TWI409850B - A control device for a substrate processing apparatus, and a control method thereof - Google Patents

A control device for a substrate processing apparatus, and a control method thereof Download PDF

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Publication number
TWI409850B
TWI409850B TW096110861A TW96110861A TWI409850B TW I409850 B TWI409850 B TW I409850B TW 096110861 A TW096110861 A TW 096110861A TW 96110861 A TW96110861 A TW 96110861A TW I409850 B TWI409850 B TW I409850B
Authority
TW
Taiwan
Prior art keywords
processing
batch
substrate
temperature
virtual
Prior art date
Application number
TW096110861A
Other languages
English (en)
Chinese (zh)
Other versions
TW200746244A (en
Inventor
橫內健
八木文子
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW200746244A publication Critical patent/TW200746244A/zh
Application granted granted Critical
Publication of TWI409850B publication Critical patent/TWI409850B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring

Landscapes

  • Drying Of Semiconductors (AREA)
TW096110861A 2006-03-29 2007-03-28 A control device for a substrate processing apparatus, and a control method thereof TWI409850B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006091102A JP5128080B2 (ja) 2006-03-29 2006-03-29 基板処理装置の制御装置およびその制御方法

Publications (2)

Publication Number Publication Date
TW200746244A TW200746244A (en) 2007-12-16
TWI409850B true TWI409850B (zh) 2013-09-21

Family

ID=38639090

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096110861A TWI409850B (zh) 2006-03-29 2007-03-28 A control device for a substrate processing apparatus, and a control method thereof

Country Status (4)

Country Link
JP (1) JP5128080B2 (https=)
KR (1) KR100882221B1 (https=)
CN (1) CN101046691B (https=)
TW (1) TWI409850B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008288282A (ja) * 2007-05-15 2008-11-27 Hitachi Kokusai Electric Inc 基板処理装置
JP5463066B2 (ja) 2009-04-30 2014-04-09 東京エレクトロン株式会社 ロット処理開始判定方法及び制御装置
TWI524388B (zh) * 2013-12-27 2016-03-01 日立國際電氣股份有限公司 A substrate processing apparatus, a manufacturing method of a semiconductor device, and a recording medium
JP6501601B2 (ja) 2014-05-20 2019-04-17 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理プログラム
US12074044B2 (en) * 2018-11-14 2024-08-27 Cyberoptics Corporation Wafer-like sensor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5925212A (en) * 1995-09-05 1999-07-20 Applied Materials, Inc. Apparatus and method for attaining repeatable temperature versus time profiles for plasma heated interactive parts used in mass production plasma processing
US20050233477A1 (en) * 2004-03-05 2005-10-20 Tokyo Electron Limited Substrate processing apparatus, substrate processing method, and program for implementing the method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2511288B2 (ja) * 1988-03-14 1996-06-26 富士通株式会社 半導体装置の熱処理方法
JP3568749B2 (ja) 1996-12-17 2004-09-22 株式会社デンソー 半導体のドライエッチング方法
KR19980068383A (ko) * 1997-02-19 1998-10-15 김광호 더미 로트 플로우 제어방법
JPH11288990A (ja) * 1998-04-01 1999-10-19 Hitachi Ltd プロセス処理方法およびその装置並びに半導体製造ラインおよびそれにおける被処理基板の搬送方法
JP3660582B2 (ja) * 2000-12-04 2005-06-15 株式会社日立製作所 プラズマエッチング処理装置
JP4334817B2 (ja) * 2002-05-15 2009-09-30 東京エレクトロン株式会社 基板処理装置及び基板処理方法
KR100476931B1 (ko) * 2002-09-19 2005-03-16 삼성전자주식회사 시즈닝 레서피의 최적화 방법
JP4673548B2 (ja) * 2003-11-12 2011-04-20 東京エレクトロン株式会社 基板処理装置及びその制御方法
CN100373545C (zh) * 2004-03-05 2008-03-05 东京毅力科创株式会社 基板处理装置、基板处理方法及程序

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5925212A (en) * 1995-09-05 1999-07-20 Applied Materials, Inc. Apparatus and method for attaining repeatable temperature versus time profiles for plasma heated interactive parts used in mass production plasma processing
US20050233477A1 (en) * 2004-03-05 2005-10-20 Tokyo Electron Limited Substrate processing apparatus, substrate processing method, and program for implementing the method

Also Published As

Publication number Publication date
KR20070098685A (ko) 2007-10-05
CN101046691A (zh) 2007-10-03
CN101046691B (zh) 2010-09-29
JP5128080B2 (ja) 2013-01-23
KR100882221B1 (ko) 2009-02-06
TW200746244A (en) 2007-12-16
JP2007266410A (ja) 2007-10-11

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