他金屬膜或合金膜或彼等積層膜等各種導電體膜。
該電極焊墊114，係介由貫穿半導體基板111之貫穿電極116a，電連接於形成於半導體基板111之第2面側的配線圖案116。亦即，形成於半導體基板111之第1面的固態攝像元件11A，係介由形成於第1面側之未圖示之配線及電極焊墊114以及貫穿電極116a，被引出至半導體基板111之第2面側。又，配線圖案116係包含：信號線，其電連接於作為信號輸出入端子的錫球16；及接地線，電連接於作為接地端子(GND)的錫球16。
貫穿電極116a係被形成於：貫穿半導體基板111之第1導孔(亦稱為接觸孔)V1內，以及形成於濾鏡層112的第2導孔V2內，藉由第2導孔V2而被電連接於露出之電極焊墊114。於第1導孔V1內之表面被形成絕緣膜115，如此則，可以防止貫穿電極116a與半導體基板111之直接接觸。另外，絕緣膜115，亦延伸於半導體基板111之第2面上，如此則，可防止第2面側之配線圖案116與半導體基板111之直接接觸。
貫穿電極116a與配線圖案116，例如係由同一導電層形成。該導電層，可使用例如以Ti與Cu之積層膜作為底層膜的Cu膜。又，其膜厚可設為例如約5μm。
在形成有配線圖案116的半導體基板111之第2面側，被形成絕緣性焊錫阻劑118，在裝配錫球16時可以將液狀之焊錫自動對準於特定位置之同時，保護半導體基板111免於受熱影響。該焊錫阻劑118可使用例如具備感光性之環氧系列絕緣樹脂來形成。另外，於焊錫阻劑118被形成使錫球16被選擇性裝配用的第4導孔V4。
於半導體基板111之第2面上、亦即在半導體基板111與絕緣膜115之間，形成例如膜厚約100nm之由Ti膜構成之GND平面117，但不限定於此，亦可使用其他金屬膜或合金膜或彼等積層膜等各種導電體膜。如圖3所示，該GND平面117係至少被形成於：形成有包含固態攝像元件11A之半導體元件的第1面中之區域(元件區域)所對應之第2面中之區域AR。於第1實施形態中，例如於半導體基板111之第2面全體被形成。但是，於第1實施形態中，至少在形成於半導體基板111之第1導孔V1內部及周圍未被形成。換言之，GND平面117由第2面看時係開設有第1導孔V1。
另外，GND平面117，和形成於第2面側之配線圖案116之中之接地線，係介由GND接觸部116b被電連接。其中，GND接觸部116b可設為例如配線圖案116之中被形成於絕緣膜115內之部分。配線圖案116之中被形成於絕緣膜115內之部分係指，以露出GND平面117的方式而形成於絕緣膜115的第3導孔V3內之部分，但並不限定於此，例如亦可另外設置貫穿絕緣膜115之電極。又，於圖3，僅形成於第2面側之配線圖案116之接地線以實線表示，接地端子(GND)以外之端子所連接之信號線等配線則以虛線表示。
如上述說明，於半導體基板111之中形成有配線圖案116之側之面(第2面)全面形成被接地之導電層，如此則，即使基板本身為高電阻情況下，亦可確實將半導體基 板111保持於接地電位之同時，可防止半導體基板111與配線圖案116之間之產生寄生容量或寄生電阻。結果，可防止傳輸於配線圖案116之高頻信號之鈍化，可以實現能高速動作之半導體裝置11。另外，藉由在配線圖案116與半導體基板111之間配置保持於接地電位之導電層，如此則，來自半導體元件等之電氣雜訊可於導電層被切斷，不會輸入至配線圖案116，可實現高性能之半導體裝置11及相機模組1。
另外，GND平面117係使用例如至少可遮斷可視光之膜。藉由GND平面117之使用遮光性之膜，可防止來自半導體基板111背面(第2面)之光之介由半導體基板111，射入被形成於其上面(第1面)之固態攝像元件11A。因此，可迴避攝像圖像之產生重影、基板背面之配線圖案映入等問題之產生。另外，在薄的矽構成之半導體基板111，例如介由錫球16施加外來應力時，硬、脆之矽容易產生裂痕，但是本發明第1實施形態中構成為藉由成為GND平面117之金屬加以補強而成的複合體基板，可以獲得機械強度增強、信賴性高的半導體裝置11。
以下參照圖面說明本發明第1實施形態之相機模組1之製造方法。圖4A~4L表示本發明第1實施形態之相機模組1之製造方法之製程圖。又，於本發明第1實施形態之半導體裝置11之製造方法，係使用對1個晶圓製作複數個半導體裝置的所謂W-CSP(Wafer Level Chip Size Package)技術，但為說明簡便而著眼於1個晶片(半導體裝置11)。
本製造方法中，首先，於矽晶圓等之半導體基板111A之第1面側形成固態攝像元件11A之後，於第1面上依序形成配線、濾鏡層112及微透鏡陣列113，獲得如圖4A所示斷面構造。又，於圖4A，形成於半導體基板111之第1面上的配線之中之電極焊墊114之圖示被省略。
之後於濾鏡層112及形成有微透鏡陣列113之濾鏡層112上塗布感光性接著劑，實施圖案化而形成接著層13。又，該接著層13，除作為將覆蓋玻璃12固定於半導體基板111A(111)之接著部之機能以外，亦作為確保覆蓋玻璃12與微透鏡陣列113間之間隙用的間隔件之機能。藉由確保覆蓋玻璃12與微透鏡陣列113間之間隙，可以防止各微透鏡之聚光效果之損失。接著，在補強半導體基板111A之狀態將其與透明之覆蓋玻璃12貼合，獲得如圖4B所示斷面構造。
之後，如圖4C所示，由第2面側使半導體基板111A薄型化。該薄型化，必要時例如可組合研削、CMP(化學機械研磨法)、溼蝕刻來進行。薄型化後之半導體基板111之膜厚較好是設為大略50~100μm以下。如此則，可維持半導體裝置11之剛性之同時，可實現小型化及薄型化，另外，藉由如後述說明之GND平面117可有效排出儲存於半導體基板111中之電荷，結果，可提升半導體裝置11之特性。
之後，於薄型化之半導體基板111之第2面藉由微影成像技術形成阻劑R1。該阻劑R1係具備：在電極焊墊114所對應之位置、亦即在形成第1導孔V1之區域被形成有開口A1的圖案。之後，以阻劑R1為遮罩藉由RIE(Reactive Ion Etching)由第2面側進行半導體基板111之蝕刻，如圖4D所示，形成將半導體基板111由第1面貫穿至第2面之第1導孔V1。
之後，剝離阻劑R1之後，在形成有第1導孔V1之半導體基板111之第2面，藉由例如濺鍍法沈積Ti，如圖4E所示，形成覆蓋半導體基板111之第2面的金屬膜117A。此時，金屬膜117A之膜厚可設為例如約100nm。另外，沈積之金屬除Ti以外可使用Ta(鉭)、Cu(銅)、Ni(鎳)或Fe(鐵)等。但是有鑑於金屬對半導體基板111之影響，較好是使用Ti或Ta等對半導體基板111之影響輕微之金屬。另外，作為沈積之金屬使用可以矽化物化之金屬時，藉由半導體基板111與金屬膜117A間之界面之產生矽化物化反應，可使彼等間之電連接成為良好，可以有效介由GND平面117排除半導體基板111中之電荷。
之後，於被金屬膜117A覆蓋之半導體基板111之第2面側藉由微影成像技術形成阻劑R2。該阻劑R2係具備：在第1導孔V1及其周圍形成有開口A2的圖案。阻劑R2形成時之定位標記可使用例如被形成於第1導孔V1之金屬膜117A之凹形狀。之後，以阻劑R2為遮罩藉由溼蝕刻或RIE由第2面側進行金屬膜117A之蝕刻，如圖4F所示，除去第1導孔V1內及第1導孔V1周邊之金屬膜117A。
又，第1導孔V1周邊之除去部分，至少為可吸收形成阻劑R2時之曝光餘裕度之程度範圍內之金屬膜117A即可。另外，針對曝光餘裕度欲持有充分之餘裕度而除去第1導孔V1周邊之金屬膜117A時，可於形成第1導孔V1之前形成GND平面117。亦即，可將如圖4D所示第1導孔形成工程與圖4E~F所示GND平面形成工程之順序互換。此情況下，因為半導體基板111之第2面為平坦，開設金屬膜圖案用阻劑之開口時之位置偏移會有變大之情況，但是如上述說明，係在持有充分之餘裕度下除去第1導孔V1周邊之金屬膜117A，因此可防止GND平面117用之金屬膜117A殘留於第1導孔V1內部(特別是形成第2導孔V2之部分)，結果，可以迴避固態攝像元件11A之介由電極焊墊114之非期待性之接地。另外，在形成GND平面117後之工程中，可用於第1導孔V1周圍之GND平面117之開口之定位。
如上述說明，在半導體基板111之第2面形成GND平面117時，之後，於剝離阻劑R2後，如圖4G所示，係在形成有GND平面117之半導體基板111之第2面形成絕緣膜115A。絕緣膜115A可為SiO2 (矽氧化膜)或SiN(矽氮化膜)等之無機絕緣膜，或者絕緣樹脂等之有機絕緣膜。例如無機絕緣膜時可使用CVD(化學氣相成長法)等來形成絕緣膜115A，有機絕緣膜時可使用噴墨印刷技術等來形成絕緣膜115A。
之後，在形成有絕緣膜115A之半導體基板111之第2面側藉由微影成像技術形成阻劑R3。該阻劑R3係具備：在第1導孔V1底部形成有開口A3的圖案。另外，該圖案係包含之後被形成之配線圖案116中之接地線所對應之位置上被形成之開口A4。接著，以阻劑R3為遮罩藉由RIE進行絕緣膜115A(必要時可包含濾鏡層12)之蝕刻，如圖4H所示，在第1導孔V1底部形成第2導孔V2而使形成於半導體基板111之第1面側的電極焊墊114呈露出之同時，在配線圖案116中之接地線所對應之位置形成使GND平面117露出之第3導孔V3。如此則，可將和電極焊墊114取得電連接用之第2導孔V2以及和GND平面117取得電連接用之第3導孔V3以同一工程形成，可實現工程之簡單化。
之後，剝離阻劑R3之後，如圖41所示，在形成有第2導孔V2及第3導孔V3之半導體基板111之第2面形成配線圖案116。又，該配線圖案116亦包含形成於第1導孔V1內及第2導孔V2內之貫穿電極116a及形成於第3導孔V3內之GND接觸部116b。包含貫穿電極116a及GND接觸部116b之配線圖案116之形成，可使用例如電解鍍層法。具體言之為，首先，藉由濺鍍法於半導體基板111之第2面側全體，形成作為阻障金屬機能之Ti膜以及作為鍍層時之種層機能的Cu膜，接著，例如進行微影成像技術工程，於Cu膜上形成設有配線圖案116之圖案形狀的阻劑。之後，以該阻劑為遮罩，以Cu膜為種層藉由電解鍍層法成長Cu膜。之後，剝離遮罩之阻劑後，以電解鍍層法所形成之Cu膜作為遮罩，對種層之Cu膜及阻障金屬之Ti膜進行蝕刻實施圖案化。如此則，可形成Cu膜構成之配線圖案116。之後，在形成有配線圖案116之半導體基板111之第2面側塗布焊錫阻劑溶液，乾燥之後藉由微影成像技術工程及蝕刻工程實施圖案化，如圖4J所示，在裝配有錫球16之位置形成開設有第4導孔V4的焊錫阻劑118。
之後，使用習知之錫球裝配裝置，如圖4K所示，在形成有焊錫阻劑118之半導體基板111之第2面側之特定位置之第4導孔V4搭載錫球16。之後，使用例如鑽石切刀或雷射光針對半導體基板111沿著畫線區域SR(參照圖3)進行切割，如圖4L所示，於半導體晶圓上切片成為2次元陣列形狀之半導體裝置11。之後，將切片完成之半導體裝置11連同透鏡單元14嵌入相機框體15，製造具備如圖1所示斷面構造之相機模組1。
如上述說明，本發明第1實施形態之半導體裝置11係具備：半導體基板111，係於第1面形成有作為半導體元件之固態攝像元件11A；配線圖案116，被形成於半導體基板111之第1面之相反側的第2面側，至少一部分包含有接地線；貫穿電極116a，半導體基板111由第1面貫穿至第2面，用於電連接固態攝像元件11A與配線圖案116；及GND平面117，被形成於半導體基板111之第2面與配線圖案116延伸之面(或層)之間，被電連接於半導體基板111及配線圖案116之接地線。亦即，於本發明第1實施形態之中，在半導體基板111與配線圖案116之間存在作為遮光膜機能之接地電位的GND平面117。因此，可抑制半導體基板111與配線圖案116間之容量耦合之同時，可防止來自半導體基板111背面(第2面)之光介由半導體基板111射入其上面(第1面)被形成之固態攝像元件11A。結果，可迴避重影或配線圖案等之映入，可實現能高速動作之半導體裝置11及相機模組1。
(變形例1-1)
又，於上述第1實施形態中，藉由微影成像技術進行GND平面117之圖案化時曝光使用之定位標記，係使用第1導孔V1部分之形狀。但是，亦可如圖5所示，於GND平面117(金屬膜117A)設置定位用開口117a。以下參照圖面說明此情況下之本發明第1實施形態之變形例1-1。
圖5表示本發明第1實施形態之變形例1-1之半導體裝置11-1之概略構造之上視圖。又，為說明之方便，於圖5省略半導體裝置11-1之一部分層之圖示。如圖5所示，變形例1-1之半導體裝置11-1，係於半導體基板111，在定位用標記(未圖示)被設置之位置所對應之GND平面117之特定區域，形成開口117a用於使下層之絕緣膜115露出。
如上述說明，半導體元件之固態攝像元件11A，係被形成於切片後之半導體基板111之第1面之外緣起特定距離內側之元件區域。於變形例1-1，由GND平面117中之半導體基板111之第2面側看時，係在和元件區域對應之區域AR之特定區域被形成開口117a。例如將開口117a形成於半導體裝置11-1切片時之切斷部分之切割線上。如此則，可迴避配線圖案116與半導體基板111之容量耦合之增加之同時，可將設於半導體基板111之定位用標記利用於曝光。
該開口117a，例如於形成金屬膜117A時可藉由剝離法予以形成。亦即，於變形例1-1中，係在半導體基板111之第2面形成金屬膜117A之前，切片時被切斷之畫線區域SR上藉由微影成像技術法形成阻劑。之後，在形成有阻劑之半導體基板111之第2面，使用例如濺鍍法沈積Ti等之金屬而形成金屬膜117A，接著，使用丙酮等之剝離液除去阻劑，而同時除去(剝離)阻劑上之金屬膜117A之一部分。如此則，可於畫線區域SR上形成開口117a。
又，如變形例1-1所示，在對GND平面117實施圖案化前之金屬膜117A形成開口117a，如此則，可依據開口117a正確進行曝光時之定位。可縮小對GND平面117實施圖案化形成金屬膜117A時之第1導孔V1周圍之曝光餘裕度。另外，其他之構成、製造方法及效果均和上述實施形態同樣，因此省略詳細說明。
(變形例1-2)
又，於上述第1實施形態中係除去第1導孔V1內之金屬膜117A。亦即，在第1導孔V1內未存在GND平面117之構成。但是，亦可如圖6所示，使GND平面117延伸至第1導孔V1內之側面。換言之，GND平面117可以包含被形成於第1導孔V1內之側面的導孔內GND平面117b。以下參照圖面說明此情況下之本發明第1實施形態之變形例1-2。
圖6表示本發明第1實施形態之變形例1-2之半導體裝置11-2之概略構造之斷面圖。又，為說明之方便，於圖6表示和圖3之線A-A對應之部分(線B-B)之半導體裝置11-2之斷面。如圖6所示，變形例1-2之半導體裝置11-2，係具備由半導體基板111之第2面至第1導孔V1之側面延伸存在之GND平面117及導孔內GND平面117b。如此則，可防止第1導孔V1內之貫穿電極116a與半導體基板111之容量耦合，結果，更能提升半導體裝置11-2之特性。
又，於變形例1-2，亦和上述變形例1-1同樣，可於畫線區域SR之GND平面117設置開口117a。另外，其他之構成、製造方法及效果均和上述實施形態或其之變形例同樣，因此省略詳細說明。
(變形例1-3)
又，於上述實施形態及其之變形例，由金屬膜117A對GND平面117之圖案化時係使用微影成像技術工程及蝕刻工程。但並不限定於此，例如亦可使用剝離法形成GND平面117。以下參照圖面說明此情況下之本發明第1實施形態之變形例1-3。但是，和上述第1實施形態同樣之工程係引用其，並省略其詳細說明。
圖7A~7D表示變形例1-3之相機模組1之製造方法之製程圖。本製造方法中，首先，經由和上述使用圖4A~4C說明之工程同樣之工程，將形成有固態攝像元件11A、濾鏡層112、微透鏡陣列113及電極焊墊114的半導體基板111A由第2面側起實施薄型化。又，於半導體基板111係使用接著層13將覆蓋玻璃12予以貼合。
之後，如圖7A所示，於薄型化之半導體基板111之第2面藉由微影成像技術形成阻劑R21。該阻劑R21，係具有將GND平面117之圖案形狀設為正型的負型之圖案形狀。亦即，阻劑R21至少被形成於形成有第1導孔V1之區域。但是，變形例1-3之中，阻劑R21較好是以半導體基板111之第2面為基準，具備所謂逆推拔形狀之斷面。該逆推拔形狀可藉由例如曝光時之焦點深度或曝光光量之調整來實現。
接著，在形成有阻劑R21之半導體基板111之第2面藉由例如濺鍍法沈積Ti，如圖7B所示，在半導體基板111之第2面上及阻劑R21上面上形成金屬膜117B。接著，使用丙酮等之剝離液除去阻劑R21。如此則，可同時除去(剝離)阻劑R21上之金屬膜117B以及阻劑R21。結果，如圖7C所示，可使被圖案化於半導體基板111之第2面的GND平面117殘留。此時，藉由設定阻劑R21之斷面形狀成為逆推拔形狀，則可將GND平面117之端部設為推拔形狀。如此則，可防止半導體裝置11之動作時電場集中於GND平面117之端部，結果，可提升包含半導體裝置11之耐壓特性的電氣特性。
之後，於形成有GND平面117之半導體基板111之第2面藉由微影成像技術形成阻劑R22。該阻劑R22，係和上述第1實施形態使用圖4D說明之阻劑R1同樣，具備：在電極焊墊114所對應之位置、亦即在形成第1導孔V1之區域被形成有開口A22的圖案。之後，以阻劑R22為遮罩藉由RIE由第2面側進行半導體基板111之蝕刻，如圖7D所示，形成將半導體基板111由第1面貫穿至第2面之第1導孔V1。
之後，經由和上述使用圖4E~4H說明之工程同樣之工程，針對在濾鏡層112形成有第2導孔V2之同時，形成有第3導孔V3之絕緣膜115、包含貫穿電極116a及GND接觸部116b的配線圖案116，形成有焊錫阻劑118及錫球16的半導體基板111予以切片化。之後，和上述第1實施形態同樣，將切片後之半導體裝置11連同透鏡單元14嵌入相機框體15，而製造具有如圖1所示斷面形狀之相機模組1。
如上述說明，於變形例1-3，係在半導體基板111之第2面被金屬膜117B覆蓋之前，形成對GND平面117實施圖案化用之阻劑R21，因此可以容易正確進行曝光時之定位。結果，可以較半導體基板111之第2面覆蓋更大範圍的方式形成GND平面117，更能提升半導體裝置11之特性。
另外，其他構成、製造方法及效果，係和上述實施形態或其之變形例同樣，因此省略詳細說明。
(第2實施形態)
以下參照圖面詳細說明本發明第2實施形態之半導體裝置、相機模組及半導體裝置之製造方法。又，以下說明之中，和上述實施形態或其變形例同一構成原則上附加同一符號，並省略重複說明。
圖8表示本發明第2實施形態之半導體裝置21之概略構造之上視圖。圖9表示圖8之半導體裝置21之概略構造之B-B斷面圖。但是，為方便說明，於圖9省略半導體裝置21之一部分層之圖示。
如圖8、9所示，半導體裝置21之GND平面217，並未被形成於自切片時之切割面與第2面所形成之邊起具有特定距離寬度的畫線區域SR。換言之，GND平面217，係以覆蓋切片後之半導體基板111之第2面周圍之邊起隔開特定距離的區域AR內的方式被形成。
藉由設為此一構成，於第2實施形態中可迴避切割時GND平面217之剝落。結果，可防止GND平面217之剝離引起之漏電流之產生或裝置特性之劣化。另外，其他構成、製造方法及效果，係和上述實施形態或其之變形例同樣，因此省略詳細說明。
(第3實施形態)
以下參照圖面詳細說明本發明第3實施形態之半導體裝置、相機模組及半導體裝置之製造方法。又，以下說明之中，和上述實施形態或其變形例同一構成原則上附加同一符號，並省略重複說明。
圖10表示本發明第3實施形態之半導體裝置31之概略構造之上視圖。圖11表示圖10之半導體裝置31之概略構造之C-C斷面圖。但是，為方便說明，於圖11省略半導體裝置31之一部分層之圖示。
如圖10、11所示，半導體裝置31之GND平面317，係在半導體基板111之第2面與切片時之切割面所形成之邊起隔開特定距離的區域AR內，在區域AR之端相較於連結被以線狀配列之更靠近第1導孔V1之第2面之中心之端的連結線，以覆蓋該連結線之更內側區域的方式被形成。另外，GND平面317，並未被形成於切片時被切割之畫線區域SR以及包圍複數個配列之第1導孔V1的帶狀導孔配列區域VR。
如上述說明，於第3實施形態，貫穿電極116a係近接半導體基板111之第2面周圍之邊之其中一個以上之邊被配列，GND平面317，由半導體基板111之第2面側看時，相較於連結貫穿電極116a之第2面之中心側之端的連結線，係被形成於該連結線之更內側區域。如此則，第3實施形態中可迴避切割時GND平面317之剝離之同時，可以簡化GND平面317之圖案化形狀，可實現半導體裝置31之設計之容易化及製造之簡化。另外，其他構成、製造方法及效果，係和上述實施形態或其之變形例同樣，因此省略詳細說明。
如上述說明，依據本發明實施形態，可以提供能迴避重影或配線圖案等之映射之同時，可以高速動作的半導體裝置及相機模組，以及可以高速動作之半導體裝置之製造方法。
另外，可由業界容易導出其他效果及變形例。因此，本發明不限定於上述特定或代表性之實施形態，因此，在不脫離申請專利範圍及其均等物所定義之總括之發明概念之精神或範圍內可做各種變更實施。
(發明效果)
依據本發明之實施形態，可以提供能迴避重影或配線圖案等之映射之同時，可以高速動作的半導體裝置及相機模組，以及可以高速動作之半導體裝置之製造方法。
11．．．半導體裝置
12．．．覆蓋玻璃
13．．．接著層
16．．．錫球
111．．．半導體基板
112．．．濾鏡層
113．．．微透鏡陣列
114．．．電極焊墊
115．．．絕緣膜
116．．．配線圖案
117．．．GND平面
118．．．焊錫阻劑
11A．．．固態攝像元件
V1．．．第1導孔
V2．．．第2導孔
V3．．．第3導孔
V4．．．第4導孔
116a．．．貫穿電極
116b．．．GND接觸部
SR．．．畫線區域
AR．．．區域
圖1表示本發明第1實施形態之相機模組之概略構造之模式斷面圖。
圖2表示本發明第1實施形態之半導體裝置之概略構造之模式斷面圖。
圖3表示本發明第1實施形態之半導體裝置之概略構造之上視圖。
圖4A表示本發明第1實施形態之相機模組之製造方法之製程圖(之1)。
圖4B表示本發明第1實施形態之相機模組之製造方法之製程圖(之2)。
圖4C表示本發明第1實施形態之相機模組之製造方法之製程圖(之3)。
圖4D表示本發明第1實施形態之相機模組之製造方法之製程圖(之4)。
圖4E表示本發明第1實施形態之相機模組之製造方法之製程圖(之5)。
圖4F表示本發明第1實施形態之相機模組之製造方法之製程圖(之6)。
圖4G表示本發明第1實施形態之相機模組之製造方法之製程圖(之7)。
圖4H表示本發明第1實施形態之相機模組之製造方法之製程圖(之8)。
圖4I表示本發明第1實施形態之相機模組之製造方法之製程圖(之9)。
圖4J表示本發明第1實施形態之相機模組之製造方法之製程圖(之10)。
圖4K表示本發明第1實施形態之相機模組之製造方法之製程圖(之11)。
圖4L表示本發明第1實施形態之相機模組之製造方法之製程圖(之12)。
圖5表示本發明第1實施形態之變形例1-1之半導體裝置之概略構造之上視圖。
圖6表示本發明第1實施形態之變形例1-2之半導體裝置之概略構造之斷面圖。
圖7A表示本發明第1實施形態之變形例1-3之相機模組之製造方法之製程圖(之1)。
圖7B表示本發明第1實施形態之變形例1-3之相機模組之製造方法之製程圖(之2)。
圖7C表示本發明第1實施形態之變形例1-3之相機模組之製造方法之製程圖(之3)。
圖7D表示本發明第1實施形態之變形例1-3之相機模組之製造方法之製程圖(之4)。
圖8表示本發明第2實施形態之半導體裝置之概略構造之上視圖。
圖9表示圖8之半導體裝置之概略構造之B-B斷面圖。
圖10表示本發明第3實施形態之半導體裝置之概略構造之上視圖。
圖11表示圖10之半導體裝置之概略構造之C-C斷面圖。
11．．．半導體裝置
12．．．覆蓋玻璃
13．．．接著層
16．．．錫球
111．．．半導體基板
112．．．濾鏡層
113．．．微透鏡陣列
114．．．電極焊墊
115．．．絕緣膜
116．．．配線圖案
117．．．GND平面
118．．．焊錫阻劑
11A．．．固態攝像元件
V1．．．第1導孔
V2．．．第2導孔
V3．．．第3導孔
V4．．．第4導孔
116a．．．貫穿電極
116b．．．GND接觸部
SR．．．畫線區域
AR．．．區域

Claims (15)

  1. 一種半導體裝置，其特徵為具備：半導體基板，於第1面具備半導體元件；配線圖案，位於上述半導體基板之和上述第1面為相反側的第2面側，至少一部分包含有接地線；貫穿電極，將上述半導體基板由上述第1面至上述第2面予以貫穿，將上述半導體元件與上述配線圖案予以電連接；及金屬膜，位於上述半導體基板之上述第2面與上述配線圖案延伸之面之間，被電連接於上述接地線；上述金屬膜，係於上述半導體基板之上述第2面上之全面被形成。
  2. 如申請專利範圍第1項之半導體裝置，其中上述貫穿電極，係位於貫穿上述半導體基板的接觸孔內；上述金屬膜，由上述第2面側看時係設有上述接觸孔之開口。
  3. 如申請專利範圍第2項之半導體裝置，其中上述開口，係由上述金屬膜之緣部呈連續。
  4. 如申請專利範圍第1項之半導體裝置，其中上述貫穿電極，係位於貫穿上述半導體基板的接觸孔內；上述金屬膜，由上述第2面側看時係覆蓋該第2面及上述接觸孔之內側面。
  5. 如申請專利範圍第1項之半導體裝置，其中上述貫穿電極，係位於貫穿上述半導體基板的接觸孔內；上述接觸孔，由上述第2面側看時係配列於該第2面之外緣附近；上述金屬膜之端，由上述第2面側看時係位於較上述接觸孔之配列更內側。
  6. 一種相機模組，其特徵為具備：半導體裝置，其具備：半導體基板，於第1面具備半導體元件；配線圖案，位於上述半導體基板之和上述第1面為相反側的第2面側，至少一部分包含有接地線；貫穿電極，將上述半導體基板由上述第1面至上述第2面予以貫穿，將上述半導體元件與上述配線圖案予以電連接；及金屬膜，位於上述半導體基板之上述第2面與上述配線圖案延伸之面之間，被電連接於上述接地線；透鏡單元，配設於上述半導體裝置之上述第1面側；及框體，用於保持上述半導體裝置及上述透鏡單元；上述金屬膜，係於上述半導體基板之上述第2面上之全面被形成。
  7. 如申請專利範圍第6項之相機模組，其中上述貫穿電極，係位於貫穿上述半導體基板的接觸孔內；上述金屬膜，由上述第2面側看時係設有上述接觸孔 之開口。
  8. 如申請專利範圍第7項之相機模組，其中上述開口，係由上述金屬膜之緣部呈連續。
  9. 如申請專利範圍第6項之相機模組，其中上述貫穿電極，係位於貫穿上述半導體基板的接觸孔內上述金屬膜，由上述第2面側看時係覆蓋該第2面及上述接觸孔之內側面。
  10. 如申請專利範圍第6項之相機模組，其中上述貫穿電極，係位於貫穿上述半導體基板的接觸孔內；上述接觸孔，由上述第2面側看時係配列於該第2面之外緣附近；上述金屬膜之端，由上述第2面側看時係位於較上述接觸孔之配列更內側。
  11. 一種半導體裝置之製造方法，其特徵為包含：於第1面具備半導體元件之半導體基板形成接觸孔，該接觸孔係自上述第1面貫穿至和該第1面為相反側的第2面；於上述半導體基板之上述第2面側，形成被電連接於該半導體基板的金屬膜；形成使上述金屬膜之一部分露出之同時，覆蓋該金屬膜的絕緣膜；於上述絕緣膜上形成配線圖案之同時，於上述接觸孔 內形成貫穿上述半導體基板的貫穿電極，該配線圖案係至少包含介由上述露出部分電連接於上述金屬膜之接地線者；上述金屬膜，係於上述半導體基板之上述第2面上之全面被形成。
  12. 如申請專利範圍第11項之半導體裝置之製造方法，其中上述金屬膜，由上述第2面側看時係以開口設置上述接觸孔的方式被形成。
  13. 如申請專利範圍第12項之半導體裝置製造方法，其中上述開口，係由上述金屬膜之緣部呈連續。
  14. 如申請專利範圍第11項之半導體裝置之製造方法，其中上述金屬膜，由上述第2面側看時係以覆蓋該第2面及上述接觸孔之內側面的方式被形成。
  15. 如申請專利範圍第11項之半導體裝置，其中上述接觸孔，由上述第2面側看時係配列於該第2面之外緣附近；上述金屬膜之端，由上述第2面側看時係位於較上述接觸孔之配列更內側而被形成。
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