TWI394287B - 波長可變換之半導體發光元件 - Google Patents
波長可變換之半導體發光元件 Download PDFInfo
- Publication number
- TWI394287B TWI394287B TW094104926A TW94104926A TWI394287B TW I394287 B TWI394287 B TW I394287B TW 094104926 A TW094104926 A TW 094104926A TW 94104926 A TW94104926 A TW 94104926A TW I394287 B TWI394287 B TW I394287B
- Authority
- TW
- Taiwan
- Prior art keywords
- wavelength
- light
- phosphor
- converting material
- wavelength converting
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 88
- 238000009877 rendering Methods 0.000 claims abstract description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 157
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 239000005132 Calcium sulfide based phosphorescent agent Substances 0.000 claims description 12
- 238000005286 illumination Methods 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 5
- 229910004122 SrSi Inorganic materials 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims description 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims 1
- 229920002098 polyfluorene Polymers 0.000 claims 1
- 230000003993 interaction Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 50
- 238000000295 emission spectrum Methods 0.000 description 19
- 238000001228 spectrum Methods 0.000 description 19
- 239000010408 film Substances 0.000 description 14
- 238000000695 excitation spectrum Methods 0.000 description 11
- 239000000203 mixture Substances 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 239000012780 transparent material Substances 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 230000005284 excitation Effects 0.000 description 6
- 238000004020 luminiscence type Methods 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 238000001652 electrophoretic deposition Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000001429 visible spectrum Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000003877 atomic layer epitaxy Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- -1 polyoxymethylene Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7729—Chalcogenides
- C09K11/7731—Chalcogenides with alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77342—Silicates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77347—Silicon Nitrides or Silicon Oxynitrides
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Luminescent Compositions (AREA)
Description
本發明有關波長可變換之半導體發光元件。
包括發光二極體(LED)的半導體發光元件是目前所能使用之最有效的光源之一。目前,在製造高亮度發光元件中,能夠橫跨可見光譜操作的重要材料系統包括,III-V族(Group III-V)半導體,尤其是鎵、鋁、銦、及氮的二元、三元、及四元合金,亦稱之為III族氮化物(III-nitride)材料。通常,III族氮化物發光元件係藉由金屬有機化學汽相沉積(metal-organic chemical vapor deposition;MOCVD)、分子束磊晶(molecular beam epitaxy;MBE)、或其他磊晶技術在藍寶石、碳化矽、III族氮化物、或其他適當的基板上,磊晶生長具有不同成分與摻雜濃度之半導體層堆疊來製造。通常使用藍寶石作為生長基板,因其廣泛的商業可用性且使用相對較容易。在生長基板上生長的堆疊通常包括:在基板上形成的摻雜如矽(Si)的一或多個n型層,在各n型層上形成的發光或作用區域,以及在作用區域上形成的摻雜如鎂(Mg)的一或多個p型層。III族氮化物發光元件可有效發射UV通過綠光。
已提出藉由如磷光體之螢光材料來變換由發光二極體所發射之光線色彩的照明系統。
混合藍色LED主要發射與黃色磷光體所發射之光線的兩色照明系統在美國專利5,998,925中有所描述。Y3
Al5
O12
:Cc3+
磷光體經塗布在III族氮化物LED上,而一部分自LED發射的藍色光線由磷光體變換為黃色光線。另一部分自LED的藍色光線透過磷光體發射。因此,此系統自LED發射藍色光線以及自磷光體發射黃色光線這兩種光線。觀看者所看到的藍色和黃色發射帶的混合光線是白色光線,CRI大約在75和80之間,色溫Tc
大約從6000 K到8000 K之間。
然而,基於兩色方法的白色光線LED只能在有限範圍內用在一般用途的照明上,故因無紅色成分而色彩展現為差。
圖1顯示缺紅弱點補償照明系統,另在美國專利6,351,069中有更詳盡的描述。圖1的LED 34設計可產生色彩平衡的白色輸出光線,以提供色彩校正良好的照明。此外,「LED 34包括位置在反射罩引線架14上並電耦合至引線架16和18的氮化鎵(GaN)晶粒12。引線架16和18提供激發功率至GaN晶粒12。GaN晶粒12一般可為方形。在較佳具體實施例中,GaN晶粒12經設定以發射具有峰值波長470 nm的主要光線,其位於光譜的藍色區域內,即藍色光線。GaN晶粒12為透明材料製造的間隔層36所覆蓋。透明材料可為透明的環氧或玻璃。鄰接間隔層36的是螢光層38。螢光層38包括螢光材料22和第二螢光材料40。螢光材料22具有吸收主要光線和發射具有第一峰值波長之次要光線的性質,而螢光材料40具有吸收主要光線和發射具有第二峰值波長之次要光線的性質。較佳,由螢光材料22所發射的次要光線具有集中在可見頻譜之黃色區域內的寬頻光譜分布。然而,由螢光材料40所發射的次要光線具有在可見光譜之紅色區域
內的寬頻光譜分布。因此,當主要光線和由螢光材料22及40發射的次要光線組合時,會造成除其他色彩外還富有紅色的白色光線。次要光線的峰值波長,除主要光線的峰值波長外,還根據螢光材料22和40的組成物而定(參照美國專利6,351,069第4欄第61行至第5欄第23行)」。
包括兩個螢光材料的螢光層38是磷光體與樹脂混合物,其「包括兩個與樹脂糊膠組合的螢光材料。」磷光體與樹脂混合物「係沉積在封裝層上以形成均勻覆蓋封裝層的螢光層。然後,沉積的磷光體與樹脂混合物可予以凝膠化,即部分固化。」因此,在美國專利6,351,069的缺紅弱點補償系統中,將兩個螢光材料混合在一起,然後懸浮在樹脂層中。
根據本發明具體實施例,波長可變換之半導體發光元件包括第一波長變換材料和第二波長變換材料。第一波長變換材料發射的光線具有短於由第二波長變換材料所發射光線之波長。在部分具體實施例中,第一和第二波長變換材料經配置可極大化以下一或多個項目:元件所發射之組合可見光的發光當量、演色性指數、及色域。在部分具體實施例中,第一和第二波長變換材料經沉積在相鄰的發光元件上。在部分具體實施例中,第一和第二波長變換材料經沉積為離散層。
根據本發明具體實施例,揭露包括多個波長變換材料(如
磷光體)與半導體發光元件組合的系統。在以下說明中,「混合的」或「合成的」光線係指由半導體發光元件發射之光線和由在系統中所有磷光體發射之光線的組合。
在部分具體實施例中,有藍色發光二極體與發射黃色或綠色的磷光體及發射紅色的磷光體組合在一起。合適的發射黃色或綠色的磷光體之範例包括:(Lu1-x-y-a-b
Yx
Gdy
)3
(Al1-z
Gaz
)5
O12
:Cea 3+
Prb 3+
,其中0<x<1、0<y<1、0<z<0.1、0<a<0.2又0<b<0.1;包括如:Lu3
Al5
O12
:Ce3+
及Y3
Al5
O12
:Ce3+
、(Sr1-a-b
Cab
Bac
)Six
Ny
Oz
:Eua2+
(a=0.002-0.2、b=0.0-0.25、c=0.0-0.25、x=1.5-2.5、y=1.5-2.5、z=1.5-2.5);包括如:SrSi2
N2
O2
:Eu2+
、(Sr1-u-v-x
Mgu
Cav
Bax
)(Ga2-y-z
Aly
Inz
S4
):Eu2+
,包括如:SrGa2
S4
:Eu2+
及Sr1-x
Bax
SiO4
:Eu2+
。合適的發射紅色的磷光體之範例,包括(Ca1-x
Srx
)S:Eu2+
,其中0<x<1;包括如:CaS:Eu2+
及SrS:Eu2+
、及(Sr1-x-y
Bax
Cay
)2-z
Si5-a
Ala
N8-a
Oa
:Euz 2+
,其中0<a<5、0<x<1、0<y<1又0<z<1;包括如Sr2
Si5
N8
:Eu2+
。
在部分具體實施例中,有UV發光二極體與發射藍色的磷光體、發射黃色或綠色的磷光體及發射紅色的磷光體組合在一起。合適的發射黃色或綠色的磷光體以及合適的發射紅色的磷光體之範例列於以上。合適的發射藍色的磷光體,包括如MgSrSiO4
。
雖然以下描述的具體實施例係指與兩個磷光體組合在一起的藍色LED以及與三個磷光體組合在一起的一紫外線(UV)LED,但應明白,可採用更多或更少磷光體及發射其他色彩的LED。
以上列出的某些磷光體的激發和發射光譜顯示於圖2中。在圖2中,光譜a為Sr2
Si5
N8
:Eu2 +
之激發光譜,光譜b為Sr2
Si5
N8
:Eu2 +
之發射光譜,光譜c為MgSrSiO4
之發射光譜,光譜d為Sr1 - x
Bax
SiO4
:Eu2 +
之發射光譜,光譜e
為SrGa2
S4
:Eu2 +
之發射光譜,光譜f為SrSi2
N2
O2
:Eu2 +
之發射光譜。
本發明人觀察到,當有些磷光體混合在一起時,混合的磷光體之間的交互作用可能對元件的效率和光譜有不利影響。因此,端視在組合中的磷光體,如以下圖3-6所描述,將磷光體沉積為分開的、離散的層,可改善元件的效能。較佳的磷光體配置是否為如圖1中之磷光體混合或如圖3-6中之離散的層,可根據磷光體的激發和發射光譜及應用而定。以下描述三種應用:具有直接沉積在LED上的磷光體之照明元件、具有和LED隔開的磷光體之顯示器、以及具有和LED隔開的磷光體之照明元件。對照明元件而言,可選擇磷光體配置以極大化表示為CRI或Ra的演色性指數。對顯示器而言,可選擇磷光體配置以極大化使用在元件中的濾色片之色域。若非照明元件則在顯示器,最好能極大化發光當量。對某光譜而言,發光當量是最高可能的效率,並表示為lumens/W。
圖1和3-6顯示第一應用,具有直接沉積在LED上的磷光體之照明元件,若非如圖1中之混合則為如圖3-6中之離散的層。在照明元件中,選擇磷光體配置以極大化發光當量和演色性指數。為特定的磷光體組合決定圖1和3-6的磷光體配置何者為宜,係以下述兩個範例描述之:含有Y3
Al5
O12
:Ce3+
和Sr2
Si5
N8
:Eu2+
磷光體之元件以及含有Y3
Al5
O12
:Ce3+
及CaS:Eu2+
磷光體之元件。
在第一範例中,藍色發光二極體與Y3
Al5
O12
:Ce3+
及Sr2
Si5
N8
:Eu2+
磷光體組合在一起。圖14顯示Y3
Al5
O12
:Ce3+
及Sr2
Si5
N8
:Eu2+
之激發和發射光譜。在由系統發射的組合光線之第一近似中,加入藍色發光二極體的頻譜和兩個磷光體。Y3
Al5
O12
:Ce3+
和Sr2
Si5
N8
:Eu2+
之發射光譜顯示,兩個磷光體都在橘色波長具有強烈的發射,例如大約為600 nm在橘色波長的發射光譜之重疊使得混合光線之顯現從紅色朝向較短的波長移位。此移位對混合光線之演色可能造成負面影響。
此外,圖14顯示,Y3
Al5
O12
:Ce3+
之發射光譜與Sr2
Si5
N8
:Eu2+
之激發光譜重疊。結果,從Y3
Al5
O12
:Ce3+
磷光體的一部分發射可能為Sr2
Si5
N8
:Eu2+
磷光體所消耗,降低了在混合光線中的綠色/黃色光線量。此外,由Y3
Al5
O12
:Ce3+
所發射的光線為Sr2
Si5
N8
:Eu2+
所吸收,惡化了混合光線朝向較短的橘色波長移位。兩種效應對混合光線之演色可能造成負面影響。
由發射綠色/黃色的磷光體所發射的光線為發射紅色的磷光體所吸收,可能因分開綠色/黃色和紅色磷光體為離散區域而降低。圖3-6顯示該元件之具體實施例,其中發射紅色的磷光體和發射綠色/黃色的磷光體沉積的情況,使得由發射綠色/黃色的磷光體所發射的光線為發射紅色的磷光體所吸收而降低。
圖3說明的元件中,一半導體發光元件1係置放於一反射罩2中。發射綠色/黃色之磷光體5係與樹脂、聚矽氧或其他透明材料混合在一起,並置放於反射罩2之一面上,任何其他磷光體4,包括發射紅色的磷光體,則分開地與樹脂、聚矽氧或其他透明材料混合在一起,並置放於反射罩2之另一面上,使得研磨液5不明顯與研磨液4混合在一起。在部分具體實施例中,要選擇形成研磨液的透明材料之黏性,以免磷光體4與磷光體5混合在一起。由於發射綠色/黃色的磷光體5和任何其他磷光體4互相鄰近,而非混合在相同的研磨液之內,由綠色/黃色磷光體5所發射的光線比較不會被研磨液4中任何發射紅色的磷光體所吸收。
在顯示於圖4中的元件裡,發射綠色/黃色的磷光體5和其他磷光體4經沉積在LED 1之上為離散的層。磷光體層4,包括任何發射紅色的磷光體,經沉積最接近LED 1。發射綠色/黃色的磷光體5則經沉積在磷光體層4之上。磷光體層4和5可為一選擇性的透明層6所分開。磷光體層4和5可在樹脂或其他透明材料中沉積為研磨液;由例如電子束蒸發、熱力蒸發、射頻濺鍍、化學汽相沉積或原子層磊晶等方法沉積為薄膜;或由例如網版印刷、美國專利6,650,044所述之模板或由美國專利6,576,488所述之電泳沉積等方法在LED 1之上沉積為等形層。薄膜在美國專利6,696,703中有更詳盡的描述。美國專利6,696,703、美國專利6,650,044及美國專利6,576,488皆以提及方式併入本文。對照於通常表現儼然為單一大磷光體粒子的薄膜,在等形層裡的磷光體一般表現猶如多個磷光體粒子。此外,薄膜通常除磷光體外,不含其他材料。等形層通常包括磷光體之外的材料,如氧化矽。
在部分具體實施例中,元件中有一或多個雙向濾色片。設計來傳輸由LED 1所發射之光線但會反射由磷光體4和5所發射之光線的雙向濾色片包含在LED 1和磷光體層4之間。發射綠色/黃色的磷光體5和發射紅色的磷光體4之間的層6,可為設計來傳輸由發射紅色的磷光體4和LED 1所發射之光線並反射由發射綠色/黃色的磷光體5所發射之光線的雙向濾色片。雙向濾色片可藉由磷光體層4和5降低反散射入LED 1的輻射量,其可在LED 1被吸收。在顯示於圖5中的元件裡,發射綠色/黃色的磷光體5和其他磷光體4按複數個小區域經沉積於LED 1上。不同的區域可形成圖案,如棋盤式的圖案。如果未變換光線從LED 1逸出,如同在由LED所發射的藍色光線與由磷光體所發射的綠色和紅色光線混合而造成白色光線之案例中一般,可藉由控制磷光體區域4和5之厚度,或讓LED 1區域不受覆蓋,或覆蓋以不變換LED 1所發射光線之選擇性透明材料7,以控制未變換光線的量。如顯示於圖5之不同磷光體層的圖案可藉由電泳沉積方法沉積形成磷光體的第一層,利用習用的微影蝕刻及蝕刻技術圖案化該層,然後藉由電泳沉積方法沉積第二磷光體層。或可藉由網版印刷或噴墨印刷沉積磷光體層的圖案。在部分具體實施例中,可藉由將個別磷光體混合體4和5分注入微生物學所用的透明塑膠微板裡的井中,以形成磷光體層的圖案。然後把填充磷光體的微板放到LED 1上。填充磷光體的微板可分開地從LED 1形成。
在顯示於圖6的元件中,磷光體4的複數個小區域,包括任何發射紅色的磷光體,係形成於LED 1的表面上。發射綠色/黃色的磷光體5之層經沉積在磷光體4的複數個區域之上顯示於圖3-6的每個具體實施例可降低上述的吸收之問題。在各情況中,由LED 1所發射的光線先是紅色發射磷光體為入射,或發射紅色的磷光體以及在分開之區域裡的發射綠色/黃色的磷光體為入射。因此,顯示於圖3-6中的配置降低了從綠色/黃色磷光體發射的光線會被發射紅色的磷光體吸收的可能性。
如顯示於圖3-6一般分開磷光體,顯著地改善了含有藍色LED(Y3
Al5
O1 2
:Ce3 +
及Sr2
Si5
N8
:Eu2 +
)磷光體之照明系統的演色。圖15顯示發自如顯示於圖1(曲線a)的混合磷光體配置裡以及如顯示於圖4(曲線b)的分層磷光體配置裡之藍色LED、Y3
Al5
O1 2
:Ce3 +
及Sr2
Si5
N8
:Eu2 +
磷光體的混合光線之光譜。兩個磷光體配置具有高發光當量(分層配置為296,混合配置為343),但是分層配置明顯顯示較高的演色性指數:相較於混合配置的75為87。
在部分具體實施例中,分開發射綠色/黃色和紅色的磷光體,無法改善元件的效能,如顯示於照明系統的第二範例中,此處藍色LED與Y3
Al5
O1 2
:Ce3 +
及CaS:Eu2 +
磷光體組合在一起。圖14顯示Y3
Al5
O1 2
:Ce3 +
及CaS:Eu2 +
磷光體之激發和發射光譜。最左的實線曲線為Y3
Al5
O1 2
:Ce3 +
之激發光譜。中央的實線曲線為Y3
Al5
O1 2
:Ce3 +
之發射光譜。虛線曲線為CaS:Eu2 +
之激發光譜。最右的實線曲線為CaS:Eu2 +
之發射光譜。圖7顯示發自含有藍色LED和Y3
Al5
O1 2
:Ce3 +
及CaS:Eu2 +
磷光體之系統的合成光線之三個光譜。曲線a係模擬計算發自發光二極體和兩個磷光體之發射光譜的重疊所得之光譜。曲線b係觀察發自如顯示於圖1中的兩個磷光體在單一層裡混合形成的元件所得之光譜。曲線c係觀察發自如顯示於圖4中含有兩個離散的磷光體層的元件所得之光譜。磷光體分層會降低元件的發光當量。分層的元件,其演色性指數為96,發光當量為265。混合的元件,其演色性指數為91,發光當量為300。因此,磷光體分層會降低元件的發光當量,並無顯著改善演色。因此,混合磷光體為較佳。
多個磷光體最好混合或形成為離散的層,有許多因素可能影響。兩個磷光體的折射率及其粒子大小之間的差異會影響發自綠色/黃色磷光體的發射受到紅色磷光體吸收的可能性。兩個材料間的折射率差距增大,則也增加了入射兩個材料間之介面的光線較可能被反射而不受到吸收的可能性。因此,如果兩個磷光體的折射率非常不同,則在紅色磷光體入射時,由綠色/黃色磷光體所發射的光線很可能被散射而非吸收。此外,發射紅色的磷光體之發射光譜的位置,可能影響到兩個磷光體是否應為混合。如上述,發射綠色/黃色的磷光體和發射紅色的磷光體之間的交互作用可能使得發自系統之合成光線的紅色成分朝向較短、較為橘色波長移位,因而降低演色。發射紅色的磷光體之峰值波長越長,則系統越能容忍紅色朝向較短波長移位而不影響演色。再者,發射綠色/黃色的磷光體之發射光譜與發射紅色的磷光體之激發光譜之間的重疊,可能影響到兩個磷光體是否應為混合。重疊越明顯,則發射綠色/黃色的磷光體越可能會有明顯的發射量被發射紅色的磷光體吸收。因此,重疊越明顯,則系統的效能越可能會因分開磷光體而改變。
在部分具體實施例中,雖然磷光體分開在離散層裡,但是可能有例如小量之發射紅色的磷光體會包含在發射綠色/黃色的磷光體層裡。在發射綠色/黃色的磷光體層裡之小量發射紅色的磷光體可能改善合成光線的演色。
圖8顯示第二應用,即磷光體與一或多個LED隔開的顯示器。顯示於圖8中元件的更詳盡解說,請參閱2003年10月3日提出之標題為「LCD Backlight Using Two-Dimensional Array LEDs使(用二維陣列LED之背光液晶顯示器)」的專利申請案第10/678,541號,其內容在此以引用方式併入本文中。
圖8為LCD顯示器之側視圖。LED陣列24係放置於背光26的背面面板上。背光26係覆蓋以漫射蓋板40。漫射體40係以例如丙烯酸或玻璃所造,具有粗糙表面以漫射光線。或者,漫射體40之丙烯酸或玻璃板上可具有光散射粒子。已知有許多漫射體類型,可與背光26合用。如果背光26輸出的光線無需漫射體即充足漫射,則可用透明板代替漫射體40。漫射體之頂部上、液晶顯示器正前方可使用額外膜(圖中未顯示)以提高亮度或效率,例如3M公司所生產的亮度增強膜及雙層亮度增強膜。
背光26之背平面及側壁係以高反射材料覆蓋。背面上採用白色漫射反射膜(如日本Toray生產的E60L)且側壁上採用鏡面反射材料(如德國Alanod生產的Miro材料),已獲得良好結果,但其他組態亦具有同樣效果。所使用之材料應具有高反射係數,較佳大於90。使用該等高反射材料,可達成高回收效率。這在使用上述亮度增強膜時特別重要,因為該等膜所反射之光無法在第一次傳遞中使用,需要將其回收,以在第二次或第三次傳遞中有助於液晶顯示器之輸出。
LCD面板14係放置於背光26的前面。LCD面板14可為習用的液晶顯示器,具有第一偏振濾光器、在整個液晶層之選擇區域土產生電場的薄膜電晶體陣列、液晶層、RGB濾色片陣列、以及第二偏振濾光器。濾色片陣列具有紅色、綠色及藍色子像素。於LCD面板14與背光26之間可使用額外膜,例如亮度增強膜(BEF)或極化回復膜(DBEF)。LED 26一般為藍色或為發射UV的LED。如圖1中可包含多個混合磷光體或如圖3-6中分層磷光體的磷光體層39,係在蓋板40上形成而非直接在LED 26上形成。在部分具體實施例中,不同的磷光體層係在蓋板40的不同表面上形成。蓋板40可以是或可以不是漫射體,端視由磷光體所執行之漫射量而定。將磷光體層39從LED 26隔開的做法受到歡迎,是因為從磷光體發射到背光26背面的光線,由於在背光26裡使用之薄膜的高反射性,有較之於射入LED晶片者更大的回收效率。除回收效率外,磷光體無需耐受接近LED的高溫,且在化學上無需與LED相容,因而增加了合適的磷光體的數量,並潛在地改善了元件的效率和壽命。從物資觀點來看,此解決方案亦具有吸引力,因為採用不同類型的濾色片,藍色背光可用於大範圍之不同顯示器,且為適應一特定液晶顯示器,僅須最佳化磷光體層之厚度及磷光體濃度。
在顯示於圖8中的顯示器裡,可選擇磷光體配置以極大化發光當量及色域。
圖9、10、11、12及13顯示數個磷光體組合物與藍色發光二極體組合的效能。在圖9-13的各圖中,曲線a代表被視為真正白色光線的普朗克軌跡(Planckian locus),曲線b則代表CIE圖。曲線c顯示用在圖8之元件的RGB像素濾色片裡的濾色片可濾出之色彩色域。點d代表由LED和磷光體所發射的混合光線之色彩。曲線e代表NTSC標準所要求之色彩色域。點f代表由每個紅色、藍色及綠色濾色片濾出後的光線色彩。點g顯示濾出前的合成光線之光譜。曲線h、i和j顯示圖8的RGB像素濾色片之藍色、綠色及紅色濾色片的效能。曲線k顯示由LED及磷光體組合所發射的合成光線。曲線1顯示穿過曲線h所代表之藍色濾色片後的合成光線。曲線m顯示穿過曲線i所代表之綠色濾色片後的合成光線。曲線n顯示穿過曲線j所代表之紅色濾色片後的合成光線。
在顯示於圖9中之元件裡,藍色LED係以例如455 nn發射的光線與單一磷光體(Y3
Al5
O1 2
:Ce3 +
)相結合。顯示於圖9中的元件以發光當量299操作,並具有NTSC標準色域範圍的62%之色域。
在顯示於圖10中之元件裡,將發射紅色的磷光體(SrS:Eu2 +
)加入圖9之元件。加入SrS:Eu2 +
並無法顯著影響元件的效能。顯示於圖10中的元件以發光當量291操作,並具有NTSC標準色域範圍的62%之色域。
顯示於圖11的元件將藍色發光二極體與SrGa2
S4
:Eu2 +
及CaS:Eu2 +
相結合。該元件證明具有優異的色域(NTSC的86%)但很差的發光當量200。在此情況中,如顯示於圖3-6中,形成離散的磷光體區域為較佳,而非如顯示於圖1為磷光體混合。
在顯示於圖12中之元件裡,圖11的元件之CaS:Eu2 +
為SrS:Eu2 +
所替代。該元件同時證明具有優異的色域(NTSC的73%)和優異的發光當量(298)。在此情況中,如顯示於圖3-6中,形成離散的磷光體區域為較佳,而非如顯示於圖1為磷光體混合。
顯示於圖13的元件將藍色發光二極體與Sr1 - x
Bax
SiO4
:Eu2 +
及Sr2
Si5
N8
:Eu2 +
相結合。元件具有NTSC色域的72%,並具有發光當量241。
在第三應用中,照明元件含有與一或多個LED隔開的磷光體。此種元件之範例係顯示於圖8中沒有液晶顯示器14之元件。在此種具體實施例中,選擇磷光體配置以極大化發光當量和演色指數。如上在第一應用中所述之磷光體組合可為適合。
已詳細說明本發明,熟知本技術人士應明白,根據本揭示內容,可對本發明作修改,而不致背離此處說明之本發明概念之精神。因此並不希望本發明之範疇限於所解釋及說明的特定具體實施例。
1...半導體發光元件
1、34...LED
2...反射罩
4...磷光體
5...綠色/黃色磷光體
6...選擇性的透明層
7...選擇性透明材料
12...GaN晶粒
14(圖1)...反射罩引線架
14(圖8)...LCD面板
16、18...引線架
22...螢光材料
24...LED陣列
26...背光
36...間隔層
38...螢光層
39...磷光體層
40(圖1)...第二螢光材料
40(圖8)...漫射體
圖1顯示先前技術的缺紅弱點補償照明系統。
圖2顯示Sr2
Si5
N8
:Eu2 +
的激發光譜及數個磷光體的發射光譜。
圖3、4、5及6顯示本發明採用離散磷光體層以最小化磷光體交互作用的具體實施例。
圖7顯示包括藍色發光二極體和Y3
Al5
O1 2
:Ce3 +
及CaS:Eu2 +
磷光體之系統的模擬光譜和兩個實驗光譜。
圖8顯示本發明具體實施例之顯示器。
圖9、10、11、12和13顯示在圖8元件裡實施之LED和磷光體組合的五個範例。
圖14顯示Y3
Al5
O1 2
:Ce3 +
及CaS:Eu2 +
磷光體之激發和發射光譜。
圖15顯示一包括藍色發光二極體和Y3
Al5
O1 2
:Ce3 +
及Sr2
Si5
N8
:Eu2 +
磷光體之系統的兩個實驗光譜。
14...LCD面板
24...LED陣列
26...背光
39...磷光體層
40...漫射體
Claims (33)
- 一種波長變換系統,其包含:一半導體發光元件,其能夠發射具有一第一峰值波長之第一光線;一第一螢光材料層,其包含一第一波長變換材料,該材料能夠吸收該第一光線及發射具有長於該第一峰值波長之一第二峰值波長之第二光線;及一第二螢光材料層,其包含一第二波長變換材料,該材料能夠發射具有長於該第二峰值波長之一第三峰值波長之第三光線,其中該第二螢光材料層被置於鄰接該半導體發光元件;其中該第一螢光材料層及該第二螢光材料層中至少一者包含非為一波長變換材料之一第二材料,且該第一螢光材料層係透過一透明層與該第二螢光材料層分離。
- 如請求項1之系統,其中該第二螢光材料層覆蓋該半導體發光元件,及該第一螢光材料層覆蓋該透明層。
- 如請求項1之系統,其中:該第一峰值波長為藍色;該第二峰值波長為綠色;及該第三峰值波長為紅色。
- 如請求項1之系統,其中:該第一峰值波長為藍色;該第二峰值波長為黃色;及該第三峰值波長為紅色。
- 如請求項1之系統,其中該第一波長變換材料係選擇自由以下項目組成之群組:(Lu1-x-y-a-b Yx Gdy )3 (Al1-z Gaz )5 O12 :Cea 3+ Prb 3+ ,其中0<x<1、0<y<1、0<z<0.1、0<a<0.2及0<b<0.1;Lu3 Al5 O12 :Ce3+ ;Y3 Al5 O12 :Ce3+ ;(Sr1-a-b Cab Bac )Six Ny Oz :Eua 2+ ,其中a=0.002-0.2、b=0.0-0.25、c=0.0-0.25、x=1.5-2.5、y=1.5-2.5、z=1.5-2.5;SrSi2 N2 O2 :Eu2+ ;(Sr1-u-v-x Mgu Cav Bax )(Ga2-y-z Aly Inz S4 ):Eu2+ ;SrGa2 S4 :Eu2+ 及Sr1-x Bax SiO4 :Eu2+ 。
- 如請求項1之系統,其中該第二波長變換材料係選擇自由以下項目組成之群組:(Ca1-x Srx )S:Eu2+ ,其中0<x<1;CaS:Eu2+ ;SrS:Eu2+ ;(Sr1-x-y Bax Cay )2-z Si5-a Ala N8-a Oa :Euz 2+ ,其中0<a<5、0<x<1、0<y<1及0<z<1;及Sr2 Si5 N8 :Eu2+ 。
- 如請求項1之系統,其中該第二材料係選擇自由以下項目組成之群組:樹脂、聚矽氧及氧化矽。
- 如請求項1之系統,其中該第一螢光材料層及第二螢光材料層經配置以極大化該第一、第二及第三光線之一組合之一發光當量。
- 如請求項1之系統,其中該第一螢光材料層及第二螢光材料層經配置以極大化該第一、第二及第三光線之一組合之演色性指數。
- 一種波長變換元件,其包含:至少一半導體發光元件,其能夠發射具有一第一峰值波長之第一光線;一蓋板,其係與該至少一半導體發光元件隔開; 一第一波長變換材料,其係置於該蓋板之一或多個第一區域上,並能夠吸收該第一光線並發射具有一第二峰值波長之第二光線,該第二峰值波長係長於該第一峰值波長;及一第二波長變換材料,其係置於該蓋板之一或多個第二區域上,並能夠發射具有長於該第二峰值波長之一第三峰值波長之第三光線,該等第一區域係與該等第二區域相異。
- 如請求項10之元件,其中該第三光線與該第一光線及該第二光線相結合以形成看來為白色之混合光線。
- 如請求項10之元件,其中該第一波長變換材料及該第二波長變換材料經配置以極大化該第一、第二及第三光線之一組合之發光當量。
- 如請求項10之元件,其進一步包含一或多個濾色片。
- 如請求項13之元件,其中該第一波長變換材料及第二波長變換材料經配置以在該第一、第二以及第三光線受到該一或多個濾色片濾色之後極大化色彩之一色域。
- 如請求項10之元件,其中該第一波長變換材料及第二波長變換材料經沉積為離散的層。
- 如請求項15之元件,其中該第一波長變換材料覆蓋該第二波長變換材料。
- 如請求項10之元件,其中該第一波長變換材料係選擇自由以下項目組成之群組:(Lu1-x-y-a-b Yx Gdy )3 (Al1-z Gaz )5 O12 :Cea 3+ Prb 3+ ,其中0<x<1、0<y<1、0<z<0.1、0<a<0.2及 0<b<0.1;Lu3 Al5 O12 :Ce;Y3 Al5 O12 :Ce3+ ;(Sr1-a-b Cab Bac )Six Ny Oz :Eua 2+ ,其中a=0.002-0.2、b=0.0-0.25、c=0.0-0.25、x=1.5-2.5、y=1.5-2.5、z=1.5-2.5;SrSi2 N2 O2 :Eu2+ ;(Sr1-u-v-x Mgu Cav Bax )(Ga2-y-z Aly Inz S4 ):Eu2+ ;SrGa2 S4 :Eu2+ ;及Sr1-x Bax SiO4 :Eu2+ 。
- 如請求項10之元件,其中該第二波長變換材料係選擇自由以下項目組成之群組:(Ca1-x Srx )S:Eu2+ ,其中0<x1;CaS:Eu2+ ;SrS:Eu2+ ;(Sr1-x-y Bax Cay )2-z Si5-a Ala N8-a Oa :Euz 2+ ,其中0<a<5、0<x<1、0<y<1及0<z<1,以及Sr2 Si5 N8 :Eu2+ 。
- 如請求項10之元件,其進一步包含一LCD。
- 一種波長變換之方法,其包含:提供一半導體發光元件,其能夠自一發光表面發射具有一第一峰值波長之第一光線;在該第一光線之一或多個第一路徑中提供一第一波長變換材料,其能夠吸收該第一峰值波長之光線,並發射具有長於該第一峰值波長之一第二峰值波長之第二光線;在該第一光線之一或多個第二路徑中提供一第二波長變換材料,其能夠發射具有長於該第二峰值波長之一第三峰值波長之第三光線;及配置該第一波長變換材料及該第二波長變換材料,以使該等第一與第二路徑彼此係實質相異。
- 如請求項20之方法,其中該第一波長變換材料及該第二 波長變換材料中至少一項係鄰接該發光表面。
- 如請求項20之方法,其中該第一波長變換材料及該第二波長變換材料中至少一項係和該發光表面隔開。
- 如請求項20之方法,其中該第一波長變換材料及該第二波長變換材料皆鄰接該發光表面。
- 一種波長變換系統,其包含:一具有一發光表面之半導體發光元件,該發光表面能夠發射具有一第一峰值波長之第一光線;一第一波長變換材料,其係置於該發光表面之一或多個第一部分上,並能夠吸收該第一光線並發射具有一第二峰值波長之第二光線,該第二峰值波長係長於該第一峰值波長;及一第二波長變換材料,其係置於該發光表面之一或多個第二部分上,並能夠發射具有長於該第二峰值波長之一第三峰值波長之第三光線,該等第一部分係與該等第二部分相異。
- 如請求項24之系統,其中:該一或多個第一部分係鄰接該一或多個第二部分。
- 如請求項24之系統,其中:該等第一部分包含該發光表面上之一第一複數個離散區域;及該等第二部分包含該發光表面上之一第二複數個離散區域。
- 如請求項26之系統,其中該第一複數個離散區域及該第 二複數個離散區域形成一棋盤圖案。
- 如請求項24之系統,其中:該第一波長變換材料亦覆蓋該第二波長變換材料。
- 如請求項24之系統,其進一步包含能夠發射具有一第四峰值波長之一第四光線之一第三波長變換材料。
- 如請求項29之系統,其中:該第一峰值波長為UV;該第二峰值波長為藍色;該第三峰值波長為紅色;及該第四峰值波長為綠色。
- 如請求項30之系統,其中:該第三波長變換材料覆蓋該第二波長變換材料;及該第一波長變換材料覆蓋該第三波長變換材料。
- 如請求項29之系統,其中該第三波長變換材料係置於該發光表面之一或多個第三部分上,該等第三部分係與該等第一與第二部分相異。
- 如請求項24之系統,其中該第一波長變換材料包含第二波長變換材料之一數量。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/785,616 US7250715B2 (en) | 2004-02-23 | 2004-02-23 | Wavelength converted semiconductor light emitting devices |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200603434A TW200603434A (en) | 2006-01-16 |
TWI394287B true TWI394287B (zh) | 2013-04-21 |
Family
ID=34711903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094104926A TWI394287B (zh) | 2004-02-23 | 2005-02-18 | 波長可變換之半導體發光元件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7250715B2 (zh) |
EP (2) | EP2381303A3 (zh) |
JP (3) | JP4969045B2 (zh) |
AT (1) | ATE536638T1 (zh) |
TW (1) | TWI394287B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107195752A (zh) * | 2017-05-26 | 2017-09-22 | 青岛海信电器股份有限公司 | 一种led、背光模组和显示装置 |
Families Citing this family (318)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7005679B2 (en) * | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
KR100540848B1 (ko) * | 2004-01-02 | 2006-01-11 | 주식회사 메디아나전자 | 이중 몰드로 구성된 백색 발광다이오드 소자 및 그 제조방법 |
KR101157313B1 (ko) * | 2004-04-27 | 2012-06-18 | 파나소닉 주식회사 | 형광체 조성물과 그 제조방법, 및 그 형광체 조성물을 이용한 발광 장치 |
US20070267646A1 (en) * | 2004-06-03 | 2007-11-22 | Philips Lumileds Lighting Company, Llc | Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic |
US7361938B2 (en) | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
JP2008505433A (ja) * | 2004-06-29 | 2008-02-21 | 松下電器産業株式会社 | 照明光源 |
JP2006019409A (ja) * | 2004-06-30 | 2006-01-19 | Mitsubishi Chemicals Corp | 発光装置並びにそれを用いた照明、ディスプレイ用バックライト及びディスプレイ |
WO2006005005A2 (en) | 2004-07-06 | 2006-01-12 | Sarnoff Corporation | Efficient, green-emitting phosphors, and combinations with red-emitting phosphors |
TW200614548A (en) * | 2004-07-09 | 2006-05-01 | Matsushita Electric Ind Co Ltd | Light-emitting device |
US8017035B2 (en) * | 2004-08-04 | 2011-09-13 | Intematix Corporation | Silicate-based yellow-green phosphors |
US20060038198A1 (en) * | 2004-08-23 | 2006-02-23 | Chua Janet B Y | Device and method for producing output light having a wavelength spectrum in the visible range and the infrared range using a fluorescent material |
JP2006257385A (ja) * | 2004-09-09 | 2006-09-28 | Showa Denko Kk | 酸窒化物系蛍光体及びその製造法 |
JP4674348B2 (ja) * | 2004-09-22 | 2011-04-20 | 独立行政法人物質・材料研究機構 | 蛍光体とその製造方法および発光器具 |
DE102005046420B4 (de) * | 2004-10-04 | 2019-07-11 | Stanley Electric Co. Ltd. | Verfahren zur Herstellung einer Licht emittierenden Halbleitervorrichtung |
US7679672B2 (en) * | 2004-10-14 | 2010-03-16 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Electronic flash, imaging device and method for producing a flash of light having a wavelength spectrum in the visible range and the infrared range using a fluorescent material |
US7462502B2 (en) | 2004-11-12 | 2008-12-09 | Philips Lumileds Lighting Company, Llc | Color control by alteration of wavelength converting element |
US8106584B2 (en) * | 2004-12-24 | 2012-01-31 | Kyocera Corporation | Light emitting device and illumination apparatus |
JP2006213910A (ja) * | 2005-01-06 | 2006-08-17 | Matsushita Electric Ind Co Ltd | 酸窒化物蛍光体及び発光装置 |
US7564180B2 (en) | 2005-01-10 | 2009-07-21 | Cree, Inc. | Light emission device and method utilizing multiple emitters and multiple phosphors |
US8125137B2 (en) | 2005-01-10 | 2012-02-28 | Cree, Inc. | Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same |
JP4556122B2 (ja) | 2005-01-27 | 2010-10-06 | ソニー株式会社 | 情報処理装置および方法、並びに回収基板 |
WO2006095285A1 (en) * | 2005-03-09 | 2006-09-14 | Philips Intellectual Property & Standards Gmbh | Illumination system comprising a radiation source and a fluorescent material |
JP5490407B2 (ja) | 2005-03-14 | 2014-05-14 | コーニンクレッカ フィリップス エヌ ヴェ | 多結晶セラミック構造の蛍光体、及び前記蛍光体を有する発光素子 |
US7276183B2 (en) * | 2005-03-25 | 2007-10-02 | Sarnoff Corporation | Metal silicate-silica-based polymorphous phosphors and lighting devices |
DE102005019376A1 (de) * | 2005-04-26 | 2006-11-02 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Lumineszenzkonversions-LED |
JP2007049114A (ja) | 2005-05-30 | 2007-02-22 | Sharp Corp | 発光装置とその製造方法 |
US9412926B2 (en) | 2005-06-10 | 2016-08-09 | Cree, Inc. | High power solid-state lamp |
JP2007110090A (ja) * | 2005-09-13 | 2007-04-26 | Sony Corp | GaN系半導体発光素子、発光装置、画像表示装置、面状光源装置、及び、液晶表示装置組立体 |
JP4898332B2 (ja) * | 2005-09-15 | 2012-03-14 | セイコーインスツル株式会社 | 表示装置 |
DE102005062514A1 (de) * | 2005-09-28 | 2007-03-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
EP1957607B1 (en) * | 2005-11-24 | 2012-02-01 | Koninklijke Philips Electronics N.V. | Display device with solid state fluorescent material |
US20070125984A1 (en) * | 2005-12-01 | 2007-06-07 | Sarnoff Corporation | Phosphors protected against moisture and LED lighting devices |
US8906262B2 (en) * | 2005-12-02 | 2014-12-09 | Lightscape Materials, Inc. | Metal silicate halide phosphors and LED lighting devices using the same |
EP1963743B1 (en) | 2005-12-21 | 2016-09-07 | Cree, Inc. | Lighting device |
BRPI0620413A2 (pt) | 2005-12-21 | 2011-11-08 | Cree Led Lighting Solutions | dispositivo de iluminação e método de iluminação |
BRPI0620397A2 (pt) | 2005-12-22 | 2011-11-16 | Cree Led Lighting Solutions | dispositivo de iluminação |
CN101385145B (zh) | 2006-01-05 | 2011-06-08 | 伊鲁米特克斯公司 | 用于引导来自led的光的分立光学装置 |
US8441179B2 (en) | 2006-01-20 | 2013-05-14 | Cree, Inc. | Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources |
EP2002488A4 (en) * | 2006-01-20 | 2012-05-30 | Cree Inc | DISTRIBUTION OF SPECTRAL CONTENT IN SOLID PHYSICIANS BY SPATIAL SEPARATION OF LUMIPHORIDE FILMS |
JP2009525594A (ja) * | 2006-01-31 | 2009-07-09 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 白色光源 |
JP4992250B2 (ja) * | 2006-03-01 | 2012-08-08 | 日亜化学工業株式会社 | 発光装置 |
CN101401222B (zh) * | 2006-03-06 | 2010-12-01 | 皇家飞利浦电子股份有限公司 | 发光二极管模块 |
US20090014733A1 (en) * | 2006-03-06 | 2009-01-15 | Koninklijke Philips Electronics N.V. | Light-emitting diode module |
JP4880329B2 (ja) * | 2006-03-06 | 2012-02-22 | 株式会社小糸製作所 | 車両用灯具 |
JP4931628B2 (ja) * | 2006-03-09 | 2012-05-16 | セイコーインスツル株式会社 | 照明装置及びこれを備える表示装置 |
US7682850B2 (en) * | 2006-03-17 | 2010-03-23 | Philips Lumileds Lighting Company, Llc | White LED for backlight with phosphor plates |
JP4969119B2 (ja) * | 2006-03-20 | 2012-07-04 | 日本碍子株式会社 | 発光ダイオード装置 |
US7821194B2 (en) * | 2006-04-18 | 2010-10-26 | Cree, Inc. | Solid state lighting devices including light mixtures |
US8513875B2 (en) | 2006-04-18 | 2013-08-20 | Cree, Inc. | Lighting device and lighting method |
US9084328B2 (en) | 2006-12-01 | 2015-07-14 | Cree, Inc. | Lighting device and lighting method |
US8998444B2 (en) * | 2006-04-18 | 2015-04-07 | Cree, Inc. | Solid state lighting devices including light mixtures |
WO2007123938A2 (en) | 2006-04-18 | 2007-11-01 | Cree Led Lighting Solutions, Inc. | Lighting device and lighting method |
BRPI0710461A2 (pt) | 2006-04-20 | 2011-08-16 | Cree Led Lighting Solutions | dispositivo de iluminação e método de iluminação |
KR100799864B1 (ko) * | 2006-04-21 | 2008-01-31 | 삼성전기주식회사 | Led 패키지 |
CN101432897B (zh) * | 2006-04-25 | 2011-04-20 | 皇家飞利浦电子股份有限公司 | 产生白光的荧光照明 |
DE102006024165A1 (de) * | 2006-05-23 | 2007-11-29 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Optoelektronischer Halbleiterchip mit einem Wellenlängenkonversionsstoff sowie optoelektronisches Halbleiterbauelement mit einem solchen Halbleiterchip und Verfahren zur Herstellung des optoelektronischen Halbleiterchips |
AU2007256972A1 (en) * | 2006-05-30 | 2007-12-13 | University Of Georgia Research Foundation | White phosphors, methods of making white phosphors, white light emitting leds, methods of making white light emitting LEDs, and light bulb structures |
JP2009539227A (ja) | 2006-05-31 | 2009-11-12 | クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド | 照明装置、および照明方法 |
US8080828B2 (en) | 2006-06-09 | 2011-12-20 | Philips Lumileds Lighting Company, Llc | Low profile side emitting LED with window layer and phosphor layer |
US7626210B2 (en) * | 2006-06-09 | 2009-12-01 | Philips Lumileds Lighting Company, Llc | Low profile side emitting LED |
US20090128781A1 (en) * | 2006-06-13 | 2009-05-21 | Kenneth Li | LED multiplexer and recycler and micro-projector incorporating the Same |
KR100901947B1 (ko) * | 2006-07-14 | 2009-06-10 | 삼성전자주식회사 | 반도체 나노결정을 이용하는 백색 발광 다이오드 및 그의제조방법 |
CN100426095C (zh) * | 2006-08-14 | 2008-10-15 | 友达光电股份有限公司 | 背光模块的光源结构 |
KR100771772B1 (ko) * | 2006-08-25 | 2007-10-30 | 삼성전기주식회사 | 백색 led 모듈 |
US8087960B2 (en) | 2006-10-02 | 2012-01-03 | Illumitex, Inc. | LED system and method |
CN101605867B (zh) | 2006-10-03 | 2013-05-08 | 渲染材料公司 | 金属硅酸盐卤化物磷光体以及使用它们的led照明器件 |
TW200822403A (en) * | 2006-10-12 | 2008-05-16 | Matsushita Electric Ind Co Ltd | Light-emitting device and method for manufacturing the same |
SK51202007A3 (sk) * | 2006-10-24 | 2008-08-05 | Sumitomo Chemical Company, Limited | Prostriedok živice rozptyľujúcej svetlo |
JP5168880B2 (ja) * | 2006-10-31 | 2013-03-27 | 東芝ライテック株式会社 | 発光装置 |
US8029155B2 (en) | 2006-11-07 | 2011-10-04 | Cree, Inc. | Lighting device and lighting method |
JP2008116849A (ja) * | 2006-11-07 | 2008-05-22 | Sony Corp | 表示装置 |
JP5367218B2 (ja) * | 2006-11-24 | 2013-12-11 | シャープ株式会社 | 蛍光体の製造方法および発光装置の製造方法 |
WO2008067441A1 (en) | 2006-11-30 | 2008-06-05 | Cree Led Lighting Solutions, Inc. | Lighting device and lighting method |
US9441793B2 (en) | 2006-12-01 | 2016-09-13 | Cree, Inc. | High efficiency lighting device including one or more solid state light emitters, and method of lighting |
KR100930171B1 (ko) | 2006-12-05 | 2009-12-07 | 삼성전기주식회사 | 백색 발광장치 및 이를 이용한 백색 광원 모듈 |
WO2008068689A1 (en) * | 2006-12-05 | 2008-06-12 | Philips Intellectual Property & Standards Gmbh | Illumination device, particularly with luminescent ceramics |
CN101611259B (zh) | 2006-12-07 | 2012-06-27 | 科锐公司 | 照明装置和照明方法 |
US7902560B2 (en) * | 2006-12-15 | 2011-03-08 | Koninklijke Philips Electronics N.V. | Tunable white point light source using a wavelength converting element |
JP2010514151A (ja) | 2006-12-15 | 2010-04-30 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 二色性の表面を備えた照明系 |
JP2008166782A (ja) * | 2006-12-26 | 2008-07-17 | Seoul Semiconductor Co Ltd | 発光素子 |
KR101423456B1 (ko) * | 2006-12-28 | 2014-07-29 | 서울반도체 주식회사 | 형광막 구조를 포함하는 백라이팅 유닛 |
US8232564B2 (en) * | 2007-01-22 | 2012-07-31 | Cree, Inc. | Wafer level phosphor coating technique for warm light emitting diodes |
US9159888B2 (en) | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
KR20090119862A (ko) | 2007-01-22 | 2009-11-20 | 크리 엘이디 라이팅 솔루션즈, 인크. | 고장 내성 발광기, 고장 내성 발광기를 포함하는 시스템 및 고장 내성 발광기를 제조하는 방법 |
WO2008091846A2 (en) | 2007-01-22 | 2008-07-31 | Cree Led Lighting Solutions, Inc. | Illumination devices using externally interconnected arrays of light emitting devices, and methods of fabricating same |
US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US20080198572A1 (en) | 2007-02-21 | 2008-08-21 | Medendorp Nicholas W | LED lighting systems including luminescent layers on remote reflectors |
EP2122231B1 (en) * | 2007-02-22 | 2014-10-01 | Cree, Inc. | Lighting devices, methods of lighting, light filters and methods of filtering light |
TWI326923B (en) * | 2007-03-07 | 2010-07-01 | Lite On Technology Corp | White light emitting diode |
KR100862532B1 (ko) * | 2007-03-13 | 2008-10-09 | 삼성전기주식회사 | 발광 다이오드 패키지 제조방법 |
US7851987B2 (en) * | 2007-03-30 | 2010-12-14 | Eastman Kodak Company | Color electro-luminescent display with improved efficiency |
JP2010525512A (ja) | 2007-04-17 | 2010-07-22 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 照明システム |
JP2010527510A (ja) | 2007-05-08 | 2010-08-12 | クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド | 照明デバイスおよび照明方法 |
CN101711325B (zh) | 2007-05-08 | 2013-07-10 | 科锐公司 | 照明装置和照明方法 |
CN101711326B (zh) | 2007-05-08 | 2012-12-05 | 科锐公司 | 照明装置和照明方法 |
JP5325208B2 (ja) | 2007-05-08 | 2013-10-23 | クリー インコーポレイテッド | 照明デバイスおよび照明方法 |
EP2153113B1 (en) | 2007-05-08 | 2016-01-06 | Cree, Inc. | Lighting device and lighting method |
JP2008283155A (ja) * | 2007-05-14 | 2008-11-20 | Sharp Corp | 発光装置、照明機器および液晶表示装置 |
US7942556B2 (en) * | 2007-06-18 | 2011-05-17 | Xicato, Inc. | Solid state illumination device |
JP2009016689A (ja) * | 2007-07-06 | 2009-01-22 | Toshiba Lighting & Technology Corp | 照明装置 |
EP2190035A4 (en) * | 2007-07-30 | 2014-01-08 | Sharp Kk | LIGHT-EMITTING DEVICE, LIGHTING APPARATUS, AND WHITE HALL WITH LIGHTING APPARATUS |
WO2009016585A2 (en) * | 2007-08-02 | 2009-02-05 | Koninklijke Philips Electronics N.V. | Color conversion device |
US7863635B2 (en) | 2007-08-07 | 2011-01-04 | Cree, Inc. | Semiconductor light emitting devices with applied wavelength conversion materials |
US20090039375A1 (en) * | 2007-08-07 | 2009-02-12 | Cree, Inc. | Semiconductor light emitting devices with separated wavelength conversion materials and methods of forming the same |
US7810956B2 (en) * | 2007-08-23 | 2010-10-12 | Koninklijke Philips Electronics N.V. | Light source including reflective wavelength-converting layer |
DE102007052181A1 (de) * | 2007-09-20 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
EP2210036B1 (en) | 2007-10-10 | 2016-11-23 | Cree, Inc. | Lighting device and method of making |
US7984999B2 (en) | 2007-10-17 | 2011-07-26 | Xicato, Inc. | Illumination device with light emitting diodes and moveable light adjustment member |
US9086213B2 (en) * | 2007-10-17 | 2015-07-21 | Xicato, Inc. | Illumination device with light emitting diodes |
US20090108269A1 (en) * | 2007-10-26 | 2009-04-30 | Led Lighting Fixtures, Inc. | Illumination device having one or more lumiphors, and methods of fabricating same |
US8376577B2 (en) * | 2007-11-05 | 2013-02-19 | Xicato, Inc. | Modular solid state lighting device |
US8946987B2 (en) * | 2007-11-07 | 2015-02-03 | Industrial Technology Research Institute | Light emitting device and fabricating method thereof |
US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
US8878219B2 (en) | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
US10008637B2 (en) | 2011-12-06 | 2018-06-26 | Cree, Inc. | Light emitter devices and methods with reduced dimensions and improved light output |
DE102008006990A1 (de) | 2008-01-31 | 2009-08-06 | Osram Opto Semiconductors Gmbh | Hintergrundbeleuchtungseinheit für eine Hintergrundbeleuchtung eines Bildschirms und Bildschirmeinheit des Bildschirms |
US20090196015A1 (en) * | 2008-02-04 | 2009-08-06 | Kismart Corporation | Lighting module with wavelength converting structure and manufacturing method for the same |
KR20100122485A (ko) | 2008-02-08 | 2010-11-22 | 일루미텍스, 인크. | 발광체층 쉐이핑을 위한 시스템 및 방법 |
CN101960918B (zh) * | 2008-02-27 | 2014-08-27 | 皇家飞利浦电子股份有限公司 | 具有led以及一个或多个透射窗的照明设备 |
EP2328190A3 (en) * | 2008-03-19 | 2011-06-15 | Samsung LED Co., Ltd. | White light emitting device and white light source module using the same |
US8637883B2 (en) * | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
US8916890B2 (en) | 2008-03-19 | 2014-12-23 | Cree, Inc. | Light emitting diodes with light filters |
US8350461B2 (en) | 2008-03-28 | 2013-01-08 | Cree, Inc. | Apparatus and methods for combining light emitters |
CN102017198A (zh) * | 2008-04-23 | 2011-04-13 | 皇家飞利浦电子股份有限公司 | 发光器件 |
DE102008020882A1 (de) | 2008-04-25 | 2009-10-29 | Ledon Lighting Jennersdorf Gmbh | Lichtemittierende Vorrichtung und Verfahren zur Bereitstellung einer lichtemittierenden Vorrichtung mit vordefinierten optischen Eigenschaften des emittierten Lichts |
US7868340B2 (en) * | 2008-05-30 | 2011-01-11 | Bridgelux, Inc. | Method and apparatus for generating white light from solid state light emitting devices |
US8240875B2 (en) | 2008-06-25 | 2012-08-14 | Cree, Inc. | Solid state linear array modules for general illumination |
US8076833B2 (en) * | 2008-06-30 | 2011-12-13 | Bridgelux, Inc. | Methods and apparatuses for enhancing heat dissipation from a light emitting device |
JP2011530194A (ja) * | 2008-08-04 | 2011-12-15 | ソラア インコーポレーテッド | 物質および蛍光体を含んだ非分極性あるいは半極性のガリウムを用いた白色灯デバイス |
CA2730719A1 (en) * | 2008-08-08 | 2010-02-11 | Xicato, Inc. | Color tunable light source |
TW201011942A (en) * | 2008-09-11 | 2010-03-16 | Advanced Optoelectronic Tech | Method and system for configuring high CRI LED |
EP2175436A1 (en) | 2008-10-08 | 2010-04-14 | Richard Peter James Barton | Dot matrix and segmented displays with uniform illumination |
TW201015170A (en) * | 2008-10-13 | 2010-04-16 | Advanced Optoelectronic Tech | System and method for configuring LED BLU with high NTSC |
JP5440064B2 (ja) * | 2008-10-21 | 2014-03-12 | 東芝ライテック株式会社 | 照明装置 |
US20100109025A1 (en) * | 2008-11-05 | 2010-05-06 | Koninklijke Philips Electronics N.V. | Over the mold phosphor lens for an led |
KR101154758B1 (ko) * | 2008-11-18 | 2012-06-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 이를 구비한 발광소자 패키지 |
US8220971B2 (en) | 2008-11-21 | 2012-07-17 | Xicato, Inc. | Light emitting diode module with three part color matching |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
US8169135B2 (en) * | 2008-12-17 | 2012-05-01 | Lednovation, Inc. | Semiconductor lighting device with wavelength conversion on back-transferred light path |
TWI404239B (zh) * | 2009-01-16 | 2013-08-01 | Foxsemicon Integrated Tech Inc | 照明裝置 |
DE102009005907A1 (de) * | 2009-01-23 | 2010-07-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
US20100187961A1 (en) * | 2009-01-27 | 2010-07-29 | Keith Scott | Phosphor housing for light emitting diode lamp |
CA2751030A1 (en) | 2009-01-28 | 2010-08-05 | Koninklijke Philips Electronics N.V. | Illumination system with remote phosphor layer and/or scattering layer |
WO2010090289A1 (ja) * | 2009-02-05 | 2010-08-12 | シーシーエス株式会社 | Led発光装置 |
JP5330855B2 (ja) * | 2009-02-19 | 2013-10-30 | スタンレー電気株式会社 | 半導体発光装置 |
US7967652B2 (en) | 2009-02-19 | 2011-06-28 | Cree, Inc. | Methods for combining light emitting devices in a package and packages including combined light emitting devices |
JP5345414B2 (ja) * | 2009-02-19 | 2013-11-20 | スタンレー電気株式会社 | 半導体発光装置 |
US8333631B2 (en) * | 2009-02-19 | 2012-12-18 | Cree, Inc. | Methods for combining light emitting devices in a package and packages including combined light emitting devices |
US20140175377A1 (en) * | 2009-04-07 | 2014-06-26 | Soraa, Inc. | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors |
US8648372B2 (en) * | 2009-04-14 | 2014-02-11 | Panasonic Corporation | Light-emitting device, method for adjusting optical properties, and method for manufacturing light-emitting devices |
US10422503B2 (en) | 2009-10-30 | 2019-09-24 | Ideal Industries Lighting Llc | One-piece multi-lens optical member and method of manufacture |
US8337030B2 (en) | 2009-05-13 | 2012-12-25 | Cree, Inc. | Solid state lighting devices having remote luminescent material-containing element, and lighting methods |
JP2010272687A (ja) * | 2009-05-21 | 2010-12-02 | Toshiba Lighting & Technology Corp | 照明装置および照明器具 |
US8921876B2 (en) | 2009-06-02 | 2014-12-30 | Cree, Inc. | Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements |
US20110012141A1 (en) * | 2009-07-15 | 2011-01-20 | Le Toquin Ronan P | Single-color wavelength-converted light emitting devices |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
FI20095967A (fi) * | 2009-09-18 | 2011-03-19 | Valoya Oy | Valaisinsovitelma |
US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
US9293644B2 (en) | 2009-09-18 | 2016-03-22 | Soraa, Inc. | Power light emitting diode and method with uniform current density operation |
US9293667B2 (en) | 2010-08-19 | 2016-03-22 | Soraa, Inc. | System and method for selected pump LEDs with multiple phosphors |
WO2011037877A1 (en) | 2009-09-25 | 2011-03-31 | Cree, Inc. | Lighting device with low glare and high light level uniformity |
TWI426629B (zh) * | 2009-10-05 | 2014-02-11 | Everlight Electronics Co Ltd | 白光發光裝置、其製造方法及應用 |
US9435493B2 (en) | 2009-10-27 | 2016-09-06 | Cree, Inc. | Hybrid reflector system for lighting device |
TW201123548A (en) * | 2009-12-25 | 2011-07-01 | Ind Tech Res Inst | A multi-layer stacked LED package |
JP2011138631A (ja) * | 2009-12-25 | 2011-07-14 | Canon Inc | 画像表示装置 |
CN102116959B (zh) * | 2009-12-31 | 2013-08-14 | 北京京东方光电科技有限公司 | 液晶显示器的光学元件及其制作方法 |
US20110164430A1 (en) * | 2010-01-07 | 2011-07-07 | Kenneth Li | Illuminator using light emitting diode light recycling with collimation |
US9631782B2 (en) * | 2010-02-04 | 2017-04-25 | Xicato, Inc. | LED-based rectangular illumination device |
KR100969100B1 (ko) | 2010-02-12 | 2010-07-09 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
US8882284B2 (en) | 2010-03-03 | 2014-11-11 | Cree, Inc. | LED lamp or bulb with remote phosphor and diffuser configuration with enhanced scattering properties |
US9024517B2 (en) | 2010-03-03 | 2015-05-05 | Cree, Inc. | LED lamp with remote phosphor and diffuser configuration utilizing red emitters |
US9275979B2 (en) * | 2010-03-03 | 2016-03-01 | Cree, Inc. | Enhanced color rendering index emitter through phosphor separation |
US9310030B2 (en) | 2010-03-03 | 2016-04-12 | Cree, Inc. | Non-uniform diffuser to scatter light into uniform emission pattern |
US9500325B2 (en) | 2010-03-03 | 2016-11-22 | Cree, Inc. | LED lamp incorporating remote phosphor with heat dissipation features |
US10359151B2 (en) | 2010-03-03 | 2019-07-23 | Ideal Industries Lighting Llc | Solid state lamp with thermal spreading elements and light directing optics |
US9316361B2 (en) | 2010-03-03 | 2016-04-19 | Cree, Inc. | LED lamp with remote phosphor and diffuser configuration |
US8931933B2 (en) | 2010-03-03 | 2015-01-13 | Cree, Inc. | LED lamp with active cooling element |
US9062830B2 (en) | 2010-03-03 | 2015-06-23 | Cree, Inc. | High efficiency solid state lamp and bulb |
US8632196B2 (en) | 2010-03-03 | 2014-01-21 | Cree, Inc. | LED lamp incorporating remote phosphor and diffuser with heat dissipation features |
US20110227102A1 (en) * | 2010-03-03 | 2011-09-22 | Cree, Inc. | High efficacy led lamp with remote phosphor and diffuser configuration |
US9625105B2 (en) | 2010-03-03 | 2017-04-18 | Cree, Inc. | LED lamp with active cooling element |
US8562161B2 (en) | 2010-03-03 | 2013-10-22 | Cree, Inc. | LED based pedestal-type lighting structure |
US9057511B2 (en) | 2010-03-03 | 2015-06-16 | Cree, Inc. | High efficiency solid state lamp and bulb |
JP2013521647A (ja) * | 2010-03-03 | 2013-06-10 | クリー インコーポレイテッド | リン光体分離を通じて演色評価数を高めた放射体 |
US8104908B2 (en) * | 2010-03-04 | 2012-01-31 | Xicato, Inc. | Efficient LED-based illumination module with high color rendering index |
WO2011115820A1 (en) * | 2010-03-19 | 2011-09-22 | Nitto Denko Corporation | Garnet-based phosphor ceramic sheets for light emitting device |
WO2011125363A1 (ja) * | 2010-04-07 | 2011-10-13 | シャープ株式会社 | 有機el素子、有機elディスプレイおよび有機el表示装置 |
EP2564115B1 (en) | 2010-04-26 | 2015-03-25 | Xicato, Inc. | Led-based illumination module attachment to a light fixture |
EP2567595A2 (en) * | 2010-05-04 | 2013-03-13 | Xicato, Inc. | Led illumination device with communication port for transmitting information associated with the device |
DE102010021341A1 (de) * | 2010-05-22 | 2011-11-24 | Merck Patent Gmbh | Leuchtstoffe |
US8684559B2 (en) | 2010-06-04 | 2014-04-01 | Cree, Inc. | Solid state light source emitting warm light with high CRI |
US8519714B2 (en) | 2010-06-18 | 2013-08-27 | Xicato, Inc. | LED-based illumination module on-board diagnostics |
US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
US10451251B2 (en) | 2010-08-02 | 2019-10-22 | Ideal Industries Lighting, LLC | Solid state lamp with light directing optics and diffuser |
JP5231609B2 (ja) * | 2010-12-08 | 2013-07-10 | シャープ株式会社 | 発光装置及びその製造方法 |
JP2012195552A (ja) * | 2010-10-13 | 2012-10-11 | Sharp Corp | 発光装置及びその製造方法 |
JP5635832B2 (ja) * | 2010-08-05 | 2014-12-03 | スタンレー電気株式会社 | 半導体発光装置 |
CN102376860A (zh) | 2010-08-05 | 2012-03-14 | 夏普株式会社 | 发光装置及其制造方法 |
US20120051045A1 (en) | 2010-08-27 | 2012-03-01 | Xicato, Inc. | Led Based Illumination Module Color Matched To An Arbitrary Light Source |
US8297767B2 (en) | 2010-09-07 | 2012-10-30 | Xicato, Inc. | LED-based illumination modules with PTFE color converting surfaces |
US9648673B2 (en) | 2010-11-05 | 2017-05-09 | Cree, Inc. | Lighting device with spatially segregated primary and secondary emitters |
WO2012075018A1 (en) | 2010-12-01 | 2012-06-07 | Nitto Denko Corporation | Emissive ceramic materials having a dopant concentration gradient and methods of making and using the same |
US8556469B2 (en) | 2010-12-06 | 2013-10-15 | Cree, Inc. | High efficiency total internal reflection optic for solid state lighting luminaires |
DE102010055265A1 (de) * | 2010-12-20 | 2012-06-21 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
WO2012088404A1 (en) * | 2010-12-23 | 2012-06-28 | Qd Vision, Inc. | Quantum dot containing optical element |
WO2012091973A1 (en) * | 2010-12-29 | 2012-07-05 | 3M Innovative Properties Company | Remote phosphor led device with broadband output and controllable color |
US8425065B2 (en) | 2010-12-30 | 2013-04-23 | Xicato, Inc. | LED-based illumination modules with thin color converting layers |
US20140022761A1 (en) * | 2011-01-21 | 2014-01-23 | Osram Sylvania Inc. | Luminescent Converter and LED Light Source Containing Same |
US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
US9234655B2 (en) | 2011-02-07 | 2016-01-12 | Cree, Inc. | Lamp with remote LED light source and heat dissipating elements |
US9068701B2 (en) | 2012-01-26 | 2015-06-30 | Cree, Inc. | Lamp structure with remote LED light source |
US11251164B2 (en) * | 2011-02-16 | 2022-02-15 | Creeled, Inc. | Multi-layer conversion material for down conversion in solid state lighting |
CN103476903B (zh) | 2011-02-24 | 2016-08-24 | 日东电工株式会社 | 具有磷光体组分的发光复合物 |
US8899767B2 (en) | 2011-03-31 | 2014-12-02 | Xicato, Inc. | Grid structure on a transmissive layer of an LED-based illumination module |
US9236530B2 (en) | 2011-04-01 | 2016-01-12 | Soraa, Inc. | Miscut bulk substrates |
CN103636010A (zh) | 2011-04-11 | 2014-03-12 | 克利公司 | 包括绿移红色组件的固态照明设备 |
KR101781437B1 (ko) * | 2011-04-29 | 2017-09-25 | 삼성전자주식회사 | 백색 발광 장치 및 이를 이용한 디스플레이 및 조명장치 |
US8847198B2 (en) * | 2011-05-26 | 2014-09-30 | Micron Technology, Inc. | Light emitting devices with built-in chromaticity conversion and methods of manufacturing |
WO2012168821A1 (en) * | 2011-06-10 | 2012-12-13 | Koninklijke Philips Electronics N.V. | A phosphor enhanced light source for presenting a visible pattern and a luminaire |
US10211380B2 (en) | 2011-07-21 | 2019-02-19 | Cree, Inc. | Light emitting devices and components having improved chemical resistance and related methods |
JP2014525146A (ja) | 2011-07-21 | 2014-09-25 | クリー インコーポレイテッド | 発光デバイス、パッケージ、部品、ならびに改良された化学抵抗性のための方法および関連する方法 |
US10686107B2 (en) | 2011-07-21 | 2020-06-16 | Cree, Inc. | Light emitter devices and components with improved chemical resistance and related methods |
US8449129B2 (en) | 2011-08-02 | 2013-05-28 | Xicato, Inc. | LED-based illumination device with color converting surfaces |
US8403529B2 (en) | 2011-08-02 | 2013-03-26 | Xicato, Inc. | LED-based illumination module with preferentially illuminated color converting surfaces |
US9646827B1 (en) | 2011-08-23 | 2017-05-09 | Soraa, Inc. | Method for smoothing surface of a substrate containing gallium and nitrogen |
US8485692B2 (en) | 2011-09-09 | 2013-07-16 | Xicato, Inc. | LED-based light source with sharply defined field angle |
JP2011249856A (ja) * | 2011-09-14 | 2011-12-08 | Toshiba Corp | 半導体発光装置 |
WO2013040333A1 (en) * | 2011-09-14 | 2013-03-21 | Express Imaging Systems, Llc | Apparatus, method to enhance color contrast in phosphor-based solid state lights |
US8858045B2 (en) | 2011-12-05 | 2014-10-14 | Xicato, Inc. | Reflector attachment to an LED-based illumination module |
US9496466B2 (en) | 2011-12-06 | 2016-11-15 | Cree, Inc. | Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction |
RU2502917C2 (ru) * | 2011-12-30 | 2013-12-27 | Закрытое Акционерное Общество "Научно-Производственная Коммерческая Фирма "Элтан Лтд" | Светодиодный источник белого света с комбинированным удаленным фотолюминесцентным конвертером |
US8820951B2 (en) | 2012-02-06 | 2014-09-02 | Xicato, Inc. | LED-based light source with hybrid spot and general lighting characteristics |
US8957580B2 (en) * | 2012-02-13 | 2015-02-17 | Cree, Inc. | Lighting device including multiple wavelength conversion material layers |
US9343441B2 (en) * | 2012-02-13 | 2016-05-17 | Cree, Inc. | Light emitter devices having improved light output and related methods |
US8779687B2 (en) | 2012-02-13 | 2014-07-15 | Xicato, Inc. | Current routing to multiple LED circuits |
US8946747B2 (en) | 2012-02-13 | 2015-02-03 | Cree, Inc. | Lighting device including multiple encapsulant material layers |
US9240530B2 (en) | 2012-02-13 | 2016-01-19 | Cree, Inc. | Light emitter devices having improved chemical and physical resistance and related methods |
DE102012202927B4 (de) * | 2012-02-27 | 2021-06-10 | Osram Gmbh | Lichtquelle mit led-chip und leuchtstoffschicht |
CN102709450A (zh) * | 2012-03-16 | 2012-10-03 | 上舜照明(中国)有限公司 | 一种可调光cob光源模组 |
US9488359B2 (en) | 2012-03-26 | 2016-11-08 | Cree, Inc. | Passive phase change radiators for LED lamps and fixtures |
JP2013203762A (ja) * | 2012-03-27 | 2013-10-07 | Shin-Etsu Chemical Co Ltd | 波長変換部品及びその製造方法並びに発光装置 |
KR20150004818A (ko) * | 2012-03-30 | 2015-01-13 | 코닌클리케 필립스 엔.브이. | 파장 변환 측면 코트를 갖는 발광 장치 |
US8680785B2 (en) | 2012-05-18 | 2014-03-25 | Xicato, Inc. | Variable master current mirror |
CN102709280A (zh) * | 2012-05-29 | 2012-10-03 | 宁波升谱光电半导体有限公司 | 一种cob集成光源模块 |
JP5894018B2 (ja) * | 2012-06-20 | 2016-03-23 | シャープ株式会社 | 蛍光体発光部、発光装置および蛍光体発光部の製造方法 |
US20140003044A1 (en) | 2012-09-06 | 2014-01-02 | Xicato, Inc. | Integrated led based illumination device |
TWM450831U (zh) * | 2012-11-23 | 2013-04-11 | Helio Optoelectronics Corp | 具有散熱單元之高亮度發光二極體燈具結構 |
US8845380B2 (en) | 2012-12-17 | 2014-09-30 | Xicato, Inc. | Automated color tuning of an LED based illumination device |
JP2014140015A (ja) * | 2012-12-19 | 2014-07-31 | Panasonic Corp | 発光モジュールおよびこれを用いた照明用光源 |
US9761763B2 (en) | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
US8870617B2 (en) | 2013-01-03 | 2014-10-28 | Xicato, Inc. | Color tuning of a multi-color LED based illumination device |
US10811576B2 (en) * | 2013-03-15 | 2020-10-20 | Quarkstar Llc | Color tuning of light-emitting devices |
US10400984B2 (en) | 2013-03-15 | 2019-09-03 | Cree, Inc. | LED light fixture and unitary optic member therefor |
US8770800B1 (en) | 2013-03-15 | 2014-07-08 | Xicato, Inc. | LED-based light source reflector with shell elements |
JP6134176B2 (ja) * | 2013-03-22 | 2017-05-24 | スタンレー電気株式会社 | 発光装置、および、その製造方法 |
JP2013145927A (ja) * | 2013-04-26 | 2013-07-25 | Toshiba Corp | 半導体発光装置 |
DE102013104351B4 (de) * | 2013-04-29 | 2022-01-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterschichtenfolge und Verfahren zum Betreiben eines optoelektronischen Halbleiterchips |
JP2015002182A (ja) * | 2013-06-13 | 2015-01-05 | 日立アプライアンス株式会社 | 照明装置 |
CN104241262B (zh) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
US9596737B2 (en) | 2013-07-02 | 2017-03-14 | Xicato, Inc. | Multi-port LED-based lighting communications gateway |
US9591726B2 (en) | 2013-07-02 | 2017-03-07 | Xicato, Inc. | LED-based lighting control network communication |
US9410664B2 (en) | 2013-08-29 | 2016-08-09 | Soraa, Inc. | Circadian friendly LED light source |
US10283681B2 (en) * | 2013-09-12 | 2019-05-07 | Cree, Inc. | Phosphor-converted light emitting device |
WO2015042193A2 (en) | 2013-09-17 | 2015-03-26 | Xicato, Inc. | Led based illumination device with integrated output window |
US9240528B2 (en) | 2013-10-03 | 2016-01-19 | Cree, Inc. | Solid state lighting apparatus with high scotopic/photopic (S/P) ratio |
JP2015076527A (ja) * | 2013-10-09 | 2015-04-20 | シチズン電子株式会社 | Led発光装置 |
KR101795740B1 (ko) * | 2013-11-08 | 2017-11-08 | 루미마이크로 주식회사 | 발광장치 |
JP6191453B2 (ja) * | 2013-12-27 | 2017-09-06 | 日亜化学工業株式会社 | 発光装置 |
US9425896B2 (en) | 2013-12-31 | 2016-08-23 | Xicato, Inc. | Color modulated LED-based illumination |
US9995458B2 (en) | 2014-01-13 | 2018-06-12 | Lg Innotek Co., Ltd. | Ceramic phosphor plate and lighting device including the same |
US9360188B2 (en) | 2014-02-20 | 2016-06-07 | Cree, Inc. | Remote phosphor element filled with transparent material and method for forming multisection optical elements |
US9788379B2 (en) | 2014-03-28 | 2017-10-10 | Xicato, Inc. | Deep dimming of an LED-based illumination device |
US9781799B2 (en) | 2014-05-05 | 2017-10-03 | Xicato, Inc. | LED-based illumination device reflector having sense and communication capability |
JP6349973B2 (ja) * | 2014-05-30 | 2018-07-04 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
US9192013B1 (en) | 2014-06-06 | 2015-11-17 | Cree, Inc. | Lighting devices with variable gamut |
US9534741B2 (en) | 2014-07-23 | 2017-01-03 | Cree, Inc. | Lighting devices with illumination regions having different gamut properties |
DE102014112883A1 (de) | 2014-09-08 | 2016-03-10 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
JP6657735B2 (ja) * | 2014-10-07 | 2020-03-04 | 日亜化学工業株式会社 | 発光装置 |
US10490711B2 (en) | 2014-10-07 | 2019-11-26 | Nichia Corporation | Light emitting device |
JP6354607B2 (ja) * | 2015-01-23 | 2018-07-11 | 日亜化学工業株式会社 | 発光装置 |
US9788397B2 (en) | 2015-02-27 | 2017-10-10 | Xicato, Inc. | Lighting communication advertising packets |
US9960848B2 (en) | 2015-02-27 | 2018-05-01 | Xicato, Inc. | Commissioning of devices on a lighting communications network |
US9853730B2 (en) | 2015-02-27 | 2017-12-26 | Xicato, Inc. | Lighting based authentication of a mobile electronic device |
US9930741B2 (en) | 2015-02-27 | 2018-03-27 | Xicato, Inc. | Synchronized light control over a wireless network |
WO2016164645A1 (en) | 2015-04-08 | 2016-10-13 | Xicato, Inc. | Led-based illumination systems having sense and communication capability |
US10009980B2 (en) | 2015-05-18 | 2018-06-26 | Xicato, Inc. | Lighting communications gateway |
US9943042B2 (en) | 2015-05-18 | 2018-04-17 | Biological Innovation & Optimization Systems, LLC | Grow light embodying power delivery and data communications features |
US9788387B2 (en) | 2015-09-15 | 2017-10-10 | Biological Innovation & Optimization Systems, LLC | Systems and methods for controlling the spectral content of LED lighting devices |
US9844116B2 (en) | 2015-09-15 | 2017-12-12 | Biological Innovation & Optimization Systems, LLC | Systems and methods for controlling the spectral content of LED lighting devices |
US9750092B2 (en) | 2015-10-01 | 2017-08-29 | Xicato, Inc. | Power management of an LED-based illumination device |
US9961731B2 (en) | 2015-12-08 | 2018-05-01 | Express Imaging Systems, Llc | Luminaire with transmissive filter and adjustable illumination pattern |
KR20170075897A (ko) | 2015-12-23 | 2017-07-04 | 삼성전자주식회사 | 발광 다이오드 패키지 |
WO2017131715A1 (en) * | 2016-01-28 | 2017-08-03 | Ecosense Lighting Inc. | Methods for generating melatonin-response-tuned white light with high color rendering |
WO2019139638A1 (en) | 2018-01-11 | 2019-07-18 | Ecosense Lighting Inc | Multi-channel systems for providing tunable light and functional diode emissions |
US10492264B2 (en) | 2016-01-28 | 2019-11-26 | EcoSense Lighting, Inc. | Lighting systems for providing tunable white light with functional diode emissions |
CN109315050B (zh) * | 2016-01-28 | 2020-05-29 | 生态照明公司 | 用于产生具有高显色性的可调白光的方法 |
CN105549262A (zh) * | 2016-02-03 | 2016-05-04 | 青岛海信电器股份有限公司 | 背光单元、背光光源组件及液晶显示设备 |
JP6800221B2 (ja) | 2016-05-13 | 2020-12-16 | ヌヴォトンテクノロジージャパン株式会社 | 光源装置及び照明装置 |
US10598318B1 (en) * | 2016-06-14 | 2020-03-24 | Eaton Intelligent Power Limited | Light source and method for making a light source |
US10544917B2 (en) | 2016-08-24 | 2020-01-28 | Express Imaging Systems, Llc | Shade and wavelength converter for solid state luminaires |
US10595376B2 (en) | 2016-09-13 | 2020-03-17 | Biological Innovation & Optimization Systems, LLC | Systems and methods for controlling the spectral content of LED lighting devices |
EP3534414B1 (en) * | 2016-10-25 | 2023-09-27 | Seoul Semiconductor Co., Ltd. | Display apparatus based on light-emitting diode packages |
KR20180090002A (ko) * | 2017-02-02 | 2018-08-10 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
KR101809098B1 (ko) * | 2017-08-14 | 2018-01-18 | 루미마이크로 주식회사 | 발광장치 |
DE102017119872A1 (de) * | 2017-08-30 | 2019-02-28 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
US10529900B2 (en) * | 2018-05-05 | 2020-01-07 | Ideal Industries Lighting Llc | Solid state lighting device providing spectral power distribution with enhanced perceived brightness |
US20190376652A1 (en) * | 2018-06-12 | 2019-12-12 | Alliance Sports Group, L.P. | Photo Luminescent Lighting Device |
US11417806B2 (en) * | 2018-07-30 | 2022-08-16 | Lumileds Llc | Dielectric mirror for broadband IR LEDs |
DK3915360T3 (da) * | 2019-01-24 | 2024-04-29 | Dainippon Printing Co Ltd | Led-belysningsenhed til dyre- og plantevækst, led-belysningsmodul til dyre- og plantevækst, hylde til et dyre- og plantevækstsstativ, dyre- og plantevækstsstativ, dyre- og plantevækstsfabrik |
US11145793B2 (en) | 2019-05-09 | 2021-10-12 | Lumileds Llc | Light emitting diode with high melanopic spectral content |
JP7462144B2 (ja) | 2019-10-30 | 2024-04-05 | 日亜化学工業株式会社 | 発光装置の製造方法及び発光装置 |
DE112019007826T5 (de) * | 2019-11-12 | 2022-06-30 | Lg Electronics Inc. | Anzeigevorrichtung mit flacher Beleuchtungseinrichtung |
TW202210605A (zh) * | 2020-09-14 | 2022-03-16 | 李崇華 | 白光發光二極體及包含其之背光模組與顯示裝置 |
US11949053B2 (en) | 2020-12-14 | 2024-04-02 | Lumileds Llc | Stencil printing flux for attaching light emitting diodes |
JP7283489B2 (ja) * | 2021-01-20 | 2023-05-30 | 三菱電機株式会社 | 発光装置 |
KR20230099023A (ko) * | 2021-12-27 | 2023-07-04 | 엘지디스플레이 주식회사 | 표시 장치 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW373156B (en) * | 1997-03-31 | 1999-11-01 | Idec Izumi Corp | Displayer and lighting device |
US20020030194A1 (en) * | 2000-09-12 | 2002-03-14 | Camras Michael D. | Light emitting diodes with improved light extraction efficiency |
US20020140891A1 (en) * | 2001-02-28 | 2002-10-03 | Yasushi Tomioka | Liquid crystal display |
US6501091B1 (en) * | 1998-04-01 | 2002-12-31 | Massachusetts Institute Of Technology | Quantum dot white and colored light emitting diodes |
US20030089919A1 (en) * | 2001-11-14 | 2003-05-15 | Citizen Electronics Co., Ltd. | Light emitting diode device |
TW569479B (en) * | 2002-12-20 | 2004-01-01 | Ind Tech Res Inst | White-light LED applying omnidirectional reflector |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE29724543U1 (de) * | 1996-06-26 | 2002-02-28 | OSRAM Opto Semiconductors GmbH & Co. oHG, 93049 Regensburg | Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
JPH10189242A (ja) * | 1996-12-20 | 1998-07-21 | Sanyo Electric Co Ltd | 波長変換型発光装置 |
US5895932A (en) * | 1997-01-24 | 1999-04-20 | International Business Machines Corporation | Hybrid organic-inorganic semiconductor light emitting diodes |
US6007209A (en) * | 1997-03-19 | 1999-12-28 | Teledyne Industries, Inc. | Light source for backlighting |
US5962971A (en) * | 1997-08-29 | 1999-10-05 | Chen; Hsing | LED structure with ultraviolet-light emission chip and multilayered resins to generate various colored lights |
US6340824B1 (en) * | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
JP3966954B2 (ja) * | 1997-09-01 | 2007-08-29 | 東芝電子エンジニアリング株式会社 | 照明装置、読み取り装置、投影装置、浄化装置、および表示装置 |
JP3486345B2 (ja) * | 1998-07-14 | 2004-01-13 | 東芝電子エンジニアリング株式会社 | 半導体発光装置 |
JP3645422B2 (ja) * | 1998-07-14 | 2005-05-11 | 東芝電子エンジニアリング株式会社 | 発光装置 |
JP2000133006A (ja) * | 1998-10-29 | 2000-05-12 | Sanyo Electric Co Ltd | 面光源 |
US6351069B1 (en) * | 1999-02-18 | 2002-02-26 | Lumileds Lighting, U.S., Llc | Red-deficiency-compensating phosphor LED |
US6565233B1 (en) * | 1999-08-17 | 2003-05-20 | Brian Edward Richardson | Color, size and distribution module for projected light |
US6696703B2 (en) * | 1999-09-27 | 2004-02-24 | Lumileds Lighting U.S., Llc | Thin film phosphor-converted light emitting diode device |
TW480744B (en) * | 2000-03-14 | 2002-03-21 | Lumileds Lighting Bv | Light-emitting diode, lighting device and method of manufacturing same |
US6797412B1 (en) * | 2000-04-11 | 2004-09-28 | University Of Connecticut | Full color display structures using pseudomorphic cladded quantum dot nanophosphor thin films |
US6501100B1 (en) * | 2000-05-15 | 2002-12-31 | General Electric Company | White light emitting phosphor blend for LED devices |
US6621211B1 (en) * | 2000-05-15 | 2003-09-16 | General Electric Company | White light emitting phosphor blends for LED devices |
JP2002042525A (ja) * | 2000-07-26 | 2002-02-08 | Toyoda Gosei Co Ltd | 面状光源 |
US6650044B1 (en) * | 2000-10-13 | 2003-11-18 | Lumileds Lighting U.S., Llc | Stenciling phosphor layers on light emitting diodes |
US20020084748A1 (en) * | 2000-12-28 | 2002-07-04 | Ayala Raul E. | UV Reflecting materials for LED lamps using UV-emitting diodes |
US6844903B2 (en) * | 2001-04-04 | 2005-01-18 | Lumileds Lighting U.S., Llc | Blue backlight and phosphor layer for a color LCD |
US6576488B2 (en) * | 2001-06-11 | 2003-06-10 | Lumileds Lighting U.S., Llc | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
DE10137042A1 (de) * | 2001-07-31 | 2003-02-20 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Planare Lichtquelle auf LED-Basis |
JP2003051622A (ja) * | 2001-08-07 | 2003-02-21 | Rohm Co Ltd | 白色系半導体発光装置 |
JP3707688B2 (ja) * | 2002-05-31 | 2005-10-19 | スタンレー電気株式会社 | 発光装置およびその製造方法 |
US6994453B2 (en) * | 2003-03-21 | 2006-02-07 | Blanchard Randall D | Illumination device having a dichroic mirror |
JP3871668B2 (ja) * | 2003-08-26 | 2007-01-24 | 東芝電子エンジニアリング株式会社 | 半導体発光装置 |
TW200512949A (en) * | 2003-09-17 | 2005-04-01 | Nanya Plastics Corp | A method to provide emission of white color light by the principle of secondary excitation and its product |
-
2004
- 2004-02-23 US US10/785,616 patent/US7250715B2/en not_active Expired - Lifetime
-
2005
- 2005-02-09 EP EP11171709A patent/EP2381303A3/en not_active Withdrawn
- 2005-02-09 EP EP05100888A patent/EP1566848B1/en active Active
- 2005-02-09 AT AT05100888T patent/ATE536638T1/de active
- 2005-02-18 TW TW094104926A patent/TWI394287B/zh active
- 2005-02-22 JP JP2005045325A patent/JP4969045B2/ja active Active
-
2011
- 2011-07-12 JP JP2011153916A patent/JP2011216905A/ja active Pending
- 2011-12-28 JP JP2011288824A patent/JP5575737B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW373156B (en) * | 1997-03-31 | 1999-11-01 | Idec Izumi Corp | Displayer and lighting device |
US6501091B1 (en) * | 1998-04-01 | 2002-12-31 | Massachusetts Institute Of Technology | Quantum dot white and colored light emitting diodes |
US20020030194A1 (en) * | 2000-09-12 | 2002-03-14 | Camras Michael D. | Light emitting diodes with improved light extraction efficiency |
US20020140891A1 (en) * | 2001-02-28 | 2002-10-03 | Yasushi Tomioka | Liquid crystal display |
US20030089919A1 (en) * | 2001-11-14 | 2003-05-15 | Citizen Electronics Co., Ltd. | Light emitting diode device |
TW569479B (en) * | 2002-12-20 | 2004-01-01 | Ind Tech Res Inst | White-light LED applying omnidirectional reflector |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107195752A (zh) * | 2017-05-26 | 2017-09-22 | 青岛海信电器股份有限公司 | 一种led、背光模组和显示装置 |
Also Published As
Publication number | Publication date |
---|---|
EP2381303A2 (en) | 2011-10-26 |
JP2005244226A (ja) | 2005-09-08 |
JP5575737B2 (ja) | 2014-08-20 |
US20050184638A1 (en) | 2005-08-25 |
EP2381303A3 (en) | 2012-02-08 |
EP1566848A2 (en) | 2005-08-24 |
TW200603434A (en) | 2006-01-16 |
EP1566848A3 (en) | 2010-04-07 |
ATE536638T1 (de) | 2011-12-15 |
EP1566848B1 (en) | 2011-12-07 |
JP4969045B2 (ja) | 2012-07-04 |
US7250715B2 (en) | 2007-07-31 |
JP2012064986A (ja) | 2012-03-29 |
JP2011216905A (ja) | 2011-10-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI394287B (zh) | 波長可變換之半導體發光元件 | |
TWI414075B (zh) | 磷光體轉換發光裝置 | |
JP5938213B2 (ja) | 波長変換半導体発光装置及びフィルタを含む光源 | |
US20080180948A1 (en) | White light emitting device and light source module for liquid crystal display backlight using the same | |
US9024335B2 (en) | Multi-package white LED device | |
EP1589090B1 (en) | Phosphor for phosphor-converted semiconductor light emitting device | |
US20140225145A1 (en) | Light emitting device and fabricating method thereof | |
KR100799859B1 (ko) | 백색 발광 소자 | |
US8421952B2 (en) | Illumination module for sectional illumination | |
US20180231191A1 (en) | Light source with tunable emission spectrum | |
US20220352416A1 (en) | High color gamut photoluminescence wavelength converted white light emitting devices | |
KR20160018636A (ko) | 표시 장치 | |
CN118448535A (zh) | Led光源、背光模组、显示装置及照明装置 | |
KR20160081091A (ko) | 형광체 혼합체 및 이를 포함하는 백색 발광소자 |