TWI403150B - 具有全景快門之針孔式光二極體像素 - Google Patents

具有全景快門之針孔式光二極體像素 Download PDF

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TWI403150B
TWI403150B TW095118700A TW95118700A TWI403150B TW I403150 B TWI403150 B TW I403150B TW 095118700 A TW095118700 A TW 095118700A TW 95118700 A TW95118700 A TW 95118700A TW I403150 B TWI403150 B TW I403150B
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photodetector
charge
sensing node
storage area
image sensor
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TW200704141A (en
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Robert M Guidash
Robert D Mcgrath
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Omnivision Tech Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • H01L27/14656—Overflow drain structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals

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  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Description

具有全景快門之針孔式光二極體像素
本發明概言之係關於影像感測器領域，且具體言之係關於具有全景電子快門之影像感測器。
參考圖1，當前已知並利用之影像感測器使用一像素10，該像素係一針孔式光二極體像素CMOS影像感測器。其經由一轉移閘極30將一光二極體20讀出合併至一感測節點40上，該感測節點可被重設至一參考電壓，且連接至一讀出(例如一源極隨耦器電路50之閘極)。此外，該光二極體20連接至一溢流閘極60以帶走在快門視窗之外的時間期間產生之光電流。
該光二極體20被製作為一具有淺p型釘紮層70及深n型擴散區80之針孔式光二極體，以形成一具有受控電位(例如1.5V)之用於保持電荷之隱埋通道。此摻雜組合將產生一極低之暗電流及暗電流點缺陷密度。將一溢流汲極90及一連接至重設閘極之參考偏壓設置至高電壓(例如3.3V)。
參考圖1及2，作業涉及使用溢流汲極90或轉移閘極30與重設閘極100之組合來排空光二極體20。重設閘極100亦用於將感測節點40重設至一大於光二極體20之設定偏壓的設定偏壓。隨後，同時關斷所有像素上之溢流汲極90、轉移閘極30及溢流閘極60以開始該快門視窗，並將來自入射光之信號整合在光二極體20上。為結束該快門視窗，接通轉移閘極30並將信號電荷完全轉移至感測節點40。接通溢流汲極90以將光二極體20上產生之任何額外電荷排盡。隨後讀出輸出，使用重設閘極100將感測節點40設置回參考電壓，並再次讀出該輸出。信號即為該等兩個讀出之間的差。
先前技術具有如下若干限制：(1)必須在信號讀出之後完成參考讀出以致於其來自非相關重設作業且添加了瞬時雜訊；(2)自快門視窗之結束至信號電荷之讀出期間必須將信號電荷保持在感測節點上，從而在此期間使暗電流形成為背景與亮點。
因此，存在克服上文闡述缺陷之需要。
本發明旨在克服上文列舉問題中之一個或多個。概言之，根據本發明之一態樣，本發明存在於一影像感測器中，該影像感測器包括一用於響應入射光收集電荷之光偵測器、一毗鄰該光偵測器並接收來自該光偵測器之電荷之儲存區域、一毗鄰該儲存區域並接收來自該儲存區域之電荷及將該電荷轉化為一電壓信號之感測節點、及一用於感測來自該感測節點之電壓信號的放大器。
審閱下文對較佳實施例之詳細闡述及所附申請專利範圍並參考附圖，將更清晰地瞭解及領會本發明之該等及其它態樣、目的、特徵及優勢。
[本發明之優勢效果]
本發明具有下述優勢：提供具有低暗電流儲存區域及用於減少雜訊之真實相關雙重取樣的全景電子快門。
參考圖3，其顯示本發明之影像感測器110，其被佈置成一個二維像素陣列120。該影像感測器110亦包含用於自該等像素120讀出信號之讀出電路115及用於將時序信號提供給該等像素120之位址電路125。
參考圖4，其顯示一本發明之影像感測器之橫截面。該影像感測器包含複數個像素120(為清晰起見僅顯示其中一個)，每一像素120皆具有一第一針孔式光二極體130，該第一針孔式光二極體具有一層140以用於收集自入射光產生之電荷及具有一釘紮層150。一快門閘極160將該電荷轉移至一第二針孔式二極體或儲存區域170以儲存該被轉移之電荷。一轉移閘極180將該電荷轉移至一毗鄰該第二針孔式二極體170之感測節點190(較佳一浮動擴散區)。該感測節點190將該電荷轉變為一藉由放大器200(較佳一源極隨耦器)感測之電壓。一摻雜區域或電荷屏蔽225包圍該儲存區域170及感測節點190以將該儲存區域170及感測節點190與未自光二極體130轉移之光致電荷大致屏蔽開來。一重設電晶體215將該浮動擴散區190重設至一參考電壓。一溢流汲極210係毗鄰該第一針孔式光二極體130，以用於排盡來自該第一針孔式光二極體130之過剩電荷。
一遮光罩220橫跨並覆蓋該第二針孔式二極體170及該浮動擴散區190以防止該第二針孔式二極體170及該浮動擴散區190接收到入射光。該遮光罩220較佳距該感測節點190中一半導體之上表面大致50至500奈米。
參考圖4及5，作業涉及使用溢流閘極205及溢流汲極210或快門閘極160及轉移閘極180及重設閘極215之組合來排空該光二極體130。該重設閘極215亦用於將感測節點190重設至一大於光二極體130之設定偏壓的設定偏壓，並與快門閘極160組合以排空來自該第二針孔式二極體或儲存區域170之所有電荷。接通該快門閘極160並隨後同時關斷所有像素120上之溢流閘極205、轉移閘極180以開始快門視窗，且來自入射光之信號在該光二極體130上產生整合於儲存區域170上之電荷。為結束該快門視窗，關斷快門閘極160並將信號電荷保持於儲存區域170上。接通溢流閘極205，以使光二極體130上產生之任何額外電荷將被排盡。藉由定時接通關斷該重設電晶體215而將感測節點190重設至一參考電壓並隨後讀出該輸出。隨後接通轉移閘極180以將信號電荷轉移至感測節點190並讀出該輸出。該信號即為該等兩個讀出之間的差。
圖6係一圖解說明圖4之本發明的示意性圖式，其中所有組件(溢流汲極210、光二極體130、快門閘極160、第二針孔式二極體170、轉移閘極180、感測節點190、重設電晶體215、及放大器200)皆在一個像素內。圖7係圖解說明圖4之本發明的示意性圖式，其中兩個像素120a與120b之間實體上共用重設電晶體215與放大器200。更具體而言，圖7圖解說明該感測節點190、一放大器輸入200及一重設電晶體215之電共用。應注意，如彼等熟習此項技術者易於瞭解，圖7之共用可擴展至超出兩個像素。
參考圖8，其顯示一數位照相機230，以用於圖解說明尋常消費者所習慣之本發明之影像感測器110之一典型商業實施例。
10．．．像素
20．．．光二極體
30．．．轉移閘極
40．．．感測節點
50．．．源極隨耦器電路
60．．．溢流閘極
70．．．p型釘紮層
80．．．n型擴散區
90．．．溢流汲極
100．．．重設閘極
110．．．影像感測器
115．．．讀出電路
120．．．像素
120a．．．共用像素1
120b．．．共用像素2
125．．．位址電路
130．．．第一針孔式光二極體(光偵測器)
140．．．層
150．．．釘紮層
160．．．快門閘極
170．．．第二針孔式二極體(儲存區域)
180．．．轉移閘極
190．．．感測節點(浮動擴散區)
200．．．放大器
205．．．溢流閘極
210．．．溢流汲極
215．．．重設電晶體(閘極)
220．．．遮光罩
225．．．摻雜區域或電荷屏蔽
230．．．數位照相機
圖1係一先前技術之影像感測器的側視圖；圖2係圖1之一時序圖；圖3係一本發明之影像感測器之俯視圖；圖4係一本發明之影像感測器之橫截面側視圖；圖5係圖4之一時序圖；圖6係一圖4之橫截面側視圖，其顯示一非共用組態；圖7係一圖4之截面圖側視圖，其顯示一共用組態；及圖8係一具有本發明之影像感測器之數位照相機之側視圖，其用於顯示一尋常消費者所習慣之典型商業實施例。
120．．．像素
130．．．第一針孔式光二極體(光偵測器)
140．．．層
150．．．釘紮層
160．．．快門閘極
170．．．第二針孔式二極體(儲存區域)
180．．．轉移閘極
190．．．感測節點(浮動擴散區)
200．．．放大器
205．．．溢流閘極
210．．．溢流汲極
215．．．重設電晶體(閘極)
220．．．遮光罩
225．．．摻雜區域或電荷屏蔽

Claims (14)

  1. 一種影像感測器，其包括：一二維像素陣列，其包括：(a)一用於響應入射光收集電荷之光偵測器；(b)一毗鄰該光偵測器並接收來自該光偵測器之電荷的儲存區域，其中該儲存區域經最佳化以得到低暗電流及低電荷產生缺陷；(c)一毗鄰該儲存區域並自該儲存區域接收電荷並將該電荷轉變至一電壓信號的感測節點；(d)一摻雜區域僅包圍該儲存區域及感測節點以將該儲存區域及感測節點與未自光偵測器轉移之光致電荷大致屏蔽開來；及(e)一至一用於自該感測節點感測電壓信號之放大器之輸入；其中該光偵測器係一針孔式光二極體。
  2. 如請求項1之影像感測器，其中每一像素皆包括該光偵測器及該儲存區域。
  3. 如請求項2之影像感測器，其中一像素子集共用該感測節點及至該放大器之該輸入。
  4. 如請求項1之影像感測器，其中該儲存區域係一針孔式光二極體。
  5. 如請求項1之影像感測器，其進一步包括一橫跨該感測節點之一大部分或全部之遮光罩。
  6. 如請求項5之影像感測器，其中該遮光罩橫跨該感測節點 及該儲存區域之一大部分或全部。
  7. 如請求項1之影像感測器，其進一步包括一毗鄰該光偵測器之溢流汲極。
  8. 一種照相機，其包括：一影像感測器，其包括：一二維像素陣列，其包括：(a)一用於響應入射光收集電荷之光偵測器；(b)一毗鄰該光偵測器並自該光偵測器接收電荷之儲存區域，其中該儲存區域經最佳化以得到低暗電流及低電荷產生缺陷；(c)一毗鄰該儲存區域並自該儲存區域接收電荷並將該電荷轉變至一電壓信號之感測節點；及(d)一摻雜區域僅包圍該儲存區域及感測節點以將該儲存區域及感測節點與未自光偵測器轉移之光致電荷大致屏蔽開來；及(e)一至一用於自該感測節點感測電壓信號之放大器之輸入；其中該光偵測器係一針孔式光二極體。
  9. 如請求項8之照相機，其中每一像素皆包括該光偵測器及該儲存區域。
  10. 如請求項9之照相機，其中一像素子集共用該感測節點及至該放大器之該輸入。
  11. 如請求項8之照相機，其中每一像素皆包括該光偵測器、儲存區域、感測節點及至該放大器之該輸入。
  12. 如請求項8之照相機，其中該儲存區域係一針孔式光二極 體。
  13. 如請求項8之照相機，其進一步包括一橫跨該感測節點之一大部分或全部之遮光罩。
  14. 如請求項13之照相機，其中該遮光罩橫跨該感測節點及該儲存區域之一大部分或全部。
TW095118700A 2005-05-27 2006-05-26 具有全景快門之針孔式光二極體像素 TWI403150B (zh)

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US11/393,292 US7361877B2 (en) 2005-05-27 2006-03-30 Pinned-photodiode pixel with global shutter

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