TWI424091B - 用於銅及銅／鎳層之穩定蝕刻溶液 - Google Patents
用於銅及銅／鎳層之穩定蝕刻溶液 Download PDFInfo
- Publication number
- TWI424091B TWI424091B TW095129626A TW95129626A TWI424091B TW I424091 B TWI424091 B TW I424091B TW 095129626 A TW095129626 A TW 095129626A TW 95129626 A TW95129626 A TW 95129626A TW I424091 B TWI424091 B TW I424091B
- Authority
- TW
- Taiwan
- Prior art keywords
- etching
- weight
- layer
- etching solution
- amount
- Prior art date
Links
- 238000005530 etching Methods 0.000 claims description 87
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 43
- 239000010949 copper Substances 0.000 claims description 37
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 36
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 28
- 229910052802 copper Inorganic materials 0.000 claims description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 24
- 229910052759 nickel Inorganic materials 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000000654 additive Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000004094 surface-active agent Substances 0.000 claims description 3
- 239000000080 wetting agent Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 2
- 230000006641 stabilisation Effects 0.000 claims 1
- 238000011105 stabilization Methods 0.000 claims 1
- 239000000243 solution Substances 0.000 description 63
- 239000000203 mixture Substances 0.000 description 9
- 238000007747 plating Methods 0.000 description 7
- 238000003421 catalytic decomposition reaction Methods 0.000 description 4
- 229910001431 copper ion Inorganic materials 0.000 description 4
- CABMTIJINOIHOD-UHFFFAOYSA-N 2-[4-methyl-5-oxo-4-(propan-2-yl)-4,5-dihydro-1H-imidazol-2-yl]quinoline-3-carboxylic acid Chemical compound N1C(=O)C(C(C)C)(C)N=C1C1=NC2=CC=CC=C2C=C1C(O)=O CABMTIJINOIHOD-UHFFFAOYSA-N 0.000 description 3
- WJJMNDUMQPNECX-UHFFFAOYSA-N Dipicolinic acid Natural products OC(=O)C1=CC=CC(C(O)=O)=N1 WJJMNDUMQPNECX-UHFFFAOYSA-N 0.000 description 3
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 229910001453 nickel ion Inorganic materials 0.000 description 3
- 239000003381 stabilizer Substances 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- 229910002482 Cu–Ni Inorganic materials 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000002671 adjuvant Substances 0.000 description 2
- 229910002065 alloy metal Inorganic materials 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910018054 Ni-Cu Inorganic materials 0.000 description 1
- 229910018481 Ni—Cu Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/28—Acidic compositions for etching iron group metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
- C01B15/01—Hydrogen peroxide
- C01B15/037—Stabilisation by additives
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102005038414A DE102005038414A1 (de) | 2005-08-12 | 2005-08-12 | Stabilisierte Ätzlösungen zum Ätzen von Cu- und Cu/Ni-Schicht |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200718806A TW200718806A (en) | 2007-05-16 |
| TWI424091B true TWI424091B (zh) | 2014-01-21 |
Family
ID=37113846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095129626A TWI424091B (zh) | 2005-08-12 | 2006-08-11 | 用於銅及銅／鎳層之穩定蝕刻溶液 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US8652972B2 (enExample) |
| EP (1) | EP1917381B1 (enExample) |
| JP (1) | JP5101505B2 (enExample) |
| KR (1) | KR101339492B1 (enExample) |
| CN (1) | CN101238242B (enExample) |
| DE (1) | DE102005038414A1 (enExample) |
| IL (1) | IL188939A (enExample) |
| TW (1) | TWI424091B (enExample) |
| WO (1) | WO2007020206A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102687251B (zh) | 2009-12-15 | 2016-02-17 | 三菱瓦斯化学株式会社 | 蚀刻液及使用其的半导体装置的制造方法 |
| CN102696097B (zh) * | 2009-12-25 | 2015-08-05 | 三菱瓦斯化学株式会社 | 蚀刻液及使用其的半导体装置的制造方法 |
| KR101825493B1 (ko) | 2010-04-20 | 2018-02-06 | 삼성디스플레이 주식회사 | 금속 배선용 식각액 조성물 및 이를 이용한 박막 트랜지스터 표시판의 제조방법 |
| CN102230178B (zh) * | 2011-04-29 | 2012-09-05 | 西安东旺精细化学有限公司 | 镍或镍/铜合金的蚀刻液组合物 |
| KR101812085B1 (ko) * | 2013-05-02 | 2017-12-27 | 후지필름 가부시키가이샤 | 에칭액 및 에칭액의 키트, 이를 이용한 에칭 방법 및 반도체 기판 제품의 제조 방법 |
| CN110147008B (zh) * | 2013-07-03 | 2022-03-22 | 东友精细化工有限公司 | 制造液晶显示器用阵列基板的方法 |
| CN104513982B (zh) * | 2013-09-27 | 2019-01-22 | 东友精细化工有限公司 | 用于液晶显示器的阵列基板的制造方法 |
| JP6657770B2 (ja) * | 2014-11-27 | 2020-03-04 | 三菱瓦斯化学株式会社 | 液体組成物およびこれを用いたエッチング方法 |
| KR20160120891A (ko) | 2015-04-09 | 2016-10-19 | 삼성전자주식회사 | 반도체 장치 |
| KR102479444B1 (ko) * | 2015-12-30 | 2022-12-21 | 삼영순화(주) | 식각액 조성물 및 이를 이용한 반도체 장치의 제조 방법 |
| KR101988817B1 (ko) * | 2016-04-27 | 2019-06-12 | 산요가세이고교 가부시키가이샤 | 에칭액 및 전자 기판의 제조 방법 |
| US10316414B2 (en) * | 2016-06-08 | 2019-06-11 | United Technologies Corporation | Removing material with nitric acid and hydrogen peroxide solution |
| CN106757029A (zh) * | 2017-02-08 | 2017-05-31 | 昆山艾森半导体材料有限公司 | 一种侧蚀小的铜蚀刻液 |
| CN108930037B (zh) * | 2017-05-22 | 2021-02-26 | 东友精细化工有限公司 | 金属膜蚀刻液组合物及利用其的导电图案形成方法 |
| WO2019045129A1 (ko) * | 2017-08-29 | 2019-03-07 | (주)예스바이오골드 | 치과용 지르코니아 세라믹의 표면 에칭제 조성물 및 이를 이용한 치아수복물의 제조방법 |
| WO2019135965A1 (en) * | 2018-01-08 | 2019-07-11 | Arch Chemicals, Inc. | Water treatment composition |
| CN111519190B (zh) * | 2020-05-27 | 2022-03-18 | 湖北兴福电子材料有限公司 | 一种铜制程面板中稳定蚀刻锥角的蚀刻液及稳定方法 |
| WO2022071069A1 (ja) | 2020-09-29 | 2022-04-07 | 三菱瓦斯化学株式会社 | 半導体基板洗浄用組成物及び洗浄方法 |
| CN112680229A (zh) * | 2021-01-29 | 2021-04-20 | 深圳市百通达科技有限公司 | 一种湿电子化学的硅基材料蚀刻液及其制备方法 |
| CN116005158A (zh) * | 2022-12-29 | 2023-04-25 | 江阴润玛电子材料股份有限公司 | 一种集成电路用铜镍腐蚀液及其制备方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3341384A (en) * | 1964-05-04 | 1967-09-12 | Allied Chem | Dissolution of metal with acidified hydrogen peroxide containing dibasic acid |
| TWI231316B (en) * | 1999-03-17 | 2005-04-21 | Shipley Co Llc | Micro-etch solution for producing metal surface topography |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5419381B2 (enExample) | 1972-04-13 | 1979-07-14 | ||
| US4059678A (en) | 1973-02-02 | 1977-11-22 | Fmc Corporation | Stabilization of iron-containing acidic hydrogen peroxide solutions |
| JPS50140333A (enExample) | 1974-04-27 | 1975-11-11 | ||
| SU929738A1 (ru) | 1980-10-27 | 1982-05-23 | Предприятие П/Я М-5191 | Раствор дл размерного травлени молибдена и меди |
| JPS6058795B2 (ja) | 1980-11-25 | 1985-12-21 | シャープ株式会社 | Ｎｉ薄膜エツチング方法 |
| SU950799A1 (ru) | 1980-12-22 | 1982-08-15 | Предприятие П/Я Г-4377 | Раствор дл травлени металлов |
| GB8925376D0 (en) | 1989-11-09 | 1989-12-28 | Interox Chemicals Ltd | Stabilisation of concentrated hydrogen peroxide solutions |
| JP2884935B2 (ja) * | 1992-08-17 | 1999-04-19 | 日立化成工業株式会社 | ニッケル又はニッケル合金のエッチング液及びこのエッチング液を用いる方法並びにこのエッチング液を用いて配線板を製造する方法 |
| JPH06322559A (ja) * | 1993-05-07 | 1994-11-22 | Okuno Chem Ind Co Ltd | ニッケル又はニッケル合金皮膜用剥離剤 |
| JPH0718472A (ja) * | 1993-07-06 | 1995-01-20 | Ebara Yuujiraito Kk | 銅・銅合金材のための浸漬エッチング液 |
| JP3711565B2 (ja) * | 1994-02-24 | 2005-11-02 | 日立化成工業株式会社 | エッチング液中の塩素イオンの除去方法並びにこのエッチング液を用いて配線板を製造する方法 |
| JPH08311663A (ja) * | 1995-05-18 | 1996-11-26 | Merutetsukusu Kk | ニッケル被膜またはニッケル合金被膜の剥離液 |
| US5897375A (en) * | 1997-10-20 | 1999-04-27 | Motorola, Inc. | Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture |
| JP2004043895A (ja) * | 2002-07-12 | 2004-02-12 | Mitsubishi Chemicals Corp | 銅エッチング液 |
-
2005
- 2005-08-12 DE DE102005038414A patent/DE102005038414A1/de not_active Withdrawn
-
2006
- 2006-08-07 EP EP06764305.6A patent/EP1917381B1/de active Active
- 2006-08-07 JP JP2008525563A patent/JP5101505B2/ja not_active Expired - Fee Related
- 2006-08-07 US US12/063,033 patent/US8652972B2/en not_active Expired - Fee Related
- 2006-08-07 WO PCT/EP2006/065104 patent/WO2007020206A1/de not_active Ceased
- 2006-08-07 CN CN2006800285160A patent/CN101238242B/zh active Active
- 2006-08-07 KR KR1020087003474A patent/KR101339492B1/ko not_active Expired - Fee Related
- 2006-08-11 TW TW095129626A patent/TWI424091B/zh active
-
2008
- 2008-01-22 IL IL188939A patent/IL188939A/en active IP Right Grant
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3341384A (en) * | 1964-05-04 | 1967-09-12 | Allied Chem | Dissolution of metal with acidified hydrogen peroxide containing dibasic acid |
| TWI231316B (en) * | 1999-03-17 | 2005-04-21 | Shipley Co Llc | Micro-etch solution for producing metal surface topography |
Also Published As
| Publication number | Publication date |
|---|---|
| IL188939A0 (en) | 2008-04-13 |
| JP5101505B2 (ja) | 2012-12-19 |
| CN101238242A (zh) | 2008-08-06 |
| IL188939A (en) | 2013-12-31 |
| US20100304573A1 (en) | 2010-12-02 |
| EP1917381B1 (de) | 2013-04-10 |
| KR101339492B1 (ko) | 2013-12-11 |
| WO2007020206A1 (de) | 2007-02-22 |
| EP1917381A1 (de) | 2008-05-07 |
| TW200718806A (en) | 2007-05-16 |
| CN101238242B (zh) | 2011-05-04 |
| JP2009505388A (ja) | 2009-02-05 |
| KR20080042820A (ko) | 2008-05-15 |
| DE102005038414A1 (de) | 2007-02-15 |
| US8652972B2 (en) | 2014-02-18 |
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