TWI419163B - 使用非揮發性奈米管的記憶體元件與交叉點開關及其陣列 - Google Patents
使用非揮發性奈米管的記憶體元件與交叉點開關及其陣列 Download PDFInfo
- Publication number
- TWI419163B TWI419163B TW096129300A TW96129300A TWI419163B TW I419163 B TWI419163 B TW I419163B TW 096129300 A TW096129300 A TW 096129300A TW 96129300 A TW96129300 A TW 96129300A TW I419163 B TWI419163 B TW I419163B
- Authority
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- Taiwan
- Prior art keywords
- switch
- nanotube
- block
- contact
- insulator
- Prior art date
Links
- 239000002071 nanotube Substances 0.000 title claims description 347
- 230000015654 memory Effects 0.000 title description 307
- 238000003491 array Methods 0.000 title description 11
- 239000012212 insulator Substances 0.000 claims description 191
- 239000010410 layer Substances 0.000 claims description 144
- 239000004020 conductor Substances 0.000 claims description 97
- 239000011241 protective layer Substances 0.000 claims description 20
- 229910052718 tin Inorganic materials 0.000 claims description 19
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 15
- 229910004541 SiN Inorganic materials 0.000 claims description 14
- -1 polyethylene fluoride Polymers 0.000 claims description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 13
- 229910019001 CoSi Inorganic materials 0.000 claims description 11
- 229910019899 RuO Inorganic materials 0.000 claims description 11
- 229910004166 TaN Inorganic materials 0.000 claims description 11
- 229910010165 TiCu Inorganic materials 0.000 claims description 11
- 229910008484 TiSi Inorganic materials 0.000 claims description 11
- 229910001258 titanium gold Inorganic materials 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 8
- 230000000638 stimulation Effects 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 238000004891 communication Methods 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 7
- 229910052741 iridium Inorganic materials 0.000 claims description 7
- 229910052745 lead Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 5
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims description 2
- 235000007164 Oryza sativa Nutrition 0.000 claims description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-O phosphonium Chemical compound [PH4+] XYFCBTPGUUZFHI-UHFFFAOYSA-O 0.000 claims description 2
- 235000009566 rice Nutrition 0.000 claims description 2
- 239000004743 Polypropylene Substances 0.000 claims 1
- 230000037361 pathway Effects 0.000 claims 1
- 229920001155 polypropylene Polymers 0.000 claims 1
- 239000005368 silicate glass Substances 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 185
- 238000003860 storage Methods 0.000 description 122
- 238000000034 method Methods 0.000 description 63
- 238000004519 manufacturing process Methods 0.000 description 48
- 239000000758 substrate Substances 0.000 description 27
- 238000005516 engineering process Methods 0.000 description 21
- 239000000463 material Substances 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 21
- 238000001878 scanning electron micrograph Methods 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 16
- 239000011159 matrix material Substances 0.000 description 15
- 230000010354 integration Effects 0.000 description 12
- 238000003786 synthesis reaction Methods 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- 229920000642 polymer Polymers 0.000 description 11
- 229910052732 germanium Inorganic materials 0.000 description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 239000002131 composite material Substances 0.000 description 9
- 238000009413 insulation Methods 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 238000000926 separation method Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 7
- 229920000379 polypropylene carbonate Polymers 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 229910001128 Sn alloy Inorganic materials 0.000 description 5
- 239000010953 base metal Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910001092 metal group alloy Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 150000004772 tellurides Chemical class 0.000 description 5
- 229910001316 Ag alloy Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910000846 In alloy Inorganic materials 0.000 description 4
- 229910000575 Ir alloy Inorganic materials 0.000 description 4
- 229910000978 Pb alloy Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910001020 Au alloy Inorganic materials 0.000 description 3
- 229910001182 Mo alloy Inorganic materials 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- 229910001252 Pd alloy Inorganic materials 0.000 description 3
- 229910001080 W alloy Inorganic materials 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000002086 nanomaterial Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000967 As alloy Inorganic materials 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- 229910000929 Ru alloy Inorganic materials 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 2
- 239000002238 carbon nanotube film Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000001351 cycling effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000006386 memory function Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002109 single walled nanotube Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229930091051 Arenine Natural products 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 102100029203 F-box only protein 8 Human genes 0.000 description 1
- 101100334493 Homo sapiens FBXO8 gene Proteins 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021392 nanocarbon Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000012925 reference material Substances 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- KHKSXAYMYFVLBL-UHFFFAOYSA-N tris(phosphanyl) phosphate Chemical compound POP(=O)(OP)OP KHKSXAYMYFVLBL-UHFFFAOYSA-N 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000003936 working memory Effects 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0064—Verifying circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/86—Masking faults in memories by using spares or by reconfiguring in serial access memories, e.g. shift registers, CCDs, bubble memories
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
- H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
- H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
- H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
- H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
- H10K10/29—Diodes comprising organic-inorganic heterojunctions
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0076—Write operation performed depending on read result
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/19—Memory cell comprising at least a nanowire and only two terminals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US83643706P | 2006-08-08 | 2006-08-08 | |
| US83634306P | 2006-08-08 | 2006-08-08 | |
| US84058606P | 2006-08-28 | 2006-08-28 | |
| US85510906P | 2006-10-27 | 2006-10-27 | |
| US91838807P | 2007-03-16 | 2007-03-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200826102A TW200826102A (en) | 2008-06-16 |
| TWI419163B true TWI419163B (zh) | 2013-12-11 |
Family
ID=39082936
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096129300A TWI419163B (zh) | 2006-08-08 | 2007-08-08 | 使用非揮發性奈米管的記憶體元件與交叉點開關及其陣列 |
| TW096129304A TWI457923B (zh) | 2006-08-08 | 2007-08-08 | 具有可調整尺寸的二端奈米管開關之非依電性電阻式記憶體、閂鎖電路、及操作電路 |
| TW096129308A TWI463673B (zh) | 2006-08-08 | 2007-08-08 | 非揮發性奈米管二極體與非揮發性奈米管塊材及使用該等之系統以及製造該等之方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096129304A TWI457923B (zh) | 2006-08-08 | 2007-08-08 | 具有可調整尺寸的二端奈米管開關之非依電性電阻式記憶體、閂鎖電路、及操作電路 |
| TW096129308A TWI463673B (zh) | 2006-08-08 | 2007-08-08 | 非揮發性奈米管二極體與非揮發性奈米管塊材及使用該等之系統以及製造該等之方法 |
Country Status (5)
| Country | Link |
|---|---|
| EP (5) | EP2057633B1 (enExample) |
| JP (4) | JP5410974B2 (enExample) |
| KR (3) | KR101169499B1 (enExample) |
| TW (3) | TWI419163B (enExample) |
| WO (3) | WO2008021912A2 (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8008745B2 (en) | 2005-05-09 | 2011-08-30 | Nantero, Inc. | Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements |
| US8102018B2 (en) | 2005-05-09 | 2012-01-24 | Nantero Inc. | Nonvolatile resistive memories having scalable two-terminal nanotube switches |
| US9911743B2 (en) | 2005-05-09 | 2018-03-06 | Nantero, Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
| EP2140492A1 (en) * | 2007-03-27 | 2010-01-06 | Sandisk 3D LLC | Memory cell comprising a carbon nanotube fabric element and a steering element and methods of forming the same |
| US7982209B2 (en) | 2007-03-27 | 2011-07-19 | Sandisk 3D Llc | Memory cell comprising a carbon nanotube fabric element and a steering element |
| US7667999B2 (en) | 2007-03-27 | 2010-02-23 | Sandisk 3D Llc | Method to program a memory cell comprising a carbon nanotube fabric and a steering element |
| JP5274799B2 (ja) * | 2007-08-22 | 2013-08-28 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| US8558220B2 (en) | 2007-12-31 | 2013-10-15 | Sandisk 3D Llc | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same |
| US8236623B2 (en) | 2007-12-31 | 2012-08-07 | Sandisk 3D Llc | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same |
| US20090166610A1 (en) * | 2007-12-31 | 2009-07-02 | April Schricker | Memory cell with planarized carbon nanotube layer and methods of forming the same |
| US8878235B2 (en) * | 2007-12-31 | 2014-11-04 | Sandisk 3D Llc | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same |
| US8530318B2 (en) | 2008-04-11 | 2013-09-10 | Sandisk 3D Llc | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same |
| JP2011520249A (ja) | 2008-04-11 | 2011-07-14 | サンディスク スリーディー，エルエルシー | 不揮発性メモリに使用されるカーボンナノチューブ膜をエッチングする方法 |
| US8304284B2 (en) | 2008-04-11 | 2012-11-06 | Sandisk 3D Llc | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same |
| US8110476B2 (en) | 2008-04-11 | 2012-02-07 | Sandisk 3D Llc | Memory cell that includes a carbon-based memory element and methods of forming the same |
| US8467224B2 (en) | 2008-04-11 | 2013-06-18 | Sandisk 3D Llc | Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom |
| EP2263273B1 (en) * | 2008-04-11 | 2012-05-16 | Sandisk 3D LLC | Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same |
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