TWI349678B - Lactone-containing compound, polymer, resist composition, and patterning process - Google Patents
Lactone-containing compound, polymer, resist composition, and patterning processInfo
- Publication number
- TWI349678B TWI349678B TW096100547A TW96100547A TWI349678B TW I349678 B TWI349678 B TW I349678B TW 096100547 A TW096100547 A TW 096100547A TW 96100547 A TW96100547 A TW 96100547A TW I349678 B TWI349678 B TW I349678B
- Authority
- TW
- Taiwan
- Prior art keywords
- lactone
- polymer
- containing compound
- resist composition
- patterning process
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D307/00—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D307/00—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
- C07D307/94—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom spiro-condensed with carbocyclic rings or ring systems, e.g. griseofulvins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/22—Esters containing halogen
- C08F220/24—Esters containing halogen containing perhaloalkyl radicals
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/108—Polyolefin or halogen containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Furan Compounds (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006001102A JP4539865B2 (ja) | 2006-01-06 | 2006-01-06 | ラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200801049A TW200801049A (en) | 2008-01-01 |
TWI349678B true TWI349678B (en) | 2011-10-01 |
Family
ID=38233101
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096100547A TWI349678B (en) | 2006-01-06 | 2007-01-05 | Lactone-containing compound, polymer, resist composition, and patterning process |
Country Status (4)
Country | Link |
---|---|
US (1) | US7678530B2 (zh) |
JP (1) | JP4539865B2 (zh) |
KR (1) | KR101148553B1 (zh) |
TW (1) | TWI349678B (zh) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4687878B2 (ja) * | 2005-05-27 | 2011-05-25 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
JP4288518B2 (ja) * | 2006-07-28 | 2009-07-01 | 信越化学工業株式会社 | ラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法 |
KR101116963B1 (ko) * | 2006-10-04 | 2012-03-14 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 고분자 화합물, 레지스트 재료, 및 패턴 형성 방법 |
JP5398248B2 (ja) | 2008-02-06 | 2014-01-29 | 東京応化工業株式会社 | 液浸露光用レジスト組成物およびそれを用いたレジストパターン形成方法 |
JP5177432B2 (ja) * | 2008-02-21 | 2013-04-03 | 信越化学工業株式会社 | パターン形成方法 |
JP4678413B2 (ja) * | 2008-03-13 | 2011-04-27 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP4678419B2 (ja) | 2008-05-02 | 2011-04-27 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP5401126B2 (ja) | 2008-06-11 | 2014-01-29 | 東京応化工業株式会社 | 液浸露光用レジスト組成物およびそれを用いたレジストパターン形成方法 |
JP5314944B2 (ja) * | 2008-06-20 | 2013-10-16 | 富士フイルム株式会社 | 液浸露光用レジスト組成物及びそれを用いたパターン形成方法 |
JP5172494B2 (ja) | 2008-06-23 | 2013-03-27 | 東京応化工業株式会社 | 液浸露光用レジスト組成物、レジストパターン形成方法、含フッ素高分子化合物 |
JP5172505B2 (ja) | 2008-07-07 | 2013-03-27 | 東京応化工業株式会社 | ネガ型レジスト組成物およびそれを用いたレジストパターン形成方法 |
JP5629454B2 (ja) * | 2008-12-12 | 2014-11-19 | 富士フイルム株式会社 | 重合性化合物、ラクトン含有化合物、ラクトン含有化合物の製造方法、及び、該重合性化合物を重合させた高分子化合物 |
JP5530712B2 (ja) * | 2008-12-12 | 2014-06-25 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物及び該組成物を用いたパターン形成方法 |
US8771916B2 (en) | 2008-12-12 | 2014-07-08 | Fujifilm Corporation | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same |
WO2010067898A2 (en) | 2008-12-12 | 2010-06-17 | Fujifilm Corporation | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the composition |
JP5292133B2 (ja) * | 2009-03-09 | 2013-09-18 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターン形成方法 |
JP5568354B2 (ja) | 2009-03-31 | 2014-08-06 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物及びそれを用いたパターン形成方法 |
JP5177434B2 (ja) | 2009-04-08 | 2013-04-03 | 信越化学工業株式会社 | パターン形成方法 |
JP5346660B2 (ja) * | 2009-04-15 | 2013-11-20 | 富士フイルム株式会社 | 感活性光線または感放射線樹脂組成物、及び該組成物を用いたパターン形成方法 |
JP5568258B2 (ja) * | 2009-07-03 | 2014-08-06 | 東京応化工業株式会社 | ポジ型レジスト組成物およびそれを用いたレジストパターン形成方法、並びに含フッ素高分子化合物 |
JP5396189B2 (ja) * | 2009-07-31 | 2014-01-22 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、及びそれを用いたパターン形成方法 |
KR20110020058A (ko) * | 2009-08-21 | 2011-03-02 | 제일모직주식회사 | (메트)아크릴레이트 화합물, 감광성 폴리머, 및 레지스트 조성물 |
JP5771379B2 (ja) | 2009-10-15 | 2015-08-26 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物及び該組成物を用いたパターン形成方法 |
JP5470053B2 (ja) * | 2010-01-05 | 2014-04-16 | 東京応化工業株式会社 | ポジ型レジスト組成物、レジストパターン形成方法 |
JP5216032B2 (ja) | 2010-02-02 | 2013-06-19 | 信越化学工業株式会社 | 新規スルホニウム塩、高分子化合物、高分子化合物の製造方法、レジスト材料及びパターン形成方法 |
US20120076996A1 (en) * | 2010-09-28 | 2012-03-29 | Fujifilm Corporation | Resist composition, resist film therefrom and method of forming pattern therewith |
JP5514687B2 (ja) | 2010-09-29 | 2014-06-04 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物、感活性光線性または感放射線性膜およびパターン形成方法 |
JP5491450B2 (ja) | 2011-05-30 | 2014-05-14 | 信越化学工業株式会社 | 高分子化合物、化学増幅レジスト材料、該化学増幅レジスト材料を用いたパターン形成方法。 |
JP5411893B2 (ja) | 2011-05-30 | 2014-02-12 | 信越化学工業株式会社 | スルホニウム塩、高分子化合物、該高分子化合物を用いた化学増幅型レジスト組成物及びレジストパターン形成方法 |
JP5659119B2 (ja) | 2011-09-22 | 2015-01-28 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、並びに、これを用いたレジスト膜、パターン形成方法、電子デバイスの製造方法、及び、電子デバイス |
JP5617810B2 (ja) | 2011-10-04 | 2014-11-05 | 信越化学工業株式会社 | レジスト保護膜材料及びパターン形成方法 |
JP6181945B2 (ja) * | 2012-11-27 | 2017-08-16 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法 |
JP6190595B2 (ja) | 2012-11-27 | 2017-08-30 | 東京応化工業株式会社 | レジストパターン形成方法 |
JP6380399B2 (ja) * | 2013-09-12 | 2018-08-29 | Jsr株式会社 | 樹脂組成物、レジストパターン形成方法及び重合体 |
JP6090585B2 (ja) | 2013-12-18 | 2017-03-08 | 信越化学工業株式会社 | スルホニウム塩、レジスト組成物及びレジストパターン形成方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2906999B2 (ja) | 1994-04-26 | 1999-06-21 | 信越化学工業株式会社 | レジスト材料 |
JP3830183B2 (ja) | 1995-09-29 | 2006-10-04 | 東京応化工業株式会社 | オキシムスルホネート化合物及びレジスト用酸発生剤 |
JP3587413B2 (ja) | 1995-12-20 | 2004-11-10 | 東京応化工業株式会社 | 化学増幅型レジスト組成物及びそれに用いる酸発生剤 |
JP3798458B2 (ja) | 1996-02-02 | 2006-07-19 | 東京応化工業株式会社 | オキシムスルホネート化合物及びレジスト用酸発生剤 |
JP3879139B2 (ja) | 1996-05-08 | 2007-02-07 | 住友化学株式会社 | グリオキシム系エステル、その製法および用途 |
TW550439B (en) | 1997-07-01 | 2003-09-01 | Ciba Sc Holding Ag | New oxime sulfonates as latent acids and compositions and photoresists comprising said oxime sulfonates |
JP2000336121A (ja) | 1998-11-02 | 2000-12-05 | Shin Etsu Chem Co Ltd | 新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法 |
KR100441734B1 (ko) | 1998-11-02 | 2004-08-04 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 신규한 에스테르 화합물, 고분자 화합물, 레지스트 재료및 패턴 형성 방법 |
SG78412A1 (en) | 1999-03-31 | 2001-02-20 | Ciba Sc Holding Ag | Oxime derivatives and the use thereof as latent acids |
JP4013044B2 (ja) | 2001-06-15 | 2007-11-28 | 信越化学工業株式会社 | レジスト材料、及びパターン形成方法 |
US6830866B2 (en) | 2001-06-15 | 2004-12-14 | Shi-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
JP2003040894A (ja) * | 2001-07-24 | 2003-02-13 | Kuraray Co Ltd | (メタ)アクリル酸5−オキソ−4,8−ジオキサトリシクロ[4.2.1.03,7]ノナン−2−イルの製造方法 |
US6916591B2 (en) | 2002-03-22 | 2005-07-12 | Shin-Etsu Chemical Co., Ltd. | Photoacid generators, chemically amplified resist compositions, and patterning process |
WO2004074242A2 (en) | 2003-02-19 | 2004-09-02 | Ciba Specialty Chemicals Holding Inc. | Halogenated oxime derivatives and the use thereof as latent acids |
TWI366067B (en) * | 2003-09-10 | 2012-06-11 | Fujifilm Corp | Photosensitive composition and pattern forming method using the same |
JP2005099456A (ja) * | 2003-09-25 | 2005-04-14 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP4424500B2 (ja) * | 2004-04-09 | 2010-03-03 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
JP4579019B2 (ja) * | 2005-03-17 | 2010-11-10 | 富士フイルム株式会社 | ポジ型レジスト組成物及び該レジスト組成物を用いたパターン形成方法 |
-
2006
- 2006-01-06 JP JP2006001102A patent/JP4539865B2/ja active Active
-
2007
- 2007-01-04 US US11/649,251 patent/US7678530B2/en active Active
- 2007-01-05 KR KR1020070001259A patent/KR101148553B1/ko active IP Right Grant
- 2007-01-05 TW TW096100547A patent/TWI349678B/zh active
Also Published As
Publication number | Publication date |
---|---|
US20070160929A1 (en) | 2007-07-12 |
TW200801049A (en) | 2008-01-01 |
JP2007182488A (ja) | 2007-07-19 |
JP4539865B2 (ja) | 2010-09-08 |
KR20070074476A (ko) | 2007-07-12 |
US7678530B2 (en) | 2010-03-16 |
KR101148553B1 (ko) | 2012-05-25 |
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