JP5128080B2 - 基板処理装置の制御装置およびその制御方法 - Google Patents

基板処理装置の制御装置およびその制御方法 Download PDF

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Publication number
JP5128080B2
JP5128080B2 JP2006091102A JP2006091102A JP5128080B2 JP 5128080 B2 JP5128080 B2 JP 5128080B2 JP 2006091102 A JP2006091102 A JP 2006091102A JP 2006091102 A JP2006091102 A JP 2006091102A JP 5128080 B2 JP5128080 B2 JP 5128080B2
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Japan
Prior art keywords
processing
substrate
lot
temperature
dummy
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Expired - Lifetime
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JP2006091102A
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English (en)
Japanese (ja)
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JP2007266410A5 (https=
JP2007266410A (ja
Inventor
健 横内
文子 八木
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2006091102A priority Critical patent/JP5128080B2/ja
Priority to TW096110861A priority patent/TWI409850B/zh
Priority to US11/692,426 priority patent/US20070227658A1/en
Priority to CN2007100913221A priority patent/CN101046691B/zh
Priority to KR1020070031063A priority patent/KR100882221B1/ko
Publication of JP2007266410A publication Critical patent/JP2007266410A/ja
Publication of JP2007266410A5 publication Critical patent/JP2007266410A5/ja
Priority to US12/958,997 priority patent/US20110190924A1/en
Application granted granted Critical
Publication of JP5128080B2 publication Critical patent/JP5128080B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring

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  • Drying Of Semiconductors (AREA)
JP2006091102A 2006-03-29 2006-03-29 基板処理装置の制御装置およびその制御方法 Expired - Lifetime JP5128080B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2006091102A JP5128080B2 (ja) 2006-03-29 2006-03-29 基板処理装置の制御装置およびその制御方法
US11/692,426 US20070227658A1 (en) 2006-03-29 2007-03-28 Control device for controlling substrate processing apparatus and method therefor
TW096110861A TWI409850B (zh) 2006-03-29 2007-03-28 A control device for a substrate processing apparatus, and a control method thereof
KR1020070031063A KR100882221B1 (ko) 2006-03-29 2007-03-29 기판 처리 장치의 제어 장치, 기판 처리 장치의 제어 방법및 기판 처리 장치의 제어 프로그램을 기억한 기록 매체
CN2007100913221A CN101046691B (zh) 2006-03-29 2007-03-29 基板处理装置的控制装置、方法
US12/958,997 US20110190924A1 (en) 2006-03-29 2010-12-02 Control device for controlling substrate processing apparatus and method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006091102A JP5128080B2 (ja) 2006-03-29 2006-03-29 基板処理装置の制御装置およびその制御方法

Publications (3)

Publication Number Publication Date
JP2007266410A JP2007266410A (ja) 2007-10-11
JP2007266410A5 JP2007266410A5 (https=) 2009-03-26
JP5128080B2 true JP5128080B2 (ja) 2013-01-23

Family

ID=38639090

Family Applications (1)

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JP2006091102A Expired - Lifetime JP5128080B2 (ja) 2006-03-29 2006-03-29 基板処理装置の制御装置およびその制御方法

Country Status (4)

Country Link
JP (1) JP5128080B2 (https=)
KR (1) KR100882221B1 (https=)
CN (1) CN101046691B (https=)
TW (1) TWI409850B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008288282A (ja) * 2007-05-15 2008-11-27 Hitachi Kokusai Electric Inc 基板処理装置
JP5463066B2 (ja) 2009-04-30 2014-04-09 東京エレクトロン株式会社 ロット処理開始判定方法及び制御装置
TWI524388B (zh) * 2013-12-27 2016-03-01 日立國際電氣股份有限公司 A substrate processing apparatus, a manufacturing method of a semiconductor device, and a recording medium
JP6501601B2 (ja) 2014-05-20 2019-04-17 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理プログラム
US12074044B2 (en) * 2018-11-14 2024-08-27 Cyberoptics Corporation Wafer-like sensor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2511288B2 (ja) * 1988-03-14 1996-06-26 富士通株式会社 半導体装置の熱処理方法
US5925212A (en) * 1995-09-05 1999-07-20 Applied Materials, Inc. Apparatus and method for attaining repeatable temperature versus time profiles for plasma heated interactive parts used in mass production plasma processing
JP3568749B2 (ja) 1996-12-17 2004-09-22 株式会社デンソー 半導体のドライエッチング方法
KR19980068383A (ko) * 1997-02-19 1998-10-15 김광호 더미 로트 플로우 제어방법
JPH11288990A (ja) * 1998-04-01 1999-10-19 Hitachi Ltd プロセス処理方法およびその装置並びに半導体製造ラインおよびそれにおける被処理基板の搬送方法
JP3660582B2 (ja) * 2000-12-04 2005-06-15 株式会社日立製作所 プラズマエッチング処理装置
JP4334817B2 (ja) * 2002-05-15 2009-09-30 東京エレクトロン株式会社 基板処理装置及び基板処理方法
KR100476931B1 (ko) * 2002-09-19 2005-03-16 삼성전자주식회사 시즈닝 레서피의 최적화 방법
JP4673548B2 (ja) * 2003-11-12 2011-04-20 東京エレクトロン株式会社 基板処理装置及びその制御方法
US20050233477A1 (en) * 2004-03-05 2005-10-20 Tokyo Electron Limited Substrate processing apparatus, substrate processing method, and program for implementing the method
CN100373545C (zh) * 2004-03-05 2008-03-05 东京毅力科创株式会社 基板处理装置、基板处理方法及程序

Also Published As

Publication number Publication date
KR20070098685A (ko) 2007-10-05
CN101046691A (zh) 2007-10-03
TWI409850B (zh) 2013-09-21
CN101046691B (zh) 2010-09-29
KR100882221B1 (ko) 2009-02-06
TW200746244A (en) 2007-12-16
JP2007266410A (ja) 2007-10-11

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