TWI388681B - 分割濺鍍靶及其製造方法 - Google Patents

分割濺鍍靶及其製造方法 Download PDF

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Publication number
TWI388681B
TWI388681B TW100126732A TW100126732A TWI388681B TW I388681 B TWI388681 B TW I388681B TW 100126732 A TW100126732 A TW 100126732A TW 100126732 A TW100126732 A TW 100126732A TW I388681 B TWI388681 B TW I388681B
Authority
TW
Taiwan
Prior art keywords
target
gap
low
support plate
oxide semiconductor
Prior art date
Application number
TW100126732A
Other languages
English (en)
Chinese (zh)
Other versions
TW201237199A (en
Inventor
Takashi Kubota
Original Assignee
Mitsui Mining & Smelting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co filed Critical Mitsui Mining & Smelting Co
Publication of TW201237199A publication Critical patent/TW201237199A/zh
Application granted granted Critical
Publication of TWI388681B publication Critical patent/TWI388681B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Ceramic Products (AREA)
  • Compositions Of Oxide Ceramics (AREA)
TW100126732A 2010-11-08 2011-07-28 分割濺鍍靶及其製造方法 TWI388681B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010249781 2010-11-08
PCT/JP2011/065952 WO2012063525A1 (ja) 2010-11-08 2011-07-13 分割スパッタリングターゲット及びその製造方法

Publications (2)

Publication Number Publication Date
TW201237199A TW201237199A (en) 2012-09-16
TWI388681B true TWI388681B (zh) 2013-03-11

Family

ID=46050684

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100126732A TWI388681B (zh) 2010-11-08 2011-07-28 分割濺鍍靶及其製造方法

Country Status (5)

Country Link
JP (1) JP4961515B1 (ja)
KR (1) KR101178822B1 (ja)
CN (1) CN102686767B (ja)
TW (1) TWI388681B (ja)
WO (1) WO2012063525A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5759425B2 (ja) * 2012-07-20 2015-08-05 株式会社神戸製鋼所 薄膜トランジスタの半導体層用薄膜の形成に用いられるターゲット組立体の品質評価方法
KR20140129770A (ko) 2013-04-30 2014-11-07 삼성디스플레이 주식회사 플라즈마 코팅 시스템용 타블렛, 이의 제조 방법, 및 이를 이용한 박막의 제조 방법
JP6273735B2 (ja) * 2013-09-20 2018-02-07 東ソー株式会社 円筒形スパッタリングターゲットとその製造方法
JP5937731B2 (ja) * 2014-10-07 2016-06-22 Ｊｘ金属株式会社 スパッタリングターゲット
CN105483625B (zh) * 2014-10-07 2018-01-02 Ｊｘ金属株式会社 溅射靶
CN105908137B (zh) * 2015-02-24 2020-12-15 Ｊｘ金属株式会社 溅射靶
JP6960989B2 (ja) * 2017-03-31 2021-11-05 三井金属鉱業株式会社 分割スパッタリングターゲット

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01230768A (ja) * 1988-03-08 1989-09-14 Asahi Glass Co Ltd スパッター用ターゲットユニットの製造方法および透明電導膜の製造方法
JPH08144052A (ja) * 1994-11-22 1996-06-04 Tosoh Corp Ｉｔｏスパッタリングターゲット
JP4427831B2 (ja) * 1998-06-08 2010-03-10 東ソー株式会社 スパッタリングターゲットおよびその製造方法

Also Published As

Publication number Publication date
TW201237199A (en) 2012-09-16
JP4961515B1 (ja) 2012-06-27
CN102686767A (zh) 2012-09-19
WO2012063525A1 (ja) 2012-05-18
CN102686767B (zh) 2014-05-28
KR101178822B1 (ko) 2012-09-03
KR20120087992A (ko) 2012-08-07
JPWO2012063525A1 (ja) 2014-05-12

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