TWI411486B - 半導體裝置的製造方法 - Google Patents

半導體裝置的製造方法 Download PDF

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Publication number
TWI411486B
TWI411486B TW096132075A TW96132075A TWI411486B TW I411486 B TWI411486 B TW I411486B TW 096132075 A TW096132075 A TW 096132075A TW 96132075 A TW96132075 A TW 96132075A TW I411486 B TWI411486 B TW I411486B
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TW
Taiwan
Prior art keywords
layer
light
electrode layer
mask
conductive layer
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TW096132075A
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English (en)
Chinese (zh)
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TW200829359A (en
Inventor
小俣貴嗣
田中幸一郎
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半導體能源研究所股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multi-focusing
    • B23K26/0676—Dividing the beam into multiple beams, e.g. multi-focusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/386—Removing material by boring or cutting by boring of blind holes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/389—Removing material by boring or cutting by boring of fluid openings, e.g. nozzles, jets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/02—Iron or ferrous alloys
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/14—Titanium or alloys thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/18—Dissimilar materials
    • B23K2103/26—Alloys of Nickel and Cobalt and Chromium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/30—Organic materials
    • B23K2103/42—Plastics other than composite materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Laser Beam Processing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
TW096132075A 2006-08-31 2007-08-29 半導體裝置的製造方法 TWI411486B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006235522A JP5110830B2 (ja) 2006-08-31 2006-08-31 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
TW200829359A TW200829359A (en) 2008-07-16
TWI411486B true TWI411486B (zh) 2013-10-11

Family

ID=39152230

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096132075A TWI411486B (zh) 2006-08-31 2007-08-29 半導體裝置的製造方法

Country Status (4)

Country Link
US (1) US8227353B2 (https=)
JP (1) JP5110830B2 (https=)
KR (1) KR101351813B1 (https=)
TW (1) TWI411486B (https=)

Cited By (1)

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TWI618275B (zh) * 2013-12-02 2018-03-11 半導體能源研究所股份有限公司 用於從基板剝離有機樹脂層的處理裝置

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US7994021B2 (en) * 2006-07-28 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US7943287B2 (en) * 2006-07-28 2011-05-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
TWI412079B (zh) * 2006-07-28 2013-10-11 半導體能源研究所股份有限公司 製造顯示裝置的方法
US8563431B2 (en) * 2006-08-25 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8148259B2 (en) 2006-08-30 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN101719493B (zh) 2008-10-08 2014-05-14 株式会社半导体能源研究所 显示装置
TWI463708B (zh) * 2009-02-24 2014-12-01 榮創能源科技股份有限公司 側面出光型發光元件封裝結構及其製造方法
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CN105023973A (zh) * 2009-04-21 2015-11-04 泰特拉桑有限公司 形成太阳能电池中的结构的方法
US8816249B2 (en) 2009-04-28 2014-08-26 Industrial Technology Research Institute Apparatuses for fabricating patterns using laser diode
DE102009020272B4 (de) * 2009-05-07 2014-09-11 Tyco Electronics Amp Gmbh Laserschweißsystem
JP5471046B2 (ja) * 2009-06-03 2014-04-16 株式会社ブイ・テクノロジー レーザアニール方法及びレーザアニール装置
JP5448619B2 (ja) * 2009-07-21 2014-03-19 東京応化工業株式会社 サポートプレートの洗浄方法
JP5676863B2 (ja) * 2009-09-15 2015-02-25 株式会社Ｓｃｒｅｅｎホールディングス パターン形成方法およびパターン形成装置
JP4888575B2 (ja) * 2010-02-17 2012-02-29 日産自動車株式会社 乾燥装置及び乾燥方法
JP5637526B2 (ja) * 2010-04-28 2014-12-10 株式会社ブイ・テクノロジー レーザ加工装置
JP2012004250A (ja) * 2010-06-15 2012-01-05 V Technology Co Ltd 低温ポリシリコン膜の形成装置及び方法
JP5884147B2 (ja) * 2010-12-09 2016-03-15 株式会社ブイ・テクノロジー レーザアニール装置及びレーザアニール方法
PL2658674T3 (pl) * 2010-12-30 2017-08-31 3M Innovative Properties Co Przyrząd do przekształcania laserowego wykorzystujący element wsporczy z zewnętrzną warstwą ze złota; sposób przekształcania laserowego arkusza materiału przy wykorzystaniu takiego przyrządu
JP2012218049A (ja) * 2011-04-12 2012-11-12 Key Tranding Co Ltd 樹脂パネルおよび樹脂パネルの製造方法
US8692111B2 (en) * 2011-08-23 2014-04-08 Sunpower Corporation High throughput laser ablation processes and structures for forming contact holes in solar cells
KR20130023643A (ko) 2011-08-29 2013-03-08 삼성디스플레이 주식회사 유기 발광 디스플레이 패널 제조 장치와, 이를 이용한 유기 발광 디스플레이 패널의 제조 방법
CN103309165A (zh) * 2012-03-09 2013-09-18 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
KR102108939B1 (ko) * 2012-04-18 2020-05-12 어플라이드 머티어리얼스, 인코포레이티드 발전된 어닐링 프로세스에서 입자를 감소시키기 위한 장치 및 방법
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KR102000591B1 (ko) * 2013-06-21 2019-07-16 엘지디스플레이 주식회사 유기전계 발광소자 및 그 제조방법
TWI532560B (zh) * 2015-01-09 2016-05-11 位元奈米科技股份有限公司 透明導電板的雷射蝕刻方法及其所製成的透明導電板
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KR102486037B1 (ko) * 2017-05-17 2023-01-06 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자, 발광 소자 패키지 및 이를 포함하는 발광 장치
JP6616368B2 (ja) * 2017-09-14 2019-12-04 ファナック株式会社 レーザ加工前に光学系の汚染レベルに応じて加工条件を補正するレーザ加工装置
US10695875B2 (en) * 2018-03-19 2020-06-30 Asia Vital Components Co., Ltd. Soldering method of soldering jig
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BR112023003143A2 (pt) * 2020-08-21 2023-04-04 Araujo Dayrell Ivan Padrão de filtragem para feixes de laser adequados para a produção de supercapacitores
CN113664391B (zh) * 2021-09-03 2024-06-07 上海百琪迈科技(集团)有限公司 一种高效薄质材料组合式激光快速切割设备
JP7692797B2 (ja) * 2021-10-29 2025-06-16 株式会社オーク製作所 照明光学系及びレーザ加工装置
JP7534722B2 (ja) * 2022-09-27 2024-08-15 日新イオン機器株式会社 イオンビーム照射装置およびイオンビーム照射方法
CN116300335B (zh) * 2023-02-28 2025-10-10 中国电子科技集团公司第十三研究所 一种电子束光阑和束闸一体化装置和电子光学系统
CN116222433B (zh) * 2023-03-22 2023-09-05 西安知象光电科技有限公司 一种基于超表面的结构光三维成像系统及方法
TWI863775B (zh) * 2023-12-26 2024-11-21 前源科技股份有限公司 電子元件的接合方法與巨量轉移電子元件的方法
KR102840733B1 (ko) * 2024-07-17 2025-08-01 위아코퍼레이션 주식회사 레이저를 이용한 마이크로 부품의 재배치 방법 및 장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4842677A (en) * 1988-02-05 1989-06-27 General Electric Company Excimer laser patterning of a novel resist using masked and maskless process steps
US5018164A (en) * 1989-09-12 1991-05-21 Hughes Aircraft Company Excimer laser ablation method and apparatus for microcircuit fabrication
US20010036755A1 (en) * 2000-04-28 2001-11-01 Koichiro Tanaka Method of fabricating semiconductor device
US6399258B2 (en) * 1999-01-14 2002-06-04 3M Innovative Properties Company Method for patterning thin films
TW200516330A (en) * 2003-11-14 2005-05-16 Semiconductor Energy Lab Co Ltd Light-emitting device and method for manufacturing the same
US20060144828A1 (en) * 2002-12-06 2006-07-06 Kenshi Fukumitsu Device and method for laser processing

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4594471A (en) * 1983-07-13 1986-06-10 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JPS6037283A (ja) 1983-08-08 1985-02-26 Semiconductor Energy Lab Co Ltd レ−ザ加工方法
US4713518A (en) * 1984-06-08 1987-12-15 Semiconductor Energy Laboratory Co., Ltd. Electronic device manufacturing methods
AU583423B2 (en) * 1985-09-21 1989-04-27 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device free from the electrical shortage through a semiconductor layer and method for manufacturing same
KR900006772B1 (ko) * 1985-11-06 1990-09-21 세미콘닥터 에너지 라보라토리 컴파니 리미티드 반도체층을 통한 전기적 단락이 없는 반도체 장치와 그 제조방법
JPH0820638B2 (ja) * 1986-08-08 1996-03-04 株式会社半導体エネルギ−研究所 液晶装置およびその作製方法
US6149988A (en) * 1986-09-26 2000-11-21 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
JPS6384789A (ja) * 1986-09-26 1988-04-15 Semiconductor Energy Lab Co Ltd 光加工方法
US5708252A (en) * 1986-09-26 1998-01-13 Semiconductor Energy Laboratory Co., Ltd. Excimer laser scanning system
US6261856B1 (en) * 1987-09-16 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US4937129A (en) * 1988-01-06 1990-06-26 Semiconductor Energy Laboratory Co., Ltd. Thin film pattern structure formed on a glass substrate
US5187601A (en) * 1988-03-07 1993-02-16 Semiconductor Energy Laboratory Co., Ltd. Method for making a high contrast liquid crystal display including laser scribing opaque and transparent conductive strips simultaneously
JP3071851B2 (ja) * 1991-03-25 2000-07-31 株式会社半導体エネルギー研究所 電気光学装置
US5828496A (en) * 1993-12-22 1998-10-27 Canon Kabushiki Kaisha Illumination optical system
JP3406946B2 (ja) * 1993-12-22 2003-05-19 キヤノン株式会社 照明光学系およびこれを用いた光学装置ならびにその光学装置を用いたデバイス製造方法
US5480097A (en) * 1994-03-25 1996-01-02 General Electric Company Gas atomizer with reduced backflow
US5866444A (en) * 1995-03-21 1999-02-02 Semiconductor Energy Laboratory Co. Integrated circuit and method of fabricating the same
JP3391717B2 (ja) * 1997-12-24 2003-03-31 シャープ株式会社 反射型液晶表示装置
JP3236266B2 (ja) 1998-10-27 2001-12-10 鹿児島日本電気株式会社 パターン形成方法
JP2001079678A (ja) * 1999-09-13 2001-03-27 Sumitomo Heavy Ind Ltd レーザ穴あけ加工方法及び加工装置
TW516244B (en) * 1999-09-17 2003-01-01 Semiconductor Energy Lab EL display device and method for manufacturing the same
US6641933B1 (en) * 1999-09-24 2003-11-04 Semiconductor Energy Laboratory Co., Ltd. Light-emitting EL display device
US6384427B1 (en) * 1999-10-29 2002-05-07 Semiconductor Energy Laboratory Co., Ltd. Electronic device
US7112115B1 (en) * 1999-11-09 2006-09-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
JP3810629B2 (ja) 2000-11-24 2006-08-16 シャープ株式会社 半導体装置およびその半導体装置の製造方法
JP2003115650A (ja) * 2001-10-03 2003-04-18 Yazaki Corp 回路体の製造方法および製造装置
JP4006994B2 (ja) * 2001-12-18 2007-11-14 株式会社リコー 立体構造体の加工方法、立体形状品の製造方法及び立体構造体
TWI258317B (en) * 2002-01-25 2006-07-11 Semiconductor Energy Lab A display device and method for manufacturing thereof
JP4610867B2 (ja) * 2002-06-14 2011-01-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6984573B2 (en) * 2002-06-14 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and apparatus
JP4245329B2 (ja) * 2002-10-31 2009-03-25 大日本印刷株式会社 機能性素子の製造方法
CN100459060C (zh) * 2003-02-05 2009-02-04 株式会社半导体能源研究所 显示装置的制造方法
CN100380596C (zh) * 2003-04-25 2008-04-09 株式会社半导体能源研究所 液滴排出装置、图案的形成方法及半导体装置的制造方法
CN100467141C (zh) * 2003-04-25 2009-03-11 株式会社半导体能源研究所 图形的制作方法和液滴排出装置
US7202155B2 (en) * 2003-08-15 2007-04-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing wiring and method for manufacturing semiconductor device
JP4407202B2 (ja) * 2003-08-22 2010-02-03 パナソニック株式会社 加工装置及び加工方法とこれを用いた生産設備
EP1542272B1 (en) * 2003-10-06 2016-07-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US7226819B2 (en) * 2003-10-28 2007-06-05 Semiconductor Energy Laboratory Co., Ltd. Methods for forming wiring and manufacturing thin film transistor and droplet discharging method
US8101467B2 (en) * 2003-10-28 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same, and liquid crystal television receiver
CN1890698B (zh) * 2003-12-02 2011-07-13 株式会社半导体能源研究所 显示器件及其制造方法和电视装置
JP5093985B2 (ja) * 2004-01-16 2012-12-12 株式会社半導体エネルギー研究所 膜パターンの形成方法
US7651932B2 (en) * 2005-05-31 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing antenna and method for manufacturing semiconductor device
TWI427682B (zh) * 2006-07-04 2014-02-21 半導體能源研究所股份有限公司 顯示裝置的製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4842677A (en) * 1988-02-05 1989-06-27 General Electric Company Excimer laser patterning of a novel resist using masked and maskless process steps
US5018164A (en) * 1989-09-12 1991-05-21 Hughes Aircraft Company Excimer laser ablation method and apparatus for microcircuit fabrication
US6399258B2 (en) * 1999-01-14 2002-06-04 3M Innovative Properties Company Method for patterning thin films
US20010036755A1 (en) * 2000-04-28 2001-11-01 Koichiro Tanaka Method of fabricating semiconductor device
US20060144828A1 (en) * 2002-12-06 2006-07-06 Kenshi Fukumitsu Device and method for laser processing
TW200516330A (en) * 2003-11-14 2005-05-16 Semiconductor Energy Lab Co Ltd Light-emitting device and method for manufacturing the same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI618275B (zh) * 2013-12-02 2018-03-11 半導體能源研究所股份有限公司 用於從基板剝離有機樹脂層的處理裝置
US10312315B2 (en) 2013-12-02 2019-06-04 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US10355067B2 (en) 2013-12-02 2019-07-16 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US10763322B2 (en) 2013-12-02 2020-09-01 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US10854697B2 (en) 2013-12-02 2020-12-01 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US10872947B2 (en) 2013-12-02 2020-12-22 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US10879331B2 (en) 2013-12-02 2020-12-29 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US11004925B2 (en) 2013-12-02 2021-05-11 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US11672148B2 (en) 2013-12-02 2023-06-06 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US12048207B2 (en) 2013-12-02 2024-07-23 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same

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