SG193882A1 - Managing thermal budget in annealing of substrates - Google Patents

Managing thermal budget in annealing of substrates Download PDF

Info

Publication number
SG193882A1
SG193882A1 SG2013069232A SG2013069232A SG193882A1 SG 193882 A1 SG193882 A1 SG 193882A1 SG 2013069232 A SG2013069232 A SG 2013069232A SG 2013069232 A SG2013069232 A SG 2013069232A SG 193882 A1 SG193882 A1 SG 193882A1
Authority
SG
Singapore
Prior art keywords
substrate
energy
preheat
anneal
zone
Prior art date
Application number
SG2013069232A
Other languages
English (en)
Inventor
Stephen Moffatt
Abhilash J Mayur
Sundar Ramamurthy
Joseph Ranish
Aaron Hunter
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/212,214 external-priority patent/US8314369B2/en
Priority claimed from US12/212,157 external-priority patent/US20100068898A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG193882A1 publication Critical patent/SG193882A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring

Landscapes

  • Recrystallisation Techniques (AREA)
  • Furnace Details (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
SG2013069232A 2008-09-17 2009-09-03 Managing thermal budget in annealing of substrates SG193882A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/212,214 US8314369B2 (en) 2008-09-17 2008-09-17 Managing thermal budget in annealing of substrates
US12/212,157 US20100068898A1 (en) 2008-09-17 2008-09-17 Managing thermal budget in annealing of substrates

Publications (1)

Publication Number Publication Date
SG193882A1 true SG193882A1 (en) 2013-10-30

Family

ID=42039812

Family Applications (2)

Application Number Title Priority Date Filing Date
SG2013069232A SG193882A1 (en) 2008-09-17 2009-09-03 Managing thermal budget in annealing of substrates
SG10201807844VA SG10201807844VA (en) 2008-09-17 2009-09-03 Managing thermal budget in annealing of substrates

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201807844VA SG10201807844VA (en) 2008-09-17 2009-09-03 Managing thermal budget in annealing of substrates

Country Status (7)

Country Link
EP (1) EP2342739A4 (enExample)
JP (1) JP5611212B2 (enExample)
KR (2) KR101868378B1 (enExample)
CN (1) CN102160157B (enExample)
SG (2) SG193882A1 (enExample)
TW (3) TWI419234B (enExample)
WO (1) WO2010033389A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8546805B2 (en) * 2012-01-27 2013-10-01 Ultratech, Inc. Two-beam laser annealing with improved temperature performance
US9376731B2 (en) * 2012-05-08 2016-06-28 Applied Materials, Inc. Magneto-thermal processing apparatus and methods
US9239192B2 (en) 2013-02-20 2016-01-19 Taiwan Semiconductor Manufacturing Co., Ltd. Substrate rapid thermal heating system and methods
CN104752174A (zh) * 2013-12-30 2015-07-01 上海微电子装备有限公司 一种激光退火装置及方法
TW201610215A (zh) * 2014-03-27 2016-03-16 應用材料股份有限公司 用於低熱預算處理的循環尖峰退火化學曝露
EP3213364A4 (en) * 2014-10-31 2018-05-02 Applied Materials, Inc. Integration of laser processing with deposition of electrochemical device layers
CN107431033B (zh) * 2015-03-20 2021-10-22 应用材料公司 用于3d共形处理的原子层处理腔室
JP6985249B2 (ja) * 2015-07-29 2021-12-22 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated 回転基板レーザアニール
JP6887234B2 (ja) 2016-09-21 2021-06-16 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
KR102099890B1 (ko) * 2017-05-18 2020-04-14 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102180311B1 (ko) 2018-07-27 2020-11-18 주식회사 코윈디에스티 레이저 어닐링 장치
KR102061424B1 (ko) * 2018-07-27 2019-12-31 주식회사 코윈디에스티 로이 유리 어닐링 장치
CN112038223A (zh) * 2020-08-27 2020-12-04 上海华力集成电路制造有限公司 一种改善双激光退火过程中晶圆表面热分布的方法
CN116092981A (zh) * 2023-02-01 2023-05-09 浙江芯科半导体有限公司 用于提升晶圆退火质量的激光退火设备

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5696835A (en) * 1979-12-29 1981-08-05 Fujitsu Ltd Manufacture of semiconductor device
JPS58106836A (ja) * 1981-12-18 1983-06-25 Hitachi Ltd レ−ザ−アニ−ル装置
JPS58176929A (ja) * 1982-04-09 1983-10-17 Fujitsu Ltd 半導体装置の製造方法
JPH03266424A (ja) * 1990-03-16 1991-11-27 Sony Corp 半導体基板のアニール方法
US5643801A (en) * 1992-11-06 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser processing method and alignment
US6423585B1 (en) * 1997-03-11 2002-07-23 Semiconductor Energy Laboratory Co., Ltd. Heating treatment device, heating treatment method and fabrication method of semiconductor device
US6187616B1 (en) * 1998-02-13 2001-02-13 Seiko Epson Corporation Method for fabricating semiconductor device and heat treatment apparatus
US6771895B2 (en) * 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
TW457553B (en) * 1999-01-08 2001-10-01 Sony Corp Process for producing thin film semiconductor device and laser irradiation apparatus
WO2001064591A1 (en) * 2000-03-01 2001-09-07 Heraeus Amersil, Inc. Method, apparatus, and article of manufacture for determining an amount of energy needed to bring a quartz workpiece to a fusion weldable condition
JP2003045820A (ja) * 2001-07-30 2003-02-14 Semiconductor Energy Lab Co Ltd レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法
US6987240B2 (en) * 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
US7098155B2 (en) * 2003-09-29 2006-08-29 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
TWI297521B (en) * 2004-01-22 2008-06-01 Ultratech Inc Laser thermal annealing of lightly doped silicon substrates
US7482254B2 (en) * 2005-09-26 2009-01-27 Ultratech, Inc. Apparatus and methods for thermally processing undoped and lightly doped substrates without pre-heating
US20080045040A1 (en) * 2006-08-17 2008-02-21 Toshiba America Electronic Components, Inc. Laser Spike Anneal With Plural Light Sources
JP2008080371A (ja) * 2006-09-27 2008-04-10 Sumitomo Heavy Ind Ltd レーザ加工方法、及び、レーザ加工装置

Also Published As

Publication number Publication date
KR101800404B1 (ko) 2017-11-22
TW201415558A (zh) 2014-04-16
KR20110053387A (ko) 2011-05-20
KR101868378B1 (ko) 2018-06-18
TWI549191B (zh) 2016-09-11
EP2342739A4 (en) 2013-05-22
CN102160157B (zh) 2015-11-25
JP5611212B2 (ja) 2014-10-22
WO2010033389A1 (en) 2010-03-25
JP2012503311A (ja) 2012-02-02
TWI419234B (zh) 2013-12-11
TW201342480A (zh) 2013-10-16
SG10201807844VA (en) 2018-10-30
TWI549190B (zh) 2016-09-11
EP2342739A1 (en) 2011-07-13
CN102160157A (zh) 2011-08-17
TW201013789A (en) 2010-04-01
KR20170130616A (ko) 2017-11-28

Similar Documents

Publication Publication Date Title
US9595459B2 (en) Managing thermal budget in annealing of substrates
US8314369B2 (en) Managing thermal budget in annealing of substrates
WO2010033389A1 (en) Managing thermal budget in annealing of substrates
TWI569347B (zh) 脈衝序列退火方法及其設備
US7674999B2 (en) Fast axis beam profile shaping by collimation lenslets for high power laser diode based annealing system
US6963692B2 (en) Heat-treating methods and systems
CN107123597B (zh) 脉冲序列退火方法和设备
US9263265B2 (en) Crystallization of amorphous films and grain growth using combination of laser and rapid thermal annealing
US8405175B2 (en) Suitably short wavelength light for laser annealing of silicon in DSA type systems
EP2478553A1 (en) Methods of solid phase recrystallization of thin film using pulse train annealing method
US9214346B2 (en) Apparatus and method to reduce particles in advanced anneal process
WO2008024211A2 (en) Fast axis beam profile shaping