JP5128080B2 - Control device for substrate processing apparatus and control method thereof - Google Patents

Description

The present invention relates to a control device and control how controlling the substrate processing apparatus for performing predetermined processing on the product substrate. In particular, it relates to a control device and control how determines whether to execute a dummy process in order to condition in the processing chamber.

  In general, in a substrate processing apparatus, substrate processing such as CVD (Chemical Vapor Deposition) processing, etching processing, and ashing processing is performed based on a procedure defined in a predetermined recipe. Among these, in the CVD process, when a film is formed on a large number of substrates, the film is gradually deposited on the inner wall of the processing container. In the etching process, when the film formed on the substrate is scraped off, the reaction product is decomposed by the plasma and adheres to the inner wall of the processing container. These foreign substances are not preferable because the inside of the processing container is peeled or detached from the inner wall of the processing container by repeated heating and cooling, and falls as particles onto the substrate, thereby degrading the performance of the product after processing.

  Therefore, in order to avoid the above-mentioned particle problem, a technique of regularly cleaning the inside of the processing container and seasoning to automatically adjust the atmosphere in the processing container after the cleaning process has been conventionally known ( For example, see Patent Document 1.) In this seasoning process, a dummy process is performed on a non-product substrate based on a procedure shown in a predetermined recipe, thereby adjusting the state of the substrate processing apparatus.

Japanese Patent Laid-Open No. 10-233387

  However, it is considered unnecessary to perform dummy processing when the state in the processing container is stable. Moreover, at this time, it is considered unnecessary to consider conditions other than temperature such as pressure. The reason will be described next. In other words, temperature is the worst response among process conditions. For example, even if the set temperature of a heater or the like provided in the substrate processing apparatus is changed to match the process conditions, in response to this, until the temperature in the processing container stabilizes to a temperature that matches the process conditions, It takes a considerable amount of time.

  For this reason, if the state in the processing container is not stable, prior to processing the product substrate, the temperature is first changed to a value that matches the process conditions, and the actual temperature in the processing container gradually shifts to the set temperature. I have to wait for it. As described above, when the state in the processing container is not prepared, it is necessary to control the temperature condition in advance from the poor response. From this point of view, when the state in the processing container is not stable, the significance of the dummy process executed to prepare the state in the processing container (particularly, the temperature state) in advance is significant.

  In contrast, process conditions other than temperature, such as pressure and input power, are relatively responsive. For example, even if the gas flow rate, gas exhaust amount, and power supply amount are changed to values that match the process conditions, the state in the processing vessel reaches the target value relatively instantaneously. Therefore, in order to adjust process conditions other than temperature, performing dummy processing in advance of substrate processing is not only a waste of various resources such as energy and materials used for this processing, but also unnecessary dummy processing. When executed, the product cannot be produced during that time, resulting in a problem that the throughput is lowered and the productivity of the product is lowered.

  In order to solve the above problems, in the present invention, a control apparatus for a substrate processing apparatus, a control method thereof, and a control for determining whether or not to execute a dummy process for adjusting the state in the processing container based on a temperature-related condition A program is provided.

That is, in order to solve the above-described problem, according to one aspect of the present invention, a substrate processing execution unit that executes predetermined processing on a product substrate and a dummy processing execution unit that executes dummy processing on a non-product substrate And a control device for controlling the substrate processing apparatus. The control device is configured to store one or more recipes used for substrate processing, and to adjust the atmosphere in the processing container provided in the substrate processing device from the recipe stored in the storage unit. And a determination unit that determines whether or not the temperature state in the processing container is adjusted based on the acquired temperature information, and the substrate processing execution unit is configured to perform the determination by the determination unit. When it is determined that the temperature state of the processing container is adjusted, the predetermined processing is performed on the product substrate without causing the dummy processing execution unit to execute the dummy processing, and the product substrate being processed is further processed. There is a lot non-continuous input instruction section that instructs non-continuous input of lots so that processing for one lot is executed discontinuously in the state where there are no lots of product boards that contain The dummy process execution unit, when the non-continuous lot input instruction is instructed by the lot non-continuous input instruction unit, does not cause the determination unit to execute the determination, and the product substrates of the lots that are input non-continuously On the other hand, a dummy process is performed on the non-product substrate before the predetermined process is performed .

  When a predetermined process such as an etching process is performed on a product substrate, it is necessary to prepare the atmosphere in the processing container in a state that matches the process conditions in advance. In particular, in the case of temperature, as described above, since it takes a considerable time for the actual temperature in the processing container to reach the target value, the significance of the dummy process executed to prepare the temperature state in the processing container in advance is significant. Is big.

  However, process conditions other than temperature, such as pressure and input power, are relatively responsive. For example, even if the gas flow rate, gas displacement, and power supply are changed to values that match the process conditions, the processing container The state inside reaches the target value relatively quickly. For this reason, it is not a good idea to perform a dummy process at a large cost and time in order to prepare a state other than the temperature in the processing container in advance.

  Therefore, according to the present invention, when it is determined that the temperature state of the processing container is adjusted, a predetermined process such as an etching process is performed on the product substrate without executing the dummy process. . As a result, it is possible to suppress wasteful consumption of resources such as energy and materials such as gas and power consumed when executing the dummy processing. Furthermore, the time spent for executing the dummy process can be efficiently used for product production. As a result, it is possible to dramatically improve product productivity by improving throughput while saving energy.

  Furthermore, a storage unit for storing one or more recipes used for processing the product substrate is provided, and the determination unit is a recipe used for processing the previous product substrate among the recipes stored in the storage unit. It may be determined whether or not the temperature state of the processing container is adjusted by comparing the set temperature of the recipe and the set temperature of the recipe used for processing the next product substrate as the first determination condition.

  In addition to the first determination condition, the determination unit includes a value calculated from the set power of the recipe used for processing the previous product substrate and the set power of the recipe used for processing the next product substrate. May be determined as a second determination condition to determine whether or not the temperature state of the processing container is adjusted. Here, the value calculated from the set power of the recipe used for processing the previous product substrate is an average value of the set power of the plurality of recipes used for the plurality of substrates belonging to the lot processed immediately before. Alternatively, it may be the set power of the recipe used for the substrate processed most recently.

  The substrate processing apparatus includes a temperature sensor that detects a temperature in the processing container, and the determination unit acquires the temperature in the processing container detected by the temperature sensor, and the acquired temperature in the processing container It may be determined whether or not the temperature state of the processing container is adjusted by comparing the set temperature of the recipe used for processing the next product substrate as a third determination condition.

  According to this, it is determined whether or not the temperature state of the processing container is adjusted based on the difference between the actual temperature in the processing container and the set temperature of the recipe. In this way, by comparing the actual temperature with the set temperature of the recipe used in the next process, it is possible to accurately determine whether the temperature state of the processing container is adjusted according to the actual state of the processing container. it can. As a result, it is possible to more accurately determine whether or not dummy processing is necessary.

  The temperature in the processing vessel detected by the sensor is preferably the temperature in the vicinity of the upper electrode. For example, the temperature in the vicinity of the lower electrode, the temperature of the mounting table on which the substrate is placed, the temperature of the side wall of the processing vessel, Any detected value may be used as long as it is a value indicating the temperature state in the processing container, such as a set temperature.

  When lot processing is performed discontinuously, it is considered that a relatively long time has elapsed from the processing time of the lot (product substrate) processed immediately before to the processing time of the next processed lot. For example, this is a case where a lot is inserted after maintenance of the substrate processing apparatus. In such a case, the state in the processing container has collapsed and is not stable. For this reason, it is necessary to prepare the state in the processing container before processing the product substrate. In particular, the temperature conditions need to be controlled in advance for the reasons described above.

  Therefore, in the present invention, when a non-continuous lot input is instructed, a dummy process is performed on a non-product substrate before the product substrate is unconditionally etched without waiting for a determination by the determination unit. Is done. As a result, even when lots that are very likely to have lost their condition in the process container are not continuously loaded, the dummy process can be performed to ensure that the condition in the process container is maintained. it can. As a result, the process for the product substrate can be executed with high accuracy.

  The determination unit is configured based on at least one of the first determination condition, the second determination condition, and the third determination condition in accordance with a parameter indicating an operation condition of the designated dummy process. It may be determined whether the temperature state of the processing container is adjusted.

  At this time, when the lot continuous input instruction is instructed by the lot continuous input instructing unit and the lot continuous input time is specified as the operation condition of the dummy process by the parameter, the determination unit It may be determined whether the temperature state of the processing container is adjusted.

  In addition, when the lot continuous input instruction is instructed by the lot continuous input instruction unit and the lot continuous input time is not specified as the operation condition of the dummy process by the parameter, the determination unit is It may be determined whether or not the temperature state of the processing container is adjusted according to the second determination condition.

  Alternatively, when the lot continuous input instruction is instructed by the lot continuous input instructing unit and the lot continuous input time is not specified as the operation condition of the dummy process by the parameter, the determination unit is the first determination condition, It may be determined whether or not the temperature state of the processing container is adjusted according to the second determination condition and the third determination condition.

  The dummy process execution unit is instructed to the determination unit when the lot non-continuous input instruction is instructed by the lot non-continuous input instruction unit, and when the lot non-continuous input is specified as an operation condition of the dummy process by the parameter. A dummy process may be performed on the non-product substrate before the predetermined process is performed on the non-continuously loaded product substrates without executing the determination.

  According to this, when the parameter specifies the processing when lots are not continuously inserted, the dummy processing is executed unconditionally. As a result, the atmosphere in the processing container can be surely adjusted to a stable state before processing the product substrate.

  The dummy process execution unit is configured to perform the first determination when the lot non-continuous input is instructed by the lot non-continuous input instruction unit, and when the lot non-continuous input is not specified as an operation condition of the dummy process by the parameter. It may be determined whether or not the temperature state of the processing container is adjusted according to the condition and the third determination condition.

In order to solve the above-described problem, according to another aspect of the present invention, there is provided a method for controlling a substrate processing apparatus that performs a predetermined process on a product substrate, for adjusting an atmosphere in the processing container. Information on the temperature of the processing vessel is obtained, and it is determined whether or not the temperature state in the processing container is adjusted based on the acquired temperature information, and it is determined that the temperature state of the processing vessel is adjusted. In this case, the predetermined process is performed on the product substrate without performing the dummy process on the non-product substrate, and there is no lot including the product substrate group including the product substrate being processed. , When a non-continuous input of a lot is instructed so that the processing for one lot is executed discontinuously, the determination is not performed and the product substrate of the non-continuous input lot Control method of a substrate processing apparatus which executes a dummy process on non-product substrates before the process is performed is provided.

  According to this, when it is determined that the temperature state of the processing container is adjusted, a predetermined process is performed on the product substrate without executing the dummy process. As a result, it is possible to suppress the consumption of resources such as energy and materials consumed for the execution of the dummy process. Also, the time spent on dummy processing up to now can be used for processing product substrates. As a result, it is possible to dramatically improve product productivity by improving throughput while saving energy.

  As described above, according to the present invention, when it is determined that the temperature state of the processing container is adjusted based on the temperature-related condition, the dummy process is omitted and the predetermined process is performed on the product substrate. can do.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description and the accompanying drawings, components having the same configuration and function are denoted by the same reference numerals, and redundant description is omitted.

In this specification, 1 mTorr is (10 ⁻³ × 101325/760) Pa, and 1 sccm is (10 ⁻⁶ / 60) m ³ / sec.

(First embodiment)
First, a substrate processing system using a control device according to a first embodiment of the present invention will be described with reference to FIG. In the present embodiment, an etching process will be described as an example of a process using the present system.

(Substrate processing system)
First, the overall configuration of the substrate processing system will be described with reference to FIG.
The substrate processing system 10 includes an MES (Manufacturing Execution System) 100, an EC (Equipment Controller) 200, a switching hub 650, and n MC (Modules).
Controller) 300a to 300n, DIST (Distribution) board 750, and PM (Process Module) 400a to 400n.

The MES 100 is composed of an information processing device (for example, a PC (Personal Computer)), manages the manufacturing process of the entire factory where a plurality of PMs 400 are installed, and transmits / receives necessary information to a core system (not shown). The MES 100 is a LAN (Local
It is connected to the EC 200 by a network 600 such as an area network.

  The EC 200 controls the plurality of MCs 300 connected through the switching hub 650, thereby controlling the processes executed by the plurality of PMs 400 in an integrated manner. Specifically, the EC 200 transmits a control signal to each MC 300 at an arbitrary timing based on a recipe showing a processing method of the wafer W to be processed. The switching hub 650 switches the transmission destination of the control signal transmitted from the EC 200 to one of MC 300a to MC 300n. Each MC 300 performs control such that a desired process (etching process in the present embodiment) is performed on the wafer W loaded into the PM based on the transmitted control signal. Here, the EC 200 functions as a master device, and the MC 300 functions as a slave device. The EC 200 also has a function of determining whether or not to execute a dummy process before executing a process, which will be described later.

  The MC 300 includes a plurality of I / O ports (400a1 to 400a3, 400b1 to 400b3,..., 400n1 to 400n3) provided in each PM 400 via a GHOST (General High-Speed Optimum Scalable Transceiver) network 700 by a DIST board 750. ) Is connected to each. The GHOST network 700 is a network controlled by an LSI (referred to as GHOST) mounted on the MC board of the MC 300. Here, the MC 300 functions as a master device, and the I / O port functions as a slave device. The MC 300 transmits an actuator drive signal corresponding to the control signal transmitted from the EC 200 to any I / O port.

  The I / O port transmits each actuator drive signal transmitted from the MC 300 to the corresponding unit (each PM) provided in each PM 400 to drive each unit in accordance with a command from the EC 200 and is output from the corresponding unit. A signal is transmitted to MC300.

  Next, the hardware configuration of the EC 200 and PM 400 will be described with reference to FIGS. The hardware configuration of the MES 100 and MC 300 is not shown, but is the same as that of the EC 200.

(EC hardware configuration)
As shown in FIG. 2, the EC 200 includes a ROM 205, a RAM 210, a CPU 215, a bus 220, an internal interface (internal I / F) 225, and an external interface (external I / F) 230.

  The ROM 205 stores a basic program executed by the EC 200, a program that is activated when an abnormality occurs, and the like. The RAM 210 stores various programs and recipes. In the recipe used at the time of the etching process, a procedure for performing the etching process on the product wafer (glass wafer) and process conditions (for example, set temperature) at that time are defined. In addition, the recipe used for dummy processing defines a procedure for executing dummy processing on a non-product wafer (dummy wafer) and process conditions at that time. The ROM 205 and the RAM 210 are examples of storage devices, and may be storage devices such as an EEPROM, an optical disk, a magneto-optical disk, and a hard disk.

  The CPU 215 controls the etching process for the product wafer and executes a dummy process for the non-product wafer when necessary. The bus 220 is a path for exchanging information between devices.

  The internal interface 225 inputs, for example, parameters (data) indicating operation conditions for dummy processing from the keyboard 705 and the touch panel 710 by an operator's operation, and outputs necessary information to the monitor 715 and the speaker 720. The external interface 230 transmits / receives data to / from the MES 100 and the MC 300.

(PM system hardware configuration)
As shown in FIG. 3, the PM 400 (corresponding to a substrate processing apparatus) has a first process ship 405, a second process ship 410, a transfer unit 415, an alignment mechanism 420, and a cassette stage 425.

The first process ship 405 includes a PM (Process Module) 1 that performs reactive ion etching (RIE) processing on a wafer using plasma. The second process ship 410 is arranged in parallel with the first process ship 405, and the COR (Chemical) is applied to the wafer subjected to the RIE process.
It has PM2 which performs an Oxide Removal (Pixel Removal) process and a PHT (Post Heat Treatment) process.

  The transfer unit 415 is a rectangular transfer chamber, and is connected to the first process ship 405 and the second process ship 410 via the gate valve 415a and the gate valve 415b. The transfer unit 415 is provided with a transfer arm 415c, and the wafers transferred while the units are kept airtight by opening and closing the gate valves 415a and 415b are transferred to the first process ship 405 or the transfer unit 415c using the transfer arm 415c. Transfer to the second process ship 410.

  At one end of the transfer unit 415, an alignment mechanism 420 for positioning the wafer W is provided. The alignment mechanism 420 aligns the position of the wafer W by detecting the peripheral state of the wafer W by the optical sensor 420b while rotating the turntable 420a with the wafer W placed thereon. .

  A cassette stage 425 is provided on the side wall of the transport unit 415, and three cassette containers 425 a 1 to 425 a 3 are placed on the cassette stage 425. Each cassette container 425a accommodates, for example, a maximum of 25 wafers W in multiple stages.

(Internal configuration and function of each PM)
Next, the internal configuration and function of each PM that performs the etching process will be described with reference to a longitudinal sectional view of PM1 (PM2) schematically shown in FIG.

  PM1 (PM2) has a rectangular tube-shaped processing container C in which a substantially central portion of the ceiling portion and a substantially central portion of the bottom portion are opened. The processing container C is made of, for example, aluminum whose surface is anodized.

  An upper electrode 450 is provided above the processing container. The upper electrode 450 is electrically separated from the processing container C by an insulating material 455 provided at the periphery of the opening provided at the upper part of the processing container C. A high frequency power supply 465 is connected to the upper electrode 450 via a matching circuit 460. The matching circuit 460 is provided with a matching box 470 around it, and serves as a grounding housing for the matching circuit 460.

  A processing gas supply unit 480 is also connected to the upper electrode 450 via a gas supply path 475, and a desired gas supplied from the processing gas supply unit 480 is supplied into the processing container C from the plurality of gas injection holes 495. To supply. In this manner, the upper electrode 450 functions as a gas shower head. The upper electrode 450 is provided with a temperature sensor 485. The temperature sensor 485 detects the temperature in the vicinity of the upper electrode 450 as the temperature in the processing container.

  A lower electrode 500 is provided below the processing container. The lower electrode 500 also functions as a susceptor on which the wafer W is placed. The lower electrode 500 is supported by a support 510 provided via an insulating material 505. Thus, the lower electrode 500 is electrically separated from the processing container C.

  One end of a bellows 515 is mounted near the outer periphery of the opening provided on the bottom surface of the processing container C. A lifting plate 520 is fixed to the other end of the bellows 515. With this configuration, the opening at the bottom of the processing container C is sealed by the bellows 515 and the lifting plate 520. Further, the lower electrode 500 moves up and down integrally with the bellows 515 and the lifting plate 520 in order to adjust the position where the wafer W is placed to a height corresponding to the processing process.

  An impedance adjustment unit 530 is connected to the lower electrode 500 via a conductive path 525, and an elevator plate 520 is further connected. The upper electrode 450 and the lower electrode 500 correspond to a cathode electrode and an anode electrode. With this configuration, the inside of the processing container is decompressed to a desired degree of vacuum by the exhaust mechanism 535, and the gas supplied into the processing container in a state where the substrate W is airtightly transferred into the processing container by opening and closing the gate valve 540. Is formed into plasma by the high frequency power applied, and the substrate W is subjected to desired etching by the action of the generated plasma.

(Functional structure of EC)
Next, each function of the EC 200 will be described with reference to FIG. The EC 200 includes a storage unit 250, an input unit 255, a lot continuous input instruction unit 260, a lot non-continuous input instruction unit 265, a determination unit 270, a dummy processing execution unit 275, a substrate processing execution unit 280, a communication unit 285, and an output unit 290. It has a function indicated by each block.

  The storage unit 250 stores one or more recipes used for processing a substrate (including a dummy substrate). That is, the storage unit 250 stores an etching processing recipe 250a showing a procedure for etching the substrate W and a dummy processing recipe 250b showing a procedure for dummy processing the dummy substrate. The input unit 255 inputs information such as parameters indicating operation conditions for dummy processing designated by the operator.

  The lot continuous input instructing unit 260 is composed of another product substrate group following the first lot in a state where the first lot (consisting of a product substrate group including the substrate W being etched) exists. Instructing continuous loading of the lot so that the second lot is processed continuously. For example, as shown in the upper part of FIG. 6, consider a case where 25 substrates W included in the lot A are currently transferred to PM1 in order and etched at PM1. When the operator requests the operation (processing) of the lot B while the lot A is in operation, the lot continuous input instruction unit 260 instructs the determination unit 270 to “continue lot input”. In a normal state where the factory is operating for 24 hours, this “continuous lot input” is instructed in most cases when a lot processing is requested.

  The lot non-continuous input instruction unit 265 instructs the non-continuous input of the lot so that one lot is processed discontinuously in the state where there is no lot consisting of the product substrate group including the substrate W being etched. . For example, as shown in the lower part of FIG. 6, if there is no substrate W transferred to PM1 and etched at this time (that is, when the apparatus is not in operation), the operator sets a new lot B. When the operation (processing) is requested, the lot non-continuous input instruction unit 265 instructs the determination unit 270 to “non-continuous input of lots” accordingly. For example, when “non-continuous lot input” is instructed, for example, when a lot is continuously stopped for PM maintenance and a new lot processing is requested after cleaning the PM, or when a disaster or some accident occurs. There is a case where a new lot is required to be processed when the atmosphere in the PM is in an unstable state because the PM has not been operated for a relatively long time.

  The determination unit 270 acquires information about the temperature for adjusting the atmosphere in the processing container, and determines whether or not the temperature state of the processing container C is adjusted based on the acquired temperature information. As an example of the information regarding the temperature for adjusting the atmosphere in the processing container, the actual temperature in the processing container detected by the temperature sensor 485 (here, the temperature of the upper electrode 450) can be cited. The temperature detected by the temperature sensor 485 is preferably the temperature in the vicinity of the upper electrode 450. For example, the temperature in the vicinity of the lower electrode 500, the temperature of the mounting table on which the substrate is mounted, the temperature of the side wall of the processing vessel, and the set temperature of the heater Any value that indicates the temperature state in the processing container may be used.

  As another example of the information on the temperature in the processing container, the set temperature T defined in the etching processing recipe 250a used for the etching processing of the substrate W to be performed in the future and the etching processing recipe used for the immediately preceding etching processing A set temperature Tod defined in 250a is exemplified.

  The dummy process execution unit 275 executes a dummy process on the dummy substrate in the processing container. More specifically, before executing the etching process on the product substrate, the dummy process execution unit 275 stores the process container in the dummy process recipe 250b in order to arrange the process container so as to match the process conditions. Based on the defined procedure, a predetermined process is executed for a dummy substrate which is a non-product.

  The substrate processing execution unit 280 executes predetermined processing (etching processing in this embodiment) on the substrate W in the processing container based on the procedure defined in the etching processing recipe 250a.

  When the communication unit 285 receives a command from the dummy processing execution unit 275, the communication unit 285 transmits a control signal for executing dummy processing to the MC 300 on the dummy substrate transferred to the PM in response to the command. The MC 300 transmits a drive signal corresponding to the control signal to each actuator in the PM, and each actuator operates according to the drive signal, so that the PM has process conditions in advance before performing the etching process on the product substrate. It is arranged to match the condition.

  Further, when receiving a command from the substrate processing execution unit 280, the communication unit 285 transmits a control signal for executing an etching process on the product substrate transferred to the PM to the MC 300 in response thereto. The MC 300 transmits a drive signal corresponding to the control signal to each actuator in the PM, and each actuator operates according to the drive signal, whereby the product substrate is etched in the PM. When a problem occurs during each process, the output unit 290 warns the operator by displaying the problem on the monitor 715 or outputs necessary information to the speaker 720 or the like.

  Each function of the EC 200 described above is actually executed by the CPU 215 executing a program describing a processing procedure for realizing these functions, or an IC (not shown) for realizing each function. This is achieved by controlling. For example, in this embodiment, each function of the lot continuous input instruction unit 260, the lot non-continuous input instruction unit 265, the determination unit 270, the dummy process execution unit 275, and the substrate process execution unit 280 is actually performed by the CPU 215. This is achieved by executing a program or recipe that describes the processing procedure for realizing the function.

(EC operation)
Next, the operation of lot processing (dummy determination / substrate processing) executed by the EC 200 will be described with reference to FIG. FIG. 7 is a flowchart (main routine) showing lot processing executed by the EC 200.

  Before starting this processing, the parameters indicating the dummy processing operating conditions are set to "Lot continuous input", "Lot non-continuous input", "Lot continuous / non-continuous input", "No setting" by the operator's operation. It is set to either. “Lot continuous charging” is selected by the operator when desiring to suppress dummy processing in response to lot continuous loading. "Lot non-continuous input" is selected by the operator when it is desired to execute dummy processing unconditionally prior to lot processing in response to when the lot is not continuously input (during non-continuous lot input) Is done. “Lot continuous / non-continuous input” is selected by the operator when desiring to suppress both dummy processing during continuous lot input and unconditional execution of dummy processing during non-continuous lot input. “No setting” is selected by an operator when desiring to execute a normal dummy process, or is set as a default value when nothing is selected by the operator.

(Lot processing)
When the operator turns on the lot start button, lot processing is started from step 700 in FIG. 7, the process proceeds to step 705, and the determination unit 270 determines whether or not the corresponding lot has been continuously input. If the lot continuous input instruction unit 260 has instructed lot continuous input, the determination unit 270 determines that the corresponding lot has been continuously input, and proceeds to step 710 to perform dummy determination / substrate processing ( 8) is executed, and the process proceeds to step 795 to end the present process.

  On the other hand, when the lot non-continuous input instruction unit 265 instructs the lot non-continuous input, the determination unit 270 determines that the corresponding lot has been input non-continuously, and proceeds to step 715 to execute a dummy at the time of lot non-continuous input. The determination / substrate process (see FIG. 12) is executed, and the process proceeds to step 795 to end the present process.

(Dummy judgment / Board processing: When lots are continuously charged)
The dummy determination / substrate processing at the time of continuous lot input called in step 710 will be described with reference to the flowchart of FIG. The dummy determination / substrate processing at the time of continuous lot introduction starts from step 800 in FIG. 8 and proceeds to step 805 where the determination unit 270 determines what is set for the dummy operation change parameter. When the dummy operation change parameter is set to “lot continuous input” or “lot continuous / non-continuous input”, the determination unit 270 determines that the operator desires to suppress the dummy process, and performs step 810. Proceed to

(Parameter: lot continuous input or lot continuous / non-continuous input)
Specifically, first, in step 810, the determination unit 270 stores the actual temperature Tsen in the processing container detected by the temperature sensor 485 in the PM actual temperature Tp, and proceeds to step 815 to perform the PM actual temperature Tp. And whether or not the absolute value of the difference between the set temperature (recipe temperature Tr) defined in the etching process recipe 250a used for the corresponding lot (the substrate to be processed) is equal to or lower than a predetermined interlock Tsh1 ( Corresponds to the third determination condition).

  When the absolute value of the difference between the PM actual temperature Tp and the recipe temperature Tr is equal to or lower than the interlock Tsh1, the determination unit 270 is stable in a state suitable for the etching process, so that the dummy process is unnecessary. Determine and proceed to step 820. After performing the etching process on the substrate belonging to the corresponding lot, the substrate processing execution unit 280 proceeds to step 825, stores the recipe temperature Tr in the immediately preceding recipe temperature Trold, proceeds to step 895, and ends this processing.

  On the other hand, if the absolute value of the difference between the PM actual temperature Tp and the recipe temperature Tr is larger than the interlock Tsh1, the determination unit 270 needs a dummy process because the inside of the processing container is not stable in a temperature state suitable for the etching process. The process proceeds to step 830. The dummy process execution unit 275 performs a dummy process on the dummy substrate, and the substrate process execution unit 280 proceeds to step 825 after performing the etching process on the substrate belonging to the corresponding lot, and sets the recipe temperature Tr to the previous recipe. The process is stored at the temperature Trold, and the process proceeds to step 895 to end the present process.

(Parameter: No setting or batch non-continuous input)
In the above, the determination of the dummy process when the dummy operation change parameter is set to “lot continuous input” or “lot continuous / non-continuous input” in step 805 has been described. Next, determination of dummy processing when the dummy operation change parameter is set to “no setting” or “lot non-continuous input” in step 805 will be described.

  If it is determined in step 805 that the dummy operation change parameter is set to “no setting” or “non-continuous lot input”, the determination unit 270 proceeds to step 835 and sets the substrate processed immediately before. It is determined whether or not the absolute value of the difference between the set temperature Trold of the used recipe and the set temperature Tr of the recipe of the substrate to be processed next is equal to or lower than a predetermined interlock Tsh2 (the first determination condition is satisfied). Equivalent).

  FIG. 9 is an example of an etching process recipe A used for the immediately preceding lot process, and FIG. 10 is an example of an etching process recipe B that will be used for a lot process. Here, the interlock Tsh2 is 5 ° C., the set temperature of the etching process recipe A (upper electrode temperature (electrode)) is 80 ° C., and the set temperature of the etching process recipe B (upper electrode temperature (electrode)) is also 80 ° C.

  In this case, since the difference between the set temperature of the etching process recipe A and the set temperature of the etching process recipe B is equal to or less than the interlock Tsh2, the determination unit 270 determines “YES” in step 835, and then proceeds to step 840. Then, the average value Pave of the upper RF power (for example, the upper RF power of the recipe shown in FIG. 9) of one or more recipes used for the lot (a plurality of substrates) processed immediately before is processed next. It is determined whether or not there is a difference between the set RF power Pr of the substrate recipe (for example, the upper RF power of the recipe shown in FIG. 10) (corresponding to the second determination condition).

  When all of the substrates belonging to the lot use the etching process recipe A, the average value Pave of the immediately preceding recipe upper RF power is “1000 W” as shown in FIG. Further, the upper RF power Pr of the recipe to be used is “900 W” as shown in FIG. In this case, the determination unit 270 determines that the dummy process is necessary because the state in the processing container is not adjusted, and the process proceeds to step 830. After the dummy processing execution unit 275 performs the dummy processing, the process proceeds to step 820, where the substrate processing execution unit 280 performs etching processing on the substrate, and then proceeds to step 825, where the recipe temperature Tr (upper electrode temperature (electrode)) shown in FIG. 80 ° C. is stored in the immediately preceding recipe temperature Trold, the process proceeds to step 895, and this process is terminated.

  On the other hand, while the set temperature Trold (upper electrode temperature (electrode)) of the etching process recipe A in FIG. 9 is 80 ° C., as shown in FIG. 11, the set temperature Tr of the etching process recipe B When (the upper electrode temperature (electrode)) is 74 ° C., the difference between the set temperature of the etching process recipe A and the set temperature of the etching process recipe B is larger than the interlock Tsh2 (= 5 ° C.). Therefore, in this case, the determination unit 270 determines that the dummy process is necessary, determines “NO” in step 835, immediately proceeds to step 830, where the dummy process is performed, and then step 820. In step 825, the recipe temperature Tr is stored in the immediately preceding recipe temperature Trold, and the flow advances to step 895 to end the present process.

Furthermore, the absolute value of the difference between the set temperature Trold of the recipe used for the previous lot process and the set temperature Tr of the recipe used for the lot process is equal to or less than the interlock Tsh2 (= 5 ° C.) (that is, the first determination condition) If the average value Pave of the previous recipe upper RF power is equal to the upper RF power Pr of the recipe to be used (that is, when the second determination condition is satisfied), the determination unit 270 Proceed to 810. Then, in step 815 following step 810, the determination unit 270 calculates the PM actual temperature Tp and the set temperature (recipe temperature Tr) defined in the etching process recipe 250a used for the corresponding lot (substrate to be processed). If it is determined that the absolute value of the difference is equal to or less than the predetermined interlock Tsh1 (that is, the third determination condition is satisfied), the determination unit 270 determines that the dummy process is unnecessary, and in step 815 If it is determined that the third determination condition is not satisfied, it is determined that dummy processing is necessary, and necessary processing (step 820, step 825, step 830) is performed, and then this processing ends.

  As described above, according to the dummy determination / substrate processing at the time of lot continuous input according to the present embodiment, at least one of the first determination condition, the second determination condition, and the third determination condition according to the parameter. Whether or not dummy processing is executed is determined. If it is determined that the predetermined determination condition is satisfied, it is determined that the inside of the processing container is stable to the extent that the product substrate can be processed, and the etching process is performed immediately without performing the dummy process. Is done. As a result, wasteful consumption of energy such as high-frequency power, gas, and dummy substrate consumed for dummy processing can be suppressed, and the time spent for dummy processing can be used for product substrate processing. can do. As a result, it is possible to dramatically improve product productivity by improving throughput while saving energy.

  In addition, the value calculated from the set power of the recipe used for the processing of the previous product substrate is not limited to the average value of the set power of the plurality of recipes used for the plurality of substrates belonging to the lot processed immediately before, For example, it may be the set power of the recipe used for the substrate processed most recently.

(Dummy judgment / Board processing: When lots are continuously charged)
Next, the dummy determination / substrate processing at the time of discontinuous lot input called in step 715 will be described with reference to the flowchart of FIG. The dummy determination / substrate processing at the time of lot non-continuous input starts from step 1200 in FIG. 12 and proceeds to step 805 where the determination unit 270 determines what is set for the dummy operation change parameter. .

(Parameter: Lot non-continuous input or lot continuous / non-continuous input)
If the dummy operation change parameter is set to “lot non-continuous input” or “lot continuous / non-continuous input”, the determination unit 270 determines that the operator wants to execute the dummy process unconditionally. Then, the process proceeds to step 830.

  In this case, even if the upper electrode temperature Tr of the recipe used for the future processing is equal to the detected temperature Tsen, or the upper electrode temperature Tr of the recipe used for the future processing (see the recipe B for etching processing in FIG. 10) is just before. Even if it is equal to the upper electrode temperature Trold (see the etching process recipe A in FIG. 13) of the recipe used in this process, the dummy process execution unit 275 performs the dummy process on the dummy substrate in step 830. In step 820, the substrate processing execution unit 280 performs etching processing on the substrate belonging to the corresponding lot, and then proceeds to step 825 to store the recipe temperature Tr as the immediately preceding recipe temperature Trold and proceeds to step 1295. This process is terminated.

(Parameter: No setting or lot continuous input)
On the other hand, when the dummy operation change parameter is set to “No setting” or “Lot continuous” in Step 805, the determination unit 270 determines whether or not the third determination condition is satisfied in Step 815 following Step 810. Determine. If it is determined in step 815 that the third determination condition is not satisfied, it is determined that dummy processing is necessary, and after dummy processing is performed in step 830 and etching processing is performed in step 820 The process proceeds to step 825, where the recipe temperature Tr is stored in the immediately preceding recipe temperature Trold, and the process proceeds to step 895 to end the present process.

  On the other hand, if it is determined in step 815 that the third determination condition is satisfied, the determination unit 270 proceeds to step 1205, and the absolute value of the difference between the immediately preceding recipe temperature Trold and the recipe temperature Tr is determined as the interface. It is determined whether or not it is within the range of the lock Tsh2 (whether or not the third determination condition is satisfied).

  If the absolute value of the difference between the immediately preceding recipe temperature Trold and the recipe temperature Tr is within the range of the interlock Tsh2, the determination unit 270 determines that the dummy process is unnecessary and proceeds to step 820. The substrate processing execution unit 280 executes substrate etching processing at step 820, stores the recipe temperature Tr at the immediately preceding recipe temperature Trold at step 825, proceeds to step 1295, and ends this processing.

  On the other hand, if the absolute value of the difference between the immediately preceding recipe temperature Trold and the recipe temperature Tr is greater than the interlock Tsh2 in step 1205, the determination unit 270 determines that dummy processing is necessary and proceeds to step 830. After the dummy process is executed in step 830 and the etching process is executed in step 820, the process proceeds to step 825, the recipe temperature Tr is stored in the immediately preceding recipe temperature Trold, the process proceeds to step 1295, and this process ends.

  When lot processing is performed discontinuously, it is considered that a relatively long time has elapsed from the processing time of the lot (product substrate) processed immediately before to the processing time of the next processed lot. For example, this is a case where a lot is inserted after maintenance of the substrate processing apparatus. In such a case, the state in the processing container has collapsed and is not stable. For this reason, it is necessary to prepare the state in the processing container before processing the product substrate. In particular, the temperature conditions need to be controlled in advance for the reasons described above.

  On the other hand, as described above, according to the dummy determination / substrate processing at the time of non-continuous lot input according to the present embodiment, when the parameter specifies the processing at the time of non-continuous lot input (ie, If the parameter is “Lot non-continuous input” or “Lot continuous / non-continuous input”), dummy processing is executed unconditionally. As a result, the atmosphere in the processing container can be surely adjusted to a stable state before processing the product substrate.

  In the dummy determination / substrate processing (when lots are continuously input) in FIG. 8, the first determination condition is determined in step 835, the second determination condition is determined in step 840, and the third determination is performed in step 815. The condition has been determined. Further, in the dummy determination / substrate processing (when lots are not consecutively charged) in FIG. 12, the first determination condition is determined in step 1205, and the third determination condition is determined in step 815.

  As described above, the determination unit 270 may perform the determination based on the second determination condition or the condition including the second determination condition only when the lot continuous input instruction unit 260 is instructed to input the lot continuously. .

  In addition, the determination unit 270 indicates that lots are continuously input by the lot continuous input instruction unit 260, and the case where the lot continuous input is not specified as a parameter as an operation condition of the dummy processing (that is, “no setting” for the parameter). (If “non-continuous lot input” is set), the first determination condition is determined in step 835 in FIG. 8, the second determination condition is determined in step 840, and the third determination condition is determined in step 815. It may be determined whether or not the temperature state of the processing container C is adjusted without determining the determination condition.

(Variation 1 of the substrate processing apparatus)
The substrate processing apparatus is not limited to the PM 400 shown in FIG. 3, and may have the configuration shown in the PM 400u of FIG. The PM 400u includes a cassette chamber (C / C) 400u1, 400u2, a transfer chamber (T / C) 400u3, a pre-alignment (P / A) 400u4, and a process chamber (P / C) (= PM) 400u5, 400u6. Has been.

  In the cassette chambers 400u1 and 400u2, the unprocessed product substrate (wafer W) and the processed product substrate are accommodated, and for example, three non-product substrates for dummy processing are accommodated in the lowermost stage of the cassette. . The pre-alignment 400u4 positions the wafer W.

  The transfer chamber 400u3 is provided with an articulated arm 400u31 that can bend and stretch and turn. The arm 400u31 holds the wafer W on a fork 400u32 provided at the tip of the arm 400u31, and holds the wafer W between the cassette chambers 400u1, 400u2, the pre-alignment 400u4, and the process chambers 400u5, 400u6 while appropriately bending and stretching. It is designed to be transported.

  Even in the PM 400u having such a configuration, it is determined whether or not dummy processing is performed before a process such as etching processing is performed on the wafer in the process chambers 400u5 and 400u6 as described above. If unnecessary, the wafer W is loaded into the process chambers 400u5 and 400u6 without executing dummy processing, and the actual process is executed. In addition, when lots are input discontinuously, dummy processing is always performed before a process such as etching processing is performed on the wafer W in the process chambers 400u5 and 400u6.

(Modification 2 of the substrate processing apparatus)
Further, the substrate processing apparatus may have the configuration shown in PM400t of FIG. The PM 400t includes a transfer system H that transfers the wafer W and a processing system S that performs substrate processing such as film formation or etching on the wafer W. The transfer system H and the processing system S are connected via load lock chambers (LLM) 400t1 and 400t2.

  The transfer system H includes a cassette stage 400H1 and a transfer stage 400H2. The cassette stage 400H1 is provided with a container mounting table H1a, and four cassette containers H1b1 to H1b4 are mounted on the container mounting table H1a. Each cassette container H1b can accommodate a product substrate (wafer W) before processing, a processed product substrate, and a non-product substrate for dummy processing in multiple stages.

  On the transfer stage 420, two transfer arms H2a1 and H2a2 capable of bending and extending and turning are supported so as to slide and move by magnetic drive. The transfer arms H2a1 and H2a2 hold the wafer W on a fork attached to the tip.

  At one end of the transfer stage 400H2, a positioning mechanism H2b for positioning the wafer W is provided. The alignment mechanism H2b aligns the position of the wafer W by detecting the peripheral state of the wafer W using the optical sensor H2b2 while rotating the turntable H2b1 while the wafer W is mounted. .

  The load lock chambers 400t1 and 400t2 are each provided with a mounting table for mounting the wafer W therein, and gate valves t1a, t1b, t1c, and t1d that can be opened and closed airtight at both ends. It has been. With this configuration, the transfer system H transfers the wafer W among the cassette containers H1b1 to H1b3, the load lock chambers 400t1 and 400t2, and the alignment mechanism H2b.

  The processing system S is provided with a transfer chamber (T / C) 400t3 and six process chambers (P / C) 400s1 to 400s6 (= PM1 to PM6). The transfer chamber 400t3 is joined to the process chambers 400s1 to 400s6 via gate valves s1a to s1f that can be opened and closed in an airtight manner. The transfer chamber 400t3 is provided with an arm Sa that can be bent and stretched.

  With this configuration, the processing system uses the arm Sa to transfer the wafer W from the load lock chambers 400t1 and 400t2 to the process chambers 400s1 to 400s6 via the transfer chamber 400t3, and performs processes such as etching on the wafer W. After being applied, it is again carried out to the load lock chambers 400t1 and 400t2 via the transfer chamber 400t3.

  Even in the PM 400t having such a configuration, it is determined whether or not dummy processing is performed before a process such as etching processing is performed on the wafer in the process chambers 400s1 to 400s6 as described above. If unnecessary, the wafer W is loaded into the process chambers 400s1 to 400s6 without executing dummy processing, and the actual process is executed. In addition, when lots are loaded discontinuously, dummy processing is always performed before a process such as etching processing is performed on the wafer W in the process chambers 400s1 to 400s6.

  In the above embodiment, the operations of the respective units are related to each other, and can be replaced as a series of operations in consideration of the relationship between each other. And by replacing in this way, an embodiment of an apparatus for controlling a substrate processing apparatus can be made an embodiment of a method for controlling a substrate processing apparatus.

  In addition, an embodiment of a program for controlling the substrate processing apparatus can be obtained by replacing the operation of each part of the control apparatus with the process of each part. Further, by storing the control program of the substrate processing apparatus in a computer-readable recording medium, the embodiment of the control program can be made an embodiment of a computer-readable recording medium recorded in the control program.

  As mentioned above, although preferred embodiment of this invention was described referring an accompanying drawing, it cannot be overemphasized that this invention is not limited to the example which concerns. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the claims, and these are naturally within the technical scope of the present invention. Understood.

  For example, regardless of the type of the substrate processing apparatus according to the present invention, it may be a capacitively coupled plasma processing apparatus, an inductively coupled plasma processing apparatus, or a microwave plasma processing apparatus. Further, the substrate processing apparatus according to the present invention may be an apparatus for processing a large glass substrate or an apparatus for processing a normal wafer size substrate.

  Further, the substrate processing apparatus according to the present invention is not limited to the film forming process or the etching process, and can perform all kinds of substrate processing such as thermal diffusion processing, ashing processing, and sputtering processing.

  Further, the function of the control device according to the present invention can be achieved by at least one of EC 200 and MC 300.

It is a figure showing a substrate processing system concerning one embodiment of the present invention. 1 is a hardware configuration diagram of an EC according to an embodiment of the present invention. It is a hardware block diagram of PM concerning one Embodiment of this invention. It is a longitudinal cross-sectional view of PM concerning one Embodiment of this invention. It is a functional block diagram of EC concerning one Embodiment of this invention. It is a figure for demonstrating the continuous input of the lot concerning one Embodiment of this invention, and the non-continuous input of a lot. It is the flowchart which showed the lot processing routine performed in one Embodiment of this invention. It is the flowchart which showed the dummy determination / board | substrate process routine (at the time of lot continuous injection) performed in one Embodiment of this invention. It is the figure which showed an example of the recipe A used immediately before one Embodiment of this invention. It is the figure which showed an example of the recipe B used from now on concerning one Embodiment of this invention. It is the figure which showed another example of the recipe B used from now on concerning one Embodiment of this invention. It is the flowchart which showed the dummy determination / board | substrate process routine (at the time of lot discontinuous injection | throwing-in) performed in one Embodiment of this invention. It is the figure which showed another example of the recipe B used from now on concerning one Embodiment of this invention. It is a longitudinal cross-sectional view of other PM concerning one Embodiment of this invention. It is a longitudinal cross-sectional view of other PM concerning one Embodiment of this invention.

Explanation of symbols

10 Substrate processing system 100 MES
200 EC
250 Storage Unit 250a Etching Process Recipe 250b Dummy Process Recipe 255 Input Unit 260 Lot Continuous Input Instruction Unit 265 Lot Non-Continuous Input Instruction Unit 270 Judgment Unit 275 Dummy Process Execution Unit 280 Substrate Process Execution Unit 285 Communication Unit 290 Output Unit 300 MC
400 PM
425 Cassette stage 450 Upper electrode 485 Temperature sensor 500 Lower electrode

Claims (11)

A control device that controls a substrate processing apparatus by including a substrate processing execution unit that executes predetermined processing on a product substrate and a dummy processing execution unit that executes dummy processing on a non-product substrate,
A storage unit for storing one or more recipes used for substrate processing;
Information on the temperature for adjusting the atmosphere in the processing container provided in the substrate processing apparatus is acquired from the recipe stored in the storage unit, and the temperature state in the processing container is adjusted based on the acquired temperature information. A determination unit for determining whether or not
The substrate processing execution unit
When it is determined by the determination unit that the temperature state of the processing container is adjusted, a predetermined process is performed on the product substrate without causing the dummy process execution unit to execute the dummy process ,
Furthermore, a lot non-continuous input instruction unit that instructs non-continuous input of lots so that processing for one lot is executed non-continuously in the state where there is no product substrate group including product substrates being processed. With
The dummy process execution unit
When the lot non-continuous input instruction unit instructs the non-continuous input of the lot, the predetermined processing is performed on the product substrates of the non-continuous input lots without causing the determination unit to execute the determination. A control apparatus for a substrate processing apparatus that performs a dummy process on a non-product substrate before being executed . The determination unit
By comparing the set temperature of the recipe used for the processing of the previous product substrate among the recipes stored in the storage unit and the set temperature of the recipe used for the processing of the next product substrate as a first determination condition, The control apparatus for a substrate processing apparatus according to claim 1, wherein it is determined whether or not a temperature state of the processing container is adjusted. The determination unit
In addition to the first determination condition, the value calculated from the set power of the recipe used for processing the previous product substrate and the set power of the recipe used for processing the next product substrate are used as the second determination condition. The control device for a substrate processing apparatus according to claim 2, wherein it is determined by comparison whether or not the temperature state of the processing container is adjusted. The substrate processing apparatus includes a temperature sensor that detects a temperature in the processing container,
The determination unit
By acquiring the temperature in the processing container detected by the temperature sensor and comparing the acquired temperature in the processing container and the set temperature of the recipe used for processing the next product substrate as a third determination condition 4. The control device for a substrate processing apparatus according to claim 1, wherein it is determined whether or not the temperature state of the processing container is adjusted. The determination unit
  Depending on the parameter that indicates the operation condition of the specified dummy process,
A first determination condition for comparing a set temperature of a recipe used for processing the immediately preceding product substrate and a set temperature of a recipe used for processing the next product substrate among the recipes stored in the storage unit;
  In addition to the first determination condition, a second determination for comparing the value calculated from the set power of the recipe used for processing the previous product substrate and the set power of the recipe used for processing the next product substrate. Conditions, and
  Three judgment conditions comprising a third judgment condition for comparing the temperature in the processing container detected by the temperature sensor for detecting the temperature in the processing container and the set temperature of the recipe used for processing the next product substrate. The control apparatus of the substrate processing apparatus described in any one of Claims 1-4 which determines whether the temperature state of the said process container is prepared based on at least one of these. The determination unit
  When the lot continuous input instructing unit is instructed to continuously input lots, and the time when the lots are continuously input is specified as the dummy processing operation condition in the parameter, the temperature condition of the processing container is adjusted by the third determination condition. The control apparatus for a substrate processing apparatus according to claim 5, wherein it is determined whether or not the process is performed. The determination unit
  When the lot continuous input instruction unit instructs the continuous lot input, and the lot continuous input time is not specified in the parameter as the operation condition of the dummy process, the first determination condition and the second determination condition The control apparatus for a substrate processing apparatus according to claim 5, wherein it is determined whether or not the temperature state of the processing container is adjusted. The determination unit
  When the lot continuous input instructing unit is instructed to sequentially input lots, and when the lot continuous input is not specified as the dummy processing operation condition in the parameter, the first determination condition, the second determination condition, and the The control apparatus for a substrate processing apparatus according to claim 5, wherein it is determined whether or not the temperature state of the processing container is adjusted according to a third determination condition. The dummy process execution unit
  If the lot non-continuous input instruction is instructed by the lot non-continuous input instruction unit, and when the lot non-continuous input is specified in the parameter as the operation condition of the dummy process, the determination unit does not execute the determination, The control apparatus for a substrate processing apparatus according to claim 5, wherein a dummy process is performed on the non-product substrate before the predetermined process is performed on the non-continuously supplied product substrates. The dummy process execution unit
  When the lot non-continuous input instruction unit is instructed to input non-continuous lots, and when the lot non-continuous input is not designated as the dummy processing operation condition in the parameter, the first determination condition and the third determination The control apparatus for a substrate processing apparatus according to claim 5, wherein it is determined whether or not the temperature state of the processing container is adjusted according to conditions. A method of controlling a substrate processing apparatus that performs predetermined processing on a product substrate,
  Obtaining information about the temperature for adjusting the atmosphere in the processing container;
  It is determined whether the temperature state in the processing container is arranged based on the acquired temperature information,
  When it is determined that the temperature state of the processing container is adjusted, the predetermined processing is performed on the product substrate without performing the dummy processing on the non-product substrate,
  In addition, when there is no lot consisting of a product substrate group including the product substrate being processed, and the non-continuous input of the lot is instructed so that the processing for one lot is executed discontinuously, the above determination is made. A control method for a substrate processing apparatus, wherein a dummy process is performed on a non-product substrate before the predetermined process is performed on the product substrates of the lots that are discontinuously charged without being executed.

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