KR100882221B1 - 기판 처리 장치의 제어 장치, 기판 처리 장치의 제어 방법및 기판 처리 장치의 제어 프로그램을 기억한 기록 매체 - Google Patents

기판 처리 장치의 제어 장치, 기판 처리 장치의 제어 방법및 기판 처리 장치의 제어 프로그램을 기억한 기록 매체 Download PDF

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KR100882221B1
KR100882221B1 KR1020070031063A KR20070031063A KR100882221B1 KR 100882221 B1 KR100882221 B1 KR 100882221B1 KR 1020070031063 A KR1020070031063 A KR 1020070031063A KR 20070031063 A KR20070031063 A KR 20070031063A KR 100882221 B1 KR100882221 B1 KR 100882221B1
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South Korea
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substrate
processing
lot
temperature
dummy
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Korean (ko)
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KR20070098685A (ko
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다케시 요코우치
후미코 야기
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring

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  • Drying Of Semiconductors (AREA)
KR1020070031063A 2006-03-29 2007-03-29 기판 처리 장치의 제어 장치, 기판 처리 장치의 제어 방법및 기판 처리 장치의 제어 프로그램을 기억한 기록 매체 Active KR100882221B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00091102 2006-03-29
JP2006091102A JP5128080B2 (ja) 2006-03-29 2006-03-29 基板処理装置の制御装置およびその制御方法

Publications (2)

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KR20070098685A KR20070098685A (ko) 2007-10-05
KR100882221B1 true KR100882221B1 (ko) 2009-02-06

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KR1020070031063A Active KR100882221B1 (ko) 2006-03-29 2007-03-29 기판 처리 장치의 제어 장치, 기판 처리 장치의 제어 방법및 기판 처리 장치의 제어 프로그램을 기억한 기록 매체

Country Status (4)

Country Link
JP (1) JP5128080B2 (https=)
KR (1) KR100882221B1 (https=)
CN (1) CN101046691B (https=)
TW (1) TWI409850B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008288282A (ja) * 2007-05-15 2008-11-27 Hitachi Kokusai Electric Inc 基板処理装置
JP5463066B2 (ja) 2009-04-30 2014-04-09 東京エレクトロン株式会社 ロット処理開始判定方法及び制御装置
TWI524388B (zh) * 2013-12-27 2016-03-01 日立國際電氣股份有限公司 A substrate processing apparatus, a manufacturing method of a semiconductor device, and a recording medium
JP6501601B2 (ja) 2014-05-20 2019-04-17 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理プログラム
US12074044B2 (en) * 2018-11-14 2024-08-27 Cyberoptics Corporation Wafer-like sensor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10233387A (ja) 1996-12-17 1998-09-02 Denso Corp 半導体のドライエッチング方法
KR19980068383A (ko) * 1997-02-19 1998-10-15 김광호 더미 로트 플로우 제어방법
KR20040025288A (ko) * 2002-09-19 2004-03-24 삼성전자주식회사 시즈닝 레서피의 최적화 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2511288B2 (ja) * 1988-03-14 1996-06-26 富士通株式会社 半導体装置の熱処理方法
US5925212A (en) * 1995-09-05 1999-07-20 Applied Materials, Inc. Apparatus and method for attaining repeatable temperature versus time profiles for plasma heated interactive parts used in mass production plasma processing
JPH11288990A (ja) * 1998-04-01 1999-10-19 Hitachi Ltd プロセス処理方法およびその装置並びに半導体製造ラインおよびそれにおける被処理基板の搬送方法
JP3660582B2 (ja) * 2000-12-04 2005-06-15 株式会社日立製作所 プラズマエッチング処理装置
JP4334817B2 (ja) * 2002-05-15 2009-09-30 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP4673548B2 (ja) * 2003-11-12 2011-04-20 東京エレクトロン株式会社 基板処理装置及びその制御方法
US20050233477A1 (en) * 2004-03-05 2005-10-20 Tokyo Electron Limited Substrate processing apparatus, substrate processing method, and program for implementing the method
CN100373545C (zh) * 2004-03-05 2008-03-05 东京毅力科创株式会社 基板处理装置、基板处理方法及程序

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10233387A (ja) 1996-12-17 1998-09-02 Denso Corp 半導体のドライエッチング方法
KR19980068383A (ko) * 1997-02-19 1998-10-15 김광호 더미 로트 플로우 제어방법
KR20040025288A (ko) * 2002-09-19 2004-03-24 삼성전자주식회사 시즈닝 레서피의 최적화 방법

Also Published As

Publication number Publication date
KR20070098685A (ko) 2007-10-05
CN101046691A (zh) 2007-10-03
TWI409850B (zh) 2013-09-21
CN101046691B (zh) 2010-09-29
JP5128080B2 (ja) 2013-01-23
TW200746244A (en) 2007-12-16
JP2007266410A (ja) 2007-10-11

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