TWI402616B - 新穎的光敏性樹脂組成物 - Google Patents
新穎的光敏性樹脂組成物 Download PDFInfo
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- TWI402616B TWI402616B TW095119612A TW95119612A TWI402616B TW I402616 B TWI402616 B TW I402616B TW 095119612 A TW095119612 A TW 095119612A TW 95119612 A TW95119612 A TW 95119612A TW I402616 B TWI402616 B TW I402616B
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- photosensitive composition
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- MIROPXUFDXCYLG-UHFFFAOYSA-N pyridine-2,5-diamine Chemical compound NC1=CC=C(N)N=C1 MIROPXUFDXCYLG-UHFFFAOYSA-N 0.000 description 1
- VHNQIURBCCNWDN-UHFFFAOYSA-N pyridine-2,6-diamine Chemical compound NC1=CC=CC(N)=N1 VHNQIURBCCNWDN-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 125000004151 quinonyl group Chemical group 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- LXEJRKJRKIFVNY-UHFFFAOYSA-N terephthaloyl chloride Chemical compound ClC(=O)C1=CC=C(C(Cl)=O)C=C1 LXEJRKJRKIFVNY-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 1
- GRGCWBWNLSTIEN-UHFFFAOYSA-N trifluoromethanesulfonyl chloride Chemical compound FC(F)(F)S(Cl)(=O)=O GRGCWBWNLSTIEN-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US68743405P | 2005-06-03 | 2005-06-03 |
Publications (2)
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| TW200702911A TW200702911A (en) | 2007-01-16 |
| TWI402616B true TWI402616B (zh) | 2013-07-21 |
Family
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| TW095119612A TWI402616B (zh) | 2005-06-03 | 2006-06-02 | 新穎的光敏性樹脂組成物 |
Country Status (6)
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| US (1) | US7220520B2 (enExample) |
| EP (1) | EP1886187A4 (enExample) |
| JP (1) | JP4759613B2 (enExample) |
| KR (1) | KR101278517B1 (enExample) |
| TW (1) | TWI402616B (enExample) |
| WO (1) | WO2006132962A2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1861749A4 (en) * | 2005-03-25 | 2010-10-06 | Fujifilm Electronic Materials | NEW PHOTOSENSITIVE RESIN COMPOSITIONS |
| KR20080018899A (ko) * | 2005-06-03 | 2008-02-28 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 전처리 조성물 |
| JP4911454B2 (ja) * | 2006-09-19 | 2012-04-04 | 富士フイルム株式会社 | ポリベンゾオキサゾール前駆体、それを用いた感光性樹脂組成物及び半導体装置の製造方法 |
| JP5028059B2 (ja) * | 2006-09-28 | 2012-09-19 | 富士フイルム株式会社 | 感光性樹脂組成物、それを用いた硬化レリーフパターンの製造方法及び半導体装置 |
| US8318410B2 (en) | 2008-01-30 | 2012-11-27 | Nissan Chemical Industries, Ltd. | Sulfur atom-containing resist underlayer film forming composition and method for forming resist pattern |
| KR100932765B1 (ko) * | 2008-02-28 | 2009-12-21 | 한양대학교 산학협력단 | 폴리이미드-폴리벤조옥사졸 공중합체, 이의 제조방법, 및이를 포함하는 기체 분리막 |
| CA2640517A1 (en) * | 2008-05-19 | 2009-11-19 | Industry-University Cooperation Foundation, Hanyang University | Polyamic acids dope composition, preparation method of hollow fiber using the same and hollow fiber prepared therefrom |
| US8013103B2 (en) * | 2008-10-10 | 2011-09-06 | Industry-University Cooperation Foundation, Hanyang University | Polymer compounds and a preparation method thereof |
| US8487064B2 (en) | 2008-10-10 | 2013-07-16 | Industry-University Cooperation Foundation, Hanyang University | Polymer compounds and a preparation method thereof |
| KR101791265B1 (ko) * | 2010-12-13 | 2017-10-30 | 동우 화인켐 주식회사 | 포지티브형 포토레지스트 조성물 및 이를 이용한 포토레지스트 패턴 형성방법 |
| JP6048257B2 (ja) * | 2013-03-25 | 2016-12-21 | 東レ株式会社 | 耐熱性樹脂及びその前駆体組成物 |
| JP6225445B2 (ja) * | 2013-03-26 | 2017-11-08 | 東レ株式会社 | ドライエッチング用フォトレジスト、それを用いたレリーフパターンおよび発光素子の製造方法 |
| JP2019028316A (ja) | 2017-07-31 | 2019-02-21 | 太陽ホールディングス株式会社 | 感光性樹脂組成物、ドライフィルム、硬化物、プリント配線板および半導体素子 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5214116A (en) * | 1989-02-07 | 1993-05-25 | Tokuyama Soda Kabushiki Kaisha | Resin derived from sulfur-containing unsaturated compound and having a high refractive index |
| TW200502692A (en) * | 2003-03-11 | 2005-01-16 | Arch Spec Chem Inc | Novel photosensitive resin compositions |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3873316A (en) * | 1970-06-11 | 1975-03-25 | Kalle Ag | Process for the production of a light-sensitive copying material having a copper-containing support, and copying material so produced |
| US3645772A (en) * | 1970-06-30 | 1972-02-29 | Du Pont | Process for improving bonding of a photoresist to copper |
| DE2931297A1 (de) | 1979-08-01 | 1981-02-19 | Siemens Ag | Waermebestaendige positivresists und verfahren zur herstellung waermebestaendiger reliefstrukturen |
| DE3021748A1 (de) | 1980-06-10 | 1981-12-17 | Siemens AG, 1000 Berlin und 8000 München | Strahlungsreaktive vorstufen hochwaermebestaendiger polymerer |
| DE3411659A1 (de) | 1984-03-29 | 1985-10-03 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von polyoxazol- und polythiazol-vorstufen |
| DE3850809D1 (de) | 1987-05-18 | 1994-09-01 | Siemens Ag | Wärmebeständige Positivresists und Verfahren zur Herstellung wärmebeständiger Reliefstrukturen. |
| US5037720A (en) | 1987-07-21 | 1991-08-06 | Hoechst Celanese Corporation | Hydroxylated aromatic polyamide polymer containing bound naphthoquinone diazide photosensitizer, method of making and use |
| EP0391196A3 (de) | 1989-04-06 | 1991-02-27 | Siemens Aktiengesellschaft | Herstellung von Hydroxypolyamiden |
| DE59208963D1 (de) | 1991-05-07 | 1997-11-20 | Siemens Ag | Hochwärmebeständige Positivresists und Verfahren zur Herstellung hochwärmebeständiger Reliefstrukturen |
| US5434031A (en) * | 1992-11-18 | 1995-07-18 | Tokyo Ohka Kogyo Co., Ltd. | Positive-working naphthoquinone diazide photoresist composition containing specific hydroxy compound additive |
| TW263534B (enExample) * | 1993-08-11 | 1995-11-21 | Makkusu Kk | |
| JP3748086B2 (ja) | 1996-06-05 | 2006-02-22 | 日立化成工業株式会社 | 感光材料、レリーフパターンの製造法及びポリイミドパターンの製造法 |
| US6001517A (en) * | 1996-10-31 | 1999-12-14 | Kabushiki Kaisha Toshiba | Positive photosensitive polymer composition, method of forming a pattern and electronic parts |
| US6177225B1 (en) | 1998-10-01 | 2001-01-23 | Arch Specialty Chemicals, Inc. | Photosensitive resin compositions |
| US6214516B1 (en) | 1998-10-01 | 2001-04-10 | Arch Specialty Chemicals, Inc. | Photosensitive resin compositions |
| JP3667184B2 (ja) * | 1999-02-26 | 2005-07-06 | 住友ベークライト株式会社 | 半導体装置 |
| WO2004109400A2 (en) * | 2003-03-11 | 2004-12-16 | Arch Speciality Chemicals, Inc. | Novel photosensitive resin compositions |
| TWI363249B (en) * | 2003-10-15 | 2012-05-01 | Fujifilm Electronic Materials | Novel photosensitive resin compositions |
| JP4403811B2 (ja) * | 2004-01-26 | 2010-01-27 | 東レ株式会社 | ポジ型感光性樹脂組成物 |
-
2006
- 2006-06-02 JP JP2008514897A patent/JP4759613B2/ja not_active Expired - Fee Related
- 2006-06-02 US US11/445,764 patent/US7220520B2/en not_active Expired - Fee Related
- 2006-06-02 WO PCT/US2006/021441 patent/WO2006132962A2/en not_active Ceased
- 2006-06-02 KR KR1020077029325A patent/KR101278517B1/ko not_active Expired - Fee Related
- 2006-06-02 TW TW095119612A patent/TWI402616B/zh not_active IP Right Cessation
- 2006-06-02 EP EP06771936A patent/EP1886187A4/en not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5214116A (en) * | 1989-02-07 | 1993-05-25 | Tokuyama Soda Kabushiki Kaisha | Resin derived from sulfur-containing unsaturated compound and having a high refractive index |
| TW200502692A (en) * | 2003-03-11 | 2005-01-16 | Arch Spec Chem Inc | Novel photosensitive resin compositions |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2006132962A2 (en) | 2006-12-14 |
| KR101278517B1 (ko) | 2013-06-26 |
| KR20080018894A (ko) | 2008-02-28 |
| JP2008546027A (ja) | 2008-12-18 |
| US20060275699A1 (en) | 2006-12-07 |
| EP1886187A2 (en) | 2008-02-13 |
| WO2006132962A3 (en) | 2007-05-10 |
| US7220520B2 (en) | 2007-05-22 |
| JP4759613B2 (ja) | 2011-08-31 |
| TW200702911A (en) | 2007-01-16 |
| EP1886187A4 (en) | 2010-10-06 |
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