SG193882A1 - Managing thermal budget in annealing of substrates - Google Patents
Managing thermal budget in annealing of substrates Download PDFInfo
- Publication number
- SG193882A1 SG193882A1 SG2013069232A SG2013069232A SG193882A1 SG 193882 A1 SG193882 A1 SG 193882A1 SG 2013069232 A SG2013069232 A SG 2013069232A SG 2013069232 A SG2013069232 A SG 2013069232A SG 193882 A1 SG193882 A1 SG 193882A1
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- energy
- preheat
- anneal
- zone
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 348
- 238000000137 annealing Methods 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 60
- 230000003287 optical effect Effects 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 19
- 239000000155 melt Substances 0.000 claims 1
- 230000008646 thermal stress Effects 0.000 abstract description 12
- 238000007669 thermal treatment Methods 0.000 abstract description 6
- 230000005670 electromagnetic radiation Effects 0.000 abstract description 5
- 230000008569 process Effects 0.000 description 35
- 238000012545 processing Methods 0.000 description 27
- 239000004065 semiconductor Substances 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 230000005855 radiation Effects 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000001816 cooling Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000001427 coherent effect Effects 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- PLXMOAALOJOTIY-FPTXNFDTSA-N Aesculin Natural products OC[C@@H]1[C@@H](O)[C@H](O)[C@@H](O)[C@H](O)[C@H]1Oc2cc3C=CC(=O)Oc3cc2O PLXMOAALOJOTIY-FPTXNFDTSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 230000008571 general function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000000135 prohibitive effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- XJKVPKYVPCWHFO-UHFFFAOYSA-N silicon;hydrate Chemical compound O.[Si] XJKVPKYVPCWHFO-UHFFFAOYSA-N 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Furnace Details (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/212,157 US20100068898A1 (en) | 2008-09-17 | 2008-09-17 | Managing thermal budget in annealing of substrates |
| US12/212,214 US8314369B2 (en) | 2008-09-17 | 2008-09-17 | Managing thermal budget in annealing of substrates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG193882A1 true SG193882A1 (en) | 2013-10-30 |
Family
ID=42039812
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013069232A SG193882A1 (en) | 2008-09-17 | 2009-09-03 | Managing thermal budget in annealing of substrates |
| SG10201807844VA SG10201807844VA (en) | 2008-09-17 | 2009-09-03 | Managing thermal budget in annealing of substrates |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201807844VA SG10201807844VA (en) | 2008-09-17 | 2009-09-03 | Managing thermal budget in annealing of substrates |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP2342739A4 (enExample) |
| JP (1) | JP5611212B2 (enExample) |
| KR (2) | KR101868378B1 (enExample) |
| CN (1) | CN102160157B (enExample) |
| SG (2) | SG193882A1 (enExample) |
| TW (3) | TWI419234B (enExample) |
| WO (1) | WO2010033389A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8546805B2 (en) * | 2012-01-27 | 2013-10-01 | Ultratech, Inc. | Two-beam laser annealing with improved temperature performance |
| US9376731B2 (en) * | 2012-05-08 | 2016-06-28 | Applied Materials, Inc. | Magneto-thermal processing apparatus and methods |
| US9239192B2 (en) * | 2013-02-20 | 2016-01-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Substrate rapid thermal heating system and methods |
| CN104752174A (zh) * | 2013-12-30 | 2015-07-01 | 上海微电子装备有限公司 | 一种激光退火装置及方法 |
| TW201610215A (zh) * | 2014-03-27 | 2016-03-16 | 應用材料股份有限公司 | 用於低熱預算處理的循環尖峰退火化學曝露 |
| JP2018500721A (ja) * | 2014-10-31 | 2018-01-11 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 電気化学デバイス層の堆積とレーザ処理の統合 |
| CN107431033B (zh) * | 2015-03-20 | 2021-10-22 | 应用材料公司 | 用于3d共形处理的原子层处理腔室 |
| EP3329510B1 (en) * | 2015-07-29 | 2022-04-13 | Applied Materials, Inc. | Rotating substrate laser anneal |
| JP6887234B2 (ja) | 2016-09-21 | 2021-06-16 | 株式会社日本製鋼所 | レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法 |
| KR102099890B1 (ko) * | 2017-05-18 | 2020-04-14 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| KR102180311B1 (ko) | 2018-07-27 | 2020-11-18 | 주식회사 코윈디에스티 | 레이저 어닐링 장치 |
| KR102061424B1 (ko) * | 2018-07-27 | 2019-12-31 | 주식회사 코윈디에스티 | 로이 유리 어닐링 장치 |
| CN112038223A (zh) * | 2020-08-27 | 2020-12-04 | 上海华力集成电路制造有限公司 | 一种改善双激光退火过程中晶圆表面热分布的方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5696835A (en) * | 1979-12-29 | 1981-08-05 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS58106836A (ja) * | 1981-12-18 | 1983-06-25 | Hitachi Ltd | レ−ザ−アニ−ル装置 |
| JPS58176929A (ja) * | 1982-04-09 | 1983-10-17 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH03266424A (ja) * | 1990-03-16 | 1991-11-27 | Sony Corp | 半導体基板のアニール方法 |
| US5643801A (en) * | 1992-11-06 | 1997-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method and alignment |
| US6423585B1 (en) * | 1997-03-11 | 2002-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Heating treatment device, heating treatment method and fabrication method of semiconductor device |
| KR20010006155A (ko) * | 1998-02-13 | 2001-01-26 | 야스카와 히데아키 | 반도체장치의 제조방법 및 열처리장치 |
| US6771895B2 (en) * | 1999-01-06 | 2004-08-03 | Mattson Technology, Inc. | Heating device for heating semiconductor wafers in thermal processing chambers |
| TW457553B (en) * | 1999-01-08 | 2001-10-01 | Sony Corp | Process for producing thin film semiconductor device and laser irradiation apparatus |
| WO2001064591A1 (en) * | 2000-03-01 | 2001-09-07 | Heraeus Amersil, Inc. | Method, apparatus, and article of manufacture for determining an amount of energy needed to bring a quartz workpiece to a fusion weldable condition |
| JP2003045820A (ja) * | 2001-07-30 | 2003-02-14 | Semiconductor Energy Lab Co Ltd | レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法 |
| US6987240B2 (en) * | 2002-04-18 | 2006-01-17 | Applied Materials, Inc. | Thermal flux processing by scanning |
| JP2004128421A (ja) * | 2002-10-07 | 2004-04-22 | Semiconductor Energy Lab Co Ltd | レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法 |
| US7098155B2 (en) * | 2003-09-29 | 2006-08-29 | Ultratech, Inc. | Laser thermal annealing of lightly doped silicon substrates |
| TWI297521B (en) * | 2004-01-22 | 2008-06-01 | Ultratech Inc | Laser thermal annealing of lightly doped silicon substrates |
| US7482254B2 (en) * | 2005-09-26 | 2009-01-27 | Ultratech, Inc. | Apparatus and methods for thermally processing undoped and lightly doped substrates without pre-heating |
| US20080045040A1 (en) * | 2006-08-17 | 2008-02-21 | Toshiba America Electronic Components, Inc. | Laser Spike Anneal With Plural Light Sources |
| JP2008080371A (ja) * | 2006-09-27 | 2008-04-10 | Sumitomo Heavy Ind Ltd | レーザ加工方法、及び、レーザ加工装置 |
-
2009
- 2009-09-03 WO PCT/US2009/055838 patent/WO2010033389A1/en not_active Ceased
- 2009-09-03 CN CN200980136613.5A patent/CN102160157B/zh not_active Expired - Fee Related
- 2009-09-03 SG SG2013069232A patent/SG193882A1/en unknown
- 2009-09-03 SG SG10201807844VA patent/SG10201807844VA/en unknown
- 2009-09-03 EP EP09814993.3A patent/EP2342739A4/en not_active Withdrawn
- 2009-09-03 KR KR1020177033214A patent/KR101868378B1/ko not_active Expired - Fee Related
- 2009-09-03 KR KR1020117008790A patent/KR101800404B1/ko not_active Expired - Fee Related
- 2009-09-03 JP JP2011526919A patent/JP5611212B2/ja not_active Expired - Fee Related
- 2009-09-09 TW TW098130387A patent/TWI419234B/zh not_active IP Right Cessation
- 2009-09-09 TW TW102141287A patent/TWI549191B/zh not_active IP Right Cessation
- 2009-09-09 TW TW102122198A patent/TWI549190B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR101800404B1 (ko) | 2017-11-22 |
| KR20110053387A (ko) | 2011-05-20 |
| KR20170130616A (ko) | 2017-11-28 |
| JP2012503311A (ja) | 2012-02-02 |
| TW201415558A (zh) | 2014-04-16 |
| EP2342739A4 (en) | 2013-05-22 |
| CN102160157A (zh) | 2011-08-17 |
| TWI549190B (zh) | 2016-09-11 |
| TW201013789A (en) | 2010-04-01 |
| CN102160157B (zh) | 2015-11-25 |
| TWI419234B (zh) | 2013-12-11 |
| WO2010033389A1 (en) | 2010-03-25 |
| TW201342480A (zh) | 2013-10-16 |
| TWI549191B (zh) | 2016-09-11 |
| KR101868378B1 (ko) | 2018-06-18 |
| EP2342739A1 (en) | 2011-07-13 |
| SG10201807844VA (en) | 2018-10-30 |
| JP5611212B2 (ja) | 2014-10-22 |
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