TWI402967B - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- TWI402967B TWI402967B TW98133280A TW98133280A TWI402967B TW I402967 B TWI402967 B TW I402967B TW 98133280 A TW98133280 A TW 98133280A TW 98133280 A TW98133280 A TW 98133280A TW I402967 B TWI402967 B TW I402967B
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- conductivity type
- semiconductor device
- drain
- type
- Prior art date
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008255733 | 2008-09-30 | ||
JP2009221684A JP5487852B2 (ja) | 2008-09-30 | 2009-09-25 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201025567A TW201025567A (en) | 2010-07-01 |
TWI402967B true TWI402967B (zh) | 2013-07-21 |
Family
ID=42298438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW98133280A TWI402967B (zh) | 2008-09-30 | 2009-09-30 | Semiconductor device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5487852B2 (ja) |
CN (1) | CN101714558B (ja) |
TW (1) | TWI402967B (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5585481B2 (ja) * | 2011-02-10 | 2014-09-10 | 株式会社デンソー | 半導体装置 |
DE102011076610A1 (de) | 2010-06-04 | 2011-12-08 | Denso Corporation | Stromsensor, inverterschaltung und diese aufweisende halbleitervorrichtung |
JP5849488B2 (ja) * | 2011-07-20 | 2016-01-27 | サンケン電気株式会社 | スイッチング電源装置 |
CN103000626B (zh) * | 2012-11-28 | 2015-08-26 | 深圳市明微电子股份有限公司 | 合成结构的高压器件及启动电路 |
US9177953B2 (en) * | 2013-10-31 | 2015-11-03 | Taiwan Semiconductor Manufacturing Company Limited | Circular semiconductor device with electrostatic discharge (ESD) device and functional device |
CN104752518B (zh) * | 2013-12-31 | 2018-02-06 | 上海华虹宏力半导体制造有限公司 | 隔离型高耐压场效应管 |
CN105514040A (zh) * | 2015-12-22 | 2016-04-20 | 上海华虹宏力半导体制造有限公司 | 集成jfet的ldmos器件及工艺方法 |
CN105702678B (zh) * | 2016-01-29 | 2018-08-21 | 上海华虹宏力半导体制造有限公司 | Ldmos和jfet的集成结构及其制造方法 |
CN109564877B (zh) * | 2017-07-14 | 2023-08-25 | 新唐科技日本株式会社 | 半导体装置 |
WO2019202760A1 (ja) * | 2018-04-16 | 2019-10-24 | パナソニックIpマネジメント株式会社 | 半導体装置 |
CN116759455A (zh) * | 2018-05-25 | 2023-09-15 | 矽力杰半导体技术(杭州)有限公司 | 横向扩散金属氧化物半导体器件和其制造方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0278275A (ja) * | 1988-09-14 | 1990-03-19 | Hitachi Ltd | 出力回路 |
JPH05267652A (ja) * | 1991-10-15 | 1993-10-15 | Texas Instr Inc <Ti> | 電界効果トランジスタ |
JP2003224429A (ja) * | 2002-01-29 | 2003-08-08 | Nec Corp | 温度補償回路及びfet増幅器 |
US6621132B2 (en) * | 2000-09-05 | 2003-09-16 | Fuji Electric Co., Ltds. | Semiconductor device |
US6867457B2 (en) * | 2002-07-10 | 2005-03-15 | Canon Kabushiki Kaisha | Semiconductor device and liquid jetting device using the same |
TW200612556A (en) * | 2004-06-23 | 2006-04-16 | Freescale Semiconductor Inc | LDMOS transistor |
TW200717799A (en) * | 2005-08-10 | 2007-05-01 | Koninkl Philips Electronics Nv | LDMOS transistor |
US7224022B2 (en) * | 2001-09-19 | 2007-05-29 | Kabushiki Kaisha Toshiba | Vertical type semiconductor device and method of manufacturing the same |
EP1895595A2 (en) * | 1996-10-18 | 2008-03-05 | Hitachi, Ltd. | Semiconductor device and electric power conversion apparatus therewith |
TW200836342A (en) * | 2007-02-20 | 2008-09-01 | Ciclon Semiconductor Device Corp | Power LDMOS transistor |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09266256A (ja) * | 1996-03-28 | 1997-10-07 | Yokogawa Electric Corp | 高耐圧mosトランジスタ及びスイッチング電源装置 |
JPH1041499A (ja) * | 1996-07-18 | 1998-02-13 | Yokogawa Electric Corp | 高耐圧dmos fet |
JPH11340454A (ja) * | 1998-05-28 | 1999-12-10 | Matsushita Electron Corp | 半導体装置およびその製造方法 |
JP5070693B2 (ja) * | 2005-11-11 | 2012-11-14 | サンケン電気株式会社 | 半導体装置 |
CN100392844C (zh) * | 2006-10-27 | 2008-06-04 | 无锡市晶源微电子有限公司 | 垂直双扩散型场效应管兼容常规场效应管的制作方法 |
CN100580928C (zh) * | 2006-11-24 | 2010-01-13 | 杭州士兰微电子股份有限公司 | 一种复合型的场效应晶体管结构及其制造方法 |
-
2009
- 2009-09-25 JP JP2009221684A patent/JP5487852B2/ja active Active
- 2009-09-29 CN CN2009101785696A patent/CN101714558B/zh active Active
- 2009-09-30 TW TW98133280A patent/TWI402967B/zh active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0278275A (ja) * | 1988-09-14 | 1990-03-19 | Hitachi Ltd | 出力回路 |
JPH05267652A (ja) * | 1991-10-15 | 1993-10-15 | Texas Instr Inc <Ti> | 電界効果トランジスタ |
EP1895595A2 (en) * | 1996-10-18 | 2008-03-05 | Hitachi, Ltd. | Semiconductor device and electric power conversion apparatus therewith |
US6621132B2 (en) * | 2000-09-05 | 2003-09-16 | Fuji Electric Co., Ltds. | Semiconductor device |
US7224022B2 (en) * | 2001-09-19 | 2007-05-29 | Kabushiki Kaisha Toshiba | Vertical type semiconductor device and method of manufacturing the same |
JP2003224429A (ja) * | 2002-01-29 | 2003-08-08 | Nec Corp | 温度補償回路及びfet増幅器 |
US6867457B2 (en) * | 2002-07-10 | 2005-03-15 | Canon Kabushiki Kaisha | Semiconductor device and liquid jetting device using the same |
TW200612556A (en) * | 2004-06-23 | 2006-04-16 | Freescale Semiconductor Inc | LDMOS transistor |
TW200717799A (en) * | 2005-08-10 | 2007-05-01 | Koninkl Philips Electronics Nv | LDMOS transistor |
TW200836342A (en) * | 2007-02-20 | 2008-09-01 | Ciclon Semiconductor Device Corp | Power LDMOS transistor |
Also Published As
Publication number | Publication date |
---|---|
CN101714558A (zh) | 2010-05-26 |
JP5487852B2 (ja) | 2014-05-14 |
JP2010109344A (ja) | 2010-05-13 |
CN101714558B (zh) | 2012-11-07 |
TW201025567A (en) | 2010-07-01 |
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