BRPI0821262A2 - Célula fotovoltaica e dispositivo fotovoltaico - Google Patents

Célula fotovoltaica e dispositivo fotovoltaico

Info

Publication number
BRPI0821262A2
BRPI0821262A2 BRPI0821262-7A BRPI0821262A BRPI0821262A2 BR PI0821262 A2 BRPI0821262 A2 BR PI0821262A2 BR PI0821262 A BRPI0821262 A BR PI0821262A BR PI0821262 A2 BRPI0821262 A2 BR PI0821262A2
Authority
BR
Brazil
Prior art keywords
photovoltaic
cell
photovoltaic cell
photovoltaic device
Prior art date
Application number
BRPI0821262-7A
Other languages
English (en)
Inventor
Efrat Lifshitz
Volker Hilarius
Original Assignee
Technion Res & Dev Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Technion Res & Dev Foundation filed Critical Technion Res & Dev Foundation
Publication of BRPI0821262A2 publication Critical patent/BRPI0821262A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2054—Light-sensitive devices comprising a semiconductor electrode comprising AII-BVI compounds, e.g. CdTe, CdSe, ZnTe, ZnSe, with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
BRPI0821262-7A 2007-12-13 2008-12-14 Célula fotovoltaica e dispositivo fotovoltaico BRPI0821262A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1353807P 2007-12-13 2007-12-13
PCT/IL2008/001614 WO2009074993A2 (en) 2007-12-13 2008-12-14 Photovoltaic cells comprising group iv-vi semiconductor core-shell nanocrystals

Publications (1)

Publication Number Publication Date
BRPI0821262A2 true BRPI0821262A2 (pt) 2015-06-16

Family

ID=40755957

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0821262-7A BRPI0821262A2 (pt) 2007-12-13 2008-12-14 Célula fotovoltaica e dispositivo fotovoltaico

Country Status (9)

Country Link
US (1) US20100326506A1 (pt)
EP (1) EP2232574A2 (pt)
JP (1) JP2011518421A (pt)
KR (1) KR101460395B1 (pt)
CN (1) CN102308393A (pt)
AU (1) AU2008334276B2 (pt)
BR (1) BRPI0821262A2 (pt)
SG (1) SG186643A1 (pt)
WO (1) WO2009074993A2 (pt)

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WO2011092646A2 (en) * 2010-01-28 2011-08-04 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. Lighting devices with prescribed colour emission
US9382474B2 (en) 2010-04-06 2016-07-05 The Governing Council Of The University Of Toronto Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles
BR112012029738A2 (pt) 2010-05-24 2016-08-09 Nanoholdings Llc método e aparelho para fornecer uma camada de bloqueio de carga em um dispositivo de conversão ascendente de infravermelho
KR101262501B1 (ko) * 2011-04-04 2013-05-08 엘지이노텍 주식회사 태양전지 및 이의 제조방법
AU2012240349A1 (en) 2011-04-05 2013-11-07 Nanoholdings, Llc Method and apparatus for providing a window with an at least partially transparent one side emitting OLED lighting and an IR sensitive photovoltaic panel
CN103493199B (zh) * 2011-04-05 2016-11-23 佛罗里达大学研究基金会有限公司 用于将红外（ir）光伏电池集成在薄膜光伏电池上的方法和装置
CA2834149A1 (en) * 2011-04-25 2012-11-01 The Research Foundation Of State University Of New York Spectral modification
MX2013015214A (es) 2011-06-30 2014-03-21 Nanoholdings Llc Metodo y aparato para detectar radiacion infrarroja con ganancia.
US20130112941A1 (en) 2011-11-09 2013-05-09 Juanita Kurtin Semiconductor structure having nanocrystalline core and nanocrystalline shell with insulator coating
US20130112942A1 (en) 2011-11-09 2013-05-09 Juanita Kurtin Composite having semiconductor structures embedded in a matrix
US20130146141A1 (en) * 2011-12-12 2013-06-13 Matthew A. PELTON Small core/large shell semiconductor nanocrystals for high performance luminescent solar concentrators and wavelength downshifting
US20140014169A1 (en) * 2012-07-13 2014-01-16 Triton Systems, Inc. Nanostring mats, multi-junction devices, and methods for making same
US8829331B2 (en) * 2012-08-10 2014-09-09 Dimerond Technologies Llc Apparatus pertaining to the co-generation conversion of light into electricity
US9425365B2 (en) 2012-08-20 2016-08-23 Pacific Light Technologies Corp. Lighting device having highly luminescent quantum dots
CN102881829A (zh) * 2012-10-15 2013-01-16 吉林大学 反式结构的水相无机有机杂化太阳能电池及其制备方法
US8889457B2 (en) 2012-12-13 2014-11-18 Pacific Light Technologies Corp. Composition having dispersion of nano-particles therein and methods of fabricating same
KR101479157B1 (ko) * 2013-03-15 2015-02-25 김일구 나노구조의 양자점 유기 벌크 이종접합 수광소자
JP6175293B2 (ja) * 2013-06-18 2017-08-02 京セラ株式会社 量子ドット粒子およびそれを用いた半導体装置
WO2015084810A2 (en) 2013-12-05 2015-06-11 The Board Of Regents Of The University Of Oklahoma Thermophotovoltaic materials, methods of deposition, and devices
JP2015156367A (ja) * 2013-12-27 2015-08-27 ザ・ボード・オブ・トラスティーズ・オブ・ザ・ユニバーシティ・オブ・イリノイ ナノ構造材料積層体転移方法及びデバイス
JP2015191908A (ja) * 2014-03-27 2015-11-02 京セラ株式会社 量子ドット，光電変換層，光電変換装置
WO2015186033A1 (en) * 2014-06-03 2015-12-10 Fondazione Istituto Italiano Di Tecnologia Continuous-wave pumped colloidal nanocrystal laser
CN106663704B (zh) * 2014-07-30 2018-07-27 京瓷株式会社 量子点太阳能电池
US10749058B2 (en) 2015-06-11 2020-08-18 University Of Florida Research Foundation, Incorporated Monodisperse, IR-absorbing nanoparticles and related methods and devices
CN105542749A (zh) * 2015-12-28 2016-05-04 Tcl集团股份有限公司 一种在低温下混合壳源前驱物的长壳方法及量子点
TWI734754B (zh) * 2016-03-24 2021-08-01 美商陶氏全球科技責任有限公司 光電子裝置及使用方法
KR101958088B1 (ko) * 2017-05-23 2019-03-14 한국세라믹기술원 코어/쉘 다층구조 반도체 나노입자의 제조방법
CN107248534B (zh) * 2017-05-27 2018-10-16 华中科技大学 一种成分连续渐变的半导体合金薄膜及其制备方法和应用
KR102547801B1 (ko) * 2017-08-28 2023-06-26 삼성전자주식회사 적외선 검출기 및 이를 포함하는 적외선 센서
CN110323318A (zh) * 2019-06-19 2019-10-11 岭南师范学院 一种PbSe量子点近红外发光二极管的制备方法
CN110299423B (zh) * 2019-06-20 2020-11-13 浙江大学 一种p型二维合金化合物半导体光电场效应晶体管及其制备方法
KR102386803B1 (ko) * 2020-04-01 2022-04-14 이화여자대학교 산학협력단 색상형 dbr 필름 및 이의 제조 방법
CN112531065B (zh) * 2020-12-22 2021-06-29 中国科学院重庆绿色智能技术研究院 用于红外光电的铅盐薄膜结构及其制备方法

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Also Published As

Publication number Publication date
CN102308393A (zh) 2012-01-04
EP2232574A2 (en) 2010-09-29
WO2009074993A3 (en) 2011-04-21
JP2011518421A (ja) 2011-06-23
KR101460395B1 (ko) 2014-11-21
KR20100102111A (ko) 2010-09-20
WO2009074993A2 (en) 2009-06-18
SG186643A1 (en) 2013-01-30
US20100326506A1 (en) 2010-12-30
AU2008334276A1 (en) 2009-06-18
AU2008334276B2 (en) 2014-03-20

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 8A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]