KR101339492B1 - Ｃｕ 및 Ｃｕ/Ｎｉ 층에 사용하는 안정화된 에칭액 - Google Patents

Ｃｕ 및 Ｃｕ/Ｎｉ 층에 사용하는 안정화된 에칭액 Download PDF

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Publication number
KR101339492B1
KR101339492B1 KR1020087003474A KR20087003474A KR101339492B1 KR 101339492 B1 KR101339492 B1 KR 101339492B1 KR 1020087003474 A KR1020087003474 A KR 1020087003474A KR 20087003474 A KR20087003474 A KR 20087003474A KR 101339492 B1 KR101339492 B1 KR 101339492B1
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KR
South Korea
Prior art keywords
etching
layers
etchant
layer
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020087003474A
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English (en)
Korean (ko)
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KR20080042820A (ko
Inventor
마틴 플뤼게
라이문트 멜리스
토마스 괼첸로이크터
마리안느 슈바거
뤼디거 외스텐
Original Assignee
바스프 에스이
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Publication of KR20080042820A publication Critical patent/KR20080042820A/ko
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Expired - Fee Related legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/28—Acidic compositions for etching iron group metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
    • C01B15/01—Hydrogen peroxide
    • C01B15/037—Stabilisation by additives
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020087003474A 2005-08-12 2006-08-07 Ｃｕ 및 Ｃｕ/Ｎｉ 층에 사용하는 안정화된 에칭액 Expired - Fee Related KR101339492B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102005038414.5 2005-08-12
DE102005038414A DE102005038414A1 (de) 2005-08-12 2005-08-12 Stabilisierte Ätzlösungen zum Ätzen von Cu- und Cu/Ni-Schicht
PCT/EP2006/065104 WO2007020206A1 (de) 2005-08-12 2006-08-07 Stabilisierte ätzlösungen für cu- und cu/ni-schichten

Publications (2)

Publication Number Publication Date
KR20080042820A KR20080042820A (ko) 2008-05-15
KR101339492B1 true KR101339492B1 (ko) 2013-12-11

Family

ID=37113846

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087003474A Expired - Fee Related KR101339492B1 (ko) 2005-08-12 2006-08-07 Ｃｕ 및 Ｃｕ/Ｎｉ 층에 사용하는 안정화된 에칭액

Country Status (9)

Country Link
US (1) US8652972B2 (enExample)
EP (1) EP1917381B1 (enExample)
JP (1) JP5101505B2 (enExample)
KR (1) KR101339492B1 (enExample)
CN (1) CN101238242B (enExample)
DE (1) DE102005038414A1 (enExample)
IL (1) IL188939A (enExample)
TW (1) TWI424091B (enExample)
WO (1) WO2007020206A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102687251B (zh) 2009-12-15 2016-02-17 三菱瓦斯化学株式会社 蚀刻液及使用其的半导体装置的制造方法
CN102696097B (zh) * 2009-12-25 2015-08-05 三菱瓦斯化学株式会社 蚀刻液及使用其的半导体装置的制造方法
KR101825493B1 (ko) 2010-04-20 2018-02-06 삼성디스플레이 주식회사 금속 배선용 식각액 조성물 및 이를 이용한 박막 트랜지스터 표시판의 제조방법
CN102230178B (zh) * 2011-04-29 2012-09-05 西安东旺精细化学有限公司 镍或镍/铜合金的蚀刻液组合物
KR101812085B1 (ko) * 2013-05-02 2017-12-27 후지필름 가부시키가이샤 에칭액 및 에칭액의 키트, 이를 이용한 에칭 방법 및 반도체 기판 제품의 제조 방법
CN110147008B (zh) * 2013-07-03 2022-03-22 东友精细化工有限公司 制造液晶显示器用阵列基板的方法
CN104513982B (zh) * 2013-09-27 2019-01-22 东友精细化工有限公司 用于液晶显示器的阵列基板的制造方法
JP6657770B2 (ja) * 2014-11-27 2020-03-04 三菱瓦斯化学株式会社 液体組成物およびこれを用いたエッチング方法
KR20160120891A (ko) 2015-04-09 2016-10-19 삼성전자주식회사 반도체 장치
KR102479444B1 (ko) * 2015-12-30 2022-12-21 삼영순화(주) 식각액 조성물 및 이를 이용한 반도체 장치의 제조 방법
KR101988817B1 (ko) * 2016-04-27 2019-06-12 산요가세이고교 가부시키가이샤 에칭액 및 전자 기판의 제조 방법
US10316414B2 (en) * 2016-06-08 2019-06-11 United Technologies Corporation Removing material with nitric acid and hydrogen peroxide solution
CN106757029A (zh) * 2017-02-08 2017-05-31 昆山艾森半导体材料有限公司 一种侧蚀小的铜蚀刻液
CN108930037B (zh) * 2017-05-22 2021-02-26 东友精细化工有限公司 金属膜蚀刻液组合物及利用其的导电图案形成方法
WO2019045129A1 (ko) * 2017-08-29 2019-03-07 (주)예스바이오골드 치과용 지르코니아 세라믹의 표면 에칭제 조성물 및 이를 이용한 치아수복물의 제조방법
WO2019135965A1 (en) * 2018-01-08 2019-07-11 Arch Chemicals, Inc. Water treatment composition
CN111519190B (zh) * 2020-05-27 2022-03-18 湖北兴福电子材料有限公司 一种铜制程面板中稳定蚀刻锥角的蚀刻液及稳定方法
WO2022071069A1 (ja) 2020-09-29 2022-04-07 三菱瓦斯化学株式会社 半導体基板洗浄用組成物及び洗浄方法
CN112680229A (zh) * 2021-01-29 2021-04-20 深圳市百通达科技有限公司 一种湿电子化学的硅基材料蚀刻液及其制备方法
CN116005158A (zh) * 2022-12-29 2023-04-25 江阴润玛电子材料股份有限公司 一种集成电路用铜镍腐蚀液及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3341384A (en) * 1964-05-04 1967-09-12 Allied Chem Dissolution of metal with acidified hydrogen peroxide containing dibasic acid
US20010052510A1 (en) * 1999-03-17 2001-12-20 John Schemenaur Micro-etch solution for producing metal surface topography

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JPS5419381B2 (enExample) 1972-04-13 1979-07-14
US4059678A (en) 1973-02-02 1977-11-22 Fmc Corporation Stabilization of iron-containing acidic hydrogen peroxide solutions
JPS50140333A (enExample) 1974-04-27 1975-11-11
SU929738A1 (ru) 1980-10-27 1982-05-23 Предприятие П/Я М-5191 Раствор дл размерного травлени молибдена и меди
JPS6058795B2 (ja) 1980-11-25 1985-12-21 シャープ株式会社 Ｎｉ薄膜エツチング方法
SU950799A1 (ru) 1980-12-22 1982-08-15 Предприятие П/Я Г-4377 Раствор дл травлени металлов
GB8925376D0 (en) 1989-11-09 1989-12-28 Interox Chemicals Ltd Stabilisation of concentrated hydrogen peroxide solutions
JP2884935B2 (ja) * 1992-08-17 1999-04-19 日立化成工業株式会社 ニッケル又はニッケル合金のエッチング液及びこのエッチング液を用いる方法並びにこのエッチング液を用いて配線板を製造する方法
JPH06322559A (ja) * 1993-05-07 1994-11-22 Okuno Chem Ind Co Ltd ニッケル又はニッケル合金皮膜用剥離剤
JPH0718472A (ja) * 1993-07-06 1995-01-20 Ebara Yuujiraito Kk 銅・銅合金材のための浸漬エッチング液
JP3711565B2 (ja) * 1994-02-24 2005-11-02 日立化成工業株式会社 エッチング液中の塩素イオンの除去方法並びにこのエッチング液を用いて配線板を製造する方法
JPH08311663A (ja) * 1995-05-18 1996-11-26 Merutetsukusu Kk ニッケル被膜またはニッケル合金被膜の剥離液
US5897375A (en) * 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
JP2004043895A (ja) * 2002-07-12 2004-02-12 Mitsubishi Chemicals Corp 銅エッチング液

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3341384A (en) * 1964-05-04 1967-09-12 Allied Chem Dissolution of metal with acidified hydrogen peroxide containing dibasic acid
US20010052510A1 (en) * 1999-03-17 2001-12-20 John Schemenaur Micro-etch solution for producing metal surface topography

Also Published As

Publication number Publication date
IL188939A0 (en) 2008-04-13
JP5101505B2 (ja) 2012-12-19
CN101238242A (zh) 2008-08-06
IL188939A (en) 2013-12-31
US20100304573A1 (en) 2010-12-02
EP1917381B1 (de) 2013-04-10
WO2007020206A1 (de) 2007-02-22
TWI424091B (zh) 2014-01-21
EP1917381A1 (de) 2008-05-07
TW200718806A (en) 2007-05-16
CN101238242B (zh) 2011-05-04
JP2009505388A (ja) 2009-02-05
KR20080042820A (ko) 2008-05-15
DE102005038414A1 (de) 2007-02-15
US8652972B2 (en) 2014-02-18

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