TWI403150B - 具有全景快門之針孔式光二極體像素 - Google Patents

具有全景快門之針孔式光二極體像素 Download PDF

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Publication number
TWI403150B
TWI403150B TW095118700A TW95118700A TWI403150B TW I403150 B TWI403150 B TW I403150B TW 095118700 A TW095118700 A TW 095118700A TW 95118700 A TW95118700 A TW 95118700A TW I403150 B TWI403150 B TW I403150B
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TW
Taiwan
Prior art keywords
photodetector
charge
sensing node
storage area
image sensor
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TW095118700A
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English (en)
Chinese (zh)
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TW200704141A (en
Inventor
蓋達希 羅柏特Ｍ
麥可葛拉希 羅伯特Ｄ
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豪威科技股份有限公司
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Publication of TW200704141A publication Critical patent/TW200704141A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H10F39/1865—Overflow drain structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW095118700A 2005-05-27 2006-05-26 具有全景快門之針孔式光二極體像素 TWI403150B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US68517305P 2005-05-27 2005-05-27
US11/393,292 US7361877B2 (en) 2005-05-27 2006-03-30 Pinned-photodiode pixel with global shutter

Publications (2)

Publication Number Publication Date
TW200704141A TW200704141A (en) 2007-01-16
TWI403150B true TWI403150B (zh) 2013-07-21

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TW095118700A TWI403150B (zh) 2005-05-27 2006-05-26 具有全景快門之針孔式光二極體像素

Country Status (7)

Country Link
US (1) US7361877B2 (https=)
EP (1) EP1883966B1 (https=)
JP (1) JP2008543061A (https=)
KR (1) KR101344539B1 (https=)
DE (1) DE602006011151D1 (https=)
TW (1) TWI403150B (https=)
WO (1) WO2006130443A1 (https=)

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Also Published As

Publication number Publication date
WO2006130443A1 (en) 2006-12-07
EP1883966B1 (en) 2009-12-16
EP1883966A1 (en) 2008-02-06
US20060266922A1 (en) 2006-11-30
KR20080012313A (ko) 2008-02-11
KR101344539B1 (ko) 2013-12-26
JP2008543061A (ja) 2008-11-27
US7361877B2 (en) 2008-04-22
TW200704141A (en) 2007-01-16
DE602006011151D1 (de) 2010-01-28

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