JP2015156367A - ナノ構造材料積層体転移方法及びデバイス - Google Patents
ナノ構造材料積層体転移方法及びデバイス Download PDFInfo
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- 239000002086 nanomaterial Substances 0.000 title claims abstract description 110
- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000012546 transfer Methods 0.000 title description 20
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 239000002096 quantum dot Substances 0.000 claims abstract description 72
- 239000002131 composite material Substances 0.000 claims abstract description 69
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims description 230
- 239000002105 nanoparticle Substances 0.000 claims description 27
- 229910052731 fluorine Inorganic materials 0.000 claims description 22
- 239000011737 fluorine Substances 0.000 claims description 22
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 21
- 229920002313 fluoropolymer Polymers 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 16
- 239000007924 injection Substances 0.000 claims description 16
- 239000002346 layers by function Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 47
- 239000000243 solution Substances 0.000 description 44
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 31
- 239000002073 nanorod Substances 0.000 description 26
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 description 23
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 20
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 18
- 239000010408 film Substances 0.000 description 18
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 16
- 239000004205 dimethyl polysiloxane Substances 0.000 description 16
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 16
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 16
- 230000007704 transition Effects 0.000 description 16
- -1 AgInZnS Chemical compound 0.000 description 15
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 15
- 239000011787 zinc oxide Substances 0.000 description 15
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 14
- 230000005525 hole transport Effects 0.000 description 13
- 239000000203 mixture Substances 0.000 description 13
- 239000004811 fluoropolymer Substances 0.000 description 12
- 239000002094 self assembled monolayer Substances 0.000 description 12
- 239000013545 self-assembled monolayer Substances 0.000 description 12
- 239000002243 precursor Substances 0.000 description 10
- 238000011084 recovery Methods 0.000 description 10
- 239000011521 glass Substances 0.000 description 9
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 9
- 239000002245 particle Substances 0.000 description 8
- 238000007639 printing Methods 0.000 description 8
- 238000004528 spin coating Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 238000010023 transfer printing Methods 0.000 description 8
- 239000011701 zinc Substances 0.000 description 8
- 229910010413 TiO 2 Inorganic materials 0.000 description 7
- 229920000144 PEDOT:PSS Polymers 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical compound C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000012299 nitrogen atmosphere Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 229910004613 CdTe Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 4
- 229940049964 oleate Drugs 0.000 description 4
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- VOQMPZXAFLPTMM-UHFFFAOYSA-N 4-(4-chlorophenoxy)piperidine Chemical compound C1=CC(Cl)=CC=C1OC1CCNCC1 VOQMPZXAFLPTMM-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 3
- 241000252506 Characiformes Species 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- 229910007709 ZnTe Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002071 nanotube Substances 0.000 description 3
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadecene Natural products CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 3
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- ZMBHCYHQLYEYDV-UHFFFAOYSA-N trioctylphosphine oxide Chemical compound CCCCCCCCP(=O)(CCCCCCCC)CCCCCCCC ZMBHCYHQLYEYDV-UHFFFAOYSA-N 0.000 description 3
- 239000008096 xylene Substances 0.000 description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910004262 HgTe Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- IVSZLXZYQVIEFR-UHFFFAOYSA-N m-xylene Chemical group CC1=CC=CC(C)=C1 IVSZLXZYQVIEFR-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002074 nanoribbon Substances 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 229910020599 Co 3 O 4 Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229920001774 Perfluoroether Polymers 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 241000270295 Serpentes Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052956 cinnabar Inorganic materials 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910052949 galena Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 229920002432 poly(vinyl methyl ether) polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000527 sonication Methods 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- PISDRBMXQBSCIP-UHFFFAOYSA-N trichloro(3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctyl)silane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CC[Si](Cl)(Cl)Cl PISDRBMXQBSCIP-UHFFFAOYSA-N 0.000 description 1
- RCHUVCPBWWSUMC-UHFFFAOYSA-N trichloro(octyl)silane Chemical compound CCCCCCCC[Si](Cl)(Cl)Cl RCHUVCPBWWSUMC-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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Abstract
Description
(a)1)ナノ構造材料層及び2)前記ナノ構造材料層とは異なる1以上の追加の機能層を含む多層複合体を第1の基体上に提供し、
(b)前記多層複合体を第2の基体上に移すことを含む。
(a)オーバーコートフッ素含有層と共にナノ構造材料を含む層状複合体を第1の基体上に提供し、
(b)その層状複合体をスタンプと接触させ、
(c)その層状複合体を第2の基体に移すことを含む。
(a)1)ナノ構造材料層、2)前記ナノ構造材料層とは異なる1以上の追加の機能層、及び3)オーバーコートフッ素含有層を含む多層複合体を第1の基体上に提供し、
(b)前記多層複合体を第2の基体に移すことを含む。
12 自己組織化単分子膜(SAM)層
14 犠牲層
16 ナノ構造材料層
16’ナノ構造材料層積層体
18 電子輸送層
20 電極
22 フッ素含有層
24 転移スタンプ
30 第2の基体(レシーバー基体)
32、34、36 機能層
50 レシーバー基体
60 アノード層
62 正孔注入層
64 正孔輸送層
66 ナノ構造材料層
66’多層ナノ構造材料複合体
68 電子輸送層
70 カソード
80 アノード層
82 正孔注入層
84 正孔輸送層
86 ナノ構造材料層
86’多層ナノ構造材料複合体
88 電子輸送層
90 カソード
Claims (16)
- (a)1)ナノ構造材料層及び2)前記ナノ構造材料層とは異なる1以上の追加の層を含む多層複合体を、第1の基体上に提供し、
(b)前記多層複合体を第2の基体に移す
ことを含むナノ構造材料複合体を製造する方法。 - 前記多層複合体がスタンプと接触させられ、及び
前記多層複合体が前記スタンプから前記第2の基体の上に付着させられる
請求項1に記載の方法。 - 前記1以上の追加の機能層が電荷輸送層、電荷注入層、及び/又は電極層の1以上を含む請求項1又は2に記載の方法。
- 前記多層複合体がオーバーコートフッ素含有層をさらに含む請求項1〜3のいずれか1項に記載の方法。
- (a)オーバーコートフッ素含有層と共にナノ構造材料層を含む層状複合体を第1の基体上に提供し、
(b)前記層状複合体をスタンプと接触させ、
(c)前記層状複合体を前記スタンプから第2の基体上に付着させる
ことを含むナノ構造材料複合体を製造する方法。 - 前記スタンプが前記フッ素含有層に接触する請求項4又は5に記載の方法。
- 前記フッ素含有層がフッ素化ポリマーを含む請求項4〜6のいずれか1項に記載の方法。
- 前記複合体を付着させた後、前記フッ素含有層を取り除くことをさらに含む請求項4〜7のいずれか1項に記載の方法。
- 複数の層状複合体が第2の基体上に付着させられる請求項1〜8のいずれか1項に記載の方法。
- 少なくとも1つの層状複合体が赤色発光ナノ構造材料層を含み、及び/又は少なくとも1つの層状複合体が緑色発光ナノ構造材料層を含み、及び/又は少なくとも1つの層状複合体が青色発光ナノ構造材料層を含む請求項9に記載の方法。
- 第2の基体がアノード層を含む請求項1〜10のいずれか1項に記載の方法。
- 前記層状複合体の付着物が発光デバイス、光検出デバイス、化学センサ、光起電力デバイス、ダイオード、トランジスタ又は生物学的に活性な表面を提供する請求項9〜11のいずれか1項に記載の方法。
- 前記ナノ構造材料複合体が200μm×200μm以下の寸法を有する請求項1〜12のいずれか1項に記載の方法。
- 前記ナノ構造材料がナノ粒子を含み、当該ナノ粒子が1以上のヘテロ接合を含む請求項1〜13のいずれか1項に記載の方法。
- 前記ナノ構造材料が量子ドットを含む請求項1〜13のいずれか1項に記載の方法。
- オーバーコートフッ素含有層と共にナノ構造材料層を含む複合体を含むデバイス。
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US20160365478A1 (en) | 2016-12-15 |
KR20150077345A (ko) | 2015-07-07 |
CN104952698A (zh) | 2015-09-30 |
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TWI688115B (zh) | 2020-03-11 |
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