TWI397916B - 半導體儲存裝置 - Google Patents

半導體儲存裝置 Download PDF

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Publication number
TWI397916B
TWI397916B TW097144965A TW97144965A TWI397916B TW I397916 B TWI397916 B TW I397916B TW 097144965 A TW097144965 A TW 097144965A TW 97144965 A TW97144965 A TW 97144965A TW I397916 B TWI397916 B TW I397916B
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TW
Taiwan
Prior art keywords
block
management table
monitored
data
error count
Prior art date
Application number
TW097144965A
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English (en)
Chinese (zh)
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TW200941488A (en
Inventor
Toshikatsu Hida
Shinichi Kanno
Hirokuni Yano
Kazuya Kitsunai
Shigehiro Asano
Junji Yano
Original Assignee
Toshiba Kk
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Publication of TW200941488A publication Critical patent/TW200941488A/zh
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Publication of TWI397916B publication Critical patent/TWI397916B/zh

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Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/14—Error detection or correction of the data by redundancy in operation
    • G06F11/1402—Saving, restoring, recovering or retrying
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/16—Protection against loss of memory contents
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
  • Debugging And Monitoring (AREA)
TW097144965A 2008-02-29 2008-11-20 半導體儲存裝置 TWI397916B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008049193A JP4489127B2 (ja) 2008-02-29 2008-02-29 半導体記憶装置

Publications (2)

Publication Number Publication Date
TW200941488A TW200941488A (en) 2009-10-01
TWI397916B true TWI397916B (zh) 2013-06-01

Family

ID=41015678

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097144965A TWI397916B (zh) 2008-02-29 2008-11-20 半導體儲存裝置

Country Status (7)

Country Link
US (5) US8060797B2 (enExample)
EP (1) EP2245542B1 (enExample)
JP (1) JP4489127B2 (enExample)
KR (1) KR101012445B1 (enExample)
CN (1) CN101622607B (enExample)
TW (1) TWI397916B (enExample)
WO (1) WO2009107268A1 (enExample)

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* Cited by examiner, † Cited by third party
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