TWI400349B - 磁控管濺鍍用磁回路裝置及其製造方法 - Google Patents

磁控管濺鍍用磁回路裝置及其製造方法 Download PDF

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Publication number
TWI400349B
TWI400349B TW095103754A TW95103754A TWI400349B TW I400349 B TWI400349 B TW I400349B TW 095103754 A TW095103754 A TW 095103754A TW 95103754 A TW95103754 A TW 95103754A TW I400349 B TWI400349 B TW I400349B
Authority
TW
Taiwan
Prior art keywords
permanent magnet
side plate
plate portion
protective cover
cover member
Prior art date
Application number
TW095103754A
Other languages
English (en)
Chinese (zh)
Other versions
TW200641173A (en
Inventor
Hiroaki Yuasa
Yoshihiko Kuriyama
Original Assignee
Hitachi Metals Ltd
Neomax Kiko Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd, Neomax Kiko Co Ltd filed Critical Hitachi Metals Ltd
Publication of TW200641173A publication Critical patent/TW200641173A/zh
Application granted granted Critical
Publication of TWI400349B publication Critical patent/TWI400349B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW095103754A 2005-02-02 2006-02-03 磁控管濺鍍用磁回路裝置及其製造方法 TWI400349B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005026389 2005-02-02

Publications (2)

Publication Number Publication Date
TW200641173A TW200641173A (en) 2006-12-01
TWI400349B true TWI400349B (zh) 2013-07-01

Family

ID=36777247

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095103754A TWI400349B (zh) 2005-02-02 2006-02-03 磁控管濺鍍用磁回路裝置及其製造方法

Country Status (5)

Country Link
JP (1) JP4924835B2 (ja)
KR (1) KR101243068B1 (ja)
CN (1) CN101107381A (ja)
TW (1) TWI400349B (ja)
WO (1) WO2006082863A1 (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5012571B2 (ja) * 2008-02-29 2012-08-29 富士通株式会社 マグネトロンスパッタ装置用磁石ユニット
JP2009235497A (ja) * 2008-03-27 2009-10-15 Shinmaywa Industries Ltd スパッタリング装置
JP5461264B2 (ja) * 2010-03-25 2014-04-02 キヤノンアネルバ株式会社 マグネトロンスパッタリング装置、及び、スパッタリング方法
US20160133445A9 (en) * 2011-11-04 2016-05-12 Intevac, Inc. Sputtering system and method for highly magnetic materials
US9347129B2 (en) 2011-12-09 2016-05-24 Seagate Technology Llc Interchangeable magnet pack
US10573500B2 (en) 2011-12-09 2020-02-25 Seagate Technology Llc Interchangeable magnet pack
CN102978725A (zh) * 2012-12-03 2013-03-20 吴江市东飞化纤有限公司 化纤干燥装置
CN105632855B (zh) * 2014-10-28 2018-05-25 北京北方华创微电子装备有限公司 一种磁控管及半导体加工设备
KR101694197B1 (ko) * 2015-03-25 2017-01-09 주식회사 에스에프에이 스퍼터 장치
JP2019030063A (ja) * 2017-07-26 2019-02-21 Tdk株式会社 磁石構造体及びモータ
CN111996505B (zh) * 2020-07-10 2023-07-14 包头稀土研究院 磁控溅射铁磁性靶材的装置
KR102412882B1 (ko) * 2020-10-30 2022-06-27 (주)울텍 스퍼터 건용 마그넷 모듈
KR102340351B1 (ko) * 2021-05-26 2021-12-16 고영효 마그네트론 스퍼터링 장치의 자기회로 및 그 제조 방법

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62142765A (ja) * 1985-12-17 1987-06-26 Rohm Co Ltd マグネトロンスパツタにおける膜厚調整方法
JPH05239640A (ja) * 1991-08-02 1993-09-17 Anelva Corp スパッタリング装置
TW272237B (ja) * 1993-12-30 1996-03-11 Nidden Aneruba Kk
JPH0925573A (ja) * 1995-06-28 1997-01-28 Daewoo Electron Co Ltd スパッタリング装置
JPH10317137A (ja) * 1997-05-13 1998-12-02 Fuji Elelctrochem Co Ltd マグネット取付装置
JPH1136068A (ja) * 1997-07-17 1999-02-09 Sony Corp スパッタリング用カソードマグネット取付け構造
TW417143B (en) * 1998-05-20 2001-01-01 Applied Materials Inc Sputtering device and magnetron unit
TW480553B (en) * 1999-07-02 2002-03-21 Applied Materials Inc Magnetron unit and sputtering device
TW200504238A (en) * 2003-07-28 2005-02-01 Fts Corp Box-shaped facing-targets sputtering apparatus and method for producing compound thin film

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0719982B2 (ja) * 1986-07-02 1995-03-06 松下電器産業株式会社 筐体取付装置
JP2571817Y2 (ja) * 1992-02-27 1998-05-20 株式会社トーキン スパッタリング装置用磁気回路
JPH08325726A (ja) * 1995-05-29 1996-12-10 Hitachi Ltd カソード電極
JPH1021978A (ja) * 1996-06-28 1998-01-23 Nippon Antenna Co Ltd 同軸ケーブル固着部品
JP2001299604A (ja) * 2000-04-20 2001-10-30 Toto Ltd 洗面化粧台

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62142765A (ja) * 1985-12-17 1987-06-26 Rohm Co Ltd マグネトロンスパツタにおける膜厚調整方法
JPH05239640A (ja) * 1991-08-02 1993-09-17 Anelva Corp スパッタリング装置
TW272237B (ja) * 1993-12-30 1996-03-11 Nidden Aneruba Kk
JPH0925573A (ja) * 1995-06-28 1997-01-28 Daewoo Electron Co Ltd スパッタリング装置
JPH10317137A (ja) * 1997-05-13 1998-12-02 Fuji Elelctrochem Co Ltd マグネット取付装置
JPH1136068A (ja) * 1997-07-17 1999-02-09 Sony Corp スパッタリング用カソードマグネット取付け構造
TW417143B (en) * 1998-05-20 2001-01-01 Applied Materials Inc Sputtering device and magnetron unit
TW480553B (en) * 1999-07-02 2002-03-21 Applied Materials Inc Magnetron unit and sputtering device
TW200504238A (en) * 2003-07-28 2005-02-01 Fts Corp Box-shaped facing-targets sputtering apparatus and method for producing compound thin film

Also Published As

Publication number Publication date
TW200641173A (en) 2006-12-01
CN101107381A (zh) 2008-01-16
JPWO2006082863A1 (ja) 2008-06-26
JP4924835B2 (ja) 2012-04-25
KR101243068B1 (ko) 2013-03-13
KR20070102497A (ko) 2007-10-18
WO2006082863A1 (ja) 2006-08-10

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