TWI402967B - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
TWI402967B
TWI402967B TW98133280A TW98133280A TWI402967B TW I402967 B TWI402967 B TW I402967B TW 98133280 A TW98133280 A TW 98133280A TW 98133280 A TW98133280 A TW 98133280A TW I402967 B TWI402967 B TW I402967B
Authority
TW
Taiwan
Prior art keywords
region
conductivity type
semiconductor device
drain
type
Prior art date
Application number
TW98133280A
Other languages
English (en)
Chinese (zh)
Other versions
TW201025567A (en
Inventor
Kazuya Aizawa
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Publication of TW201025567A publication Critical patent/TW201025567A/zh
Application granted granted Critical
Publication of TWI402967B publication Critical patent/TWI402967B/zh

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
TW98133280A 2008-09-30 2009-09-30 Semiconductor device TWI402967B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008255733 2008-09-30
JP2009221684A JP5487852B2 (ja) 2008-09-30 2009-09-25 半導体装置

Publications (2)

Publication Number Publication Date
TW201025567A TW201025567A (en) 2010-07-01
TWI402967B true TWI402967B (zh) 2013-07-21

Family

ID=42298438

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98133280A TWI402967B (zh) 2008-09-30 2009-09-30 Semiconductor device

Country Status (3)

Country Link
JP (1) JP5487852B2 (ja)
CN (1) CN101714558B (ja)
TW (1) TWI402967B (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5585481B2 (ja) * 2011-02-10 2014-09-10 株式会社デンソー 半導体装置
DE102011076610A1 (de) 2010-06-04 2011-12-08 Denso Corporation Stromsensor, inverterschaltung und diese aufweisende halbleitervorrichtung
JP5849488B2 (ja) * 2011-07-20 2016-01-27 サンケン電気株式会社 スイッチング電源装置
CN103000626B (zh) * 2012-11-28 2015-08-26 深圳市明微电子股份有限公司 合成结构的高压器件及启动电路
US9177953B2 (en) * 2013-10-31 2015-11-03 Taiwan Semiconductor Manufacturing Company Limited Circular semiconductor device with electrostatic discharge (ESD) device and functional device
CN104752518B (zh) * 2013-12-31 2018-02-06 上海华虹宏力半导体制造有限公司 隔离型高耐压场效应管
CN105514040A (zh) * 2015-12-22 2016-04-20 上海华虹宏力半导体制造有限公司 集成jfet的ldmos器件及工艺方法
CN105702678B (zh) * 2016-01-29 2018-08-21 上海华虹宏力半导体制造有限公司 Ldmos和jfet的集成结构及其制造方法
CN109564877B (zh) * 2017-07-14 2023-08-25 新唐科技日本株式会社 半导体装置
WO2019202760A1 (ja) * 2018-04-16 2019-10-24 パナソニックＩｐマネジメント株式会社 半導体装置
CN116759455A (zh) * 2018-05-25 2023-09-15 矽力杰半导体技术(杭州)有限公司 横向扩散金属氧化物半导体器件和其制造方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0278275A (ja) * 1988-09-14 1990-03-19 Hitachi Ltd 出力回路
JPH05267652A (ja) * 1991-10-15 1993-10-15 Texas Instr Inc <Ti> 電界効果トランジスタ
JP2003224429A (ja) * 2002-01-29 2003-08-08 Nec Corp 温度補償回路及びｆｅｔ増幅器
US6621132B2 (en) * 2000-09-05 2003-09-16 Fuji Electric Co., Ltds. Semiconductor device
US6867457B2 (en) * 2002-07-10 2005-03-15 Canon Kabushiki Kaisha Semiconductor device and liquid jetting device using the same
TW200612556A (en) * 2004-06-23 2006-04-16 Freescale Semiconductor Inc LDMOS transistor
TW200717799A (en) * 2005-08-10 2007-05-01 Koninkl Philips Electronics Nv LDMOS transistor
US7224022B2 (en) * 2001-09-19 2007-05-29 Kabushiki Kaisha Toshiba Vertical type semiconductor device and method of manufacturing the same
EP1895595A2 (en) * 1996-10-18 2008-03-05 Hitachi, Ltd. Semiconductor device and electric power conversion apparatus therewith
TW200836342A (en) * 2007-02-20 2008-09-01 Ciclon Semiconductor Device Corp Power LDMOS transistor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09266256A (ja) * 1996-03-28 1997-10-07 Yokogawa Electric Corp 高耐圧ｍｏｓトランジスタ及びスイッチング電源装置
JPH1041499A (ja) * 1996-07-18 1998-02-13 Yokogawa Electric Corp 高耐圧ｄｍｏｓ ｆｅｔ
JPH11340454A (ja) * 1998-05-28 1999-12-10 Matsushita Electron Corp 半導体装置およびその製造方法
JP5070693B2 (ja) * 2005-11-11 2012-11-14 サンケン電気株式会社 半導体装置
CN100392844C (zh) * 2006-10-27 2008-06-04 无锡市晶源微电子有限公司 垂直双扩散型场效应管兼容常规场效应管的制作方法
CN100580928C (zh) * 2006-11-24 2010-01-13 杭州士兰微电子股份有限公司 一种复合型的场效应晶体管结构及其制造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0278275A (ja) * 1988-09-14 1990-03-19 Hitachi Ltd 出力回路
JPH05267652A (ja) * 1991-10-15 1993-10-15 Texas Instr Inc <Ti> 電界効果トランジスタ
EP1895595A2 (en) * 1996-10-18 2008-03-05 Hitachi, Ltd. Semiconductor device and electric power conversion apparatus therewith
US6621132B2 (en) * 2000-09-05 2003-09-16 Fuji Electric Co., Ltds. Semiconductor device
US7224022B2 (en) * 2001-09-19 2007-05-29 Kabushiki Kaisha Toshiba Vertical type semiconductor device and method of manufacturing the same
JP2003224429A (ja) * 2002-01-29 2003-08-08 Nec Corp 温度補償回路及びｆｅｔ増幅器
US6867457B2 (en) * 2002-07-10 2005-03-15 Canon Kabushiki Kaisha Semiconductor device and liquid jetting device using the same
TW200612556A (en) * 2004-06-23 2006-04-16 Freescale Semiconductor Inc LDMOS transistor
TW200717799A (en) * 2005-08-10 2007-05-01 Koninkl Philips Electronics Nv LDMOS transistor
TW200836342A (en) * 2007-02-20 2008-09-01 Ciclon Semiconductor Device Corp Power LDMOS transistor

Also Published As

Publication number Publication date
CN101714558A (zh) 2010-05-26
JP5487852B2 (ja) 2014-05-14
JP2010109344A (ja) 2010-05-13
CN101714558B (zh) 2012-11-07
TW201025567A (en) 2010-07-01

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