TWI362708B - A manufacturing method of semiconductor device - Google Patents

A manufacturing method of semiconductor device Download PDF

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Publication number
TWI362708B
TWI362708B TW095105603A TW95105603A TWI362708B TW I362708 B TWI362708 B TW I362708B TW 095105603 A TW095105603 A TW 095105603A TW 95105603 A TW95105603 A TW 95105603A TW I362708 B TWI362708 B TW I362708B
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Taiwan
Prior art keywords
resin
semiconductor device
adhesive film
semiconductor
film
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Application number
TW095105603A
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English (en)
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TW200633086A (en
Inventor
Sadahito Misumi
Takeshi Matsumura
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Nitto Denko Corp
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Publication of TW200633086A publication Critical patent/TW200633086A/zh
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Publication of TWI362708B publication Critical patent/TWI362708B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J161/00—Adhesives based on condensation polymers of aldehydes or ketones; Adhesives based on derivatives of such polymers
    • C09J161/04—Condensation polymers of aldehydes or ketones with phenols only
    • C09J161/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
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19387pifll 修正曰期物年12月19日 爲第95105603號中文說明書無劃線修正本 九、發明說明： 【發明所屬之技術領域】 本發明是關於半導體裝置的製造方法、此方法中所使 用的黏合膠片（bonding sheet)及利用此方法所得到的 體裝置。 ^ 【先前技術】 為了應對半導體裝置精細化、高功能化的要长，在 導體晶片（ChiP)(半導體元件）主板上所配置的電源線間的 配線寬度及信號線間的間隔在不斷變窄，因而產生阻广 (impedance)增加及不同節點(node)的信號線之間信號干= 的現象。在半導體晶片運作速度、運作電壓餘裕度、°耐= 電破壞強度等的條件下，上述絲成脉雛能充分發揮 的主要原因。為解決此等問題，例如下述專利文獻1和2 揭示了將半導體元件積層的封裝(package)結構。 另一方面，在將半導體元件固定於基板時，可使用例 如熱固性黏接樹脂（參照例如下述專利文獻3)或並用熱 塑性樹脂及熱固性樹脂的黏合則（參照例如下述專利= 獻4和5 )。 裝置的製造方法中，在進行半導體元件 與基板、導線架(lead frame)或半導體元件黏接時使用黏人 膠^黏合劑。接著，按壓半導體元件與基板等後（晶^ 黏者che attach)、藉由加熱黏合膠片等製程進行固化 外，此製造方法中，為使半導體元件與基板電接觸而進行 焊線(wire bonding)，其後灌注封裝樹脂、後固化如 1362708 19387pifli 修正日期:100年12月19曰 爲第95105603號中文說明書無gf線修正本 curing)，藉甴此封裝樹脂進行封裝。 然而，進行焊線時基板等上的半導體元件會因超音波 振動或加熱而移動。因此，先前必須在焊線之前進行加熱 襄程以加熱固化熱固性黏接樹脂或熱固性黏合謬片才能使 半導體元件被固定不動。 進一步，關於熱塑性樹脂構成的黏合膠片或併用埶固 性樹脂與_賴㈣黏合膠片，為提昇其無接物件之 間的黏接力及相容性，在點晶片後、焊必 熱製程。 然而，若在焊線之前加熱黏合膠片等，則從黏合膠片 等產生揮發性氣體。轉雜氣體會污染焊線塾(wire g Pad) *產生大多數情況下不能進行焊、線的問題。 ㈣此1卜:此#合膠片因加熱固化黏合膠片而發生固化收 伴’存在著在黏合膠片中產生應力、導線架 還有半導體元件）發生麵曲的問題。此外， ί有t製程中因應力引起半導體元件破裂的問題。近年 件的半導體元件的薄型化、小型化，半導體元 牛的厚度從先則的200μπ1減少到200μιη以下進一步到 。。舌μιη二下’基板等她曲或半導體元件的破裂問題更顯 嚴重’解決此問題便更顯重要。 ㈣喊更4 專利文獻2 專利文獻3 專利文獻4 專利文獻1 :日本制昭55—111151號公報。 曰本特開2002 — 261233號公報。 曰本特開2002-179769號公報。 曰本特開2000— 104040號公報。 7 丄观708 19387pifll 修正日期:1〇〇年12月19曰 爲第9510测號巾文酬_輸修正本 【發明内容】 』止針對上關題，本申請之發明提供—種半導體裝置的 穿 法此方法可防止因焊墊(bonding pad)污染所引起 的不ί焊線的情況，並且防止基板、導線钱半導體元件 ?黏著物/adherend)發生翹曲’提昇效率、簡化製造製 程’本申请之發明還提供此方法中所使用的黏合膠片及利 用此方法所得到的半導體裝置。 本__發财們為解決上述先前問題 ，專心研究半 -裝置的製作方法、此方法中所使用的黏合膠片及利用 此方去所制的半導H裝置。結果發現藉由採訂述措施 可達到上述目的，從而完成本發明。 亦即，為解決上述課題，本發明之半導體裝置的製造 方法包括將半導n元件藉峰合膠#暫時固定於黏著物上 的暫時固定製程及不經過加熱製程、在接合溫度 80C〜25GC®_進行焊線的焊線製程，其中使用固化前 ，存彈性模數(st〇rage eiastic m〇duhjs)在8〇。匚〜25〇。〇溫度 辜:圍内為IMPa或IMPa以上、或在此溫度範圍内的任一 溫度為/MPa或iMPa以上的黏合膠片作為上述黏合膠片。 。若為上述方法，則由於使用固化前儲存彈性模數在 80^〜250°C溫度範圍内為1MPa或1MPa以上、或在此溫 度範圍内的任一溫度為1MPa或1MPa以上的黏合膠片， 省略^黏合膠片的加熱製程，即使在半導體元件暫時固定 ;黏著物上的狀態轉至焊線製程，也不會在此製程中因超 19387pifll 爲第95丨056〇3號中文明書無 修正日期:1〇〇年12月19日 ^皮振^加熱雜合則絲著物的 變形。在進行焊線製程時，可以提高焊線成功率月動 此外，先如的製造方法中在焊線赞 二 二從Ϊ合膠片中產生揮發性氣體而污染焊墊 :氣體:污染焊塾。繼而，由於省略了加熱黏= 衣私，不會發生基板的翹曲或半導體元件的破裂。其結果 有可能實現半導體元件的進一步薄型化。 上述黏著物是基板、導線架或半導體元件為佳。 進步包括由封裝樹脂封裝上述半導體元件的封裝 製程及進行上述封裝樹脂的後固化之後固化製程，上述^ 裝製程及/或後g]化製程中，在#由加熱固化封裝樹脂的同 時，藉由上述黏合膠片將半導體元件與黏著物固定為佳。 藉此，有可能同時進行藉由黏合膠片的半導體元件與黏著 物的固定及封裝樹脂的固化，實現製程的簡化。 此外，使用含有熱塑性樹脂的黏合膠片作為上述黏合 膠片為佳。 ° 此外，使用含有熱固性樹脂與熱塑性樹脂雙方的黏合 膠片作為上述黏合膠片為佳。 此外，使用丙烯酸樹脂作為上述熱塑性樹脂為佳。此 外，使用環氡樹脂及/或盼樹脂(phenol resin)作為上述熱固 化樹脂為佳。由於此等樹脂中離子性雜質少、耐熱性高， 可確保半導體元件的可靠性。 此外，為解決上述課題，與本發明相關的黏合膠片是 1362708 19387pifll 修正日期:100年12月19曰 爲第95105603號中說明書無劃線修正本 製造半，體裝置所使用的黏合膠片，其特徵在於固化前儲 存彈性模數在8G°C〜25Gt溫度範®内為lMPa 或1 MPa以 上'或在此溫度範圍内的任一溫度為IMPa或IMPa以上》 上述黏合膠片含有熱塑性樹脂為佳。 此外，上述黏合膠片含有熱固性樹脂與熱塑性樹脂雙 方為佳。 進步上述熱塑性樹脂是丙烯酸樹脂為佳。 此外，上述熱固性樹脂是環氧樹脂及/或酚樹脂為佳。 上述黏合膠片中添加交聯劑為佳。 導：=:的本發明之半導體裝置是利用上述半 本發明藉由上述方法實顧下描述的效果。 80。。Π。二：於本發明使用固化前的儲存彈性模數在 溫度範圍内或此溫度範圍内的任—溫度下為 教=丨贿以上_合膠片，即使省略了黏合膠片的加 接j 焊線製程，也可防止在黏合膠片與黏著物的 體。因此，谢么:揮發性氣 導體裝置生產率的同時，提高了生產量。 牛 並且’在上述半導體元件 以=導r件二，==層半 的情形下，、====層積間隔物 作用政果。此外，上述製程的
I9387pifll 一 951G56G3號φ文說鴨輪j線修正本 修正日期:100年12月19日 簡化有望在3維組裝多個半導體元件等時實現製造效率的 進一步提高。 【實施方式】 (實施方式1) 參照圖1(a)〜圖1(c)對本發明的實施方式進行說明。 圖1(a)〜圖1(c)是為了說明本實施方式的半導體裝置的製 法的製程圖。但是，圖示部分省略了對於說明不必要 的部分’或為了易於說明被放大或縮小。以上諸點也適用 於以下圖式。 本實施方式的半導體裝置製造方法包括將半導體元 件1^以黏合膠片12暫時固定於基板或導線架（黏著物， 以下簡稱為基板等）u上的暫時固定製程及不經加熱製程 進，焊線的焊線製程。進一步，包括將半導體元件13以封 裝樹脂15封裝的封裝製程及後固化此封裝樹脂15的後固 化製程。 ^上述暫時固定製程是如圖l(a)所示，將半導體元件13 藉由黏合膠片12固定於基板等U上的暫時固定製程。將 半導體元件13暫時固定於基板等u上的方法，可列舉例 如在基板等11上層積黏合膠片12後、在黏合膠片12之上 將半導體元件13的焊線面朝上依次層積暫時固定的方 法。此外，亦可將預先暫時固定有黏合膠片12的半導體元 件13暫時固定且層積於基板等η之上。 可使用習知的基板作為上述基板。此外，可使用cu 導線架、42 Alloy(鐵鎳合金的一種，泛指鎳含量約為42〇/〇 11 1362708 19387ρίΠ1 修正日期:100年12月19曰 爲第95105603號中文說明書無劃線修正本 的合金)導線架等金屬導線架或玻璃環氧樹脂、Βτ(三氣雜 苯雙馬來醯胺樹脂’ bismaleimide-triazine)、聚酿亞胺 (polyimide)等構成的有機基板作為上述導線架。但是，本 發明並不受此限制’也包括裝配(mount)有半導體元件、可 電氣連接半導體元件而使用的電路基板。 上述黏合膠片12使用的是固化前儲存彈性模數在 80°C〜250°C溫度範圍内為IMPa或lMPa以上、或在此溫 度範圍内的任一溫度為IMPa或IMPa以上、較好= 1〜lOOMPa範圍内的黏合膠片。黏合膠片12的儲存彈性模 數若在IMPa或IMPa以上，則即使不經過加熱製程而進 行焊線製程，也不會在此製程中因超音波振動或加熱而在 黏合膠片12與半導體元件13或基板等11的接觸面上發生 滑動變形。亦即，焊線時半導體元件不因超音波振動而移 動’藉此防止焊線成功率的降低，有望提昇工作效率。此 外，關於黏合膠片12 ’以下段落中有將更詳細的描述。 上述焊線製程是以焊線16實現基板等11的端子部 (内部引線）的末端與半導體元件13上的電極銲墊（圖中 未表示）之間電接觸的製程（參照圖1(b))。本製程無需進 行藉由黏合膠片12的固定。此外，本製程的過程中無需將 半導體元件13藉由黏合膠片12固定於基板等丨丨上。上述 焊線16可使用例如金線、鋁線或銅線等。進行焊線時，其 接合溫度需要在80。〇250。(：，較好在80〇C〜220°C範圍内。 小於80°C，則所接線的強度減弱《另一方面，若超過 250°C ’則基板發生翹曲、不能穩定進行焊線操作。此外， 12 1362708 19387pifll 修正曰期:1〇〇年12月19曰 爲第951(15603號中織鴨無讎修正本 其加熱時間為數秒〜數分鐘。 知線疋在加熱至上述溫度範圍内的狀態下、藉由超音 波的振動能與施加壓力的按壓能之併用而進行。此類方法 可列舉例如超音波方式或超音波熱壓方式。此外，因敎壓 —般在接合溫度為通〜3机下進行，對於本發明 上述封裝製程是利用封裝樹脂15封裝半導體元件13 的製程（參照圖1⑷）。本製程是為了保護基板等u上 搭載的半導體元件13或焊線16。本製程為利用模呈進行 封裝用樹脂的成形。使用例如環氧樹脂作為封裝樹脂Μ。 樹脂封裝時通常在加熱溫度為175t：時進行6G〜9〇秒，但 本發明並不受此關，例如可以在165〜185t時進: 鐘的固化(cure)。藉此，在固化封裝樹脂的同時， = 件13與基板等U藉由黏合膠片12固定在一起。亦即: 發明即使不進行下述的後固化製程，也有可能在本製程中 == 固定，從而有望減少製程數目及縮短半 上述後ϋ化製雜得上述封裝製財未固化的 =15完全固化。在封裝製程中未藉由黏合膠片i2 t 疋時’也可在本製程中在固化封裝樹脂15的同時藉由黏人 ^片12而;11定。本伽巾的加熱溫度隨封賴脂的種類: 異，例如在165〜赋範圍内，加熱時間為0.5〜8小時左 右0 以下詳細描述上述黏合㈣12。若黏合刺12的儲 13 1362708 19387pifll 爲第951G56G3號中文說明書無麵修正本 修正日期:1G0年12月19日 存彈性模數在8(Tc〜250°C的溫度範圍内為IMPa或IMPa 以上’或在此溫度範圍内的任一溫度為lMPa或iMPa以 上’則其構成不受特定的限制。本實施方式中，為使得儲 存彈性模數在上述數值範圍内，亦可從例如下述的材料群 中適當選擇必要的材料在一定條件下製作黏合膠片12。此 外’可藉由增加熱塑性樹脂量而降低黏合膠片12的儲存彈 性模數’另一方面也可藉由增加熱固性樹脂量而增大黏合 膠片12的儲存彈性模數。 可列舉例如僅由單層黏合劑構成的黏合膠片或在核 (core)材料的單面或雙面上形成黏合劑層的多層構造的黏 合膠片等。上述核材料，可列舉薄臈（例如聚醯亞胺薄膜、 聚酯薄膜、聚對苯二曱酸乙二酯薄膜、聚萘乙酯薄膜 (polyethylenenaphthalate film)、聚碳酸酯薄膜等）、以玻璃 纖維或塑膠製不織纖賴化的樹脂基板、石夕基板或玻璃基 板等。此外’可以使用與黏合膠片晶粒黏著成一體的材料。 ,上述黏合劑層是具有黏接功能的層，其構成材料可列 舉併用熱塑性樹脂與熱固性樹脂。再者，亦可單獨使用埶 塑性樹脂。 ‘”' 作為上述熱塑性樹脂，可列舉天然橡膠、丁基橡膠、 異，一烯橡膠、氯丁二稀橡膠、乙烯—醋酸乙稀§旨共聚物、 乙稀-丙烯酸共聚物、乙稀—丙稀酸g旨共聚物、聚丁二婦 樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6一尼龍或 6,6-尼龍等聚醯胺樹脂 '苯氧基樹脂、丙烯酸樹脂、 或PBT等飽和聚_脂、魏胺酿亞胺或含氟樹脂等。此 1362708 19387pifll 爲第嶋6〇3嫩說明書無劃線修正本 修正曰期年叫β日 等熱塑性樹脂可單獨使用或2種以上合並❹。此等熱塑 性樹脂中，待別較佳的是，離子性雜質少、耐熱性高可 確保半導體元件可靠性的丙烯酸樹脂。 … ^ 上述丙烯酸系樹脂沒有特別限定’可列舉1種或2種 以上、碳原子數30以下、特別是含有碳原子數4〜18的直 鏈或支鏈烷基的丙烯酸或曱基丙烯酸的酯作為成分的聚合 物。上述烷基，可列舉例如曱基、乙基、丙基、異丙基: 正丁基、叔丁基、異丁基、戊基、異戊基、己基、庚基、 環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸 基、異癸基、十一烷基、十二烷基、十三烷基、十四烷基、 十八烷基、或二十烷基等。 此外，形成上述^^合物的其他單體，沒有特別限定， 可列舉例如丙烯酸、甲基丙烯酸、羧乙基丙烯酸酯 (carboxyethyl acrylate)、羧基笨基酸酯（carb〇xyphenyl acrylate)、分解鳥頭酸、順丁烯二酸、反丁烯二酸或丁烯 酸等的含有羧基的單體；無水順丁烯二酸或無水分解鳥頭 酸等酸酐單體；（曱基）丙烯酸_2_經基乙酯、（甲基）丙婦 酸-2-羥基丙酯、（甲基）丙烯酸羥基丁酯、（甲基）丙烯 酸-6-羥基己酯、（甲基）丙烯酸羥基辛酯、（甲基）丙烯 酸-10-羥基癸酯、（甲基）丙烯酸羥基十二烷基酯或曱 基丙烯酸-4-羥曱基環己基等含有羥基的單體；苯乙烯磺酸 (styrenesulfonic acid)、芳香基磺酸、2-(甲基）丙烯醯胺 -2-甲基丙續酸、（甲基）丙烯酿胺基丙績酸、（甲基）丙媒 酸磺丙酯（sulfopropyl (methyl) acrylate)、或（曱基）烯丙 15 1362708 19387pifll 爲第95105603號中文說明書無劃線修正本修正日期:l〇〇年12月19日 酿氧萘續酸(acryloyloxy naphthalenesulfonic acid)等含有石夤 酸基的單體；或烯丙醯基磷酸2-羥基乙酯(2-hydroxyethyl acryloylphosphate)等含有磷酸基的單體。 上述熱固性樹脂’可列舉酚樹脂、氨基樹脂、不飽和 聚酯樹脂、環氧樹脂、聚氨基甲基乙酯樹脂、矽氧基樹脂 或熱固性聚醯亞胺樹脂等。此等樹脂可單獨使用或2種以 上合並使用。此等熱塑性樹脂令，特佳的是含有對半導體 元件腐姓的離子性雜質量較少的環氧樹脂。此外，以酚樹 脂作為環氧樹脂的固化劑為佳。 上述環氧樹脂若是普遍使用的黏合劑組合物，則沒有 特別限定，可使用例如雙酚A型、雙酚f型、雙酚s型、 溴化雙酚A型、氫化雙酚a型、雙酚af型、聯苯型、奈 型、芴(fhiorene)型、苯酚醛型、苯甲酚醛型、三羥基苯^ 甲院（trihydroxyphenylmethane)型、四苯乙燒 (Jteaphenylolethane)型等二官能團環氧樹脂或多官能團^ 軋樹脂；或乙内醯脲(hydantoin)型、異氰尿酸三環氧酯 (tns-glycidyl isocyanurate)型或環氧丙醇美胺 (giyCidylamine)等環氧樹脂。此等可單獨使用或2種以土上並 = 氧樹脂中麵峨樹脂、二苯型環氧樹脂、 院型樹脂、四苯乙烧型環氧樹脂等特佳。因 與作為固化劑的轉脂的反應性豐富、耐 甲酚 16 1362708 19387pifll 爲第95105603號中文說明書無劃線修正本 修正日期:100年12月19曰 祕樹脂、叔τ絲騎_脂、壬絲__脂等龄 醛清漆_〇㈣型酚樹脂、可溶性祕(res〇le)型齡樹脂； 聚對殘基苯乙烯等妓絲乙烯等。此等樹脂可單獨或2 種以上合做肖。此等轉財苯騎_脂、苯齡芳烧 基樹脂特=g為可以提昇半導體裝置的黏接可靠性。 上述環氧樹脂與酚樹脂的配比，例如以丨當量上述環 氧樹脂成分t的環氧基配合〇.5~2 #量_樹^旨中的 為佳、較佳為0.8〜1.2當量。若二者的配比超出上述範圍1 則固化反應不能進行充分，環氧樹翻化物的特性容易劣 化。 此外，對於本發明，特別較佳的事，含有環氧樹脂、 酚樹脂及丙烯酸樹脂的黏合膠片。此等樹脂中離子性雜質 少、财熱性S，故可確保半導體元件的可#性。此時的二 比為相對於100重量部丙烯酸樹脂成分，環氧樹脂與酚 脂的混合量為10〜200重量部。 為了在本發明的黏合膠片12中預置一定程度的橋聯 基團，製作時添加可與聚合物分子鏈末端官能基反應的^ 官能性化合物作為交聯劑為佳。藉此，可以提昇高溫下二 黏接特性、有望改善耐熱性。 可採用先前習知的交聯劑作為上述交聯劑。特別是甲 苯二異氰酸酯(tolylene diisocyanate)、二苯曱烷二異氣酸妒 (diphenylmethanediisocyanate)、對苯二異氰酸酽 (p-phenylene diisocyanate) 、萘二異說酸酉t (l，5-naphthalene diisocyanate)、多元醇與二異氰酸酯的衍生 17 19387pifll 修正日期:100年12月19日 爲第95105603號中文說明書無劃線修正；^ 物等聚異賊自旨化合物錄^相對於丨⑻重量 成分，交聯劑的添加量通常為〇.〇5〜7重量部為佳。若= 劑的量超過7重量部，則因黏接力降低，不宜。另一方面， f不足0.05重量部，則内聚力不足，不宜。此外，也可因 應必要在此等聚異說酸化合物之外 等其他多官能性化合物。 月曰 *此外’可以對應其用途在本發明之黏合膠片12 =城機填充劑。無機填充劑的加人有可能賦予導電性 ^南熱料性、㈣雜難(dastiemGd =填充材料，可列舉氧切、黏土、石膏、碳= m化銘、炭切、氮化石夕等陶究類;紹、銅、銀、 龆錦、絡、錯、錫、辞、把、焊料等金 :其他由碳組柄各種無機粉末。^^獨㈣^ 以上合併使用。其巾適宜使魏切，特別歧融氧 矽。此外，無機填充劑的平均 為佳。 ㈣十吟粒么在0.1〜80μιη的範圍内 相對於100重量部有機樹脂成分， 配比設為0〜80重量部為佳，較佳設為〇〜70重^充劑的
令可機填充劑之外，本發明的黏合膠片U 為：阻他添加劑。其他添㈣可列舉 “，、削矽烷偶如劑或離子捕獲劑等。 可列舉三氧化銻、五氧化録、 述_劑。此等可單獨使用也^化每氧樹脂等作為上 上述石夕•产健制 了 2種以上合併使用。 夕坑偶聯劑，可列舉例如阳，4·環氧環己基)乙基 19387pifll 修正日期:1〇〇年12月19日 爲第95105603號中文說明書無劃線修正本 三曱基石夕院（冷-(3，4-epoxy cyclohexyl) ethyltrimethoxy)、γ-縮水甘油醚氧丙基三甲氧基矽烷 (γ-glycidoxypropyltrimethoxysilane)、γ-環氧丙基曱基二乙 氧基石夕烧(γ-glycidoxypropylmethyldiethoxysilane)等。此等 化合物可單獨使用或2種以上合併使用。 上述離子捕獲劑，可列舉例如水滑石、氫氧化鉍等。 此等可單獨使用也可2種以上合併使用。 (實施方式2) 參照圖2⑷〜圖2(e)說明本發明的實施方式2之半導 體裝置的製造方法。圖2(a)〜圖2(e)是說明本實施方式之 半導體裝置製造方法的製程圖。 本實施方式之半導體裝置，與上述實施方式1之半導 體裝置相比，不同點在於層積多個半導體元件進行3維裝 配。更詳細地說，不同點在於包括：在半導體元件上藉由 上述黏合膠片層積其他半導體元件的製程。 首先，如圖2(a)所示，至少一個或一個以上被切成預 定大小的黏合膠片12被暫時固定於黏著物基板等u之 上。其後，將半導體元件13以焊接面朝上暫時固定在黏合 勝片12之上（參照圖2(b))。進而，在半導體元件13之上 避開電極銲垫(electrode pad)部分暫時固定黏合膠片14(參 知圖2(c))。進而，在黏合膠片14之上使焊接面朝上形成 半導體元件13 (參照圖2(d))。 ^其後，不進行加熱製程，如圖2(e)所示進行焊線製程。 藉此，以焊線16實現半導體元件13上的電極銲墊與基板 1362708 19387pifll 爲第95105603號中文說明書無劃線修正本 修正日期:⑽年12月19日 等11之間的電氣連接。 接著，進行藉由封裝樹脂封裝半導體元件13的封裝 製程，在固化封裝樹脂的同時，基板等n與半導體元件 13之間、及半導體元件13與半導體元件13之間藉由黏合 膠片12、14被固定。此外，也可在封裝製程之後進行後固 化製程。 本實施方式在3維裝配半導體元件的情形下，也可不 進行加熱黏合膠片12、14的加熱處理，有望簡化製造製程 及提高效率。此外’不發生基板等11的翹曲或半導體元件 13的破裂’因而半導體元件有可能進一步薄型化。 (實施方式3) 參照圖3(a)〜圖3(g)對本發明的實施方式3之半導體 裝置的製造方法進行說明。圖3(a)〜圖3(g)是說明本實施 方式之半導體裝置製造方法的製程圖。 本實施方式的半導體裝置，與上述實施方式2的半導 體裝置相比較’不同點在於層積的半導體元件之間存在間 隔物。更為詳細地說’不同點在於包括在半導體元件與半 導體元件之間藉由黏合膠片層積間隔物的製程。 首先，如圖3(a)〜圖3(c)所示，與上述實施方式2相同， 在基板等11之上依次層積並暫時固定黏合膠片12、半導 體元件13及黏合膠片14。接著，在黏合膠片14之上依次 層積並暫時固定間隔物21、黏合膠片W及半導體元件13 (參照圖3(d)〜圖3(f))。 接著，如圖3(g)所示’不進行加熱製程而進行焊線製 20 1362708 19387pifll 修正日期:100年12月19曰 爲第95105603號中文說明書無劃線修正本 程藉此以焊線16實現半導體元件13上的電極鋅塾與 基板等11之間電氣連接。 接下來，進行藉由封裝樹脂封裝半導體元件13的封 裝製程，在HHb縣樹脂的啊，基㈣u與半導體元件 13之間、半導體元件13與間隔物12之間藉由黏合膠片 12、^㈣定。此外’也可在難製程之後進行後固化製 程。藉由進彳了以上製造餘，可制本實施方式的半導體 裝置。 此外，上述間隔物沒有特別限定，可使用例如先前習 知的石夕晶片、聚醢亞胺薄膜等。 (實施方式4) 參,、、、圖4(a)〜圖4(e)對本發明的實施方式4之半導體 裝置的製造方法說明。4(a)〜圖4(e)是說明本實施方式 之半導體裝置製造方法的製程圖。 首先，如目4(a)所示，將黏合膠# 12,貼在半導體晶 圓13’的内面’製作帶有點合膠片的半導體晶圓。接著， 半導體晶圓13’暫時固定於切割膠帶(didngtape)33i (參 照圖4(b))。進而’將帶有黏合膠片的半導體晶圓切割成預 定的大小、成晶片狀，從切割膠帶33上剝離帶有粘接劑的 晶片。 接著，如圖4(d)所示，將帶有黏合膠片12的半導 元件13以焊接面朝上暫時固定於基板等丨丨之上。進一步， 將帶有黏合膠片31的大小不同的半導體元件32以焊 朝上暫時固定於半導體元件13之上。 19387pifli 修正曰期:100年12月19日 爲第95105603號中文說明書無劃線修正本 r 如圖4(e)所不’不進行加熱製程而進行焊線製 权。藉此，以焊線16 f現半導體 墊與基板等U之間的電氣連接。⑼32上的電贿 ㈣^下^ ’進行藉由封裝樹脂封裝半導體元件13的封 封裝樹脂的同時’基板等11與半導體元件 片12曰31、—體70件13與半導體元件32之間藉由黏合膠 =12、3U皮固疋。此外，也可在封裳製程之後進行後固化 =置糟由進行以上製造製程’可得到本實施枝的半導 (實施方式5) 參照圖5(a)〜圖5(e)對本發明的實施方式$之半導體 裝置的製造方法進行說明。_ 5⑷〜圖⑽是說明本實施 方式之半導體裝置製造方法的製輕圖。 本實施方式的半導體裝置，與上述實施方式4的半導 體裝置相比較’不同點在於在切割膠帶33 片12,後'進-步在黏合膠片12，之上層積半導體s:二 首先’如圖5⑷所示，在切割膠帶33上層積黏合膠片 12，。接著，在黏合膠片12,上層積半導體晶圓13,（參昭 圖5(b))。進一步，將帶有黏合膠片的半導體晶圓切割&amp;預 定的大小、成晶片狀（參照圖5(c))，從切割膠帶33上剝 離帶有粘接劑的晶片。 ’ 接著’如圖5(d)所示，將帶有黏合膠片12的半導體 元件13以焊接面朝上暫時固定於基板等u之上。進而， 將帶有黏合膠片31的大小不同的半導體元件32以焊接面 22 1362708 19387pifll 修正日期:100年12月19日 爲第95105603號中文說明書無劃線修正本 朝上暫時固定於半導體元件13之上。此時，避開下層半導 體元件^的電極銲墊部分而進行半導體元件32的固定。 ，著，如圖5(e)所示，不進行加熱製程而進行焊線製 程。藉此，以谭線16實現半導體元件13、32上的電極鲜 塾與基板等11上的㈣連制狀_電氣連接。 接下來，進行藉由封裝樹脂封裝半導體元件13、32 的封裝製程’在固化封裝樹脂的同時，基 ，之間、半導體元件丨3與半導趙元丄間= 二膠片12、31被固定。此外，也可在封裝製程 =置藉由進行以上製造製程，可得到本實施方式的 (實施方式6) &gt;圖6(a)〜圖6(c)及圖7對本發明的實施方式6之 =體裝置的製造方法進行說明。圖6⑷〜圖6(e)是說明 方式之半導體裝置製造方法的製程圖。圖7是表示 Ϊ施方式之半導體裝置製造方法得到的半導體裝置 概略的截面圖。 體梦^式的半導體裝置，與上述實施方式3的半導 體裝置相比較’不同點在於採用核材料作為間隔物。 接机Γ先與上述實施方式5相同，在切割膠帶33上層 13,。口隹膠# 12。接著，在黏合膠片12’上層積半導體晶圓 小、# 合膠片的半導體晶圓切割成預定的大 蘚此:丨t’從切割膠帶33上剥離帶有粘接劑的晶片。 曰 侍到/、備黏合膠片12的半導體元件13。 23 1362708 19387pifll 爲第95105603號中文說明書無劃線修正本 修正日期:1〇〇年12月19曰 在另一面，在切割膠帶33上形成黏合膠片41 (參照 圖6(a))’在此黏合膠片41上貼上核材料42(參照圖6(b)f 進而，將帶有黏合膠片的半導體晶圓切割成預定的大小、 成晶片狀（參照圖6(c))，從切割膠帶33上剝 劑的晶片。藉此，得到具備黏合膠片41，的== 42,。 接著，將上述半導體元件13以焊接面朝上藉由黏合 ，片U暫時固定於基板等n之上。進而，將核材料42, 藉由黏合膠片41，暫時固定於半導體元件13之上。進而， 在核材料42,之上藉由黏合膠片12將半導體元件13以焊 接面朝上暫時固定。 接著，不進行加熱製程而進行焊線製程。藉此 電極料與基㈣11上的内部連接用線之 間以烊線16電氣連接（參照圖7)。 程二藉由封裝樹脂封裝半導體元件的封裝製 ί門】=的同時，基板等11與半導體元件13 !二2 Γ3與核材料^之間藉由黏合膠片 方式之上㈣韻程，可得到本實施 化^程 此外，也可在封裝製程之後進行後固 聚酯’可列舉薄膜(例如聚酿亞胺薄膜、 碳酸醋f鮮）本—甲酸乙—醋薄膜、聚蔡乙®旨薄膜、聚 基I St:破=:瓣製不織纖输^ /日回、矽基板或玻璃基板等》 24 1362708 19387pifll 修正日期:100年丨2月19日 爲第95105603號中文說明書無劃線修正本 (實施方式7) 參照圖8(a)〜圖8(b)對本發明的實施方式7 裝置的製造方法進行㈣1 8⑻18(b)是說明 方式之半導體裝置製造方法的製程圖。 本實施方式的半導體裝置，與上述實施方式6的半導 體裝置相比較’糾點在於藉由頂㈣方法替代核材料的 切割實現晶片化。 …首先’與上述實施方式6同樣得到具備黏合膠片12 的半導體70件13。另外，在黏合膠片41上貼上核材料。 進而’頂出預疋大小成晶片狀’得到具備黏合膠片化的 晶片狀核材料。 接著’與上述實施方式6同樣，核材料42,及半導體 元件13依次層積並藉由黏合膠片12、41，而被暫時固定。 進而，進行焊線製程、封裝製程、因應必要的後固化 製程，可得到本實施方式之半導體裝置。 以上說明了本發明的最佳實施方式。然而，此等實施 方式並不限定本發明’在與本發明專觸求範财所記載 的技術思想實質上相同的範圍内可有多種變更。 亦即’上述基板等上3維裝配半導體元件時’也可以 在形成半導體元件電路的—面形成緩衝塗層。此緩衝塗層 可列舉例如由氮化矽膜或聚醯亞胺樹脂等耐熱樹脂所構 成。 ^此外，在3維裝配半導體元件時各階段所使用的黏合 膠片不一定是由同一組成所構成，可因應製造條件或用途 25 1362708 19387pifll 爲第95105603號中文說明書 修正日期:1〇〇年12月丨9曰 作適當變更。 可因：卜要ΐί::式積方法僅為示例， =行::製r在將半導體元件層積在基板等二 實施例 以下，示例詳細說明本發明適宜的實施例。但是 實施例中所記載的材料或配比等不受有限記載的限制，此 發，种請專利觀不受僅僅此等實施例之限制，此等不 過是說明示例而已。此外，各實施例中的“部”及“％，，沒 特別限制，皆為重量基準。 (實施例1) 100部丙烯酸甲酯-甲基丙騎g旨為主要成分的丙婦 酸酯系聚合物（根上工業（股）製，Paracron W_197CM)、 3部多官能異氰酸酯系交聯劑、23部環氧樹脂（曰本環氧 樹脂 Japan Epoxy Resins (股）製，Epcoatl0〇4 )、6 部盼樹 脂（三井化學（股）製、MirexXLX-LL)溶解於甲基乙基 _中’調製成濃度20%的粘接劑組合物溶液。 土 ^ 此粘接劑組合物溶液塗布於已經矽氧烷處理的聚對 ^ 甲酸乙二醋薄膜（厚度5〇μπι)作為剝離塾所構成的 26 1362708 19387pifll 修正日期:100年12月19曰 爲第95105603號中文說明書無劃線修正本 離型處理薄膜上。進而，藉由在120°C乾燥3分鐘，製作 厚度25μπι的本實施例1之黏合膠片。 (實施例2) 本實施例2中，除使用丙烯酸丁酯為主要成分的聚合 物（根上工業（股）製，Paracron SN-710)替代實施例1 中所使用的丙烯酸酯系聚合物之外，與上述實施例1同樣 製作本實施例2之黏合膠片（厚度25μπ〇。 (比較例1) 100部丙烯酸曱酯一甲基丙烯酸酯為主要成分的丙烯 酸酯系聚合物（根上工業（股）製，Paracron W-197CM)、 23部環氧樹脂（日本環氧樹脂japan Epoxy Resins (股） 製，Epcoatl004)、6部酚樹脂（三井化學（股）製、Mirex XLX-LL)溶解於甲基乙基酮中，調製成濃度2〇%的粘接 劑組合物溶液。 此枯接劑組合物溶液塗布於已經碎氧烧處理的聚對 苯二甲酸乙二酯薄膜（厚度50μιη)作為剝離塾所構成的 離型處理薄膜上。進而，藉由在12〇°C乾燥3分鐘，製作 的比較例1之黏合膠片（厚度25μπι)。 (比較例2) 比較例2中，除使用丙烯酸丁酯為主要成分的聚合物 (根上工業（股）製，Paracron SN-710)替代實施例1中 所使用的丙烯酸酯系聚合物之外，與上述比較例丨同樣製 作比較例2之黏合膠片（厚度25μη〇。 [儲存彈性模數測定] 27 1362708 19387pifll 修正日期:100年12月19曰 爲第95105603號中文說明書無劃線修正本 如下所述測定上述實施例及比較例中所製作的黏合 膠片的固化前儲存彈性模數。 測定裝置是使用動態黏彈性測定裝置（RSAn， Reometric Sdentific公司制）而測定。測定條件是將膠片切 成長lOmmx寬5顏’拉伸模式、一定頻率（1〇Hz)下以 i〇°c/分進行升溫、纟耽〜28G〇c下進行測定確定此黏 合膠片在80C〜250°C下的儲存彈性模數。 測定結果示於下述表1中。 [表1] 儲存平性模數 加熱板溫度fc) 80 100 125 150 175 200 225 250 實施例1 2.6 1.8 1.9 1.9 1.8 1.7 1.8 2.9 實施例2 2.4 1.6 1.7 1.6 1.6 1.7 1.7 2.0 比較例1 0.1 - - • 比較例2 0.2 - - - - - - - 、田如表1所示，實施例i及2之黏合膠片在任一加熱板 溫度下都表現l.OMPa以上的儲存彈性模數。另一方面， 比較例1及2之黏合膠片的剪斷黏接力為〇 2赂。此外， 比較例1及2的〜25(TC下的儲存彈性模數低於測定下 限(0.1 MPa)。 [焊線性能] 評價使用實施例及比較例的黏合膠片在使用半導體 元件與導線架、基板、半導體元件使的焊線性能。 首先，製作基板、導線架及半導體元件等各種試樣。 28 13627,08 19387pifll 修正日期:100年12月19曰 爲第95105603號中文說明書無劃線修正本 亦即’基板(UniMicron Technology Corporation 製，商 品面：FTBGA16 X16(2216-001A01))的情形，使用的是所 得到的黏合膠·片從隔離物剝離後切成6mm的試樣。另一 方面，切割条鍵紹的晶圓製作長6mmx寬6mmx厚ΙΟΟμιη 的晶片。此晶片黏接(die attach)於基板上製作試片。晶片 黏接(die attach)是在120。(：溫度下、施加荷重(0.25MPa)、 加熱1秒鐘的條件下，使用晶片焊接機(diebonder)((股） 新川製SPA-300)而進行。 此外，導線架（新光電氣股份有限公司製，商品名 CA-F313(MF202))的情形，使用黏合膠片從隔離物剝離後 切成7.5mm的試樣。另一方面，切割蒸鍍鋁的晶圓，製作 長7.5mmx寬7.5mmx厚1〇〇μιη的晶片。此晶片黏接於基板 上製作έ式片。晶片黏接在與基板相同的條件下進行。 此外，半導體元件的情形，使用黏合膠片從隔離物剝 離後切成6mm的試樣。在導線架（新光電氣股份有限公 司製，商品名CA-F313(MF2〇2))的晶片銲墊(diepad)上， 晶片黏接(die attach)評價用模型圖案所形成的評價用元件 (Phenix Semiconductor(股）製型號 NT-1 〇3 鈍化層 Si3NV厚500A )被切割成長5mmx寬5mmx厚l〇〇pm的晶 片。此評價用元件作為第1個半導體元件。接著，使用7 述黏合膠片切割成5mm的晶片，將由蒸鍍鋁晶圓切割成 長5mmx寬5mmx厚ΙΟΟμιη的晶片壓模於上述評價用元件 之上而製作試片。此試片作為第2個半導體元件。'此外， 各試樣分別製作20個試片。 29 19387pifll 修正日期:100年12月19日 爲第95105603號中文說明書無劃線修1；$; &quot;,其&quot;V各種賴藉峰音驗以焊接用金線（直 =5叫）料。每丨個試樣料接點數為⑽點。谭接條 件為超音波輸出時間1Gms、超音波輸出m、焊接（b〇nd) 街重980_、熱台温度設為崎、17代、2贼。此外， 使用UTC-300((股)新川製作為焊線裝置。此外，焊接成功 ^評價是以張力計評價拉力強度為5g以上視為成功。此 夕’阳片黏接後不進行試樣的加熱製程。此外，半導體元 件的情形’第2個半導體元件與導線架之間進行焊接。 此等結果示於下述表2中。 [表2] &quot; ---------- 成功率(％) 導線架
如表2所示，實施例1及2的黏合膠片在任-加熱板 溫度下成功率都為1GG%。另—方面，比較例i及2的黏 合膠片為0%。實關丨及2 _合膠片的成功率為1〇〇 % ’疋因為它們具有充分⑽存雜模數，故沒有發生晶 片的移動。 【圖式簡單說明】 30 Ι3627Ό8 19387pifll 修正日期:1〇〇年12月19日 爲第95105603號中文說明書無劃線修正本 圖1(a)〜圖1(c)是說明本發明實施方式1的半導體裝 置製造方法的製程圖。 圖2⑷〜圖2⑷是說明本發明實施方式2的半導體裝 置製造方法的製程圖。 圖3(a)〜圖3(g)是說明本發明實施方式3的半導體裝 置製造方法的製程圖。 圖4⑷〜圖4⑷是說明本發明實施方式4的半導體裝 置製造方法的製程圖。 圖5⑷〜圖5(e)是說明本發明實施方式5的半導體裝 置製造方法的製程圖。 圖6⑷〜圖6(c)是說明本發明實施方式6的半導體裝 置製造方法的製程圖。 圖7是表示利用本發明實施方式6的半導體裝置製造 方法所得到的半導體裝置概況的截面圖。 圖8(a)〜圖8(b)是說明本發明實施方式7的半導體裝 置製造方法的製程圖。 【主要元件符號說明】 11 :基板等 12、14 :黏合膠片 13 :半導體元件 15 :封裝樹脂 16 :焊線 21 :間隔物 31 1362708 修正日期:1〇〇年12月19日 19387pifll 爲第95105603號中文說明書無劃線修正本 31 :黏合膠片 32 :半導體元件 33 :切割膠帶 32

Claims (1)

  1. Ι3627Ώ8 19387pifll 修正日期:1〇〇年12月19日 爲第95105603號中文說明書無劃線 十、申請專利範固： 1.一種半導體裝置的製造方法，包括： 程’將半導體元件藉轉合膠#暫時固定 於黏者物上；以及 焊H不㉘過加熱製程、在接合溫度⑽。C〜25代 ===:固:前的儲存彈性_ 献—圍為 * 1MPa以上、或在此溫 二溫度為1Mpa或1Mp™膠片作 、本Ht:專巧範圍第1項所述之半導體裝置的製造方 '’八 述黏著物是基板、導線架或半導體元件。 的製1項或第2項所述之半導體裝置 封裝製程由封裝樹脂封裝上述半導體元件；以及 # H化t轾’後固化上述封裝樹脂’其中上述封裝製 :及固化t程中，在經由加熱而固化封裝樹脂的同 時、將半導2元件II由上雜麵4固定於黏著物。 4.如申4專利範圍第1項所述之半導體裝置的製造方 法’其中使用含有熱塑性樹脂的黏合膠片作為上述黏合膠 、5·如巾4專利範圍第1項所述之半導難置的製造方 法’其中使用含有熱固性樹脂與熱塑性樹脂雙方的黏合膠 片作為上述黏合膠片。 6.如申哨專利範圍第4項所述之半導體裝置的製造方 33 1362708 19387pifll 修正日期:100年12月19曰 爲第95105603號中文說明書無劃線修正本 法’其中使用丙烯酸樹脂作為上述熱塑性樹脂。 7.如申請專利範圍第5項所述之半導體裝置的製造方 法’其中使用環氧樹脂及/或酚樹脂作為上述熱固化樹脂。 8·如申請專利範圍第4項所述之半導體裝置的製造方 法’其中使用添加有交聯劑的黏合膠片作為上述黏合夥片。 9.一種用於製造半導體裝置的黏合膠片，其特徵在於 固化前的儲存彈性模數在8〇。(：~25〇它溫度範圍内為11^1^ 或IMPa以上、或在此溫度範圍内的任一溫度為iMpa或 IMPa以上。 10.如申凊專利範圍第9項所述之用於製造半導體裝 置的黏合膠片，其中包括熱塑性樹脂。 置的專利範圍第9項所述之用於製造半導體裝 ^ ，其中包括熱固性樹脂與熱塑性樹脂雙方。 半導體= 第11項所狀餘製造 13如&gt;片八中熱塑性樹脂是丙烯酸樹脂。 罢的私人棚申5月專利範圍第11項所述之用於製造半導體裝 ^是軸^或_脂。 置的黏私料妓半導體裝 第1項至f 置’其特徵在於藉由如帽專利範圍 得到。 項所述之半導體裝置的製造方法所 34
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KR101009090B1 (ko) 2011-01-18
JP2011181960A (ja) 2011-09-15
EP1858069A1 (en) 2007-11-21
TW200633086A (en) 2006-09-16
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CN101103448A (zh) 2008-01-09
CN100472741C (zh) 2009-03-25

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