CN101046691B - Control device and method for substrate processing apparatus - Google Patents
Control device and method for substrate processing apparatus Download PDFInfo
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- CN101046691B CN101046691B CN2007100913221A CN200710091322A CN101046691B CN 101046691 B CN101046691 B CN 101046691B CN 2007100913221 A CN2007100913221 A CN 2007100913221A CN 200710091322 A CN200710091322 A CN 200710091322A CN 101046691 B CN101046691 B CN 101046691B
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- 239000000758 substrate Substances 0.000 title claims abstract description 203
- 238000012545 processing Methods 0.000 title claims abstract description 156
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- Drying Of Semiconductors (AREA)
Abstract
To provide a control device of a substrate processing device for determining an execution of a dummy process for adjusting the state in a processing vessel on the basis of conditions about temperature. An EC200 comprises a substrate process executing part 280 for executing an etching of a product substrate (a wafer W), a dummy process executing part 275 for executing the dummy process to the dummy substrate, and a determining part 270 for determining the execution of the dummy process on the basis of the condition about temperature. The part 270 acquires information about temperature for adjusting an atmosphere in the processing vessel of each PM provided in a PM400, and determines the adjustment of the temperature condition in the processing vessel on the basis of the acquired temperature information. When the temperature state in the processing vessel is determined as adjusted by the part 270, the part 280 does not make the part 275 to execute, but immediately controls to execute the etching process to the product substrate.
Description
Technical field
The present invention relates to control to the product substrate implement predetermined processing substrate board treatment control device, control method and store the recording medium of its control program.Particularly relate to judgement in order to adjust state in the container handling and whether implement control device, the control method of simulation process and store the recording medium of its control program.
Background technology
Usually, in substrate board treatment, carry out processing substrate such as CVD (chemical vapor deposition) processing, etch processes, ashing treatment based on defined order in the predetermined scheme.Wherein, in CVD handled, when forming film on a plurality of substrates, film also can be deposited on the inwall of container handling at leisure.And in etch processes, when removal was formed on film on the substrate, resultant of reaction can be attached on the inwall of container handling by plasma decomposes.These impurity can thus, can cause the mis-behave of the product after the processing because heating repeatedly and cool off and peel off or come off from the inwall of container handling in the container handling fallen on the substrate as particle, and this situation does not wish to obtain.
Here, for fear of the problem of above-mentioned particle, in the prior art, have carrying out regular cleaning in the container handling, and after the cleaning operation, carry out the technology (for example, with reference to patent documentation 1) of ageing (seasoning) in order automatically to adjust atmosphere in the container handling.In this ageing (seasoning) operation, based on order represented in the predetermined scheme, non-product substrate is implemented simulation process, adjust the state of substrate board treatment thus.
Patent documentation 1: Japanese kokai publication hei 10-233387 communique
Yet, under the in stable condition situation in container handling, think to there is no need to carry out simulation process.And, can also think this moment to there is no need to consider pressure equitemperature state in addition.Its reason will be in the following describes.In other words, in treatment conditions, the response of temperature is the poorest.For example, make the design temperature of the well heater that is arranged in the substrate board treatment etc. consistent with treatment conditions even change, response with it, the temperature stabilization in container handling with the corresponding to temperature of treatment conditions, also need considerable time.
Therefore, under the situation of the state labile in container handling, before the processing of product substrate, must at first temperature be changed to and the corresponding to value of treatment conditions, must wait for that the actual temperature in the container handling changes to design temperature lentamente.Like this, under the unadjusted situation of the state in container handling, must be from the bad of its response and control temperature conditions in advance.Consider that from this viewpoint under the unstabilized situation of the state in container handling, the simulation process of implementing in order in advance the state in the container handling (particularly state of temperature) to be adjusted just has very big meaning.
In contrast to this, the treatment conditions beyond pressure and the input power equitemperature, its response is just better.For example, though with the air capacity of the flow of gas, gas, and delivery change to and the corresponding to value of treatment conditions, the state in the container handling also can more immediately reach desired value.Therefore, before processing substrate, carry out simulation process in advance in order to adjust the treatment conditions beyond the temperature, the waste of resources such as the energy of being not only in this processing to be spent and material, if implement unwanted simulation process, then can not produce product therebetween, so there is the problem that productive capacity descends, the productivity of product descends.
Summary of the invention
In order to eliminate the problems referred to above, in the present invention, provide condition based on relevant temperature, take a decision as to whether the state of adjusting in the container handling, and implemented control device, its control method and the control program thereof of the substrate board treatment of simulation process.
In other words, in order to address the above problem, according to a viewpoint of the present invention, a kind of control device of control basal plate treating apparatus is provided, and is to implement the control device that the processing substrate enforcement portion of predetermined process controls substrate board treatment with the simulation process enforcement portion that non-product substrate is implemented simulation process by being provided with for the product substrate.This control device comprises detection unit, and this detection unit is obtained the information of the temperature of using about the atmosphere of adjusting in the container handling that is provided with in the aforesaid substrate treating apparatus, judges based on obtained temperature information whether the state of temperature in the above-mentioned container handling is adjusted.Under the controlled situation of having judged by above-mentioned detection unit in the above-mentioned container handling of state of temperature, in above-mentioned simulation process enforcement portion, do not implement above-mentioned simulation process, aforesaid substrate is handled enforcement portion and is implemented predetermined process for the product substrate.
Under situation, must the atmosphere in the container handling be adjusted into and the corresponding to state of treatment conditions in advance predetermined process such as product substrate enforcement etch processes.Particularly for temperature, as mentioned above, actual temperature in the container handling is moved reach desired value, need considerable time, so the simulation process of implementing in order in advance the state of temperature in the container handling to be adjusted just has very big meaning.
But, the treatment conditions beyond pressure or the input power equitemperature, its response is just better.For example, when desire changed to air capacity, the delivery of the flow of gas and gas with the corresponding to value of treatment conditions, the state in the container handling can reach desired value more instantaneously.Like this, spending many expense and time in order to adjust the treatment conditions beyond the temperature in the container handling in advance carries out simulation process, is very non-remunerative.
Therefore,, under the controlled situation of state of temperature of judging above-mentioned container handling, do not implement above-mentioned simulation process, implement predetermined process such as etch processes for the product substrate according to the present invention.The waste of resources such as the gas that consumes in the time of thus, can suppressing to implement simulation process and electric power equal energy source and material.And then, can in the production of product, use effectively and implement the time that simulation process spent.Its result when saving the energy, can also improve ratio defective product, and the productivity leap of product is risen.
And then, can also comprise employed one or more the storage part of scheme in the processing of storage products substrate, the design temperature of the scheme of using in the processing of above-mentioned detection unit with last product substrate in the scheme of storing in the above-mentioned storage part, compare with the design temperature of the scheme of using in the processing of product substrate subsequently, as first decision condition, judge thus whether the state of temperature of above-mentioned container handling is adjusted.
And, above-mentioned detection unit also can be on the basis of above-mentioned first condition, will from before the processing of product substrate the value that calculated of the setting electric power of the scheme used, compare with the setting electric power of the scheme of using in the processing of product substrate subsequently, as second decision condition, judge thus whether the state of temperature of above-mentioned container handling is adjusted.Here, so-called from before the processing of product substrate the value that calculated of the setting electric power of the scheme used, can be the mean value that the employed a plurality of schemes of a plurality of substrates of batch that belong to last processing are set electric power, also can be the setting electric power of the employed scheme of substrate handled recently.
The aforesaid substrate treating apparatus comprises the temperature sensor that detects the temperature in the above-mentioned container handling, above-mentioned detection unit also can be obtained the temperature in the container handling that is detected by the said temperature sensor, the design temperature of the scheme of using in the processing with the temperature in the container of obtaining and product substrate subsequently compares, as the 3rd decision condition, judge thus whether the state of temperature of above-mentioned container handling is adjusted.
Thus, by the difference of actual temperature in the container handling and scheme design temperature, whether the state of temperature of determination processing container is adjusted.By like this scheme design temperature that uses in the temperature of reality and the operation subsequently being compared, can coming reliably according to the virtual condition of container handling, whether the state of temperature of determination processing container be adjusted.Its result can judge whether be necessary to carry out simulation process more reliably.
In addition, as the temperature in the container handling of sensor, near the temperature the upper electrode preferably, but, for example also can be the temperature of the mounting table of near the temperature of lower electrode, mounting substrate, the temperature of container handling sidewall, the design temperature of well heater etc., so long as the value of state of temperature in the expression container handling, and so on detected value can.
Moreover, also comprising the continuous instruction unit that drops into of batch, its indication continuous input in batches makes after first batch that is made of the product substrate in batch that comprises the product substrate in the processing, handles second batch that is made of the other products substrate in batch continuously.Above-mentioned detection unit has only been indicated under the situation about dropping into continuously in batches being dropped into instruction unit continuously by above-mentioned batch, judges based on second decision condition or the condition that comprises second decision condition.
Moreover, also comprise discontinuous input instruction unit in batches, its indication discontinuous input in batches, make under the state that does not have the batch that is constituted by the product substrate in batch that comprises the product substrate in the processing, discontinuous enforcement is for the processing of a batch, above-mentioned simulation process enforcement portion, by above-mentioned batch discontinuous input instruction unit indicated under the situation of discontinuous input in batches, in above-mentioned detection unit, do not implement above-mentioned judgement, before the product substrate of the batch of above-mentioned discontinuous input is implemented the processing of afore mentioned rules, non-product substrate is implemented simulation process.
Under the situation of discontinuous enforcement batch processing, begin constantly can think and pass through the long time till the processing constantly of the batch that will handle subsequently from the processing of the batch (product substrate) of last processing.For example, after the maintenance of substrate board treatment, drop into a class situation of (wafer) in batches.Under these circumstances, the collapse of the state in the container handling, instability.Therefore, the necessary state of adjusting in the container handling before the treatment product substrate.Particularly, by above-mentioned reason, must control temperature conditions in advance.
Here, in the present invention, under the situation of having indicated discontinuous input in batches, need not to wait for the judgement of detection unit, before the product substrate being implemented etch processes etc., unconditionally non-product substrate is implemented simulation process.Thus, even the discontinuous input of the very high batch of the possibility of the condition in container handling collapse by the enforcement of simulation process, also can be adjusted the condition in the container handling that comprises state of temperature reliably.Its result can implement the processing for the product substrate accurately.
Above-mentioned detection unit also can be corresponding to the parameter of the utilization condition of representing specified simulation process, according to the decision condition of any one at least in above-mentioned first decision condition, above-mentioned second decision condition and above-mentioned the 3rd decision condition, judge whether the state of temperature of above-mentioned container handling is adjusted.
At this moment, above-mentioned detection unit is dropped into instruction unit indication continuous input in batches continuously by above-mentioned batch, under the situation of the continuous input of above-mentioned parameter given batch size, judge by above-mentioned the 3rd decision condition whether the state of temperature of above-mentioned container handling is adjusted as the utilization condition of simulation process.
And, above-mentioned detection unit is dropped into instruction unit indication continuous input in batches continuously by above-mentioned batch, do not have to judge by above-mentioned first and second decision condition whether the state of temperature of above-mentioned container handling is adjusted under the situation of the continuous input of given batch size as the utilization condition of simulation process by above-mentioned parameter.
Perhaps, above-mentioned detection unit is dropped into instruction unit indication continuous input in batches continuously by above-mentioned batch, do not have to judge by above-mentioned first, second and third decision condition whether the state of temperature of above-mentioned container handling is adjusted under the situation of the continuous input of given batch size as the utilization condition of simulation process by above-mentioned parameter.
Above-mentioned simulation process enforcement portion is by the discontinuous input instruction unit indication of above-mentioned batch discontinuous input in batches, under the situation of the continuous input of above-mentioned parameter given batch size as the utilization condition of simulation process, in above-mentioned detection unit, do not implement above-mentioned judgement, before the product substrate of the batch of above-mentioned discontinuous input is implemented the processing of afore mentioned rules, non-product substrate is implemented simulation process.
Thus, under the situation of the processing of the discontinuous input of parameter given batch size, unconditionally implement simulation process.Consequently, can before the processing of carrying out the product substrate, reliably the atmosphere in the container handling be adjusted into steady state (SS).
Above-mentioned simulation process enforcement portion is by the discontinuous input instruction unit indication of above-mentioned batch discontinuous input in batches, under the situation of the continuous input of above-mentioned parameter given batch size, judge by the above-mentioned first and the 3rd decision condition whether the state of temperature of above-mentioned container handling is adjusted as the utilization condition of simulation process.
And, in order to address the above problem, according to another viewpoint of the present invention, a kind of control method of substrate board treatment is provided, it is the substrate board treatment of predetermined processing is implemented in control to the product substrate control method, obtain the information of the temperature of using about the atmosphere of adjusting in the above-mentioned container handling, judge based on obtained temperature information whether the state of temperature in the above-mentioned container handling is adjusted, under the controlled situation of state of temperature in having judged above-mentioned container handling, non-product substrate is not implemented above-mentioned simulation process, and implement the processing of afore mentioned rules for the product substrate.
And, in order to address the above problem, according to another viewpoint of the present invention, a kind of recording medium of embodied on computer readable is provided, store control and the product substrate is implemented the control program of the substrate board treatment of predetermined processing, it is characterized in that: above-mentioned control program moves following processing in computing machine, obtain the information processing of the temperature of using about the atmosphere of adjusting in the above-mentioned container handling, judge whether controlled processing of state of temperature in the above-mentioned container handling based on obtained temperature information, and under the controlled situation of the state of temperature in having judged above-mentioned container handling, non-product substrate is not implemented above-mentioned simulation process, and implement the processing that afore mentioned rules is handled for the product substrate.
Thus, under the controlled situation of the state of temperature in having judged above-mentioned container handling, do not implement above-mentioned simulation process, and implement predetermined process for the product substrate.The waste of resources such as the energy that consumes in the time of thus, can suppressing to implement simulation process or material.And then, the time that can in the processing of product substrate, use in the simulation process effectively to be spent.Its result when saving the energy, can also boost productivity, and the productivity leap is risen.
By above explanation, according to the present invention, based on the condition criterion of relevant temperature under the controlled situation of the state of temperature in the container handling, can omit simulation process, the product substrate is implemented predetermined process.
Description of drawings
Fig. 1 is the figure of base plate processing system in expression an embodiment of the invention.
Fig. 2 is hardware (hardware) structural drawing of EC in an embodiment of the invention.
Fig. 3 is the hardware structure diagram of PM in an embodiment of the invention.
Fig. 4 is the longitudinal section of PM in an embodiment of the invention.
The functional structure chart of EC in Fig. 5 an embodiment of the invention.
Fig. 6 is used for illustrating an embodiment of the invention continuous input in batches and the figure of discontinuous input in batches.
Fig. 7 is the process flow diagram of the batch processing program (routine) implemented in an embodiment of the invention of expression.
Fig. 8 is the process flow diagram of the simulation judgement/substrate processing program (when dropping into continuously in batches) representing to implement in an embodiment of the invention.
Fig. 9 is the figure of an example of the option A of last use in expression an embodiment of the invention.
Figure 10 is the figure of an example of employed option b in expression an embodiment of the invention.
Figure 11 is the figure of another example of employed option b in expression an embodiment of the invention.
Figure 12 is the process flow diagram of the simulation judgement/substrate processing program (during discontinuous in batches the input) representing to implement in an embodiment of the invention.
Figure 13 is the figure of another example of employed option b in expression an embodiment of the invention.
Figure 14 is the longitudinal section of another PM in an embodiment of the invention.
Figure 15 is the longitudinal section of another PM in an embodiment of the invention.
Symbol description:
10: base plate processing system
100：MES
200：EC
250: storage part
250a: etch processes scheme
250b: simulation process scheme
255: input part
260: drop into instruction unit in batches continuously
265: the discontinuous input instruction unit of batch
270: detection unit
275: simulation process enforcement portion
280: processing substrate enforcement portion
285: Department of Communication Force
290: efferent
300：MC
400：PM
425: the box platform
450: upper electrode
485: temperature sensor
500: lower electrode
Embodiment
Below, present invention will be described in detail with reference to the accompanying preferred embodiment.In addition, in the following description and accompanying drawing, all give same symbol, omit repeat specification same structure and textural element with common function.
And 1mTorr is (10 in this manual
-3* 101325/760) Pa, 1sccm are (10
-6/ 60) m
3/ sec.
(first embodiment)
At first, with reference to Fig. 1, the base plate processing system of the control device that uses first embodiment of the present invention is illustrated.In addition, in the present embodiment,, be that example describes with the etch processes as an example of using native system.
(base plate processing system)
At first, with reference to Fig. 1, the one-piece construction of base plate processing system is illustrated.
Base plate processing system 10, comprise MES (Manufacturing Execution System: make implementation system) 100, EC (Equipment Controller: device controller) 200, switch center (hub) 650, a n MC (Module Controller: module controller) 300a～300n, DIST (Distribution: distribute) plate 750, reach PM (Process Module: processing module) 400a～400n.
MES100 is made of signal conditioning package (for example PC (Personal Computer)), and management is provided with the manufacturing process of factory's integral body of a plurality of PM400, and the information of necessity is sent to not shown trunk system.LAN (Local Area Network)) MES100 is by LAN (Local Area Network: network 600 and be connected in EC200 such as.
EC200 control generally is controlled at the processing of being implemented among a plurality of PM400 thus by a plurality of MC300 that switch center 650 is connecting.Particularly, EC200 is transmitting control signal to each MC300 arbitrarily based on the scheme of the disposal route of representing the process object wafer W constantly.The transmission address switchover of the control signal that switch center 650 will be sent from EC200 is any MC300a～MC300n.Each MC300 controls based on the control signal of sending, and the wafer W of moving in the PM is implemented desirable processing (being etch processes in the present embodiment).Here, EC200 has the function as master end equipment, and MC300 has the function as slave end equipment.In addition, EC200 also has whether judgement carried out simulation process before implementing processing function, narrates about this point back.
MC300 by DIST plate 750 via GHOST (General High-Speed OptimumScalable Transceiver) network 700, be connected to a plurality of I/O port (400a1～400a3 that possess among each PM400,400b1～400b3 ..., on the 400n1～400n3).GHOST network 700 is networks of being controlled by the LSI (being called GHOST) on the MC plate that is equipped on MC300.Here, MC300 has the function as master end equipment, and the I/O port has the function as slave end equipment.MC300 will pass out to arbitrary I/O port with the corresponding actuation drive signals of the control signal that EC200 is sent.
The I/O port drives each unit by being communicated to this unit (each PM) that is arranged on each PM400 from the actuation drive signals that MC300 sends according to the instruction from EC200, and the signal of this unit output is communicated to MC300.
Then, with reference to Fig. 2 and Fig. 3, the hardware configuration of EC200 and PM400 is illustrated respectively.In addition, for the hardware configuration of MES100 and MC300, though not shown, have same structure with EC200.
(hardware configuration of EC)
As shown in Figure 2, EC200 has ROM205, RAM210, CUP215, bus 220, internal interface (inner I/F) 225 and external interface (exterior I/F) 230.
Record base program of in EC200, implementing and the program that when unusual, starts etc. among the ROM205.Accumulate among the RAM210 various programs and scheme are arranged.In the scheme of using when etch processes, definition is useful on order and the treatment conditions (for example, design temperature) of this moment of product wafer (chip glass) being implemented etch processes.And in the scheme of using when simulation process, definition is useful on order and the treatment conditions of this moment of non-product wafer (simulated wafer) being implemented simulation process.In addition, ROM205 and RAM210 are examples of memory storage, also can be memory storages such as EEPROM, CD, photomagneto disk, hard disk.
CPU215 controls the etch processes for the product wafer, and implements the simulation process for non-product wafer in the case of necessary.Bus 220 is paths of each exchanged between equipment information.
(hardware configuration of PM system)
As shown in Figure 3, PM400 (being equivalent to substrate board treatment) comprises first processed group 405, second processed group 410, conveyance unit 415, detent mechanism 420, reaches box platform 425.
First processed group 405 has uses plasma that wafer is implemented the PM (Process Module) 1 that reactive ion etching (RIE:Reactive Ion Etching) is handled.Second processed group 410 and first processed group, 405 configured in parallel have for implementing wafer enforcement COR (the Chemical Oxide Removal: chemical oxide removal) handle (the Post Heat Treatment: the back heat treated) PM2 that handles with PHT that PIE handles.
End in conveyance unit 415 is provided with the detent mechanism 420 of the location of carrying out wafer W.Detent mechanism 420 has in mounting makes universal stage 420a rotation under the state of wafer W, and detects the state of the periphery of wafer W by optical sensor 420b, carries out the location of wafer W thus.
On the sidewall of conveyance unit 415, be provided with box platform 425, mounting has 3 box container 425a1～425a3 in box platform 425.In each box container 425a, for example, at most 25 wafer W are housed in multilayer.
(inner structure of each PM and function)
Then, with reference to the longitudinal section of the PM1 that anticipates shown in Fig. 4 (PM2), inner structure and the function of each PM of implementing etch processes is illustrated.
PM1 (PM2) has at the angle of the cardinal principle central portion opening of the cardinal principle central portion of ceiling portion and bottom tubular container handling C.Container handling C for example is made of the aluminium that anodized was carried out on the surface.
In container handling, be provided with upper electrode 450 above it.With respect to container handling C electrical separation, this insulating element is arranged in the open circumferential portion on top of container handling C by insulating element 455 for upper electrode 450.On upper electrode 450, be connected with high frequency electric source 465 via match circuit 460.On match circuit 460, around it, be provided with matching box 470, become the ground connection framework of match circuit 460.
And, on upper electrode 450, be connected with processing gas supply part 480 via gas supply passageway 475, will supply in the container handling C from the desirable gas of handling gas supply part 480 supplies from a plurality of gas jetting holes 495.Like this, upper electrode 450 is waved effect as gas spray woods hair.On upper electrode 450, be provided with temperature sensor 485.Temperature sensor 485 detects near the temperature the upper electrode 450, as the temperature in the container handling.
In container handling, thereunder be provided with lower electrode 500.Lower electrode 500 has the function as the pedestal of mounting wafer W.Lower electrode 500 is supported by set supporter 510 via insulating element 505.Thus, lower electrode 500 is with respect to container handling C electrical separation.
Near the periphery of the opening on the bottom surface that is arranged at container handling C, an end of corrugated tube 515 is installed.The other end at corrugated tube 515 is fixed with lifter plate 520.By such structure, the bottom surface peristome of container handling C is undertaken airtight by corrugated tube 515 and lifter plate 520.And for the position of mounting wafer W being adjusted to the height corresponding to treatment process, lower electrode 500 becomes one with corrugated tube 515 and lifter plate 520 and carries out lifting.
On lower electrode 500, be connected with impedance adjustment part 530 via conductive path 525, and then, be connected with lifter plate 520.Upper electrode 450 and lower electrode 500 are equivalent to cathode electrode and anode electrode.By this structure, by exhaust gear 535 desirable vacuum tightness is arrived in the container handling inner pressure relief, by the switching of gate valve 540 with substrate W conveyance airtightly under the state of handling internal tank, supply to the container handling gas inside by the High frequency power that is applied plasmaization, substrate W is implemented desirable etch processes by the effect of the plasma that is generated.
(functional structure of EC)
Then, with reference to illustrating Fig. 5 of each function with module, the functional structure of EC200 is illustrated.EC200 has storage part 250, input part 255, drops into instruction unit 260, the function shown in each module of discontinuous input instruction unit 265, detection unit 270, simulation process enforcement portion 275, processing substrate enforcement portion 280, Department of Communication Force 285 and efferent 290 in batches continuously in batches.
Employed scheme more than 1 or 2 in the processing of storage part 250 memory substrate (comprising analog baseplate).In other words, storage part 250 stores the etch processes of order that expression is used for substrate W is carried out etch processes with scheme 250a and the simulation process scheme 250b that represents to be used for analog baseplate is carried out the order of simulation process.Input part 255 input expressions are by the information such as parameter of the simulation process utilization condition of operator's appointment.
Drop into instruction unit 260 in batches continuously, under the state that has first batch (constituting) by the product substrate in batch that comprises the substrate W in the etch processes, indicate continuous input in batches, make and then first in batches second batch that is made of the other products substrate in batch is handled continuously.For example, shown in the top of Fig. 6, at present moment, the 25 plate bases quilt that is comprised among consideration batch A conveyance successively carries out the situation of etch processes to PM1 in PM1.In the work of batch A, when the operator requires the work (processing) of batch B, drop into instruction unit 260 in batches continuously in response to this, to detection unit 270 indications " batch drops into continuously ".Under the common state of factory's work in 24 hours, when requiring processing in batches, in most of the cases, all be that indication should " drop into " in batches continuously.
Discontinuous input instruction unit 265 under the state that does not have the batch that is made of the product substrate in batch that comprises the substrate W in the etch processes, is indicated discontinuous input in batches in batches, makes a batch is carried out discontinuous processing.For example, shown in the below of Fig. 6, at present moment, do not exist conveyance to PM1, carry out under the situation (immediate shipment is changed to the situation of inoperative) of the substrate W of etch processes, in the work (processing) of the batch B that the operator will look for novelty, in batches discontinuous input instruction unit 265 is in response to this, to detection unit 270 indications " discontinuous input in batches ".Situation as having indicated " discontinuous input in batches " for example can list following situation: stop continuous input in batches in order to protect PM, the situation of the batch processing that will look for novelty behind cleaning PM; Because the situation of disaster or anything unexpected incident etc. is arranged, the long period does not allow PM work, thus, and the situation of processing in batches etc. of will looking for novelty under the situation that the atmosphere in PM plays pendulum.
As another example of the temperature in the relevant container handling, can list the etch processes defined design temperature T among the scheme 250a that uses in the substrate W etch processes of then carrying out; And the etch processes of using in the nearest last etch processes is with defined design temperature Told among the scheme 250a etc.
Simulation process enforcement portion 275 implements simulation process to analog baseplate in container handling.More specifically, before the product substrate is implemented etch processes, in order to be adjusted into the state that matches with treatment conditions in the container handling in advance, simulation process enforcement portion 275 with the order that defines among the scheme 250b, implements predetermined process to the analog baseplate of non-product based on simulation process.
Processing substrate enforcement portion 280 with defined order among the scheme 250a, implements predetermined process (being etch processes in the present embodiment) to substrate W based on etch processes in container handling.
If Department of Communication Force 285 receives the instruction from simulation process enforcement portion 275, then will be used for the control signal that conveyance is implemented simulation process to the analog baseplate of PM is sent among the MC300.MC300 sends to each actuating unit in the PM with the drive signal of responsive control signal, and each gearing response drive signal is moved, and thus, before the product substrate is implemented etch processes, will be adjusted into the state that matches with treatment conditions in the PM in advance.
In addition, if Department of Communication Force 285 receives the instruction from processing substrate enforcement portion 280, then will be used for the control signal that conveyance is implemented etch processes to the product substrate of PM is sent among the MC300.MC300 sends to each actuating unit in the PM with the drive signal of responsive control signal, and each gearing response drive signal is moved, and thus, in PM, the product substrate is implemented etch processes.When in the reason throughout unsuitable situation taking place, efferent 290 is shown in watch-dog 715 etc. with this situation, alert operator, or the information of necessity outputed in the loudspeaker 720 etc.
In addition, above each function of Shuo Ming EC200 is actually by CPU215 and implements to record and narrate the program that the processing sequence that realizes these functions is arranged, or is used to realize that the not shown IC etc. of each function reaches by control.For example, in the present embodiment, continuous each function that drops into instruction unit 260, the discontinuous input instruction unit 265 of batch, detection unit 270, simulation process enforcement portion 275, reaches processing substrate enforcement portion 280 of batch, being actually by CPU215 enforcement record has the program or the scheme of the processing sequence that realizes these functions to reach.
(action of EC)
Then, with reference to Fig. 7 the action by the batch processing (simulation judgement/processing substrate) that EC200 implemented is illustrated.Fig. 7 is the process flow diagram (master routine (main routine)) of the batch processing of expression EC200 enforcement.
In addition, before this processings of beginning,, be " dropping into continuously in batches " with the parameter setting of expression simulation process utilization condition by operator's operation, " discontinuous input in batches ", " in batches continuously/discontinuous input ", any in " nothing setting " etc." in batches continuously drop into " is corresponding when dropping into continuously in batches, and be selected by the operator when the inhibition of wishing simulation process is handled." in batches discontinuous input " be when not dropping in batches continuously when discontinuous inputs (in batches) corresponding, selected when wishing before the processing of batch, unconditionally to implement simulation process by the operator.It is selected by the operator the unconditional enforcement of simulation process the time when " in batches continuously/discontinuous input " is the inhibition of simulation process when wishing at the same time to drop into continuously in batches with discontinuous input the in batches.It is selected by the operator when common simulation process is implemented in hope " not having and set ", perhaps sets as default value under the nonoptional whatever situation of operator.
(batch processing)
Start button is " ON " if the operator makes in batches, then from the step 700 beginning batch processing of Fig. 7, enters step 705, and detection unit 270 judges whether this batch is dropped into continuously.Under the situation that 260 indications of input instruction unit drop in batches continuously continuously in batches, detection unit 270 judges that this batch is dropped into continuously, enters step 710, the simulation judgement/processing substrate (with reference to Fig. 8) when implementing to drop into continuously in batches, enter step 795, finish this processing.
On the other hand, under the situation of the discontinuous input of in batches discontinuous input instruction unit 265 indication batches, detection unit 270 judges that this is in batches by discontinuous input, enter step 715, simulation judgement/processing substrate (with reference to Figure 12) when implementing discontinuous in batches the input, enter step 795, finish this processing.
(simulation judgement/processing substrate: when dropping into continuously in batches)
Process flow diagram with reference to Fig. 8 describes the simulation judgement/processing substrate when the batch described in the step 710 drops into continuously.Simulation judgements/processing substrate when dropping in batches continuously begins to handle from the step 800 of Fig. 8, enters step 805, and detection unit 270 judges in simulation to use in the change parameter what has been set.Be set at simulation utilization change parameter under the situation of " dropping into continuously in batches " or " in batches continuously/discontinuous input ", detection unit 270 decision persons wish to suppress simulation process, enter step 810.
(parameter: drop in batches continuously or in batches continuously/discontinuous input)
Particularly, at first, in step 810, to be stored in by the actual temperature Tsen in the temperature sensor 485 detected container handlings among the PM actual temperature Tp, enter step 815, whether the etch processes of using in detection unit 270 judgement PM actual temperature Tp and this batch (substrate after this to be processed) (is equivalent to the 3rd decision condition) in predetermined interlocking value (interlock) below the Tsh1 with the absolute value of the difference of defined design temperature among the scheme 250a (scheme temperature T r).
Under the situation below the interlocking value Tsh1,, do not need simulation process at the absolute value of the difference of PM actual temperature Tp and scheme temperature T r, enter step 820 so detection unit 270 is judged owing to be stabilized in the state that is suitable for etch processes in the container handling.After processing substrate enforcement portion 280 implements etch processes for the substrate that belongs to this batch, enter step 825, scheme temperature T r is stored among the last scheme temperature T rold, enter step 895, finish this processing.
On the other hand, under the situation of absolute value greater than interlocking value Tsh1 of the difference of PM actual temperature Tp and scheme temperature T r,, need simulation process, enter step 830 so detection unit 270 is judged owing to be not stabilized in the state that is suitable for etch processes in the container handling.275 pairs of analog baseplates of simulation process enforcement portion are implemented simulation process, after processing substrate enforcement portion 280 implements etch processes for the substrate that belongs to this batch, enter step 825, scheme temperature T r is stored among the last scheme temperature T rold, enter step 895, finish this processing.
(parameter: do not have and set or the discontinuous input of batch)
More than, in step 805, will simulate the judgement of using change parameter to be set at the simulation process under " dropping into continuously in batches " or " continuous/discontinuous input in batches " situation and be illustrated.Then, in step 805, the judgement that will simulate the simulation process under the situation of using change parameter to be set at " do not have and set " or " discontinuous input in batches " describes.
In step 805, will simulate under the situation that the utilization change parameter is set at " do not have set " or " discontinuous input in batches " having judged, enter step 835, detection unit 270, the design temperature Trold of the scheme of using in the substrate of handling before judging recently and with the absolute value of the difference between the design temperature Tr of the scheme of the substrate of aftertreatment whether below predetermined interlocking value Tsh2 (being equivalent to first decision condition).
Fig. 9 represents the etch processes of using in the processing of nearest last batch one example of option A.Figure 10 represents subsequently the etch processes used in the processing in batches example with option b.Here interlocking value Tsh2 is 5 ℃, and etch processes is 80 ℃ with the design temperature (upper electrode temperature (electrode)) of option A, and etch processes also is 80 ℃ with the design temperature (upper electrode temperature (electrode)) of option b.
In this case, because etch processes is below the interlocking value Tsh2 with the design temperature of option A and etch processes with the difference of the design temperature of option b, so in detection unit 270 determination steps 835 is " YES ", enter step 840, whether have poor (being equivalent to second decision condition) between the setting RF electric power Pr (the top RF electric power of scheme for example shown in Figure 10) of the scheme of the average value P ave of the top RF electric power (the top RF electric power of scheme for example shown in Figure 9) of the scheme of using in the batch of handling before the judgement recently (affiliated a plurality of substrates) more than 1 or 2 and the substrate that will handle subsequently.
Used etch processes with under the situation of option A at the whole substrates that belong to batch, as shown in Figure 9, the average value P ave of the scheme top RF electric power before is " 1000W " recently.And as shown in figure 10, after this employed scheme top RF electric power Pr is " 900W ", and is unequal.In this case,, be necessary to carry out simulation process, enter step 830 so detection unit 270 is judged because the state in the container handling is not adjusted.After simulation process enforcement portion 275 carries out simulation process, enter step 820,280 pairs of substrates of processing substrate enforcement portion carry out etch processes, then, enter step 825, scheme temperature T rold before being stored in 80 ℃ of scheme temperature T r shown in Figure 10 (upper electrode temperature (electrode)) recently enters step 895, finishes this processing.
On the other hand, as shown in figure 11, is 80 ℃ corresponding to the etch processes of Fig. 9 with the design temperature Trold (upper electrode temperature (electrode)) of option A, etch processes is under 74 ℃ the situation with the design temperature Tr (upper electrode temperature (electrode)) of option b, etch processes with the design temperature of option A and etch processes with the difference of the design temperature of option b greater than interlocking value Tsh2 (=5 ℃).Thus, in this case, detection unit 270 judgements are necessary to carry out simulation process, judge to be " NO " in step 835, directly enter step 830, implement simulation process, then, in step 820, implement etch processes, enter step 825, scheme temperature T rold before being stored in scheme temperature T r recently enters step 895, finishes this processing.
And then, the absolute value (promptly satisfied first decision condition) interlocking value Tsh2 (=5 ℃) below of the difference of the design temperature Tr of the scheme of using in the design temperature Trold of the scheme of using in the batch processing before recently and the batch processing after this, under the situation of the scheme top RF electric power Pr that scheme top RF electric power average value P ave equals after this to use before recently (promptly satisfying second decision condition), detection unit 270 enters step 810.And, in the step 815 of step 810 and then, the scheme design temperature Trold that uses in the substrate that detection unit 270 had been handled before having judged recently and the absolute value of the difference of the scheme design temperature Tr of the substrate that will handle subsequently, under the situation that (promptly satisfies the 3rd decision condition) below the predetermined interlocking value Tsh2, detection unit 270 is judged does not need simulation process, in step 815, judging under the situation that does not satisfy the 3rd decision condition, judge and be necessary to carry out simulation process, carrying out necessary processing (step 820 respectively, step 825, step 830) afterwards, finish this processing.
As mentioned above, the simulation judgement/processing substrate when dropping into continuously according to the batch of present embodiment, corresponding to parameter, according to first decision condition, second decision condition, and the 3rd decision condition at least arbitrarily one judge whether carry out simulation process.And, judging under the situation that satisfies defined terms, be stabilized in the determination processing container can the treatment product substrate degree, do not implement simulation process, directly implement etch processes.The result is, the waste consumption of the resources such as High frequency power equal energy source, gas and analog baseplate that can suppress in the simulation process to be consumed, and can be used for the processing of product substrate the time that simulation process spent.The result is when saving the energy, can also improve productive capacity, and the productivity leap of product is risen.
In addition, so-called from before the processing of product substrate the scheme used set the value that electric power calculated, being not limited to belong to the mean value of the setting electric power of employed a plurality of schemes in a plurality of substrates of batch of last processing, for example also can be the setting electric power of the employed scheme of substrate handled recently.
(simulation judgement/processing substrate: when dropping into continuously in batches)
Simulation judgement/processing substrate when then, dropping into the batch described in the step 715 is discontinuous with reference to the process flow diagram of Figure 12 describes.Simulation judgements/processing substrate during in batches discontinuous the input begins to handle from the step 1200 of Figure 12, enters step 805, and detection unit 270 judges in simulation to use in the change parameter what has been set.
(parameter: discontinuous input or continuous/discontinuous input in batches in batches)
Be set at simulation utilization change parameter under the situation of " discontinuous input in batches " or " continuous/discontinuous input in batches ", detection unit 270 decision persons wish unconditionally to implement simulation process, enter step 830.
In this case, even in processing subsequently under employed scheme upper electrode temperature Tr and the situation that detected temperatures Tsen equates, or in processing subsequently employed scheme upper electrode temperature Tr (with reference to the etch processes option b of Figure 10) with recently before processing under the scheme upper electrode temperature Trold (with reference to the etch processes option A of Figure 13) that the uses situation about equating, simulation process enforcement portion 275 implements simulation process to analog baseplate in step 830, processing substrate enforcement portion 280 implements etch processes to the substrate that belongs to this batch in step 820, enter step 825 afterwards, scheme temperature T rold before being stored in scheme temperature T r recently, enter step 1295, finish this processing.
(parameter: do not have and set or drop into continuously in batches)
On the other hand, simulation utilization change parameter is set under the situation of " do not have and set " or " dropping into continuously in batches " in step 805, and in the step 815 after the step 810, detection unit 270 judges whether satisfy the 3rd decision condition.Judging under the situation that in step 815, does not satisfy the 3rd decision condition, judge and be necessary to carry out simulation process, in step 830, implement simulation process, in step 820, implement etch processes, afterwards, enter step 825, scheme temperature T r is stored in recently scheme temperature T rold before, enter step 895, finish this processing.
On the other hand, judging under the situation that in step 815, satisfies the 3rd decision condition, detection unit 270 enters step 1205, judges whether whether the absolute value of the difference of last scheme temperature T rold and scheme temperature T r (satisfy the 3rd decision condition) in the scope of interlocking value Tsh2.
Under the situation of absolute value in the scope of interlocking value Tsh2 of the difference of last scheme temperature T rold and scheme temperature T r, detection unit 270 is judged not to be needed to carry out simulation process, enters step 820.Processing substrate enforcement portion 280 implements etch processes to substrate in step 820, in step 825 scheme temperature T r is stored in last scheme temperature T rold, enters step 1295, finishes this processing.
On the other hand, under the situation of absolute value greater than interlocking value Tsh2 of the difference of last scheme temperature T rold in step 1205 and scheme temperature T r, detection unit 270 is judged and is necessary to carry out simulation process, enters step 830.After simulation process in having implemented step 830, the etch processes in the step 820, enter step 825, scheme temperature T r is stored in last scheme temperature T rold, enter step 1295, finish this processing.
Under the discontinuous situation of implementing processing in batches, think need through the long time till the processing constantly of the batch that will handle subsequently to begin constantly from the processing of the batch (product substrate) handled recently.For example, after the maintenance of substrate board treatment, drop into the class situation that batch is arranged.In this case, the state collapse in the container handling, instability.Therefore, before the treatment product substrate, be necessary to adjust state in the container handling.Particularly, for the foregoing reasons, be necessary to control in advance temperature conditions.
For this point, as mentioned above, simulation judgement/processing substrate when dropping into according to the batch in the present embodiment is discontinuous, (parameter is under the situation of " discontinuous input in batches " or " continuous/discontinuous input in batches ") unconditionally implements simulation process under the situation of the processing when parameter is appointed as discontinuous in batches the input.The result is before the processing of carrying out the product substrate, the state in the container handling can be adjusted into stable status reliably.
In the simulation judgement/processing substrate (dropping into continuously in batches) of Fig. 8, judge first decision condition in step 835, judge second decision condition in step 840, judge the 3rd decision condition in step 815.In addition, in the simulation judgement/processing substrate (discontinuous input in batches) of Figure 12, judge first decision condition, judge the 3rd decision condition in step 815 in step 1205.
Like this, detection unit 270 can be only by dropping into instruction unit 260 in batches continuously when having indicated continuous input in batches, judge based on second decision condition or the condition that comprises second decision condition.
In addition, indicating continuous input in batches by dropping into instruction unit 260 in batches continuously, be not specified under the situation of parameter (being set at the situation of " setting " or " discontinuous input in batches " in the parameter) as the utilization condition of simulation process when dropping in batches continuously, detection unit 270 also can not judged first decision condition, not judge second decision condition, do not judge the 3rd decision condition in step 815 in step 840 in the step 835 of Fig. 8, but whether the state of temperature of determination processing container C is adjusted.
(variation 1 of substrate board treatment)
Substrate board treatment is not limited to PM400 shown in Figure 3, for example can also be the structure shown in the PM400u of Figure 14.PM400u comprises box chamber (C/C) 400u1,400u2; Transfer chamber (T/C) 400u3; Pre-determined bit device (P/A) 400u4; Treatment chamber (P/C) (=PM) structure of 400u5,400u6.
In box chamber 400u1,400u2, contain the product substrate after handling preceding product substrate (wafer W) and handling, and contain for example 3 non-product substrates that simulation process is used at the orlop of box.Pre-determined bit device 400u4 carries out the location positioning of wafer W.
Among the transfer chamber 400u3, be provided with arm 400u31 scalable and the multi-joint shape that rotates.Arm 400u31 remains on wafer W on the fork 400u32 on the front end that is arranged at arm 400u31, when carrying out suitably flexible and rotating, and conveyance wafer W between box chamber 400u1,400u2 and pre-determined bit device 400u4 and treatment chamber 400u5,400u6.
In the PM400u of this spline structure, as mentioned above, in treatment chamber 400u5,400u6, wafer is implemented to judge and whether to implement simulation process before the processing of etch processes etc.And, under unwanted situation, do not implement simulation process, wafer W is moved among treatment chamber 400u5, the 400u6, implement actual processing.Yet, drop under the situation in batches discontinuous, in treatment chamber 400u5,400u6,, must implement simulation process to before the operations such as wafer W enforcement etch processes.
(variation 2 of substrate board treatment)
Moreover substrate board treatment can also be the structure shown in the PM400t of Figure 15.PM400t, the conveyer H with conveyance wafer W with carry out for wafer W that film forming is handled or the disposal system S of the processing substrate of etch processes etc.Conveyer H and disposal system S link together via load locking room (LLM:Load Lock Module) 400t1,400t2.
Conveyer H has box platform 400H1 and conveyance platform 400H2.On box platform 400H1, be provided with container mounting table H1a, container mounting table H1a uploads and is equipped with 4 box container H1b1～H1b4.Each box container H1b, the non-product substrate that product substrate (wafer W) that can processing is preceding, the product substrate after the processing and simulation process are used is housed in multilayer.
On conveyance platform 400, be supported with 2 carrying arm H2a1, H2a2 scalable and rotation, can and slide and move by the magnetic driving.Carrying arm H2a1, H2a2 remain on wafer W on the fork that is installed on its front end.
At the end of conveyance platform 400H2, be provided with the detent mechanism H2b of the location positioning of carrying out wafer W.Detent mechanism H2b has in mounting makes universal stage H2b1 rotate under the state of wafer W, detect the state of the surrounding edge portion of wafer W by optical sensor H2b2, carries out the location of wafer W thus.
In load locking room 400t1,400t2, portion is provided with the mounting table of mounting wafer W respectively within it, and be respectively arranged with at its two ends can airtight switching gate valve t1a, t1b, t1c, t1d.Utilize such structure, conveyer H can be between box container H1b1～H1b3 and load locking room 400t1,400t2 and detent mechanism H2b the conveyance wafer W.
In disposal system S, be provided with transfer chamber (T/C) 400t3, and 6 treatment chamber (P/C) 400s1～400s6 (=PM1～PM6).Transfer chamber 400t3 is via the gate valve s1a～s1f that can open and close airtightly, and 400s1～400s6 engages respectively with treatment chamber.In transfer chamber 400t3, be provided with arm Sa scalable and rotation.
By this structure, disposal system is used arm Sa, with wafer W from load locking room 400t1,400t2, via transfer chamber 400t3, move into treatment chamber 400s1～400s6, after to processing such as wafer W enforcement etch processes,, take out of to load locking room 400t1,400t2 once more via transfer chamber 400t3.
In the PM400t of this spline structure, also be as mentioned above, in treatment chamber 400s1～400s6,, judge and whether carry out simulation process before the processing such as wafer W enforcement etch processes.And, under unwanted situation, do not carry out simulation process, wafer W is moved into treatment chamber 400s1～400s6, carry out actual processing.Yet, drop under the situation in batches discontinuous, in treatment chamber 400s1～400s6,, necessarily implement simulation process to before the processing such as wafer W enforcement etch processes.
In the above-described embodiment, the action of each one is interrelated, can replace as a series of action considering the while that is mutually related.And, by such displacement, can make the embodiment of invention of the control device of control basal plate treating apparatus, become the embodiment of the control method of control basal plate treating apparatus.
And, the action of above-mentioned control device each several part can also be replaced into the processing of each several part, can become the embodiment of the control program of control basal plate treating apparatus thus.And, be stored in by control program in the recording medium of embodied on computer readable substrate board treatment, can access the embodiment that the embodiment of control program is recorded in the recording medium of the embodied on computer readable in the control program.
More than, with reference to accompanying drawing preferred implementation of the present invention is illustrated, still, the present invention is not limited only to these examples certainly.So long as the insider, can both understand and can in the claim scope, carry out various changes and obtain revising example, should be appreciated that these all should belong to technical scope of the present invention certainly.
For example, no matter the kind of the substrate board treatment that the present invention relates to can be a capacitive coupling plasma processing apparatus, also can be induction coupled mode plasma processing apparatus, can also be microwave plasma processing apparatus.And substrate board treatment of the present invention can be a device of handling large-size glass substrate, also can be the device of handling the substrate of common wafer size.
And, in substrate board treatment of the present invention, also be not limited to film formation device or etch processes, also can carry out all processing substrate such as heat diffusion treatment, ashing treatment, sputter process.
And, the function of control device of the present invention, can by among EC200 or the MC300 any one reaches at least.
Claims (13)
1. the control device of a substrate board treatment is characterized in that:
Implement the processing substrate enforcement portion of predetermined processing and the simulation process enforcement portion that non-product substrate is implemented simulation process by being provided with for the product substrate, the control basal plate treating apparatus,
Comprise detection unit, obtain the information of the temperature of using about the atmosphere of adjusting in the container handling that is provided with in the described substrate board treatment,, judge whether the state of temperature in the described container handling is adjusted based on obtained temperature information,
Under the controlled situation of judging by described detection unit in the described container handling of state of temperature, in described simulation process enforcement portion, do not implement described simulation process, described processing substrate enforcement portion implements predetermined processing for the product substrate.
2. the control device of substrate board treatment according to claim 1 is characterized in that:
Also comprise employed one or more the storage part of scheme in the processing of memory substrate,
Described detection unit, whether the absolute value of difference of judging the scheme design temperature that uses in the processing of the scheme design temperature that uses in the processing of last product substrate in the scheme of storing in the described storage part and product substrate subsequently is below setting, as first decision condition, judge whether the state of temperature of described container handling is adjusted.
3. the control device of substrate board treatment according to claim 2 is characterized in that:
Described detection unit, on the basis of satisfying described first decision condition, judgement from before the processing of product substrate the scheme used set value that electric power calculated, with the processing of product substrate subsequently in the scheme used set electric power whether exist poor, as second decision condition, judge whether the state of temperature of described container handling is adjusted.
4. the control device of substrate board treatment according to claim 3 is characterized in that:
Described substrate board treatment comprises the temperature sensor that detects the temperature in the described container handling,
Described detection unit is obtained by the temperature in the detected container handling of described temperature sensor, whether the absolute value of the difference of the scheme design temperature that uses in the processing of the temperature in the container handling that judgement obtains and product substrate subsequently is below setting, as the 3rd decision condition, judge whether the state of temperature of described container handling is adjusted.
5. the control device of substrate board treatment according to claim 3 is characterized in that:
Also comprise the continuous instruction unit that drops into of batch, its indication continuous input in batches makes after first batch that is made of the product substrate in batch that comprises the product substrate in the processing, handles second batch that is made of the other products substrate in batch continuously,
Described detection unit has only been indicated under the situation of continuous input in batches being dropped into instruction unit continuously by described batch, judges based on described first decision condition or described first decision condition and described second decision condition.
6. the control device of substrate board treatment according to claim 1 is characterized in that:
Also comprise in batches discontinuous input instruction unit, its indication discontinuous input in batches makes under the state that does not have the batch that is made of the product substrate in batch that comprises the product substrate in the processing, and discontinuous enforcement is for the processing of a batch,
Described simulation process enforcement portion, indicated discontinuous input in batches by the discontinuous input instruction unit of described batch, discontinuous input is appointed as under the situation of parameter as the utilization condition of simulation process in batches, do not implement described judgement at described detection unit, before the product substrate of the batch of discontinuous input is implemented described predetermined process, non-product substrate is implemented simulation process.
7. the control device of substrate board treatment according to claim 4 is characterized in that:
Described detection unit is corresponding to the parameter of the utilization condition of the specified simulation process of expression, according to any one decision condition at least in described first decision condition, described second decision condition and described the 3rd decision condition, judge whether the state of temperature of described container handling is adjusted.
8. the control device of substrate board treatment according to claim 7 is characterized in that:
Also comprise the continuous instruction unit that drops into of batch, its indication continuous input in batches makes after first batch that is made of the product substrate in batch that comprises the product substrate in the processing, handles second batch that is made of the other products substrate in batch continuously,
Described detection unit is dropped into instruction unit indication continuous input in batches continuously by described batch, be designated as under the situation of described parameter dropping in batches continuously, judge by described the 3rd decision condition whether the state of temperature of described container handling is adjusted as the utilization condition of simulation process.
9. the control device of substrate board treatment according to claim 7 is characterized in that:
Also comprise the continuous instruction unit that drops into of batch, its indication continuous input in batches makes after first batch that is made of the product substrate in batch that comprises the product substrate in the processing, handles second batch that is made of the other products substrate in batch continuously,
Described detection unit is dropped into instruction unit indication continuous input in batches continuously by described batch, continuous in batches input does not have to be designated as under the situation of described parameter as the utilization condition of simulation process, judges by described first decision condition and described second decision condition whether the state of temperature of described container handling is adjusted.
10. the control device of substrate board treatment according to claim 7 is characterized in that:
Also comprise the continuous instruction unit that drops into of batch, its indication continuous input in batches makes after first batch that is made of the product substrate in batch that comprises the product substrate in the processing, handles second batch that is made of the other products substrate in batch continuously,
Described detection unit is dropped into instruction unit indication continuous input in batches continuously by described batch, continuous in batches input does not have to be designated as under the situation of described parameter as the utilization condition of simulation process, judges by described first decision condition, described second decision condition and described the 3rd decision condition whether the state of temperature of described container handling is adjusted.
11. the control device of substrate board treatment according to claim 7 is characterized in that:
Also comprise in batches discontinuous input instruction unit, its indication discontinuous input in batches makes under the state that does not have the batch that is made of the product substrate in batch that comprises the product substrate in the processing, and discontinuous enforcement is for the processing of a batch,
Described simulation process enforcement portion is by the discontinuous input instruction unit indication of described batch discontinuous input in batches, in batches discontinuous input is designated as under the situation of described parameter as the utilization condition of simulation process, in described detection unit, do not implement described judgement, before the product substrate of the batch of discontinuous input is implemented described predetermined process, non-product substrate is implemented simulation process.
12. the control device of substrate board treatment according to claim 7 is characterized in that:
Also comprise in batches discontinuous input instruction unit, its indication discontinuous input in batches makes under the state that does not have the batch that is made of the product substrate in batch that comprises the product substrate in the processing, and discontinuous enforcement is for the processing of a batch,
Described simulation process enforcement portion is by the discontinuous input instruction unit indication of described batch discontinuous input in batches, the discontinuous input of batch does not have to be designated as under the situation of described parameter as the utilization condition of simulation process, judges by described first decision condition and described the 3rd decision condition whether the state of temperature of described container handling is adjusted.
13. the control method of a substrate board treatment, control is characterized in that the substrate board treatment of product substrate enforcement predetermined processing:
Obtain the information of the temperature of using about the atmosphere of adjusting in the container handling,
Judge based on obtained temperature information whether the state of temperature in the described container handling is adjusted,
Under the controlled situation of state of temperature in having judged described container handling, non-product substrate is not implemented simulation process, and implement described predetermined process for the product substrate.
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| JP2006091102A JP5128080B2 (en) | 2006-03-29 | 2006-03-29 | Control device for substrate processing apparatus and control method thereof |
| JP2006-091102 | 2006-03-29 | ||
| JP2006091102 | 2006-03-29 |
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| JP (1) | JP5128080B2 (en) |
| KR (1) | KR100882221B1 (en) |
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| JP2008288282A (en) * | 2007-05-15 | 2008-11-27 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
| JP5463066B2 (en) | 2009-04-30 | 2014-04-09 | 東京エレクトロン株式会社 | Lot processing start determination method and control device |
| TWI524388B (en) * | 2013-12-27 | 2016-03-01 | Hitachi Int Electric Inc | A substrate processing apparatus, a manufacturing method of a semiconductor device, and a recording medium |
| JP6501601B2 (en) | 2014-05-20 | 2019-04-17 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method and substrate processing program |
| US20200152494A1 (en) * | 2018-11-14 | 2020-05-14 | Cyberoptics Corporation | Wafer-like sensor |
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| CN1617297A (en) * | 2003-11-12 | 2005-05-18 | 东京毅力科创株式会社 | Base board processor and its control method |
| CN1653606A (en) * | 2002-05-15 | 2005-08-10 | 东京毅力科创株式会社 | Substrate processing apparatus and substrate processing method |
| CN1664987A (en) * | 2004-03-05 | 2005-09-07 | 东京毅力科创株式会社 | Base plate processing device,base plate processing method and progarm |
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| JP2511288B2 (en) * | 1988-03-14 | 1996-06-26 | 富士通株式会社 | Semiconductor device heat treatment method |
| US5925212A (en) * | 1995-09-05 | 1999-07-20 | Applied Materials, Inc. | Apparatus and method for attaining repeatable temperature versus time profiles for plasma heated interactive parts used in mass production plasma processing |
| JP3568749B2 (en) | 1996-12-17 | 2004-09-22 | 株式会社デンソー | Dry etching method for semiconductor |
| KR19980068383A (en) * | 1997-02-19 | 1998-10-15 | 김광호 | Dummy lot flow control method |
| JPH11288990A (en) * | 1998-04-01 | 1999-10-19 | Hitachi Ltd | Processing method and device thereof, and semiconductor production line and transfer method of processed substrate thereof |
| JP3660582B2 (en) * | 2000-12-04 | 2005-06-15 | 株式会社日立製作所 | Plasma etching processing equipment |
| KR100476931B1 (en) * | 2002-09-19 | 2005-03-16 | 삼성전자주식회사 | Method of optimizing seasoning recipe |
| US20050233477A1 (en) * | 2004-03-05 | 2005-10-20 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method, and program for implementing the method |
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| CN1653606A (en) * | 2002-05-15 | 2005-08-10 | 东京毅力科创株式会社 | Substrate processing apparatus and substrate processing method |
| CN1617297A (en) * | 2003-11-12 | 2005-05-18 | 东京毅力科创株式会社 | Base board processor and its control method |
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| KR20070098685A (en) | 2007-10-05 |
| JP5128080B2 (en) | 2013-01-23 |
| JP2007266410A (en) | 2007-10-11 |
| TW200746244A (en) | 2007-12-16 |
| KR100882221B1 (en) | 2009-02-06 |
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