KR101868378B1 - 기판의 어닐링시 열량 관리 - Google Patents

기판의 어닐링시 열량 관리 Download PDF

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Publication number
KR101868378B1
KR101868378B1 KR1020177033214A KR20177033214A KR101868378B1 KR 101868378 B1 KR101868378 B1 KR 101868378B1 KR 1020177033214 A KR1020177033214 A KR 1020177033214A KR 20177033214 A KR20177033214 A KR 20177033214A KR 101868378 B1 KR101868378 B1 KR 101868378B1
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South Korea
Prior art keywords
energy
substrate
zone
annealing
temperature
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Expired - Fee Related
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KR1020177033214A
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English (en)
Korean (ko)
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KR20170130616A (ko
Inventor
스티븐 모파트
아브힐라쉬 제이. 마우어
선다 라마무리티
조셉 라니쉬
아론 헌터
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어플라이드 머티어리얼스, 인코포레이티드
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Priority claimed from US12/212,157 external-priority patent/US20100068898A1/en
Priority claimed from US12/212,214 external-priority patent/US8314369B2/en
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20170130616A publication Critical patent/KR20170130616A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Furnace Details (AREA)
KR1020177033214A 2008-09-17 2009-09-03 기판의 어닐링시 열량 관리 Expired - Fee Related KR101868378B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12/212,157 US20100068898A1 (en) 2008-09-17 2008-09-17 Managing thermal budget in annealing of substrates
US12/212,214 US8314369B2 (en) 2008-09-17 2008-09-17 Managing thermal budget in annealing of substrates
US12/212,214 2008-09-17
US12/212,157 2008-09-17
PCT/US2009/055838 WO2010033389A1 (en) 2008-09-17 2009-09-03 Managing thermal budget in annealing of substrates

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020117008790A Division KR101800404B1 (ko) 2008-09-17 2009-09-03 기판의 어닐링시 열량 관리

Publications (2)

Publication Number Publication Date
KR20170130616A KR20170130616A (ko) 2017-11-28
KR101868378B1 true KR101868378B1 (ko) 2018-06-18

Family

ID=42039812

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020177033214A Expired - Fee Related KR101868378B1 (ko) 2008-09-17 2009-09-03 기판의 어닐링시 열량 관리
KR1020117008790A Expired - Fee Related KR101800404B1 (ko) 2008-09-17 2009-09-03 기판의 어닐링시 열량 관리

Family Applications After (1)

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KR1020117008790A Expired - Fee Related KR101800404B1 (ko) 2008-09-17 2009-09-03 기판의 어닐링시 열량 관리

Country Status (7)

Country Link
EP (1) EP2342739A4 (enExample)
JP (1) JP5611212B2 (enExample)
KR (2) KR101868378B1 (enExample)
CN (1) CN102160157B (enExample)
SG (2) SG193882A1 (enExample)
TW (3) TWI419234B (enExample)
WO (1) WO2010033389A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8546805B2 (en) * 2012-01-27 2013-10-01 Ultratech, Inc. Two-beam laser annealing with improved temperature performance
US9376731B2 (en) * 2012-05-08 2016-06-28 Applied Materials, Inc. Magneto-thermal processing apparatus and methods
US9239192B2 (en) * 2013-02-20 2016-01-19 Taiwan Semiconductor Manufacturing Co., Ltd. Substrate rapid thermal heating system and methods
CN104752174A (zh) * 2013-12-30 2015-07-01 上海微电子装备有限公司 一种激光退火装置及方法
TW201610215A (zh) * 2014-03-27 2016-03-16 應用材料股份有限公司 用於低熱預算處理的循環尖峰退火化學曝露
JP2018500721A (ja) * 2014-10-31 2018-01-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 電気化学デバイス層の堆積とレーザ処理の統合
CN107431033B (zh) * 2015-03-20 2021-10-22 应用材料公司 用于3d共形处理的原子层处理腔室
EP3329510B1 (en) * 2015-07-29 2022-04-13 Applied Materials, Inc. Rotating substrate laser anneal
JP6887234B2 (ja) 2016-09-21 2021-06-16 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
KR102099890B1 (ko) * 2017-05-18 2020-04-14 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102180311B1 (ko) 2018-07-27 2020-11-18 주식회사 코윈디에스티 레이저 어닐링 장치
KR102061424B1 (ko) * 2018-07-27 2019-12-31 주식회사 코윈디에스티 로이 유리 어닐링 장치
CN112038223A (zh) * 2020-08-27 2020-12-04 上海华力集成电路制造有限公司 一种改善双激光退火过程中晶圆表面热分布的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58176929A (ja) * 1982-04-09 1983-10-17 Fujitsu Ltd 半導体装置の製造方法
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
US20050103998A1 (en) * 2003-09-29 2005-05-19 Somit Talwar Laser thermal annealing of lightly doped silicon substrates
KR20050076768A (ko) * 2004-01-22 2005-07-27 울트라테크 인크. 저농도로 도핑된 실리콘 기판의 레이저 열 어닐링
JP2006501636A (ja) * 2002-04-18 2006-01-12 アプライド　マテリアルズ　インコーポレイテッド 走査による熱束処理

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5696835A (en) * 1979-12-29 1981-08-05 Fujitsu Ltd Manufacture of semiconductor device
JPS58106836A (ja) * 1981-12-18 1983-06-25 Hitachi Ltd レ−ザ−アニ−ル装置
JPH03266424A (ja) * 1990-03-16 1991-11-27 Sony Corp 半導体基板のアニール方法
US5643801A (en) * 1992-11-06 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser processing method and alignment
US6423585B1 (en) * 1997-03-11 2002-07-23 Semiconductor Energy Laboratory Co., Ltd. Heating treatment device, heating treatment method and fabrication method of semiconductor device
KR20010006155A (ko) * 1998-02-13 2001-01-26 야스카와 히데아키 반도체장치의 제조방법 및 열처리장치
US6771895B2 (en) * 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
TW457553B (en) * 1999-01-08 2001-10-01 Sony Corp Process for producing thin film semiconductor device and laser irradiation apparatus
WO2001064591A1 (en) * 2000-03-01 2001-09-07 Heraeus Amersil, Inc. Method, apparatus, and article of manufacture for determining an amount of energy needed to bring a quartz workpiece to a fusion weldable condition
JP2003045820A (ja) * 2001-07-30 2003-02-14 Semiconductor Energy Lab Co Ltd レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法
US7482254B2 (en) * 2005-09-26 2009-01-27 Ultratech, Inc. Apparatus and methods for thermally processing undoped and lightly doped substrates without pre-heating
US20080045040A1 (en) * 2006-08-17 2008-02-21 Toshiba America Electronic Components, Inc. Laser Spike Anneal With Plural Light Sources
JP2008080371A (ja) * 2006-09-27 2008-04-10 Sumitomo Heavy Ind Ltd レーザ加工方法、及び、レーザ加工装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58176929A (ja) * 1982-04-09 1983-10-17 Fujitsu Ltd 半導体装置の製造方法
EP0091806A2 (en) * 1982-04-09 1983-10-19 Fujitsu Limited A method for producing a single crystalline semiconductor layer
JP2006501636A (ja) * 2002-04-18 2006-01-12 アプライド　マテリアルズ　インコーポレイテッド 走査による熱束処理
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
US20050103998A1 (en) * 2003-09-29 2005-05-19 Somit Talwar Laser thermal annealing of lightly doped silicon substrates
KR20050076768A (ko) * 2004-01-22 2005-07-27 울트라테크 인크. 저농도로 도핑된 실리콘 기판의 레이저 열 어닐링
JP4843225B2 (ja) * 2004-01-22 2011-12-21 ウルトラテック インク 低濃度ドープされたシリコン基板のレーザ熱アニール

Also Published As

Publication number Publication date
KR101800404B1 (ko) 2017-11-22
KR20110053387A (ko) 2011-05-20
KR20170130616A (ko) 2017-11-28
JP2012503311A (ja) 2012-02-02
TW201415558A (zh) 2014-04-16
EP2342739A4 (en) 2013-05-22
CN102160157A (zh) 2011-08-17
TWI549190B (zh) 2016-09-11
TW201013789A (en) 2010-04-01
CN102160157B (zh) 2015-11-25
TWI419234B (zh) 2013-12-11
SG193882A1 (en) 2013-10-30
WO2010033389A1 (en) 2010-03-25
TW201342480A (zh) 2013-10-16
TWI549191B (zh) 2016-09-11
EP2342739A1 (en) 2011-07-13
SG10201807844VA (en) 2018-10-30
JP5611212B2 (ja) 2014-10-22

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