TWI403575B - 在線鋸期間用於增進乾燥之組合物 - Google Patents

在線鋸期間用於增進乾燥之組合物 Download PDF

Info

Publication number
TWI403575B
TWI403575B TW98143965A TW98143965A TWI403575B TW I403575 B TWI403575 B TW I403575B TW 98143965 A TW98143965 A TW 98143965A TW 98143965 A TW98143965 A TW 98143965A TW I403575 B TWI403575 B TW I403575B
Authority
TW
Taiwan
Prior art keywords
composition
weight
liquid carrier
substrate
abrasive
Prior art date
Application number
TW98143965A
Other languages
English (en)
Chinese (zh)
Other versions
TW201033342A (en
Inventor
奈文 納古
史帝芬 葛倫拜
凱文 摩根伯格
Original Assignee
卡博特微電子公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 卡博特微電子公司 filed Critical 卡博特微電子公司
Publication of TW201033342A publication Critical patent/TW201033342A/zh
Application granted granted Critical
Publication of TWI403575B publication Critical patent/TWI403575B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/007—Use, recovery or regeneration of abrasive mediums
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/04—Processes
    • Y10T83/0405—With preparatory or simultaneous ancillary treatment of work
    • Y10T83/0443—By fluid application

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW98143965A 2008-12-20 2009-12-21 在線鋸期間用於增進乾燥之組合物 TWI403575B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US20314608P 2008-12-20 2008-12-20

Publications (2)

Publication Number Publication Date
TW201033342A TW201033342A (en) 2010-09-16
TWI403575B true TWI403575B (zh) 2013-08-01

Family

ID=42269291

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98143965A TWI403575B (zh) 2008-12-20 2009-12-21 在線鋸期間用於增進乾燥之組合物

Country Status (10)

Country Link
US (1) US8597538B2 (OSRAM)
EP (1) EP2377146A2 (OSRAM)
JP (1) JP5600117B2 (OSRAM)
KR (1) KR20110104066A (OSRAM)
CN (1) CN102257602A (OSRAM)
IL (1) IL213232A0 (OSRAM)
MY (1) MY152029A (OSRAM)
SG (1) SG172288A1 (OSRAM)
TW (1) TWI403575B (OSRAM)
WO (1) WO2010071870A2 (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112011100688T5 (de) * 2010-02-26 2013-02-28 Sumco Corporation Verfahren zum Herstellen eines Halbleiterwafers
JP6039935B2 (ja) * 2012-06-29 2016-12-07 出光興産株式会社 水性加工液
KR102040050B1 (ko) * 2013-08-02 2019-11-05 동우 화인켐 주식회사 웨이퍼 다이싱용 세정제 조성물
CN104194647B (zh) * 2014-09-02 2016-04-06 蓝思科技股份有限公司 一种加工蓝宝石专用钻石研磨液和研磨膏及它们的制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4468339A (en) * 1982-01-21 1984-08-28 The Lubrizol Corporation Aqueous compositions containing overbased materials
TW200619371A (en) * 2004-09-30 2006-06-16 Kyodo Yushi An aqueous cutting oil solution, a slurry containing the same and a method for cutting brittle materials
US20080057833A1 (en) * 2006-08-30 2008-03-06 Saint-Gobain Ceramics & Plastics, Inc. Aqueous fluid compositions for abrasive slurries, methods of production, and methods of use thereof

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60141795A (ja) * 1983-12-29 1985-07-26 Sanyo Chem Ind Ltd 難削材用の切削・研削油剤
JP2894566B2 (ja) * 1989-12-08 1999-05-24 ユシロ化学工業株式会社 切断加工用油剤
JP3347278B2 (ja) * 1997-10-08 2002-11-20 ユシロ化学工業株式会社 難燃性潤滑油組成物ならびにこれを用いた切削液および切断方法
JP2000327838A (ja) * 1999-05-18 2000-11-28 Super Silicon Kenkyusho:Kk ワイヤソー又はバンドソー用水性研削液
JP2001164240A (ja) * 1999-12-06 2001-06-19 Ishii Hyoki Corp 水性切削液
JP2001303027A (ja) * 2000-04-26 2001-10-31 Seimi Chem Co Ltd 研磨用組成物及び研磨方法
JP2004051756A (ja) * 2002-07-19 2004-02-19 Sanyo Chem Ind Ltd Ｃｍｐプロセス用研磨組成物
JP4345357B2 (ja) * 2003-05-27 2009-10-14 株式会社Ｓｕｍｃｏ 半導体ウェーハの製造方法
JP2005034986A (ja) * 2003-06-27 2005-02-10 Showa Denko Kk 研磨用組成物とそれを用いた基板研磨方法
JP2005193332A (ja) * 2004-01-07 2005-07-21 Tokyo Seiko Co Ltd ソーワイヤ
EP2020680A4 (en) * 2006-04-24 2011-09-21 Hitachi Chemical Co Ltd POLISHING LIQUID FOR CMP AND POLISHING METHOD
JP5081435B2 (ja) * 2006-11-22 2012-11-28 出光興産株式会社 一方向クラッチ内臓型回転伝達装置用グリース
WO2008105342A1 (ja) * 2007-02-27 2008-09-04 Hitachi Chemical Co., Ltd. 金属用研磨液及び研磨方法
JP2008103690A (ja) * 2007-08-24 2008-05-01 Mitsubishi Electric Corp シリコンインゴット切断用スラリー

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4468339A (en) * 1982-01-21 1984-08-28 The Lubrizol Corporation Aqueous compositions containing overbased materials
US4468339B1 (en) * 1982-01-21 1989-05-16 Aqueous compositions containing overbased materials
TW200619371A (en) * 2004-09-30 2006-06-16 Kyodo Yushi An aqueous cutting oil solution, a slurry containing the same and a method for cutting brittle materials
US20080057833A1 (en) * 2006-08-30 2008-03-06 Saint-Gobain Ceramics & Plastics, Inc. Aqueous fluid compositions for abrasive slurries, methods of production, and methods of use thereof

Also Published As

Publication number Publication date
CN102257602A (zh) 2011-11-23
JP5600117B2 (ja) 2014-10-01
TW201033342A (en) 2010-09-16
WO2010071870A3 (en) 2010-09-10
US20110239836A1 (en) 2011-10-06
WO2010071870A2 (en) 2010-06-24
KR20110104066A (ko) 2011-09-21
SG172288A1 (en) 2011-07-28
MY152029A (en) 2014-08-15
JP2012512757A (ja) 2012-06-07
EP2377146A2 (en) 2011-10-19
IL213232A0 (en) 2011-07-31
US8597538B2 (en) 2013-12-03

Similar Documents

Publication Publication Date Title
JP5571795B2 (ja) ダイヤモンドワイヤーソーと共に使用する水性切削液
KR101371870B1 (ko) 수용성 산화제를 이용한 탄화규소 연마 방법
JP5468903B2 (ja) Ｌｏｗ−ｋ誘電体材料のｃｍｐ用組成物及び方法
CN102257092B (zh) 含有非离子型聚合物的浆料组合物及使用方法
CN102257091B (zh) 用于线锯切割的切割流体组合物
CN103391992B (zh) 固结磨料线锯用水溶性加工液
CN104955929A (zh) 水性切削液组合物
KR102307254B1 (ko) 질화티타늄 및 티타늄/질화티타늄 제거를 억제하기 위한 cmp 방법
CN105754559A (zh) 用于磨料浆料的含水液体组合物
JP5600117B2 (ja) ワイヤーソー切断の間の乾燥性を向上させるための組成物
EP3484971B1 (en) Alternative oxidizing agents for cobalt chemical-mechanical polishing
EP2488617B1 (en) Cutting slurries comprising polyalkylene glycol-grafted polycarboxylate suspension and dispersing agent
KR20120056196A (ko) 웨이퍼 절삭용 환경 친화적 수용성 절삭유 및 이를 포함한 수용성 웨이퍼 절삭액 조성물
TWI791633B (zh) 抗腐蝕拋光組成物
KR101751323B1 (ko) 웨이퍼 절삭용 환경 친화적 수용성 절삭유 및 이를 포함한 수용성 웨이퍼 절삭액 조성물
JP5750525B2 (ja) 固定砥粒ワイヤソー用水溶性加工液
JPH08295875A (ja) スライシング用研磨液組成物
JP2009062426A (ja) 遊離砥粒ワイヤソー用水溶性加工油剤、スラリー及び切断加工方法
JP2008235675A (ja) ウェーハ用洗浄剤
KR20130067809A (ko) 수성 절삭액 조성물

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees