TWI415694B - Substrate processing device and processing method thereof - Google Patents
Substrate processing device and processing method thereof Download PDFInfo
- Publication number
- TWI415694B TWI415694B TW97101146A TW97101146A TWI415694B TW I415694 B TWI415694 B TW I415694B TW 97101146 A TW97101146 A TW 97101146A TW 97101146 A TW97101146 A TW 97101146A TW I415694 B TWI415694 B TW I415694B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- liquid
- processing
- gas
- nanobubbles
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 154
- 238000012545 processing Methods 0.000 title claims abstract description 97
- 238000003672 processing method Methods 0.000 title claims description 4
- 239000002101 nanobubble Substances 0.000 claims abstract description 106
- 239000007788 liquid Substances 0.000 claims description 185
- 230000007246 mechanism Effects 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 14
- 238000002156 mixing Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 76
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 64
- 229910001868 water Inorganic materials 0.000 description 64
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 42
- 239000001301 oxygen Substances 0.000 description 42
- 229910052760 oxygen Inorganic materials 0.000 description 42
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 29
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 22
- 238000005530 etching Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 15
- 238000010008 shearing Methods 0.000 description 15
- 230000009471 action Effects 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000001569 carbon dioxide Substances 0.000 description 11
- 229910002092 carbon dioxide Inorganic materials 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 239000000243 solution Substances 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 9
- 229910001873 dinitrogen Inorganic materials 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000003570 air Substances 0.000 description 6
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 6
- 125000000129 anionic group Chemical group 0.000 description 5
- 125000002091 cationic group Chemical group 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000003405 preventing effect Effects 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 230000005653 Brownian motion process Effects 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000005537 brownian motion Methods 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Liquid Crystal (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007006061 | 2007-01-15 | ||
| JP2007226126A JP5252861B2 (ja) | 2007-01-15 | 2007-08-31 | 基板の処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200911395A TW200911395A (en) | 2009-03-16 |
| TWI415694B true TWI415694B (zh) | 2013-11-21 |
Family
ID=39757617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW97101146A TWI415694B (zh) | 2007-01-15 | 2008-01-11 | Substrate processing device and processing method thereof |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5252861B2 (enExample) |
| CN (1) | CN101578688B (enExample) |
| TW (1) | TWI415694B (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010153475A (ja) * | 2008-12-24 | 2010-07-08 | Sokudo Co Ltd | 基板処理装置および基板処理方法 |
| JP5666086B2 (ja) | 2008-12-25 | 2015-02-12 | ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ | シリコンウェハ洗浄装置 |
| JP2010221069A (ja) * | 2009-03-19 | 2010-10-07 | Kanto Auto Works Ltd | 塗装機の洗浄方法及び塗装装置 |
| JP5656245B2 (ja) * | 2010-06-17 | 2015-01-21 | 芝浦メカトロニクス株式会社 | 洗浄方法及び洗浄装置 |
| JP2012170872A (ja) * | 2011-02-21 | 2012-09-10 | Shibaura Mechatronics Corp | 基板洗浄装置、基板洗浄方法、表示装置の製造装置及び表示装置の製造方法 |
| JP2013191779A (ja) * | 2012-03-14 | 2013-09-26 | Toshiba Corp | 処理装置および処理方法 |
| CN104898324B (zh) * | 2014-03-07 | 2017-11-17 | 芝浦机械电子株式会社 | 接液处理装置、接液处理方法、基板处理装置及基板处理方法 |
| KR101519630B1 (ko) * | 2014-03-31 | 2015-05-14 | (주) 에스엠씨 | 에칭시스템 |
| JP6645900B2 (ja) | 2016-04-22 | 2020-02-14 | キオクシア株式会社 | 基板処理装置および基板処理方法 |
| TWI648098B (zh) * | 2017-11-14 | 2019-01-21 | 亞智科技股份有限公司 | 氣液混合機構、製程設備及氣液混合方法 |
| CN107952741A (zh) * | 2017-11-30 | 2018-04-24 | 江苏维仪工业科技有限公司 | 一种微纳米发生器在电镀水洗中的使用方法 |
| JP7580735B2 (ja) * | 2018-02-09 | 2024-11-12 | 国立大学法人 東京大学 | 難水溶性有機化合物の溶解システム、難水溶性有機化合物の溶解方法、及び匂い検出システム |
| CN110153057A (zh) * | 2018-02-14 | 2019-08-23 | 特铨股份有限公司 | 基板清洗设备以及基板清洗方法 |
| CN110045522A (zh) * | 2019-03-22 | 2019-07-23 | 湖南飞优特电子科技有限公司 | 一种lcd制程pi粉尘污迹不良的控制装置 |
| CN110473773B (zh) * | 2019-08-22 | 2022-03-22 | 北京北方华创微电子装备有限公司 | 晶圆清洗方法及晶圆清洗设备 |
| JP7265467B2 (ja) * | 2019-12-17 | 2023-04-26 | 株式会社荏原製作所 | レジスト除去システムおよびレジスト除去方法 |
| JP7265466B2 (ja) * | 2019-12-17 | 2023-04-26 | 株式会社荏原製作所 | レジスト除去システムおよびレジスト除去方法 |
| KR102303107B1 (ko) * | 2020-03-31 | 2021-09-16 | 주식회사 디엠에스 | 이산화탄소 용해모듈 및 이를 포함한 기판처리장치 |
| WO2022085414A1 (ja) * | 2020-10-23 | 2022-04-28 | 株式会社Sumco | 枚葉式ウェーハ洗浄装置の配管の洗浄方法 |
| KR102664947B1 (ko) * | 2022-01-03 | 2024-05-10 | 주식회사 하이텍환경 | 가압 선회방식이 적용된 마이크로 나노 버블 생성 장치 |
| JP2024134798A (ja) * | 2023-03-22 | 2024-10-04 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法及びその装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW452502B (en) * | 1997-12-30 | 2001-09-01 | Hirofumi Ohnari | Swirling fine-bubble generator |
| US20060054205A1 (en) * | 2002-10-01 | 2006-03-16 | Akira Yabe | Nanobubble utilization method and device |
| US20060137719A1 (en) * | 2004-12-23 | 2006-06-29 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3397154B2 (ja) * | 1997-12-30 | 2003-04-14 | 博文 大成 | 旋回式微細気泡発生装置 |
| JP2001269631A (ja) * | 2000-03-27 | 2001-10-02 | Dainippon Screen Mfg Co Ltd | 基板洗浄装置 |
| JP2006147617A (ja) * | 2004-11-16 | 2006-06-08 | Dainippon Screen Mfg Co Ltd | 基板処理装置およびパーティクル除去方法 |
| JP2006179765A (ja) * | 2004-12-24 | 2006-07-06 | Dainippon Screen Mfg Co Ltd | 基板処理装置およびパーティクル除去方法 |
-
2007
- 2007-08-31 JP JP2007226126A patent/JP5252861B2/ja active Active
-
2008
- 2008-01-11 TW TW97101146A patent/TWI415694B/zh active
- 2008-01-11 CN CN2008800019551A patent/CN101578688B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW452502B (en) * | 1997-12-30 | 2001-09-01 | Hirofumi Ohnari | Swirling fine-bubble generator |
| US20060054205A1 (en) * | 2002-10-01 | 2006-03-16 | Akira Yabe | Nanobubble utilization method and device |
| US20060137719A1 (en) * | 2004-12-23 | 2006-06-29 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101578688B (zh) | 2011-04-13 |
| CN101578688A (zh) | 2009-11-11 |
| TW200911395A (en) | 2009-03-16 |
| JP2008198974A (ja) | 2008-08-28 |
| JP5252861B2 (ja) | 2013-07-31 |
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