TWI402326B - Circuit connection material and circuit structure of the connection structure - Google Patents

Circuit connection material and circuit structure of the connection structure Download PDF

Info

Publication number
TWI402326B
TWI402326B TW097117828A TW97117828A TWI402326B TW I402326 B TWI402326 B TW I402326B TW 097117828 A TW097117828 A TW 097117828A TW 97117828 A TW97117828 A TW 97117828A TW I402326 B TWI402326 B TW I402326B
Authority
TW
Taiwan
Prior art keywords
circuit
connecting material
conductive particles
circuit connecting
connection
Prior art date
Application number
TW097117828A
Other languages
English (en)
Other versions
TW200916551A (en
Inventor
Kazuyoshi Kojima
Kouji Kobayashi
Motohiro Arifuku
Nichiomi Mochizuki
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of TW200916551A publication Critical patent/TW200916551A/zh
Application granted granted Critical
Publication of TWI402326B publication Critical patent/TWI402326B/zh

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/70—Coupling devices
    • H01R12/71—Coupling devices for rigid printing circuits or like structures
    • H01R12/712—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit
    • H01R12/714—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit with contacts abutting directly the printed circuit; Button contacts therefore provided on the printed circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/03—Contact members characterised by the material, e.g. plating, or coating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/04—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00—Use of ingredients characterised by shape
    • C08K7/16—Solid spheres
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00—Use of pretreated ingredients
    • C08K9/02—Ingredients treated with inorganic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/05611—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05639—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05669—Platinum [Pt] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05671—Chromium [Cr] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1301—Shape
    • H01L2224/13016—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29499—Shape or distribution of the fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/2954—Coating
    • H01L2224/29599—Material
    • H01L2224/29698—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29798—Fillers
    • H01L2224/29799—Base material
    • H01L2224/2989—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/819—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
    • H01L2224/81901—Pressing the bump connector against the bonding areas by means of another connector
    • H01L2224/81903—Pressing the bump connector against the bonding areas by means of another connector by means of a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01045—Rhodium [Rh]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0133—Ternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0221—Insulating particles having an electrically conductive coating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/36—Assembling printed circuits with other printed circuits
    • H05K3/361—Assembling flexible printed circuits with other printed circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y10T428/2998—Coated including synthetic resin or polymer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Conductive Materials (AREA)
  • Wire Bonding (AREA)
  • Non-Insulated Conductors (AREA)

Description

電路連接材料及電路構件之連接構造
本發明有關電路連接材料及電路構件之連接構造。
液晶顯示器與輸送膠帶封裝體(Tape Carrier Package：TCP)的連接、柔性印刷電路板(Flexible Printed Circuit：FPC)與TCP的連接、或FPC與印刷電路板的連接等之電路構件互相之間的連接，一般使用經使導電粒子分散於接著劑中而成之電路連接材料(例如，各向異性導電性接著劑(anisotropic conductive adhesive)。
又，最近，將半導體矽晶片安裝於基板時，為了電路構件彼此間之連接，在不使用打線接合(wire bonding)之下，實施將半導體矽晶片加以面朝下(face down)並直接安裝之所謂倒裝晶片(flip chip)封裝。於此倒裝晶片封裝中，電路構件彼此間之連接仍然使用各向異性導電性接著劑(anisotropic conductive adhesive)等的電路連接材料(參考專利文獻1至5)。
專利文獻1：日本專利特開昭59-120436號公報
專利文獻2：日本專利特開昭60-191228號公報
專利文獻3：日本專利特開平1-251787號公報
專利文獻4：日本專利特開平7-90237號公報
專利文獻5：日本專利特開2001-189171號公報
專利文獻6：日本專利特開2005-166438號公報
然而，近年來，隨著電子設備的小型化、薄型化，電路構件上所形成之電路持續地高密度化，以致有相鄰接之電極之間的間隔或電極的寬幅變得非常狹窄的傾向。電路電極(circuit electrode)的形成，係以下述步驟來進行：將成為電路基本之金屬形成於基板全面上，並於將形成電路電極之部分塗佈抗蝕劑(resist)，使其硬化，再將其他部分使用酸或鹼加以蝕刻。但在上述之經高密度化之電路的情形，如經形成於基板全面之金屬凹凸大時，則由於在凹部與凸部之蝕刻時間會有不同，而不能進行精密的蝕刻，以致有鄰接電路間發生短路或斷線之問題。因此，高密度電路的電極表面，需要凹凸情況小，亦即，電極表面為平坦。
然而，如將此種呈對向之平坦的電路電極彼此間，使用前述之習知的電路連接材料而加以連接時，則在電路連接材料中所含之導電粒子與平坦電極之間有接著劑樹脂之殘留，以致有在呈對向之電路電極間不能確保充分的電連接及長期可靠性之問題。
於是，以解決此種問題作為目的，提案有將於表面側具備有複數個突起部之具有最外層為金(Au)的導電粒子之電路連接材料用於呈對向之電路電極彼此間的連接之作法(參考專利文獻6)。
經使用此種電路連接材料所連接之電路連接構造體，雖然在呈對向之電路電極間能確保充分的電連接及長期可靠性，惟尚需要能達成呈對向之電路電極彼此間的更佳的電連接，同時更加提高電路電極間的電特性的長期可靠性。
本發明，係鑑於上述情況所開發者，以提供一種電路連接材料以及採用此種材料之電路構件之連接構造作為目的，該電路連接材料能達成呈對向之電路電極彼此間的良好的電連接，同時能充分提高電路電極間的電特性的長期可靠性。
本發明人等，為解決上述課題而專心檢討之結果，發現產生上述課題之原因特別在於導電粒子的最外層的材質。亦即，習知的電路連接材料所含之導電粒子的最外層為Au的金屬膜，雖然在電路連接時以突起部分貫穿導電粒子與平坦電極之間的接著劑組成物，惟由於Au係一種比較軟的金屬之故，對電路電極而言，導電粒子的最外層發生變形，以致導電粒子難以陷入電路電極中。
並且，本發明人等，為解決上述課題而更專心檢討之結果，發現如將導電粒子的最外層材質改變為較Au為硬的金屬，則可提升連接可靠性，而完成本發明。
本發明提供一種電路連接材料，其係將形成有電路電極之2個電路構件以使該電路電極呈對向的方式進行電連 接用之電路連接材料，其特徵係該電路連接材料含有接著劑組成物與導電粒子，該導電粒子係由有機高分子化合物所構成之核體(nuclide)經以由鎳或鎳合金所構成之金屬層被覆而成、且表面具有複數之突起部，而該核體之平均粒徑係1至4μm，該金屬層之厚度為65至125nm。
上述電路連接材料，係當製作電路構件之連接構造時，介於2個電路構件(以下，視情形而稱為「第1及第2電路構件」)之間，並隔著電路構件而進行加壓。如採用本發明之電路連接材料，相較於導電粒子的最外層為Au的情形，隔著導電粒子而呈對向之電路電極彼此間更能良好地電連接，同時更能提高電路電極間的電特性的長期可靠性。亦即，即使於導電粒子與電路電極之間混入有接著劑組成物的硬化物，藉由導電粒子表面側之複數個突起部之設置，由該導電粒子對接著劑組成物的硬化物所施加之壓力，會相較於無突起部之導電粒子而充分地增大，因此導電粒子的突起部仍然能容易貫穿接著劑組成物的硬化物，而且因某種程度地陷入電路電極中而能增加導電粒子與電路電極之間的接觸面積。又，由於作為導電粒子的最外層之鎳(Ni)或鎳合金係較Au為硬，因此導電粒子的最外層容易陷入於電路電極中，而能增加導電粒子與電路電極之間的接觸面積，結果，能獲得更良好的電連接及電特性的長期可靠性。並且，由於將導電粒子的金屬層厚度設於65至125nm的範圍之結果，連接電阻會穩定。再者，由於將導電粒子的核體的平均粒徑作成1至4μm的範圍而能將 電連接所需要的導電粒子的個數抑制於最小限度，因此可充分保持與鄰接電路之間的絕緣性。因此，可獲得電路電極彼此間的良好的電連接。並且，隔著導電粒子而呈對向之電路電極間的良好的電連接狀態，因藉由接著劑組成物的硬化物而長期間保持之結果，能充分提高電特性的長期信賴性。
上述電路連接材料而言，導電粒子的突起部高度，較佳為50至500nm。又，導電粒子的相鄰之該突起部間的距離，較佳為1000nm以下。由於導電粒子的突起部高度及相鄰之突起部間的距離在上述範圍之故，導電粒子的突起部更能容易貫穿接著劑組成物的硬化物，而將能獲得更良好的電連接及電特性的長期可靠性。
本發明提供一種電路構件之連接構造，其特徵係具備形成有電路電極且該電路電極呈對向配置之2個電路構件，與介於該電路構件之間而使該電路電極進行電連接之電路連接構件，該電路連接構件係本發明之電路連接材料或其硬化物。
由於此種電路構件之連接構造係使用上述電路連接材料所製作，因此可獲得電路電極彼此間的良好的電連接。並且，隔著導電粒子而呈對向之電路電極之間的良好的電連接狀態係藉由接著劑組成物的硬化物而長期間保持，因此可充分提高電特性的長期可靠性。
於上述電路構件之連接構造中，2個電路構件的電路電極之至少一者，較佳為具有由銦-錫氧化物(以下，簡 稱「ITO」)或銦-鋅氧化物(以下，簡稱「IZO」)所構成之最外層。如此，由於電路電極具有由ITO或IZO所構成之最外層，因此相較於具有由Au、Ag、Sn、Pt(鉑)族的金屬、Al或Cr(鉻)等所構成之最外層之電極，有可防止基層金屬氧化之優點。
如採用本發明之電路連接材料，則可達成呈對向之電路電極彼此間的良好的電連接，同時可充分提高電路電極間的電特性的長期可靠性。又，如採用本發明，則可提供一種電路構件之連接構造，該電路構件之連接構造係電路電極間的電特性的長期可靠性十分優異。
[發明之最佳實施形態]
以下，在需要時參考圖式而就本發明之較佳實施形態加以詳細說明。在此，圖式中，對同一要件係附加以同一符號，重複之說明則予以省略。又，上下左右等的位置關係，除非特別註明，否則均係依據圖式所示之位置關係。再者，圖式的尺寸比例並不因圖示之比例而有所限定。
第1圖，係表示本發明之電路構件之連接構造的一例之概略剖面圖。電路構件之連接構造1，係具備有互相呈對向之第1電路構件30及第2電路構件40，而於第1電路構件30與第2電路構件40之間，則設置有連接此等之電路連接構件10。電路連接構件10，係將電路連接材料加以硬化 處理所得者，該電路連接材料含有接著劑組成物、及於表面側具備複數個突起部14之導電粒子12。因而，電路連接構件10，係含有絕緣性物質11及導電粒子12。絕緣性物質11，則由接著劑組成物的硬化物所構成。
第1電路構件30，係具備有電路基板(第1電路基板)31、與於電路基板31的主面31a上形成之電路電極(第1電路電極)32。第2電路構件40，係具備有電路基板41、與於電路基板41的主面41a上所形成之電路電極(第2電路電極)42。
電路基板31、41中，電路電極32、42的表面為平坦。在此，本發明中，「電路電極的表面為平坦」，係指電路電極表面的凹凸為20nm以下之意。
電路電極32、42的厚度，較佳為50nm以上。如電路電極32、42的厚度小於50nm時，則有在電路連接材料中的導電粒子12的表面側之突起部14在進行壓接時貫穿電路電極32、42而與電路基板31、41相接觸之可能性。在此情形，電路電極32、42與導電粒子12間的接觸面積少而有連接電阻上升之傾向。又，電路電極32、42的厚度，係從製造成本等來看，較佳為1000nm以下，更佳為500nm以下。
作為電路電極32、42的材質而言，可例舉：Au、Ag、Sn、Pt族的金屬或銦-錫氧化物(ITO)、銦-鋅氧化物(IZO)、Al、Cr。特別是電路電極32、42的材質為ITO、IZO時，電連接將顯著成為良好，而可發揮本發明之效果。又，電路電極32、42，可以全體由上述物質所構 成，亦可僅最外層由上述物質所構成。
電路基板31、41的材質並不特別加以限制，惟通常為有機絕緣性物質、玻璃或矽。
作為第1電路構件30及第2電路構件40的具體例而言，可舉：半導體晶片、電阻體晶片、電容器晶片等的晶片部件、印刷基板等的基板。此等電路構件30、40中，通常設置有多數個(視情況，可為單數)電路電極(電路端子)32、42。又，電路構件之連接構造的形態而言，亦有IC(積體電路)晶片與晶片裝載基板的連接構造、電氣電路彼此間的連接構造的形態。
又，於第1電路構件30中，可再於第1電路電極32與電路基板31之間設置有絕緣層，於第2電路構件40中，亦可再於第2電路電極42與電路基板41之間設置有絕緣層。絕緣層，祇要是以絕緣材料所構成，則並不加以限制，惟通常係由有機絕緣性物質、二氧化矽或氮化矽所構成。
並且，於該電路構件之連接構造1中，呈對向之電路電極32與電路電極42，係隔著導電粒子12而電連接。亦即，導電粒子12，係與電路電極32、42的雙方直接接觸者。具體而言，導電粒子12的突起部14，在貫穿絕緣性物質11後，與第1電路電極32、第2電路電極42接觸。
因此，電路電極32、42間的連接電阻可充分降低，而能實現電路電極32、42間的良好的電連接。因而可使電路電極32、42間的電流之流動暢通，而能充分發揮電路所具有之功能。
導電粒子12的複數個突起部14之中，較佳為一部分突起部14經陷入於電路電極32或電路電極42中。此時，導電粒子12與突起部14和電路電極32、42之間的接觸面積會較為增加，而可使連接電阻更降低。
於電路構件之電路連接構造1中，較佳為第1電路電極32、第2電路電極42之至少一方的表面積為15000μm2 以下，且於第1電路電極32與第2電路電極42之間之平均導電粒子數為1個以上。在此，平均導電粒子數，係指對每1個電路電極之導電粒子數的平均值之意。此時，可使呈對向之電路電極32、42間的連接電阻更充分地降低。
又，如平均導電粒子數為3個以上時，則更可達成良好的連接電阻。此乃因呈對向之電路電極32、42間的連接電阻會充分降低之故。又，如於電路電極32、42間之平均導電粒子數為1個以下時，則連接電阻可能過高，以致電子電路不能正常運作。
以下，就電路連接構件10加以詳細說明。電路連接構件10，係形成為薄膜狀，而如上所述，係藉由將電路連接材料之硬化處理而製得者，該電路連接材料含有於表面側具有突起部14之導電粒子12、與接著劑組成物。
(導電粒子)
首先，就導電粒子12之構成加以詳細說明。導電粒子12，係由有導電性之粒子(本體部分)、與於此粒子表面所形成之複數個突起部14所構成。在此，複數個突起部14 ，係由具有導電性之金屬所構成。第2圖，係表示本發明之電路連接材料中所含之導電粒子各種形態之剖面圖。
第2圖(a)中所示之導電粒子12，係由有機高分子化合物所構成之核體21、與於核體21的表面上所形成之金屬層22所構成。核體21，係由中核部21a與於中核部21a的表面上所形成之突起部21b所構成。金屬層22，係於其表面側，具有複數個突起部14。金屬層22係覆蓋於核體21，而在對應於突起部21b之位置突出，該突出之部分即成為突起部14。
核體21，係由於相較於由金屬所構成之核體為成本低，同時對熱膨脹或壓接接合時之尺寸變化之彈性變形範圍廣泛，因此作為電路連接材料更為合適。
構成核體21的中核部21a之有機高分子化合物而言，可例舉：丙烯酸樹脂、苯乙烯樹脂、苯并胍胺樹脂、聚矽氧樹脂、聚丁二烯樹脂或此等的共聚物，亦可使用經將此等交聯者。
核體21的中核部21a的平均粒徑，較佳為1至4μm者，更佳為2至4μm者，再佳為2.5至3.5μm者。如平均粒徑小於1μm時，則有發生粒子的二次凝聚，而與相鄰接之電路間的絕緣性不足夠之傾向。另一方面，如平均粒徑大於4μm時，則由於電路連接時排除接著劑組成物之面積會增大，因此有與相鄰接之電路間的絕緣性不足夠的傾向。在此，本說明書中之核體21的平均粒徑，係指中核部21a的平均粒徑之意者，如使用粒度分佈測定裝置、或以 電子顯微鏡觀察導電粒子的剖面，即可測定。
構成核體21的突起部21b之有機高分子化合物而言，可例舉：丙烯酸樹脂、苯乙烯樹脂、苯并胍胺樹脂、聚矽氧樹脂、聚丁二烯樹脂或此等的共聚物，亦可使用經將此等交聯者。構成突起部21b之有機高分子化合物，可為與構成中核部21a之有機高分子化合物相同或不相同。
核體21，可藉由使複數個突起部21b吸附於中核部21a表面而形成，該突起部21b具有較中核部21a為小的直徑。使突起部21b吸附於中核部21a表面之方法而言，可例舉：將雙方或一方的粒子以矽烷、氧化鋁、鈦等各種偶合劑(coupling agent)及接著劑的稀釋溶液表面處理後，混合兩者而使其附著之方法。
金屬層22的材質而言，有Ni或Ni合金，而Ni合金而言，可例舉：Ni-B(鎳-硼)、Ni-W(鎳-鎢)、Ni-B(鎳-硼)、Ni-W-Co(鎳-鎢-鈷)、Ni-Fe(鎳-鐵)以及Ni-Cr(鎳-鉻)。由於較硬且容易陷入電路電極32、42中，因此較佳為Ni。金屬層22，可藉由將此等金屬採用無電解電鍍法來鍍覆於核體21上而形成。無電解電鍍法，可分為大的分批方式及連續滴下方式，惟採用任一方式均可形成金屬層22。
金屬層22的厚度(鍍覆厚度)，較佳為65至125nm，更佳為75至110nm，再佳為80至100nm。藉由將金屬層22的厚度設於此種範圍，則可將電路電極32、42間的連接電阻作成更良好者。在此，本說明書中之導電粒子的金屬層 22的厚度，係指不含突起部14之金屬層部分的平均厚度之意，可使用電子顯微鏡測定導電粒子的剖面。
金屬層22的厚度小於65nm時，則由於鍍覆厚度較薄，因此有連接電阻增大之傾向，如大於125nm，則在電鍍時於導電粒子間發生凝結，而有於相鄰接之電路電極間發生短路之傾向。
又，於導電粒子12中，金屬層22從核體21完全剝離之粒子的混入率，在粒子25萬個中較佳為小於5%，更佳為小於1.0%，再佳為小於0.1%，如將金屬層22從核體21完全剝離之粒子的混入率設於此種範圍時，則可使電路電極32、42間確實地導通。金屬層22從核體21完全剝離之粒子的混入率為5%以上時，則由於與導電無關之粒子存在於電極上，因此有連接電阻增大之傾向。
本發明中之導電粒子12，有部分地露出核體21之情況。從連接可靠性來看，對核體21的表面積之金屬層22的被覆率，較佳為在70%以上，更佳為80至100%。藉由將金屬層22的被覆率設於此種範圍，則可將電路電極32、42間的連接電阻作成更良好者。如金屬層22的被覆率小於70%時，則由於導電粒子表面的導電面積變小，因此有連接電阻增大之傾向。
導電粒子12的突起部14的高度H，較佳為50至500nm，更佳為65至500nm，再佳為100至300nm。又，相鄰接之突起部14的距離S，較佳為1000nm以下，更佳為500nm以下。
又，相鄰接之突起部14間的距離S，為不使接著劑組成物進入導電粒子12與電路電極32、42之間而使導電粒子12與電路電極32、42充分接觸起見，較佳為至少50nm以上。在此，導電粒子12的突起部14的高度H及相鄰接之突起部14間的距離S，係可使用電子顯微鏡加以測定。
另外，導電粒子12中，如第2圖(b)所示，核體21可僅以中核部21a所構成。換言之，於第2圖(a)所示之導電粒子12中，可不設置突起部21b。第2圖(b)所示之導電粒子12，可藉由將核體21a的表面進行金屬電鍍而於核體21a表面形成金屬層22，即可製得。
在此，說明用以形成突起部14之電鍍方法。例如，突起部14，在進行電鍍反應當中，可藉由追加較最初所使用之電鍍液之濃度為高的電鍍液以使電鍍液濃度為不均勻而形成。又，調節電鍍液的pH，例如，將鎳電鍍液的pH設為6，即可製得瘤狀的金屬層，亦即，具有突起部14之金屬層22(參考：望月等人者，表面技術，第48卷，第4章，第429頁至第432頁，1997年版)。又，如作為對電鍍液的安定性有助益之錯合劑(complexing agent)而採用甘胺酸(glycine)時，可產生平滑的金屬層(被膜)，相對地，如採用酒石酸或DL(外消旋)-蘋果酸時，可製得瘤狀的被膜，亦即具有突起部14之金屬層22(參考：荻原等人者，非晶形電鍍，第36卷，第35頁至第37頁，1994年版；荻原等人者，電路封裝學會誌，第10卷，第3章，第148頁至第152頁，1995年版)。
金屬層22，可為由單一的金屬層所構成者，亦可為由複數個金屬層所構成者。
(接著劑組成物)
其次，就接著劑組成物加以詳細說明。接著劑組成物，具有絕緣性及接著性。接著劑組成物而言，較佳為(1)含有環氧樹脂、及環氧樹脂的潛在性硬化劑之組成物、(2)含有自由基聚合性物質、及因加熱而產生游離自由基之硬化劑之組成物、或者(1)與(2)的混合組成物。
首先，就(1)含有環氧樹脂、及環氧樹脂的潛在性硬化劑之組成物加以說明。上述環氧樹脂而言，可例舉：雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、雙酚A酚醛清漆型環氧樹脂、雙酚F酚醛清漆型環氧樹脂、脂環式環氧樹脂、縮水甘油酯型環氧樹脂、縮水甘油基胺型環氧樹脂、海因(hydantoin)型環氧樹脂、異三聚氰酸酯型環氧樹脂、鏈狀脂肪族環氧樹脂。此等環氧樹脂可為經鹵素化者，亦可為經加氫者。此等環氧樹脂，可併用2種以上。
上述潛在性硬化劑而言，祇要是能使環氧樹脂硬化者即可。如此的潛在性硬化劑而言，可例舉：陰離子聚合性的觸媒型硬化劑、陽離子聚合性的觸媒型硬化劑、加成聚合(polyaddition)型的硬化劑。此等可以單獨或作為2種以上的混合物使用。此中，從速硬化性上優異、不需要考 慮化學當量的方面來看，較佳為陰離子或陽離子聚合性的觸媒型硬化劑。
陰離子或陽離子聚合性的觸媒型硬化劑而言，可例舉：咪唑系、醯肼系、三氟化硼-胺錯合物、鋶鹽、胺醯亞胺、二胺基馬來腈、三聚氰胺及其衍生物、多元胺的鹽、二氰基二醯胺，而此等的改性物(modified product)亦可使用。加成聚合型的硬化劑而言，可例舉：多元胺類、聚硫醇、多酚、酸酐。
如作為陰離子聚合型的觸媒型硬化劑而調配三級胺類或咪唑類時，環氧樹脂係以160℃至200℃程度的中等溫度按數10秒鐘至數小時程度的加熱即會硬化。故，可使用時間(pot life)會較長，因此很合適。
陽離子聚合型的觸媒型硬化劑而言，較佳為例如，藉由能量線照射而使環氧樹脂硬化之感光性鎓鹽(主要採用芳香族重氮鎓鹽、芳香族鋶鹽等)。
又，除能量線照射以外，藉由加熱而使其活性化並使環氧樹脂硬化者而言，有脂肪族鋶鹽等。由於此種硬化劑，具有快速硬化(fast-cruing)之特徵，因此很合適。
經將此等潛在性硬化劑(potential hardner)，使用聚胺酯系、聚酯系等的高分子物質或鎳、銅等的金屬薄膜以及矽酸鈣等的無機物加以被覆後使其微膠囊(micro capsule)化者，由於能延長可使用時間之故很合適。
接著，就含有(2)自由基聚合性物質，及藉由加熱而產生游離自由基之硬化劑之組成物加以說明。
自由基聚合性物質，係具有藉由自由基而聚合之官能基之物質。此種自由基聚合性物質而言，可例舉：丙烯酸酯(包含相對應之甲基丙烯酸酯。以下與此處相同)化合物、丙烯醯氧基(包含相對應之甲基丙烯醯氧基。以下與此處相同)化合物、馬來醯亞胺化合物、檸康醯亞胺樹脂、納迪克醯亞胺(Nadiimide)樹脂。自由基聚合性物質可以單體或低聚物的狀態使用，亦能併用單體與低聚物。
上述丙烯酸酯化合物的具體例而言，可例舉：丙烯酸甲酯、丙烯酸乙酯、丙烯酸異丙酯、丙烯酸異丁酯、乙二醇二丙烯酸酯、二乙二醇二丙烯酸酯、三羥甲基丙烷三丙烯酸酯、四羥甲基甲烷四丙烯酸酯、2-羥基-1,3-二丙烯醯氧丙烷、2,2-雙[4-(丙烯醯氧甲氧)苯基]丙烷、2,2-雙[4-(丙烯醯氧聚乙氧)苯基]丙烷、丙烯酸二環戊烯基酯、丙烯酸三環癸烯基酯、異三聚氰酸參(丙烯醯氧乙基)酯、胺基甲酸酯丙烯酸酯。此等化合物可以單獨或混合2種以上之方式使用。
又，需要時，亦可適當使用氫醌、甲醚氫醌類等的聚合抑制劑(polymerization inhibitor)。再者，從提升耐熱性來看，丙烯酸酯化合物較佳為具有選自二環戊烯基、三環癸烯基以及三環(triazine ring)所組成群中之至少1種取代基。
上述馬來醯亞胺化合物，係分子中含有馬來醯亞胺基至少2個以上者。此種馬來醯亞胺而言，可例舉：1-甲基-2,4-雙馬來醯亞胺苯、N,N’-間伸苯基雙馬來醯亞胺、 N,N’-對伸苯基雙馬來醯胺、N,N’-間甲苯(toluylene)雙馬來醯亞胺、N,N’-4,4-聯伸苯雙馬來醯亞胺、N,N’-4,4-(3,3’-三甲基聯伸苯)雙馬來醯亞胺、N,N’-4,4-(3,3’-二甲基二苯基甲烷)雙馬來醯亞胺、N,N’-4,4-(3,3’-二乙基二苯基甲烷)雙馬來醯亞胺、N,N’-4,4-二苯基甲烷雙馬來醯亞胺、N,N’-4,4-二苯基丙烷雙馬來醯亞胺、N,N’-3,3’-二苯基碸雙馬來醯亞胺、N,N’-4,4-二苯基醚雙馬來醯亞胺、2,2-雙(4-(4-馬來醯亞胺苯氧)苯基)丙烷、2,2-雙(3-第二丁基-4,8-(4-馬來醯亞胺苯氧)苯基)丙烷、1,1-雙(4-(4-馬來醯亞胺苯氧)苯基)癸烷、4,4’-亞環己基-雙(1-(4-馬來醯亞胺苯氧)-2-環己基苯、2,2-雙(4-(4-馬來醯亞胺苯氧)苯基)六氟丙烷。此等化合物可以單獨或混合2種以上之方式使用。
上述檸康醯亞胺樹脂，係使分子中具有檸康醯亞胺基至少1個之檸康醯亞胺化合物聚合所構成者。檸康醯亞胺化合物而言，可例舉：苯基檸康醯亞胺、1-甲基-2,4-雙檸康醯亞胺苯、N,N’-間伸苯基雙檸康醯亞胺、N,N’-對伸苯基檸康醯亞胺、N,N’-4,4-聯伸苯雙檸康醯亞胺、N,N’-4,4-(3,3-二甲基聯伸苯基)雙檸康醯亞胺、N,N’-4,4-(3,3-二甲基二苯基甲烷)雙檸康醯亞胺、N,N’-4,4-(3,3-二乙基二苯基甲烷)雙檸康醯亞胺、N,N’-4,4-二苯基甲烷雙檸康醯亞胺、N,N’-4,4-二苯基丙烷雙檸康醯亞胺、N,N’-4,4-二苯基醚雙檸康醯亞胺、N,N’-4,4-二苯基碸雙檸康醯亞胺、2,2-雙(4-(4-檸康醯亞胺苯氧)苯基)丙 烷、2,2-雙(3-第二丁基-3,4-(4-檸康醯亞胺苯氧)苯基)丙烷、1,1-雙(4-(4-檸康醯亞胺苯氧)苯基)癸烷、4,4’-亞環己基-雙(1-(4-檸康醯亞胺苯氧)苯氧)-2-環己基苯、2,2-雙(4-(4-檸康醯亞胺苯氧)苯基)六氟丙烷。此等化合物可以單獨或混合2種以上之方式使用。
上述納迪克醯亞胺樹脂，係將分子中具有至少1個納迪克醯亞胺基之納迪克醯亞胺化合物加以聚合所構成者。納迪克醯亞胺化合物而言，可例舉：苯基納迪克醯亞胺、1-甲基-2,4-雙納迪克醯亞胺苯、N,N’-間伸苯基雙納迪克醯亞胺、N,N’-對伸苯基雙納迪克醯亞胺、N,N’-4,4-聯伸苯基雙納迪克醯亞胺、N,N’-4,4-(3,3-二甲基聯伸苯基)雙納迪克醯亞胺、N,N’-4,4-(3,3-二甲基二苯基甲烷)雙納迪克醯亞胺、N,N’-4,4-(3,3-二乙基二苯基甲烷)雙納迪克醯亞胺、N,N’-4,4-二苯基甲烷雙納迪克醯亞胺、N,N’-4,4-二苯基丙烷雙納迪克醯亞胺、N,N’-4,4-二苯基醚雙納迪克醯亞胺、N,N’-4,4-二苯基碸雙納迪克醯亞胺、2,2-雙(4-(4-納迪克醯亞胺苯氧)苯基)丙烷、2,2-雙(3-第二丁基-3,4-(4-納迪克醯亞胺苯氧)苯基)丙烷、1,1-雙(4-(4-納迪克醯亞胺苯氧)苯基)癸烷、4,4’-亞環己基-雙(1-(4-納迪克醯亞胺苯氧)苯基)-2-環己基苯、2,2-雙(4-(4-納迪克醯亞胺苯氧)苯基)六氟丙烷。此等化合物可以單獨或混合2種以上之方式使用。
又，於上述自由基聚合性物質中，較佳為併用具有可以下述化學式(I)表示之磷酸酯構造之自由基聚合性物 質。此時，由於對金屬等的無機物表面之接著強度會改善，因此對電路電極彼此間的接著很合適。
式中，n表示1至3的整數。
具有上述磷酸酯構造之自由基聚合性物質，如使用磷酸酐與(甲基)丙烯酸2-羥基乙酯進行反應，即可製得。作為具有磷酸酯構造之自由基聚合性物質，具體而言，有：單(2-甲基丙烯醯氧乙基)酸性磷酸酯、二(2-甲基丙烯醯氧乙基)酸性磷酸酯。此等化合物可以單獨或混合2種以上之方式使用。
具有以上述化學式(I)表示之磷酸酯構造之自由基聚合性物質的調配量，係相對於自由基聚合性物質和因需要所調配之薄膜形成材料的合計100質量份，較佳為0.01至50質量份，更佳為0.5至5質量份。
上述自由基聚合性物質，亦可與烯丙基丙烯酸酯併用。此時，烯丙基丙烯酸酯的調配量，係相對於自由基聚合性物質和因需要所調配之薄膜形成材料的合計100質量份，較佳為0.1至10質量份，更佳為0.5至5質量份。
藉由加熱而產生游離自由基之硬化劑，係因加熱而分解後產生游離自由基之硬化劑。此種硬化劑而言，可例舉 ：過氧化化合物、偶氮系化合物。此種硬化劑，係視作為目的之連接溫度、連接時間、可使用時間等而適當加以選定。從高反應性及提升可使用時間之觀點來看，較佳為半衰期(half-value period)10小時的溫度在40℃以上，且半衰期1分鐘的溫度在180℃以下的有機過氧化物，更佳為半衰期10小時的溫度在60℃以上，且半衰期1分鐘的溫度在170℃以下的有機過氧化物。
上述硬化劑的調配量，如將連接時間設為25秒鐘以下時，為獲得充分的反應率起見，係相對於自由基聚合性物質和因需要所調配之薄膜形成材料的合計100質量份，較佳為2至10質量份程度，更佳為4至8質量份。在此，如不限定連接時間時的硬化劑的調配量，係相對於自由基聚合性物質和因需要所調配之薄膜形成材料的合計100質量份，較佳為0.05至20質量份，更佳為0.1至10質量份。
作為藉由加熱而產生游離自由基之硬化劑，更具體而言，可例舉：二醯基過氧化物、過氧化二碳酸酯、過氧化酯過氧化縮酮、二烷基過氧化物、氫過氧化物、甲矽烷基過氧化物。
又，從抑制電路電極32、42的腐蝕之觀點來看，硬化劑，較佳為硬化劑中所含有之氯離子或有機酸的濃度在5000ppm以下，更佳為加熱分解後產生之有機酸少者。
作為此種硬化劑，具體而言，可例舉：過氧化酯、二烷基過氧化物、氫過氧化物、甲矽烷基過氧化物等，更佳為選自能獲得高反應性之過氧化酯。在此，上述硬化劑， 可適當混合使用。
過氧化酯而言，可例舉：過氧化新癸酸枯基酯(Cumyl peroxyneodecauoate)、過氧化新癸酸1,1,3,3-四甲基丁基酯、過氧化新癸酸1-環己基-1-甲基乙基酯、過氧化新癸酸第三己基酯、過氧化三甲基乙酸第三丁基酯(pivalate)、過氧化2-乙基己酸1,1,3,3-四甲基丁基酯、2,5-二甲基-2,5-二(2-乙基己醯過氧化)己烷、過氧化2-乙基己酸1-環己基-1-甲基乙基酯、過氧化2-乙基己酸第三己基酯、過氧化2-乙基己酸第三丁基酯、過氧化異丁酸第三丁基酯、1,1-雙(第三丁基過氧化)環己烷、過氧化異丙基單碳酸第三己基酯、過氧化-3,5,5-三甲基己酸第三丁基酯、過氧化月桂酸第三丁基酯、2,5-二甲基-2,5-二(間甲苯醯基(toluoyl)過氧化)己烷、過氧化異丙基單碳酸第三丁基酯、過氧化2-乙基己基單碳酸第三丁基酯、過氧化苯甲酸第三己基酯、過氧化乙酸第三丁基酯。
二烷基過氧化物而言，可例舉：α,α’-雙(第三丁基過氧化)二異丙基苯、二枯基過氧化物(dicumyl peroxide)、2,5-二甲基-2,5-二(第三丁基過氧化)己烷、過氧化第三丁基異丙苯(t-butyl cumyl peroxide)。
氫過氧化物而言，二異丙基苯氫過氧化物、氫過氧化枯烯(cumene hydroperoxide)。
二醯基過氧化物而言，可例舉：異丁基過氧化物、2,4-二氯苯甲醯過氧化物、3,5,5-三甲基己醯過氧化物、辛醯過氧化物、月桂醯過氧化物、硬脂醯過氧化物、琥珀 醯過氧化物、苯甲醯過氧化甲苯、苯甲醯過氧化物。
過氧化二碳酸酯而言，可例舉：二正丙基過氧化二碳酸酯、二異丙基過氧化二碳酸酯、雙(4-第三丁基環己基)過氧化二碳酸酯、二-2-乙氧甲氧過氧化二碳酸酯、二(2-乙基己基過氧化)二碳酸酯、二甲氧丁基過氧化二碳酸酯、二(3-甲基-3-甲氧丁基過氧化)二碳酸酯。
過氧化縮酮而言，可例舉：1,1-雙(第三己基過氧化)-3,3,5-三甲基環己烷、1,1-雙(第三己基過氧化)環己烷、1,1-雙(第三丁基過氧化)-3,3,5-三甲基環己烷、1,1-(第三丁基過氧化)環十二烷、2,2雙(第三丁基過氧化)癸烷。
甲矽烷基過氧化物而言，可例舉：第三丁基三甲基甲矽烷基過氧化物、雙(第三丁基)二甲基甲矽烷基過氧化物、第三丁基三乙烯基甲矽烷基過氧化物、雙(第三丁基)二乙烯基甲矽烷基過氧化物、參(第三丁基)乙烯基甲矽烷基過氧化物、第三丁基三烯丙基甲矽烷基過氧化物、雙(第三丁基)二烯丙基甲矽烷基過氧化物、參(第三丁基)烯丙基甲矽烷基過氧化物。
此等硬化劑，可以單獨或混合2種以上之方式使用，亦可混合分解促進劑、抑制劑等使用。又，亦可將此硬化劑使用聚胺酯系、聚酯系的高分子物質等加以被覆後使其微膠囊化。由於經微膠囊化之硬化劑可延長可使用時間，因此很合適。
接著劑組成物中，需要時可添加薄膜形成材料使用。 薄膜形成材料，係指當使液狀物固態化而將構成組成物作成薄膜形狀時，其薄膜的操作處理容易，並賦予不會容易裂開、破裂、或發黏等機械特性，而可在通常的狀態(常溫常壓)下作為薄膜來操作處理者之意。
薄膜形成材料而言，可例舉：苯氧基樹脂、聚乙烯醇縮甲醛樹脂、聚苯乙烯樹脂、聚乙烯醇縮丁醛樹脂、聚酯樹脂、聚醯胺樹脂、二甲苯樹脂、聚胺酯樹脂。其中，由於接著性、相溶性、耐熱性、機械性強度優異，因此較佳為苯氧基樹脂。
苯氧基樹脂，係藉由使2官能苯酚類與表鹵醇(epihalo hydrin)進行反應至高分子化、或使2官能環氧樹脂與2官能苯酚類進行加成聚合，即可製得之樹脂。苯氧基樹脂，係例如，使2官能苯酚類1莫耳與表鹵醇0.985至1.015莫耳，在鹼金屬氫氧化物等的觸媒存在下，於非反應性溶劑中，在40至120℃的溫度下進行反應，即可製得。
又，苯氧基樹脂而言，從樹脂的機械特性或熱特性的觀點來看，特佳為將2官能性環氧樹脂及2官能性苯酚類的調配當量比設為環氧基/苯酚氫氧基=1/0.9至1/1.1，而在鹼金屬化合物、有機磷系化合物、環狀胺系化合物等的觸媒的存在下，沸點在120℃以上的醯胺系、醚系、酮系、內酯系、醇系等的有機溶劑中依反應固體成分在50質量份以下的條件下加熱為50至200℃以使其進行加成聚合反應所製得者。
上述2官能環氧樹脂而言，可例舉：雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚AD型環氧樹脂、雙酚S型環氧樹脂、聯苯二縮水甘油基醚、甲基取代聯苯二縮水甘油基醚。
2官能苯酚類，係具有2個苯酚性氫氧基者。2官能苯酚類而言，可例舉：氫醌類、雙酚A、雙酚F、雙酚AD、雙酚S、雙酚茀、甲基取代雙酚茀、二羥基聯苯、甲基取代二羥基聯苯等的雙酚類。
苯氧基樹脂，可為被自由基聚合性的官能基、或其他反應性化合物所改性(例如，環氧改性)。苯氧基樹脂，可以單獨或混合2種以上之方式使用。
接著劑組成物，可再含有將丙烯酸、丙烯酸酯、甲基丙烯酸酯以及丙烯腈之中至少一個作為單體成分之聚合物或共聚物。在此，由於應力緩和(stress relaxation)方面優異，因此較佳為併用含有縮水甘油醚基之縮水甘油基丙烯酸酯、或含有甲基丙烯酸縮水甘油酯之共聚物系丙烯酸類橡膠。此等丙烯酸類橡膠的重量平均分子量，從提高接著劑的凝聚力方面而言，較佳為20萬以上。
導電粒子12的調配量，係相對於接著劑組成物100體積份，較佳為0.1至30體積份，而其調配量則視其用途而有所不同。從防止因過剩的導電粒子12所引起之電路電極的短路的觀點來看，導電粒子12的調配量，更佳為0.1至10體積份。
電路連接材料中，亦可再含有橡膠微粒子、填充劑、 軟化劑、促進劑、老化防止劑、著色劑、阻燃劑、觸變劑(thixotropic agent)、偶合劑、苯酚類樹脂、三聚氰胺樹脂、異氰酸酯類。
橡膠微粒子，祇要是具有所調配之導電粒子12的平均粒徑的2倍以下的平均粒徑，且具有導電粒子12及接著劑組成物在室溫下的儲藏彈性率的1/2以下的儲藏彈性率者即可。特別是，橡膠微粒子的材質係屬於聚矽氧、丙烯酸乳液、SBR(苯乙烯-丁二烯共聚橡膠)、NBR(丙烯腈-丁二烯共聚橡膠)、聚丁二烯橡膠之微粒子時，則以單獨或混合2種以上之方式使用較合適。經三維交聯之此等橡膠微粒子，係耐溶劑性優異者，容易分散於接著劑組成物中。
使電路連接材料中含有填充劑時，則由於連接可靠性等會提升，因此很合適。填充劑，祇要是其最大直徑在導電粒子12的粒徑的1/2以下，則可使用。如填充劑的粒徑較導電粒子為大時，則有可能妨礙導電粒子的扁平化。又，如欲併用不具有導電性之粒子時，祇要是填充劑的直徑，在不具有導電性之粒子的直徑以下，則可使用。
填充劑的調配量，係相對於接著劑組成物100體積份，較佳為5至60體積份。調配量大於60體積份時，則有連接可靠性提升效果會飽和之傾向，而小於5體積份時，則有填充劑添加的效果不足夠之傾向。
上述偶合劑而言，由於含有乙烯基、丙烯酸基、環氧基或異氰酸酯基之化合物，可提升接著性，因此很合適。
在此，薄膜狀的電路連接材料，可藉由在支撐體(PET(聚對苯二甲酸乙二醇酯)上使用塗刷裝置(未圖示)而塗佈上述電路連接材料，並實施既定時間之熱風乾燥來製作。
[電路構件之連接構造的製造方法]
其次，就上述之電路構件之連接構造1的製造方法加以說明。
首先，準備：上述之具有第1電路電極32之第1電路構件30、及具有第2電路電極42之第2電路構件40、以及電路連接材料。電路連接材料而言，例如，準備經成形為薄膜狀之電路連接材料(以下，簡稱薄膜狀電路連接材料)。薄膜狀電路連接材料，係含有上述接著劑組成物、及導電粒子12者。薄膜狀電路連接材料的厚度，較佳為10至50μm。
其次，於第1電路構件30之上，載置薄膜狀電路連接材料。然後，將第2電路構件40，按第1電路電極32與第2電路電極42能呈對向之方式，載置於薄膜狀電路連接材料之上。由此，能使薄膜狀電路連接材料介於第1電路構件30與第2電路構件40之間。此時，薄膜狀電路連接材料係薄膜狀，因此操作處理很容易。因此，如採用此種薄膜狀電路連接材料，則在連接第1電路構件30與第2電路構件40時，可容易介於其等之間，而容易實施第1電路構件30與第2電路構件40之間的連接作業。
其次，隔著第1電路構件30及第2電路構件40而在加熱薄膜狀電路連接材料之下加壓以實施硬化處理，於第1及第2電路構件30、40之間形成電路連接構件10。硬化處理，可依一般性方法實施，其方法則視接著劑組成物而適當選擇。此時，如電路連接材料中的導電粒子12的最外層係Ni(鎳)時，由於Ni係較Au(金)為硬，因此相較於最外層係Au之導電粒子，突起部14將能更深入第1或第2電路電極32、42中，結果導電粒子12與電路電極32、42之間的接觸面積即增加。又，如將導電粒子的金屬層厚度作成65至125nm的範圍，連接電阻即會穩定。並且，藉由使電路連接材料進行硬化處理，接著劑組成物即硬化而實現對第1電路構件30及第2電路構件40之高度的接著強度，並能長期間保持導電粒子12與第1及第2電路電極32、42確實地接觸之狀態。
因而，不管第1及/或第2電路電極32、42表面有無凹凸，均可充分降低呈對向之第1及第2電路電極32、42間的連接電阻，而能達成第1電路電極32與第2電路電極42之間的良好的電連接，同時可充分提高第1及第2電路電極32、42間的電特性的長期可靠性。
另外，於上述實施形態中，雖然係使用薄膜狀電路連接材料以製造電路構件之連接構造1，惟亦可不用薄膜狀電路連接材料而使用形成為薄膜狀之前的電路連接材料。在此情形，祇要是使電路連接材料溶解於溶劑中，並將此溶液塗佈於第1電路構件30或第2電路構件40的任一者並加 以乾燥，即可使其介於第1及第2電路構件30、40間。
以上，經就本發明之較佳的實施形態加以說明，惟本發明並不因此而有所限制。
 [實施例]
以下，將依據實施例而具體說明本發明內容，惟本發明並不因實施例而有所限定。
[導電粒子之製作]
(核體之製作)
改變四羥甲基甲烷四丙烯酸酯、二乙烯苯以及苯乙烯單體的混合比，並作為聚合引發劑而使用苯甲醯過氧化物進行懸浮聚合(suspension polymerization)，並將所得聚合物加以分級之結果，製得具有3μm的平均粒徑之核體。
(導電粒子No.1之製作)
對上述核體的表面，實施無電解Ni電鍍處理，以製作具有均勻的厚度100nm的Ni層(金屬層)之導電粒子No.1。
(導電粒子No.2之製作)
於導電粒子No.1上將Au按25nm厚度實施取代電鍍( substitution plating)，以形成具有均勻厚度的Au層，而製作導電粒子No.2。
(導電粒子No.3之製作)
調整對上述核體表面實施無電解Ni電鍍處理時的電鍍液的饋入量、處理溫度以及時間並改變電鍍厚度，藉以於上述核體表面形成Ni電鍍的突起部。製成Ni層的目標厚度40至60nm的導電粒子No.3。
(導電粒子No.4之製作)
調整對上述核體表面實施無電解Ni電鍍處理時的電鍍液的饋入量、處理溫度以及時間並改變電鍍厚度，藉以於上述核體表面形成Ni電鍍的突起部。製成Ni層的目標厚度60至80nm的導電粒子No.4。
(導電粒子No.5之製作)
調整對上述核體表面實施無電解Ni電鍍處理時的電鍍液的饋入量、處理溫度以及時間並改變電鍍厚度，藉以於上述核體表面形成Ni電鍍的突起部。製成Ni層的目標厚度90至100nm的導電粒子No.5。
(導電粒子No.6之製作)
調整對上述核體表面實施無電解Ni電鍍處理時的電鍍液的饋入量、處理溫度以及時間並改變電鍍厚度，藉以於 上述核體表面形成Ni電鍍的突起部。製成Ni層的目標厚度110至130nm的導電粒子No.6。
(導電粒子No.7之製作)
調整對上述核體表面實施無電解Ni電鍍處理時的電鍍液的饋入量、處理溫度以及時間並改變電鍍厚度，藉以於上述核體表面形成Ni電鍍的突起部。製成Ni層的目標厚度130至150nm的導電粒子No.7。
(導電粒子No.8之製作)
於導電粒子No.5上將Au按25nm厚度實施取代電鍍，以形成具有複數個突起部之Au層，以製作導電粒子No.8。
就依上述方式製作之導電粒子No.1至8，使用電子顯微鏡[日立製作所(股)、S-800]加以觀察，並測定金屬層厚度、突起部高度以及相鄰接之突起部間的距離。將其結果表示於表1中。
(苯氧基樹脂之調製)
將苯氧基樹脂(重量平均分子量：45000、Union Carbide(股)公司製，商品名「PKHC」)50g，溶解於甲苯/乙酸乙酯=50/50(質量比)的混合溶劑中，以調製固體成分40質量%的苯氧基樹脂溶液。
(聚胺酯丙烯酸酯之合成)
將聚己內酯二醇(重量平均分子量：800)400質量份、丙烯酸2-羥基丙酯131質量份，作為觸媒之二丁基錫二月桂酸酯0.5質量份以及作為聚合抑制劑之氫醌單甲基醚1.0質量份，在攪拌之下加熱為50℃並加以混合。接著，對於混合液中滴下異佛爾酮二異氰酸酯222質量份，再在攪拌之下升溫為80℃以實施聚胺酯化反應。經確認異氰酸酯基的反應率成為99%以上後，降低反應溫度而製得聚胺酯丙烯酸酯。
[電路連接材料之製作]
(電路連接材料A之製作)
將上述苯氧基樹脂溶液(固體成分含量：50g)125g、上述聚胺酯丙烯酸酯49g、磷酸酯型丙烯酸酯1g以及作為因加熱而產生游離自由基之硬化劑之第三己基過氧化-2-乙基己酸酯5g，加以混合而製得接著劑組成物。對所製得接著劑組成物100質量份中，使導電粒子No.4分散2.3質 量份以調製電路連接材料。
然後，使用塗刷裝置而將此電路連接材料塗佈於單面經表面處理之厚度50μm的PET薄膜上，在70℃下熱風乾燥3分鐘後，於PET薄膜上製得厚度18μm的薄膜狀電路連接材料A。
(電路連接材料B之製作)
除取代導電粒子No.4而採用導電粒子No.5為3.0質量份以外，其餘則按與電路連接材料A同樣方式，製作厚度18μm的薄膜狀電路連接材料B。
(電路連接材料C之製作)
除取代導電粒子No.4而採用導電粒子No.6為3.6質量份以外，其餘則按與電路連接材料A同樣方式，製作厚度18μm的薄膜狀電路連接材料C。
(電路連接材料D之製作)
除取代導電粒子No.4而採用導電粒子No.3為1.8質量份以外，其餘則按與電路連接材料A同樣方式，製作厚度18μm的薄膜狀電路連接材料D。
(電路連接材料E之製作)
除取代導電粒子No.4而採用導電粒子No.7為4.0質量份以外，其餘則按與電路連接材料A同樣方式，製作厚度 18μm的薄膜狀電路連接材料E。
(電路連接材料F之製作)
除取代導電粒子No.4而採用導電粒子No.1為3.0質量份以外，其餘則按與電路連接材料A同樣方式，製作厚度18μm的薄膜狀電路連接材料F。
(電路連接材料G之製作)
除取代導電粒子No.4而採用導電粒子No.2為3.0質量份以外，其餘則按與電路連接材料A同樣方式，製作厚度18μm的薄膜狀電路連接材料G。
(電路連接材料H之製作)
除取代導電粒子No.4而採用導電粒子No.8為3.0質量份以外，其餘則按與電路連接材料A同樣方式，製作厚度18μm的薄膜狀電路連接材料H。
[電路構件之連接構造之製作]
(實施例1)
作為第1電路構件，準備具有由聚醯亞胺薄膜(厚度38μm)、與Sn(錫)電鍍Cu(銅)箔(厚度8μm)所構成之2層構造之柔性印刷電路板(以下，簡稱FPC)。該FPC的電路，係作成線(line)寬幅18μm及節距(pitch)50μm。
其次，作為第2電路構件而準備於表面具備有ITO電路電極(厚度50nm、表面電阻<20 Ω)之玻璃基板(厚度1.1mm)。該第2電路構件的電路，係作成線寬幅25μm及節距50μm。
然後，於第2電路構件上貼附經裁斷為既定的尺寸(1.5×30mm)之電路連接材料A，依70℃、1.0MPa的條件加熱、加壓3秒鐘，並加以臨時連接。接著，在剝離PET薄膜後，以藉由FPC與第2電路構件來夾住電路連接材料A之方式配置FPC，以實施FPC的電路與第2電路構件的電路的位置對準。然後，依170℃、3MPa，10秒鐘的條件從FPC上方實施加熱、加壓，並進行FPC與第2電路構件的真連接。如此方式，製作電路構件之連接構造。
(實施例2)
作為第1電路構件而準備與實施例1同樣的FPC。接著，作為第2電路構件而準備於表面具備有IZO電路電極(厚度50nm、表面電阻<20 Ω)之玻璃基板(厚度1.1mm)。該第2電路構件的電路，係作成線寬幅25μm及節距50μm。然後，按與實施例1同樣方式，使用電路連接材料A以製作電路構件之連接構造。
(實施例3)
作為第1電路構件而準備與實施例1同樣的FPC。接著，作為第2電路構件而準備於表面上具備有ITO(最外層、 厚度50nm)/Cr(鉻)(厚度200nm)的2層構造的電路電極(表面電阻<20 Ω)之玻璃基板(厚度1.1mm)。該第2電路構件的電路，係作成線寬幅25μm及節距50μm。然後，按與實施例1同樣方式，使用電路連接材料A以製作電路構件之連接構造。
(實施例4)
作為第1電路構件而準備與實施例1同樣的FPC。接著，作為第2電路構件而準備於表面上具備有ITO(最外層、厚度50mm)/Ti(鈦)(厚度100nm)/Al(鋁)(厚度200nm)/Ti(厚度100nm)的4層構成的電路電極(表面電阻<20 Ω)之玻璃基板(厚度1.1mm)。該第2電路構件的電路，係作成線幅25μm及節距50μm。然後，按與實施例1同樣方式，使用電路連接材料A以製作電路構件之連接構造。
(實施例5)
作為第1電路構件而準備與實施例1同樣的FPC。接著，作為第2電路構件而準備於表面上具備Al電路電極(厚度200nm、表面電阻<5 Ω)之玻璃基板(厚度1.1mm)。該第2電路構件的電路，係作成線寬幅25μm及節距50μm。然後，按與實施例1同樣方式，使用電路連接材料A以製作電路構件之連接構造。
(實施例6)
除取代電路連接材料A，而採用電路連接材料B以外，其餘則按與實施例1同樣方式以製作電路構件之連接構造。
(實施例7)
除取代電路連接材料A，而採用電路連接材料B以外，其餘則按與實施例2同樣方式以製作電路構件之連接構造。
(實施例8)
除取代電路連接材料A，而採用電路連接材料B以外，其餘則按與實施例3同樣方式以製作電路構件之連接構造。
(實施例9)
除取代電路連接材料A，而採用電路連接材料B以外，其餘則按與實施例4同樣方式以製作電路構件之連接構造。
(實施例10)
除取代電路連接材料A，而採用電路連接材料B以外，其餘則按與實施例5同樣方式以製作電路構件之連接構造。
(實施例11)
除取代電路連接材料A，而採用電路連接材料C以外，其餘則按與實施例1同樣方式以製作電路構件之連接構造。
(實施例12)
除取代電路連接材料A，而採用電路連接材料C以外，其餘則按與實施例2同樣方式以製作電路構件之連接構造。
(實施例13)
除取代電路連接材料A，而採用電路連接材料C以外，其餘則按與實施例3同樣方式以製作電路構件之連接構造。
(實施例14)
除取代電路連接材料A，而採用電路連接材料C以外，其餘則按與實施例4同樣方式以製作電路構件之連接構造。
(實施例15)
除取代電路連接材料A，而採用電路連接材料C以外，其餘則按與實施例5同樣方式以製作電路構件之連接構 造。
(比較例1)
除取代電路連接材料A，而採用電路連接材料D以外，其餘則按與實施例1同樣方式以製作電路構件之連接構造。
(比較例2)
除取代電路連接材料A，而採用電路連接材料D以外，其餘則按與實施例2同樣方式以製作電路構件之連接構造。
(比較例3)
除取代電路連接材料A，而採用電路連接材料D以外，其餘則按與實施例3同樣方式以製作電路構件之連接構造。
(比較例4)
除取代電路連接材料A，而採用電路連接材料D以外，其餘則按與實施例4同樣方式以製作電路構件之連接構造。
(比較例5)
除取代電路連接材料A，而採用電路連接材料D以外 ，其餘則按與實施例5同樣方式以製作電路構件之連接構造。
(比較例6)
除取代電路連接材料A，而採用電路連接材料E以外，其餘則按與實施例1同樣方式以製作電路構件之連接構造。
(比較例7)
除取代電路連接材料A，而採用電路連接材料E以外，其餘則按與實施例2同樣方式以製作電路構件之連接構造。
(比較例8)
除取代電路連接材料A，而採用電路連接材料E以外，其餘則按與實施例3同樣方式以製作電路構件之連接構造。
(比較例9)
除取代電路連接材料A，而採用電路連接材料E以外，其餘則按與實施例4同樣方式以製作電路構件之連接構造。
(比較例10)
除取代電路連接材料A，而採用電路連接材料E以外，其餘則按與實施例5同樣方式以製作電路構件之連接構造。
(比較例11)
除取代電路連接材料A，而採用電路連接材料F以外，其餘則按與實施例1同樣方式以製作電路構件之連接構造。
(比較例12)
除取代電路連接材料A，而採用電路連接材料F以外，其餘則按與實施例2同樣方式以製作電路構件之連接構造。
(比較例13)
除取代電路連接材料A，而採用電路連接材料F以外，其餘則按與實施例3同樣方式以製作電路構件之連接構造。
(比較例14)
除取代電路連接材料A，而採用電路連接材料F以外，其餘則按與實施例4同樣方式以製作電路構件之連接構造。
(比較例15)
除取代電路連接材料A，而採用電路連接材料F以外，其餘則按與實施例5同樣方式以製作電路構件之連接構造。
(比較例16)
除取代電路連接材料A，而採用電路連接材料G以外，其餘則按與實施例1同樣方式以製作電路構件之連接構造。
(比較例17)
除取代電路連接材料A，而採用電路連接材料G以外，其餘則按與實施例2同樣方式以製作電路構件之連接構造。
(比較例18)
除取代電路連接材料A，而採用電路連接材料G以外，其餘則按與實施例3同樣方式以製作電路構件之連接構造。
(比較例19)
除取代電路連接材料A，而採用電路連接材料G以外，其餘則按與實施例4同樣方式以製作電路構件之連接構造。
(比較例20)
除取代電路連接材料A，而採用電路連接材料G以外，其餘則按與實施例5同樣方式以製作電路構件之連接構造。
(比較例21)
除取代電路連接材料A，而採用電路連接材料H以外，其餘則按與實施例1同樣方式以製作電路構件之連接構造。
(比較例22)
除取代電路連接材料A，而採用電路連接材料H以外，其餘則按與實施例2同樣方式以製作電路構件之連接構造。
(比較例23)
除取代電路連接材料A，而採用電路連接材料H以外，其餘則按與實施例3同樣方式以製作電路構件之連接構造。
(比較例24)
除取代電路連接材料A，而採用電路連接材料H以外，其餘則按與實施例4同樣方式以製作電路構件之連接構 造。
(比較例25)
除取代電路連接材料A，而採用電路連接材料H以外，其餘則按與實施例5同樣方式以製作電路構件之連接構造。
[於電路電極上所存在之導電粒子數]
使用微分干擾式顯微鏡(differential interference microscope)，以目視計數(n=38)於上述電路構件之連接構造中之各電路電極上所存在之導電粒子數。其結果，實施例1至15、比較例1至25的電路電極上平均導電粒子數係在32至45個的範圍內，而未能確認因電路連接材料或電路構件之不同所引起之導電粒子數的極端性增減。
[連接電阻之測定]
就上述電路構件之連接構造，使用萬用電表(multimeter)(ADC(股)公司製，商品名「數位萬用電表7461A」)，測定第1電路構件(FPC)的電路電極、及第2電路構件的電路電極之間的連接電阻值。連接電阻值，係在初期(剛連接後)，及於80℃、95%RH(相對濕度)的恆溫恆濕槽中保持500小時(高溫高濕處理)後所測定者。將其結果表示於表2中。
表2中，連接電阻值，係以相鄰接電路間的電阻37處 的平均值(x)與將標準偏差(σ)(standard deviation)乘3倍之值的和(x+3 σ)表示者。又，電阻增加率，係將從初期電阻值至高溫高濕處理後電阻值的增加量以百分比表示者，具體而言，係從下述式：電阻增加率(%)=[(處理後電阻值-初期電阻值)/初期電阻值]×100所算出者。作為連接可靠性的改善效率的判斷基準，將電阻增加率小於10%者訂為有改善效果，將10%以上且小於20%者訂為習知品水準，將20%以上者訂為無改善效果(NG)。
如表2中所示，如使用電路電極的全體或最外層係以ITO或IZO所構成之第2電路構件時，則在實施例1至4、6至9、11至14的電路構件之連接構造中，獲得電阻增加率小於10%之非常小的結果。相對於此，在比較例6至9、12至24的電路構件之連接構造中，則電阻增加率為約10至18%，而在比較例1至4、11至14、16至19的電路構件之連接構造中，電阻增加率為20%以上。
由此可知，對於電路電極全體或最外層係以ITO及IZO所構成之電路電極，藉由使用含有具有突起部、最外層係Ni且其厚度65至125nm之導電粒子之電路連接材料來連接，即可獲得連接可靠性的改善之事實。
又，如使用具備有Al電路電極之第2電路構件時，經以含有具有突起部、最外層為Ni且其厚度為65nm以上之導電粒子之電路連接材料來連接之實施例5、10、15、比較例10中，電阻增加率係小於10%之小的結果。此種結果，可推測係當連接時導電粒子表面的突起部突破Al電路電極表面的氧化膜後與電路電極相接觸之故。相對於此，經以含有無突起部之導電粒子之電路連接材料連接之比較例15、20中，電阻增加率係在約15至34%。又，經以含有具有突起部、最外層係Ni且其厚度為50nm之導電粒子之電路連接材料連接之比較例5中，電阻增加率則在約30%。
另外，從使用具有突起部而最外層係Ni之導電粒子之實施例5、10、15、比較例10、與使用具有突起部而最外層係Au之導電粒子之比較例25的電阻增加率在同樣程度 看來，對於電路電極係以Al所構成之電路構件，因導電粒子的最外層的金屬種類所致之對連接可靠性的改善效果似乎並不顯著。
由上述結果可確認，如採用本發明之電路連接材料，則可達成呈對向之電路電極彼此間之良好的電連接，且在高溫高濕環境下或熱衝擊試驗等中亦能充分提高穩定的連接可靠性。
[產業上之利用可能性]
如採用本發明之電路連接材料，則可達成呈對向之電路電極彼此間之良好的電連接，且可充分提高電路電極間的電特性的長期可靠性。又，如採用本發明，則可提供電路電極間的電特性的長期可靠性方面十分優異的電路構件之連接構造。
1‧‧‧電路構件之連接構造
10‧‧‧電路連接構件
11‧‧‧絕緣性物質
12‧‧‧導電粒子
14‧‧‧突起
21‧‧‧核體
21a‧‧‧中核部
21b‧‧‧突起部
22‧‧‧金屬層
30‧‧‧第1電路構件
31‧‧‧電路基板(第1電路基板)
31a‧‧‧主面
32‧‧‧電路電極(第1電路電極)
40‧‧‧第2電路構件
41‧‧‧電路基板(第2電路基板)
41a‧‧‧主面
42‧‧‧電路電極(第2電路電極)
43‧‧‧絕緣層(第2絕緣層)
第1圖：表示本發明之電路構件之連接構造之一實施形態之剖面圖。
第2圖：表示構成本發明之電路連接材料之導電粒子的各種形態之剖面圖。

Claims (6)

  1. 一種電路連接材料，其係將形成有電路電極之2個電路構件以使該電路電極呈對向的方式進行電連接用之電路連接材料，其特徵係該電路連接材料含有接著劑組成物與導電粒子，該導電粒子係由有機高分子化合物所構成之核體經以由鎳或鎳合金所構成之金屬層被覆而成、且表面具有複數之突起部，而該核體之平均粒徑係1~4μm，該金屬層之厚度為65~125nm，於該導電粒子中，該金屬層從該核體完全剝離之粒子的混入率，在粒子25萬個中小於5%。
  2. 如申請專利範圍第1項之電路連接材料，其中該突起部之高度為50~500nm。
  3. 如申請專利範圍第1或2項之電路連接材料，其中相鄰該突起部間之距離為1000nm以下。
  4. 一種電路構件之連接構造，其特徵係具備形成有電路電極且該電路電極呈對向配置之2個電路構件，與介於該電路構件間而使該電路電極進行電連接之電路連接構件，該電路連接構件係申請專利範圍第1或2項之電路連接材料或其硬化物。
  5. 如申請專利範圍第4項之電路構件之連接構造，其中前述2個電路構件之電路電極的至少一者具有由銦-錫氧化物所構成之最外層。
  6. 如申請專利範圍第4項之電路構件之連接構造，其中前述2個電路構件之電路電極的至少一者具有由銦-鋅氧化物所構成之最外層。
TW097117828A 2007-05-15 2008-05-15 Circuit connection material and circuit structure of the connection structure TWI402326B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007129221 2007-05-15

Publications (2)

Publication Number Publication Date
TW200916551A TW200916551A (en) 2009-04-16
TWI402326B true TWI402326B (zh) 2013-07-21

Family

ID=40002282

Family Applications (2)

Application Number Title Priority Date Filing Date
TW100104889A TWI431094B (zh) 2007-05-15 2008-05-15 Circuit connection material and circuit structure of the connection structure
TW097117828A TWI402326B (zh) 2007-05-15 2008-05-15 Circuit connection material and circuit structure of the connection structure

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW100104889A TWI431094B (zh) 2007-05-15 2008-05-15 Circuit connection material and circuit structure of the connection structure

Country Status (7)

Country Link
US (1) US20100139947A1 (zh)
EP (1) EP2148393A4 (zh)
JP (2) JP4743322B2 (zh)
KR (3) KR20100119830A (zh)
CN (2) CN102174299B (zh)
TW (2) TWI431094B (zh)
WO (1) WO2008140094A1 (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4737177B2 (ja) * 2006-10-31 2011-07-27 日立化成工業株式会社 回路接続構造体
JP5375374B2 (ja) * 2009-07-02 2013-12-25 日立化成株式会社 回路接続材料及び回路接続構造体
JP5435040B2 (ja) * 2010-04-01 2014-03-05 株式会社村田製作所 電子部品及びその製造方法
JP5476221B2 (ja) * 2010-06-18 2014-04-23 積水化学工業株式会社 導電性粒子、異方性導電材料及び接続構造体
JP5377767B2 (ja) * 2010-06-24 2013-12-25 株式会社フジクラ 自動車用電線
JP5854623B2 (ja) 2010-08-06 2016-02-09 キヤノン株式会社 撮像装置及びアクセサリ及び撮像装置システム
EP2528167B1 (en) 2011-05-25 2014-04-30 Tyco Electronics AMP GmbH Electrical contact element with a cover layer having a chemical reducing agent, electrical contact arrangement and methods for manufacturing an electrical contact element and for reducing oxidization of a contact section of an electrical contact element
JP5636118B2 (ja) * 2012-10-02 2014-12-03 積水化学工業株式会社 導電性粒子、導電材料及び接続構造体
FR2996348B1 (fr) 2012-10-03 2015-05-15 Amc Holding Poudre et pate pour ameliorer la conductance des connexions electriques
FR2997788B1 (fr) 2012-11-05 2016-01-22 Amc Etec Dispositif de sectionnement d'une ligne d'alimentation electrique a courant de haute intensite
JP6397316B2 (ja) * 2013-11-18 2018-09-26 積水化学工業株式会社 導電性粒子、導電材料及び接続構造体
CN107075258B (zh) * 2014-10-01 2020-03-06 纳美仕有限公司 树脂组合物
JP6945276B2 (ja) * 2016-03-31 2021-10-06 デクセリアルズ株式会社 異方性導電接続構造体
WO2018199329A1 (ja) * 2017-04-28 2018-11-01 日立化成株式会社 接着剤組成物、及び接続体の製造方法
WO2019142791A1 (ja) 2018-01-17 2019-07-25 日立化成株式会社 接着剤組成物、接続構造体及びその製造方法
JP7160302B2 (ja) * 2018-01-31 2022-10-25 三国電子有限会社 接続構造体および接続構造体の作製方法
JP7185252B2 (ja) 2018-01-31 2022-12-07 三国電子有限会社 接続構造体の作製方法
CN115349003B (zh) 2020-04-10 2024-02-06 株式会社力森诺科 黏合剂组合物、黏合剂膜、连接结构体及其制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000243132A (ja) * 1999-02-22 2000-09-08 Nippon Chem Ind Co Ltd 導電性無電解めっき粉体とその製造方法並びに該めっき粉体からなる導電性材料
JP2005166438A (ja) * 2003-12-02 2005-06-23 Hitachi Chem Co Ltd 回路接続材料、及びこれを用いた回路部材の接続構造

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59120436A (ja) 1982-12-27 1984-07-12 Seikosha Co Ltd 異方導電性ゴムシ−トの製造方法
JPS60191228A (ja) 1984-10-29 1985-09-28 Seiko Epson Corp 表示装置の接続構造
US4740657A (en) * 1986-02-14 1988-04-26 Hitachi, Chemical Company, Ltd Anisotropic-electroconductive adhesive composition, method for connecting circuits using the same, and connected circuit structure thus obtained
JPH01251787A (ja) 1988-03-31 1989-10-06 Toshiba Corp 電子部品の接続装置
US5716218A (en) * 1991-06-04 1998-02-10 Micron Technology, Inc. Process for manufacturing an interconnect for testing a semiconductor die
JP3907217B2 (ja) 1993-07-29 2007-04-18 日立化成工業株式会社 回路接続材料とその接続材料を用いた回路の接続方法
CA2154409C (en) * 1994-07-22 1999-12-14 Yuzo Shimada Connecting member and a connecting method using the same
US20020171789A1 (en) * 1995-12-04 2002-11-21 Minolta Co., Ltd. Layered type reflective full-color liquid crystal display element and display device having the element
US6034331A (en) * 1996-07-23 2000-03-07 Hitachi Chemical Company, Ltd. Connection sheet and electrode connection structure for electrically interconnecting electrodes facing each other, and method using the connection sheet
US5965064A (en) * 1997-10-28 1999-10-12 Sony Chemicals Corporation Anisotropically electroconductive adhesive and adhesive film
JP3379456B2 (ja) * 1998-12-25 2003-02-24 ソニーケミカル株式会社 異方導電性接着フィルム
JP3624818B2 (ja) 1999-10-12 2005-03-02 ソニーケミカル株式会社 異方性導電接続材料、接続体、およびその製造方法
KR100732017B1 (ko) * 2003-06-25 2007-06-25 히다치 가세고교 가부시끼가이샤 회로접속재료, 이것을 이용한 필름상 회로접속재료,회로부재의 접속구조 및 그 제조방법
JP4387175B2 (ja) * 2003-07-07 2009-12-16 積水化学工業株式会社 被覆導電性粒子、異方性導電材料及び導電接続構造体
JP4282417B2 (ja) * 2003-09-12 2009-06-24 ソニーケミカル＆インフォメーションデバイス株式会社 接続構造体
JP3856233B2 (ja) * 2003-10-15 2006-12-13 日立化成工業株式会社 電極の接続方法
KR101131229B1 (ko) * 2004-01-30 2012-03-28 세키스이가가쿠 고교가부시키가이샤 도전성 미립자 및 이방성 도전 재료
JP4674096B2 (ja) * 2005-02-15 2011-04-20 積水化学工業株式会社 導電性微粒子及び異方性導電材料
JP4737177B2 (ja) * 2006-10-31 2011-07-27 日立化成工業株式会社 回路接続構造体
CN101689410B (zh) * 2007-08-02 2013-10-16 日立化成株式会社 电路连接材料、使用它的电路构件的连接结构及电路构件的连接方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000243132A (ja) * 1999-02-22 2000-09-08 Nippon Chem Ind Co Ltd 導電性無電解めっき粉体とその製造方法並びに該めっき粉体からなる導電性材料
JP2005166438A (ja) * 2003-12-02 2005-06-23 Hitachi Chem Co Ltd 回路接続材料、及びこれを用いた回路部材の接続構造

Also Published As

Publication number Publication date
CN101632199B (zh) 2011-08-31
KR101410108B1 (ko) 2014-06-25
WO2008140094A1 (ja) 2008-11-20
CN101632199A (zh) 2010-01-20
TW200916551A (en) 2009-04-16
EP2148393A1 (en) 2010-01-27
CN102174299A (zh) 2011-09-07
JP4743322B2 (ja) 2011-08-10
TWI431094B (zh) 2014-03-21
EP2148393A4 (en) 2012-03-28
JPWO2008140094A1 (ja) 2010-08-05
JP2011091044A (ja) 2011-05-06
KR20100009540A (ko) 2010-01-27
CN102174299B (zh) 2014-01-29
KR20100119830A (ko) 2010-11-10
US20100139947A1 (en) 2010-06-10
TW201122078A (en) 2011-07-01
KR20120043044A (ko) 2012-05-03

Similar Documents

Publication Publication Date Title
TWI402326B (zh) Circuit connection material and circuit structure of the connection structure
JP5247968B2 (ja) 回路接続材料、及びこれを用いた回路部材の接続構造
TWI396487B (zh) 電路連接材料、使用其之薄膜狀電路連接材料、電路構件之連接構造及其製造方法
TWI373993B (zh)
JP5051221B2 (ja) 回路部材の接続構造及び回路部材の接続方法
TWI395801B (zh) Circuit connection material and circuit structure of the connection structure
TWI398880B (zh) Circuit connection material and circuit connection structure
TW200924569A (en) Circuit member connecting structure
JP2011100605A (ja) 回路接続材料及び、これを用いた回路部材の接続構造
JP2003323813A (ja) 回路接続材料及びそれを用いた回路端子の接続構造
JP2011054988A (ja) 回路接続材料
JP5387592B2 (ja) 回路接続材料、及び回路部材の接続構造の製造方法