TWI419234B - 管理基材退火的熱預算 - Google Patents

管理基材退火的熱預算 Download PDF

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Publication number
TWI419234B
TWI419234B TW098130387A TW98130387A TWI419234B TW I419234 B TWI419234 B TW I419234B TW 098130387 A TW098130387 A TW 098130387A TW 98130387 A TW98130387 A TW 98130387A TW I419234 B TWI419234 B TW I419234B
Authority
TW
Taiwan
Prior art keywords
energy
annealing
substrate
heating
zone
Prior art date
Application number
TW098130387A
Other languages
English (en)
Chinese (zh)
Other versions
TW201013789A (en
Inventor
莫非特史帝夫
梅爾艾伯希拉許Ｊ
拉瑪姆爾非桑達
拉尼許喬瑟夫
漢特亞倫
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/212,214 external-priority patent/US8314369B2/en
Priority claimed from US12/212,157 external-priority patent/US20100068898A1/en
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201013789A publication Critical patent/TW201013789A/zh
Application granted granted Critical
Publication of TWI419234B publication Critical patent/TWI419234B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring

Landscapes

  • Recrystallisation Techniques (AREA)
  • Furnace Details (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
TW098130387A 2008-09-17 2009-09-09 管理基材退火的熱預算 TWI419234B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/212,214 US8314369B2 (en) 2008-09-17 2008-09-17 Managing thermal budget in annealing of substrates
US12/212,157 US20100068898A1 (en) 2008-09-17 2008-09-17 Managing thermal budget in annealing of substrates

Publications (2)

Publication Number Publication Date
TW201013789A TW201013789A (en) 2010-04-01
TWI419234B true TWI419234B (zh) 2013-12-11

Family

ID=42039812

Family Applications (3)

Application Number Title Priority Date Filing Date
TW098130387A TWI419234B (zh) 2008-09-17 2009-09-09 管理基材退火的熱預算
TW102122198A TWI549190B (zh) 2008-09-17 2009-09-09 管理基材退火的熱預算
TW102141287A TWI549191B (zh) 2008-09-17 2009-09-09 管理基材退火的熱預算

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW102122198A TWI549190B (zh) 2008-09-17 2009-09-09 管理基材退火的熱預算
TW102141287A TWI549191B (zh) 2008-09-17 2009-09-09 管理基材退火的熱預算

Country Status (7)

Country Link
EP (1) EP2342739A4 (enExample)
JP (1) JP5611212B2 (enExample)
KR (2) KR101868378B1 (enExample)
CN (1) CN102160157B (enExample)
SG (2) SG193882A1 (enExample)
TW (3) TWI419234B (enExample)
WO (1) WO2010033389A1 (enExample)

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US8546805B2 (en) * 2012-01-27 2013-10-01 Ultratech, Inc. Two-beam laser annealing with improved temperature performance
US9376731B2 (en) * 2012-05-08 2016-06-28 Applied Materials, Inc. Magneto-thermal processing apparatus and methods
US9239192B2 (en) 2013-02-20 2016-01-19 Taiwan Semiconductor Manufacturing Co., Ltd. Substrate rapid thermal heating system and methods
CN104752174A (zh) * 2013-12-30 2015-07-01 上海微电子装备有限公司 一种激光退火装置及方法
TW201610215A (zh) * 2014-03-27 2016-03-16 應用材料股份有限公司 用於低熱預算處理的循環尖峰退火化學曝露
EP3213364A4 (en) * 2014-10-31 2018-05-02 Applied Materials, Inc. Integration of laser processing with deposition of electrochemical device layers
CN107431033B (zh) * 2015-03-20 2021-10-22 应用材料公司 用于3d共形处理的原子层处理腔室
JP6985249B2 (ja) * 2015-07-29 2021-12-22 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated 回転基板レーザアニール
JP6887234B2 (ja) 2016-09-21 2021-06-16 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
KR102099890B1 (ko) * 2017-05-18 2020-04-14 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102180311B1 (ko) 2018-07-27 2020-11-18 주식회사 코윈디에스티 레이저 어닐링 장치
KR102061424B1 (ko) * 2018-07-27 2019-12-31 주식회사 코윈디에스티 로이 유리 어닐링 장치
CN112038223A (zh) * 2020-08-27 2020-12-04 上海华力集成电路制造有限公司 一种改善双激光退火过程中晶圆表面热分布的方法
CN116092981A (zh) * 2023-02-01 2023-05-09 浙江芯科半导体有限公司 用于提升晶圆退火质量的激光退火设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW457553B (en) * 1999-01-08 2001-10-01 Sony Corp Process for producing thin film semiconductor device and laser irradiation apparatus
US6638800B1 (en) * 1992-11-06 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US7214574B2 (en) * 1997-03-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Heating treatment device, heating treatment method and fabrication method of semiconductor device

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JPS5696835A (en) * 1979-12-29 1981-08-05 Fujitsu Ltd Manufacture of semiconductor device
JPS58106836A (ja) * 1981-12-18 1983-06-25 Hitachi Ltd レ−ザ−アニ−ル装置
JPS58176929A (ja) * 1982-04-09 1983-10-17 Fujitsu Ltd 半導体装置の製造方法
JPH03266424A (ja) * 1990-03-16 1991-11-27 Sony Corp 半導体基板のアニール方法
US6187616B1 (en) * 1998-02-13 2001-02-13 Seiko Epson Corporation Method for fabricating semiconductor device and heat treatment apparatus
US6771895B2 (en) * 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
WO2001064591A1 (en) * 2000-03-01 2001-09-07 Heraeus Amersil, Inc. Method, apparatus, and article of manufacture for determining an amount of energy needed to bring a quartz workpiece to a fusion weldable condition
JP2003045820A (ja) * 2001-07-30 2003-02-14 Semiconductor Energy Lab Co Ltd レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法
US6987240B2 (en) * 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
US7098155B2 (en) * 2003-09-29 2006-08-29 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
TWI297521B (en) * 2004-01-22 2008-06-01 Ultratech Inc Laser thermal annealing of lightly doped silicon substrates
US7482254B2 (en) * 2005-09-26 2009-01-27 Ultratech, Inc. Apparatus and methods for thermally processing undoped and lightly doped substrates without pre-heating
US20080045040A1 (en) * 2006-08-17 2008-02-21 Toshiba America Electronic Components, Inc. Laser Spike Anneal With Plural Light Sources
JP2008080371A (ja) * 2006-09-27 2008-04-10 Sumitomo Heavy Ind Ltd レーザ加工方法、及び、レーザ加工装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6638800B1 (en) * 1992-11-06 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US7214574B2 (en) * 1997-03-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Heating treatment device, heating treatment method and fabrication method of semiconductor device
TW457553B (en) * 1999-01-08 2001-10-01 Sony Corp Process for producing thin film semiconductor device and laser irradiation apparatus

Also Published As

Publication number Publication date
KR101800404B1 (ko) 2017-11-22
TW201415558A (zh) 2014-04-16
KR20110053387A (ko) 2011-05-20
KR101868378B1 (ko) 2018-06-18
TWI549191B (zh) 2016-09-11
EP2342739A4 (en) 2013-05-22
SG193882A1 (en) 2013-10-30
CN102160157B (zh) 2015-11-25
JP5611212B2 (ja) 2014-10-22
WO2010033389A1 (en) 2010-03-25
JP2012503311A (ja) 2012-02-02
TW201342480A (zh) 2013-10-16
SG10201807844VA (en) 2018-10-30
TWI549190B (zh) 2016-09-11
EP2342739A1 (en) 2011-07-13
CN102160157A (zh) 2011-08-17
TW201013789A (en) 2010-04-01
KR20170130616A (ko) 2017-11-28

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