SG172288A1 - Composition for improving dryness during wire sawing - Google Patents

Composition for improving dryness during wire sawing Download PDF

Info

Publication number
SG172288A1
SG172288A1 SG2011045234A SG2011045234A SG172288A1 SG 172288 A1 SG172288 A1 SG 172288A1 SG 2011045234 A SG2011045234 A SG 2011045234A SG 2011045234 A SG2011045234 A SG 2011045234A SG 172288 A1 SG172288 A1 SG 172288A1
Authority
SG
Singapore
Prior art keywords
composition
substrate
abrasive
thickener
less
Prior art date
Application number
SG2011045234A
Other languages
English (en)
Inventor
Nevin Naguib
Steven Grumbine
Kevin Moeggenborg
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of SG172288A1 publication Critical patent/SG172288A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/007—Use, recovery or regeneration of abrasive mediums
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/04—Processes
    • Y10T83/0405—With preparatory or simultaneous ancillary treatment of work
    • Y10T83/0443—By fluid application

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG2011045234A 2008-12-20 2009-12-21 Composition for improving dryness during wire sawing SG172288A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20314608P 2008-12-20 2008-12-20
PCT/US2009/068909 WO2010071870A2 (en) 2008-12-20 2009-12-21 Composition for improving dryness during wire sawing

Publications (1)

Publication Number Publication Date
SG172288A1 true SG172288A1 (en) 2011-07-28

Family

ID=42269291

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2011045234A SG172288A1 (en) 2008-12-20 2009-12-21 Composition for improving dryness during wire sawing

Country Status (10)

Country Link
US (1) US8597538B2 (OSRAM)
EP (1) EP2377146A2 (OSRAM)
JP (1) JP5600117B2 (OSRAM)
KR (1) KR20110104066A (OSRAM)
CN (1) CN102257602A (OSRAM)
IL (1) IL213232A0 (OSRAM)
MY (1) MY152029A (OSRAM)
SG (1) SG172288A1 (OSRAM)
TW (1) TWI403575B (OSRAM)
WO (1) WO2010071870A2 (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112011100688T5 (de) * 2010-02-26 2013-02-28 Sumco Corporation Verfahren zum Herstellen eines Halbleiterwafers
JP6039935B2 (ja) * 2012-06-29 2016-12-07 出光興産株式会社 水性加工液
KR102040050B1 (ko) * 2013-08-02 2019-11-05 동우 화인켐 주식회사 웨이퍼 다이싱용 세정제 조성물
CN104194647B (zh) * 2014-09-02 2016-04-06 蓝思科技股份有限公司 一种加工蓝宝石专用钻石研磨液和研磨膏及它们的制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4468339B1 (en) * 1982-01-21 1989-05-16 Aqueous compositions containing overbased materials
JPS60141795A (ja) * 1983-12-29 1985-07-26 Sanyo Chem Ind Ltd 難削材用の切削・研削油剤
JP2894566B2 (ja) * 1989-12-08 1999-05-24 ユシロ化学工業株式会社 切断加工用油剤
JP3347278B2 (ja) * 1997-10-08 2002-11-20 ユシロ化学工業株式会社 難燃性潤滑油組成物ならびにこれを用いた切削液および切断方法
JP2000327838A (ja) * 1999-05-18 2000-11-28 Super Silicon Kenkyusho:Kk ワイヤソー又はバンドソー用水性研削液
JP2001164240A (ja) * 1999-12-06 2001-06-19 Ishii Hyoki Corp 水性切削液
JP2001303027A (ja) * 2000-04-26 2001-10-31 Seimi Chem Co Ltd 研磨用組成物及び研磨方法
JP2004051756A (ja) * 2002-07-19 2004-02-19 Sanyo Chem Ind Ltd Ｃｍｐプロセス用研磨組成物
JP4345357B2 (ja) * 2003-05-27 2009-10-14 株式会社Ｓｕｍｃｏ 半導体ウェーハの製造方法
JP2005034986A (ja) * 2003-06-27 2005-02-10 Showa Denko Kk 研磨用組成物とそれを用いた基板研磨方法
JP2005193332A (ja) * 2004-01-07 2005-07-21 Tokyo Seiko Co Ltd ソーワイヤ
JP2006096951A (ja) * 2004-09-30 2006-04-13 Kyodo Yushi Co Ltd 水溶性切断加工用油剤、スラリー、及び切断加工方法
EP2020680A4 (en) * 2006-04-24 2011-09-21 Hitachi Chemical Co Ltd POLISHING LIQUID FOR CMP AND POLISHING METHOD
MY149008A (en) * 2006-08-30 2013-06-28 Saint Gobain Ceramics Aqueous fluid compositions for abrasive slurries, methods of production, and methods of use thereof
JP5081435B2 (ja) * 2006-11-22 2012-11-28 出光興産株式会社 一方向クラッチ内臓型回転伝達装置用グリース
WO2008105342A1 (ja) * 2007-02-27 2008-09-04 Hitachi Chemical Co., Ltd. 金属用研磨液及び研磨方法
JP2008103690A (ja) * 2007-08-24 2008-05-01 Mitsubishi Electric Corp シリコンインゴット切断用スラリー

Also Published As

Publication number Publication date
CN102257602A (zh) 2011-11-23
JP5600117B2 (ja) 2014-10-01
TW201033342A (en) 2010-09-16
WO2010071870A3 (en) 2010-09-10
US20110239836A1 (en) 2011-10-06
WO2010071870A2 (en) 2010-06-24
TWI403575B (zh) 2013-08-01
KR20110104066A (ko) 2011-09-21
MY152029A (en) 2014-08-15
JP2012512757A (ja) 2012-06-07
EP2377146A2 (en) 2011-10-19
IL213232A0 (en) 2011-07-31
US8597538B2 (en) 2013-12-03

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