TWI371759B - Flash memory device and method of operating the same - Google Patents

Flash memory device and method of operating the same

Info

Publication number
TWI371759B
TWI371759B TW096151388A TW96151388A TWI371759B TW I371759 B TWI371759 B TW I371759B TW 096151388 A TW096151388 A TW 096151388A TW 96151388 A TW96151388 A TW 96151388A TW I371759 B TWI371759 B TW I371759B
Authority
TW
Taiwan
Prior art keywords
operating
same
memory device
flash memory
flash
Prior art date
Application number
TW096151388A
Other languages
English (en)
Other versions
TW200839781A (en
Inventor
You Sung Kim
Duck Ju Kim
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200839781A publication Critical patent/TW200839781A/zh
Application granted granted Critical
Publication of TWI371759B publication Critical patent/TWI371759B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
TW096151388A 2007-01-23 2007-12-31 Flash memory device and method of operating the same TWI371759B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070007046A KR100885783B1 (ko) 2007-01-23 2007-01-23 플래시 메모리 장치 및 동작 방법

Publications (2)

Publication Number Publication Date
TW200839781A TW200839781A (en) 2008-10-01
TWI371759B true TWI371759B (en) 2012-09-01

Family

ID=39564109

Family Applications (2)

Application Number Title Priority Date Filing Date
TW100143096A TWI485716B (zh) 2007-01-23 2007-12-31 操作快閃記憶元件之方法
TW096151388A TWI371759B (en) 2007-01-23 2007-12-31 Flash memory device and method of operating the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW100143096A TWI485716B (zh) 2007-01-23 2007-12-31 操作快閃記憶元件之方法

Country Status (6)

Country Link
US (4) US7660160B2 (zh)
JP (1) JP2008181642A (zh)
KR (1) KR100885783B1 (zh)
CN (1) CN101231885B (zh)
DE (1) DE102008003055A1 (zh)
TW (2) TWI485716B (zh)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3935139B2 (ja) 2002-11-29 2007-06-20 株式会社東芝 半導体記憶装置
KR100885783B1 (ko) * 2007-01-23 2009-02-26 주식회사 하이닉스반도체 플래시 메모리 장치 및 동작 방법
US7545673B2 (en) * 2007-09-25 2009-06-09 Sandisk Il Ltd. Using MLC flash as SLC by writing dummy data
US7949821B2 (en) 2008-06-12 2011-05-24 Micron Technology, Inc. Method of storing data on a flash memory device
US7941592B2 (en) * 2008-08-14 2011-05-10 Bonella Randy M Method and apparatus for high reliability data storage and retrieval operations in multi-level flash cells
KR101005120B1 (ko) * 2009-02-04 2011-01-04 주식회사 하이닉스반도체 불휘발성 메모리 소자의 프로그램 방법
US8451662B2 (en) * 2011-03-03 2013-05-28 Micron Technology, Inc. Reading memory cell history during program operation for adaptive programming
JP2013089271A (ja) * 2011-10-18 2013-05-13 Toshiba Corp 半導体記憶装置
KR20130060749A (ko) * 2011-11-30 2013-06-10 에스케이하이닉스 주식회사 불휘발성 메모리 장치, 그것의 읽기 방법 및 그것을 포함하는 데이터 저장 장치
DE102013100596B4 (de) 2012-01-27 2023-09-07 Samsung Electronics Co. Ltd. Nichtflüchtiges Speichersystem mit Programmier- und Löschverfahren und Blockverwaltungsverfahren
KR101916192B1 (ko) 2012-04-19 2018-11-07 삼성전자주식회사 플래그 셀을 포함하는 불휘발성 메모리 장치 및 그것의 사용자 장치
KR20130136734A (ko) * 2012-06-05 2013-12-13 에스케이하이닉스 주식회사 불휘발성 메모리 장치
KR102005888B1 (ko) 2012-07-06 2019-07-31 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 읽기 방법
KR102025251B1 (ko) 2012-10-31 2019-09-25 삼성전자주식회사 메모리 시스템 및 그것의 프로그램 방법
CN103279402B (zh) * 2013-05-13 2016-08-10 记忆科技(深圳)有限公司 基于多层单元固态硬盘的数据恢复方法及固态硬盘
KR20140144989A (ko) * 2013-06-12 2014-12-22 에스케이하이닉스 주식회사 메모리 시스템, 반도체 메모리 장치 및 그것들의 동작 방법
KR102190399B1 (ko) 2013-10-11 2020-12-11 삼성전자주식회사 신뢰성을 보장할 수 있는 불휘발성 메모리 장치의 동작 방법 및 상기 방법을 수행하는 메모리 시스템
KR102065665B1 (ko) 2013-10-17 2020-01-13 삼성전자 주식회사 더미 워드라인을 포함하는 불휘발성 메모리 장치, 메모리 시스템 및 메모리 시스템의 동작방법
KR102117919B1 (ko) 2013-10-24 2020-06-02 삼성전자주식회사 저장 장치 및 그것의 프로그램 방법
US9690515B2 (en) 2013-10-25 2017-06-27 Sandisk Technologies Llc Delayed automation to maximize the utilization of read and write cache
KR102195298B1 (ko) 2014-02-13 2020-12-24 삼성전자주식회사 비휘발성 메모리 장치의 부분 페이지 프로그램 방법
KR102292183B1 (ko) 2014-11-07 2021-08-25 삼성전자주식회사 불휘발성 메모리의 동작 방법 및 불휘발성 메모리를 포함하는 스토리지 장치의 동작 방법
KR102211868B1 (ko) 2014-12-15 2021-02-04 삼성전자주식회사 스토리지 장치 및 스토리지 장치의 동작 방법
KR102512448B1 (ko) 2016-03-28 2023-03-22 에스케이하이닉스 주식회사 메모리 시스템 및 그의 동작 방법
US10032489B1 (en) * 2017-03-15 2018-07-24 Sandisk Technologies Llc Sensing amplifier to detect the memory cell current transition
US11100996B2 (en) 2017-08-30 2021-08-24 Micron Technology, Inc. Log data storage for flash memory
CN108536475B (zh) * 2017-12-27 2023-08-15 贵阳忆芯科技有限公司 完整编程命令处理方法与装置
KR20190100782A (ko) * 2018-02-21 2019-08-29 에스케이하이닉스 주식회사 스토리지 장치 및 그 동작 방법
US11238932B2 (en) 2019-09-20 2022-02-01 Samsung Electronics Co., Ltd. Method of operating nonvolatile memory device, nonvolatile memory device performing the same and method of operating memory system using the same
CN112687315B (zh) * 2021-01-04 2022-11-22 长江存储科技有限责任公司 三维存储器及其控制方法

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6781895B1 (en) 1991-12-19 2004-08-24 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
US5297029A (en) * 1991-12-19 1994-03-22 Kabushiki Kaisha Toshiba Semiconductor memory device
GB9205257D0 (en) * 1992-03-11 1992-04-22 British Nuclear Fuels Plc A lifting device
US6417844B1 (en) * 1996-06-25 2002-07-09 Seiko Epson Corporation Data processing apparatus and data processing method
JP3588529B2 (ja) * 1997-01-28 2004-11-10 株式会社東芝 半導体装置およびその応用システム装置
JPH11203191A (ja) * 1997-11-13 1999-07-30 Seiko Epson Corp 不揮発性記憶装置、不揮発性記憶装置の制御方法、および、不揮発性記憶装置を制御するプログラムを記録した情報記録媒体
FR2777672B1 (fr) * 1998-04-15 2000-05-19 Bull Sa Procede pour acceder indifferemment en mode d'adressage physique et en mode d'adressage virtuel a une meme zone memoire de machine de traitement numerique et machine mettant en oeuvre ce procede
KR100284696B1 (ko) * 1998-06-29 2001-03-15 윤종용 Mpeg 복호 블럭에서의 수평/수직 주파수 변환장치
JP2000298917A (ja) 1999-04-12 2000-10-24 Fujitsu Ltd 記憶装置
JP3524428B2 (ja) * 1999-04-20 2004-05-10 東京エレクトロンデバイス株式会社 記憶装置、記憶システム、メモリ管理方法及び記録媒体
US7628622B2 (en) * 1999-08-04 2009-12-08 Super Talent Electronics, Inc. Multi-level cell (MLC) slide flash memory
TW476066B (en) * 1999-11-09 2002-02-11 Winbond Electronics Corp OSD generation method and structure using dynamic random access memory
EP1192589B1 (en) 2000-03-21 2004-06-02 Koninklijke Philips Electronics N.V. Communication device for rapidly and simultaneously writing onto a plurality of data carriers, and data carrier for such a communication device
US7486790B1 (en) * 2000-06-30 2009-02-03 Verification Technologies, Inc. Method and apparatus for controlling access to storage media
CN1362708A (zh) * 2001-01-02 2002-08-07 吴秀林 一种闪存芯片的读写方法
US7865528B2 (en) * 2001-01-09 2011-01-04 Nextair Corporation Software, devices and methods facilitating execution of server-side applications at mobile devices
FR2827673B1 (fr) * 2001-07-18 2003-12-12 Somfy Procede de mesure de la lumiere exterieure pour la commande d'un moyen de protection solaire ou d'eclairage
US6799241B2 (en) * 2002-01-03 2004-09-28 Intel Corporation Method for dynamically adjusting a memory page closing policy
WO2003085677A1 (fr) * 2002-04-05 2003-10-16 Renesas Technology Corp. Memoire non volatile
JP4050555B2 (ja) 2002-05-29 2008-02-20 株式会社東芝 不揮発性半導体記憶装置およびそのデータ書き込み方法
US6961839B2 (en) * 2003-02-13 2005-11-01 Sun Microsystems, Inc. Generation of native code to enable page table access
GB0401579D0 (en) 2004-01-24 2004-02-25 Koninkl Philips Electronics Nv Transistor manufacture
JP4256307B2 (ja) * 2004-06-21 2009-04-22 株式会社東芝 メモリカード
US7421446B1 (en) * 2004-08-25 2008-09-02 Unisys Corporation Allocation of storage for a database
JP3942612B2 (ja) * 2004-09-10 2007-07-11 東京エレクトロンデバイス株式会社 記憶装置、メモリ管理方法及びプログラム
JP4192129B2 (ja) * 2004-09-13 2008-12-03 株式会社東芝 メモリ管理装置
KR100668828B1 (ko) 2004-09-13 2007-01-16 주식회사 하이닉스반도체 메모리 장치의 어드레스 버퍼 회로
JP4410188B2 (ja) * 2004-11-12 2010-02-03 株式会社東芝 半導体記憶装置のデータ書き込み方法
KR100672147B1 (ko) 2005-03-15 2007-01-19 주식회사 하이닉스반도체 불휘발성 메모리 장치의 체크 보드 프로그램 시에 프로그램페일을 방지하기 위한 페이지 버퍼
JP4768298B2 (ja) * 2005-03-28 2011-09-07 株式会社東芝 不揮発性半導体記憶装置
US7403433B2 (en) * 2005-12-30 2008-07-22 Stmicroelectronics Pvt. Ltd. Self timing write architecture for semiconductor memory and method for providing the same
KR100841336B1 (ko) * 2006-01-24 2008-06-26 삼성전자주식회사 고온 스트레스로 인한 읽기 마진의 감소를 보상할 수 있는플래시 메모리를 구비한 메모리 시스템
TW200805394A (en) * 2006-07-07 2008-01-16 Alcor Micro Corp Memory storage device and the read/write method thereof
US7561482B2 (en) * 2006-09-07 2009-07-14 Sandisk Corporation Defective block isolation in a non-volatile memory system
KR100885783B1 (ko) * 2007-01-23 2009-02-26 주식회사 하이닉스반도체 플래시 메모리 장치 및 동작 방법
JP2008251138A (ja) * 2007-03-30 2008-10-16 Toshiba Corp 不揮発性半導体メモリ、不揮発性半導体メモリの制御方法、不揮発性半導体メモリシステム、及びメモリカード
US7545673B2 (en) * 2007-09-25 2009-06-09 Sandisk Il Ltd. Using MLC flash as SLC by writing dummy data
JP2009104729A (ja) * 2007-10-24 2009-05-14 Toshiba Corp 不揮発性半導体記憶装置
KR101434401B1 (ko) * 2007-12-17 2014-08-27 삼성전자주식회사 집적 회로 메모리 장치
US7848144B2 (en) * 2008-06-16 2010-12-07 Sandisk Corporation Reverse order page writing in flash memories

Also Published As

Publication number Publication date
TW200839781A (en) 2008-10-01
CN101231885B (zh) 2011-08-17
US20100135077A1 (en) 2010-06-03
US7660160B2 (en) 2010-02-09
TWI485716B (zh) 2015-05-21
TW201216293A (en) 2012-04-16
DE102008003055A1 (de) 2008-07-31
US8199583B2 (en) 2012-06-12
CN101231885A (zh) 2008-07-30
US20100142282A1 (en) 2010-06-10
US20080175059A1 (en) 2008-07-24
US8068368B2 (en) 2011-11-29
US8107291B2 (en) 2012-01-31
KR100885783B1 (ko) 2009-02-26
US20100135076A1 (en) 2010-06-03
KR20080069389A (ko) 2008-07-28
JP2008181642A (ja) 2008-08-07

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