EP2342739A4 - MANAGEMENT OF THE HEAT BUDGET ON LIGHTING OF SUBSTRATES - Google Patents

MANAGEMENT OF THE HEAT BUDGET ON LIGHTING OF SUBSTRATES

Info

Publication number
EP2342739A4
EP2342739A4 EP09814993.3A EP09814993A EP2342739A4 EP 2342739 A4 EP2342739 A4 EP 2342739A4 EP 09814993 A EP09814993 A EP 09814993A EP 2342739 A4 EP2342739 A4 EP 2342739A4
Authority
EP
European Patent Office
Prior art keywords
thermal budget
budget management
substrate recovery
recovery
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09814993.3A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP2342739A1 (en
Inventor
Stephen Moffatt
Abhilash J Mayur
Sundar Ramamurthy
Joseph Ranish
Aaron Hunter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/212,214 external-priority patent/US8314369B2/en
Priority claimed from US12/212,157 external-priority patent/US20100068898A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of EP2342739A1 publication Critical patent/EP2342739A1/en
Publication of EP2342739A4 publication Critical patent/EP2342739A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
EP09814993.3A 2008-09-17 2009-09-03 MANAGEMENT OF THE HEAT BUDGET ON LIGHTING OF SUBSTRATES Withdrawn EP2342739A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/212,214 US8314369B2 (en) 2008-09-17 2008-09-17 Managing thermal budget in annealing of substrates
US12/212,157 US20100068898A1 (en) 2008-09-17 2008-09-17 Managing thermal budget in annealing of substrates
PCT/US2009/055838 WO2010033389A1 (en) 2008-09-17 2009-09-03 Managing thermal budget in annealing of substrates

Publications (2)

Publication Number Publication Date
EP2342739A1 EP2342739A1 (en) 2011-07-13
EP2342739A4 true EP2342739A4 (en) 2013-05-22

Family

ID=42039812

Family Applications (1)

Application Number Title Priority Date Filing Date
EP09814993.3A Withdrawn EP2342739A4 (en) 2008-09-17 2009-09-03 MANAGEMENT OF THE HEAT BUDGET ON LIGHTING OF SUBSTRATES

Country Status (7)

Country Link
EP (1) EP2342739A4 (enExample)
JP (1) JP5611212B2 (enExample)
KR (2) KR101868378B1 (enExample)
CN (1) CN102160157B (enExample)
SG (2) SG10201807844VA (enExample)
TW (3) TWI549190B (enExample)
WO (1) WO2010033389A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8546805B2 (en) * 2012-01-27 2013-10-01 Ultratech, Inc. Two-beam laser annealing with improved temperature performance
US9376731B2 (en) * 2012-05-08 2016-06-28 Applied Materials, Inc. Magneto-thermal processing apparatus and methods
US9239192B2 (en) * 2013-02-20 2016-01-19 Taiwan Semiconductor Manufacturing Co., Ltd. Substrate rapid thermal heating system and methods
CN104752174A (zh) * 2013-12-30 2015-07-01 上海微电子装备有限公司 一种激光退火装置及方法
TW201610215A (zh) * 2014-03-27 2016-03-16 應用材料股份有限公司 用於低熱預算處理的循環尖峰退火化學曝露
KR20170078795A (ko) * 2014-10-31 2017-07-07 어플라이드 머티어리얼스, 인코포레이티드 전기화학 디바이스 층들의 증착과 레이저 프로세싱의 통합
WO2016153716A1 (en) * 2015-03-20 2016-09-29 Applied Materials, Inc. An atomic layer process chamber for 3d conformal processing
KR102531865B1 (ko) * 2015-07-29 2023-05-16 어플라이드 머티어리얼스, 인코포레이티드 회전하는 기판의 레이저 어닐링
JP6887234B2 (ja) 2016-09-21 2021-06-16 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
KR102099890B1 (ko) * 2017-05-18 2020-04-14 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102180311B1 (ko) 2018-07-27 2020-11-18 주식회사 코윈디에스티 레이저 어닐링 장치
KR102061424B1 (ko) * 2018-07-27 2019-12-31 주식회사 코윈디에스티 로이 유리 어닐링 장치
CN112038223A (zh) * 2020-08-27 2020-12-04 上海华力集成电路制造有限公司 一种改善双激光退火过程中晶圆表面热分布的方法
CN116092981A (zh) * 2023-02-01 2023-05-09 浙江芯科半导体有限公司 用于提升晶圆退火质量的激光退火设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58106836A (ja) * 1981-12-18 1983-06-25 Hitachi Ltd レ−ザ−アニ−ル装置
EP0091806A2 (en) * 1982-04-09 1983-10-19 Fujitsu Limited A method for producing a single crystalline semiconductor layer
US6187616B1 (en) * 1998-02-13 2001-02-13 Seiko Epson Corporation Method for fabricating semiconductor device and heat treatment apparatus
US20080045040A1 (en) * 2006-08-17 2008-02-21 Toshiba America Electronic Components, Inc. Laser Spike Anneal With Plural Light Sources

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5696835A (en) * 1979-12-29 1981-08-05 Fujitsu Ltd Manufacture of semiconductor device
JPH03266424A (ja) * 1990-03-16 1991-11-27 Sony Corp 半導体基板のアニール方法
US5643801A (en) * 1992-11-06 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser processing method and alignment
US6423585B1 (en) * 1997-03-11 2002-07-23 Semiconductor Energy Laboratory Co., Ltd. Heating treatment device, heating treatment method and fabrication method of semiconductor device
US6771895B2 (en) * 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
TW457553B (en) * 1999-01-08 2001-10-01 Sony Corp Process for producing thin film semiconductor device and laser irradiation apparatus
AU2001247240A1 (en) * 2000-03-01 2001-09-12 Heraeus Amersil, Inc. Method, apparatus, and article of manufacture for determining an amount of energy needed to bring a quartz workpiece to a fusion weldable condition
JP2003045820A (ja) * 2001-07-30 2003-02-14 Semiconductor Energy Lab Co Ltd レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法
US6987240B2 (en) * 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
US7098155B2 (en) * 2003-09-29 2006-08-29 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
TWI297521B (en) 2004-01-22 2008-06-01 Ultratech Inc Laser thermal annealing of lightly doped silicon substrates
US7482254B2 (en) * 2005-09-26 2009-01-27 Ultratech, Inc. Apparatus and methods for thermally processing undoped and lightly doped substrates without pre-heating
JP2008080371A (ja) * 2006-09-27 2008-04-10 Sumitomo Heavy Ind Ltd レーザ加工方法、及び、レーザ加工装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58106836A (ja) * 1981-12-18 1983-06-25 Hitachi Ltd レ−ザ−アニ−ル装置
EP0091806A2 (en) * 1982-04-09 1983-10-19 Fujitsu Limited A method for producing a single crystalline semiconductor layer
US6187616B1 (en) * 1998-02-13 2001-02-13 Seiko Epson Corporation Method for fabricating semiconductor device and heat treatment apparatus
US20080045040A1 (en) * 2006-08-17 2008-02-21 Toshiba America Electronic Components, Inc. Laser Spike Anneal With Plural Light Sources

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2010033389A1 *

Also Published As

Publication number Publication date
JP5611212B2 (ja) 2014-10-22
TWI419234B (zh) 2013-12-11
WO2010033389A1 (en) 2010-03-25
KR101800404B1 (ko) 2017-11-22
KR20110053387A (ko) 2011-05-20
SG193882A1 (en) 2013-10-30
KR20170130616A (ko) 2017-11-28
CN102160157B (zh) 2015-11-25
TW201415558A (zh) 2014-04-16
TW201342480A (zh) 2013-10-16
TWI549191B (zh) 2016-09-11
TW201013789A (en) 2010-04-01
TWI549190B (zh) 2016-09-11
KR101868378B1 (ko) 2018-06-18
CN102160157A (zh) 2011-08-17
SG10201807844VA (en) 2018-10-30
EP2342739A1 (en) 2011-07-13
JP2012503311A (ja) 2012-02-02

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Inventor name: MOFFATT, STEPHEN

Inventor name: MAYUR, ABHILASH, J.

Inventor name: HUNTER, AARON

Inventor name: RAMAMURTHY, SUNDAR

Inventor name: RANISH, JOSEPH

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