CN101238242B - 用于铜和铜/镍层的稳定化的蚀刻溶液 - Google Patents

用于铜和铜/镍层的稳定化的蚀刻溶液 Download PDF

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Publication number
CN101238242B
CN101238242B CN2006800285160A CN200680028516A CN101238242B CN 101238242 B CN101238242 B CN 101238242B CN 2006800285160 A CN2006800285160 A CN 2006800285160A CN 200680028516 A CN200680028516 A CN 200680028516A CN 101238242 B CN101238242 B CN 101238242B
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etching
layers
copper
etching solution
weight
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Chinese (zh)
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CN101238242A (zh
Inventor
M·弗吕格
R·梅利斯
T·戈尔策洛伊希特尔
M·施瓦格尔
R·厄斯滕
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BASF SE
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BASF SE
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/28—Acidic compositions for etching iron group metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
    • C01B15/01—Hydrogen peroxide
    • C01B15/037—Stabilisation by additives
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2006800285160A 2005-08-12 2006-08-07 用于铜和铜/镍层的稳定化的蚀刻溶液 Active CN101238242B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102005038414.5 2005-08-12
DE102005038414A DE102005038414A1 (de) 2005-08-12 2005-08-12 Stabilisierte Ätzlösungen zum Ätzen von Cu- und Cu/Ni-Schicht
PCT/EP2006/065104 WO2007020206A1 (de) 2005-08-12 2006-08-07 Stabilisierte ätzlösungen für cu- und cu/ni-schichten

Publications (2)

Publication Number Publication Date
CN101238242A CN101238242A (zh) 2008-08-06
CN101238242B true CN101238242B (zh) 2011-05-04

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CN2006800285160A Active CN101238242B (zh) 2005-08-12 2006-08-07 用于铜和铜/镍层的稳定化的蚀刻溶液

Country Status (9)

Country Link
US (1) US8652972B2 (enExample)
EP (1) EP1917381B1 (enExample)
JP (1) JP5101505B2 (enExample)
KR (1) KR101339492B1 (enExample)
CN (1) CN101238242B (enExample)
DE (1) DE102005038414A1 (enExample)
IL (1) IL188939A (enExample)
TW (1) TWI424091B (enExample)
WO (1) WO2007020206A1 (enExample)

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CN102687251B (zh) 2009-12-15 2016-02-17 三菱瓦斯化学株式会社 蚀刻液及使用其的半导体装置的制造方法
CN102696097B (zh) * 2009-12-25 2015-08-05 三菱瓦斯化学株式会社 蚀刻液及使用其的半导体装置的制造方法
KR101825493B1 (ko) 2010-04-20 2018-02-06 삼성디스플레이 주식회사 금속 배선용 식각액 조성물 및 이를 이용한 박막 트랜지스터 표시판의 제조방법
CN102230178B (zh) * 2011-04-29 2012-09-05 西安东旺精细化学有限公司 镍或镍/铜合金的蚀刻液组合物
KR101812085B1 (ko) * 2013-05-02 2017-12-27 후지필름 가부시키가이샤 에칭액 및 에칭액의 키트, 이를 이용한 에칭 방법 및 반도체 기판 제품의 제조 방법
CN110147008B (zh) * 2013-07-03 2022-03-22 东友精细化工有限公司 制造液晶显示器用阵列基板的方法
CN104513982B (zh) * 2013-09-27 2019-01-22 东友精细化工有限公司 用于液晶显示器的阵列基板的制造方法
JP6657770B2 (ja) * 2014-11-27 2020-03-04 三菱瓦斯化学株式会社 液体組成物およびこれを用いたエッチング方法
KR20160120891A (ko) 2015-04-09 2016-10-19 삼성전자주식회사 반도체 장치
KR102479444B1 (ko) * 2015-12-30 2022-12-21 삼영순화(주) 식각액 조성물 및 이를 이용한 반도체 장치의 제조 방법
KR101988817B1 (ko) * 2016-04-27 2019-06-12 산요가세이고교 가부시키가이샤 에칭액 및 전자 기판의 제조 방법
US10316414B2 (en) * 2016-06-08 2019-06-11 United Technologies Corporation Removing material with nitric acid and hydrogen peroxide solution
CN106757029A (zh) * 2017-02-08 2017-05-31 昆山艾森半导体材料有限公司 一种侧蚀小的铜蚀刻液
CN108930037B (zh) * 2017-05-22 2021-02-26 东友精细化工有限公司 金属膜蚀刻液组合物及利用其的导电图案形成方法
WO2019045129A1 (ko) * 2017-08-29 2019-03-07 (주)예스바이오골드 치과용 지르코니아 세라믹의 표면 에칭제 조성물 및 이를 이용한 치아수복물의 제조방법
WO2019135965A1 (en) * 2018-01-08 2019-07-11 Arch Chemicals, Inc. Water treatment composition
CN111519190B (zh) * 2020-05-27 2022-03-18 湖北兴福电子材料有限公司 一种铜制程面板中稳定蚀刻锥角的蚀刻液及稳定方法
WO2022071069A1 (ja) 2020-09-29 2022-04-07 三菱瓦斯化学株式会社 半導体基板洗浄用組成物及び洗浄方法
CN112680229A (zh) * 2021-01-29 2021-04-20 深圳市百通达科技有限公司 一种湿电子化学的硅基材料蚀刻液及其制备方法
CN116005158A (zh) * 2022-12-29 2023-04-25 江阴润玛电子材料股份有限公司 一种集成电路用铜镍腐蚀液及其制备方法

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Also Published As

Publication number Publication date
IL188939A0 (en) 2008-04-13
JP5101505B2 (ja) 2012-12-19
CN101238242A (zh) 2008-08-06
IL188939A (en) 2013-12-31
US20100304573A1 (en) 2010-12-02
EP1917381B1 (de) 2013-04-10
KR101339492B1 (ko) 2013-12-11
WO2007020206A1 (de) 2007-02-22
TWI424091B (zh) 2014-01-21
EP1917381A1 (de) 2008-05-07
TW200718806A (en) 2007-05-16
JP2009505388A (ja) 2009-02-05
KR20080042820A (ko) 2008-05-15
DE102005038414A1 (de) 2007-02-15
US8652972B2 (en) 2014-02-18

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