TW201108311A - Process for aligning nanoparticles - Google Patents

Abstract

The invention relates to a process for aligning conducting or semiconducting nanoparticles, to a process for preparing electronic devices comprising such aligned nanoparticles, and to electronic devices prepared by these processes.

Description

201108311 VI. Description of the Invention: [Technical Field] The present invention relates to a method for aligning conductive or semiconductor nanoparticles, a method for preparing an electronic device comprising the aligned nanoparticles, and the like The electronic device produced. [Prior Art] Various nanoelectronic and photonic applications can be realized by assembling conductive or semiconductor nanoparticles (such as nanowires or nanotubes) into nanoscale devices and circuits. Individual semiconductor nanowires have been configured as field effect transistors (FETs) (Xiang et al, Nature 441 (2006), 489-493), memory devices (Lee et al, Nature Nanotechnology 2 (2007), 626-630 ), photodetectors and solar cells (Tian et al, Nature 449 (2007), 885-889; Hayden et al, Nature Materials 5 (2006), 352-356), and sensors (Han et al., Chemical Physics Letters) 389 (2004), 176-180). More complex light-emitting diodes (LEDs) have been obtained using n- and p-type semiconductor nanowires or nanotubes (Gudiksen et al, Nature 415 (2002), 617-620) and complementary and diode logic devices (Bachtold et al., Science 9 (2001), 294, 1317-1320). The prior art description is based on a method of assembling a nanowire device from a bottom-up method or assembling a randomly distributed nanowire on a pre-patterned substrate. However, in terms of mass production, such methods are time consuming and too expensive to control and generally only achieve very low yields. Since a method for mass production of nanowires has also been published (Wan et al., Applied Physics Letters 84 (1) (2004), 124-126), there is a need for alignment and assembly by using such methods. .doc 201108311 The technology of rice noodles. Several methods of aligning and assembling nanowires by electric field assistance have been disclosed in the prior art. Thus, Cao et al, Nanotechnology 17 (2006), 23 78-23 80 describe a technique for controlling the alignment of silver nanowires by a DC electric field (DCEF). Among them, from the 8 〇 nm thick solid electrolyte RbAg4 film which is in contact with two 136 nm thick silver film electrodes, the silver nanowire is directly synthesized by applying DCEF between the silver electrodes. This results in the formation of oriented silver nanowires. However, although this method has been confirmed to directly prepare aligned nanowires, it is not suitable for nanowire alignment during mass production of electronic devices.

Motayed et al. 'Journai 〇f Applied Physics 1〇〇 (2〇〇6), 114310, Smith et al., Applied Physics Letters 77 (9) (2000), 1399-1401 ' and US 6,536,106 describe a pre-prepared GaN Or a method of Au nanowires, wherein the nanowires are dispersed in a liquid and deposited on a substrate covered with a patterned and finger-like electrode structure. When a non-uniform electric field is applied to the electrodes, the nanowires are aligned by a dielectrophoretic force. However, this method has several drawbacks. For example, it is required to manufacture an interdigitated electrode structure for applying an electric field having a complicated and fine pattern, which is disadvantageous for mass production. Further, the size and distance of the electrodes are in the same range as the size of the nanowires, so that the nanowires overlap the electrodes. In order to prevent the electrode fingers from directly contacting and thus short-circuiting due to the metal nanowire, it is necessary to cover the electrode with, for example, a protective layer of tantalum nitride deposited by chemical vapor deposition. Furthermore, this method is not suitable for nanowire alignment during mass production of electronic devices. Therefore, there is still a need for an improved, simple and effective method of aligning nanoparticles 148004.doc 201108311, which can be used not only for the manufacture of electronic devices such as transistors, but also for nanoparticle-based electronic devices such as diodes (led , light; polar body, 5 胄, and complementary and diode logic devices, which are used in Dali to produce such devices' and which do not have the disadvantages of the methods disclosed in the prior art as described above. It is an object of the present invention to provide such a modification. Another object of the present invention is to provide an improved electronic device 'particularly' a transistor and a solar cell obtained by the method. Other objects of the present invention are immediately apparent to those skilled in the art from the following detailed description. It is found that such objects can be achieved by providing a method as claimed in the present invention. SUMMARY OF THE INVENTION The present invention is directed to a method of orienting conductive or semiconductor nanoparticles comprising the steps of: 1) placing a pair of auxiliary electrodes on a substrate, and 2) depositing conductive or semiconductor nanoparticles between the auxiliary electrodes On the substrate, and 3) apply a voltage to the auxiliary electrode. Preferably, the nanoparticles are contacted with one or more device structures (preferably working electrodes rather than auxiliary electrodes). During the alignment, it is preferred not to apply a voltage to the device or the working electrode. Prerequisites for aligning nanoparticles are anisotropic, preferably elongated, such as nanowires, nanotubes, nanorods, nanoribbons, nanowhiskers, or even plate shapes, such as nano plate. The invention further relates to the use of nanoparticles aligned by the method of the invention in electron, electro-optical, electroluminescent or optical devices as charge transport,

[S 148004.doc 201108311 Use of conductive or semiconductor components. The invention further relates to a method of preparing an electronic, optoelectronic, electroluminescent or optical device, preferably an electronic device, comprising (iv): a) arranging a working electrode (a preferred source and a non-electrode (4)) in the wire layer ( 3) upper, b) placing the auxiliary electrode on the substrate (1) or the dielectric layer (3) so as not to be in contact with the working electrode (4), C) conducting or dispersing the conductive or semiconductor neat in the liquid as needed The rice particle layer (5) is deposited on the substrate (1) or the dielectric layer (3) and the working electrode (4) so that the nanoparticles are located between the auxiliary electrodes, d) the voltage is applied to the auxiliary electrode, e) the liquid is supplied as needed The rice particle layer (5) is removed, f) the auxiliary electrode is removed as needed, and g) one or more other functional sounds are provided on the nanoparticle layer as needed, wherein the steps can also be performed in different orders... ten sentences and ^ Preferably, such implementations are carried out in the specified order. The order of steps...〇 and d) can be changed and adjusted according to actual factors (female measures, etc.). Preferably, such a particle semiconductor. Preferably, the liquid is removed according to step e), more preferably while maintaining the voltage according to step d). Preferably, the electrode is removed after the removal of the liquid or the (4) provided in the sentence has been reduced to zero, according to step ten. Preferably, the auxiliary electrode is placed in the _ position such that at least two of the working electrodes (source and/or drain) are located at least partially or completely at the auxiliary electrode. between. More preferably, the power around the auxiliary and working electrodes is 148004.doc 201108311 The parallel alignment of the field direction is generally achieved by the parallel alignment of the electrodes on the surface of the electrode. Therefore, the layout is preferably perpendicular to the #' of the working electrode, the surface of the non-grained branch, and may end up in its isomorphic (semi)conductor structure. Forming a slender shape or a preferred position in the present invention; ^ r τ w is a permanent substrate, or a substrate or device equipped with an electrode as a supplementary electrode on each of the 浐, 士. In the =... the auxiliary electrode is a fixed electrode. Follow, remove the supplemental electrode. The accompanying 7 is retained on the substrate according to step e). A v , but once the aligned semi-particles are permanently fixed to the substrate, the “ “ “ * * * * 其 其 其 。 。 。 。 。 。 。 。 辅助The permanent electrode ¥, steps a) and b) can be carried out in a common procedure. The invention further relates to a device comprising a aligned nanoparticle by the context of the invention. The invention comprises an aligned nanowire and a working electrode=sub, electro-optical electroluminescent or optical device, wherein the aligned particles are connected to the working electrode. The working electrode preferably has no advantage of being separated from its surface. The device can be fabricated without connecting the working electrode to the voltage for alignment. The working electrode is preferably located on the substrate, preferably on a flat substrate. The surface of the substrate may be flat', i.e., there is no grating or the like for performing nanoparticle alignment by means of electric dust applied according to the present invention. A simple flat surface is easier to obtain than any other surface. The apparatus of the present invention preferably comprises a plurality of nanoparticles. The method of the present invention is particularly useful for aligning a plurality of nanoparticles, relative to other methods which are preferably useful for positioning only a single or a limited number of nanoparticles to a certain location. The device of the present invention preferably comprises a field effect transistor FET comprising: 148004.doc 201108311 - substrate (1), - gate electrode (2), - dielectric layer (3), - source and germanium electrode (4), And - a semiconductor layer (7) comprising nanoparticles aligned by a method as described above and below. In general, the semiconductor layer (5) is connected to the source and the germanium electrode (4). Electron, electro-optical, electroluminescent or optical devices including, but not limited to, (organic) field effect transistors ((〇) FET), integrated circuit (IC) (organic) thin film transistors ((o)tFT), RF Identification (RFID) tag, (organic) light-emitting diode 'LED', (organic) light-emitting transistor ((〇) LET), electroluminescence display crying, (organic) photovoltaic ((〇) PV) battery, ( Organic) solar cells ((〇_)s^), flexible (〇) PV and (〇-)SC, (organic) laser diode ((〇) laser), (organic) integrated circuit (( 0-) IC), illuminating device, sensing device, electrode material, photoconductor, photodetector, electrophotographic recording device, capacitor, charge injection layer, Schottky diode, planarization layer 'antistatic: , conductive substrate, conductive (four), photoconductor, electrophotographic device, organic memory device, biosensor, biochip, optical polarizer, optical resistor, and optical compensator. Definition of the terminology The term "auxiliary electrode" means the electrode. The auxiliary electrode is used only for any of the other components of the device of the present purpose, and is different from the electrode comprising the aligned nanoparticle. DEVICE ASSEMBLY OR DEVICE The term "movable electrode" means that it can be permanently mounted on a substrate 148004.doc 201108311 (preferably only for nanoparticle with auxiliary circuitry for substrate, device assembly or device movement) and The connection, for example, is mechanically fixed to the substrate, the skirt assembly or the device by mechanical means such as a centering device, a screw, etc., but can be easily removed again without damaging or damaging the electrodes of the substrate, the device or the device. Alignment Group The term "working electrode" means a non-auxiliary or movable electrode. The electrode refers specifically to the electrode of any device that is located near or directly at the position of the aligned nanoparticle. In the _ example, the work snow is messed up with a mussel or no electrode. For example, the source electrode of the transistor-like device and/or the term "nanoparticles" (also referred to in the literature as "nano-wires, nano-bars, nanorods, s, as defined in 7,344,961" The combination of the four-legged body, the nano-belt and/or the like, is incorporated herein by reference in its entirety. It preferably refers to the nanowire. The term "H family", "IV family" The term “period” means “at least one cross-sectional size, 〇 ,, ^ 地<1()(), and has an aspect ratio (length..width)>1 (), preferably > 5 〇, more > just any of the elongated, preferably electrically conductive or semiconducting particles may have a variable diameter or may have substantially uniform - straight. The second 'S' diameter is Keep away from the end of the nanowire (for example, again: Γ%, view or call). For the whole of the nanowire: (4) degrees, the nanowire can be straight or curved or meandered. In the present invention, the 'straight nanowire is better than (four), and the pure spiral is 148004.doc 201108311. The nanowire of the present invention can clearly exclude carbon nano#, and in special cases ^ M & amp tube 15G nm greater than the smallest diameter of the other elongated particles;

The dimensions are as defined for the nanowire. Not B [Embodiment] The nanoparticles for use in the present invention preferably have an anisotropic shape, i.e., they have different lengths and widths/diameters, for example, a nanowire or a rice. The diameter or width of the nanowire is generally in the range of tens to hundreds of nanometers, preferably 5 to (10) (10). The length of the nanoparticle is generally more than 5 〇〇 (10), preferably u1 〇〇 micron (four). The aspect ratio (long illusion is better than the anisotropic shape so that the nanoparticle tends to be oriented along the electric field. The nanowire and the nanotube are particularly preferred. The better is the semiconductor nanowire. ^The nanoparticle of the invention can be It may be non-uniform in the material properties, or may be non-uniform in the two-two embodiment (for example, a nanowire heterostructure), etc. may be prepared from substantially any conventional material and may be, for example, substantially Crystal form, substantially monocrystalline, polymorphous or amorphous. Generally, a variety of materials can be used to prepare the nano particles, including the non-limiting, selected from the group consisting of Iv semiconductors, πι_ν semiconductors, π_ family half V Body, transition metal' or alloy or mixture of the above: semiconductor material. Youjia _ family semiconductor system si, &, sn and its two gold better system ΠΙ· ν semiconductor and other 丨〗 Metal and/or v-group elements. Alloys of gold and II-VI semiconductors and their likes and/or % group elements. I and preferred semiconductor materials include, but are not limited to, si, Ge, se, Te , B, C (including diamond), p, B c, B_p (Bp6), B-C Sl" Ge ' Sl'Sn^-Ge-Sn ' SiC ' BN ' BP ' BAs ' 148004.doc 201108311 AIN, A1P, AlAs, AlSb, GaN, GaP, GaAs, GaSb

InN, InP, InAs, InSb, ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, BeS, BeSe, BeTe, MgS, MgSe, GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbO, PbS, PbSe, PbTe, CuF, CuCl, CuBr, Cul, AgF, AgCl, AgBr, Agl, BeSiN2, CaCN2, ZnGeP2

CdSnAs2, ZnSnSb2, CuGeP3, CuSi2P3, (Cu, Ag) (Al, Ga, In, Ti, Fe) (S, Se ' Te) 2, Si3N4, Ge3N4, Al2〇3, (A Bu Ga, In) 2 ( S, Se, Te) 3, Al 2 CO, and any suitable combination of two or more of the foregoing. Nanoparticles may also be composed of other materials or include other materials including, but not limited to, such as Au, Ni, Pd, ir, C〇, Cr, A1, Ti,

Metal metal alloys of Fe, Sn, etc., polymers including (semi)conductor polymers, ceramics, and/or combinations thereof. Other conductive or semi-materials may also be used. Nanoparticles can also be doped into a semiconductor. For example, the pots and the like may contain a dopant selected from the group consisting of: 胄 特定 特定 特定 Β Α Α Α 或 或 或 , , , , , , , , , , , , , , , , , , , , , , The dopant is selected from the group consisting of a π-group element, a deuterium/deuterium, and a dopant, selected from the group consisting of a group element, a special type I: a p-type dopant of C and Si, or selected from the group consisting of Brother, free Si, Ge, Sn, η-type dopants of the group. Also, e&Te m ^ can be composed of other kinds of materials by other known nano-particles, but can also be used as a material. The shell of the core is composed of different materials or core/shell structures, wherein the core and the package have, for example, different compositions or materials comprising different materials or material compositions. For example, the core/shell nanowire may be composed of a nanowire core and a nanowire shell comprising, for example, a group IV element independently selected from the group consisting of C, Si, Ge, and Sn. The shell may also be composed of an insulating material (e.g., an oxide of a Group IV element) or an insulating material. In the case of a core/shell nanowire, in the case of a P-type doped line, the valence band of the insulating shell may be lower than the valence band of the core, or in the case of an η-type doping line, the conductive strip of the shell may be Higher than the nuclear. In general, the core nanostructure can be made from any metal or semiconductor material, and the shell can be made from the same or different materials. For example, the first core material may comprise a first semiconductor selected from the group consisting of a II-VI semiconductor, a III-V semiconductor, a Group IV semiconductor, and the like. Similarly, the second shell material may comprise the same or different first semiconductor and, for example, a second semiconductor selected from the group consisting of II-VI semiconductors, III-V semiconductors, Group IV semiconductors, and alloys thereof . Examples of suitable semiconductors include, but are not limited to, CdSe, CdTe, InP, InAs, CdS, ZnS, ZnSe, ZnTe, HgTe, GaN, GaP, GaAs, GaSb, InSb, Si, Ge, AlAs, AlSb, PbSe, PbS, and PbTe. As described above, a metal material such as Au, Cr, Sn, Ni, A1, or the like and the like can be used as the core material, and the metal core can be coated with a suitable shell material (e.g., SiO 2 or other insulating material). An organic monolayer is typically deposited on the nanowire. This layer can have several effects as follows: - The nanowire can be more preferably dispersed in a solvent. - Protect the nanowire from oxidation. 148004.doc -12- 201108311 - Change the work function of the nanowire. The organic monolayer may be of many types depending on the above functions, for example, an alkyl group, an alkanethiol type, etc., as described in j. Am chem s〇c (2〇〇4), 126 (47), 15466. The nanowire or nanobelt may also include a carbon nanotube or a nanotube made of a conductive or semiconductive organic material (e.g., pentacene, an organic polymer) or a transition metal oxide. Nanoparticles can be made by a variety of different methods. For example, the use of solution-based, surfactant-mediated crystal growth to produce spherical inorganic nanoparticles (e.g., quantum dots) and elongated nanoparticles (e.g., nanorods and nanotetrapods) has been described. Other methods have also been used to make nanoparticles, including gas phase processes. For example, it has been disclosed to prepare a ruthenium crystal by laser pyrolysis of a decane gas. One suitable method for preparing the nanowires utilizes a solution of a solution from a suitable precursor material (e.g., a metal halide or an organometallic compound of the above elements). This can be achieved, for example, by exposing the nanowire precursor to metal nanocrystals in a nanowire growth solution containing an organic solvent at a suitable temperature. Metal nanocrystals act as seed particles that catalyze the growth of semiconductor nanowires. The metal nanocrystals may be formed from the metal nanocrystal precursor in the original growth solution, or the nanocrystals may be pre-prepared and subsequently added to the growth solution. Suitable metal nanocrystal systems are known from prior art. Suitable materials and shapes of nanoparticles and methods for their preparation are generally known to those skilled in the art and are disclosed in the literature, for example, in the above cited text.

Contributed to, or in US 2005/0029678 Al; A.T. Heitsch, D.D 1480Q4.doc -13- 201108311

Fanfair, H.-Y. Tuan and Β_Α·Korgel, J. Am. Chem. Soc. (2008), 130, 5346-7; T. Hanrath, Β·Α·Korgel, J. Am, Chem. Soc. 126 (2004), 15466-72; D. Fanfair et al., Crystal Growth & Design 5 (2005), 1971-6; AM· Morales et al.

</ RTI> </ RTI> </ RTI> <RTIgt; </ RTI> </ RTI> <RTIgt; </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> The entire disclosure of the above-mentioned documents for the manufacture of nanowires is incorporated herein by reference. Dry and 丨 Ί 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配 配A voltage is applied to the two auxiliary electrodes. For nano-particle towels with conductor or semi-four characteristics, when the nano particles are placed in an electric field, 'electrons or charge carriers can be easily moved...the nano particles are dispersed in the dielectric f (the general liquid) In the case of, for example, a solvent), the individual nanoparticles are separated so that there is no contact between them. When an external electric field is applied across the liquid, the positive or negative charge in a single nanoparticle shifts the phase electric field to the different ends of the anisotropic nanoparticle. Since there is no contact between the nanoparticles, the charge will accumulate at the end of the individual nano-greens until the electric field caused by the moving charge is equal to the applied electric field. Because of the various directions of the rice particles, ..., &quot;τ', the charge on both ends of the nanoparticle will form a dipole. Mangtai water is negative. The right non-water particles can move freely in the liquid, and the formed dipole will make its # along the external electric field line. ^ 148004.doc • 14 - 201108311 F = aELsin0cos9 The power (F) applied to the dipole is proportional to the nanoparticle length (L), the electric field strength (E) and the factor sinecose, where a is the dielectric of the solvent. The constant and the constant of the free charge density in the nanowire, and the angle between the longitudinal axis of the θ-line nanowire and the electric field. This principle also applies to the case of an AC field where the charge will vary correspondingly with the external field. The power applied to the nanoparticles will cause them to align along the electric field lines in the same manner as described above. The frequency of the alternating field can vary greatly. It is preferred to use a frequency from the lower limit to 1 MHz. Higher frequencies above 5 kHz may be preferred due to their low effect on the human body due to short circuits. It is especially good at frequencies from Hz to 5 kHz. Preferably, the voltage applied to the alignment method is an Ac voltage. To align the nanoparticles, an electrode pair is used to form an electric field. This can be accomplished by depositing electrodes on the substrate or by using one or more movable electrodes (preferably a pair of similar electrodes). Preferably, the auxiliary electrode is a movable electrode. Therefore, after being used in the nanoparticle alignment method, they do not form part of the final framework of the device. The movable electrode is placed on a substrate or device or device assembly on which the nanoparticles are to be aligned. The electrodes can be in direct contact with the substrate. The electrodes may, for example, be fixed by a fixing member such that they are in direct contact with the substrate, or are in close proximity to the substrate at a short distance (contact or a distance of 10 microns) without contacting the substrate. They are connected to the power source so that a voltage can be applied to establish an electric field of a desired intensity (preferably 1 to 250 kV/m). The distance between the two auxiliary or movable electrodes should preferably be greater than the anisotropic

[S 148004.doc 201108311 The longitudinal dimension β of the rice particles is then deposited by any suitable method to deposit a nanoparticle on the substrate area between the auxiliary electrode, or the device or device assembly, while applying a voltage to the electrode. The method of prior art aligning nanoparticles for applying an electric field for alignment with the patterned S/D electrodes of the 〇E device described in the prior art section has several advantages over the method of the present invention. Therefore, since the external electrode is used, the distance can be easily changed and thereby the electric field strength can be changed, and a higher voltage can be applied without risk of damaging the device electrode or its connected components. This is particularly advantageous because the deposited nanoparticles can be in direct contact with the device electrodes such that when a high voltage is required for the electrodes of such devices to apply a good alignment, an electrical short can occur, which subsequently destroys the nanoparticles and the device. . This risk can be avoided due to the use of external electrodes. For the same reason, it is not necessary to provide a protective insulating layer between the device electrode and the nanoparticle as used in the prior art method in the method of the present invention. For this technique, flexible, gravure, spray, roll-to-roll, and inkjet printing techniques can also be utilized to effect nanoparticle deposition by a rapid alignment method. Liquid deposition techniques using liquids containing nanoparticles are preferred. Preferred deposition techniques include, but are not limited to, spin coating, dip coating, meniscus coating, ink jet printing, ink immersion, letterpress printing, screen printing 'blade coating, roller printing, reverse roller printing, Lithographic lithography, fast-drying, gravure, roll-to-paper, spray, brush or pad printing. It is particularly good for flexographic printing, gravure printing and inkjet printing. In order to be coated by liquid deposition techniques, the nanoparticles should first be dispersed in a liquid or solvent suitable for use in 148004.doc -16 - 201108311. The dielectric of the liquid is very important because it is used as a dielectric medium. The particles of the rice should be fully divided, and the a&quot; government also provides freedom for the NW orientation under the electric field. The liquid dielectric medium can be a solvent or a solvate, preferably an organic solvent. A preferred bath is generally dependent on the nature of the surface. In the case of non-passivation, if the surface is oxidized, an alcohol type solvent is usually used. Many organic solvents can be used in the case of surface-purified NWffij δ '. The polarization of the solvent can also be important for NW dispersion: if the polar solvent has a high dielectric constant, the external electric field can easily touch the nanoparticles without excessive loss in the liquid. Generally, a dielectric constant of more than 5 (2 (TC) is preferred. The preferred liquid and solvent depend on the type of the monolayer of the encapsulated nanoparticle. Most of the alkyl or olefinic monolayer For the medium, a good solvent is a solvent such as chloroform and dichlorobenzene. Preferably, the liquid generally contains a chlorine, 1,2-dichlorobenzene, methyl ethyl ketone or benzoin. A solvent having a high dipole moment. It is also good for cars, especially solvents with a permanent dipole moment of 1,5 D (Debye) or higher. Solvents may additionally contain one or more other components 'for example, surface active compounds, lubricants, wetting agents , dispersants, hydrophobic agents, adhesives, flow improvers, defoamers' degassing agents, reactive or non-reactive diluents, additives, colorants, dyes or pigments, sensitizers, stabilizers, other nemesis Rice particles or inhibitors. After depositing the nanoparticle solution and aligning the nanoparticles, it is preferred to remove the solvent, for example, by evaporation at ambient temperature and pressure. Heat may also be applied and/or pressure may be reduced to accelerate evaporation. 148004.doc •17· 201108311 Two additional functional layers or one Or a plurality of protective layers covering the aligned nanoparticle layer, for example, depositing a polymer dielectric layer on the top surface of the top gate type transistor, or a u polymer protective layer to prevent oxygen from damaging the nano particles. Aligned nanoparticles of the invention are used as charge transport, semiconductor, conductive, photoconductive or luminescent materials in electronic 'electro-optical, electroluminescent, photoluminescent or optical components or devices. j good device systems, FETs, TFTs, IC, logic circuit, capacitor, Han (four) sign LED LET, PV, solar cell, laser diode, photoconductor, photodetector, electrophotographic device, electrophotographic recording device, organic a memory board, sensing device, Charge injection layer, Schottky triode, planarization layer, antistatic film, substrate and conductive pattern. In such devices, the aligned nanoparticles of the present invention are generally applied as a thin layer or a film. FET and TFT ° The preferred electronic device comprises the following components: - one substrate (1) as needed, - one or more conductors, preferably a tie electrode (2, 4), - an insulating layer containing a dielectric (3) ), - containing aligned nanoparticle Semiconductor Layer (5). A first preferred embodiment of the present invention is directed to a bottom gate type (BQ) FET device as exemplarily shown in FIG. 1, which comprises the following components in the order described below: - one of the substrates as needed ( 1), - gate electrode (2), - dielectric layer containing dielectric (3), 148004.doc • 18· 201108311 - source and germanium electrode (4), and - conductive containing aligned nanoparticles (or Preferably, the method for preparing the BG transistor device comprises the steps of: - applying a gate electrode (2) to the substrate (1), - applying a dielectric layer (3) to the gate electrode (2) and the top surface of the substrate (1), - applying the source and the germanium electrode (4) to the top surface of the dielectric layer (3), - placing a pair of auxiliary electrodes on the dielectric layer (3) So that it does not contact the source and the ruthenium electrode (4), - deposit a layer of semiconductor nanoparticles (5) dispersed in a solvent or solvent mixture with or without a binder as needed on the dielectric layer (3) And the source and the ytterbium electrode (4) so that the nanoparticles are located between the auxiliary electrodes, - applying a voltage to the auxiliary electrode, - if necessary, the liquid is from the nanoparticle layer (5) ) removal, - removal of the auxiliary electrode as needed, and - providing one or more other functional layers on the nanoparticle layer as needed. The second preferred embodiment is directed to a top gate type (TG) FET device, as exemplarily shown in Fig. 2, which comprises the following components in the order described below: - a substrate (1), - source and germanium electrodes ( 4) - a semiconductor layer (5) comprising aligned nanoparticles, - an insulating layer (3) comprising a dielectric, and - a gate electrode (2). The method for preparing the TG transistor device preferably comprises the steps of: - applying a source and a germanium electrode (4) to the substrate (1), 148004.doc -19·201108311 - placing a pair of auxiliary electrodes on the substrate (1) On the 'substrate so that it does not contact the source and the electrode (4), the semiconductor nanoparticle layer (5) which is dispersed in a solvent or solvent mixture with or without a binder as needed is deposited on the substrate (! And the source and the yttrium electrode (4) so that the nanoparticles are located between the auxiliary electrodes, - applying a voltage to the auxiliary electrode, _ removing the liquid from the nanoparticle layer (5) as needed, - removing as needed An auxiliary electrode, - a dielectric layer (3) is applied to the top surface of the nanoparticle layer (5), and a gate electrode (2) is applied to the top surface of the dielectric layer. Variations in the structure and method of such devices can be readily implemented by those skilled in the art using conventional methods and materials known in the art, for example, to provide a top contact (TG) or bottom contact (BC) transistor device. The gate, source and drain electrodes and the insulating and semiconductor layers in the FET device can be arranged in any order. The limiting conditions are source and no power; the system is separated from the electrode by the insulating layer. The gate electrode and the semiconductor layer are both insulated and insulated. Contact, and both the source electrode and the non-electrode are in contact with the semiconductor layer. In a more general method, the method of preparing an electronic device (preferably a semi-transparent electronic device) is as follows: a word electrode (a preferred source and a germanium electrode (4)) is applied to the substrate (1) or a dielectric layer ( 3) upper, b) placing the auxiliary electrode on the substrate (1) or the dielectric layer (1) so as not to be in contact with the source and the germanium electrode (4), C) conducting or dispersing the conductive or semiconductor in the liquid as needed Nanoparticle layer (5) 148004.doc •20- 201108311 Deposited on substrate (1) or dielectric layer (3) and source &amp; no electrode (4) so that the nanoparticles are located between the auxiliary electrodes, d) Apply voltage to the auxiliary electrode, e) remove the liquid from the nanoparticle layer (5) as needed, f) remove the auxiliary electrode as needed, and g) provide on the nanoparticle layer as needed - or multiple other functional layers Wherein steps b), 〇, d) and nai particles may be carried out in a different order. Preferably, the liquid portion is: or completely removed when the electric field between the auxiliary electrodes is still present. The required electric field is typically maintained by applying the required voltage. Other components of the device, suitable materials, and methods of making the same are known to those skilled in the art and are described in the literature (eg, us 7, Q29, 9 for example. 'A variety of substrates can be used (eg, glass or plastic) To manufacture the device of the present invention. Generally, a plastic material is preferred. Examples include alkyd resin, propyl vinegar, benzocyclobutene, butyl benzene, cellulose, cellulose acetate, and rings. Oxide 'epoxy polymer, ethylene-chlorotrifluoroethylene, ethylene-tetrafluoroethylene, fiberglass reinforced plastic, carbon fiber polymer, hexa-propylene propylene propylene vinylene copolymer, high density polyethylene, poly pair Diphenylbenzene, polystyrene, polyamidiamine, polyarsenamide, polydimethyl oxalate, polyether hard, polyethylene, polyethylene naphthalate, polyethylene terephthalate Diester, poly-, polymethyl methacrylate, gemini, polystyrene, vinyl, polyurethane, polyvinyl chloride, polyoxet, polychlorite, preferably The substrate material is poly(p-dibenzoic acid), polyglycolide, 148004.doc -21 - 201108311 and polyethylene naphthalate The substrate may also comprise any plastic material, metal or glass coated with the above materials. The substrate should preferably be uniform to ensure good pattern definition. The substrate can also be extruded, stretched, rubbed or lighted by light. Chemical techniques are uniformly pre-aligned to direct organic semiconductors to enhance carrier mobility. 'Original and gate electrodes can be coated by liquids such as spray coating, dip coating, web coating or spin coating' or Deposition by vacuum deposition or vapor deposition methods. Suitable electrode materials and deposition methods are known to those skilled in the art. Suitable electrode materials include, but are not limited to, inorganic or organic materials, or a combination of the two. Examples of conductor or electrode materials include polyaniline, polypyroxene, PEDQT or doped co-polymers, other graphite dispersions or paste stone reverse-nano- or graphene sheets or such as Au, Ag, a, Metal particles of or a mixture thereof, and sputter coated or vapor-deposited metals such as, for example, Cu, Cr, etc., and semiconductors such as, for example, ITO. Organometallic precursors deposited from liquid phase may also be used.The PV device of the present invention preferably comprises: • a low work function electrode (eg, )), a high work function electrode (eg, ΙΤ0), one of which is transparent, - a hole transport and electron transport material, and the like A single blend or double layer of the mixture; the bilayer can exist as two distinct layers, or as a blending mixture (see, for example, Coakley, Κ.Μ and McGehee, MD chem

Mater. (2004), 16, 4533), _ a conductive polymer layer that changes the work function of the high work function electrode to provide an ohmic contact for the hole (eg, for example, pED〇T:pSs), 148004. Doc -22· 201108311 It is desirable to provide an ohmic coating (such as LiF) for the electrons on the high work function electrode, comprising the aligned nanoparticle of the present invention, wherein the hole and/or electron transport material is 0 electron transport The material may also be an inorganic seal such as oxidized or cadmium selenide, or an organic material such as a fullerene derivative or an η·negative nanoparticle and a wire (for example, PCBM, [(6, 6) _phenyl C61_butyric acid methyl vinegar] or agglomerates, see, for example, Coakley, KM &amp; McGehee, MD

Chem. Mater. (2004), 16, 4533) The beta hole transport material can be self-p-doped nanoparticles and nanowires. Alternatively, the aligned nanoparticles of the present invention can be used, for example, as an organic light-emitting device or diode (LED) in a display application, or as a light-receiving device for, for example, a liquid crystal display. Common led systems are obtained using a multilayer structure. The emissive layer is typically sandwiched between one or more electron transport and/or hole transport layers. By applying a voltage, the electrons and holes that act as charge carriers move toward the emissive layer, which is equivalent to recombining here to cause excitation and, in turn, to cause the light emitting unit contained in the emissive layer to emit light. Depending on its isoelectric and/or optical properties, the aligned nanoparticles can be used in one or more of the charge transport layer and/or the emissive layer of the LED device. For example, an electroluminescent nanowire can be used as the emission layer in an LED device as described in US 6,918,946 and US 6,846,565. Aligned nanoparticles comprising a conductive material can also be used as a substitute for, but not limited to, metals in the following applications: charge injection layer and ITO planarization layer in LED applications, flat panel display and touch screen film 'Antistatic film, printed conductive substrate, electronics such as printed circuit boards and capacitors should be used in patterns or traces. 148004.doc -23- · 201108311 Since the nanoparticles, especially the nanowires or nanotubes, which are aligned by the method of the present invention have high anisotropy, they can be used alone or in combination with other materials in optical components or devices such as optical polarizers. If the lines in a large area are aligned in parallel, they will form a wire-grid structure of long individual lines, which in turn can be used as a wire grid polarizer (Wgp). The conceptually simplest polarizer is a wire grid polarizer consisting of a regular array of fine parallel wires arranged in a plane perpendicular to the incident beam. One of the electric fields is parallel to the line-aligned electromagnetic wave to induce electrons to move along the length of the line. Since the electrons are free to move, when reflecting light, the polarization month works in a similar manner as a metal surface; a portion of the energy is lost due to Joule heat in the line' and the remaining waves are reflected back along the incident beam. Insofar as the electric field is perpendicular to the wave of the line, electrons cannot move too far along the width of each line; therefore, energy is hardly lost or reflected, and the incident wave can propagate through the grid. Since the electric field component parallel to the line is absorbed or reflected, the transmitted wave has an electric field 'only in a direction perpendicular to the line' and is thus linearly polarized. For practical purposes, the separation distance between lines should be less than the wavelength of the radiation, and the line width should be a small part of this distance. This means that only wire grid polarizers are used for microwave and far and mid-infrared light. Using the technique of the present invention, an extremely narrow pitch grid of polarized light can be produced. Since the degree of polarization is almost independent of the incident wavelength and angle, WGP can be used for wideband applications such as projection. The words "including" and "including" and variations of such terms such as "including" and "including" means "including but not limited to" and are not intended to be used in the scope of the application. (and not) excludes 148004.doc •24-201108311: components. Unless otherwise expressly stated herein, the use of the plural <RTI ID=0.0>> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> </ RTI> is intended to include the singular and vice versa. In the present specification, unless otherwise stated, each feature may be replaced by alternative features for the same, equivalent or similar purpose. Thus, unless otherwise stated, the features disclosed are only one example of a generic series of equivalent bite-like features. All of the features disclosed in this specification and the patent specification can be combined in any combination, except that at least some of the features and/or steps are mutually exclusive combinations. In particular, preferred features of the invention are applicable to all aspects of the invention and can be used in any combination. Features described similarly in non-essential combinations can be used independently (non-combined). The invention will now be described in more detail with reference to the following examples, which are intended to be illustrative only and not limiting the scope of the invention. Abbreviation NW nanowire Au/Ge/Si/Al gold/锗/矽/aluminum AC/DC AC ac/dc, dc (BG) FET (bottom gate) field effect transistor OE organic electronic component LB method using lang Langmuir-Blodgett film method EFIA method electric field alignment method 14S004.doc -25- 201108311 PV photovoltaic S/D source and bungee WGP line thumb polarizer experiment by AT Heitsch et al The solid-liquid-solid (SLS) growth exemplified by J. Am. Chem. Soc. (2008) 130, 5436_7 produces the nanowires used in the examples of the present application. However, examples of the invention are not limited by the above and the literature Adv. Mater. (2004) 7, 646-649; J. Am. Chem. Soc. (2002) 124(7), 1424-1429, and Chem. Mater (2005) The nanowire prepared by the SLS method of any of the above, 5, 705-571. For example, a method based on vapor phase growth of nanowires can also be applied. Example 1 Ge nanowire (NW) aligned directly on a glass substrate. The alignment method used in this experiment is exemplarily described in Fig. 3, wherein (1) is a glass substrate, (7) is an auxiliary electrode, and (6) ) indicates a droplet containing NW. An electric field is provided by using an HP 8111A pulse/function generator 20 MHz and a Trek power amplifier (Model 603) provided by two parallel electrode strips (7) deposited on a clean glass substrate (1). The electrode (7) was applied as an A1 film deposited by a thermal evaporation method, and it had a thickness of 30 nm. The gap between the two electrodes (7) is 2 mm and the applied AC voltage is 50 to 500 V and 0.9 kHz. The NW dispersion is prepared by dispersing 0.1 mg Ge NW inactivated with isoprene in 1 ml of chloroform or 1 ml of methyl ethyl ketone, and is distributed as a droplet (6) between the electrodes (7). (1) on the top surface.

1A) NW from chloroform distribution 148004.doc • 26· 201108311 A Ge NW (all passivated by isoprene) dispersion is dispensed as a single droplet from a substrate between two electrodes to which an electric field is applied, using a glass pipette on. After evaporation of the vapor, NW is deposited on the substrate. Figure 4 shows an optical image taken after completely evaporating the solvent, wherein (7) is one of the A1 electrodes. It can be observed that a portion of the NW has been aligned in the electric field. It is believed that this is caused by the NW alignment induced by the electric field, as described above. However, it can be seen from Figure 4 that the number of aligned NWs is lower than the total number of NWs, which can be attributed to the solvent used. Here, the evaporation rate of chloroform is so high that NW does not have enough time to complete the orientation. Therefore, it is recommended to use a solvent having a lower evaporation rate to extend the time during which the NW is oriented in the liquid under the action of the electric field, and/or to use a higher electric field strength to increase the directional velocity of the NW.

1B) NW partitioned from butanone To reduce the evaporation rate of the solvent, a second experiment was carried out as described above, except that butanone (ch3c(o)ch2ch3) was used instead of the gas imitation. Butanone can well distribute isoprene-passivated Ge NW like chloroform. However, butanone evaporates slowly compared to gas imitation and can therefore stay on the substrate for a few seconds before complete evaporation; this time is sufficient to align the NW between the electrodes. Figure 5 shows an optical image taken after the solvent has completely evaporated, wherein (7) is one of the A1 electrodes. Clearly visible NW (2) is aligned in the AC electric field. However, there is a flow forward or backward along the electrode that is stronger than the power applied to the NW, and thus can destroy the aligned NW that has formed in the solution. This can also be observed in Figure 5: NW (5) near the electrode is aligned and even distributed, NW away from the electrode is aligned, but not evenly distributed and some parts are also damaged, it is suspected that the use of optical Caused by the flow current observed by the microscope. 148004.doc •27- 201108311 1C) Orientation of Ge NW in the cell The above experiment shows that the boiling point of the solvent plays an important role in controlling the electric field alignment. The lower solvent evaporation rate allows the NW to have more time to be discharged under the electric field. However, the solvent flow stream can still destroy the aligned NW beam. To solve this problem, capillary force was used in another experiment to introduce the NW dispersion into the encapsulation unit, whereupon an electric field was applied. In this unit, an electrode having a gap of 2 mm is deposited on a glass substrate by evaporation, a spacer of 1 mm is added to the edge of the substrate, and then another glass substrate is placed on the first substrate. On the top. The gap between the two substrates is 〇. 1 mm and it is used as a capillary channel. The NW solution was dropped onto the edge of the unit and it immediately entered the unit due to capillary forces. When the solution covers the channel or gap between the two electrodes, a voltage of 75 to 750 V AC at a frequency of 0.9 kHz is applied to the electrode gap. Figure 6 shows the aligned NW after evaporation of the solvent. It is clearly visible that the NW system is aligned along the electric field line. In summary, it was confirmed that the electric field can be used to align Ge NW. In Example 1, it was confirmed that the quality of the NW alignment depends on the control of the solvent used and the evaporation rate. Thus, good alignment can be achieved by selecting a high boiling point solvent or by encapsulating the NW dispersion in the unit&apos; and performing an electric field induced alignment there. Example 2 Field-Initiated Orientation (EFIA) for Fabricating FETs Using Ge NW The above method can still be modified to produce OE devices on a large scale. For example, if NW is to be deposited on a large number of (&gt;l〇3) FET channels, a specific electrode is deposited 148004.doc -28 - 201108311 on each channel and an electric field is applied thereto. In addition, the electric field applied to the individual regions can affect the electric field applied to other regions. This method is very complicated and not suitable for industrial use. A simpler and more useful method that can be implemented on an industrial scale is described below. For this purpose, a pair of germanium electrodes are used for the % applied electric field, which can be located anywhere on the substrate. Figure 7 illustrates a method for twinning and imaginatively describing a Ge NW disposed on the top surface of a selected single BG FET device including a bottom gate electrode and a Si NMOS as a dielectric. 2 layers of germanium substrate (1). On the top surface of the SiO 2 layer, an Au source and a ruthenium electrode (4) are provided. Connected to the AC power source (8) - the movable column electrode (7) is placed on the device. The gap between the two column electrodes (7) is 1 to 2 mm. The voltage applied to the column electrode was fixed to 75 〇 v, 0.9 kHz. The method for aligning Ge NW is carried out as follows: 1. Place the column electrode (7) at the desired area of the device. 2. Apply a voltage to the column electrode (7) to ensure that the applied electric field is present when the Nw dispersion is placed on the substrate. 3. From the glass pipette will! ^... The dispersion (6) in butanone is partitioned between two columns of electrodes. Since the surface of the BG 矽FET substrate is sufficiently wetted, the Nw droplets diffuse not only in the region between the electrodes but also in the vicinity. 4. The time for the alignment of the nanowires under these conditions is less than 丨 minutes. Since the solvent can still move the nanowire during evaporation, the electric field needs to be maintained until most of the solvent has evaporated. 148004.doc •29· 201108311 5. Remove the post electrode (7). Figure 8 shows two optical images taken after solvent removal. Figure 8A shows the complete 2 〇 bg ρ Ε τ device located between the two column electrodes. The original position i of the two column electrodes can be viewed from the middle (4). Figure 8B shows an enlarged view of the central device area shown in the circle. It can be seen that the Nw system is aligned in a direction perpendicular to the s/d electrode fingers. Fig. 9 shows the transmission characteristics of the BG FET device in which the semiconductor layer is fabricated by the EFIA method as described above. Ge Nw has a switching ratio higher than 102 and has a very steep sub-critical wipe S of 6.55 V/ten units (v/deeade).

Comparative Example 1: Preparation of a FET BG FET device using Ge NW aligned by LB (Langmuer Blodgett) technology was prepared as follows: The substrate system was the same as that described in Example 1, and was a Si〇2 dielectric layer. A bottom gate substrate having a patterned S/D electrode thereon. The substrates are cleaned as in the standard 矽 substrate cleaning method. A Ge Nw solution having a concentration of Oj mg/ml was prepared by using a chloroform solvent. Two to three drops of the solution are dropped onto the water in the beaker. After the solution droplet reaches the surface, the solvent evaporates rapidly, leaving the nanowire to form one or more layers of the layer on the water surface. The above substrate previously placed in the solution was slowly moved from the lower surface to the nanowire layer' and then removed from the water. The NW layer is attached and deposited on the substrate. Dry the bottom gate nanowire FET and wait for the test. 148004.doc •30- 201108311 Figure 10 shows an optical image of a Ge NW (deposited by LB method) on a 20 μιη S/D channel BG FET (on a Shih-hs substrate), and Figure 11 shows the transmission characteristics of the device. . Its switch is lower than the device of the present invention. By comparing the transfer characteristics of the BG fet device prepared by the EFIA method described in Example 2 with the transfer characteristics of the TG FET deposited by the LB technique, it is clear that the device obtained by the EFIA method exhibits improved performance. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 schematically depicts a bottom gate FET device of the present invention comprising a substrate (1) 'gate electrode (2), a dielectric layer (3), a source and a germanium electrode (4), and The semiconductor layer (5) of the nanoparticles is aligned by a method as described above and below. 2 schematically depicts a top gate FET device of the present invention comprising a substrate (1) 'gate electrode (2), a dielectric layer (3), a source and a drain electrode (4), and including by the context The method is to align the semiconductor layer of the nanoparticle (5). Fig. 3 schematically depicts an alignment method used in the example ,, in which a droplet (6) containing N W is placed on top of a substrate (丨) between a pair of electrodes (7). Figure 4 shows an optical image of a nanowire aligned by the method of Example A. One of the electrodes (7) is displayed on the right hand side. Figure 5 shows an optical image of the nanowires aligned by the method of Example 1B. It depicts the electrode (7) and the deposited nanowire (5). Figure 6 shows an optical image of a nanowire aligned between a pair of electrodes (7) by the method of Example c. Figure 7 is not a case). The method of aligning used in Example 2 is depicted. The figure shows a substrate (1) covered by an &amp; additional layer U gate electrode, Si〇2 dielectric layer, and a pair of column electrodes (7) formed on the substrate, and a pair of column electrodes (7) connected to the column J48004.doc 201108311 Μ) AC power supply, and a pipette ready to distribute the nanowire dispersion between the electrodes (7) and (4). The electrode (7) is centered at the intersection of the gate electrode (4). Figure 8 shows the optical image of the bottom gate with the aligned nanowire according to Example 2. The center portion of the intersection of the comb electrodes on the left side is shown on the right side in approximately magnification. In the enlarged view, see:: The rice ray spans between the electrodes. I I February. The transmission characteristics of the bottom gate type positive device made according to Example 2. The lower gate voltage (V) ’ vertical axis shows the measured value at the drain current of 3V, and the lower curve shows the measured value at 1V. The curve is not shown in Fig. = the comparative example of the optical structure of the bottom-fate device of the wound. A 'd, wood line (bright figure 1 1 § 5 - characteristics. Μ according to the comparative example 丨 prepared bottom gate FET device transmission [main symbol description] 1 substrate 2 3 4 5 6 7 8 gate electrode dielectric layer Source and germanium electrode semiconductor layers (Fig. 1 NW droplet auxiliary electrode AC power source 2); NW (Fig. 5) 148004.doc -32,

Claims (1)

201108311 VII. Patent application scope: 1. A kind of ortho-conducting or semiconductor nano-particles: "When going" includes the following steps: 1) A pair of auxiliary electrodes are placed on a substrate, 2) Conductive or semiconductor nanoparticle-based H (4) (4) 3) between the auxiliary electrodes, apply voltage to the pair of auxiliary electrodes, and the steps 2 and 3 may be reversed as needed. 2. If the method of requesting the item is too high, you and the a method selected from the group consisting of: "rods, nanotubes, nanoribbons, and/or combinations thereof, 3. "" or 2" characterized in that the distance between the two auxiliary electrodes is greater than the deposited The longitudinal dimension of the rice particles. 4. The method of claim 1 or 2 characterized in that the nanoparticles comprise a group consisting of a Group IV semiconductor, a ΠΙ-ν semiconductor, a ΐΜα semiconductor, a transition metal, or an alloy or mixture of the foregoing. One or more semiconductor materials. In the case of claim 1 or 2, the complex micro-force will be characterized in that the nano-particles are dispersed in the liquid. 6. The method of claim 1 or 2, wherein the two auxiliary electrodes are removed after the alignment is completed. 7. The method of claim 1 or 2, wherein the nano-particles are aligned with one or more devices: f·雷#二1•• pole instead of The two auxiliary electrodes are in contact. 8. Use of a nanoparticle 148004.doc 201108311 aligned by the method of any one of claims 1 to 7 as a charge transport or conductive or semiconductor component in an electronic, electrooptical, electroluminescent or optical device. A method of preparing an electronic, electro-optical, electroluminescent or optical device, comprising the steps of: applying a working electrode (4) to a substrate (1) or a dielectric layer (3), b) a pair of auxiliary electrodes are disposed on the substrate (1) or the dielectric layer (3) so as not to be in contact with the working electrodes (4), c) conductive or semiconductor neats to be dispersed in the liquid as needed a rice particle layer (5) is deposited on the substrate (1) or the dielectric layer (3) and the working electrodes (4) such that the nanoparticles are located between the auxiliary electrodes. d) applying a voltage to the two auxiliary electrodes, e) removing the liquid from the nanoparticle layer (5) as needed, 0 removing the auxiliary electrodes as needed, g) optionally on the nanoparticle layer Provided - or a plurality of other functional layers, wherein steps b), c), d) and f) can be implemented in a different order. 10. The method of claim 9, the permanent electrode. Prepared by the method of any one of claims 9 to 11. Wherein the two auxiliary electrodes are on the substrate, characterized in that they are The alignment nanoparticles are connected to the working electrodes. The device and the electrode of the working electrode are characterized by the device of claim 12 or 13, characterized in that it is a field effect transistor 148004.doc 201108311 body comprising a substrate (1), a gate electrode ( 2), a dielectric layer (3), a source and a germanium electrode (4), and a semiconductor layer comprising aligned nanoparticles (5) 148004.doc