JP5611212B2 - 基板のアニールにおける熱量の管理 - Google Patents

基板のアニールにおける熱量の管理 Download PDF

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Publication number
JP5611212B2
JP5611212B2 JP2011526919A JP2011526919A JP5611212B2 JP 5611212 B2 JP5611212 B2 JP 5611212B2 JP 2011526919 A JP2011526919 A JP 2011526919A JP 2011526919 A JP2011526919 A JP 2011526919A JP 5611212 B2 JP5611212 B2 JP 5611212B2
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Japan
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substrate
energy
region
annealing
temperature
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JP2011526919A
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English (en)
Japanese (ja)
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JP2012503311A (ja
JP2012503311A5 (enExample
Inventor
スティーヴン モファット，
スティーヴン モファット，
アブヒラッシュ， ジェイ． マユール，
アブヒラッシュ， ジェイ． マユール，
サンダール ラママーシー，
サンダール ラママーシー，
ジョゼフ ラニッシュ，
ジョゼフ ラニッシュ，
アーロン ハンター，
アーロン ハンター，
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Priority claimed from US12/212,214 external-priority patent/US8314369B2/en
Priority claimed from US12/212,157 external-priority patent/US20100068898A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2012503311A publication Critical patent/JP2012503311A/ja
Publication of JP2012503311A5 publication Critical patent/JP2012503311A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Furnace Details (AREA)
JP2011526919A 2008-09-17 2009-09-03 基板のアニールにおける熱量の管理 Expired - Fee Related JP5611212B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12/212,214 US8314369B2 (en) 2008-09-17 2008-09-17 Managing thermal budget in annealing of substrates
US12/212,157 2008-09-17
US12/212,214 2008-09-17
US12/212,157 US20100068898A1 (en) 2008-09-17 2008-09-17 Managing thermal budget in annealing of substrates
PCT/US2009/055838 WO2010033389A1 (en) 2008-09-17 2009-09-03 Managing thermal budget in annealing of substrates

Publications (3)

Publication Number Publication Date
JP2012503311A JP2012503311A (ja) 2012-02-02
JP2012503311A5 JP2012503311A5 (enExample) 2012-10-18
JP5611212B2 true JP5611212B2 (ja) 2014-10-22

Family

ID=42039812

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011526919A Expired - Fee Related JP5611212B2 (ja) 2008-09-17 2009-09-03 基板のアニールにおける熱量の管理

Country Status (7)

Country Link
EP (1) EP2342739A4 (enExample)
JP (1) JP5611212B2 (enExample)
KR (2) KR101868378B1 (enExample)
CN (1) CN102160157B (enExample)
SG (2) SG193882A1 (enExample)
TW (3) TWI549190B (enExample)
WO (1) WO2010033389A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8546805B2 (en) * 2012-01-27 2013-10-01 Ultratech, Inc. Two-beam laser annealing with improved temperature performance
US9376731B2 (en) * 2012-05-08 2016-06-28 Applied Materials, Inc. Magneto-thermal processing apparatus and methods
US9239192B2 (en) * 2013-02-20 2016-01-19 Taiwan Semiconductor Manufacturing Co., Ltd. Substrate rapid thermal heating system and methods
CN104752174A (zh) * 2013-12-30 2015-07-01 上海微电子装备有限公司 一种激光退火装置及方法
TW201610215A (zh) * 2014-03-27 2016-03-16 應用材料股份有限公司 用於低熱預算處理的循環尖峰退火化學曝露
CN107112548A (zh) * 2014-10-31 2017-08-29 应用材料公司 激光处理与电化学元件层沉积的整合
KR102494614B1 (ko) * 2015-03-20 2023-02-02 어플라이드 머티어리얼스, 인코포레이티드 3d 형상추종성 처리를 위한 원자 층 프로세스 챔버
KR102531865B1 (ko) * 2015-07-29 2023-05-16 어플라이드 머티어리얼스, 인코포레이티드 회전하는 기판의 레이저 어닐링
JP6887234B2 (ja) 2016-09-21 2021-06-16 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
KR102099890B1 (ko) * 2017-05-18 2020-04-14 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102061424B1 (ko) * 2018-07-27 2019-12-31 주식회사 코윈디에스티 로이 유리 어닐링 장치
KR102180311B1 (ko) 2018-07-27 2020-11-18 주식회사 코윈디에스티 레이저 어닐링 장치
CN112038223A (zh) * 2020-08-27 2020-12-04 上海华力集成电路制造有限公司 一种改善双激光退火过程中晶圆表面热分布的方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5696835A (en) * 1979-12-29 1981-08-05 Fujitsu Ltd Manufacture of semiconductor device
JPS58106836A (ja) * 1981-12-18 1983-06-25 Hitachi Ltd レ−ザ−アニ−ル装置
JPS58176929A (ja) * 1982-04-09 1983-10-17 Fujitsu Ltd 半導体装置の製造方法
JPH03266424A (ja) * 1990-03-16 1991-11-27 Sony Corp 半導体基板のアニール方法
US5643801A (en) * 1992-11-06 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser processing method and alignment
US6423585B1 (en) * 1997-03-11 2002-07-23 Semiconductor Energy Laboratory Co., Ltd. Heating treatment device, heating treatment method and fabrication method of semiconductor device
KR20010006155A (ko) * 1998-02-13 2001-01-26 야스카와 히데아키 반도체장치의 제조방법 및 열처리장치
US6771895B2 (en) * 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
TW457553B (en) * 1999-01-08 2001-10-01 Sony Corp Process for producing thin film semiconductor device and laser irradiation apparatus
WO2001064591A1 (en) * 2000-03-01 2001-09-07 Heraeus Amersil, Inc. Method, apparatus, and article of manufacture for determining an amount of energy needed to bring a quartz workpiece to a fusion weldable condition
JP2003045820A (ja) * 2001-07-30 2003-02-14 Semiconductor Energy Lab Co Ltd レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法
US6987240B2 (en) 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
US7098155B2 (en) * 2003-09-29 2006-08-29 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
TWI297521B (en) * 2004-01-22 2008-06-01 Ultratech Inc Laser thermal annealing of lightly doped silicon substrates
US7482254B2 (en) * 2005-09-26 2009-01-27 Ultratech, Inc. Apparatus and methods for thermally processing undoped and lightly doped substrates without pre-heating
US20080045040A1 (en) * 2006-08-17 2008-02-21 Toshiba America Electronic Components, Inc. Laser Spike Anneal With Plural Light Sources
JP2008080371A (ja) * 2006-09-27 2008-04-10 Sumitomo Heavy Ind Ltd レーザ加工方法、及び、レーザ加工装置

Also Published As

Publication number Publication date
TWI549191B (zh) 2016-09-11
EP2342739A1 (en) 2011-07-13
TW201013789A (en) 2010-04-01
TWI549190B (zh) 2016-09-11
TW201342480A (zh) 2013-10-16
CN102160157A (zh) 2011-08-17
TW201415558A (zh) 2014-04-16
JP2012503311A (ja) 2012-02-02
SG193882A1 (en) 2013-10-30
KR101800404B1 (ko) 2017-11-22
CN102160157B (zh) 2015-11-25
TWI419234B (zh) 2013-12-11
KR20170130616A (ko) 2017-11-28
EP2342739A4 (en) 2013-05-22
WO2010033389A1 (en) 2010-03-25
SG10201807844VA (en) 2018-10-30
KR20110053387A (ko) 2011-05-20
KR101868378B1 (ko) 2018-06-18

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