TWI549190B - 管理基材退火的熱預算 - Google Patents

管理基材退火的熱預算 Download PDF

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Publication number
TWI549190B
TWI549190B TW102122198A TW102122198A TWI549190B TW I549190 B TWI549190 B TW I549190B TW 102122198 A TW102122198 A TW 102122198A TW 102122198 A TW102122198 A TW 102122198A TW I549190 B TWI549190 B TW I549190B
Authority
TW
Taiwan
Prior art keywords
energy
substrate
source
zone
annealing
Prior art date
Application number
TW102122198A
Other languages
English (en)
Chinese (zh)
Other versions
TW201342480A (zh
Inventor
莫非特史帝夫
梅爾艾伯希拉許Ｊ
拉瑪姆爾非桑達
拉尼許喬瑟夫
漢特亞倫
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/212,214 external-priority patent/US8314369B2/en
Priority claimed from US12/212,157 external-priority patent/US20100068898A1/en
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201342480A publication Critical patent/TW201342480A/zh
Application granted granted Critical
Publication of TWI549190B publication Critical patent/TWI549190B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Furnace Details (AREA)
TW102122198A 2008-09-17 2009-09-09 管理基材退火的熱預算 TWI549190B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/212,214 US8314369B2 (en) 2008-09-17 2008-09-17 Managing thermal budget in annealing of substrates
US12/212,157 US20100068898A1 (en) 2008-09-17 2008-09-17 Managing thermal budget in annealing of substrates

Publications (2)

Publication Number Publication Date
TW201342480A TW201342480A (zh) 2013-10-16
TWI549190B true TWI549190B (zh) 2016-09-11

Family

ID=42039812

Family Applications (3)

Application Number Title Priority Date Filing Date
TW102122198A TWI549190B (zh) 2008-09-17 2009-09-09 管理基材退火的熱預算
TW098130387A TWI419234B (zh) 2008-09-17 2009-09-09 管理基材退火的熱預算
TW102141287A TWI549191B (zh) 2008-09-17 2009-09-09 管理基材退火的熱預算

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW098130387A TWI419234B (zh) 2008-09-17 2009-09-09 管理基材退火的熱預算
TW102141287A TWI549191B (zh) 2008-09-17 2009-09-09 管理基材退火的熱預算

Country Status (7)

Country Link
EP (1) EP2342739A4 (enExample)
JP (1) JP5611212B2 (enExample)
KR (2) KR101868378B1 (enExample)
CN (1) CN102160157B (enExample)
SG (2) SG193882A1 (enExample)
TW (3) TWI549190B (enExample)
WO (1) WO2010033389A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8546805B2 (en) * 2012-01-27 2013-10-01 Ultratech, Inc. Two-beam laser annealing with improved temperature performance
US9376731B2 (en) * 2012-05-08 2016-06-28 Applied Materials, Inc. Magneto-thermal processing apparatus and methods
US9239192B2 (en) * 2013-02-20 2016-01-19 Taiwan Semiconductor Manufacturing Co., Ltd. Substrate rapid thermal heating system and methods
CN104752174A (zh) * 2013-12-30 2015-07-01 上海微电子装备有限公司 一种激光退火装置及方法
TW201610215A (zh) * 2014-03-27 2016-03-16 應用材料股份有限公司 用於低熱預算處理的循環尖峰退火化學曝露
CN107112548A (zh) * 2014-10-31 2017-08-29 应用材料公司 激光处理与电化学元件层沉积的整合
KR102494614B1 (ko) * 2015-03-20 2023-02-02 어플라이드 머티어리얼스, 인코포레이티드 3d 형상추종성 처리를 위한 원자 층 프로세스 챔버
KR102531865B1 (ko) * 2015-07-29 2023-05-16 어플라이드 머티어리얼스, 인코포레이티드 회전하는 기판의 레이저 어닐링
JP6887234B2 (ja) 2016-09-21 2021-06-16 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
KR102099890B1 (ko) * 2017-05-18 2020-04-14 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102061424B1 (ko) * 2018-07-27 2019-12-31 주식회사 코윈디에스티 로이 유리 어닐링 장치
KR102180311B1 (ko) 2018-07-27 2020-11-18 주식회사 코윈디에스티 레이저 어닐링 장치
CN112038223A (zh) * 2020-08-27 2020-12-04 上海华力集成电路制造有限公司 一种改善双激光退火过程中晶圆表面热分布的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020050488A1 (en) * 2000-03-01 2002-05-02 Dmitri Nikitin Method and apparatus for thermally processing quartz using a plurality of laser beams
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
JP2005210129A (ja) * 2004-01-22 2005-08-04 Ultratech Inc 低濃度ドープされたシリコン基板のレーザ熱アニール
JP2006501636A (ja) * 2002-04-18 2006-01-12 アプライド　マテリアルズ　インコーポレイテッド 走査による熱束処理
US7038174B2 (en) * 1999-01-06 2006-05-02 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
JPS5696835A (en) * 1979-12-29 1981-08-05 Fujitsu Ltd Manufacture of semiconductor device
JPS58106836A (ja) * 1981-12-18 1983-06-25 Hitachi Ltd レ−ザ−アニ−ル装置
JPS58176929A (ja) * 1982-04-09 1983-10-17 Fujitsu Ltd 半導体装置の製造方法
JPH03266424A (ja) * 1990-03-16 1991-11-27 Sony Corp 半導体基板のアニール方法
US5643801A (en) * 1992-11-06 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser processing method and alignment
US6423585B1 (en) * 1997-03-11 2002-07-23 Semiconductor Energy Laboratory Co., Ltd. Heating treatment device, heating treatment method and fabrication method of semiconductor device
KR20010006155A (ko) * 1998-02-13 2001-01-26 야스카와 히데아키 반도체장치의 제조방법 및 열처리장치
TW457553B (en) * 1999-01-08 2001-10-01 Sony Corp Process for producing thin film semiconductor device and laser irradiation apparatus
JP2003045820A (ja) * 2001-07-30 2003-02-14 Semiconductor Energy Lab Co Ltd レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法
US7098155B2 (en) * 2003-09-29 2006-08-29 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
US7482254B2 (en) * 2005-09-26 2009-01-27 Ultratech, Inc. Apparatus and methods for thermally processing undoped and lightly doped substrates without pre-heating
US20080045040A1 (en) * 2006-08-17 2008-02-21 Toshiba America Electronic Components, Inc. Laser Spike Anneal With Plural Light Sources
JP2008080371A (ja) * 2006-09-27 2008-04-10 Sumitomo Heavy Ind Ltd レーザ加工方法、及び、レーザ加工装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7038174B2 (en) * 1999-01-06 2006-05-02 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US20020050488A1 (en) * 2000-03-01 2002-05-02 Dmitri Nikitin Method and apparatus for thermally processing quartz using a plurality of laser beams
JP2006501636A (ja) * 2002-04-18 2006-01-12 アプライド　マテリアルズ　インコーポレイテッド 走査による熱束処理
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
JP2005210129A (ja) * 2004-01-22 2005-08-04 Ultratech Inc 低濃度ドープされたシリコン基板のレーザ熱アニール

Also Published As

Publication number Publication date
TWI549191B (zh) 2016-09-11
EP2342739A1 (en) 2011-07-13
TW201013789A (en) 2010-04-01
TW201342480A (zh) 2013-10-16
CN102160157A (zh) 2011-08-17
TW201415558A (zh) 2014-04-16
JP2012503311A (ja) 2012-02-02
SG193882A1 (en) 2013-10-30
KR101800404B1 (ko) 2017-11-22
CN102160157B (zh) 2015-11-25
TWI419234B (zh) 2013-12-11
KR20170130616A (ko) 2017-11-28
EP2342739A4 (en) 2013-05-22
JP5611212B2 (ja) 2014-10-22
WO2010033389A1 (en) 2010-03-25
SG10201807844VA (en) 2018-10-30
KR20110053387A (ko) 2011-05-20
KR101868378B1 (ko) 2018-06-18

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