CN101046691B - 基板处理装置的控制装置、方法 - Google Patents

基板处理装置的控制装置、方法 Download PDF

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Publication number
CN101046691B
CN101046691B CN2007100913221A CN200710091322A CN101046691B CN 101046691 B CN101046691 B CN 101046691B CN 2007100913221 A CN2007100913221 A CN 2007100913221A CN 200710091322 A CN200710091322 A CN 200710091322A CN 101046691 B CN101046691 B CN 101046691B
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processing
batch
substrate
temperature
batches
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CN2007100913221A
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Chinese (zh)
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CN101046691A (zh
Inventor
横内健
八木文子
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring

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  • Drying Of Semiconductors (AREA)
CN2007100913221A 2006-03-29 2007-03-29 基板处理装置的控制装置、方法 Active CN101046691B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006091102 2006-03-29
JP2006091102A JP5128080B2 (ja) 2006-03-29 2006-03-29 基板処理装置の制御装置およびその制御方法
JP2006-091102 2006-03-29

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CN101046691A CN101046691A (zh) 2007-10-03
CN101046691B true CN101046691B (zh) 2010-09-29

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CN2007100913221A Active CN101046691B (zh) 2006-03-29 2007-03-29 基板处理装置的控制装置、方法

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JP (1) JP5128080B2 (https=)
KR (1) KR100882221B1 (https=)
CN (1) CN101046691B (https=)
TW (1) TWI409850B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008288282A (ja) * 2007-05-15 2008-11-27 Hitachi Kokusai Electric Inc 基板処理装置
JP5463066B2 (ja) 2009-04-30 2014-04-09 東京エレクトロン株式会社 ロット処理開始判定方法及び制御装置
TWI524388B (zh) * 2013-12-27 2016-03-01 日立國際電氣股份有限公司 A substrate processing apparatus, a manufacturing method of a semiconductor device, and a recording medium
JP6501601B2 (ja) 2014-05-20 2019-04-17 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理プログラム
US12074044B2 (en) * 2018-11-14 2024-08-27 Cyberoptics Corporation Wafer-like sensor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1617297A (zh) * 2003-11-12 2005-05-18 东京毅力科创株式会社 基板处理装置及其控制方法
CN1653606A (zh) * 2002-05-15 2005-08-10 东京毅力科创株式会社 基板处理装置和基板处理方法
CN1664987A (zh) * 2004-03-05 2005-09-07 东京毅力科创株式会社 基板处理装置、基板处理方法及程序

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2511288B2 (ja) * 1988-03-14 1996-06-26 富士通株式会社 半導体装置の熱処理方法
US5925212A (en) * 1995-09-05 1999-07-20 Applied Materials, Inc. Apparatus and method for attaining repeatable temperature versus time profiles for plasma heated interactive parts used in mass production plasma processing
JP3568749B2 (ja) 1996-12-17 2004-09-22 株式会社デンソー 半導体のドライエッチング方法
KR19980068383A (ko) * 1997-02-19 1998-10-15 김광호 더미 로트 플로우 제어방법
JPH11288990A (ja) * 1998-04-01 1999-10-19 Hitachi Ltd プロセス処理方法およびその装置並びに半導体製造ラインおよびそれにおける被処理基板の搬送方法
JP3660582B2 (ja) * 2000-12-04 2005-06-15 株式会社日立製作所 プラズマエッチング処理装置
KR100476931B1 (ko) * 2002-09-19 2005-03-16 삼성전자주식회사 시즈닝 레서피의 최적화 방법
US20050233477A1 (en) * 2004-03-05 2005-10-20 Tokyo Electron Limited Substrate processing apparatus, substrate processing method, and program for implementing the method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1653606A (zh) * 2002-05-15 2005-08-10 东京毅力科创株式会社 基板处理装置和基板处理方法
CN1617297A (zh) * 2003-11-12 2005-05-18 东京毅力科创株式会社 基板处理装置及其控制方法
CN1664987A (zh) * 2004-03-05 2005-09-07 东京毅力科创株式会社 基板处理装置、基板处理方法及程序

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JP特开2000-150608A 2000.05.30
JP特开2005-109098A 2005.04.21
JP特开平10-233387A 1998.09.02

Also Published As

Publication number Publication date
KR20070098685A (ko) 2007-10-05
CN101046691A (zh) 2007-10-03
TWI409850B (zh) 2013-09-21
JP5128080B2 (ja) 2013-01-23
KR100882221B1 (ko) 2009-02-06
TW200746244A (en) 2007-12-16
JP2007266410A (ja) 2007-10-11

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